JP4019067B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP4019067B2 JP4019067B2 JP2004136312A JP2004136312A JP4019067B2 JP 4019067 B2 JP4019067 B2 JP 4019067B2 JP 2004136312 A JP2004136312 A JP 2004136312A JP 2004136312 A JP2004136312 A JP 2004136312A JP 4019067 B2 JP4019067 B2 JP 4019067B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Description
この半導体発光装置の発光色は、半導体発光素子(5)の固有の発光波長によって決定され、例えば、GaAlP系、GaP系及びGaN系の半導体発光素子を半導体発光素子(5)に使用すれば発光色は、それぞれ赤色、緑色及び青色となる。また、GaAs系の半導体発光素子を使用すれば赤外発光の半導体発光装置が得られる。
そこで、本発明では、高輝度で所望の発光色が得られる半導体発光装置を提供することを目的とする。
図1に示すように、本実施の形態による半導体発光装置は、レンズ形の樹脂封止体(7)を備えたLED(半導体発光ダイオード)(8)と、樹脂封止体(7)を包囲する蛍光カバー(9)とを備えている。周知のトランスファモールド法又はキャスティング法によって形成される樹脂封止体(7)は、円柱状の封止部(7a)と、封止部(7a)の一端側にこれと一体に形成されたほぼ半球状のレンズ部(7b)とを有する。樹脂封止体(7)は光透過性を有する例えばエポキシ系樹脂等を主成分とし、これにシリカ等から成る散乱剤が混入され、若干の非発光物質の顔料が添加される場合もある。図2に示すLED(8)は、図5に示す従来の半導体発光装置と基本的に同一の構造を備えているが、樹脂封止体(7)には蛍光体は添加されない。図2に示すLED(8)の半導体発光素子(5)には、430〜480nm付近に発光ピークを有する青色系発光色を生ずるGaN系の半導体発光素子が使用される。蛍光カバー(9)は、例えば樹脂基材中に半導体発光素子(5)の発光によって励起されて蛍光を発する蛍光体が添加されている。樹脂基材は透光性のポリエステル樹脂、アクリル樹脂、ウレタン、ナイロン、シリコーン樹脂、塩化ビニル、ポリスチロール、ベークライト、CR39(アクリル・グリコール・カーボネート樹脂)等から選択される。ウレタン、ナイロン、シリコーン樹脂は蛍光カバー(9)にある程度の弾力性を付与するため、樹脂封止体(7)への装着が容易である。蛍光体は、光線が照射されたときに、その光線を吸収しながら、その光線の波長とは異なる波長の可視光線を発射する物質をいう。一般に蛍光体は、基体、付活体及び融剤よりなる。基体には、亜鉛、カドミウム、マグネシウム、シリコン、イットリウム等の稀土類元素等の酸化物、硫化物、珪酸塩、バナジン酸塩等が適し、銅、鉄、ニッケルのそれ等は不適である。付活体は銀、銅、マンガン、クロム、ユウロビウム、亜鉛、アルミニウム、鉛、リン、砒素、金等で一般に0.001%〜数%程度の微量が用いられる。融剤は普通塩化ナトリウム、塩化カリウム、炭酸マグネシウム、塩化バリウムが使用される。前記無機蛍光体の外、フルオレセイン、エオシン、油類(鉱物油)等の有機蛍光体を使用できる。
<1> 半導体発光素子(5)から生ずる光と蛍光体によって波長変換された光とを混合して所望の発光色が高輝度で得られる。
<2> 複数種の蛍光体を蛍光カバー(9)に混合することにより所望の混合色又は中間色の光を取り出すことができる。
<3> 蛍光体は蛍光カバー(9)に添加され、樹脂封止体(7)中には添加されないので、樹脂封止体(7)内では蛍光体による光散乱が生じない。
<4> また、十分に肉薄なフィルム状の蛍光カバー(9)内では蛍光体による光散乱は比較的小さい。このため、ヘッダ(1)及び樹脂封止体(7)のレンズ部(7b)の形状等によって所望の光指向性が得られ、波長変換に伴う輝度の低下を最小限に抑制することができる。
<5> 蛍光カバー(9)によって市販の半導体発光素子(5)から生ずる光とは異なる波長の光を取り出すことができる。
<6> 蛍光カバー(9)を容易に交換して異なる波長の光を取り出すことができる。
<7> 蛍光カバー(9)が樹脂封止体(7)に密着して装着されるので、装着後に振動等の外力が蛍光カバー(9)に加えられても蛍光カバー(9)は樹脂封止体(7)から容易には離脱しない。
<8> 市販の半導体発光素子(5)に蛍光カバー(9)を被着できるので、半導体発光装置を安価に製造することができる。
Claims (1)
- 複数のリードと、該複数のリード間に電気的に接続された半導体発光素子と、前記複数のリードの一端及び前記半導体発光素子を封止する樹脂封止体とを備えた半導体発光装置において、
前記樹脂封止体と同一の形状の内面と透光性及び弾力性とを有する蛍光カバーを前記樹脂封止体に密着して前記樹脂封止体に交換可能に被着し、
前記蛍光カバーに対向してライトガイドを配置して、前記樹脂封止体と前記ライトガイドとの間に前記蛍光カバーを配置し、
前記半導体発光素子から照射した光により前記蛍光カバー内に配合された蛍光体を励起し、前記半導体発光素子から生ずる光とは異なる波長の光を前記蛍光カバーの外部に取り出し、
前記半導体発光素子から照射され且つ前記蛍光カバー内で波長変換された光を、前記ライトガイドの一端から前記ライトガイド内に受光して、前記ライトガイドの他端又は一方の主面から前記波長変換された光を照射することを特徴とする半導体発光装置。
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JP2004136312A JP4019067B2 (ja) | 2004-04-30 | 2004-04-30 | 半導体発光装置 |
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JP20436599A Division JP3564330B2 (ja) | 1999-07-19 | 1999-07-19 | 半導体発光装置 |
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JP4019067B2 true JP4019067B2 (ja) | 2007-12-05 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US7102152B2 (en) * | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
DE102005039319A1 (de) * | 2005-08-19 | 2007-02-22 | Giesecke & Devrient Gmbh | Kartenförmiger Datenträger |
US20090034230A1 (en) | 2007-07-31 | 2009-02-05 | Luminus Devices, Inc. | Illumination assembly including wavelength converting material having spatially varying density |
US8585273B2 (en) * | 2007-07-31 | 2013-11-19 | Rambus Delaware Llc | Illumination assembly including wavelength converting material |
KR101308947B1 (ko) * | 2012-05-11 | 2013-09-24 | (주)켐리치 | 근거리 무선통신을 이용한 스티커형 발광 장치 |
KR20140064393A (ko) * | 2012-11-20 | 2014-05-28 | 서울반도체 주식회사 | 백라이트 유닛 |
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JPS5079379U (ja) * | 1973-11-24 | 1975-07-09 | ||
JPS5330783U (ja) * | 1976-08-24 | 1978-03-16 | ||
JPH06103751B2 (ja) * | 1988-05-18 | 1994-12-14 | 三洋電機株式会社 | 炭化ケイ素発光ダイオード装置及び炭化ケイ素単結晶の製造方法 |
JPH03119921U (ja) * | 1990-03-23 | 1991-12-10 | ||
JP2578529Y2 (ja) * | 1991-10-25 | 1998-08-13 | サンケン電気株式会社 | バック照明装置 |
JPH06104491A (ja) * | 1992-09-17 | 1994-04-15 | Rohm Co Ltd | 発光ダイオードランプ |
JP2606025Y2 (ja) * | 1993-12-24 | 2000-09-11 | 日亜化学工業株式会社 | 発光ダイオード素子 |
JP3116727B2 (ja) * | 1994-06-17 | 2000-12-11 | 日亜化学工業株式会社 | 面状光源 |
JP3491016B2 (ja) * | 1999-07-19 | 2004-01-26 | サンケン電気株式会社 | 半導体発光装置 |
JP3564330B2 (ja) * | 1999-07-19 | 2004-09-08 | サンケン電気株式会社 | 半導体発光装置 |
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