[go: up one dir, main page]

JP3974154B2 - Optical semiconductor module and optical semiconductor device - Google Patents

Optical semiconductor module and optical semiconductor device Download PDF

Info

Publication number
JP3974154B2
JP3974154B2 JP2006050188A JP2006050188A JP3974154B2 JP 3974154 B2 JP3974154 B2 JP 3974154B2 JP 2006050188 A JP2006050188 A JP 2006050188A JP 2006050188 A JP2006050188 A JP 2006050188A JP 3974154 B2 JP3974154 B2 JP 3974154B2
Authority
JP
Japan
Prior art keywords
terminal
optical semiconductor
cathode
cathode terminal
envelope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006050188A
Other languages
Japanese (ja)
Other versions
JP2006148169A5 (en
JP2006148169A (en
Inventor
功 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2006050188A priority Critical patent/JP3974154B2/en
Publication of JP2006148169A publication Critical patent/JP2006148169A/en
Publication of JP2006148169A5 publication Critical patent/JP2006148169A5/ja
Application granted granted Critical
Publication of JP3974154B2 publication Critical patent/JP3974154B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)

Description

本発明は、例えば発光ダイオード等を用いてなる光半導体モジュール及び光半導体装置に関する。 The present invention relates to an optical semiconductor module and an optical semiconductor device using, for example, a light emitting diode.

従来、発光ダイオード等を用いた光半導体装置は、例えば次のようにして形成されていた。すなわち、先ず第１の従来技術においては、リードフレームの凹形状に形成した反射板部の内底部中央部分上に、例えば発光ダイオード等の光半導体素子をマウントし、リードフレームと光半導体素子の対応する部分同士をボンディングワイヤで接続する。   Conventionally, an optical semiconductor device using a light emitting diode or the like has been formed as follows, for example. That is, first, in the first prior art, an optical semiconductor element such as a light emitting diode is mounted on the central portion of the inner bottom part of the reflecting plate part formed in the concave shape of the lead frame, and the correspondence between the lead frame and the optical semiconductor element is achieved. The parts to be connected are connected with bonding wires.

その後、光半導体素子をマウントしたリードフレームを、予め光透過性合成樹脂を注入し半硬化させた状態にしてある成形型内に入れる。そして、光透過性合成樹脂を硬化した後、成形型を所定形状の光透過性合成樹脂が成形されているリードフレームから外し、所定形状の光透過性合成樹脂により光半導体素子を覆った所要の光学特性を有する光半導体装置を得る。   Thereafter, the lead frame on which the optical semiconductor element is mounted is placed in a mold that has been previously infused with a light-transmitting synthetic resin and is semi-cured. Then, after curing the light-transmitting synthetic resin, the mold is removed from the lead frame on which the light-transmitting synthetic resin having the predetermined shape is molded, and the optical semiconductor element is covered with the light-transmitting synthetic resin having the predetermined shape. An optical semiconductor device having optical characteristics is obtained.

また、第２の従来技術においては、略平坦に形成されたリードフレームに、光半導体素子をマウントするマウント部及びボンディング部分を避け、マウント部が凹部内底部に位置するように光反射性を有する例えば白色の合成樹脂で外囲器を成形する。そして、光半導体素子をマウント部にマウントし、リードフレームと光半導体素子の対応する部分同士をボンディングワイヤで接続する。その後、外囲器の凹部内に光半導体素子を覆うように光透過性合成樹脂を充填し硬化して光放射部を形成し、所要の光学特性を有する光半導体装置を得る。   In the second prior art, the lead frame formed in a substantially flat shape has light reflectivity so that the mount portion and the bonding portion for mounting the optical semiconductor element are avoided, and the mount portion is positioned at the inner bottom portion of the recess. For example, the envelope is formed of white synthetic resin. Then, the optical semiconductor element is mounted on the mount portion, and corresponding portions of the lead frame and the optical semiconductor element are connected to each other with a bonding wire. Thereafter, a light-transmitting synthetic resin is filled into the recess of the envelope so as to cover the optical semiconductor element and cured to form a light emitting portion, thereby obtaining an optical semiconductor device having required optical characteristics.

しかしながら上記の第１の従来技術では、リードフレームの凹形状に形成した反射板部での光反射効果しか得られないために光取出し効率が低く、また光透過性合成樹脂を所定形状に成形して光半導体素子を覆うため、製造工程の中で用いる成形型が必要で、成形型の摩耗等に対応して型交換を定期的にしなければならず、ランニングコストを含め生産性が低いために光半導体装置コストの低廉化が難しいものとなっている。一方、第２の従来技術では、白色の合成樹脂で成形した外囲器の凹部による光反射効果しか得られないために、外囲器の凹部開口を通じての光取出し効率が低く、光半導体装置の光取出し効率をより高くすることが強く求められている。   However, in the first prior art described above, only the light reflection effect at the reflecting plate portion formed in the concave shape of the lead frame can be obtained, so the light extraction efficiency is low, and the light-transmitting synthetic resin is molded into a predetermined shape. In order to cover the optical semiconductor element, a mold used in the manufacturing process is necessary, and the mold must be replaced periodically corresponding to the wear of the mold, etc., and the productivity is low including the running cost. It is difficult to reduce the cost of optical semiconductor devices. On the other hand, in the second prior art, since only the light reflection effect by the concave portion of the envelope molded with white synthetic resin can be obtained, the light extraction efficiency through the concave portion opening of the envelope is low, and the optical semiconductor device There is a strong demand for higher light extraction efficiency.

本発明は、高密度に実装した光半導体モジュール及び光半導体装置を提供することにある。 An object of the present invention is to provide an optical semiconductor module and an optical semiconductor device mounted at high density.

本発明の光半導体モジュールは、
外囲器から第１の方向に、アノード端子とカソード端子の第１の端子が延出し、
前記外囲器から第１の方向の逆方向である第２の方向に、カソード端子の第２の端子とカソード端子の第３の端子が延出し、
前記アノード端子の幅は、前記カソード端子の第１の端子の幅より狭く、
前記カソード端子の第２の端子の幅は、前記カソード端子の第３の端子の幅より狭く、
前記カソード端子の第２の端子と、前記カソード端子の第３の端子との間隔は、前記アノード端子の幅よりも広く、
前記アノード端子と、前記カソード端子の第１の端子との間隔は、前記カソード端子の第２の端子の幅よりも広い複数の光半導体装置が配置された光半導体モジュールであって、
前記光半導体装置の隣接するもの同士は、一方の前記光半導体装置の前記アノード端子と前記カソード端子の第１の端子と、他方の前記光半導体装置の前記カソード端子の第２の端子と前記カソード端子の第３の端子とが、互い噛み合うよう組み合わせて配置されていることを特徴とするものであり、
また、光半導体装置は、
アノード端子、カソード端子を形成したリードフレームと、
前記両端子を外部に延出させるようにして前記リードフレームに一体に形成した外囲器と、
前記リードフレームに固着された光半導体素子を具備し、
前記リードフレームは、
前記外囲器から第１の方向に、前記アノード端子と、前記カソード端子の第１の端子が延出し、
前記外囲器から前記第１の方向の逆方向である第２の方向に、前記カソード端子の第２の端子と、前記カソード端子の第３の端子が延出し、
前記アノード端子の幅は、前記カソード端子の第１の端子の幅より狭く、
前記カソード端子の第２の端子の幅は、前記カソード端子の第３の端子の幅より狭く、
前記カソード端子の第２の端子と、前記カソード端子の第３の端子との間隔は、前記アノード端子の幅よりも広く、
前記アノード端子と、前記カソード端子の第１の端子との間隔は、前記カソード端子の第２の端子の幅よりも広いことを特徴とするものである。 The optical semiconductor module of the present invention is
A first terminal of an anode terminal and a cathode terminal extends from the envelope in a first direction,
A second terminal of the cathode terminal and a third terminal of the cathode terminal extend from the envelope in a second direction that is opposite to the first direction,
The width of the anode terminal is narrower than the width of the first terminal of the cathode terminal,
The width of the second terminal of the cathode terminal is narrower than the width of the third terminal of the cathode terminal,
The distance between the second terminal of the cathode terminal and the third terminal of the cathode terminal is wider than the width of the anode terminal,
An interval between the anode terminal and the first terminal of the cathode terminal is an optical semiconductor module in which a plurality of optical semiconductor devices wider than the width of the second terminal of the cathode terminal are arranged,
The adjacent ones of the optical semiconductor devices are the first terminal of the anode terminal and the cathode terminal of one optical semiconductor device, the second terminal of the cathode terminal of the other optical semiconductor device, and the cathode. The third terminal of the terminal is arranged in combination so as to mesh with each other ,
In addition, the optical semiconductor device
A lead frame formed with an anode terminal and a cathode terminal;
An envelope formed integrally with the lead frame so as to extend both terminals to the outside;
Comprising an optical semiconductor element fixed to the lead frame;
The lead frame is
In the first direction from the envelope, the anode terminal and the first terminal of the cathode terminal,
A second terminal of the cathode terminal and a third terminal of the cathode terminal extend from the envelope in a second direction that is opposite to the first direction,
The width of the anode terminal is narrower than the width of the first terminal of the cathode terminal,
The width of the second terminal of the cathode terminal is narrower than the width of the third terminal of the cathode terminal,
The distance between the second terminal of the cathode terminal and the third terminal of the cathode terminal is wider than the width of the anode terminal,
The gap between the anode terminal and the first terminal of the cathode terminal is wider than the width of the second terminal of the cathode terminal.

本発明によれば、高密度に実装した光半導体モジュール及び光半導体装置を得ることができる。 According to the present invention, an optical semiconductor module and an optical semiconductor device mounted with high density can be obtained.

以下本発明の一実施形態を、図１乃至図１４を参照して説明する。図１は斜視図であり、図２は図３におけるＡ−Ａ矢方向視の縦断面図であり、図３は平面図であり、図４は正面図であり、図５は側面図であり、図６はリードフレームを示す図で、図６（ａ）は平面図、図６（ｂ）は図６（ａ）のＸ−Ｘ矢方向視の断面図、図６（ｃ）は図６（ａ）のＹ−Ｙ矢方向視の断面図、図６（ｄ）は図６（ａ）のＺ−Ｚ矢方向視の断面図であり、図７は複数の光半導体装置を実装した光半導体モジュールを示す平面図であり、図８は図７の一部を拡大して示す平面図である。   Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 is a perspective view, FIG. 2 is a longitudinal cross-sectional view as viewed in the direction of arrow AA in FIG. 3, FIG. 3 is a plan view, FIG. 4 is a front view, and FIG. 6 is a view showing a lead frame, FIG. 6 (a) is a plan view, FIG. 6 (b) is a cross-sectional view in the direction of arrow XX in FIG. 6 (a), and FIG. 6 (c) is FIG. 6A is a cross-sectional view as viewed in the direction of arrows Y-Y in FIG. 6A, FIG. 6D is a cross-sectional view in the direction of arrows Z-Z in FIG. 6A, and FIG. FIG. 8 is a plan view showing a semiconductor module, and FIG. 8 is an enlarged plan view showing a part of FIG.

また、図９は第１の変形形態の斜視図であり、図１０は第１の変形形態の平面図であり、図１１は第１の変形形態の正面図であり、図１２は第２の変形形態の斜視図であり、図１３は第２の変形形態の平面図であり、図１４は第２の変形形態の正面図である。   9 is a perspective view of the first modification, FIG. 10 is a plan view of the first modification, FIG. 11 is a front view of the first modification, and FIG. FIG. 13 is a perspective view of a modification, FIG. 13 is a plan view of the second modification, and FIG. 14 is a front view of the second modification.

図１乃至図８において、１は光半導体装置で、外形が略正方形の平面形状をなす略直方体状の外囲器２と、所定形状に形成したリードフレーム３とを一体成形した構成を有し、さらに、例えば発光ダイオード等の光半導体素子４をリードフレーム３上に固着して外囲器２内に収納した構成となっている。そして外囲器２の上部には、上方に向け開口する放射開口５内を埋め込み、光半導体素子４を覆うように設けた光透過性合成樹脂、例えばシリコーン系樹脂等による上面凸形状の光放射部６を備えたものとなっている。なお、光半導体素子４からの放射光は、光放射部６を介し上方に向けて放射される。   1 to 8, reference numeral 1 denotes an optical semiconductor device, which has a configuration in which a substantially rectangular parallelepiped envelope 2 having a substantially square planar shape and a lead frame 3 formed in a predetermined shape are integrally formed. Further, for example, an optical semiconductor element 4 such as a light emitting diode is fixed on the lead frame 3 and accommodated in the envelope 2. In the upper part of the envelope 2, the inside of the radiation opening 5 that opens upward is embedded, and a light-transmitting synthetic resin provided so as to cover the optical semiconductor element 4, for example, a silicone-based resin or the like, has a convex surface. The unit 6 is provided. The emitted light from the optical semiconductor element 4 is radiated upward through the light emitting unit 6.

さらに、外囲器２の相対する外側壁の一方の側壁からアノード端子７と第１のカソード端子８が延出し、他方の側壁から第２のカソード端子９と第３のカソード端子１０が延出している。なお、アノード端子７と第３のカソード端子１０は各側壁の一方側に偏った位置から延出し、第１のカソード端子８と第２のカソード端子９は各側壁の他方側に偏った位置から延出しており、さらにアノード端子７と第１のカソード端子８の間には第２のカソード端子９の幅より大きい間隔が形成されており、第２のカソード端子９と第３のカソード端子１０の間にはアノード端子７の幅より大きい間隔が形成されている。   Further, the anode terminal 7 and the first cathode terminal 8 extend from one side wall of the outer wall facing the envelope 2, and the second cathode terminal 9 and the third cathode terminal 10 extend from the other side wall. ing. The anode terminal 7 and the third cathode terminal 10 extend from a position biased to one side of each side wall, and the first cathode terminal 8 and the second cathode terminal 9 from a position biased to the other side of each side wall. Further, an interval larger than the width of the second cathode terminal 9 is formed between the anode terminal 7 and the first cathode terminal 8, and the second cathode terminal 9 and the third cathode terminal 10 are formed. An interval larger than the width of the anode terminal 7 is formed between them.

また、外囲器２は、光反射性を有する合成樹脂、例えば白色のエポキシ系樹脂、あるいはポリカーボネート樹脂等で成形したもので、その上部に内側壁１１を傾斜反射面として、例えばすり鉢形状にした凹形状の反射部１２を有している。一方、リードフレーム３は、銅あるいは銅合金等の板材を所定形状に形成したものであって、アノード端子７を連設したアノード極部１３と、３つのカソード端子８，９，１０を連設したカソード極部１４とが、両極部１３，１４との間に所定間隔を設け、カソード極部１４の縁部分の一部に沿うようにアノード極部１３を設けて形成してある。なお、外囲器２とリードフレーム３とが一体成形となっていることで、両極部１３，１４の上面が、反射部１２の内底部１５に露出している。   The envelope 2 is formed of a light-reflective synthetic resin, such as a white epoxy resin or polycarbonate resin, and has an inner wall 11 as an inclined reflective surface on the top thereof, for example, in a mortar shape. It has a concave reflecting portion 12. On the other hand, the lead frame 3 is formed of a plate material such as copper or copper alloy in a predetermined shape, and the anode pole portion 13 provided with the anode terminal 7 and the three cathode terminals 8, 9, and 10 are provided continuously. The cathode electrode part 14 is formed by providing a predetermined interval between the electrode parts 13 and 14 and providing the anode electrode part 13 along a part of the edge part of the cathode electrode part 14. Since the envelope 2 and the lead frame 3 are integrally formed, the upper surfaces of the two pole portions 13 and 14 are exposed at the inner bottom portion 15 of the reflecting portion 12.

また、カソード極部１４には、例えばすり鉢形状にした凹形状の反射板部１６を有し、反射板部１６の平坦に形成した内底部１７が光半導体素子４のマウント部位となっている。そして、カソード極部１４には、マウント部位となっている反射板部１６の内底部１７からアノード極部１３の方向に向けて、底部を反射板部１６の内底部１７と同じ深さ位置にした凹部１８が形成してある。   Further, the cathode pole portion 14 has a concave reflecting plate portion 16 having, for example, a mortar shape, and the inner bottom portion 17 formed flat of the reflecting plate portion 16 is a mounting portion of the optical semiconductor element 4. The cathode pole portion 14 has a bottom portion at the same depth as the inner bottom portion 17 of the reflecting plate portion 16 from the inner bottom portion 17 of the reflecting plate portion 16 serving as a mount portion toward the anode pole portion 13. A recessed portion 18 is formed.

さらに、外囲器２と一体成形されたリードフレーム３の反射板部１６の内底部１７には、光半導体素子４が導電性接着剤で固着することによって、反射部１２及び反射板部１６の略中央に位置するようマウントしてあり、光半導体素子４の下面のカソードがカソード極部１４に導通した状態になっている。また光半導体素子４の上面のアノードには、金（Ａｕ）製のボンディングワイヤ１９の一端がボンディングしてあり、他端がアノード極部１３に凹部１８の直上を経由し、所定の絶縁距離が得られるようにしてボンディングしてある。   Further, the optical semiconductor element 4 is fixed to the inner bottom portion 17 of the reflection plate portion 16 of the lead frame 3 integrally formed with the envelope 2 with a conductive adhesive, whereby the reflection portion 12 and the reflection plate portion 16. It is mounted so as to be positioned substantially at the center, and the cathode on the lower surface of the optical semiconductor element 4 is in a conductive state with the cathode electrode portion 14. One end of a bonding wire 19 made of gold (Au) is bonded to the anode on the upper surface of the optical semiconductor element 4, and the other end passes through the anode pole portion 13 directly above the recess 18, and has a predetermined insulation distance. Bonding is done so that it can be obtained.

そして、リードフレーム３が一体成形された外囲器２の放射開口５を介し、上方から反射部１２及び反射板部１６内に、シリコーン系樹脂等の光透過性合成樹脂を、所要の光学特性が得られる形状、例えば所定の集光レンズ形状となるよう充填量を調節しながら、光半導体素子４を覆うように順次充填する。所定の充填を行なった後、光透過性合成樹脂を硬化して光放射部６を外囲器２の上部に形成し、光半導体装置１とする。   Then, a light-transmitting synthetic resin such as a silicone-based resin is applied to the reflecting portion 12 and the reflecting plate portion 16 from above through the radiation opening 5 of the envelope 2 in which the lead frame 3 is integrally formed, and the required optical characteristics. Are sequentially filled so as to cover the optical semiconductor element 4 while adjusting the filling amount so as to obtain a shape such as a predetermined condenser lens shape. After performing the predetermined filling, the light-transmitting synthetic resin is cured to form the light emitting portion 6 on the upper portion of the envelope 2 to obtain the optical semiconductor device 1.

また、上記のように構成した光半導体装置１の実装基板への実装は、アノード端子７をアノード配線部に半田付けし、またこれより大面積のカソード配線部に３つのカソード端子８，９，１０全てを半田付けすることによってなされる。   The optical semiconductor device 1 configured as described above is mounted on the mounting substrate by soldering the anode terminal 7 to the anode wiring portion, and three cathode terminals 8, 9, This is done by soldering all 10 pieces.

以上の通り構成することによって、光半導体装置１の製造工程の中では、成形型を用いることなく光放射部６を形成することができ、成形型の摩耗等に対応した定期的な型交換がなく、生産性が向上して装置コストを低廉化することが可能となる。また光半導体素子４からの放射光については、リードフレーム３の反射板部１６及び光反射性を有する合成樹脂でなる外囲器２の反射部１２による各反射によって放射開口５方向に指向したものとなるので、光取出し効率が向上したものとなる。さらに実装に際しては、複数延出したカソード端子８，９，１０全てを比較的大面積のカソード配線部に半田付けすることによって、光半導体装置１での発生熱を効率よく外部に放出することができる。   By configuring as described above, in the manufacturing process of the optical semiconductor device 1, the light emitting portion 6 can be formed without using a mold, and periodic mold replacement corresponding to wear of the mold is performed. Therefore, productivity can be improved and the cost of the apparatus can be reduced. In addition, the radiated light from the optical semiconductor element 4 is directed in the direction of the radiating opening 5 by each reflection by the reflecting plate portion 16 of the lead frame 3 and the reflecting portion 12 of the envelope 2 made of synthetic resin having light reflectivity. Therefore, the light extraction efficiency is improved. Further, when mounting, all the plurality of extended cathode terminals 8, 9, and 10 are soldered to the cathode wiring portion having a relatively large area, so that the heat generated in the optical semiconductor device 1 can be efficiently released to the outside. it can.

また、上記のように構成したことによって、図７及び図８に示すように、複数の光半導体装置１を、各光半導体装置１が交差する複数の直線の交点上に位置させ実装基板２０上に略面状をなすように配列し、さらに光半導体装置１を直列接続して面状の発光体様、すなわち、光半導体モジュール２５とする場合には、外囲器２の一方の外側壁から延出するアノード端子７が、隣接する光半導体装置１の他方の外側壁から延出する第２のカソード端子９と第３のカソード端子１０の間に、各端子７，９，１０の側部同士が隣接し、互いに噛み合うように組み合わせ配置して、各端子７，９，１０が実装基板２０の配線部２１に半田付けされる。これにより、光半導体装置１を実装基板２０上に高密度で実装した光半導体モジュール２５とすることができる。   Further, by configuring as described above, as shown in FIGS. 7 and 8, the plurality of optical semiconductor devices 1 are positioned on the intersections of a plurality of straight lines intersecting with the respective optical semiconductor devices 1 and mounted on the mounting substrate 20. When the optical semiconductor device 1 is further connected in series to form a planar light-emitting body, that is, the optical semiconductor module 25, the outer surface of the envelope 2 is separated from one outer wall. The extending anode terminal 7 is located between the second cathode terminal 9 and the third cathode terminal 10 extending from the other outer wall of the adjacent optical semiconductor device 1, and the side portions of the terminals 7, 9, 10. The terminals 7, 9, and 10 are soldered to the wiring part 21 of the mounting substrate 20 by being arranged so that they are adjacent to each other and mesh with each other. As a result, the optical semiconductor module 1 in which the optical semiconductor device 1 is mounted on the mounting substrate 20 with high density can be obtained.

また、上記の光半導体装置１の実施形態においては、略直方体状の外囲器２の相対する２つの外側壁から１つのアノード端子７、３つのカソード端子８，９，１０を延出させるように構成したが、図９及び図１０、図１１に示す第１の変形形態のように構成してもよい。すなわち、光半導体装置１ａにおいて、上記実施形態と同様に、光反射性を有する合成樹脂でなる略直方体状の外囲器２には、図示しないが、そのすり鉢形状にした凹形状の反射部の内底部に、リードフレーム３ａのすり鉢形状にした凹形状の反射板部が位置し、反射板部の内底部に光半導体素子を固着している。そして、外囲器２の放射開口５を介して光透過性合成樹脂が、所要の光学特性が得られる形状となるよう反射部及び反射板部内に充填してあり、外囲器２の上部に光半導体素子からの放射光を放出する光放射部６を固着している。   In the embodiment of the optical semiconductor device 1 described above, the one anode terminal 7 and the three cathode terminals 8, 9, and 10 are extended from the two opposite outer walls of the substantially rectangular parallelepiped envelope 2. However, it may be configured as in the first modification shown in FIGS. 9, 10, and 11. That is, in the optical semiconductor device 1a, as in the above-described embodiment, the substantially rectangular parallelepiped envelope 2 made of a synthetic resin having light reflectivity is not shown, but the concave reflecting portion having a mortar shape is formed. On the inner bottom portion, a concave reflecting plate portion in the shape of a mortar of the lead frame 3a is located, and an optical semiconductor element is fixed to the inner bottom portion of the reflecting plate portion. Then, the light-transmitting synthetic resin is filled in the reflecting portion and the reflecting plate portion so as to obtain a required optical characteristic through the radiation opening 5 of the envelope 2, and is placed on the upper portion of the envelope 2. A light emitting portion 6 that emits light emitted from the optical semiconductor element is fixed.

また外囲器２には、その一方の相対する外側壁の各々から、狭幅に形成されたアノード端子７aと第１のカソード端子８ａとがそれぞれ側壁中央から延出している。さらに他方の相対する外側壁の各々からは、広幅に形成された第２のカソード端子９ａと第３のカソード端子１０ａがそれぞれ側壁中央から延出している。   The envelope 2 has a narrow anode terminal 7a and a first cathode terminal 8a extending from the center of the side wall from one of the opposing outer walls. Furthermore, from each of the other outer walls facing each other, a second cathode terminal 9a and a third cathode terminal 10a, which are formed wide, extend from the center of the side wall.

以上の通り構成することで、本変形形態においても上記の実施形態と同様に、光半導体装置１ａの製造工程の中で成形型を用いないため、定期的な型交換がなく、生産性が向上して装置コストを低廉化することが可能であり、また光取出し効率が向上したものとなる。さらに光半導体装置１ａの実装に際しては、複数延出したカソード端子８ａ，９ａ，１０ａ全てを比較的大面積のカソード配線部に半田付けすることによって、光半導体装置１ａでの発生熱を効率よく外部に放出することができる。   By configuring as described above, in the present modified embodiment as well, the mold is not used in the manufacturing process of the optical semiconductor device 1a, so that there is no periodic mold replacement and productivity is improved. Thus, the apparatus cost can be reduced, and the light extraction efficiency is improved. Furthermore, when the optical semiconductor device 1a is mounted, the plurality of extended cathode terminals 8a, 9a, and 10a are all soldered to the cathode wiring portion having a relatively large area, thereby efficiently generating heat generated in the optical semiconductor device 1a. Can be released.

また、図１２及び図１３、図１４に示す第２の変形形態のように構成してもよい。すなわち、光半導体装置１ｂにおいて、上記実施形態と同様に、光反射性を有する合成樹脂でなる略直方体状の外囲器２には、図示しないが、そのすり鉢形状にした凹形状の反射部の内底部に、リードフレーム３ｂのすり鉢形状にした凹形状の反射板部が位置し、反射板部の内底部に光半導体素子を固着している。そして、外囲器２の放射開口５を介して光透過性合成樹脂が、所要の光学特性が得られる形状となるよう反射部及び反射板部内に充填してあり、外囲器２の上部に光半導体素子からの放射光を放出する光放射部６を固着している。   Moreover, you may comprise like the 2nd modification shown in FIG.12 and FIG.13, FIG.14. That is, in the optical semiconductor device 1b, as in the above-described embodiment, the substantially rectangular parallelepiped envelope 2 made of synthetic resin having light reflectivity is not shown, but the concave reflecting portion having a mortar shape is formed. On the inner bottom portion, a concave reflecting plate portion having a mortar shape of the lead frame 3b is located, and the optical semiconductor element is fixed to the inner bottom portion of the reflecting plate portion. Then, the light-transmitting synthetic resin is filled in the reflecting portion and the reflecting plate portion so as to obtain a required optical characteristic through the radiation opening 5 of the envelope 2, and is placed on the upper portion of the envelope 2. A light emitting portion 6 that emits light emitted from the optical semiconductor element is fixed.

また外囲器２には、その相対する外側壁の各々から、比較的広幅のアノード端子７ｂとカソード端子８ｂとがそれぞれ側壁中央から延出している。さらに両端子７ｂ，８ｂには、上下方向に貫通して固定孔２２が形成してある。   The envelope 2 has a relatively wide anode terminal 7b and cathode terminal 8b extending from the center of the side wall from each of the opposing outer walls. Further, both terminals 7b and 8b are formed with fixing holes 22 penetrating in the vertical direction.

以上の通り構成することで、本変形形態においても上記の実施形態と同様に、光半導体装置１ｂの製造工程の中で成形型を用いないため、定期的な型交換がなく、生産性が向上して装置コストを低廉化することが可能であり、また光取出し効率が向上したものとなる。さらに本変形形態においては、光半導体装置１ｂの実装に際し、アノード端子７ｂとカソード端子８ｂとを固定孔２２によってねじ止め等することで、確実に固定することができる。   By configuring as described above, in this modified embodiment as well, the mold is not used in the manufacturing process of the optical semiconductor device 1b, so that there is no periodic mold replacement, and productivity is improved. Thus, the apparatus cost can be reduced, and the light extraction efficiency is improved. Furthermore, in this modification, when the optical semiconductor device 1b is mounted, the anode terminal 7b and the cathode terminal 8b can be securely fixed by screwing or the like with the fixing hole 22.

本発明の一実施形態を示す斜視図である。It is a perspective view which shows one Embodiment of this invention. 本発明の一実施形態を示す図３におけるＡ−Ａ矢方向視の縦断面図である。It is a longitudinal cross-sectional view of the AA arrow direction view in FIG. 3 which shows one Embodiment of this invention. 本発明の一実施形態を示す平面図である。It is a top view which shows one Embodiment of this invention. 本発明の一実施形態を示す正面図である。It is a front view showing one embodiment of the present invention. 本発明の一実施形態を示す側面図である。It is a side view which shows one Embodiment of this invention. 本発明の一実施形態におけるリードフレームを示す図で、図６（ａ）は平面図、図６（ｂ）は図６（ａ）のＸ−Ｘ矢方向視の断面図、図６（ｃ）は図６（ａ）のＹ−Ｙ矢方向視の断面図、図６（ｄ）は図６（ａ）のＺ−Ｚ矢方向視の断面図である。6A and 6B are views showing a lead frame according to an embodiment of the present invention, in which FIG. 6A is a plan view, FIG. FIG. 6A is a cross-sectional view in the direction of the arrow YY in FIG. 6A, and FIG. 6D is a cross-sectional view in the direction of the arrow ZZ in FIG. 本発明の一実施形態に係る複数の光半導体装置を実装した光半導体モジュールを示す平面図である。It is a top view which shows the optical semiconductor module which mounted the some optical semiconductor device which concerns on one Embodiment of this invention. 本発明の一実施形態に係る図７の一部を拡大して示す平面図である。It is a top view which expands and shows a part of FIG. 7 which concerns on one Embodiment of this invention. 本発明の一実施形態に係る第１の変形形態の斜視図である。It is a perspective view of the 1st modification concerning one embodiment of the present invention. 本発明の一実施形態に係る第１の変形形態の平面図である。It is a top view of the 1st modification concerning one embodiment of the present invention. 本発明の一実施形態に係る第１の変形形態の正面図である。It is a front view of the 1st modification concerning one embodiment of the present invention. 本発明の一実施形態に係る第２の変形形態の斜視図である。It is a perspective view of the 2nd modification concerning one embodiment of the present invention. 本発明の一実施形態に係る第２の変形形態の平面図である。It is a top view of the 2nd modification concerning one embodiment of the present invention. 本発明の一実施形態に係る第２の変形形態の正面図である。It is a front view of the 2nd modification concerning one embodiment of the present invention.

符号の説明Explanation of symbols

２…外囲器
３…リードフレーム
４…光半導体素子
６…光放射部
７…アノード端子
８…第１のカソード端子
９…第２のカソード端子
１０…第３のカソード端子
１２…反射部
１５…内底部（反射部の）
１６…反射板部
１７…内底部（反射板部の）
１８…凹部
１９…ボンディングワイヤ DESCRIPTION OF SYMBOLS 2 ... Envelope 3 ... Lead frame 4 ... Optical semiconductor element 6 ... Light emission part 7 ... Anode terminal 8 ... 1st cathode terminal 9 ... 2nd cathode terminal 10 ... 3rd cathode terminal 12 ... Reflection part 15 ... Inner bottom (of reflection part)
16 ... Reflecting plate part 17 ... Inner bottom part (of reflecting plate part)
18 ... concave 19 ... bonding wire

Claims (5)

外囲器から第１の方向に、アノード端子とカソード端子の第１の端子が延出し、
前記外囲器から第１の方向の逆方向である第２の方向に、カソード端子の第２の端子とカソード端子の第３の端子が延出し、
前記アノード端子の幅は、前記カソード端子の第１の端子の幅より狭く、
前記カソード端子の第２の端子の幅は、前記カソード端子の第３の端子の幅より狭く、
前記カソード端子の第２の端子と、前記カソード端子の第３の端子との間隔は、前記アノード端子の幅よりも広く、
前記アノード端子と、前記カソード端子の第１の端子との間隔は、前記カソード端子の第２の端子の幅よりも広い複数の光半導体装置が配置された光半導体モジュールであって、
前記光半導体装置の隣接するもの同士は、一方の前記光半導体装置の前記アノード端子と前記カソード端子の第１の端子と、他方の前記光半導体装置の前記カソード端子の第２の端子と前記カソード端子の第３の端子とが、互い噛み合うよう組み合わせて配置されていることを特徴とする光半導体モジュール。 A first terminal of an anode terminal and a cathode terminal extends from the envelope in a first direction,
A second terminal of the cathode terminal and a third terminal of the cathode terminal extend from the envelope in a second direction that is opposite to the first direction,
The width of the anode terminal is narrower than the width of the first terminal of the cathode terminal,
The width of the second terminal of the cathode terminal is narrower than the width of the third terminal of the cathode terminal,
The distance between the second terminal of the cathode terminal and the third terminal of the cathode terminal is wider than the width of the anode terminal,
An interval between the anode terminal and the first terminal of the cathode terminal is an optical semiconductor module in which a plurality of optical semiconductor devices wider than the width of the second terminal of the cathode terminal are arranged,
The adjacent ones of the optical semiconductor devices are the first terminal of the anode terminal and the cathode terminal of one optical semiconductor device, the second terminal of the cathode terminal of the other optical semiconductor device, and the cathode. An optical semiconductor module, wherein the third terminals of the terminals are arranged in combination so as to mesh with each other. 前記アノード端子は、前記外囲器の側壁の一方側に偏った位置から、前記カソード端子の第１の端子は、該側壁の他方側に偏った位置からそれぞれ延出し、前記カソード端子の第３の端子は、前記外囲器の側壁の一方側に偏った位置から、前記カソード端子の第２の端子は、該側壁の他方側に偏った位置からそれぞれ延出していることを特徴とする請求項１記載の光半導体モジュール。The anode terminal extends from a position biased to one side of the side wall of the envelope, and the first terminal of the cathode terminal extends from a position biased to the other side of the side wall, respectively. The second terminal of the cathode terminal extends from a position biased toward one side of the side wall of the envelope, and the second terminal of the cathode terminal extends from a position biased toward the other side of the side wall. Item 5. An optical semiconductor module according to Item 1. 前記カソード端子の第１の端子、第２の端子、第３の端子は、実装基板への実装に際して、全てが前記実装基板のカソード配線部に固定されることを特徴とする請求項２記載の光半導体モジュール。The first terminal, the second terminal, and the third terminal of the cathode terminal are all fixed to a cathode wiring portion of the mounting board when mounted on the mounting board. Optical semiconductor module. アノード端子、カソード端子を形成したリードフレームと、A lead frame formed with an anode terminal and a cathode terminal;
前記両端子を外部に延出させるようにして前記リードフレームに一体に形成した外囲器と、An envelope formed integrally with the lead frame so as to extend both terminals to the outside;
前記リードフレームに固着された光半導体素子を具備し、Comprising an optical semiconductor element fixed to the lead frame;
前記リードフレームは、The lead frame is
前記外囲器から第１の方向に、前記アノード端子と、前記カソード端子の第１の端子が延出し、In the first direction from the envelope, the anode terminal and the first terminal of the cathode terminal,
前記外囲器から前記第１の方向の逆方向である第２の方向に、前記カソード端子の第２の端子と、前記カソード端子の第３の端子が延出し、A second terminal of the cathode terminal and a third terminal of the cathode terminal extend from the envelope in a second direction that is opposite to the first direction,
前記アノード端子の幅は、前記カソード端子の第１の端子の幅より狭く、The width of the anode terminal is narrower than the width of the first terminal of the cathode terminal,
前記カソード端子の第２の端子の幅は、前記カソード端子の第３の端子の幅より狭く、The width of the second terminal of the cathode terminal is narrower than the width of the third terminal of the cathode terminal,
前記カソード端子の第２の端子と、前記カソード端子の第３の端子との間隔は、前記アノード端子の幅よりも広く、The distance between the second terminal of the cathode terminal and the third terminal of the cathode terminal is wider than the width of the anode terminal,
前記アノード端子と、前記カソード端子の第１の端子との間隔は、前記カソード端子の第２の端子の幅よりも広いことを特徴とする光半導体装置。The optical semiconductor device, wherein a distance between the anode terminal and the first terminal of the cathode terminal is wider than a width of the second terminal of the cathode terminal. 前記アノード端子は、前記外囲器の側壁の一方側に偏った位置から、前記カソード端子の第１の端子は、該側壁の他方側に偏った位置からそれぞれ延出し、前記カソード端子の第３の端子は、前記外囲器の側壁の一方側に偏った位置から、前記カソード端子の第２の端子は、該側壁の他方側に偏った位置からそれぞれ延出していることを特徴とする請求項４記載の光半導体装置。The anode terminal extends from a position biased to one side of the side wall of the envelope, and the first terminal of the cathode terminal extends from a position biased to the other side of the side wall, respectively. The second terminal of the cathode terminal extends from a position biased toward one side of the side wall of the envelope, and the second terminal of the cathode terminal extends from a position biased toward the other side of the side wall. Item 5. The optical semiconductor device according to Item 4.
JP2006050188A 2006-02-27 2006-02-27 Optical semiconductor module and optical semiconductor device Expired - Fee Related JP3974154B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006050188A JP3974154B2 (en) 2006-02-27 2006-02-27 Optical semiconductor module and optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006050188A JP3974154B2 (en) 2006-02-27 2006-02-27 Optical semiconductor module and optical semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002250534A Division JP3790199B2 (en) 2002-08-29 2002-08-29 Optical semiconductor device and optical semiconductor module

Publications (3)

Publication Number Publication Date
JP2006148169A JP2006148169A (en) 2006-06-08
JP2006148169A5 JP2006148169A5 (en) 2006-07-20
JP3974154B2 true JP3974154B2 (en) 2007-09-12

Family

ID=36627393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006050188A Expired - Fee Related JP3974154B2 (en) 2006-02-27 2006-02-27 Optical semiconductor module and optical semiconductor device

Country Status (1)

Country Link
JP (1) JP3974154B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5026848B2 (en) * 2007-04-19 2012-09-19 スタンレー電気株式会社 Optical semiconductor device and manufacturing method thereof
JP2009246343A (en) * 2008-03-11 2009-10-22 Rohm Co Ltd Semiconductor light-emitting apparatus and method of manufacturing the same
JP5212089B2 (en) * 2008-12-25 2013-06-19 豊田合成株式会社 LED light emitting device

Also Published As

Publication number Publication date
JP2006148169A (en) 2006-06-08

Similar Documents

Publication Publication Date Title
US9461225B2 (en) Light emitting device
KR101241650B1 (en) Package of light emitting diode
JP4432275B2 (en) Light source device
US10593846B2 (en) Semiconductor light-emitting device, method for producing same, and display device
CN1825586B (en) Led assembly and method of making the same
US20070235845A1 (en) Apparatus, system and method for use in mounting electronic elements
CN101569023A (en) Housing for an optoelectronic component and arrangement of the optoelectronic component in the housing
JP2007123777A (en) Semiconductor light emitting device
JP2005150624A (en) Lead frame for semiconductor device and surface light emitting device using it
JP3790199B2 (en) Optical semiconductor device and optical semiconductor module
JP2014060343A (en) Method of manufacturing light-emitting diode, light-emitting diode
JP3974154B2 (en) Optical semiconductor module and optical semiconductor device
CN101262036B (en) Light-emitting device
TWI531096B (en) Side-emitting type light emitting diode package structure and manufacturing method thereof
JP2007116078A (en) Light emitting device envelope
JP4340283B2 (en) Light emitting diode package, manufacturing method thereof, and light emitting diode using light emitting diode package
JP6064415B2 (en) Light emitting device
KR100634303B1 (en) Light emitting diode
KR101078032B1 (en) Side-emitting type light emitting device package and backlight module having same
US20130082293A1 (en) Led package device
JP6028443B2 (en) Light emitting device
JP6831624B2 (en) LED light emitting device
JP3130857U (en) Semiconductor element
KR100754884B1 (en) Light emitting device and manufacturing method thereof
KR100877550B1 (en) LED package using LED lead panel

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060227

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060420

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070612

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070613

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100622

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100622

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110622

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120622

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120622

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130622

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees