JP3880719B2 - Semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device including a semiconductor chip such as a laser diode.
[0002]
[Prior art]
Conventionally, a semiconductor device including a semiconductor chip having electrodes formed on the front side and the back side, and a structure in which the semiconductor chip is in contact with the base side on one electrode side and connected to the electrode terminal side on the other electrode side, Generally well known.
FIG. 10 shows an example of the internal structure of such a conventional semiconductor laser device. FIG. 11 is an enlarged view showing a semiconductor chip mounting structure in this conventional example. In this semiconductor laser device 70, a base 62 made of, for example, Fe formed in a block shape is provided on a disk-shaped base member 63 that supports each member. A laser diode chip 65 (hereinafter referred to as an LD chip) is attached to the wall surface 62a of the base 62 via a conductive submount member 64 made of, for example, Si, and the above-mentioned base is formed on one electrode 65A side. It is joined to the base 62. As can be clearly seen from FIG. 11, the base 62, the submount member 64, and the LD chip 65 are arranged such that their upper surfaces are flush with each other. In the semiconductor laser device 70, the upper surface of the LD chip 65 forms a laser emission surface from which laser light is emitted.
A flat electrode terminal 67 is provided adjacent to the LD chip 65 attached to the base 62. The electrode terminal 67 is electrically connected to the outer electrode 65B of the LD chip 65 using a wire 69.
[0003]
[Problems to be solved by the invention]
By the way, in the semiconductor laser device 70, when the base 62, the submount member 64 and the LD chip 65 are joined to each other, the LD chip 65 and the submount member 64, and the submount member 64 and the base are combined. 62 is bonded via a solder material (not shown) such as AuSi, AuSn, PbSn, or In (indium). In this bonding process, although it differs depending on the type of solder material used, it is generally 120. It is known to accompany a temperature rise to ˜350 ° C.
Due to the thermal history in this bonding process, stress (so-called heat) caused by the difference in linear thermal expansion coefficient between the LD chip 65 and the submount member 64 or between the LD chip 65 and the base 62 is obtained. Stress). When a certain amount of thermal stress is applied to the LD chip 65, if the LD chip 65 is energized, crystal defects grow during the energization, and the reliability of the apparatus cannot be sufficiently secured. For this reason, it has heretofore been desired to reduce or eliminate the thermal stress.
When the semiconductor laser device 70 is assembled, the base 62, the submount member 64 and the LD chip 65, and the electrode terminal 67 are sequentially soldered in separate steps in order to electrically connect them to each other. It is necessary to perform bonding using a material or a wire 69, and the number of assembling steps becomes complicated, which is disadvantageous in terms of manufacturing cost.
[0004]
The present invention has been made in view of the above technical problem, and provides a semiconductor device having a structure capable of easily and quickly mounting a semiconductor chip without causing a temperature rise that causes thermal stress to the semiconductor chip. With the goal.
[0005]
[Means for Solving the Problems]
Therefore, according to a first aspect of the present invention, in a semiconductor device in which a semiconductor chip having electrodes formed on the front side and the back side is disposed on one side of the base member, the base is erected on the base member; A conductive submount member attached to the wall surface of the base, and an electrode terminal having an arm portion that is close to or in contact with the outer surface of the submount member and curves in the direction of the base and the submount member. The semiconductor chip is Due to the elastic force of the arm part, It is sandwiched between the electrode terminal and the outer surface of the submount member, and one electrode abuts on the base side, and the other electrode is electrically connected to the electrode terminal side. .
[0006]
According to a second aspect of the present invention, a layered portion having a Young's modulus smaller than the Young's modulus of the submount member, the electrode terminal, and the semiconductor chip is provided on at least one electrode side of the semiconductor chip. It is a feature.
[0007]
Further, the third invention of the present application is characterized in that a groove portion having a predetermined width in which the semiconductor chip can be fitted is provided on the outer surface of the submount member.
[0008]
Furthermore, the fourth invention of the present application is characterized in that a concave portion into which the semiconductor chip can be fitted is provided on the outer surface of the submount member.
[0009]
According to a fifth aspect of the present invention, there is provided a semiconductor device in which a semiconductor chip having electrodes formed on the front side and the back side is disposed on one side of a base member, and a base stand erected on the base member, and a wall surface of the base An electrode terminal provided with an arm portion that is close to or abuts and is curved in the direction of the base, and the semiconductor chip is Due to the elastic force of the arm part, It is sandwiched between the electrode terminal and the wall surface of the base, and one electrode abuts on the base side, and the other electrode is electrically connected to the electrode terminal side.
[0010]
The sixth invention of the present application is characterized in that a layered portion having a Young's modulus smaller than the Young's modulus of the base, the electrode terminal, and the semiconductor chip is provided on at least one electrode side of the semiconductor chip. It is what.
[0011]
Further, the seventh invention of the present application is characterized in that a groove portion having a predetermined width in which the semiconductor chip can be fitted is provided on a wall surface of the base.
[0012]
Furthermore, the eighth invention of the present application is characterized in that a concave portion into which the semiconductor chip can be fitted is provided on a wall surface of the base.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.
Embodiment 1 FIG.
FIG. 1 shows an internal structure of a semiconductor laser device 10 according to the first embodiment of the present invention. In the semiconductor laser device 10, a pn junction laser diode chip (hereinafter referred to as an LD chip) 5 having electrodes formed on the front side and the back side is used. In order to cause laser oscillation by causing a forward current to flow through the LD chip 5, it is necessary to attach external electrodes to each electrode. In this semiconductor laser device 10, a disk-shaped base member 3 is used as one external electrode. A base 2 made of Fe is integrally formed at a predetermined position above. The base 2 is formed in a block shape and is also used as a heat radiator for the LD chip 5. A conductive submount member 4 is joined to the wall surface 2 a of the base 2. As the other external electrode, a flat metal electrode terminal 7 is provided adjacent to the base 2 and the submount member 4. In this configuration, the LD chip 5 is disposed between the electrode terminal 7 and the submount member 4. The base 2 and the electrode terminal 7 are further connected to an external terminal 11 extending downward from the base member 3, and a voltage is applied between the external terminals 11 when the LD chip 5 is energized.
Further, in this semiconductor laser device 10, a cap 12 which is welded at the peripheral edge of the base member 3 and surrounds each member is attached as means for protecting each member provided on the base member 3 from the external environment. The cap 12 includes a laser light transmitting window 12a opened on the upper surface side, and an optical glass 13 is attached to the window 12a.
[0014]
2 and 3 are an enlarged perspective view and an enlarged plan view showing the mounting structure of the LD chip 5, respectively. 2, the submount member 4 and the LD chip 5 are attached to the wall surface 2a of the base 2 so that they are flush with each other on the upper surface side. In this state, one electrode (n-side electrode) 5A of the LD chip 5 is brought into contact with the base 2 via the submount member 4, and the other electrode (p-side electrode) 5B is The electrode terminal 7 is in direct contact with and electrically connected. In the semiconductor laser device 10, the upper surface of the LD chip 5 forms a laser emission surface from which laser light is emitted.
[0015]
In this embodiment, the electrode terminal 7 is provided with an arm portion 7a having a predetermined length extending in the vicinity of the outer surface of the submount member 4 on one end side, and is fixed to the base member 3 on the other end side. It is provided in a so-called cantilever type. As can be clearly understood from FIG. 3, the arm portion 7 a is formed to bend in the direction of the base 2 and the submount member 4. With this shape, the arm portion 7 a can abut against the LD chip 5 on the outer surface thereof, and urge the LD chip 5 against the submount member 4.
It should be noted that the shape of the arm portion 7a is such that when the LD chip 5 is attached, the arm portion 7a has a sufficient elastic force to hold the LD chip 5 between the arm portion 7a and the submount member 4. Any shape may be used.
[0016]
In the assembly process of the semiconductor laser device 10 having such a configuration, the submount member 4 is bonded to the wall surface 2a of the base 2 at a temperature of about 350 ° C. using an AuSn solder material. In order to attach the LD chip 5, after cooling it to room temperature, the LD chip 5 is slid between the arm part 7 a and the submount member 4 from the distal end side (the phantom line in FIG. 3) of the arm part 7 a. To a predetermined position (solid line in FIG. 3). Since the arm portion 7a is curved in the direction of the submount member 4, when the movement is completed, the LD chip 5 is pressed against the outer surface 4a of the submount member 4, and the submount member 4 It is sandwiched between the arm portion 7a. In this state, the LD chip 5 is in contact with the base 2 side via the submount member 4 with the n-side electrode 5A, and is pressed against the arm portion 7a with the p-side electrode 5B. Electrical connection to terminal 7.
[0017]
As described above, in the semiconductor laser device 10, the electrode terminal 7 can directly hold the LD chip 5 by the arm portion 7 a having a predetermined elastic force. In addition, the electrodes 5A and 5B formed on the back side can be electrically connected to the base 2 and the electrode terminal 7, respectively. According to the mounting structure of the LD chip 5, it is not necessary to perform a process involving a temperature rise such as soldering on the LD chip 5, so that no thermal stress is applied to the LD chip 5, and the semiconductor laser device 10. At the time of assembly, the reliability of the semiconductor laser device 10 can be sufficiently ensured.
Further, by using the mounting structure of the LD chip 5, it is necessary to perform soldering or wire bonding between the submount member 4 and the LD chip 5 and between the LD chip 5 and the electrode terminal 7. As a result, the number of assembly steps of the semiconductor laser device 10 is reduced. Further, since the solder material and the wire are not necessary, the cost can be reduced.
[0018]
In the above embodiment, although not particularly illustrated, the LD chip 5 includes a p-side electrode 5B in addition to a basic structure including an AuGe / Ni / Au n-side electrode 5A and a Ti / Pt / Au p-side electrode 5B. On top of this, In (indium), which is a metal having a smaller Young's modulus than the material constituting the submount member 4, the arm portion 7a and the LD chip 5, is applied in a thickness of several μs or several tens μm. What was formed in was used. Accordingly, when the LD chip 5 is slid and moved between the arm portion 7a and the submount member 4, the frictional force acting between the arm portion 7a and the LD chip 5 is absorbed, and Damage to the LD chip 5 is suppressed.
In this embodiment, the layered portion of metal In is provided only on the p-side electrode 5B, but such a layered portion may be provided on both the p-side and n-side electrodes 5A and 5B. In this case, since the friction force acting between the submount member 4 and the LD chip 5 can be absorbed, the LD chip 5 can be protected more reliably. The conductive material used for the layers formed on the electrodes 5A and 5B of the LD chip 5 is not limited to the metal In, and any material can be used as long as the influence of the frictional force on the LD chip 5 can be reduced. There may be.
[0019]
Further, as shown in FIG. 4 a, a groove portion 16 into which the LD chip 5 can be fitted may be provided on the side surface 14 a of the conductive submount member 14 attached to the base 2. FIG. 4 b shows a state in which the LD chip 5 is fitted into the groove 16. In this state, the LD chip 5 is pressed toward the submount member 14 by the arm portion 7a (not shown in FIG. 4b) of the electrode terminal 7, and is sandwiched between the arm portion 7a and the submount member 14. . Providing such a groove 16 facilitates positioning of the LD chip 5 when the LD chip 5 is attached, and prevents the LD chip 5 from being displaced laterally due to fine vibration when the application device is used. it can.
[0020]
In the pn junction semiconductor chip structure used in the present embodiment, the p-type semiconductor layer is generally thinner than the n-type semiconductor layer, and the junction between both layers from which the laser light is emitted is the LD chip 5. It is located closer to the p-side electrode 5B in the thickness direction. Therefore, when the LD chip 5 is attached so that the p-side electrode 5B faces the submount member 14 (that is, in a junction-down manner) (see FIG. 4b), the laser beam ( The emission point 6 (shown in phantom) is located closer to the submount member 14. At this time, the p-side electrode 5B abuts on the base 2 side and connects the n-side electrode 5A to the electrode terminal 7 side. Here, there is no problem even if the LD chip 5 is attached to the groove 16 so that the p-side electrode 5B appears outside (that is, in a junction-up manner).
[0021]
Furthermore, as shown in FIG. 5 a, a recess 26 into which the semiconductor chip 5 can be fitted may be provided on the side surface 24 a of the submount member 24 attached to the base 2. FIG. 5 b shows a state in which the LD chip 5 is fitted into the recess 26. In this state, the LD chip 5 is pressed toward the submount member 24 by the arm portion 7a (not shown in FIG. 5b) of the electrode terminal 7 and is sandwiched between the arm portion 7a and the submount member 24. . Providing such a recess 26 facilitates positioning of the LD chip 5 when the LD chip 5 is attached, and can prevent the LD chip 5 from being displaced due to fine vibration during use of the application device.
In this case, the LD chip 5 is attached so that the p-side electrode 5B appears on the outside (in a junction-up manner) in order to prevent the laser beam from being obstructed by the upper wall portion of the recess 26. The laser beam emission point 6 on the upper surface of the LD chip 5 is secured.
[0022]
Embodiment 2. FIG.
Next, a semiconductor laser device according to the second embodiment of the present invention will be described.
6 and 7 are an enlarged perspective view and an enlarged plan view showing the mounting structure of the LD chip 35 in the semiconductor laser device according to the second embodiment, respectively. In this embodiment, an LD chip 35 having electrodes 35A and 35B formed on the front side and the back side is sandwiched between an electrode terminal 37 and a base 32 provided on a base member (not shown) of the semiconductor laser device. Then, one electrode (n-side electrode) 35 A abuts on the base 32, and the other electrode (p-side electrode) 35 B is connected to the electrode terminal 37.
[0023]
The electrode terminal 37 is provided with an arm portion 37a having a predetermined length extending near the wall surface 32a of the base 32 on one end side, and is fixed to the base member on the other end side so as to be a so-called cantilever type. As shown in FIG. 7, the arm portion 37 a is formed so as to bend in the direction of the base 32. The arm portion 37 a having such a shape can abut against the LD chip 35 on the outer surface thereof, and can bias the LD chip 35 against the base 32.
[0024]
In the assembly process of the semiconductor laser device, in order to attach the LD chip 35, the LD chip 35 is slid between the arm portion 37a and the base 32 from the distal end side (the position of the phantom line in FIG. 7) of the arm portion 37a. To move to a predetermined position (the position indicated by the solid line in FIG. 7). Since the arm portion 37a is curved in the direction of the base 32, the LD chip 5 is pressed against the wall surface 32a of the base 32 when the movement is completed, so that the base 32 and the arm portion 37a It will be sandwiched between them. In this state, the LD chip 35 abuts on the base 32 on one electrode (n-side electrode) 35A side and is pressed by the arm portion 37a on the other electrode (p-side electrode) 35B side. To electrically connect to the electrode terminal 37.
[0025]
As described above, in this semiconductor laser device, the electrode terminal 37 can directly hold the LD chip 35 by the arm portion 37a having a predetermined elastic force, whereby each electrode of the LD chip 5 can be held. 5A and 5B can be electrically connected to the base 32 and the electrode terminal 37, respectively. According to the mounting structure of the LD chip 35, it is not necessary to perform a process involving a temperature rise such as soldering on the LD chip 35, so that no thermal stress is applied to the LD chip 35, and the semiconductor laser device is assembled. At this time, the reliability of the semiconductor laser device can be sufficiently ensured.
Further, by using such an attachment structure, it is possible to eliminate the need for soldering or wire bonding between the base 32 and the LD chip 35 and between the LD chip 35 and the electrode terminal 37. The number of assembly steps for the semiconductor laser device is reduced. In particular, in this embodiment, since the submount member generally required for relieving the thermal stress is not used, the assembly process of the semiconductor laser device is further simplified. And since a solder material, a wire, or a submount member becomes unnecessary, manufacturing cost can be reduced.
[0026]
In the second embodiment, although not particularly illustrated, in addition to the basic structure including the AuGe / Ni / Au n-side electrode 35A and the Ti / Pt / Au p-side electrode 35B, the p-side electrode is used as the LD chip 35. A metal In having a small Young's modulus compared to the material constituting the base 32, the arm portion 37a and the LD chip 35 is applied in a thickness of several μs or several tens μm on the layer 35B. Was used. Thus, when the LD chip 35 is slid and moved between the arm portion 37a and the base 32, the frictional force acting between the arm portion 37a and the LD chip 35 is absorbed, and the LD chip The damage received by the chip 35 is suppressed.
[0027]
As shown in FIG. 8a, a groove portion 46 into which the LD chip 35 can be fitted may be provided on the wall surface 42a of the base 42 against which the LD chip 35 is pressed. FIG. 8 b shows a state in which the LD chip 35 is fitted into the groove 46. In this state, the LD chip 35 is pressed toward the base 42 by the arm portion 37a (not shown in FIG. 8b) of the electrode terminal 37, and is sandwiched between the arm portion 37a and the base 42. Providing such a groove 46 facilitates positioning of the LD chip 35 when the LD chip 35 is attached, and prevents the LD chip 35 from being displaced laterally due to fine vibration when using the application device. it can. Here, the LD chip 35 is mounted such that the p-side electrode 35B faces the base 42 (that is, a junction down type). In this case, the laser light is applied to the upper surface of the LD chip 35. The emission point 36 (indicated by a virtual line) is located closer to the base 42.
[0028]
Further, as shown in FIG. 9a, a recess 56 into which the LD chip 35 can be fitted may be provided on the wall surface 52a of the base 52 against which the LD chip 35 is pressed. FIG. 9 b shows a state in which the LD chip 35 is fitted into the recess 36. In this state, the LD chip 35 is pressed toward the base 52 by the arm portion 37a (not shown in FIG. 9b) of the electrode terminal 37, and is sandwiched between the arm portion 37a and the base 52. By providing the recess 56, the LD chip 35 can be easily positioned when the LD chip 35 is attached, and the semiconductor chip can be prevented from being displaced due to fine vibration when the application device is used. Here, in order to prevent the laser beam from being obstructed by the upper wall portion of the recess 56, the LD chip 35 is attached so that the p-side electrode 35B appears outside (in a junction-up manner). A laser beam emission point 36 is secured on the upper surface of the substrate.
[0029]
In addition, this invention is not limited to the above illustrated embodiment, It cannot be overemphasized that various improvement or a change in design is possible in the range which does not deviate from the summary.
[0030]
【The invention's effect】
According to the invention of claim 1 of the present application, the semiconductor chip does not require a process involving a temperature rise such as soldering, and no thermal stress is applied to the semiconductor chip. Reliability can be sufficiently secured. In addition, according to the present invention, it is possible to eliminate the need for soldering or wire bonding between the submount member and the semiconductor chip and between the semiconductor chip and the electrode terminal, and the number of assembly steps of the semiconductor device can be eliminated. Will be less. Along with this, the soldering material and the wires are not necessary, so that the manufacturing cost can be reduced.
[0031]
Further, according to the invention of claim 2 of the present application, when the semiconductor chip is attached, it is easy to position the semiconductor chip, and it is possible to prevent the semiconductor chip from being displaced in the lateral direction due to fine vibration when the application device is used. .
[0032]
Furthermore, according to the invention of claim 3 of the present application, when a semiconductor chip is attached, it is easy to position the semiconductor chip, and it is possible to prevent the semiconductor chip from being displaced due to fine vibration when the application device is used.
[0033]
Still further, according to the invention of claim 4 of the present application, when the semiconductor chip is attached, when the semiconductor chip is slid and moved between the arm portion of the electrode terminal and the submount member, the arm portion and the semiconductor Since the layered portion absorbs the frictional force acting between the chip and between the semiconductor chip and the submount member, damage to the semiconductor chip can be suppressed.
[0034]
According to the invention of claim 5 of the present application, the semiconductor chip does not require a process involving a temperature rise such as soldering, and no thermal stress is applied to the semiconductor chip. Reliability can be sufficiently secured. Further, according to the present invention, it is possible to eliminate the need to perform soldering or wire bonding between the base and the semiconductor chip and between the semiconductor chip and the electrode terminal. Less. In particular, the process of increasing the temperature is not used for attaching the semiconductor chip, and the submount member is unnecessary, and therefore the assembly process is further simplified. In this case, since the solder material, the wire, and the submount member are not necessary, the manufacturing cost can be reduced.
[0035]
According to the invention of claim 6 of the present application, when the semiconductor chip is attached, when the semiconductor chip is slid and moved between the arm part of the electrode terminal and the base, the arm part and the semiconductor chip Since the layered portion absorbs the frictional force acting between the semiconductor chip and the semiconductor chip and the base, damage to the semiconductor chip can be suppressed.
[0036]
Furthermore, according to the seventh aspect of the present invention, when the semiconductor chip is mounted, the positioning becomes easy, and the semiconductor chip can be prevented from being displaced laterally due to fine vibration when the application device is used. .
[0037]
Furthermore, according to the invention of claim 8 of the present application, when a semiconductor chip is attached, it is easy to position the semiconductor chip and it is possible to prevent the semiconductor chip from being displaced due to fine vibration when the application device is used.
[Brief description of the drawings]
FIG. 1 is a cutaway perspective view showing an internal structure of a semiconductor laser device according to a first embodiment of the present invention.
FIG. 2 is an enlarged perspective view showing a semiconductor chip mounting structure in the semiconductor laser device.
FIG. 3 is an enlarged plan view showing a mounting structure of the semiconductor chip.
FIG. 4A is a perspective view of a modified example of a submount member in the semiconductor laser device.
(B) It is a perspective view which shows the attachment structure of the semiconductor chip with respect to the modification of the said submount member.
FIG. 5A is a perspective view of another modification of the submount member in the semiconductor laser device.
(B) It is a perspective view which shows the attachment structure of the semiconductor chip with respect to the other modification of the said submount member.
FIG. 6 is an enlarged perspective view showing a semiconductor chip mounting structure in the semiconductor laser device according to the second embodiment of the present invention.
FIG. 7 is an enlarged plan view showing a semiconductor chip mounting structure in the semiconductor laser device according to the second embodiment.
FIG. 8A is a perspective view of a modification of the base in the semiconductor laser device according to the second embodiment.
(B) It is a perspective view which shows the attachment structure of the semiconductor chip with respect to the modification of the said base.
9A is a perspective view of another modification of the base in the semiconductor laser device according to the second embodiment. FIG.
(B) It is a perspective view which shows the attachment structure of the semiconductor chip with respect to the other modification of the said base.
FIG. 10 is a diagram showing an internal structure of a conventional semiconductor laser device.
FIG. 11 is an enlarged view showing a semiconductor chip mounting structure in a conventional semiconductor laser device.
[Explanation of symbols]
2, 32, 42, 52 Base, 4, 14, 24 Submount member, 5, 35 Semiconductor chip, 5A, 5B, 35A, 35B Electrode, 7 electrode terminal, 10 Semiconductor device, 16 Groove portion of submount member, 26 Submount member recess, 46 base groove, 56 base recess

Claims (8)

In a semiconductor device in which a semiconductor chip having electrodes formed on the front side and the back side is arranged on one side of a base member,
A base erected on the base member;
A conductive submount member attached to the base wall;
An electrode terminal provided with an arm portion that is close to or in contact with the outer surface of the submount member and curves in the direction of the base and the submount member;
The semiconductor chip is sandwiched between the electrode terminal and the outer surface of the submount member by the elastic force of the arm portion , one electrode abuts on the base side, and the other electrode is on the electrode terminal side A semiconductor device which is electrically connected to the semiconductor device. 2. The semiconductor device according to claim 1, wherein a layered portion having a Young's modulus smaller than Young's modulus of the submount member, the electrode terminal, and the semiconductor chip is provided on at least one electrode side of the semiconductor chip. . 3. The semiconductor device according to claim 1, wherein a groove having a predetermined width into which the semiconductor chip can be fitted is provided on an outer surface of the submount member. The semiconductor device according to claim 1, wherein a concave portion into which the semiconductor chip can be fitted is provided on an outer surface of the submount member. In a semiconductor device in which a semiconductor chip having electrodes formed on the front side and the back side is arranged on one side of a base member,
A base erected on the base member;
An electrode terminal provided with an arm portion that approaches or contacts the wall surface of the base and curves in the direction of the base;
The semiconductor chip is sandwiched between the electrode terminal and the wall surface of the base by the elastic force of the arm part , one electrode abuts on the base side, and the other electrode is electrically connected to the electrode terminal side. Semiconductor device, characterized in that the semiconductor device is connected. 6. The semiconductor device according to claim 5, wherein a layered portion having a Young's modulus smaller than the Young's modulus of the base, the electrode terminal, and the semiconductor chip is provided on at least one electrode side of the semiconductor chip. 7. The semiconductor device according to claim 5, wherein a groove having a predetermined width into which the semiconductor chip can be fitted is provided on a wall surface of the base. 8. The semiconductor device according to claim 5, wherein a recess in which the semiconductor chip can be fitted is provided on a wall surface of the base. 9.

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