JP3938696B2 - Electrode connection method, contaminant removal apparatus, and electrode connection apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
[0002]
The present invention relates to an electrode connection method, a contaminant removal apparatus, and an electrode surface activation apparatus, and more particularly to an electrode connection method, a contaminant removal apparatus, and an electrode surface activation apparatus that connect electrodes using solid-phase bonding.
[0003]
With recent miniaturization and thinning of electronic devices, there is an increasing demand for high-density mounting of electronic components. Therefore, when an electronic component such as a semiconductor chip is connected to a substrate, a mounting method is often used in which a bare chip provided with a protruding electrode (bump) is flip-chip bonded to the substrate. A protruding electrode is formed on the electrode of the semiconductor chip used for the flip chip mounting, and it is necessary to electrically bond the protruding electrode and the wiring on the substrate.
[Prior art]
[0004]
In recent years, solid-state bonding has been attracting attention as a method for mounting highly integrated and miniaturized semiconductor devices on a substrate with high reliability at low temperature and low pressure. As a specific bonding method by solid phase bonding, a method is known in which the bonding surfaces of electrodes (for example, an electrode of a semiconductor device and an electrode of a substrate to which the electrode is connected) are directly brought into close contact with each other and pressed to perform solid phase bonding. Yes.
[0005]
However, if an oxide film such as a contaminant or an oxide exists on the bonding surface, a solid phase bonding between metal atoms cannot be performed. Therefore, when solid phase bonding is performed, removal of the oxide film on the bonding surface and activation are performed .
[0006]
As a specific method for removing and activating the oxide film on the bonding surface, a method of irradiating the bonding surfaces with an inert gas ion beam or an inert gas fast atom beam, a method of applying ultrasonic waves between the bonding surfaces, or a bonding surface A method of applying friction between them is used.
[0007]
Moreover, after activating an electrode by said method, it is necessary to maintain the state which the electrode surface activated until it joins these electrodes. This is because even if the oxide film is removed and activated on the bonding surface, the oxide film is formed again on the surface of the bonding surface when the bonding film is returned to the atmosphere.
[0008]
For this reason, conventionally, when the oxide film removal and the activation process are completed, the activated electrode is held in a vacuum or in an inert gas atmosphere, and the electrode bonding process is the same. It was supposed to be implemented in an atmosphere.
[Problems to be solved by the invention]
[0009]
However, when the conventional method described above is used, it is necessary to maintain the activated state of the electrode from the activation of the electrode surface to the solid phase bonding of the electrode. A mechanism for holding the substrate in a vacuum or in an inert atmosphere is required.
[0010]
For this reason, it is impossible to use a high-speed flip chip bonder capable of joining parts to be joined in the atmosphere, and thus the efficiency of electrode connection processing is reduced. there were. In addition, when the flip chip bonder is provided with a mechanism for realizing an inert atmosphere in order to increase the efficiency of the connection process, the equipment becomes complicated and expensive, and the equipment cost increases.
[0011]
The present invention has been made in view of the above points, and an object of the present invention is to provide an electrode connection method, a contaminant removal apparatus, and an electrode connection apparatus that can perform solid-phase connection of electrodes easily and inexpensively.
[Means for Solving the Problems]
[0012]
In order to solve the above-described problems, the present invention is characterized by the following measures.
[0013]
The invention described in claim 1
In the electrode joining method for joining the first electrode and the second electrode,
Removing contaminants on each joint surface of the first and second electrodes in an inert gas or vacuum atmosphere ;
An inert gas or vacuum atmosphere, a step of coating an object to be covered member to said first and second electrodes,
A step of pressing the first electrode and the second electrode, and piercing the coating member to solid-phase bond the first electrode and the second electrode. It is.
[0014]
According to the above invention, after removing contaminants on the joint surfaces of the first and second electrodes, the joint surfaces are sealed with the covering member, so that the first and second electrodes can be placed in the atmosphere. It is possible to maintain a state in which contaminants on the joint surface are removed .
[0015]
In addition, when the bonding surfaces of the first and second electrodes are solid-phase bonded, each electrode breaks through the covering member and is solid-phase bonded, so that solid-phase bonding in the atmosphere is possible. Accordingly, the flip-chip bonding can be applied in the atmosphere, and the mass production process can be handled.
[0016]
The invention according to claim 2
The electrode connection method according to claim 1,
The removal of contaminants on the bonding surfaces of the first and second electrodes is characterized by removing an oxide film , moisture, or oil / fat formed on the bonding surfaces.
[0017]
The invention according to claim 3
The electrode connection method according to claim 1 or 2,
Etching by plasma irradiation is used as a treatment for removing contaminants on the joint surfaces of the first and second electrodes.
[0018]
According to the above-described invention, contaminants on the joint surface are removed by plasma etching, so that it is possible to reliably remove contaminants from a plurality of electrodes with high throughput.
[0019]
The invention according to claim 4
The electrode connection method according to claim 1 or 2,
The formic acid reducing action is used as a treatment for removing contaminants on the joint surfaces of the first and second electrodes.
[0020]
According to the above invention, contaminants on the joint surface are removed using the reducing action of formic acid, so that it is possible to reliably activate a plurality of electrodes with inexpensive equipment.
[0021]
The invention according to claim 5
In the electrode connection method according to any one of claims 1 to 4,
As a covering member for maintaining the state where the contaminants are removed , an adhesive film having electrical insulation is used.
[0022]
According to the above invention, the use of the adhesive film having electrical insulation as the covering member makes it possible to easily perform the covering process for maintaining the state in which the contaminants of the electrode are removed. It is possible to easily cope with the automation of the coating process.
[0023]
Further, the invention described in claim 6
The electrode connection method according to claim 1.
The removal state of the contaminant is maintained by the covering member.
[0024]
According to the above invention, air that causes electrode oxidation is not interposed between each electrode and the covering member, and the state where the contaminants of the electrode are removed can be more reliably maintained.
[0025]
The invention according to claim 7
The electrode connection method according to any one of claims 1 to 6,
The first and second electrodes are projecting electrodes formed to project on the substrate.
[0026]
According to the above invention, the first and second electrodes are constituted by the protruding electrodes, so that when the first and second electrodes are solid-phase bonded by breaking through the covering member, the treatment of breaking through the covering member is ensured. It is possible to prevent the covering member from remaining between the electrodes.
[0027]
The invention according to claim 8
A contaminant remover that removes contaminants from the electrode surface,
A first apparatus for removing contaminants on the bonding surface by removing an oxide film on the bonding surface of the electrode , moisture, or oil and fat in an inert gas or vacuum atmosphere ;
An inert gas or vacuum atmosphere, and is characterized in that it comprises a second device for coating treatment to be covered member to the electrodes of the joining surface.
[0028]
According to the above invention, the contamination of the electrode is removed by the first device, and the covering member is covered by the second device. Therefore, the covering member can be disposed on the electrode with a simple configuration. .
[0029]
In the above contaminant removal apparatus,
The first apparatus may be configured to remove the contamination by removing the oxide film formed on the bonding surface when the contaminant on the bonding surface of the electrode is removed .
[0030]
In the above contaminant removal apparatus,
The first apparatus may be configured to remove contaminants on the bonding surface using etching by plasma irradiation.
[0031]
In the above contaminant removal apparatus,
The first apparatus may be configured to remove contaminants on the joint surface using a reducing action of formic acid.
[0032]
In the above contaminant removal apparatus,
As a covering member for maintaining the active state, an adhesive film having electrical insulation may be used.
[0033]
In the above contaminant removal apparatus,
The second apparatus may be configured to perform a process of covering the electrode with the covering member in an inert gas atmosphere.
[0034]
An electrode connection device according to the invention of claim 9 is
A contaminant removal apparatus according to claim 8,
Which is characterized by comprising a joining device for pressure contact with a pair of electrodes having a bonding surface contaminants have been removed by the contaminant removal device, the covering member is solid phase bonding the pair of electrodes breaks through It is.
[0035]
According to the present invention as described above, to remove contaminants of the joint surface of the electrode by contaminants removal device, which while maintaining the state of being decontaminated by the covering member, for bonding the electrode to each other in the joining device, Solid-state joining with low connection temperature and high load reliability is possible, and at the same time, it can be applied to mass production processes, and production costs can be greatly reduced.
DETAILED DESCRIPTION OF THE INVENTION
[0036]
Next, embodiments of the present invention will be described with reference to the drawings.
[0037]
1 to 7 are process diagrams for explaining an electrode connecting method according to an embodiment of the present invention, and FIG. 8 is a schematic configuration of a contaminant removing apparatus and an electrode connecting apparatus according to an embodiment of the present invention. FIG.
[0038]
In the following description, an example will be described in which the component-side electrode 12 formed on the electronic component 10 and the substrate-side electrode 22 formed on the circuit board 20 are joined. However, the application of the present invention is not limited to the joining of the electronic component 10 and the circuit board 20, but can be widely applied to the joining of electrodes.
[0039]
FIG. 1 shows the electronic component 10 and the circuit board 20 before the electrode connection process is started. The electronic component 10 is, for example, a semiconductor chip, and a plurality of component-side electrodes 12 are formed.
[0040]
The circuit board 20 is a board on which the electronic component 10 is mounted. The circuit board 20 is, for example, a flexible board, and a substrate-side electrode 22 corresponding to the electronic component 10 is formed at a predetermined position where the electronic component 10 is mounted.
[0041]
Both the component-side electrode 12 formed on the electronic component 10 and the substrate-side electrode 22 formed on the circuit board 20 are protruding electrodes formed by, for example, electroless plating. Accordingly, the electrodes 12 and 22 are configured to protrude from the electrode forming surface of the electronic component 10 and the electrode forming surface of the circuit board 20.
[0042]
Here, the electrode connection device 40 used to connect the electronic component 10 having the above-described configuration and the circuit board 20 will be described.
[0043]
FIG. 8 is a schematic configuration diagram of the electrode connection device 40. In short, the electrode connection device 40 includes an electrode surface activation device 41 (contaminant removal device) and a bonding device 42. In general, the electrode surface activation device 41 includes an activation device 44, a coating device 45, a film loader 46, and the like.
[0044]
The activation device 44 is a device that removes and activates surface oxides on the component side bonding surface 12a and the substrate side bonding surface 22a, which are the surfaces of the component side electrode 12 and the substrate side electrode 22, as will be described later. In the present embodiment, a plasma etching apparatus is used in the activation apparatus 44.
[0045]
The coating device 45 is a device for coating the adhesive film 30 on the component side electrode 12 and the substrate side electrode 22 activated by the activation device 44 as described later. For this reason, a film loader 46 for supplying the adhesive film 30 to the coating device 45 is connected to the coating device 45. The adhesive film 30 is transported to the coating device 45 by the transport device 47C.
[0046]
On the other hand, the bonding apparatus 42 is for solid-phase bonding of the component side electrode 12 of the component side electrode 12 activated and the substrate side bonding surface 22a of the substrate side electrode 22 as described later. In this embodiment, a flip chip bonder is used as the joining device 42.
[0047]
The loader 43 accommodates the electronic component 10 and the circuit board 20 in the state shown in FIG. 1 and is transported toward the activation device 44 at a predetermined timing. The unloader 48 stores the electronic component 10 and the circuit board 20 in an integrated state when the component-side electrode 12 and the substrate-side electrode 22 are solid-phase bonded. Further, the conveying devices 47A to 47E are conveying devices, and convey the electronic component 10, the circuit board 20, or the adhesive film 30 between the devices 42 to 48.
[0048]
Next, a connection process between the electronic component 10 and the circuit board 20 that is performed using the electrode connection device 40 shown in FIG. 8 will be described in detail with reference to FIGS.
[0049]
The electronic component 10 and the circuit board 20 shown in FIG. 1 are accommodated in the loader 43 of the electrode connection device 40 shown in FIG. Then, at a predetermined timing, the electronic component 10 and the circuit board 20 are transported to the activation device 44 constituting the electrode surface activation device 41 by the transport device 47A.
[0050]
The activation device 44 is a plasma etching device, and the electronic component 10 and the circuit board 20 are transferred into a chamber that maintains an atmosphere in which argon plasma can be irradiated. In the activation device 44, the plasma processing is performed by irradiating the component side bonding surface 12a of the component side electrode 12 and the substrate side bonding surface 22a of the substrate side electrode 22 with argon plasma. FIG. 2 shows a state in which argon plasma is applied to the component-side bonding surface 12a and the substrate-side bonding surface 22a.
[0051]
By performing the plasma etching process in this way, contaminants such as oxide films, moisture, oils and fats existing on the surfaces of the electrodes 12 and 22 are removed, and the bonding surfaces 12a and 22a of the electrodes 12 and 22 are activated. It becomes. Further, by activating the component-side bonding surface 12a and the substrate-side bonding surface 22a by plasma etching as in this embodiment, the bonding surfaces 12a, 22a of the plurality of electrodes 12, 22 are reliably activated with high throughput. can do.
[0052]
Further, the method of removing and activating the oxides of the joint surfaces 12a and 22a is not limited to the plasma etching process described above. For example, steam of heated carboxylic acid (for example, 250 ° C. formic acid) is sprayed on the surfaces of the electrodes 12 and 22 to remove contaminants by the reducing action of the carboxylic acid, and the joining surfaces 12a and 22a of the electrodes 12 and 22 are removed. Can also be activated. When this activation method is adopted, the equipment cost can be reduced as compared with plasma etching.
[0053]
When the activation process is completed, the electronic component 10 and the circuit board 20 purge the inside of the activation device 44 with an inert gas in order to maintain the activated state of the activated bonding surfaces 12a and 22a. And the electronic component 10 and the circuit board 20 are conveyed to the coating | coated apparatus 45 using the conveying apparatus 47B by which the inside of the conveyance path was made into inert gas atmosphere.
[0054]
The inside of the coating apparatus 45 is also an inert gas atmosphere, and therefore, the active state of each of the bonding surfaces 12a and 22a is not deteriorated during the transfer process from the activation apparatus 44 to the coating apparatus 45. Note that the atmosphere of the activation device 44, the coating device 45, and the transfer device 47B is not necessarily limited to an inert gas atmosphere, and other atmospheres (for example, for example, as long as the active state of the bonding surfaces 12a and 22a can be maintained). A vacuum atmosphere).
[0055]
As described above, the film loader 46 is connected to the coating device 45. The film loader 46 is configured to supply the adhesive films 30 </ b> A and 30 </ b> B to the coating device 45.
[0056]
In the coating apparatus 45 to which the film loader 46 is connected, the activated component side electrode 12 is coated with the adhesive film 30A sent from the film loader 44, and the activated substrate side electrode 22 is coated with the adhesive film 30B. (The adhesive films 30A and 30B are collectively referred to as the adhesive film 30).
[0057]
Specifically, as shown in FIG. 3, the adhesive films 30 </ b> A and 30 </ b> B supplied from the film loader 46 are arranged on the electrode forming surfaces of the electronic component 10 and the circuit board 20, and then the adhesive film is applied by a pressure plate (not shown). After pressurizing 30A and 30B toward the electronic component 10 and the circuit board 20, the inside of the coating apparatus 45 is decompressed.
[0058]
Thus, the electrodes 12 and 22 formed on the semiconductor chip and the circuit board 20 are covered with the adhesive films 30A and 30B as shown in FIG. The adhesive films 30 </ b> A and 30 </ b> B can be reliably adhered to the electrodes 12 and 22 by performing the pressurization and heating together during the coating process. The adhesive films 30A and 30B are film-like resins, and a thermosetting resin, a thermoplastic resin, or a mixture thereof can be used.
[0059]
As described above, the activated component-side electrode 12 and substrate-side electrode 22 (component-side bonding surface 12a and substrate-side bonding surface 22a) are covered with the adhesive films 30A and 30B, so that the electronic component 10 and the circuit board 20 are covered. Is removed from the electrode surface activation device 41 and placed in the atmosphere, the sealing effect is maintained. For this reason, the activation state of each joining surface 12a, 22a is maintained by adhesive film 30A, 30B.
[0060]
In addition, as described above, since the coating apparatus 45 is in an inert gas atmosphere, air that causes electrode oxidation is not interposed between the electrodes 12 and 22 and the adhesive films 30A and 30B. The active state of 12, 22 can be reliably maintained. Furthermore, since it is the structure which maintains the activation state of each joint surface 12a, 22a using adhesive film 30A, 30B, a process becomes easy compared with other coating processes (for example, coating, plating, sputtering, etc.), It is possible to easily cope with the automation of the coating process of the electrodes 12 and 22.
[0061]
In addition, after sealing each electrode 12 and 22 with adhesive film 30A, 30B, when there exists comparatively long time until it implements the solid-phase joining mentioned later, the electronic component 10 which coat | covered adhesive film 30A, 30B, and It is desirable to store the circuit board 20 in an environment where the atmosphere is shut off, for example, by storing it in a vacuum desiccator or the like.
[0062]
As described above, the joining device 42 is a flip chip bonder. In the joining device 42, connection processing between the electronic component 10 and the circuit board 20 is performed. The flip chip bonder constituting the bonding apparatus 42 is generally used in a semiconductor manufacturing process or the like.
[0063]
Therefore, unlike the activation device 44 and the coating device 45, the bonding device 42 is not provided with a mechanism for creating an inert gas atmosphere or a vacuum atmosphere. For this reason, the facility cost for connecting the electronic component 10 and the circuit board 20 is reduced, the throughput of the connection process is improved, and the mass production process can be supported.
[0064]
When the electronic component 10 and the circuit board 20 are transported into the bonding apparatus 42, the electronic component 10 covered with the adhesive film 30A and the circuit board 20 covered with the adhesive film 30B are as shown in FIG. The side electrode 12 and the substrate side electrode 22 are positioned so as to face each other. Subsequently, the electronic component 10 and the circuit board 20 are pressed together while being heated, as shown in FIG. At this time, the pressure contact process is performed while correcting so that the electronic component 10 and the circuit board 20 are not warped.
[0065]
Thereby, the component side electrode 12 and the board | substrate side electrode 22 penetrate through adhesive film 30A, 30B, and are solid-phase-bonded. At this time, the adhesive films 30 </ b> A and 30 </ b> B are cured without entering between the electrodes 12 and 22, and solid phase bonding with low connection resistance is possible.
[0066]
Further, as shown in FIG. 7, in the state where the component side electrode 12 and the substrate side electrode 22 are joined, an adhesive film 30 is interposed between the electronic component 10 and the circuit board 20, and this adhesive film. 30 functions as an underfill resin. Therefore, the bonding between the component side electrode 12 and the substrate side electrode 22 can be strengthened.
[0067]
Further, as described above, in the present embodiment, since each of the electrodes 12 and 22 is constituted by a protruding electrode (bump), the process of breaking through the adhesive films 30A and 30B can be reliably performed at the time of solid phase bonding. Therefore, it is possible to reliably prevent the adhesive films 30A and 30B from remaining between the component-side electrode 12 and the substrate-side electrode 22, and to perform solid-phase bonding of both the electrodes 12 and 22.
[0068]
Regarding the above description, the following items are further disclosed.
[0069]
(Supplementary note 1) In the electrode joining method for joining the first electrode and the second electrode,
Removing contaminants on each joint surface of the first and second electrodes in an inert gas or vacuum atmosphere ;
An inert gas or vacuum atmosphere, a step of coating an object to be covered member to said first and second electrodes,
An electrode comprising press-contacting the first electrode and the second electrode, piercing the covering member, and solid-phase bonding the first electrode to the second electrode. Connection method.
[0070]
(Appendix 2) In the electrode connection method described in Appendix 1,
The contaminant removal of each joint surface of the said 1st and 2nd electrode is an electrode connection method characterized by removing the oxide film , the water | moisture content, or oil and fat formed in the said joint surface.
[0071]
(Appendix 3) In the electrode connection method according to Appendix 1 or 2,
An electrode connection method, wherein etching by plasma irradiation is used as a treatment for removing contaminants on the joint surfaces of the first and second electrodes.
[0072]
(Appendix 4) In the electrode connection method according to Appendix 1 or 2,
An electrode connecting method, wherein a reducing action of formic acid is used as a treatment for removing contaminants on the joint surfaces of the first and second electrodes.
[0073]
(Appendix 5) In the electrode connection method according to any one of appendices 1 to 4,
An electrode connection method using an adhesive film having electrical insulation as a covering member for maintaining the state in which the contaminants are removed .
[0074]
(Appendix 6) In the electrode connection method according to any one of appendices 1 to 5,
An electrode connection method characterized by maintaining the removed state of the contaminant by the covering member.
[0075]
(Appendix 7) In the electrode connection method according to any one of appendices 1 to 6,
The electrode connection method according to claim 1, wherein the first and second electrodes are projecting electrodes that project from the substrate.
[0076]
(Appendix 8) A contaminant removal apparatus for removing contaminants from the electrode surface,
A first apparatus for removing contaminants on the bonding surface by removing an oxide film on the bonding surface of the electrode , moisture, or oil and fat in an inert gas or vacuum atmosphere ;
An inert gas or vacuum atmosphere, decontamination apparatus characterized by comprising a second apparatus for coating treatment to be covered member to the electrodes of the joining surface.
[0077]
(Appendix 9) In the pollutant removal apparatus described in Appendix 8,
The first device includes:
Removing the contaminants of the joint surface of the electrode, decontamination apparatus characterized by performing contaminant removal by removing the oxide film formed on the bonding surface.
[0078]
(Supplementary Note 10) In the contaminant removal apparatus according to Supplementary Note 8 or 9,
The first device includes:
An electrode surface activation apparatus characterized in that contaminants on the joint surface are removed using etching by plasma irradiation.
[0079]
(Supplementary note 11) In the contaminant removal apparatus according to supplementary note 8 or 9,
The first device includes:
An electrode surface activation device characterized in that contaminants on the joint surface are removed using a reducing action of formic acid.
[0080]
(Supplementary note 12) In the contaminant removal apparatus according to any one of supplementary notes 8 to 11,
A contaminant removal apparatus using an adhesive film having electrical insulation as a covering member for maintaining the contaminant removal state.
[0081]
(Supplementary note 13) In the contaminant removal apparatus according to any one of supplementary notes 8 to 12,
The second device includes:
The contaminant removal apparatus characterized by implementing the process which coat | covers the said coating | coated member to the said electrode in inert gas atmosphere.
[0082]
(Supplementary note 14) The contaminant removal apparatus according to any one of supplementary notes 8 to 13, and
Electrode, characterized in that it comprises a joining device for pressure contact with a pair of electrodes having a bonding surface contaminants have been removed by the contaminant removal device, the covering member is solid phase bonding the pair of electrodes breaks through Surface activation device.
【The invention's effect】
[0083]
As described above, according to the present invention, various effects described below can be realized.
[0084]
According to the first aspect of the present invention, after removing contaminants on the joint surfaces of the first and second electrodes, the joint surfaces are sealed with the covering member. It is possible to maintain the state in which the contaminants on the joint surface have been removed even if placed on the surface. In addition, it is possible to apply the flip chip bonding in the air, and it is possible to cope with the mass production process.
[0085]
Further, according to the invention described in claim 2, since the electrodes can be joined with the oxide formed on the electrode surface of the electronic component being removed, a solid phase with low connection temperature and high load reliability. Bonding is possible, and the yield in connection processing can be improved.
[0086]
According to the third aspect of the present invention, since contaminants on the bonding surface are removed by plasma etching, a plurality of electrodes can be reliably activated with high throughput.
[0087]
According to the invention described in claim 4, since the contaminants on the joint surface are removed by using the reducing action of formic acid, it becomes possible to reliably activate the plurality of electrodes with inexpensive equipment.
[0088]
According to the fifth aspect of the present invention, it is possible to easily perform the coating process for maintaining the state in which the contaminants of the electrode are removed, and it is possible to easily cope with the automation of the electrode coating process. be able to.
[0089]
According to the sixth aspect of the present invention, air that causes electrode oxidation is not interposed between each electrode and the covering member, and the state in which contaminants on the electrode are removed is more reliably maintained. be able to.
[0090]
According to the seventh aspect of the present invention, when the first and second electrodes are solid-phase bonded by breaking through the covering member, it is possible to reliably perform the process of breaking through the covering member. Can be prevented from remaining.
[0091]
According to the invention described in claim 8, the disposing process of the covering member to the electrode can be performed with a simple configuration.
[0092]
In addition, according to the ninth aspect of the invention, it is possible to perform solid-phase bonding with high connection reliability at a low temperature and a low load, and at the same time, it is possible to cope with a mass production process, thereby greatly reducing production costs.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining an electrode connection method according to an embodiment of the present invention, and is a diagram showing an electronic component and a circuit board before performing a contaminant removal process.
FIG. 2 is a diagram for explaining an electrode connection method according to an embodiment of the present invention, and is a diagram showing a state in which a contaminant removal process is performed on an electrode.
FIG. 3 is a diagram for explaining an electrode connection method according to an embodiment of the present invention, and is a diagram showing a state in which an adhesive film is attached to an electrode from which contaminants have been removed .
FIG. 4 is a diagram for explaining an electrode connecting method according to an embodiment of the present invention, and shows a state in which an electrode from which contaminants have been removed is covered with an adhesive film.
FIG. 5 is a diagram for explaining an electrode connecting method according to an embodiment of the present invention, and is a diagram showing a state in which an electrode of an electronic component and an electrode of a circuit board are positioned to face each other.
FIG. 6 is a view for explaining an electrode connecting method according to an embodiment of the present invention, and is a view showing a state where an electrode of an electronic component and an electrode of a circuit board are heated and pressurized.
FIG. 7 is a diagram for explaining an electrode connection method according to an embodiment of the present invention, and shows a state in which an electrode of an electronic component and an electrode of a circuit board are joined.
FIG. 8 is a diagram for explaining a contaminant removal apparatus and an electrode connection apparatus according to an embodiment of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Electronic component 12 Component side electrode 12a Component side bonding surface 20 Circuit board 22 Substrate side electrode 22a Board side bonding surface 30, 30A, 30B Adhesive film 40 Electrode connection apparatus 41 Electrode surface activation apparatus (contaminant removal apparatus)
42 Bonding device 44 Activating device 45 Coating device 46 Film loaders 47A to 47E Conveying device 50 Electrode surface activating device

Claims (9)

In the electrode joining method for joining the first electrode and the second electrode,
Removing contaminants on each joint surface of the first and second electrodes in an inert gas or vacuum atmosphere ;
An inert gas or vacuum atmosphere, a step of coating an object to be covered member to said first and second electrodes,
An electrode comprising press-contacting the first electrode and the second electrode, piercing the covering member, and solid-phase bonding the first electrode to the second electrode. Connection method. The electrode connection method according to claim 1,
The contaminant removal of each joint surface of the said 1st and 2nd electrode is an electrode connection method characterized by removing the oxide film , the water | moisture content, or oil and fat formed in the said joint surface. The electrode connection method according to claim 1 or 2,
An electrode connection method, wherein etching by plasma irradiation is used as a treatment for removing contaminants on the joint surfaces of the first and second electrodes. The electrode connection method according to claim 1 or 2,
An electrode connecting method, wherein a reducing action of formic acid is used as a treatment for removing contaminants on the joint surfaces of the first and second electrodes. In the electrode connection method according to any one of claims 1 to 4,
An electrode connection method using an adhesive film having electrical insulation as a covering member for maintaining the state in which the contaminants are removed . The electrode connection method according to claim 1, wherein the removed state of the contaminant is maintained by the covering member. The electrode connection method according to any one of claims 1 to 6,
The electrode connection method according to claim 1, wherein the first and second electrodes are projecting electrodes that project from the substrate. A contaminant remover that removes contaminants from the electrode surface,
A first apparatus for removing contaminants on the bonding surface by removing an oxide film on the bonding surface of the electrode , moisture, or oil and fat in an inert gas or vacuum atmosphere ;
An inert gas or vacuum atmosphere, decontamination apparatus characterized by comprising a second apparatus for coating treatment to be covered member to the electrodes of the joining surface. A contaminant removal apparatus according to claim 8,
Electrode, characterized in that it comprises a joining device for pressure contact with a pair of electrodes having a bonding surface contaminants have been removed by the contaminant removal device, the covering member is solid phase bonding the pair of electrodes breaks through Connected device.

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