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JP3980896B2 - Processing method and apparatus for plate material - Google Patents

Processing method and apparatus for plate material Download PDF

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Publication number
JP3980896B2
JP3980896B2 JP2002022588A JP2002022588A JP3980896B2 JP 3980896 B2 JP3980896 B2 JP 3980896B2 JP 2002022588 A JP2002022588 A JP 2002022588A JP 2002022588 A JP2002022588 A JP 2002022588A JP 3980896 B2 JP3980896 B2 JP 3980896B2
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JP
Japan
Prior art keywords
plate material
grindstone
chamfering
grinding
plate
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JP2002022588A
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Japanese (ja)
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JP2003225847A (en
Inventor
裕之 竹部
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Nakamura Tome Precision Industry Co Ltd
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Nakamura Tome Precision Industry Co Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、板材の加工方法及びその装置に関し、特に液晶基板、セラミックス基板、ガラス板等の端面のC面取り加工後に連続的にR面取り加工、外周端面加工(外形寸法調整)、板材のコーナー部加工等の後処理を行うのに効果的な技術に係る。
【0002】
【従来の技術】
例えば、液晶基板は、所定の大きさにスクライブ及びブレークされて各種液晶パネルとして利用されている。
この際に、液晶基板の端面がエッジ状のままになっていると、このエッジ部を起点にして欠けや割れ不良が発生する恐れが高いことから、上記液晶基板の周縁部の稜角部を面取り加工するのが一般的である。
また、面取り加工方法もガラスが欠けやすく、バリやチッピングが発生しやすいことから図6に示すように、まず、表裏2面の稜角部をC面取り加工し、さらにこの端面をR面取り加工することが広く採用されている。
さらには、図7に示すように液晶基板の外形寸法を調整する目的で、外周端面加工(外形整形)を施したり、図8に示すように方形基板のコーナー部を研削するコーナー加工等もされている。
【0003】
ここで、C面取り加工とR面取り加工、外周端面加工、コーナー加工等では、砥石の回転方向や回転速度及び板材と砥石の相互の移動速度等がそれぞれ異なることから、まず、C面取り専用の加工装置に、液晶基板等の板材を装着固定してC面取り加工を施し、その後にR面取り、外周端面加工、コーナー加工等の専用加工装置に搬送載置して加工(以下、板材の端部加工という)をしていた。
【0004】
しかし、上記のような従来方法では、C面取り加工装置と板材の端部加工装置の2台が必要となるばかりか、この2台の加工装置間に被加工材たる板材の搬送装置も必要となることになる。
すると、この搬送装置により、板材を加工装置にセッティングする際にセッティング(設置精度)のバラツキにより、その後の加工精度や加工量にバラツキが発生する問題があった。
また、加工装置の全長が長くなり、その間に投入される半完製品が多くなり、生産タクトも長くなるという技術的課題が内在していた。
【0005】
【発明が解決しようとする課題】
本発明は、上記従来技術に内在する技術的課題に鑑みて、板材のC面取り及びR面取り加工等の板材の端部加工を一台の加工装置にて連続的に行うことが出来、コンパクトで生産性が高く、加工品質の安定性に優れた板材の加工装置及びそれを用いた加工方法の提供を目的とする。
【0006】
【課題を解決するための手段】
請求項1記載の発明に係る板材の加工装置は、板材の移動方向に沿った側部の表裏2面の稜角部に対して、表面から端面方向に回転するマルチ砥石と、これとは逆に裏面から端面方向に回転するマルチ砥石とを上下一対備え、上部のマルチ砥石を構成する複数の砥石単板と下部のマルチ砥石を構成する複数の砥石単板が相互にかみ込み且つ、その砥石刃先が前記板材の表裏2面の稜角部に摺接し、C面取り加工するように配置してあり、マルチ砥石の回転軸は板材が移動するにつれてC面取り量が増大する方向にわずかに傾斜していて、当該C面取り加工の後に、加工接触点において板材の移動方向とは反対方向に回転し回転軸が板材の移動方向とは直角方向に配置した砥石をその砥石刃先が板材の端部を研削するように配置してあり、且つC面取り加工する上下一対のマルチ砥石と板材の端部を研削する砥石との間隔が面取り加工される板材の稜辺長さより狭いことを特徴とする。
【0007】
請求項2記載の発明に係る板材の加工方法は、板材の移動方向に沿った側部の表裏2面の稜角部に対して、表面から端面方向に回転するマルチ砥石と、これとは逆に裏面から端面方向に回転するマルチ砥石とを、上部のマルチ砥石を構成する複数の砥石単板と下部のマルチ砥石を構成する複数の砥石単板が相互にかみ込み、マルチ砥石の回転軸は板材が移動するにつれてC面取り量が増大する方向にわずかに傾斜していて、その一対のマルチ砥石刃先を、前記板材の表裏2面の稜角部に摺接させてC面取り加工を施し、当該C面取り加工の後に、前記上下一対のマルチ砥石との間隔が面取り加工される板材の稜辺長さより狭く、且つ加工接触点において板材の移動方向とは反対方向に回転し回転軸が板材の移動方向とは直角方向に配置した砥石を用いて板材の端部を研削することを特徴とする。
【0008】
発明をより効果的なものにするためにC面取り加工手段の砥石刃先と、これに並設した板材の端部加工手段の砥石刃先との間隔が、面取り加工される板材の稜辺長さより狭くなるように設定するとよい
【0009】
ここで、「砥石刃先が板材の表裏2面の稜角部に摺接するように」とは、被加工材たる板材を移動させてもよく、板材を固定して面取り手段を移動させてもよく、あるいは、相互とも移動させてもよいことを意味する。
なお、ワークのセンタリング精度や駆動装置のコンパクト化を考慮するとワークたる板材を移動させるのが好ましい。
また、板材の端部を研削するとは、板材の端面をそれぞれ上下方向からC面取りした後の端面部のC面取りコーナー部に凹部R形状からなる砥石を摺接させてR面取りする場合のみならず、C面取り後の板材の端面外形(C面取りされなかった端面部)にも接するように研削する場合、あるいは、図7に示したように外周端部加工する場合、図8に示すように板材のコーナー部を加工する場合等を含めて、砥石刃先を加工接触点において板材の移動方向と反対方向に回転し、研削加工する方法及びその回転制御手段をいう。
【0010】
C面取り用の砥石の刃先と、R面取り等の板材の端部加工の砥石の刃先との間隔を板材の稜辺の長さより狭く設定した場合には、板材のC面取り加工完了前に、R面取り加工等が開始されることになる。
この場合に、R面取り用等の砥石の刃先に、ワークが喰い付きやすいように板材の移動速度を初期には相対的に遅く設定し、R面取り等開始後は、上記移動速度を速くするように設定するのが好ましい。
【0011】
【発明の実施の形態】
本発明の望ましい実施の形態を以下、図面に基づいて説明する。
図1に本発明に係る板材加工装置1の要部模式図を示す。
板材加工装置1には、そのテーブル2に被研削材たる液晶基板7等の板材をセットする載置固定装置3が備えられ、テーブルY軸上を移動する。
また、液晶基板の表裏2面の稜角部に接するように、上部側C面取り砥石4及び下部側C面取り砥石5が上下方向のZ軸方向及びワークへの喰い込み方向のX軸方向に位置調整可能に取り付けられている。
液晶基板の面取り加工する稜辺の移動線上に沿って、C面取り用の一対の砥石4、5の後方に並設してR面取り用砥石6が備えられている。
このR面取り用砥石6も、Z軸方向及びX軸方向に位置調整可能になっている。
なお、C面取り用砥石4、5及びR面取り用砥石6は、回転軸が軸支され、ベルト等を介して各種駆動手段にて回転可能になっているが、分かりやすくするために図1においてはそれらの記載を省略してある。
図1は、液晶基板の片側の稜辺に沿って、C面取り用砥石及びR面取り用砥石を並設した例を示したが、図2に示したように液晶基板の他方の稜辺に沿っても、C面取り用及びR面取り用砥石をそれぞれ門構え状に備えることにより、一度に液晶基板の両サイドの面取り加工を行うことができる。
【0012】
次に、C面取り用の砥石の構造について説明する。
図3に、液晶基板7と砥石の当たり面を模式的に示す。
上部の砥石4は、液晶基板7の表面7aから端面7cの方向に向かって回転W1している。
一方、下部の砥石5は、液晶基板の裏面7bから端面7cの方向に向かって回転W2している。
図4に、C面取り用砥石4を上部から見た状態を示し、例えば、砥石4は砥石単板41、42、43の三枚を重ねたマルチ砥石になっている。
なお、砥石単板の枚数は、被削材の厚みや面取り量に応じて任意に設定される。
液晶基板7を下から上方向に移動させる。
これに対して、三枚のマルチ砥石がその回転軸に対して、極くわずかに角度をつけて、この液晶基板の稜角部に摺接するように配置されている。
第1の砥石41にて研削代81が研削され、第2の砥石42にて研削代82の部分が研削され、第3の砥石43にて研削代83の部分が研削され、所定のC面取りが得られるようになっている。
マルチ砥石の傾斜角は、砥石の間隔及びC面取り量により選定されるが、0.1〜0.2mmのC面取りの場合には、両端の砥石間の変位量0.1mm程度になる。
また、下部側の砥石5も三枚の砥石単板からなるマルチ砥石になっていて、上部側の砥石4と相互に砥石がかみ込むように配置されていて、液晶基板を上下方向から挟持するように研削することにより、液晶基板の砥石に対する逃げ振れを防止している。
【0013】
C面取りされた液晶基板は、次にR面取り用砥石6にて研削される。
その拡大模式図を図5に示す。
R面取り用砥石6は、液晶基板の移動方向と反対方向に回転していて、液晶基板の端面部を所定のR形状に研削するように凹部R形状刃先6aを有している。
また、図1に示すようにC面取り用砥石とR面取り用砥石の間隔L1が、液晶基板の長さL2よりも狭く(短く)設定されているので、液晶基板7はC面取りされながらR面取り加工も進行する。
この場合に、R面取り開始までは、液晶基板の移動速度を遅く設定する。
なお、図4に示した砥石6には、一本のR溝のみ示してあるが、例えば、6〜9本と複数の溝形状を設けておいて板材の厚みやR面取り形状に応じて選定使用するのが良い。
このような工程を経て、図5に示すように液晶基板の稜角部がC面取り(C1、C2)及びR面取り加工(R1、R2)される。
また、R面取り用砥石6の代わりに、図7に示すように外形整形用砥石61を用いてもよく、図8に示すようにコーナー加工用砥石にてコーナー部を研削してもよい。
【0014】
【発明の効果】
本発明によれば、C面取り用砥石とR面取り等の端部加工用砥石を並設し、1台の加工装置にて連続的に板材のC面取りと板材の端部加工が可能になり、従来、C面取り用と端部加工用の2台の加工装置が必要であったのに比較して、加工装置がコンパクトになり、上記工程間の搬送装置が不要になり、搬送による材料設置バラツキも無くなり、加工精度の安定化が望める。
また、それにより加工ラインの全長が飛躍的に短くなり、ラインタクトも短くなる。
さらには、工程内の半完成品の量も少なくすることができる。
C面取り用砥石とR面取り用砥石、あるいは、外形整形用砥石との間隔を被削材たる板材の長さより狭く設定すると、C面取りとR面取りあるいは、外形整形加工が連続的同時並行的に同期化することができ、より加工装置をコンパクトにできる。
【図面の簡単な説明】
【図1】本発明に係る面取り加工装置1の要部構成図を示す。
【図2】面取り加工手段を板材の両サイドに設けた例を示す。
【図3】板材を上下方向からC面取りする状態を示す。
【図4】C面取り用砥石の構成を示す。
【図5】R面取りする状態を示す。
【図6】液晶基板等の面取り状態を示す。
【図7】外形整形加工の状態を示す。
【図8】板材のコーナー加工例を示す。
【符号の説明】
1 本発明に係る板材加工装置
2 テーブル
3 ワーク載置固定装置
4 C面取り用砥石(上部側)
5 C面取り用砥石(下部側)
6 R面取り用砥石
6a R面取り用砥石の凹部R形状部
61 板材の端面加工用砥石
7 板材(液晶基板)
7a 板材の表面
7b 板材の裏面
7c 板材の端面
81、82、83 研削代
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing method and apparatus for a plate material, and in particular, after chamfering processing of an end surface of a liquid crystal substrate, a ceramic substrate, a glass plate, etc., continuously R chamfering processing, outer peripheral end surface processing (external dimension adjustment), corner portion of the plate material The present invention relates to a technique effective for post-processing such as processing.
[0002]
[Prior art]
For example, a liquid crystal substrate is scribed and broken to a predetermined size and used as various liquid crystal panels.
At this time, if the end surface of the liquid crystal substrate is left in an edge shape, there is a high risk of occurrence of chipping or cracking starting from the edge portion. Therefore, the edge portion of the peripheral edge of the liquid crystal substrate is chamfered. It is common to process.
Also, the chamfering method is easy to chip glass, and burrs and chipping are likely to occur. First, as shown in FIG. Is widely adopted.
Further, for the purpose of adjusting the outer dimensions of the liquid crystal substrate as shown in FIG. 7, outer peripheral end face processing (outer shape shaping) is performed, or corner processing for grinding the corner portion of the rectangular substrate as shown in FIG. ing.
[0003]
Here, in the chamfering process, the R chamfering process, the outer peripheral end surface process, the corner process, etc., since the rotation direction and rotation speed of the grindstone and the moving speed of the plate and the grindstone are different from each other, first, a process dedicated to C chamfering. A plate material such as a liquid crystal substrate is mounted and fixed on the device, and C chamfering is performed, and then it is transported and placed on a dedicated processing device such as R chamfering, outer peripheral edge processing, corner processing, etc. (hereinafter referred to as edge processing of the plate material) ).
[0004]
However, in the conventional method as described above, not only two C-chamfering processing devices and plate material end processing devices are required, but also a plate material conveying device that is a workpiece is required between the two processing devices. Will be.
As a result, there is a problem that the processing accuracy and the processing amount vary due to variations in setting (installation accuracy) when the plate material is set in the processing device.
Moreover, the technical problem that the full length of a processing apparatus becomes long, the semi-finished product thrown in in the meantime, and a production tact also become long was inherent.
[0005]
[Problems to be solved by the invention]
In view of the technical problems inherent in the above-described conventional technology, the present invention can continuously perform edge processing of a plate material such as C chamfering and R chamfering processing of a plate material with a single processing apparatus, and is compact. An object is to provide a plate material processing apparatus having high productivity and excellent processing quality stability, and a processing method using the same.
[0006]
[Means for Solving the Problems]
The processing apparatus for a plate material according to the invention of claim 1 is a multi-grinding wheel that rotates from the surface to the end surface direction with respect to the ridge corner portions of the front and back surfaces of the side portion along the moving direction of the plate material. A pair of upper and lower multi-grinding stones rotating in the direction from the back surface to the end face, and a plurality of grinding stone single plates constituting the upper multi-grinding stone and a plurality of grinding stone single plates constituting the lower multi-grinding stone engage with each other and the grindstone cutting edge Are arranged so as to be in slidable contact with the ridge corners of the two front and back surfaces of the plate material and chamfered, and the rotating shaft of the multi-grinding stone is slightly inclined in the direction in which the chamfering amount increases as the plate material moves. After the C chamfering process, the grindstone blade edge grinds the edge of the plate material with the grindstone rotating at the machining contact point in the direction opposite to the plate material movement direction and the rotation axis being perpendicular to the plate material movement direction. Yes and arranged to, and Distance between the grinding wheel for grinding an end portion of the pair of upper and lower multi-grinding stone and plate members chamfering is equal to or smaller than Ryohen length of the plate to be chamfered.
[0007]
The processing method of the plate material according to the invention of claim 2 is a multi-grinding stone that rotates from the surface to the end surface direction with respect to the ridge corner portions of the front and back surfaces of the side portion along the moving direction of the plate material. A multi-grinding wheel that rotates in the direction from the back to the end face is interdigitated with a plurality of grinding stone single plates that make up the upper multi-grinding stone and a plurality of grinding stone single plates that make up the lower multi-grinding stone. The chamfering amount is slightly inclined in the direction in which the chamfer moves, and the pair of multi-grinding wheel edges are slidably contacted with the ridge corners of the two front and back surfaces of the plate material to perform C chamfering, and the C chamfering is performed. After processing, the distance between the pair of upper and lower multi-grinding stones is narrower than the edge length of the plate material to be chamfered, and the rotating shaft rotates in the direction opposite to the plate material moving direction at the processing contact point. Is a right angle abrasive Characterized by grinding the end portion of the plate material used.
[0008]
In order to make the present invention more effective, the distance between the grindstone cutting edge of the C chamfering processing means and the grindstone cutting edge of the edge processing means of the plate material arranged side by side is the ridge length of the plate material to be chamfered. It is good to set so that it may become narrower than this.
[0009]
Here, “so that the grindstone blade edge is in sliding contact with the ridge corners of the front and back two surfaces of the plate material” may move the plate material as the workpiece, or may move the chamfering means while fixing the plate material, Or it means that they may be moved together.
In consideration of the centering accuracy of the workpiece and downsizing of the driving device, it is preferable to move the plate material as the workpiece.
Moreover, grinding the edge part of a board | plate material is not only when carrying out R chamfering by making the grindstone which consists of a recessed part R shape to the C chamfering corner part of the end surface part after chamfering the edge surface of a board | plate material from the up-down direction, respectively. In the case of grinding so as to be in contact with the end face profile (end face part not chamfered) of the plate material after chamfering, or when processing the outer peripheral edge as shown in FIG. 7, the plate material as shown in FIG. This includes a grinding method by rotating the grindstone blade tip in the direction opposite to the moving direction of the plate material at the machining contact point, including the case of machining the corner portion of the steel plate, and its rotation control means.
[0010]
When the distance between the cutting edge of the grinding wheel for C chamfering and the cutting edge of the grinding wheel edge processing for the plate material such as R chamfering is set to be narrower than the length of the edge of the plate material, A chamfering process or the like is started.
In this case, the moving speed of the plate material is initially set to be relatively slow so that the workpiece can easily bite the cutting edge of the grindstone for R chamfering or the like, and after the start of R chamfering or the like, the moving speed is increased. It is preferable to set to.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
The principal part schematic diagram of the board | plate material processing apparatus 1 which concerns on FIG. 1 at this invention is shown.
The plate material processing apparatus 1 is provided with a mounting and fixing device 3 for setting a plate material such as a liquid crystal substrate 7 as a material to be ground on the table 2 and moves on the table Y axis.
Also, the upper side C chamfering grindstone 4 and the lower side C chamfering grindstone 5 are adjusted in position in the vertical Z-axis direction and the biting direction X-axis direction so as to contact the ridge corners of the two front and back surfaces of the liquid crystal substrate. It is attached as possible.
An R chamfering grindstone 6 is provided in parallel to the rear of the pair of chamfering grindstones 4 and 5 along the movement line of the edge to be chamfered of the liquid crystal substrate.
The R chamfering grindstone 6 can also be adjusted in position in the Z-axis direction and the X-axis direction.
The C chamfering grindstones 4 and 5 and the R chamfering grindstone 6 are rotatably supported by various driving means via a belt or the like, but are shown in FIG. Are omitted from these descriptions.
FIG. 1 shows an example in which a C chamfering grindstone and an R chamfering grindstone are juxtaposed along one edge of the liquid crystal substrate, but as shown in FIG. 2, along the other ridge edge of the liquid crystal substrate. Even if the chamfering grindstone and the R chamfering grindstone are respectively provided in a gate-like shape, it is possible to chamfer both sides of the liquid crystal substrate at one time.
[0012]
Next, the structure of a grindstone for chamfering will be described.
FIG. 3 schematically shows a contact surface between the liquid crystal substrate 7 and the grindstone.
The upper grindstone 4 rotates W1 from the surface 7a of the liquid crystal substrate 7 toward the end surface 7c.
On the other hand, the lower grindstone 5 rotates W2 from the back surface 7b of the liquid crystal substrate toward the end surface 7c.
FIG. 4 shows a state in which the C-chamfering grindstone 4 is viewed from above. For example, the grindstone 4 is a multi grindstone in which three grindstone single plates 41, 42, and 43 are stacked.
In addition, the number of grindstone single plates is arbitrarily set according to the thickness and chamfering amount of the work material.
The liquid crystal substrate 7 is moved from the bottom to the top.
On the other hand, the three multi-grinding stones are arranged so as to be in sliding contact with the ridge corners of the liquid crystal substrate at a slight angle with respect to the rotation axis.
The grinding allowance 81 is ground by the first grindstone 41, the portion of the grinding allowance 82 is ground by the second grindstone 42, the portion of the grinding allowance 83 is ground by the third grindstone 43, and a predetermined C chamfering is performed. Can be obtained.
The inclination angle of the multi-grinding wheel is selected according to the grindstone spacing and the C chamfering amount, but in the case of 0.1 to 0.2 mm C chamfering, the displacement between the whetstones at both ends is about 0.1 mm.
The lower grindstone 5 is also a multi grindstone made of three single grindstones, and is arranged so that the grindstone bites with the upper grindstone 4 so as to sandwich the liquid crystal substrate from above and below. By grinding in this manner, the run-out of the liquid crystal substrate with respect to the grindstone is prevented.
[0013]
The C chamfered liquid crystal substrate is then ground with an R chamfering grindstone 6.
The enlarged schematic diagram is shown in FIG.
The R chamfering grindstone 6 rotates in the direction opposite to the moving direction of the liquid crystal substrate, and has a concave R-shaped cutting edge 6a so as to grind the end surface portion of the liquid crystal substrate into a predetermined R shape.
Further, as shown in FIG. 1, since the interval L1 between the C chamfering grindstone and the R chamfering grindstone is set to be narrower (shorter) than the length L2 of the liquid crystal substrate, the liquid crystal substrate 7 is C chamfered while being chamfered. Processing also proceeds.
In this case, the moving speed of the liquid crystal substrate is set slower until the R chamfering starts.
In addition, although only one R groove is shown in the grindstone 6 shown in FIG. 4, for example, 6 to 9 grooves and a plurality of groove shapes are provided and selected according to the thickness of the plate material or the R chamfer shape. Good to use.
Through these steps, the ridge corners of the liquid crystal substrate are subjected to C chamfering (C1, C2) and R chamfering processing (R1, R2) as shown in FIG.
Further, instead of the R chamfering grindstone 6, an outer shape shaping grindstone 61 may be used as shown in FIG. 7, or the corner portion may be ground with a corner processing grindstone as shown in FIG.
[0014]
【The invention's effect】
According to the present invention, a chamfering grindstone and an edge processing grindstone such as an R chamfer are juxtaposed, and it is possible to continuously perform C chamfering of a plate material and edge processing of the plate material with one processing device. Compared to the conventional need for two chamfering and chamfering and edge processing machines, the processing equipment is more compact, the conveyor between the above processes is not required, and material installation variation due to conveyance The stability of machining accuracy can be expected.
This also dramatically shortens the overall length of the processing line and shortens the line tact.
Furthermore, the amount of semi-finished products in the process can be reduced.
If the distance between the chamfering grindstone and the R chamfering grindstone or the contour shaping grindstone is set narrower than the length of the plate material as the work material, the C chamfering and the R chamfering or contour shaping processing are synchronized simultaneously and simultaneously. The processing apparatus can be made more compact.
[Brief description of the drawings]
FIG. 1 is a configuration diagram of a main part of a chamfering apparatus 1 according to the present invention.
FIG. 2 shows an example in which chamfering means are provided on both sides of a plate material.
FIG. 3 shows a state in which the plate material is chamfered in the vertical direction.
FIG. 4 shows a configuration of a chamfering grindstone.
FIG. 5 shows a state in which the chamfering is performed.
FIG. 6 shows a chamfered state of a liquid crystal substrate or the like.
FIG. 7 shows a state of external shape processing.
FIG. 8 shows an example of corner processing of a plate material.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Plate processing apparatus 2 Table 3 Work place fixing device 4 C chamfering grindstone (upper side)
5 Chamfering wheel (lower side)
6 R chamfering grindstone 6a R chamfering grindstone recess R-shaped portion 61 Plate material end face grinding grindstone 7 Plate material (liquid crystal substrate)
7a Plate material front surface 7b Plate material back surface 7c Plate material end surface 81, 82, 83 Grinding allowance

Claims (2)

板材の移動方向に沿った側部の表裏2面の稜角部に対して、表面から端面方向に回転するマルチ砥石と、これとは逆に裏面から端面方向に回転するマルチ砥石とを上下一対備え、
上部のマルチ砥石を構成する複数の砥石単板と下部のマルチ砥石を構成する複数の砥石単板が相互にかみ込み且つ、その砥石刃先が前記板材の表裏2面の稜角部に摺接し、C面取り加工するように配置してあり、
マルチ砥石の回転軸は板材が移動するにつれてC面取り量が増大する方向にわずかに傾斜していて、
当該C面取り加工の後に、加工接触点において板材の移動方向とは反対方向に回転し回転軸が板材の移動方向とは直角方向に配置した砥石をその砥石刃先が板材の端部を研削するように配置してあり、且つC面取り加工する上下一対のマルチ砥石と板材の端部を研削する砥石との間隔が面取り加工される板材の稜辺長さより狭いことを特徴とする板材の加工装置。
A pair of upper and lower multi grindstones that rotate from the front surface to the end surface direction and a multi grindstone that rotates from the back surface to the end surface direction with respect to the ridge corners of the two front and back surfaces along the moving direction of the plate material. ,
A plurality of grindstone single plates constituting the upper multi-grinding stone and a plurality of grindstone single plates constituting the lower multi-grinding stone are engaged with each other, and the grindstone cutting edge is in sliding contact with the ridge corners on the front and back surfaces of the plate, C It is arranged to be chamfered,
The rotating shaft of the multi-grinding wheel is slightly inclined in the direction in which the C chamfering amount increases as the plate moves.
After the C-chamfering process, a grindstone that rotates in the direction opposite to the moving direction of the plate material at the machining contact point and the rotating shaft is arranged in a direction perpendicular to the moving direction of the plate material so that the grindstone blade edge grinds the end portion of the plate material. An apparatus for processing a plate material, characterized in that a distance between a pair of upper and lower multi-grinding stones to be chamfered and a grindstone for grinding an end portion of the plate material is narrower than a ridge side length of the plate material to be chamfered .
板材の移動方向に沿った側部の表裏2面の稜角部に対して、表面から端面方向に回転するマルチ砥石と、これとは逆に裏面から端面方向に回転するマルチ砥石とを、上部のマルチ砥石を構成する複数の砥石単板と下部のマルチ砥石を構成する複数の砥石単板が相互にかみ込み、マルチ砥石の回転軸は板材が移動するにつれてC面取り量が増大する方向にわずかに傾斜していて、
その一対のマルチ砥石刃先を、前記板材の表裏2面の稜角部に摺接させてC面取り加工を施し、当該C面取り加工の後に、前記上下一対のマルチ砥石との間隔が面取り加工される板材の稜辺長さより狭く、且つ加工接触点において板材の移動方向とは反対方向に回転し回転軸が板材の移動方向とは直角方向に配置した砥石を用いて板材の端部を研削することを特徴とする板材の加工方法。
A multi-grinding wheel that rotates from the front surface to the end surface direction and a multi-grinding stone that rotates from the back surface to the end surface direction with respect to the ridge corners of the two front and back surfaces along the moving direction of the plate material , A plurality of grinding wheel single plates constituting the multi-grinding wheel and a plurality of grinding stone single plates constituting the multi-grinding wheel below are engaged with each other, and the rotation axis of the multi-grinding wheel is slightly increased in the direction in which the chamfering amount increases as the plate material moves. Be inclined,
The pair of multi-grinding wheel cutting edges are slidably contacted with the ridge corners of the two front and back surfaces of the plate material to perform C-chamfering, and after the C-chamfering processing, the plate material whose interval between the pair of upper and lower multi-grinding wheels is chamfered. The edge of the plate is ground using a grindstone that is narrower than the edge length of the plate and rotates in the direction opposite to the direction of movement of the plate at the processing contact point and the rotation axis is arranged in a direction perpendicular to the direction of movement of the plate. The processing method of the board material characterized.
JP2002022588A 2002-01-30 2002-01-30 Processing method and apparatus for plate material Expired - Fee Related JP3980896B2 (en)

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