JP3930410B2 - Thermoelectric element module and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thermoelectric element module that generates power using a temperature difference, or vice versa, and generates a temperature difference according to the applied electric power. In particular, the thermoelectric element has good yield and excellent reliability. The present invention relates to a module and a manufacturing method thereof.
[0002]
[Prior art]
This type of thermoelectric element module is configured by combining P-type and N-type thermoelectric elements using thermoelectric effects such as the Thomson effect, Peltier effect, Seebeck effect, etc., and has already been mass-produced as a cooling unit. In addition, research and development is also underway as a power generation unit.
As this thermoelectric module, the one shown in FIG. 10 is known.
[0003]
That is, reference numeral 31 in the figure denotes a lower insulating substrate, and an upper insulating substrate 32 is disposed on the lower insulating substrate 31 so as to be opposed to each other. Electrodes 33 and 34 are respectively disposed on the opposing surfaces of the upper and lower insulating substrates 31 and 32, and P-type and N-type thermoelectric elements 35 and 36 are interposed between the electrodes 33 and 34. The upper and lower ends of the P-type and N-type thermoelectric elements 35 and 36 are bonded to the electrodes 33 and 34 by bonding materials 37 and 38, and are electrically connected in series and thermally in parallel (for example, patents). Reference 1).
[0004]
In order to make the power generation efficiency of the thermoelectric element module close to the power generation efficiency of the thermoelectric elements 35 and 36 themselves, it is necessary to smoothly supply heat to the thermoelectric elements 35 and 36 and release heat from the thermoelectric elements 35 and 36.
[0005]
For this reason, ceramic substrates excellent in heat conduction are used for the insulating substrates 31 and 32 constituting the thermoelectric element module. Furthermore, the electrodes 33 and 34 to which the thermoelectric elements 35 and 36 are joined are made of a material having low electric resistance.
[0006]
By the way, for example, even when the ceramic substrate has a size of 50 mm × 50 mm, a warp of 80 to 150 μm occurs. Further, when the size of the thermoelectric module is increased, a warp of 80 to 150 μm or more may occur. is expected.
[0007]
Also, when the thermoelectric elements 35 and 36 are processed to have a desired size, a dimensional tolerance of about ± 30 to 50 μm occurs.
For this reason, it is necessary to be able to bond well even if there is a height variation of 30 to 200 μm at the bonding portion between the thermoelectric elements 35 and 36 and the electrodes 33 and 34.
[0008]
On the other hand, in the thermoelectric element module, when moisture enters the inside of the module, dew condensation occurs on the electrode 34 on the heat absorption surface side, and this moisture promotes migration of the electrode metal due to energization. Module failure may occur.
[0009]
Further, since the thermoelectric elements 35 and 36 are easily oxidized when exposed to a high temperature in the atmosphere, the thermoelectric characteristics of the thermoelectric elements 35 and 36 are deteriorated. Further, when exposed to a high temperature in a vacuum, the components in the thermoelectric elements 35 and 36 are evaporated, and the thermoelectric elements do not function.
[0010]
Therefore, in order to ensure the reliability of the thermoelectric element module, it is important that the thermoelectric element portion is sealed under reduced pressure in a non-oxidizing gas atmosphere to prevent infiltration of moisture and oxygen.
Conventionally, various studies have been conducted as measures for sealing a module. For example, the thermoelectric elements 35 and 36 and the thermoelectric elements including the electrodes 33 and 34 are wrapped in a sealing bag made of a hardly moisture-permeable thin film material so that the inside of the sealing bag is made an inert gas atmosphere or a reduced pressure state. The module is designed to prevent moisture from remaining and entering the inside of the module (for example, see Patent Document 2).
[0011]
[Patent Document 1]
JP-A-4-85974 Publication
[Patent Document 2]
JP-A-6-294562 (FIG. 8).
[0013]
[Problems to be solved by the invention]
However, conventionally, the bonding yield between all the thermoelectric elements 35 and 36 in the thermoelectric element module and the electrodes 33 and 34 is low, and even if they are bonded, voids or the like are generated at the bonding portion, and the bonding reliability is increased. There was a problem with sex.
[0014]
Also, if the thermoelectric element module is wrapped in a sealing bag made of a hardly breathable thin film material and the sealing bag is in a reduced pressure state of an inert gas atmosphere, punching or the like may occur in the manufacturing process. easy. For this reason, there is a disadvantage that the yield is poor and the reliability of the product is lowered. In addition, the module size increases, and the power generation efficiency per unit area also decreases.
[0015]
The present invention has been made paying attention to the above circumstances, and the purpose thereof is to improve the junction yield between the thermoelectric element and the electrode even if the insulating substrate is warped or the height of the thermoelectric element varies. An object of the present invention is to provide a thermoelectric element module that is excellent in reliability after bonding, prevents occurrence of perforation of a sealing material, has a good yield, and has excellent product reliability, and a manufacturing method thereof.
[0016]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a first aspect of the present invention is the first insulating substrate on which a plurality of first electrodes are disposed, and the plurality of second electrodes disposed opposite to the first insulating substrate. a second insulating substrate but arranged, the first electrode and the second of the first insulating substrate prior SL so as to communicate electrode side hole portion provided on at least one electrode and the second A through-hole electrode portion formed on an inner peripheral surface of a substrate-side hole provided in at least one of the insulating substrates, and disposed between the first insulating substrate and the second insulating substrate; The first electrode, the other end portion is disposed between the P-type thermoelectric element bonded to the second electrode, the first insulating substrate and the second insulating substrate, and one end portion is the first electrode 1 electrode, the other end is joined to the second electrode, and is electrically connected in series with the P-type thermoelectric element A thermoelectric element, and at least one end of the P-type thermoelectric element and the N-type thermoelectric element is inserted into the through-hole electrode portion, and is at least one of the first electrode and the second electrode. It is characterized by being bonded to one side.
[0018]
According to a fourth aspect of the present invention, there is provided a step of joining one end of a P-type thermoelectric element to a first insulating substrate on which a plurality of first electrodes are disposed, and the P-type thermoelectric element is connected to the first electrode. A step of joining one end of the N-type thermoelectric element in an adjacent state, a second electrode formed on the surface, and a substrate side hole provided so as to communicate with the electrode side hole of the second electrode The other end portions of the P-type thermoelectric element and the N-type thermoelectric element are arranged opposite to each other on a second insulating substrate having a through-hole electrode portion formed on the inner peripheral surface of the inner surface, and the other end is disposed on the through-hole electrode portion. And a step of electrically joining the other end and the second electrode by inserting a portion.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail with reference to the embodiments shown in FIGS.
FIG. 1 shows a cross-sectional structure of a thermoelectric element module according to a first embodiment of the present invention.
In FIG. 1, reference numeral 1 denotes a lower insulating substrate as a first insulating substrate, and lower electrodes 2 as first electrodes are disposed on the upper surface portion of the lower insulating substrate 1. P-type thermoelectric elements 3 and N-type thermoelectric elements 4 are alternately arranged on the lower electrodes 2. The lower electrodes 2... And the lower end portions of the P-type and N-type thermoelectric elements 3 and 4 are joined by a joining material 5 such as a joining material.
[0021]
An upper insulating substrate 7 as a second insulating substrate is disposed opposite to the upper portion of the lower insulating substrate 1. An upper electrode 8 as a second electrode is disposed on the upper surface of the upper insulating substrate 7, that is, on the outer surface side that is a non-facing surface with respect to the lower insulating substrate 1.
[0022]
The upper insulating substrate 7 and the upper electrode 8 are provided with a plurality of holes 7a,..., 8a, respectively, in communication with each other, and the P-type and N-type thermoelectrics described above are provided in these holes 7a,. The upper ends of the elements 3 and 4 are inserted. At the time of this insertion, the upper end surfaces of the thermoelectric elements 3 and 4 are in a state of being flush with the upper surface portion of the upper electrode 8 or slightly recessed, and a bonding material 10 described later is bonded to the upper end surface portions of the thermoelectric elements 3 and 4. When it is done, it can be joined well in a horizontal state.
[0023]
A bonding material 10 is provided on the upper surface portion of the upper electrode 8, and the bonding material 10 is bonded to the upper end surfaces of the P-type and N-type thermoelectric elements 3 and 4. Accordingly, the P-type and N-type thermoelectric elements 3 and 4 are electrically connected in series and thermally in parallel.
In this embodiment, since the operating temperature on the high temperature side of the thermoelectric element module is 500 ° C., the lower electrode 2 is Al, the lower insulating substrate 1 is an AlN-based ceramic substrate, and the bonding material 5 is Al— 12 wt% Si wax is used.
[0024]
Further, the material of the lower electrode 2 and the material of the bonding material 5 may be different materials depending on the operating temperature range of the thermoelectric element module. Further, as the P-type and N-type thermoelectric elements 3 and 4, those having a skutterudite structure are used. The material of the upper insulating substrate 7 has a Al ₂ 0 _3.
[0025]
In this embodiment, Cu is used as the material of the upper electrode 8. The upper electrode 8 may be changed depending on the use temperature of the thermoelectric module, and is not particularly limited. Furthermore, a solder paste having a melting temperature of around 280 ° C. is used as the bonding material 10 and is supplied by a dispenser.
[0026]
Further, in order to improve the bonding property between the bonding material 10 and the P-type and N-type thermoelectric elements 3 and 4, the upper electrode (Cu) 8 extends from the end face of the thermoelectric elements 3 and 4 to the periphery of the element about 300 μm below the end face. Is formed. The film thickness of the upper electrode (Cu) 8 was 2 μm formed by Cu sputtering and then 8 μm formed by electroplating to a total thickness of about 10 μm. The bonding material 10 may be changed depending on the operating temperature. Further, the end surface treatment of the thermoelectric elements 3 and 4 is not particularly limited as long as it can be bonded to the bonding material 10 without impairing the performance of the thermoelectric elements 3 and 4. It is not limited. Further, as long as the bonding material 10 and the thermoelectric elements 3 and 4 can be bonded satisfactorily, there is no need to form a film downward from the end face.
[0027]
Next, a method for manufacturing the thermoelectric element module described above will be described with reference to FIGS.
First, as shown in FIG. 2A, the bonding material 5 is supplied onto the lower electrode 2 of the lower insulating substrate 1. Next, as shown in FIG. 2B, the lower insulating substrate 1 is set in a jig 12 for fixing the substrate. After that, as shown in FIG. 2 (c), a jig 13 for arranging thermoelectric elements is arranged in the jig 9, and further, as shown in FIG. 2 (d), P-type and N-type thermoelectric elements. 3 and 4 are arranged.
[0028]
Next, the jig 12 is inserted into a hydrogen furnace (not shown) and heated, for example, with a hydrogen supply rate of 20 m ³ / h and a heating temperature of 600 ° C. Thereby, the bonding material 5 is melted and the P-type and N-type thermoelectric elements 3 and 4 and the lower electrode 2 are coupled.
[0029]
After that, as shown in FIG. 3A, the thermoelectric element placement jig 13 is removed, and as shown in FIG. 3B, the upper insulating substrate placement jig 14 is installed. As shown in FIG. 3 (c), holes 7a and 8a are formed in the upper insulating substrate 7 and the upper electrode 8 so as to communicate with each other by the number corresponding to the number of P-type and N-type thermoelectric elements 3 and 4. An upper insulating substrate 7 having an upper electrode 8 on the upper surface is prepared.
[0030]
Thereafter, as shown in FIG. 3D, the upper insulating substrate 7 is placed on the jig 14, and the upper ends of the P-type and N-type thermoelectric elements 3 and 4 are inserted into the holes 7a and 8a. After that, as shown in FIG. 4A, the bonding material 10 is disposed on the upper surface portion of the upper electrode 8, and the bonding material 10 is bonded to the upper end surfaces of the P-type and N-type thermoelectric elements 3 and 4. Next, this is heated in a reflow furnace (not shown) to melt the bonding material 10, whereby a thermoelectric module as shown in FIG. 4B can be obtained.
[0031]
As described above, the holes 7 a and 8 b communicating with the upper insulating substrate 7 and the upper electrode 8 are provided, and the upper ends of the thermoelectric elements 3 and 4 are inserted into the holes 7 a and 8 b to be joined to the upper electrode 8. Therefore, even if the insulating substrate 7 is warped or the heights of the thermoelectric elements 3 and 4 are varied, the junction yield between the thermoelectric elements 3 and 4 and the electrode 8 can be improved.
[0032]
Moreover, since the reliability after joining of the thermoelectric elements 3 and 4 and the electrode 8 can also be improved, it has the yield and reliability excellent compared with the conventional thermoelectric element module. Further, since the upper electrode 8 is disposed on the outer surface side of the upper insulating substrate 7, inspection and defect correction are facilitated, and the yield of products can be greatly improved.
[0033]
In addition, the wiring taken out from the thermoelectric element module can be taken out from the upper electrode 8 or the insulating substrate 7 of the upper insulating substrate 7, but can be taken out from an arbitrary place by wiring on the upper insulating substrate 7 according to the use. .
Furthermore, by using the upper insulating substrate 7 on the heat dissipation or cooling side, it is possible to improve the bonding reliability of the wiring taken out from the thermoelectric element module.
[0034]
FIG. 5 is a block diagram showing a thermoelectric element module according to the second embodiment of the present invention.
In addition, the same code | symbol is attached | subjected about the part same as the part shown in the above-mentioned 1st Embodiment, and the description is abbreviate | omitted.
In the second embodiment, the upper electrode 18 provided on the upper insulating substrate 7 includes an upper electrode portion 18 a provided on the upper surface side of the upper insulating substrate 7 and a lower electrode provided on the lower surface side of the upper insulating substrate 7. A portion 18b and a through-hole electrode portion 18c that connects the upper electrode portion 18a and the lower electrode portion 18b via the hole portion 7a of the upper insulating substrate 7 are configured. The upper ends of the P-type and N-type thermoelectric elements 3 and 4 are inserted into the through-hole electrode portion 18 c and joined to the upper electrode 18.
[0035]
Next, the manufacturing method of this thermoelectric element module is demonstrated based on FIG.
Since the manufacturing process in the second embodiment is partly in common with the manufacturing process described in the first embodiment, common parts are omitted and only different parts are described.
[0036]
That is, the manufacturing steps from FIG. 2 to FIG. 3B shown in the first embodiment are common. Therefore, description will be made after the manufacturing process shown in FIG.
First, as shown in FIG. 6A, an upper insulating substrate 7 on which an upper electrode 18 is formed is prepared. The upper electrode 18 has upper and lower electrode portions 18 a and 18 b formed on the upper and lower surfaces of the upper insulating substrate 7 and is formed along the inner peripheral surface of the hole 7 a of the upper insulating substrate 7. And a through-hole electrode portion 18c for connecting the upper and lower electrode portions 18a and 18b.
[0037]
The upper insulating substrate 7 having the upper electrode 18 configured as described above is disposed on the jig 14 as shown in FIG. 6B, and P-type and N-type are formed in the through-hole electrode portion 18c of the upper electrode 18. The upper ends of the thermoelectric elements 3 and 4 are inserted. Next, the bonding material 10 is disposed on the upper surface portion of the upper electrode 8, and the bonding material 10 is bonded to the upper end surfaces of the P-type and N-type thermoelectric elements 3 and 4. Next, this is heated in a reflow furnace (not shown) to melt the bonding material 10 to obtain a thermoelectric module as shown in FIG.
[0038]
According to the second embodiment, the same effects as in the first embodiment can be obtained, and the warp of the insulating substrate 7 and the height of the thermoelectric elements 3 and 4 may vary. Therefore, it is possible to further significantly reduce the bonding failure due to the dispersion of the members.
[0039]
FIG. 7 is a cross-sectional view showing a thermoelectric element module according to a third embodiment of the present invention, and FIG. 8 is a plan view thereof.
This thermoelectric element module has upper and lower insulating substrates 21 and 22 that face each other at a predetermined interval, and these insulating substrates 21 and 22 are made of a material having high thermal conductivity such as ceramic. Yes. In addition, upper and lower electrodes 23 and 24 are formed on the opposing surfaces of the upper and lower insulating substrates 21 and 22, respectively, and outer frame installation portions 19 and 20 are provided.
[0040]
P-type and N-type thermoelectric elements 25 and 26 are interposed between the upper and lower electrodes 23 and 24. The upper electrode 23 and the upper ends of the P-type and N-type thermoelectric elements 25 and 26 are joined by a joining material 5 such as A1-12 wt% Si, and the lower electrode 24 and the P-type and N-type thermoelectric elements 25 and 26 are joined. For example, the lower end of each of the two is joined by solder 45.
[0041]
In addition, an outer frame 28 as a frame member made of, for example, Al is disposed between the upper and lower outer frame installation portions 19 and 20. The upper and lower outer frame setting portions 19 and 20 and the upper and lower end portions of the outer frame 28 are bonded together by a bonding material 27 such as A1-12 wt% Si. Thus, the P-type and N-type thermoelectric elements 3 and 4 are sealed by the upper and lower insulating substrates 21 and 22 and the outer frame 28.
[0042]
Further, for example, an opening 22a having an inner diameter of 3 mm is formed on one side of the lower insulating substrate 22, and the opening 22a is closed by a copper lid 29 as a closing member. The lid 29 is made of, for example, copper, and is bonded with an adhesive 30 such as epoxy, and the inside of the outer frame 28 is in a non-oxidized reduced pressure atmosphere state such as nitrogen.
[0043]
The bonding of the upper and lower electrodes 23 and 24 and the P-type and N-type thermoelectric elements 25 and 26 is not limited to the bonding material 5 and the solder 45, and Cu or Ag may be used.
In addition, the connection method is brazing, but in other cases, there is no particular problem as long as the predetermined performance of the module can be obtained even by solid phase bonding, sintering, mechanical fastening, or the like.
The P-type and N-type thermoelectric elements 25 and 26 are connected in series via upper and lower electrodes 23 and 24, with the upper insulating substrate 21 serving as a heat absorbing surface and the lower insulating substrate 22 serving as a heat radiating surface.
As shown in FIG. 8, the lower electrode 24 formed on the surface of the lower insulating substrate 22 and the lead wire 41 connected to the outside penetrate between the outer frame 28 and the substrate 22 and are exposed to the outside of the module. I have to. The lead wire 41 and the outer frame 28 are insulated.
[0044]
Next, a method for manufacturing a thermoelectric element module will be described with reference to FIG.
First, as shown in FIG. 9A, the upper electrode 23 is formed on the upper insulating substrate 21 and the outer frame installation portion 19 is provided. Next, as shown in FIG. 9B, a bonding material 27 such as A1-Si is supplied onto the upper electrode 23 and the outer frame installation portion 19, and P-type and N-type are formed on the bonding material 27. The thermoelectric elements 25 and 26 are arranged using a jig (not shown) and the outer frame 28 is arranged.
[0045]
Next, the upper insulating substrate 21 is heated to about 600 ° C. in a non-oxidizing atmosphere furnace such as a hydrogen furnace or a nitrogen furnace to melt the bonding material 27, so that the P-type and N-type thermoelectric elements 25, 26 and the upper While joining the electrode 23, the outer frame 28 and the outer frame installation part 19 are joined.
[0046]
Thereafter, as shown in FIG. 9C, a lower electrode 24 is provided on the lower insulating substrate 22, an outer frame installing portion 20 for installing the outer frame 28 is provided, and one side of the lower insulating substrate 22 is further provided. In the part, for example, an opening 22a having an inner diameter of 3 mm is formed.
[0047]
After that, the solder paste 45 is supplied onto the lower electrode 24 and the outer frame installation part 20, and the thermoelectric elements 25 and 26 provided on the upper insulating substrate 21 are arranged on the lower electrode 24, and the outer frame 28 is attached to the outer frame. It arrange | positions on the installation part 20. FIG.
[0048]
After this arrangement, the module is heated to the melting point of the solder paste 45 or higher, and the lower electrode 24 and the thermoelectric elements 25 and 26 are joined together, and the outer frame 28 and the outer frame installation part 20 are joined.
Next, as shown in FIG. 9 (d), a lid 29 is made to face the opening 22 a of the lower insulating substrate 22, and this is placed in the nitrogen furnace 51, and the inside of the module is removed from the opening 22 a of the lower insulating substrate 22. A non-oxidizing reduced pressure atmosphere such as After that, the opening 22 a is closed by melting the adhesive 30 such as epoxy adhered to the lid 29 by being heated by the heater 52 and fixing the lid 29 to the lower insulating substrate 22.
[0049]
According to this embodiment, the P-type and N-type thermoelectric elements 25 and 26 are sealed by the upper and lower insulating substrates 21 and 22 and the outer frame 28, that is, the upper and lower insulating substrates 21 and 22. As a sealing member, it is difficult to break during the manufacturing process, and it is possible to manufacture a highly reliable thermoelectric module with high yield that can prevent oxidation of the thermoelectric elements 25 and 26 and suppress deterioration of the characteristics. it can.
[0050]
In this embodiment, the inside of the module is not depressurized and a non-oxidized decompression atmosphere is used. However, the present invention is not limited to this, and the inside of the module may be decompressed and then a non-oxidation decompression atmosphere.
[0051]
【The invention's effect】
As described above, the present invention can improve the junction yield between the thermoelectric element and the electrode even when the insulating substrate is warped or when the height of the thermoelectric element varies.
[0052]
Moreover, since the reliability after joining of a thermoelectric element and an electrode can also be improved, it has the yield and reliability outstanding compared with the conventional thermoelectric element module.
Furthermore, since the thermoelectric element is sealed by the insulating substrate and the frame material, a highly reliable thermoelectric element module that is difficult to break during the manufacturing process, prevents oxidation of the thermoelectric element, and can suppress deterioration of its characteristics. It can be manufactured with good yield.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram showing a thermoelectric element module according to a first embodiment of the present invention.
FIG. 2 is a view showing a manufacturing process of the thermoelectric element module of FIG. 1;
FIG. 3 is a view showing a manufacturing process of the thermoelectric element module of FIG. 1;
4 is a view showing a manufacturing process of the thermoelectric element module of FIG. 1;
FIG. 5 is a schematic configuration diagram showing a thermoelectric element module according to a second embodiment of the present invention.
6 is a view showing a manufacturing process of the thermoelectric element module of FIG. 5;
FIG. 7 is a schematic configuration diagram showing a thermoelectric element module according to a third embodiment of the present invention.
8 is a plan view showing the thermoelectric element module of FIG. 7. FIG.
9 is a view showing a manufacturing process of the thermoelectric element module of FIG. 7;
FIG. 10 is a configuration diagram showing a conventional thermoelectric module.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1,7 ... 1st and 2nd insulated substrate 2,8 ... 1st and 2nd electrode 3,4 ... P type and N type thermoelectric element 7a, 8a ... Hole 18 ... 2nd electrode 18c ... Through Hall electrode portions 21, 22 ... first and second insulating substrates 22a ... openings 23, 24 ... first and second electrodes,
25, 26 ... P-type and N-type thermoelectric elements 28 ... Frame (outer frame)
29 ... Lid (closing member)

Claims (4)

A first insulating substrate provided with a plurality of first electrodes;
A second insulating substrate disposed opposite to the first insulating substrate and provided with a plurality of second electrodes;
The first electrode and the substrate-side holes are provided in at least one of the second to front Symbol first so as to communicate with the electrode side hole portion provided in at least one of the electrodes of the insulating substrate and the second insulating substrate A through-hole electrode part formed on the inner peripheral surface of the part,
A P-type thermoelectric element disposed between the first insulating substrate and the second insulating substrate, having one end joined to the first electrode and the other end joined to the second electrode;
It is disposed between the first insulating substrate and the second insulating substrate, and one end is joined to the first electrode and the other end is joined to the second electrode to electrically connect to the P-type thermoelectric element. An N-type thermoelectric element connected in series to
At least one end portion of the P-type thermoelectric element and the N-type thermoelectric element is inserted into the through-hole electrode portion and joined to at least one of the first electrode and the second electrode. Thermoelectric element module.   The thermoelectric element module according to claim 1, wherein the electrode provided on the insulating substrate having the through-hole electrode portion is disposed outside the other insulating substrate.   When a through-hole electrode portion is formed only on one of the first insulating substrate and the second insulating substrate, the insulating substrate on the side where the through-hole electrode portion is formed is used on the heat dissipation side. Therefore, the P-type thermoelectric element and the N-type thermoelectric element are arranged. Bonding one end of a P-type thermoelectric element to a first insulating substrate on which a plurality of first electrodes are disposed;
Bonding one end of an N-type thermoelectric element to the first electrode in a state adjacent to the P-type thermoelectric element;
A second insulation having a second electrode formed on the surface and a through-hole electrode portion formed on the inner peripheral surface of the substrate-side hole portion provided to communicate with the electrode-side hole portion of the second electrode The other end portions of the P-type thermoelectric element and the N-type thermoelectric element are arranged opposite to each other on the substrate, the other end portion is inserted into the through-hole electrode portion, and the other end portion and the second electrode are connected. Electrically bonding, and
The manufacturing method of the thermoelectric element module characterized by comprising.

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