JP3930183B2 - CVD apparatus and method for manufacturing magnetic recording medium - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a CVD apparatus and a method for manufacturing a magnetic recording medium, and more specifically, a hot filament-plasma CVD (plasma enhanced chemical vapor deposition) apparatus suitable for forming a film containing carbon as a main component, and a manufacturing method using the apparatus. The present invention relates to a method for manufacturing a magnetic recording medium using a film method.
[0002]
[Prior art]
A hot filament-plasma CVD (F-pCVD) apparatus converts a film-forming raw material gas into a plasma state by discharge between a filament-shaped cathode and an anode heated under vacuum conditions in a film-forming chamber, and generates a negative potential. This is an apparatus for forming a film by accelerating and colliding the plasma with the substrate surface. Both the cathode and the anode are made of metal, but metals such as tungsten and tantalum are usually used for filamentary cathodes. According to this apparatus, it is possible to form a carbon (C) film, a silicon (Si) film, a nitrogen (N) film or the like according to the type of film forming source gas.
[0003]
In the case of forming a film containing carbon as a main component, the film forming method using the F-pCVD apparatus has advantages such as easy handling because a carbon-containing monomer (liquid) can be used. Therefore, this film-forming method is particularly attracting attention as a means for forming a protective layer of a magnetic recording medium, and the protective layer made of the above-described film obtained by this film-forming method has a thin film region as compared with a sputtered film. High durability.
[0004]
[Problems to be solved by the invention]
By the way, in the case of a conventional F-pCVD apparatus in which a ring-shaped anode is arranged at a position facing the cathode, a large electric power is supplied to the cathode to increase the amount of emitted thermoelectrons, that is, a high plasma current. There is a drawback that it is difficult to form and therefore a sufficient film forming speed cannot be obtained.
[0005]
The present invention has been made in view of the above circumstances, and an object of the present invention is to improve the thermal filament-plasma CVD apparatus so that a high film forming speed can be obtained, and the magnetic recording using the film forming method by the film forming apparatus. It is to provide a method for manufacturing a medium.
[0006]
[Means for Solving the Problems]
As a result of various studies, the present inventors have obtained the knowledge that the above object can be easily achieved by using an anode having a specific structure to increase the area.
[0007]
The present invention has been completed on the basis of the above-mentioned knowledge. The first gist of the present invention is that a film-forming raw material gas is discharged by discharge between a filamentary cathode and an anode heated under vacuum conditions in the film-forming chamber. In a hot filament-plasma CVD apparatus, a funnel is formed in at least one position facing the substrate in the film forming chamber. Ri formed by arranging an anode having a shape, the anode of which surrounds the cathode in the vicinity of the center portion of the peripheral surface and a hot filament, characterized that you have toward the maximum inner diameter side to the substrate - a plasma CVD apparatus Exist.
[0008]
The second gist of the present invention is a method for manufacturing a magnetic recording medium in which a protective layer mainly composed of carbon is formed after forming at least a magnetic layer on a nonmagnetic substrate. The present invention resides in a method for manufacturing a magnetic recording medium, wherein a protective layer is formed.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a conceptual explanatory diagram of an example of the F-pCVD apparatus of the present invention. The F-pCVD apparatus shown in FIG. 1 is an apparatus capable of forming films on both sides of a substrate at the same time. The F-pCVD apparatus has a bilaterally symmetric configuration, but a part of the right side configuration is not shown for convenience. .
[0010]
First, the F-pCVD apparatus of the present invention will be described. As described above, the F-pCVD apparatus of the present invention basically puts a film-forming source gas into a plasma state by discharge between a filament-shaped cathode and an anode heated under vacuum conditions in the film-forming chamber, The film is formed by accelerating and colliding the plasma with the surface of the substrate by a negative potential. The F-pCVD apparatus shown in FIG. 1 has the following configuration.
[0011]
The cylindrical film forming chamber (1) is configured to be airtight by a vacuum chamber wall (5) formed of a conductor, and the vacuum chamber wall (5) is connected to a connecting pipe ( 6), a transfer case provided with a transfer case vacuum exhaust unit and a duct provided with a film forming chamber vacuum exhaust unit (both not shown) are connected. An elevating arm (15) is arranged inside the connecting pipe (6), and the elevating arm (15) is operated by a handling robot (not shown) arranged inside a transfer case (not shown). Is done. The vacuum evacuation unit for the transfer case and the vacuum evacuation unit for the film forming chamber are always in operation during the film forming operation.
[0012]
The cathode (2) is formed at the tip of two sockets (7) penetrating from the side of the vacuum chamber wall (5) into the film forming chamber (1) and connected to an AC cathode power source (8). ing. The anode (3) has a special funnel shape and is arranged at a position surrounding the cathode (2) in the vicinity of the center of the inner peripheral surface thereof. This will be described in detail in the features of the present invention described later. The anode (3) is connected to an anode power source (10) (a positive potential current on the anode (3) side) through a socket (9) arranged in the same manner as the socket (7). The surface of the socket (7) is preferably roughened by metal spraying or the like in order to prevent the attached carbon film from peeling off.
[0013]
The socket (7) and the socket (9) are configured as an electrically insulating airtight body with respect to the vacuum chamber wall (5). The anode (3) is fixed to the inner peripheral surface of the vacuum chamber wall (5) by an electrically insulating fixing means (not shown). Examples of such fixing means include means for connecting each mounting piece protruding from the inner peripheral surface of the vacuum chamber wall (5) and the outer peripheral surface of the anode (3) via an insulating material.
[0014]
A cylindrical deposition preventing member (shielding member) (11) is disposed inside the film forming chamber (1) as a preferred embodiment. The adhesion preventing member (11) is fixed to the inner peripheral surface of the vacuum chamber wall (5) by an electrically insulating fixing means (not shown). Further, a rectifying portion (12) having an outer diameter that is inclined inward and smaller than the maximum inner diameter (tip inner diameter) of the anode (3) is provided at the peripheral end of the adhesion preventing member (11) on the anode (3) side. A gas flow path (13) is formed between the tip of the anode (3) and the rectification unit (12).
[0015]
A film-forming source gas diluted to an appropriate concentration with an inert gas as necessary is supplied from a film-forming source gas supply pipe (14) penetrating from the upper part of the vacuum chamber wall (5) to the vicinity of the gas flow path (13). Supplied.
[0016]
The disc-shaped substrate (4) is vertically supported by a support claw (16) fixed to the tip of the elevating arm (15). That is, the substrate (4) is held at a position facing the cathode (2) and the anode (3). Then, when the substrate (4) is carried into the film forming chamber (1) by the lifting arm (15), a soft seal (not shown) arranged at the connection portion between the connection pipe (6) and the transfer case. Comes into contact with the lifting arm (15), so that the film forming chamber (1) and the transfer case are substantially cut off. The vacuum state in the film forming chamber (1) is continuously maintained by the film forming chamber vacuum exhaust unit.
[0017]
A film thickness correction plate (17) is disposed on both sides of the support position of the substrate (4) as a preferred mode. When the substrate (4) is disk-shaped, the outer peripheral portion and the central portion tend to form a thin film, and the left and right plasmas affect each other when forming the film on both sides of the substrate (4) simultaneously. It becomes a suitable area. The film thickness correction plate (17) has a donut shape that covers the center and outer periphery of the disc-shaped substrate (4), and the thickness of the thin film formed is uniform over the entire substrate (4). It has a function to make.
[0018]
The outer peripheral portion of the film thickness correcting plate (17) is fixed to the end portion of the deposition preventing member (11), and the inner peripheral portion (17a) is supported by a support arm (18) provided on the outer peripheral portion. As a result, the film thickness correction plate (17) is in an electrically insulating state with respect to the inner peripheral surface of the vacuum chamber wall (5), like the adhesion preventing member (11). That is, the film thickness correction plate (17) is electrically floated and maintained in an independent state (float potential) together with the deposition preventing member (11).
[0019]
A cooling water circulation path (19) is provided inside the vacuum chamber wall (5) in the vicinity of the anode (3) side to prevent abnormal heating of the vacuum chamber wall (5), and cooling is performed from the cooling water supply pipe (20). Water is supplied.
[0020]
One end of the cathode power supply (8) is connected to the ground (21), and the vacuum chamber wall (5) is connected to the ground (22). The ground side of the cathode power source (8) and the substrate (4) are connected by a DC ion acceleration power source (23) having a negative potential on the substrate (4) side.
[0021]
Usually, 0 to 20 v (0 to 50 A) for the cathode power source (8), 0 to 200 v (0 to 5000 mA) for the anode power source (10), and 0 to 1500 v (0 to 200 mA) for the ion acceleration power source (23). ) Applies. During the film forming operation, the cathode (2) is always energized and heated.
[0022]
The F-pCVD apparatus according to the present invention is characterized in that the anode (3) having a funnel shape is arranged at least at one position facing the substrate (4) in the film forming chamber (1). Exist. That is, the anode (3) whose area is increased by the specific structure as described above sufficiently captures these thermoelectrons when the cathode (2) is supplied with a large electric power to increase the amount of emitted thermoelectrons. High plasma current is formed and the film forming speed is increased.
[0023]
Further, Oite this onset bright, as described above, the anode (3) is disposed at a position surrounding the cathode (2) in the vicinity of the center portion of the inner peripheral surface thereof. According to such an aspect, the anode (3) is heated by the radiant heat of the cathode (2), and is maintained at a temperature of 450 ° C. or higher. As a result, the following effects can be achieved. That is, the carbon film adhered to the surface of the anode (3) by the carbon-containing monomer gas causes a thermal change that is presumed to be graphitized. Accordingly, the decrease in the conductivity of the anode (3) is suppressed, and the discharge state between the cathode (2) and the anode (3) is stabilized as compared with the state where there is no thermal change as described above.
[0024]
In the F-pCVD apparatus of the present invention configured as described above, the discharge state between the cathode and the anode does not become unstable over time when continuously forming a film mainly composed of carbon. It is suitably used when forming a film containing carbon as a main component.
[0025]
The continuous film formation method using the F-pCVD apparatus of the present invention mainly includes operations of carrying in the substrate (4) into the film formation chamber (1), film formation, and carrying out the substrate (4) as follows. Are sequentially repeated.
[0026]
First, the lifting arm (15) of the handling robot (not shown) is raised to carry the substrate (4) into the film forming chamber (1).
[0027]
Next, the film forming raw material gas is supplied from the film forming raw material gas supply pipe (14). Thereby, the film forming source gas flows into the film forming chamber (1) through the gas flow path (13). The above operation is called gas stabilization. Note that the pressure in the film forming chamber (1) at this time is determined by the capability of the vacuum evacuation unit for the film forming chamber described above.
[0028]
Next, predetermined potentials are applied to the anode (3) and the substrate (4) from the anode power source (10) and the ion acceleration power source (23), respectively. Thereby, a large amount of thermoelectrons are emitted from the cathode (2) always heated to a high temperature toward the anode (3), and glow discharge is started between both electrodes. Then, the thermoelectrons generated by the discharge ionize the film forming material gas into a plasma state. The film-forming raw material ions in a plasma state are accelerated by the negative potential of the substrate (4), collide with and adhere to the substrate (4), and a film containing carbon as a main component is formed. For example, when toluene is used, it is considered that the following reaction (I) occurs in the plasma region and the following reaction (II) occurs on the surface of the substrate (4).
[0029]
[Chemical 1]
C ₇ H ₈ + e − → C ₇ H ₈ ⁺ + 2e − (I)
C ₇ H ₈ ⁺ + e − → C ₇ H ₂ + 3H ₂ ↑ (II)
[0030]
Next, the supply of the film forming source gas is stopped to complete the film forming. Thereafter, the source gas remaining in the film forming chamber (1) is exhausted by the vacuum exhaust unit for the film forming chamber, and the pressure in the film forming chamber (1) is restored to the level before the supply of the source gas. After waiting, the lowering arm (15) is lowered to carry out the substrate (4) from the film forming chamber (1) to the transfer case.
[0031]
In the present invention, when a film containing carbon as a main component is formed, a carbon-containing monomer gas is used as the film forming raw material gas. Specific examples of the carbon-containing monomer include hydrocarbons such as methane, ethane, propane, ethylene, acetylene, benzene, and toluene, alcohols, nitrogen-containing hydrocarbons, fluorine-containing hydrocarbons, and the like. In particular, benzene, toluene or pyrrole is preferably used. If necessary, the inert gas used for the concentration adjustment and quality regulation of carbon-containing _{monomers, Ar, He, H 2,} N 2, O 2 , and the like.
[0032]
Next, a method for manufacturing the magnetic recording medium of the present invention will be described. The present invention is characterized in that, in a method for manufacturing a magnetic recording medium in which a protective layer mainly composed of carbon is formed after forming at least a magnetic layer on a nonmagnetic substrate, the protective layer is formed by the film forming method using the above-described apparatus. In the point.
[0033]
As the nonmagnetic substrate, an Al alloy plate provided with a Ni-P layer by an electroless plating method is usually used, but other metal substrates such as Cu and Ti, glass substrates, ceramic substrates, carbonaceous substrates or resins A substrate or the like can also be used.
[0034]
The magnetic layer, that is, the ferromagnetic metal thin film layer is formed by a method such as electroless plating, sputtering, or vapor deposition. Specific examples of the magnetic layer include Co—P, Co—Ni—P, Co—Ni—Cr, Co—Cr—Ta, Co—Ni—Pt, Co—Cr—Pt, and Co—Cr—Pt—Ta series. Examples include ferromagnetic metal thin films such as alloys. The thickness of the magnetic layer is usually about 10 to 70 nm. Further, a plurality of magnetic layers can be formed as necessary.
[0035]
Examples of other layers formed on the nonmagnetic substrate include an underlayer and an intermediate layer provided between the nonmagnetic substrate and the magnetic layer. As the underlayer, a Cr layer having a thickness of 5 to 200 nm formed by sputtering is usually used. The material of the intermediate layer provided on the underlayer is appropriately selected from known materials.
[0036]
In the present invention, the protective layer is usually provided on the surface of the magnetic layer, but may be provided via another layer as necessary. Further, a lubricating layer such as perfluoropolyether, higher fatty acid or metal salt thereof is usually formed on the surface of the protective layer.
[0037]
【Example】
EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to a following example, unless the summary is exceeded.
[0038]
In the following examples, a magnetic recording medium having a carbon film as a protective layer was continuously produced. When forming the protective layer, the F-pCVD apparatus shown in FIG. 1 was used. Further, a Ni-P plating-coated Al alloy disk substrate having a surface average roughness of 1.5 nm and a diameter of 3.5 inches was used as the substrate. And after performing mechanical texture processing (surface treatment) so that surface roughness might be set to 1.0 nm on a board | substrate, laser texture was given and used for the CSS zone.
[0039]
Example 1
First, a Cr underlayer (thickness 40 nm) and a Co alloy magnetic layer (thickness 30 nm) were formed by sputtering at a substrate temperature of 240 ° C.
[0040]
Next, using the F-pCVD apparatus shown in FIG. 1 (area of the anode (3): about 18000 mm ² ), using toluene gas as the film forming raw material gas, carrying in gas-stabilization-film formation-exhaust-export A series of operations were repeated to form a C protective layer (thickness 4 nm). At this time, the amount of water in the cooling water supply pipe (20) was adjusted so that the surface temperature of the anode (3) was about 500 ° C.
[0041]
In the film forming operation, the temperature of the substrate (4) is 200 ° C., the supply amount of toluene is 3.5 SCCM (the number of CCs per minute under standard conditions), and the pressure in the film forming chamber (1) is 0.1 Pa. The cathode power supply (8) is adjusted so that the applied voltage of the anode (3) is 75 V, the plasma current is 1500 mA, and the bias voltage is applied to the ion acceleration power supply (23) so that the potential difference is 400 V. For 2.5 seconds.
[0042]
However, before the above film formation, toluene was allowed to flow into the film formation chamber (1) at a supply rate of 75 SCCM (number of CCs per minute under standard conditions), the pressure was set to 0.2 Pa, and no discharge was performed. Then, a voltage was gradually applied to the cathode power source (8) so that the maximum power was 100 W higher than the normal film forming conditions, and the cathode (2) was carbideized for 1 hour.
[0043]
Next, a perfluoropolyether liquid lubricant was applied to the surface of the C protective layer with a thickness of 2 nm to obtain a magnetic recording medium.
[0044]
Through the above continuous operation, 50,000 magnetic recording media were continuously produced. The tact time of the film forming operation was 2.5 seconds.
[0045]
Comparative Example 1
In Example 1, a conventional F-pCVD apparatus (area of the anode (3): about 300 mm ² ) in which a ring-shaped anode is arranged at a position facing the cathode is used as a film forming apparatus for the C protective layer. In the same manner as in Example 1, a magnetic recording medium was continuously produced. However, although the voltage applied to the anode (3) was 75 V, the cathode power source (8) could only be increased until the plasma current reached about 500 mA. As a result, the tact time of the film forming operation was 6.0 seconds.
[0046]
【The invention's effect】
According to the present invention described above, a hot filament-plasma CVD apparatus improved so as to obtain a high film forming speed and a method for manufacturing a magnetic recording medium using the film forming method by the film forming apparatus are provided. The industrial value of the invention is great.
[Brief description of the drawings]
FIG. 1 is a conceptual explanatory diagram of an example of an F-pCVD apparatus according to the present invention.
1: Film forming chamber 2: Cathode 3: Anode 4: Substrate 5: Vacuum chamber wall 6: Connection pipe 7: Socket 8: Cathode power source 9: Socket 10: Anode power source 11: Adhering member 12: Rectifier 13: Gas flow Channel 14: Film forming raw material gas supply pipe 15: Lifting arm 16: Support claw 17: Film thickness correction plate 17a: Inner peripheral portion 18 of film thickness correction plate: Support arm 19: Cooling water circulation path 20: Cooling water supply pipe 21: Earth 22: Earth 23: Ion acceleration power supply

Claims (2)

The film-forming raw material gas is brought into a plasma state by discharge between the filament-shaped cathode and anode heated under vacuum conditions in the film-forming chamber, and the above plasma is accelerated and collided with the substrate surface by a negative potential. to, hot filament - in a plasma CVD apparatus, Ri formed by arranging an anode having a funnel-like shape at least one of the position opposite to the film-forming chamber of the substrate, the anode, near the center of the inner peripheral surface thereof in hot filaments surrounding the cathode and a maximum inner diameter side, characterized that you have toward the substrate - the plasma CVD apparatus. 2. The method of manufacturing a magnetic recording medium in which a protective layer mainly composed of carbon is formed after forming at least a magnetic layer on a nonmagnetic substrate, wherein the protective layer is formed by a film forming method using an apparatus according to claim 1. A method of manufacturing a magnetic recording medium.

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