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JP3950950B2 - Manufacturing method of ceramic wiring board - Google Patents

Manufacturing method of ceramic wiring board Download PDF

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Publication number
JP3950950B2
JP3950950B2 JP2000153544A JP2000153544A JP3950950B2 JP 3950950 B2 JP3950950 B2 JP 3950950B2 JP 2000153544 A JP2000153544 A JP 2000153544A JP 2000153544 A JP2000153544 A JP 2000153544A JP 3950950 B2 JP3950950 B2 JP 3950950B2
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JP
Japan
Prior art keywords
ceramic
metallized
layer
wiring board
thick film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000153544A
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Japanese (ja)
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JP2001332822A (en
Inventor
定 加治佐
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Kyocera Corp
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Kyocera Corp
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Priority to JP2000153544A priority Critical patent/JP3950950B2/en
Publication of JP2001332822A publication Critical patent/JP2001332822A/en
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Publication of JP3950950B2 publication Critical patent/JP3950950B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

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  • Structure Of Printed Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem that the electrode of electronic parts cannot be connected to a metallized wiring layer appropriately due to occurrence of scratches and adhesion of foreign objects in the metallized wiring layer. SOLUTION: In this ceramic wiring board, a metallized wiring layer 2 where the electrode of electronic parts 3 is connected via conductive connection members 7 and 8 is deposited onto the upper and lower surfaces of a ceramic substrate 1 having nearly flat upper and lower surfaces, and at the same time a thick-film layer 9 that is thicker than the metallized wiring layer 2 being deposited on the surface is deposited, at least, at one of the upper and lower surfaces while being arranged to surround the center of the surface, at least, by three points on the thick-film layer 9. Placement is made with the side of the thick-film layer 9 facing down, scratches and adhesion of foreign objects to the metallized wiring layer 2 can be prevented.

Description

【0001】
【発明の属する技術分野】
本発明は、セラミック配線基板に関するものであり、より詳細には、平板状セラミック基体の上下両面に、それぞれに電子部品の電極が接続されるメタライズ配線層を被着させて成るセラミック配線基板に関するものである。
【0002】
【従来の技術】
従来、セラミック配線基板は、電気絶縁性や耐熱性に優れるとともに高密度配線が可能であることから、例えば半導体集積回路素子等の電子部品を実装するための配線基板として利用されている。このようなセラミック配線基板において、電子部品の実装密度を大とするために平板状のセラミック基体の上下両面にメタライズ配線層を被着させて成るセラミック配線基板が知られている。このようにセラミック基体の上下両面にメタライズ配線層を被着させたセラミック配線基板は、セラミック基体の上下両面にそれぞれ電子部品を搭載するとともに、その面に搭載された電子部品の電極とその面のメタライズ配線層とをボンディングワイヤや半田バンプ等の導電性接続部材を介して接続することにより、電子部品がその上下両面に実装される。
【0003】
なお、このようなセラミック配線基板においては、メタライズ配線層が酸化腐食するのを防止するとともに電子部品とメタライズ配線層との導電性接続部材を介した電気的な接続を良好なものとするために、メタライズ配線層の表面に通常であれば、ニッケルめっき層および金めっき層から成るめっき金属層を順次被着させている。
【0004】
また、このセラミック配線基板は、上下両面にメタライズ配線層用のメタライズペーストが所定のパターンに印刷塗布された平板状のセラミックグリーンシート積層体を焼成用の平坦な台板上に載置するとともにこれを高温で焼成することによって製作されている。
【0005】
【発明が解決しようとする課題】
しかしながら、この従来のセラミック配線基板によれば、メタライズ配線層が平板状のセラミック基体の上下両面に被着されていることから、このセラミック配線基板を例えば搬送用や保管用のトレイ等に載置すると、トレイ等の載置面に接する側のメタライズ配線層がこの載置面に擦れて、めっき金属層を含むメタライズ配線層の表面に傷が発生したり、載置面からの異物が付着してしまいやすい。あるいは、この従来のセラミック配線基板を製作する際に、セラミックグリーンシート積層体の上下両面にメタライズ配線層用のメタライズペーストが印刷塗布されていることから、焼成用の台板に載置される側のメタライズペーストと台板とが直接擦れてメタライズ配線層に傷が発生することがあった。そして、このようにメタライズ配線層に傷や異物があると、このセラミック配線基板の上下両面に電子部品を搭載するとともにこれらの電子部品の電極をメタライズ配線層に導電性接続部材を介して接続する際に、両者が良好に接続されず、そのため実装された電子部品を正常に作動させることができなくなる場合があるという問題点を有していた。
【0006】
本発明は、かかる従来の問題点に鑑み案出されたものであり、その目的は、セラミック基体の上下面に被着させたメタライズ配線層に傷や異物付着が発生することがなく、セラミック配線基板の上下両面に電子部品を搭載するとともにこれらの電子部品の電極をメタライズ配線層に導電性接続部材を介して接続する際に、電子部品の電極とメタライズ配線層とが導電性接続部材を介して良好に接続され、それにより実装された電子部品を常に正常に作動させることが可能なセラミック配線基板を提供することにある。
【0007】
【課題を解決するための手段】
本発明のセラミック配線基板の製造方法は、略平坦な上下面を有するセラミック基体の前記上下両面にそれぞれ電子部品の電極が導電性接続部材を介して接続されるメタライズ配線層を被着させるとともに、前記上下面の少なくとも一方に、該面に被着された前記メタライズ配線層よりも厚く、且つ該面に搭載される電子部品よりも薄い厚膜層を、該厚膜層上の少なくとも3点でその面の中心を囲むように配置して被着させて成るセラミック配線基板の製造方法であって、前記セラミック配線基板となるセラミックグリーンシート積層体が、焼成用の台板に前記厚膜層側を下にして載置された状態にて焼成されたことを特徴とする。
また、前記厚膜層は、平面視で矩形状をなす前記セラミック配線基板の外周領域及び、該外周領域よりも内側の領域に、それぞれ設けられていることを特徴とする。
本発明の電子装置は、上記製造方法により得られた前記セラミック配線基板に、電子部品を搭載したことを特徴する。
【0008】
本発明のセラミック配線基板によれば、セラミック基体の上下面の少なくとも一方に、メタライズ配線層よりも厚い厚膜層を、そのうちの少なくとも3点でその面の中心を囲むように配置して被着させていることから、このセラミック配線基板をトレイ等に載置する際やこのセラミック配線基板の製作時にセラミック配線基板用のセラミックグリーンシート積層体を焼成用の台板に載置する際に、厚膜層側の面を下にして載置することにより、この面に被着されたメタライズ配線層が載置面に擦れることを防止できる。
【0009】
【発明の実施の形態】
次に、本発明を添付の図面を基に詳細に説明する。図1は、本発明のセラミック配線基板の実施の形態の一例を示す断面図であり、1はセラミック基体、2はメタライズ配線層である。
【0010】
セラミック基体1は、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体・ムライト質焼結体・炭化珪素質焼結体・窒化珪素質焼結体・ガラス−セラミックス等のセラミックス材料から成り、略平坦な上下面を有する一辺の長さが10〜200mm程度で、厚みが1〜10mm程度の略四角平板状である。セラミック基体1は、電子部品を支持するための支持部材として機能し、その上下両面の中央部には電子部品を搭載するための複数の搭載部が形成されており、これらの搭載部には半導体集積回路素子等の電子部品3がそれぞれ搭載される。
【0011】
このようなセラミック基体1は、例えば酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウム・酸化珪素・酸化マグネシウム・酸化カルシウム等のセラミック原料粉末に適当な有機バインダ・溶剤・可塑剤・分散剤等を添加混合して泥漿状となすとともに、これを従来周知のドクタブレード法を採用してシート状となすことにより複数枚のセラミックグリーンシートを準備し、次にこれらのセラミックグリーンシートに適当な打ち抜き加工を施すとともに後述するメタライズ配線層2・メタライズビア柱4・メタライズダイアタッチ層5・メタライズシール層6用のメタライズペーストおよび厚膜層9用の厚膜ペーストを印刷塗布し、これらのセラミックグリーンシートを上下に積層してセラミックグリーンシート積層体を得た後、このセラミックグリーンシート積層体を厚膜層9用の厚膜ペーストが塗布された面を下にして焼成用の台板に載置するとともに約1600℃の温度で焼成することにより製作される。
【0012】
また、セラミック基体1には、タングステンやモリブデン・銅・銀等の金属粉末メタライズから成るメタライズ配線層2・メタライズビア柱4・メタライズダイアタッチ層5・メタライズシール層6等の複数のメタライズ導体が固着されている。
【0013】
メタライズ配線層2は、厚みが10〜20μm程度であり、セラミック基体1の上下面および内部に多数のパターンで配設されており、各パターンはセラミック基体1の内部に設けたメタライズビア柱4により所定のもの同士が電気的に接続されることによりセラミック基体1の搭載部またはその周辺部から下面外周部にかけて電気的に導出されている。これらのメタライズ配線層2およびメタライズビア柱4は、セラミック基体1の各搭載部に搭載された電子部品3同士を電気的に相互に接続するとともに外部に電気的に接続するための導電路として機能し、メタライズ配線層2の搭載部またはその周辺部位には、電子部品3の電極がボンディングワイヤ7や半田バンプ8等の導電性接続部材を介して電気的に接続され、メタライズ配線層2のセラミック基体1下面外周部に導出した部位には例えば外部電気回路基板に接続されたソケットの端子が電気的に接続される。
【0014】
また、メタライズダイアタッチ層5は、セラミック基体1上面の各搭載部に、この面に被着されたメタライズ配線層2と実質的に同じ厚みに被着されており、セラミック基体1上面の搭載部に電子部品3を搭載するための下地金属として機能する。そして、セラミック基体1の上面に搭載される電子部品3は、このメタライズダイアタッチ層5に金−シリコンろう材等の導電性接合材料を介して接合される。なお、この例では、セラミック基体1下面の搭載部にはメタライズダイアタッチ層5は被着されておらず、下面に搭載される電子部品3は、バンプ8によって固定される。
【0015】
さらに、メタライズシール層6は、セラミック基体1の上面外周部に、この面に被着されたメタライズ配線層2と実質的に同じ厚みに枠状に被着されており、セラミック基体1上面に図示しない椀状の蓋体を接合するための下地金属として機能する。そして、このメタライズシール層6に例えば金−錫合金から成る封止材を介して椀状の蓋体を接合することにより、セラミック基体1の上面に搭載する電子部品3が気密に封止される。なお、この例では、セラミック基体1の下面にメタライズシール層6は被着されておらず、セラミック基体1の下面に搭載される電子部品3は例えばエポキシ樹脂等の熱硬化性樹脂から成る図示しない樹脂製封止材により封止される。
【0016】
このようなメタライズ配線層2・メタライズビア柱4・メタライズダイアタッチ層5・メタライズシール層6は、例えばタングステンメタライズから成る場合であれば、タングステン粉末に適当な有機バインダ・溶剤・可塑材・分散剤等を添加混合して適当な粘度に調整したメタライズペーストを、セラミック基体1用の各セラミックグリーンシートに従来周知のスクリーン印刷法を採用して12〜25μmの厚みの所定のパターンおよびセラミックグリーンシートを貫通する直径が50〜300μm程度の所定の円柱状に印刷塗布し、これをセラミック基体1用のセラミックグリーンシート積層体とともに焼成することによってセラミック基体1の上下面および内部に配設される。
【0017】
なお、メタライズ配線層2・メタライズダイアタッチ層5・メタライズシール層6の露出表面には、これらのメタライズ導体が酸化腐食するのを防止するとともにメタライズ配線層2とボンディングワイヤ7・半田バンプ8・ソケットとの接続およびメタライズダイアタッチ層5と電子部品との接合およびメタライズシール層6と蓋体との接合を良好なものとするために、通常であれば、厚みが1〜10μm程度のニッケルめっき層および厚みが0.1〜3μm程度の金めっき層が被着されている。
【0018】
さらに、セラミック基体1の上面には、この上面に被着されたメタライズ配線層2よりも10〜50μm程度厚い厚膜層9が被着されている。厚膜層9は、例えばセラミック基体1と実質的に同質のセラミックス材料から成り、図2に上面図で示すように、そのうちの少なくとも3点でその面の中心を囲むように、セラミック基体1の外周部および中央部に略長方形のパターンで複数個が分散して被着されている。厚膜層9は、セラミック配線基板をトレイ等の載置面に載置する際に、これらの厚膜層9が載置面に接触する載置接触面となってメタライズ配線層2が載置面に直接接触するのを防止する作用を為し、そのうちの少なくとも3点でその面の中心を囲むように被着されていることから、本発明のセラミック配線基板を例えば搬送用のトレイ等の載置面に載置する際に、この厚膜層9が被着された面を載置面側にして載置することにより、セラミック基体1の上下面に被着させたメタライズ配線層2をトレイ等の載置面に直接接触させることなく載置させることができる。したがって、本発明のセラミック配線基板によれば、メタライズ配線層2にトレイ等の載置面との擦れによる傷や異物の付着が発生することを有効に防止することができ、その結果、上下面に搭載される各電子部品3の電極とメタライズ配線層2とをボンディングワイヤ7や半田バンプ8等の導電性接続部材を介して極めて良好に接続させることができる。
【0019】
なお、厚膜層9は、その厚みがメタライズ配線層2の厚みよりも10μm未満厚い場合には、本発明のセラミック配線基板を厚膜層9側を下にしてトレイ等の載置面に載置した場合に、載置面とメタライズ配線層2との間に僅かな隙間しか形成されず、そのため、載置面とメタライズ配線層2とが接触する危険性が大きなものとなり、他方、その厚みがメタライズ配線層2の厚みよりも50μmを超えて厚いと、メタライズ配線層2に電子部品3の電極をボンディングワイヤ7や半田バンプ8等の導電性接続部材を介して接続する際にその接続の障害となる危険性が大きなものとなる。したがって、厚膜層9の厚みは、これが被着された面のメタライズ配線層2の厚みよりも10〜50μm厚いことが好ましい。また、厚膜層9をセラミック基体1と実質的に同一の材料で形成しておくと、厚膜層9とセラミック基体1とが強固に接合し、厚膜層9がセラミック基体1から剥離することを有効に防止することができる。したがって、厚膜層9は、セラミック基体1と実質的に同一の材料で形成しておくことが好ましい。
【0020】
このような厚膜層9は、例えばセラミック基体1用のセラミックグリーンシートに含まれるセラミック原料粉末と実質的に同一の原料粉末に適当な有機バインダ・溶剤等を添加混合して得た厚膜ペーストをセラミック基体1用のセラミックグリーンシートに従来周知のスクリーン印刷法を採用してメタライズ配線層2用のメタライズペーストよりも厚い所定のパターンに印刷塗布し、これをセラミック基体1用のセラミックグリーンシート積層体とともに焼成することによってセラミック基体1の上面に所定の配置で被着される。このとき、厚膜層9用の厚膜ペーストが塗布された側の面を焼成用の台板側にして焼成することにより、導電ペーストが台板に接触することがなくなり、そのため焼成の際にメタライズ配線層2に傷が発生するのが有効に防止される。
【0021】
かくして、本発明のセラミック配線基板によれば、メタライズ配線層2に傷や付着が発生することがなく、各電子部品3の電極をメタライズ配線層2に良好に接続させることができ、搭載する電子部品3を正常に作動させることができる。
【0022】
なお、本発明は、上述の実施の形態例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であり、例えば上述の実施の形態例では、厚膜層9はセラミック基体1の上面に形成されていたが、厚膜層9はセラミック基体1の下面に形成されていてもよい。この場合、厚膜層9が被着された下面側を下にしてトレイ等の載置面に載置すればよい。
【0023】
また、上述の実施の形態の一例では、厚膜層9は、そのうちの少なくとも3点でその面の中心を囲むように略長方形のパターンをセラミック基体1の外周部および中央部に複数個分散させて被着されていたが、厚膜層9は、そのうちの少なくとも3点でその面の中心を囲むように配置されて被着されていれば、正方形や円形等、他の形状のパターンを中央部や外周部に複数個分散させて被着されていても良く、さらには、セラミック基体1の中央部を取り囲む枠状のパターンに被着されていてもよい。
【0024】
またさらに、上述の実施の形態例では、厚膜層9はセラミック基体1と実質的に同一の材料から形成されていたが、厚膜層9は、例えばメタライズ金属層等、セラミック基体1と異なる材料から形成されていても良い。
【0025】
【発明の効果】
本発明のセラミック配線基板によれば、セラミック基体の上下面の少なくとも一方に、メタライズ配線層よりも厚い厚膜層を、そのうちの少なくとも3点でその面の中心を囲むように配置して被着されているいることから、このセラミック配線基板をトレイ等に載置する際やこのセラミック配線基板の製作時にセラミック配線基板用のセラミックグリーンシート積層体を焼成用の台板に載置する際に、厚膜層側の面を下にして載置することにより、この面に被着されたメタライズ配線層が載置面に擦れることを防止でき、その結果、メタライズ配線層に傷や異物の付着がなく、搭載する電子部品の各電極をメタライズ配線層に導電性接続部材を介して良好に接続して電子部品を常に正常に作動させることが可能なセラミック配線基板を提供することができる。
【図面の簡単な説明】
【図1】本発明のセラミック配線基板の実施の形態の一例を示す断面図である。
【図2】図1に示すセラミック配線基板の電子部品3およびボンディングワイヤ7を除いた上面図である。
【符号の説明】
1・・・・・セラミック基体
2・・・・・メタライズ配線層
3・・・・・電子部品
7・・・・・導電性接続部材としてのボンディングワイヤ
8・・・・・導電性接続部材としての半田バンプ
9・・・・・厚膜層
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a ceramic wiring board, and more particularly to a ceramic wiring board in which metallized wiring layers to which electrodes of electronic components are respectively attached are attached to upper and lower surfaces of a flat ceramic substrate. It is.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, ceramic wiring boards are used as wiring boards for mounting electronic components such as semiconductor integrated circuit elements, for example, because they are excellent in electrical insulation and heat resistance and enable high-density wiring. In such a ceramic wiring board, there is known a ceramic wiring board in which metallized wiring layers are deposited on both upper and lower surfaces of a flat ceramic substrate in order to increase the mounting density of electronic components. In this manner, the ceramic wiring board having the metallized wiring layers deposited on both the upper and lower surfaces of the ceramic substrate has electronic components mounted on the upper and lower surfaces of the ceramic substrate, and the electrodes of the electronic components mounted on the surface and the surface of the surface. By connecting the metallized wiring layer via a conductive connecting member such as a bonding wire or a solder bump, the electronic components are mounted on both upper and lower surfaces.
[0003]
In such a ceramic wiring board, the metallized wiring layer is prevented from being oxidized and corroded, and the electrical connection between the electronic component and the metallized wiring layer through the conductive connecting member is made favorable. Normally, a plated metal layer composed of a nickel plating layer and a gold plating layer is sequentially deposited on the surface of the metallized wiring layer.
[0004]
In addition, this ceramic wiring board is configured by placing a flat ceramic green sheet laminate on which metalized paste for a metallized wiring layer is applied in a predetermined pattern on both upper and lower surfaces on a flat base plate for firing. Is manufactured by baking at a high temperature.
[0005]
[Problems to be solved by the invention]
However, according to this conventional ceramic wiring board, since the metallized wiring layers are attached to the upper and lower surfaces of the flat ceramic substrate, the ceramic wiring board is placed on a tray for transportation or storage, for example. Then, the metallized wiring layer on the side in contact with the mounting surface such as a tray is rubbed against the mounting surface, and the surface of the metallized wiring layer including the plated metal layer is scratched or foreign matter from the mounting surface adheres. It is easy to end up. Alternatively, when this conventional ceramic wiring board is manufactured, the metalized paste for the metalized wiring layer is printed and applied on both the upper and lower surfaces of the ceramic green sheet laminate, so that it is placed on the base plate for firing. In some cases, the metallized paste and the base plate were directly rubbed and scratched on the metallized wiring layer. If there are scratches or foreign objects on the metallized wiring layer in this way, electronic components are mounted on both the upper and lower surfaces of the ceramic wiring board and the electrodes of these electronic components are connected to the metallized wiring layer via a conductive connection member. However, there is a problem in that the two are not connected well, and thus the mounted electronic component may not be operated normally.
[0006]
The present invention has been devised in view of such conventional problems. The object of the present invention is to prevent the occurrence of scratches and foreign matter adhesion on the metallized wiring layers deposited on the upper and lower surfaces of the ceramic substrate. When electronic components are mounted on both the upper and lower surfaces of the substrate and the electrodes of these electronic components are connected to the metallized wiring layer via the conductive connection member, the electrodes of the electronic component and the metallized wiring layer are interposed via the conductive connection member. It is an object of the present invention to provide a ceramic wiring board that can be connected well and can always operate a mounted electronic component normally.
[0007]
[Means for Solving the Problems]
The method for manufacturing a ceramic wiring board according to the present invention includes depositing a metallized wiring layer in which electrodes of an electronic component are respectively connected to the upper and lower surfaces of a ceramic substrate having substantially flat upper and lower surfaces through a conductive connecting member, at least one of the upper and lower surfaces, rather thick than the metallized wiring layer deposited on said surface, and a thick film layer has thin than electronic components mounted on said surface, at least 3 on the thick film layer A method of manufacturing a ceramic wiring board, which is disposed so as to surround the center of the surface at a point, and the ceramic green sheet laminate to be the ceramic wiring board is attached to the base plate for firing on the thick film It is characterized by being fired in a state of being placed with the layer side down.
Further, the thick film layer is provided in an outer peripheral region of the ceramic wiring board having a rectangular shape in plan view and an inner region from the outer peripheral region.
The electronic device according to the present invention is characterized in that an electronic component is mounted on the ceramic wiring board obtained by the above manufacturing method.
[0008]
According to the ceramic wiring board of the present invention, a thick film layer thicker than the metallized wiring layer is disposed on at least one of the upper and lower surfaces of the ceramic substrate so as to surround the center of the surface at at least three of them. Therefore, when the ceramic wiring board is placed on a tray or the like, or when the ceramic green sheet laminate for the ceramic wiring board is placed on the baking base plate when the ceramic wiring board is manufactured, By placing the film layer side down, it is possible to prevent the metallized wiring layer deposited on this surface from rubbing against the placement surface.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing an example of an embodiment of a ceramic wiring board according to the present invention, wherein 1 is a ceramic substrate and 2 is a metallized wiring layer.
[0010]
The ceramic substrate 1 is made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a silicon carbide sintered body, a silicon nitride sintered body, or a glass-ceramic. It is a substantially rectangular flat plate having a flat top and bottom surface with a side length of about 10 to 200 mm and a thickness of about 1 to 10 mm. The ceramic substrate 1 functions as a support member for supporting the electronic component, and a plurality of mounting portions for mounting the electronic component are formed at the center of the upper and lower surfaces, and these mounting portions are provided with a semiconductor. Electronic parts 3 such as integrated circuit elements are mounted.
[0011]
If such a ceramic substrate 1 is made of, for example, an aluminum oxide sintered body, an organic binder, solvent, plasticizer, and dispersion suitable for ceramic raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide are used. Add and mix the agent to make a mud-like shape, and prepare a plurality of ceramic green sheets by adopting the conventional doctor blade method to make a sheet-like shape, then suitable for these ceramic green sheets The metallized paste for the metallized wiring layer 2, the metallized via pillar 4, the metallized die attach layer 5, the metallized seal layer 6 and the thick film paste for the thick film layer 9, which will be described later, are printed and applied, and these ceramics Stack green sheets up and down to obtain a ceramic green sheet laminate Thereafter, this ceramic green sheet laminate is mounted on a firing base plate with the surface coated with the thick film paste for the thick film layer 9 facing down, and is fired at a temperature of about 1600 ° C. .
[0012]
Further, a plurality of metallized conductors such as a metallized wiring layer 2, a metallized via pillar 4, a metallized die attach layer 5, and a metallized seal layer 6 made of metal powder metallized such as tungsten, molybdenum, copper, or silver are fixed to the ceramic substrate 1. Has been.
[0013]
The metallized wiring layer 2 has a thickness of about 10 to 20 μm and is arranged in a number of patterns on the upper and lower surfaces and inside of the ceramic substrate 1. Each pattern is formed by metallized via pillars 4 provided inside the ceramic substrate 1. The predetermined ones are electrically connected to each other so as to be electrically derived from the mounting portion of the ceramic substrate 1 or its peripheral portion to the outer peripheral portion of the lower surface. These metallized wiring layers 2 and metallized via pillars 4 function as conductive paths for electrically connecting electronic components 3 mounted on each mounting portion of the ceramic substrate 1 to each other and electrically connecting to the outside. Then, the electrode of the electronic component 3 is electrically connected to the mounting portion of the metallized wiring layer 2 or its peripheral portion via a conductive connecting member such as a bonding wire 7 or a solder bump 8, and the ceramic of the metallized wiring layer 2. For example, a socket terminal connected to an external electric circuit board is electrically connected to a portion led out to the outer peripheral portion of the lower surface of the base 1.
[0014]
Further, the metallized die attach layer 5 is attached to each mounting part on the upper surface of the ceramic substrate 1 so as to have substantially the same thickness as the metallized wiring layer 2 applied to this surface. It functions as a base metal for mounting the electronic component 3 on. The electronic component 3 mounted on the upper surface of the ceramic substrate 1 is bonded to the metallized die attach layer 5 via a conductive bonding material such as a gold-silicon brazing material. In this example, the metallized die attach layer 5 is not attached to the mounting portion on the lower surface of the ceramic substrate 1, and the electronic component 3 mounted on the lower surface is fixed by the bumps 8.
[0015]
Further, the metallized seal layer 6 is applied to the outer peripheral portion of the upper surface of the ceramic substrate 1 in a frame shape with substantially the same thickness as the metallized wiring layer 2 applied to this surface. It functions as a base metal for joining the bowl-shaped lids that do not. And the electronic component 3 mounted on the upper surface of the ceramic base | substrate 1 is airtightly sealed by joining a bowl-shaped cover body to this metallized seal layer 6 via the sealing material which consists of gold-tin alloys, for example. . In this example, the metallized seal layer 6 is not attached to the lower surface of the ceramic substrate 1, and the electronic component 3 mounted on the lower surface of the ceramic substrate 1 is not shown, which is made of a thermosetting resin such as an epoxy resin. It is sealed with a resin sealing material.
[0016]
If the metallized wiring layer 2, metallized via pillar 4, metallized die attach layer 5, and metallized seal layer 6 are made of, for example, tungsten metallized, an organic binder, solvent, plasticizer, and dispersant suitable for tungsten powder are used. A metallized paste adjusted to an appropriate viscosity by adding, etc., is applied to each ceramic green sheet for the ceramic substrate 1 using a conventionally known screen printing method to form a predetermined pattern having a thickness of 12 to 25 μm and the ceramic green sheet. A predetermined cylindrical shape having a penetrating diameter of about 50 to 300 μm is printed and applied, and fired together with a ceramic green sheet laminate for the ceramic substrate 1 to be disposed on the upper and lower surfaces and inside of the ceramic substrate 1.
[0017]
The exposed surfaces of the metallized wiring layer 2, the metallized die attach layer 5, and the metallized seal layer 6 prevent the metallized conductor from being oxidized and corroded, and the metallized wiring layer 2, the bonding wire 7, the solder bump 8, and the socket. In general, a nickel plating layer having a thickness of about 1 to 10 μm is used to improve the connection between the metallized die attach layer 5 and the electronic component and the metallized seal layer 6 and the lid. A gold plating layer having a thickness of about 0.1 to 3 μm is applied.
[0018]
Further, on the upper surface of the ceramic substrate 1, a thick film layer 9 thicker than the metallized wiring layer 2 deposited on the upper surface is deposited by about 10 to 50 μm. The thick film layer 9 is made of, for example, a ceramic material substantially the same as that of the ceramic substrate 1, and as shown in a top view in FIG. 2, the thick film layer 9 surrounds the center of the surface at at least three points. A plurality of a plurality of rectangular patterns are deposited on the outer peripheral portion and the central portion. When the ceramic wiring board is placed on a placement surface such as a tray, the thick film layer 9 serves as a placement contact surface in contact with the placement surface, and the metallized wiring layer 2 is placed thereon. Since it is attached so as to surround the center of the surface at least three of them, the ceramic wiring board of the present invention is attached to, for example, a transport tray or the like. When placing on the placement surface, the metallized wiring layer 2 deposited on the upper and lower surfaces of the ceramic substrate 1 is placed by placing the surface on which the thick film layer 9 is deposited on the placement surface side. It can be placed without directly contacting the placing surface such as a tray. Therefore, according to the ceramic wiring board of the present invention, it is possible to effectively prevent the metallized wiring layer 2 from being scratched by the rubbing surface such as the tray or the like and from being attached with foreign matters. It is possible to connect the electrodes of the electronic components 3 mounted on the metallized wiring layer 2 and the metallized wiring layer 2 very well via conductive connection members such as bonding wires 7 and solder bumps 8.
[0019]
When the thickness of the thick film layer 9 is less than 10 μm thicker than the thickness of the metallized wiring layer 2, the ceramic wiring board of the present invention is mounted on a mounting surface such as a tray with the thick film layer 9 side down. When placed, only a slight gap is formed between the placement surface and the metallized wiring layer 2, which increases the risk of contact between the placement surface and the metallized wiring layer 2. Is more than 50 μm thicker than the thickness of the metallized wiring layer 2, the connection of the electrode of the electronic component 3 to the metallized wiring layer 2 through a conductive connection member such as a bonding wire 7 or a solder bump 8 is performed. There is a greater risk of obstacles. Accordingly, the thickness of the thick film layer 9 is preferably 10 to 50 μm thicker than the thickness of the metallized wiring layer 2 on the surface on which the thick film layer 9 is deposited. If the thick film layer 9 is formed of substantially the same material as the ceramic substrate 1, the thick film layer 9 and the ceramic substrate 1 are firmly bonded, and the thick film layer 9 is peeled off from the ceramic substrate 1. This can be effectively prevented. Therefore, the thick film layer 9 is preferably formed of substantially the same material as that of the ceramic substrate 1.
[0020]
Such a thick film layer 9 is, for example, a thick film paste obtained by adding and mixing an appropriate organic binder, solvent, etc. to the raw material powder substantially the same as the ceramic raw material powder contained in the ceramic green sheet for the ceramic substrate 1. Is applied to a ceramic green sheet for the ceramic substrate 1 in a predetermined pattern which is thicker than the metallized paste for the metallized wiring layer 2 by adopting a conventionally known screen printing method, and this is laminated on the ceramic green sheet for the ceramic substrate 1 By firing together with the body, it is deposited on the upper surface of the ceramic substrate 1 in a predetermined arrangement. At this time, the conductive paste is not brought into contact with the base plate by firing the surface on which the thick film paste for the thick film layer 9 is applied, so that the conductive paste does not contact the base plate. It is possible to effectively prevent the metallized wiring layer 2 from being damaged.
[0021]
Thus, according to the ceramic wiring board of the present invention, the metallized wiring layer 2 is not damaged or attached, and the electrodes of the respective electronic components 3 can be satisfactorily connected to the metallized wiring layer 2, and the mounted electronic The component 3 can be operated normally.
[0022]
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described embodiment, a thick film is used. Although the layer 9 is formed on the upper surface of the ceramic substrate 1, the thick film layer 9 may be formed on the lower surface of the ceramic substrate 1. In this case, it may be placed on a placing surface such as a tray with the lower surface side to which the thick film layer 9 is attached facing down.
[0023]
In the example of the embodiment described above, the thick film layer 9 has a plurality of substantially rectangular patterns dispersed in the outer peripheral portion and the central portion of the ceramic substrate 1 so as to surround the center of the surface at at least three of them. However, if the thick film layer 9 is disposed so as to surround the center of the surface at at least three of the thick film layers 9, the pattern of another shape such as a square or a circle is centered. A plurality of the outer peripheral portions and the outer peripheral portion may be dispersed and attached, or may be attached to a frame-like pattern surrounding the central portion of the ceramic substrate 1.
[0024]
Furthermore, in the above-described embodiment, the thick film layer 9 is formed of substantially the same material as the ceramic base 1, but the thick film layer 9 is different from the ceramic base 1 such as a metallized metal layer. It may be formed from a material.
[0025]
【The invention's effect】
According to the ceramic wiring board of the present invention, a thick film layer thicker than the metallized wiring layer is disposed on at least one of the upper and lower surfaces of the ceramic substrate so as to surround the center of the surface at at least three of them. Therefore, when placing this ceramic wiring board on a tray or the like, or when placing a ceramic green sheet laminate for a ceramic wiring board on a base plate for firing during the production of this ceramic wiring board, By placing the thick film layer side down, it is possible to prevent the metallized wiring layer deposited on this surface from rubbing against the placement surface, and as a result, scratches and foreign matter adhere to the metallized wiring layer. There is provided a ceramic wiring board in which each electrode of an electronic component to be mounted can be satisfactorily connected to a metallized wiring layer via a conductive connecting member so that the electronic component can always operate normally. It is possible.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a ceramic wiring board according to the present invention.
2 is a top view of the ceramic wiring board shown in FIG. 1 excluding electronic components 3 and bonding wires 7. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Metallized wiring layer 3 ... Electronic component 7 ... Bonding wire 8 as a conductive connection member ... As a conductive connection member Solder bump 9 thick layer

Claims (3)

略平坦な上下面を有するセラミック基体の前記上下両面にそれぞれ電子部品の電極が導電性接続部材を介して接続されるメタライズ配線層を被着させるとともに、前記上下面の少なくとも一方に、該面に被着された前記メタライズ配線層よりも厚く、且つ該面に搭載される電子部品よりも薄い厚膜層を、該厚膜層上の少なくとも3点でその面の中心を囲むように配置して被着させて成るセラミック配線基板の製造方法であって、
前記セラミック配線基板となるセラミックグリーンシート積層体が、焼成用の台板に前記厚膜層側を下にして載置された状態にて焼成されたことを特徴とするセラミック配線基板の製造方法。
A metallized wiring layer in which electrodes of electronic components are respectively connected to the upper and lower surfaces of the ceramic base having a substantially flat upper and lower surface via a conductive connection member is attached to at least one of the upper and lower surfaces. rather thickness than the metallized wiring layer is deposited, and a thick film layer has thin than electronic components mounted on said surface, arranged so as to surround the center of the surface at least three points on the thick film layer A method of manufacturing a ceramic wiring board formed by applying
A method for producing a ceramic wiring board, wherein the ceramic green sheet laminate as the ceramic wiring board is fired in a state of being placed on a base plate for firing with the thick film layer side down.
前記厚膜層は、平面視で矩形状をなす前記セラミック配線基板の外周領域及び、該外周領域よりも内側の領域に、それぞれ設けられていることを特徴とする請求項1記載のセラミック配線基板の製造方法。  2. The ceramic wiring board according to claim 1, wherein the thick film layer is provided in an outer peripheral area of the ceramic wiring board having a rectangular shape in a plan view and an inner area of the outer peripheral area. Manufacturing method. 請求項1または請求項2に記載の製造方法により得られた前記セラミック配線基板に、電子部品を搭載したことを特徴する電子装置。An electronic device in which an electronic component is mounted on the ceramic wiring board obtained by the manufacturing method according to claim 1.
JP2000153544A 2000-05-24 2000-05-24 Manufacturing method of ceramic wiring board Expired - Fee Related JP3950950B2 (en)

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