JP3949815B2 - Resist film peeling method and peeling apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resist film having a predetermined pattern formed on the main surface of various substrates such as a flat panel display (FPD) substrate such as a substrate for a liquid crystal display device, a glass substrate for a photomask, and a semiconductor substrate. TECHNICAL FIELD The present invention relates to a method and an apparatus for peeling from a sheet.
[0002]
[Prior art]
For example, in the manufacturing process of a liquid crystal display device, fine elements are formed by repeating the formation and patterning of a thin film on the surface of a glass substrate. The patterning of the thin film is achieved by patterning a resist film on the thin film to be etched by a photolithography process and etching the thin film in that state. In this etching process, dry etching is applied as necessary.
[0003]
[Problems to be solved by the invention]
However, the dry etching causes the surface layer portion of the resist film to be altered and hardened, which makes it difficult to remove the resist film in the next step. Specifically, when the resist film is peeled off by supplying a stripping solution onto the substrate, the altered part of the resist film remains as a residue, or the stripping process with the stripping solution takes a long time to produce The improvement of sex was hindered.
[0004]
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a resist film peeling method and a peeling apparatus that can solve the above-described technical problems and can satisfactorily peel the resist film.
[0005]
[Means for Solving the Problems and Effects of the Invention]
The invention according to claim 1 for achieving the above object is a method for stripping a resist film formed on a main surface of a substrate, wherein ozone water is supplied to the main surface of the substrate. When, viewed contains a stripping solution supply step of supplying a predetermined stripping solution to the main surface of the substrate after the ozone water is supplied, the ozone water supplying step, to cleave molecular bonds of the resist film by ozone water In the resist film peeling method, the stripping solution supplying step is a step of stripping the resist film whose molecular bond is cleaved in the ozone water supplying step from the substrate with the stripping solution. is there. The resist film may be a resist film after dry etching is performed (Claim 2).
[0006]
Ozone reacts with organic substances to quickly cleave unsaturated double bonds and aromatic rings. Therefore, in the present invention, ozone water is supplied to the main surface of the substrate when the resist film is peeled off. As a result, for example, the surface layer portion of the resist film that has been altered due to dry etching and the residue generated by dry etching can be decomposed and softened. And then, the resist film can be effectively peeled from the main surface of the substrate by supplying the stripping solution to the main surface of the substrate.
[0009]
The invention according to claim 3 is a resist film peeling apparatus for peeling the resist film formed on the main surface of the substrate, the ozone water supply means for supplying ozone water to the main surface of the substrate, and the ozone water supply look containing a stripping solution supply means for supplying a predetermined stripping solution to the main surface of the substrate where ozone water is supplied by means resist film whose molecular bond is cleaved by ozone water supplied from the ozone water supplying means In addition, the resist film peeling apparatus is characterized in that a stripping liquid is supplied from the stripping liquid supply means to strip the resist film. The resist film may be a resist film after a dry etching process is performed (claim 4).
[0010]
According to the present invention, an effect similar to that of the first aspect of the invention can be achieved.
The invention according to claim 5 further includes transport means for transporting the substrate horizontally with its main surface facing upward, and ozone water is supplied to the substrate transported by the transport means by the ozone water supply means. 5. The resist film stripping apparatus according to claim 3, wherein the stripping solution is supplied by the stripping solution supplying means after being supplied.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a simplified cross-sectional view for explaining the configuration of a resist film peeling apparatus according to an embodiment of the present invention. This resist film peeling apparatus is, for example, processing liquid on the main surface (upper surface in FIG. 1) of the substrate S while successively transporting the substrate S such as a glass substrate for a liquid crystal display device in a substantially horizontal transport direction TD. Is a device for sequentially removing the resist films respectively formed on the main surfaces of the plurality of substrates S. The resist film is, for example, a resist film after dry etching is performed.
[0013]
In order to realize such a function, this resist film peeling apparatus combines an inlet conveyor 1, a peeling tank 2, a washing tank 3 and an outlet conveyor 4 in order from the upstream side in the transport direction TD along the transport direction TD. Configured. Each of the inlet conveyor 1, the peeling tank 2, the water washing tank 3, and the outlet conveyor 4 includes a plurality of conveying rollers 11, 21, 31, and 41 arranged along a horizontal plane in a mutually parallel positional relationship. Then, unprocessed substrates S are placed one after another on the transport rollers 11 of the entrance conveyor 1 by a substrate transport robot (not shown), and are delivered onto the transport rollers 41 of the exit conveyor 4 by a substrate transport robot (not shown). The processed substrates S are removed one after another. The transport rollers 11, 21, 31, and 41 are configured to rotate around their respective axes by obtaining rotational force from the transport roller driving units 12, 22, 32, and 42, respectively.
[0014]
Each operation of the transport roller driving units 12, 22, 32, 42 is controlled by the control device 5. Thereby, for example, the transport rollers 11, 21 and 31 of the entrance conveyor 1, the separation tank 2 and the washing tank 3 are rotated in order to transport the substrate S in the transport direction TD, or the transport direction TD is the substrate S. Or reverse to reverse. Thereby, the substrate S is swung in the entrance conveyor 1, in the peeling tank 2, and in the washing tank 3, and the processing in each of these processing units is performed uniformly over the entire area of the substrate S, In addition, sufficient processing time required for each process can be secured without increasing the length of the conveyance path of each processing unit. Since the exit conveyor 4 simply performs the process of dispensing the substrate S, the control device 5 controls the driving / stopping of the transport rollers 41 of the exit conveyor 4.
[0015]
The inlet conveyor 1 includes an ozone water nozzle 13 (ozone water supply means) above the transport roller 11. The ozone water nozzle 13 is for supplying ozone water to the main surface of the substrate S. The ozone water stored in the ozone water tank 14 is pumped out to the ozone water nozzle 13 by a pump 15 and supplied from an ozone water supply pipe 17 through an air valve 16. The air valve 16 is controlled to be opened and closed by the control device 5. The ozone water after being used for the processing of the substrate S is recovered in the ozone water tank 14 via the recovery pipe 18.
[0016]
With this configuration, it is possible to supply ozone water to the main surface of the substrate S placed on the entrance conveyor 1, decompose organic substances in the resist film on the surface, and soften the hardened portion of the surface layer of the resist film. As described above, in the entrance conveyor 1, the substrate S is swung in the transport direction TD and the opposite direction, so that the treatment with ozone water is uniformly performed over the entire main surface of the substrate S and is determined in advance. Over a desired period of time.
[0017]
In addition, it is preferable to supply ozone water gently and in a strip shape from the ozone water nozzle 13 so as to form a liquid layer of ozone water on the main surface of the substrate S. On the other hand, if ozone water is ejected violently in the form of a spray, the discharged ozone water is granular, so the contact area with the surrounding atmosphere (air) is large, so ozone in ozone water escapes into the atmosphere. It ’s not good.
[0018]
The stripping tank 2 includes a stripping liquid spray nozzle 23 (stripping liquid supply means) for spraying the stripping liquid onto the main surface of the substrate S above the transport roller 21. The stripping solution stored in the stripping solution tank 24 is pumped out to the stripping solution spray nozzle 23 by a pump 25 and supplied from a stripping solution supply pipe 27 through an air valve 26. The air valve 26 is controlled to be opened and closed by the control device 5. The stripping liquid after being supplied to the substrate S is collected in the stripping liquid tank 24 via a collection pipe 28 connected to the bottom surface of the stripping tank 2.
[0019]
With this configuration, the stripping solution can be supplied toward the main surface of the substrate S treated with ozone water, and the resist film on the surface can be stripped. At this time, the substrate S is swung by the operation control of the transport roller 21 by the control device 5 as described above. Thereby, the process with respect to the whole main surface of the board | substrate S can be performed uniformly and only for the required time.
[0020]
The rinsing tank 3 includes a cleaning liquid spray nozzle 33 for supplying pure water as a cleaning liquid to the main surface of the substrate S above the transport roller 31. The cleaning liquid stored in the cleaning liquid tank 34 is pumped out by the pump 35 to the cleaning liquid spray nozzle 33 and supplied from the cleaning liquid supply pipe 37 via the air valve 36. The air valve 36 is controlled to be opened and closed by the control device 5. The cleaning liquid supplied to the substrate is recovered in the cleaning liquid tank 34 via the electromagnetic valve 61 and the recovery pipe 38 or is discharged via the electromagnetic valve 62 and the waste liquid pipe 39. The opening and closing of the electromagnetic valves 61 and 62 is controlled by the control device 5.
[0021]
With this configuration, the cleaning liquid can be supplied toward the main surface of the substrate S treated with the stripping liquid, and the stripping liquid and the like on the surface can be washed away. At this time, the substrate S is swung by the control of the transport roller 31 by the control device 5, whereby the entire main surface of the substrate S can be thoroughly cleaned and the cleaning process can be performed for a necessary time. Can do.
[0022]
Further, the control device 5 closes the electromagnetic valve 61 and opens the electromagnetic valve 62 in the initial period when the cleaning process for a certain substrate S is started. As a result, the cleaning liquid containing a large amount of stripping liquid or the like is discarded. Thereafter, after a predetermined time has elapsed, the control device 5 opens the electromagnetic valve 61 and closes the electromagnetic valve 62. Accordingly, a relatively clean cleaning liquid after being used for cleaning the substrate S can be collected in the cleaning liquid tank 34.
[0023]
A pair of air knife devices 43 </ b> A and 43 </ b> B are disposed at the outlet of the rinsing tank 3, i.e., at the entrance of the outlet conveyor 4, by blowing dry air onto the upper and lower surfaces of the substrate S to remove moisture on the upper and lower surfaces of the substrate S. . Compressed air from an air supply pipe 44 is supplied to the pair of air knife devices 43A and 43B. An air valve 45 is interposed in the air supply pipe 44, and the air valve 45 is opened and closed. It is controlled by the control device 5.
[0024]
As described above, according to this embodiment, in the entrance conveyor 1, ozone water is supplied to the main surface of the substrate S, and then in the peeling tank 2, the stripping liquid is sprayed on the main surface of the substrate S. In the washing tank 3, the cleaning liquid is sprayed on the main surface of the substrate S to wash away the stripping liquid. Thereby, first, the denatured portion of the surface of the resist film and the residue on the main surface of the substrate S are decomposed by the ozone water, so that the resist film can be efficiently and satisfactorily removed by the subsequent treatment with the stripping solution.
[0025]
FIG. 2 is a schematic cross-sectional view showing a configuration of a resist film peeling apparatus according to a reference example . In FIG. 2, parts equivalent to those shown in FIG. 1 are given the same reference numerals as those in FIG. 1, and differences from the above embodiment will be mainly described.
In this reference example , the electromagnetic valve 62 is connected to the reuse liquid pipe 71. The reuse liquid pipe 71 is connected to a reuse liquid nozzle 72 (reuse liquid supply means) of the inlet conveyor 1, and a pump 73 is interposed in the middle. The reuse liquid nozzle 72 is disposed above the transport roller 11 and supplies the reuse liquid toward the main surface of the substrate S transported by the transport roller 11. In this case, the reuse liquid is a concentrated liquid containing a high concentration of a peeling liquid that is washed away from the main surface of the substrate S in the initial stage of water washing in the water washing tank 3, and this concentrated liquid is a waste liquid in the above-described embodiment. It has been done.
[0026]
In order to reuse the concentrated liquid, the control device 5 closes the electromagnetic valve 61 and opens the electromagnetic valve 62 when processing on a certain substrate S is started in the washing tank 3. As a result, the reuse liquid is supplied from the reuse liquid nozzle 72 to the main surface of the unprocessed substrate S in the inlet conveyor 1 via the reuse liquid pipe 71. Thereafter, when a certain time has elapsed from the start of the water washing process, the control device 5 opens the electromagnetic valve 61 and closes the electromagnetic valve 62. As a result, the cleaning liquid containing almost no stripping liquid is collected in the cleaning liquid tank 34.
[0027]
A waste liquid line 75 for discarding the reuse liquid after being supplied to the substrate S is connected to the bottom surface of the entrance conveyor 1.
Thus, the concentrate is supplied to the main surface of the substrate S in the inlet mouth conveyor 1, further thereafter, the stripping solution in the stripping tank 2 is supplied to the main surface of the substrate S. Thereby, the altered layer in the surface layer portion of the resist film formed on the main surface of the substrate S and the residue on the main surface of the substrate S can be removed satisfactorily. In addition, since the recycling liquid containing the stripping liquid supplied to the substrate S to be processed first is supplied to the main surface of the substrate S to be supplied thereafter, the stripping liquid can be used without waste. In addition, the resist stripping efficiency can be improved without causing a significant increase in cost.
[0028]
Note that a reuse liquid tank for storing the reuse liquid may be provided in the middle of the reuse liquid pipe 71, and the concentrated liquid may be supplied from the reuse liquid tank to the reuse liquid nozzle 72.
Has been described implementation form of the invention, the invention can be embodied in any other ways. For example, combining the implementation form and reference examples described above, the ozone water nozzle 13 to the entrance conveyor 1, both the recycling solution nozzle 72 is disposed at the inlet conveyor 1, the ozone water and recycling liquid Both may be supplied to the main surface of the substrate S. In this case, if ozone water is supplied first and then the reuse liquid is supplied, the organic substance decomposition effect by ozone water can be effectively used, and the resist film peeling efficiency can be further increased. Can do.
[0029]
Further, in such embodiments described above, but so as to supply the ozone water or recycled liquid to the main surface of the substrate S, ozone water and recycling liquid, immersing the substrate S to the ozone water or recycled solution Or may be supplied to the main surface of the substrate S. In short, ozone water or a reuse liquid may be brought into contact with the main surface of the substrate S. The same applies to the supply of the stripping solution to the substrate S.
[0030]
Furthermore, in the above-described embodiment, the glass substrate for a liquid crystal display device is given as an example of the substrate to be processed. However, the present invention is applicable to other substrates such as a semiconductor wafer, a glass substrate for a plasma display panel, and a glass substrate for a photomask. The present invention can also be applied to resist stripping processing on a processing substrate.
In addition, various design changes can be made within the scope of technical matters described in the claims.
[Brief description of the drawings]
1 is a schematic sectional view showing a configuration of a resist stripping apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic sectional view showing a configuration of a resist stripping apparatus according to a reference example .
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Entrance conveyor 11 Conveyance roller 12 Conveyance roller drive part 13 Ozone water nozzle 14 Ozone water tank 15 Pump 16 Air valve 17 Ozone water supply pipe 2 Peeling tank 21 Conveyance roller 22 Conveyance roller drive part 23 Stripping spray nozzle 24 Stripping liquid Tank 25 Pump 26 Air valve 27 Stripping liquid supply pipe 3 Washing tank 31 Conveying roller 32 Conveying roller driving section 33 Cleaning liquid spray nozzle 34 Cleaning liquid tank 35 Pump 36 Air valve 37 Cleaning liquid supply pipe 4 Exit conveyor 41 Conveying roller 42 Conveying roller driving section 5 Control Device 61 Solenoid Valve 62 Solenoid Valve 71 Reuse Liquid Pipe 72 Reuse Liquid Nozzle 73 Pump

Claims (5)

A method for peeling a resist film formed on a main surface of a substrate,
An ozone water supply process for supplying ozone water to the main surface of the substrate;
The main surface of the substrate after the ozone water is supplied viewed contains a stripping solution supply step of supplying a predetermined stripping solution,
The ozone water supply step is a step of cleaving molecular bonds of the resist film with ozone water,
The stripping solution supplying step is a step of stripping the resist film whose molecular bond is cleaved in the ozone water supplying step from the substrate with the stripping solution .   The resist film peeling method according to claim 1, wherein the resist film is a resist film after dry etching is performed. A resist film peeling apparatus for peeling a resist film formed on a main surface of a substrate,
Ozone water supply means for supplying ozone water to the main surface of the substrate;
Look containing a stripping solution supply means for supplying a predetermined stripping solution to the main surface of the substrate where ozone water is supplied by the ozone water supply means,
The resist film is stripped by supplying a stripping solution from the stripping solution supplying means to the resist film whose molecular bond is cleaved by ozone water supplied from the ozone water supplying means, and stripping the resist film. apparatus.   4. The resist film peeling apparatus according to claim 3, wherein the resist film is a resist film after dry etching is performed.   The substrate further includes transport means for transporting the substrate horizontally with its main surface facing upward,
  5. The stripping solution is supplied to the substrate transported by the transporting unit after the ozone water is supplied from the ozone water supplying unit, and then the stripping solution is supplied from the stripping solution supplying unit. Resist film stripping device.

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