JP3841130B2 - Optical semiconductor module and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical semiconductor module including an optical semiconductor chip such as an LED (light emitting diode) chip or an LD (laser diode) chip, and a method for manufacturing the optical semiconductor module.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, an optical semiconductor module used in a visible form as an indicator of an electronic device or the like is usually structured so that each LED chip is sealed with a light-transmitting resin package. It is supposed to be built in. In such an optical semiconductor module, in order to connect an LED chip and an electrode in a package, it is generally connected via an extremely fine conductor wire by wire bonding.
[0003]
[Problems to be solved by the invention]
However, the conventional optical semiconductor module has the following problems.
[0004]
That is, in recent years, the usage of optical semiconductor modules is still expanding, and depending on the usage, there is a strong demand for reducing the thickness of optical semiconductor modules. For example, when an optical semiconductor module is incorporated in an IC card that is formed into a thin card as a whole, it is desirable to reduce the thickness of the entire module incorporating the LED chip as much as possible. There is also a demand for gathering a large number of LED chips to enable geometric display by array pixels and to display a display function with a different taste from an indicator or the like.
[0005]
However, in an optical semiconductor module used in a conventional indicator or the like, the LED chip and the electrode are connected by wire bonding. Therefore, in addition to the thickness of the LED chip, the bonding height of the conductor wire must be taken into consideration. In other words, it has not been possible to realize a structure that is thin as thin as an IC card.
[0006]
On the other hand, when a plurality of LED chips are used to enable geometric display by array pixels, it is necessary to collect a large number of packaged individual LED chips. Thus, the entire module has a large structure, and in addition to the above-described problem of thinning, the entire module cannot be reduced in size.
[0007]
Further, such a problem occurs not only in the LED chip but also in other optical semiconductor chips such as an LD chip.
[0008]
The present invention has been conceived under such circumstances, and has a completely different structure from that of the prior art. As a result of assembling a large number of optical semiconductor chips into a module, the entire module It is an object of the present invention to provide an optical semiconductor module capable of realizing a reduction in thickness and size and a manufacturing method thereof.
[0009]
DISCLOSURE OF THE INVENTION
In order to solve the above problems, the present invention takes the following technical means.
[0010]
That is, the optical semiconductor module provided by the first aspect of the present invention, together with at least one film has a light-transmitting property, a plurality of electrodes on the surface of the hand of the film is formed, and the other films It is sandwiched between the first and second films having conductivity and the first and second films in a state of being connected to the plurality of electrodes, respectively, and is arranged with a predetermined plane pattern in both film surfaces. A plurality of optical semiconductor chips, wherein the optical semiconductor chip removes the substrate from a substrate in which a semiconductor laminated portion is grown with a compound semiconductor and a light reflecting layer is formed on the semiconductor laminated portion. The LED chip has a structure in which a conductive layer is formed on the removal surface.
[0011]
According to the optical semiconductor module provided by the first aspect in which the above technical measures are taken, in a state where a plurality of optical semiconductor chips are sandwiched between the first and second films, It is a structure arranged with a predetermined plane pattern. The plurality of optical semiconductor chip, one of the first and second films, and is capable energized via a plurality of electrodes formed on a surface of the hand of the film. Thereby, light is selectively emitted from the plurality of optical semiconductor chips in accordance with energization control via the plurality of electrodes, and geometric display according to the array pixels by the plurality of optical semiconductor chips becomes possible. Therefore, since the optical semiconductor module has a structure in which a plurality of optical semiconductor chips are arranged while being sandwiched between two films, the thickness of only the chip and two films is reduced, so that the entire module can be thinned. Can be realized. In addition, since the individual optical semiconductor chips are simply arranged in a plane pattern in the film plane, the first and second films can achieve the conventional package function and realize the miniaturization of the entire module. Can do.
[0014]
Further, in this optical semiconductor module, the optical semiconductor chip is formed by removing the substrate from the semiconductor laminated portion grown on the substrate with the compound semiconductor and forming the light reflecting layer on the semiconductor laminated portion. Since the LED chip has a structure in which a conductive layer is formed, unlike the optical semiconductor chip provided with the crystal growth substrate, the thickness of the crystal growth substrate formed from the wafer is eliminated. The thickness of the module itself can be considerably reduced, and the thickness of the entire module can be considerably reduced accordingly.
[0015]
In another preferred embodiment, an intermediate film having a plurality of perforated portions is sandwiched between the first and second films in alignment with the plurality of optical semiconductor chips.
[0016]
According to such an embodiment, since the intermediate film having a plurality of perforated portions aligned with the plurality of optical semiconductor chips is sandwiched between the first and second films, the perforated portion of the intermediate film In a state where the optical semiconductor chip is fitted, the intermediate film serves to reinforce the entire module with the first and second films as the front and back surfaces, and a thin but rigid module structure can be provided.
[0017]
Furthermore, in another preferred embodiment, the intermediate film has light diffusibility.
[0018]
According to such an embodiment, since the intermediate film has light diffusibility, the light emitted from the optical semiconductor chip is efficiently guided to the first film or the second film through the intermediate film, The brightness of the light emitted to the outside can be kept constant.
[0019]
In another preferred embodiment, the electrode has translucency and is formed on the surface of at least one of the first and second films.
[0020]
According to such an embodiment, since the translucent electrode is formed on the surface of at least one translucent film of the first and second films, it is emitted from the optical semiconductor chip. The transmitted light passes through the translucent film while passing through the electrode, so that the transparency of light emitted from the optical semiconductor chip to the outside can be improved.
[0021]
Note that a transparent conductive film such as an ITO (Indium Tin Oxide) film used in a liquid crystal display or the like can be used as the light-transmitting electrode. Alternatively, a metal such as gold, which is generally a good conductor, can be applied, and the light-transmitting property can be provided by sufficiently reducing the thickness thereof.
[0022]
In another preferred embodiment, the plurality of optical semiconductor chips are arranged in a matrix-like plane pattern.
[0023]
According to such an embodiment, the plurality of optical semiconductor chips are arranged in a matrix-like plane pattern. Therefore, by selectively emitting light from such an optical semiconductor chip, a display with a different taste from the indicator or the like is displayed. Functions such as geometric display of characters and figures can be performed.
[0024]
Furthermore, in other preferable embodiment, both the said 1st and 2nd film have translucency.
[0025]
According to such an embodiment, since both the first and second films have translucency, light is emitted to the outside from both the front and back surfaces of the entire module. Alternatively, the module can be easily handled regardless of the back side.
[0026]
The manufacturing method of the optical semiconductor module provided by the second aspect of the present invention, together with at least one film has a light-transmitting property, a plurality connectable to a plurality of optical semiconductor chip on the surface of the hand of the film The first and second films having conductivity are prepared , and the other film is prepared. The method of manufacturing an optical semiconductor module, wherein a semiconductor stacked portion is grown from a compound semiconductor on a substrate, And a step of forming an optical semiconductor prototype having a certain area in which a light reflecting layer is formed on the semiconductor laminate, a step of attaching a stretchable strip-shaped member on the light reflecting layer of the optical semiconductor prototype , and the light a step of dividing the plurality of optical semiconductor chips from a semiconductor plasma removal of the substrate, and by cutting a material obtained by forming a conductive layer on the removal surface, extending the belt-shaped member in a predetermined direction By doing so, the first optical semiconductor chip is arranged over the whole of the plurality of optical semiconductor chips with respect to the step of arranging the plurality of optical semiconductor chips in a predetermined plane pattern and the surface opposite to the surface to which the band-shaped member is attached. The second film over the plurality of optical semiconductor chips, with respect to the surface on which the band-shaped member is adhered after the step of bonding the film and the surface of the plurality of optical semiconductor chips after the strip-like member is peeled off. And a step of bonding.
[0027]
According to the method of manufacturing an optical semiconductor module provided by the second aspect in which the above technical means is taken, the optical semiconductor chips divided into a plurality of pieces using a stretchable strip-shaped member are collectively put together. Since it can arrange, the optical semiconductor module provided by the 1st side surface of this invention can be manufactured appropriately and efficiently.
[0029]
Also , an optical semiconductor module similar to that described above, that is, an optical semiconductor module including an optical semiconductor chip whose main body is a semiconductor stacked portion other than a substrate used for crystal growth of a compound semiconductor can be manufactured.
[0030]
In another preferred embodiment, after the step of arranging the plurality of optical semiconductor chips in a predetermined plane pattern, an intermediate film having a plurality of perforated portions aligned with the plurality of optical semiconductor chips is formed on the band-shaped member. It has the process of sticking.
[0031]
According to such an embodiment, the same optical semiconductor module as described above, that is, a state in which an intermediate film having a plurality of perforated portions aligned with a plurality of optical semiconductor chips is sandwiched between the first and second films An optical semiconductor module can be manufactured.
[0032]
Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.
[0033]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a preferred embodiment of the present invention will be specifically described with reference to the drawings.
[0034]
1 is a schematic perspective view showing an embodiment of an optical semiconductor module according to the present invention, FIG. 2 is an enlarged exploded perspective view showing the optical semiconductor module shown in FIG. 1 in an enlarged manner, and FIG. 2 is a partially enlarged cross-sectional view showing a partially enlarged XX cross section of the optical semiconductor module shown in FIG.
[0035]
As shown in FIG. 1, the optical semiconductor module A is, for example, of a size that can be incorporated into a thin IC card B, and has a sheet shape that is thinner than the thickness of the IC card B. Such an optical semiconductor module A includes a plurality of LED (light emitting diode) chips 1, first and second films 2 and 3 that cover the LED chip 1 in a sandwiched state, and the LED chip 1 together with the first and second films. An intermediate film 4 sandwiched between the films 2 and 3 is provided and is schematically configured.
[0036]
Each LED chip 1 has a structure in which a light reflecting layer 11, a semiconductor laminated portion 12, and a conductive layer 13 are sequentially laminated, and the light emitting action is exhibited by the semiconductor laminated portion 12. . The LED chip 1 has a structure in which a substrate, which will be described later, used for crystal growth of the compound semiconductor constituting the semiconductor multilayer portion 12 is removed from the semiconductor multilayer portion 12. The LED chip 1 is formed in a 0.3 mm square pellet, for example. Further, the total thickness of the light reflecting layer 11, the semiconductor laminated portion 12, and the conductive layer 13 is an extremely thin dimension of about 5 to 10 μm. A plurality of such LED chips 1 are arranged at predetermined intervals in a plane between a first film 2 and a second film 2, which will be described later, in a matrix-like plane pattern extending over a plurality of rows and a plurality of columns. ing.
[0037]
The light reflecting layer 11 is a thin film layer of Ag, Cr, Ti, or other glossy metal, and is a portion formed by depositing a predetermined metal by vapor deposition or sputtering, as will be described later. .
[0038]
The semiconductor laminated portion 12 has the same configuration as a conventionally known light emitting diode. The semiconductor stacked portion 12 uses a simple crystal of a IIIb-Vb group compound semiconductor containing gallium, and includes, for example, a GaP layer 12a, a p-type InGaAlP layer 12b, a light emitting layer 12c, and an n-type as a light diffusion layer. The InGaAlP layer 12d is laminated. The light emitting layer 12c is an InGaAlP layer.
[0039]
The conductive layer 13 is a thin film layer of, for example, gold (Au), and is a portion where gold is deposited on the entire surface of the n-type InGaAlP layer 12d by vapor deposition or sputtering. The gold conductive layer 13 has a thickness of, for example, about 100 mm, and has a light-transmitting property because it is sufficiently thin.
[0040]
Each of the first and second films 2 and 3 is, for example, a synthetic resin film having a thickness of about 10 μm to 100 μm and having translucency. In the illustrated example, the overall plan view shape is formed in a long rectangular shape. Has been.
[0041]
The first film 2 is attached to the surface of the light reflecting layer 11 which is one side of the LED chip 1 and is electrically conductive in various parts of the film by kneading conductive particles such as metal particles. It is a thing with.
[0042]
The said 2nd film 3 is affixed on the surface of the electrode layer 13 used as the other side of the light reflection layer 11 of the said LED chip 1, and it adheres to each of several LED chip 1 on the affixing surface. A plurality of electrodes 31 to be connected are formed. These electrodes 31 are formed in a thin film with a matrix-like plane pattern at a position aligned with each of the plurality of LED chips 1 and are formed to be sufficiently thin as compared with the thickness of the second film 3, so that translucency is achieved. Have. In addition, these electrodes 31 are connected to a wiring pattern 32 that is extended to one end of the second film 3 without being electrically connected to each other. It is formed. The electrodes 31 and the wiring patterns 32 can also be configured by a transparent electrode film such as a so-called ITO film.
[0043]
The intermediate film 4 is a synthetic resin film having the same thickness as that of the LED chip 1, and has an overall planar shape similar to that of the first and second films 2 and 3. Further, the intermediate film 4 is formed with a plurality of perforated portions 4a that are fitted into the plurality of LED chips 1 while being sandwiched between the first and second films 2 and 3, and the other substantial part Has insulating properties and light diffusing properties. Each of the perforated portions 4a is formed to have a slightly larger shape than the LED chip 1, and has a size that allows the LED chip 1 to be accommodated.
[0044]
Next, a method for manufacturing the optical semiconductor module A will be described with reference to FIGS.
[0045]
First, as shown in FIG. 4, a plurality of semiconductor layers 12 a to 12 d are crystal-grown on the surface of a GaAs substrate 5 used only in the manufacturing method, and the semiconductor stacked portion 12 is manufactured. This crystal growth may be performed, for example, by metal organic chemical vapor deposition (MOCVD), and a single crystal of a predetermined compound semiconductor constituting the light emitting diode can be efficiently grown by this growth method. The GaAs substrate 5 is formed as a wafer and has a thickness of 200 μm to 300 μm or more. The semiconductor laminate 12 is formed on the entire surface of the wafer.
[0046]
Next, as shown in FIG. 5, a predetermined glossy metal such as Ag or Cr is formed on the surface of the uppermost GaP layer 12a of the semiconductor stacked portion 12 by vapor deposition or sputtering, and the light reflecting layer 11 is formed. Make it. What is comparable to the overall size of the wafer thus produced is called an optical semiconductor prototype.
[0047]
Thereafter, as shown in FIG. 6, a stretchable belt-like member 6 is attached to the entire surface of the light reflecting layer 11 of the original optical semiconductor. The belt-like member 6 is made of, for example, an expanded tape having a larger plane area than the wafer, and an adhesive layer is formed on the sticking surface in advance.
[0048]
After the affixing operation of the belt-shaped member 6, the GaAs substrate 5 used for crystal growth is removed from one side of the semiconductor stacked portion 12 as shown in FIG. This operation can be performed by, for example, an etching process in which the GaAs substrate 5 is immersed in an etching process liquid in which ammonia and hydrogen peroxide are mixed. Further, instead of such an etching process, for example, the GaAs substrate 5 may be ground and removed by mechanical means. However, from the viewpoint of workability and protection of the semiconductor stacked portion 12, it is preferable to perform the etching process.
[0049]
After removing the GaAs substrate 5, as shown in FIG. 8, a gold conductive layer 13 is formed on the surface of the n-type InGaAlP layer 12d located in the outermost layer of the semiconductor laminated portion 12. This operation can be performed by depositing gold or sputtering. The optical semiconductor prototype is manufactured by the conventional operation process, and then the pellet-shaped LED chip 1 is manufactured by the operation process described below.
[0050]
After the optical semiconductor prototype that is comparable to the size of the entire wafer is completed, the optical semiconductor prototype is divided in a state of being attached to the belt-like member 6 as shown in FIG. At this time, the optical semiconductor prototype is divided into a grid shape (not shown), and each of the divided LED chips 1 is formed into a pellet. This operation is performed using, for example, a diamond cutter or a laser cutter, as in a general wafer dicing process.
[0051]
Next, as shown in FIG. 10, the strip-shaped member 6 is stretched in the arrow direction W, so that the LED chips 1 attached to the strip-shaped member 6 are arranged at predetermined intervals t. At this time, the strip-shaped member 6 is also extended in a direction orthogonal to the arrow direction W (not shown), and as a result, the LED chips 1 are arranged in a matrix-like plane pattern.
[0052]
After that, as shown in FIG. 11, the intermediate film 4 is stuck to the sticking surface of the belt-like member 6 while fitting the perforated part 4 a to the LED chip 1 while the belt-like member 6 is stretched. At this time, the intermediate film 4 has a continuous tape-like intermediate form.
[0053]
After the operation of attaching the intermediate film 4, as shown in FIG. 12, the LED chip 1 that is the surface opposite to the surface to which the belt-like member 6 is stuck with the belt-like member 6 stretched. The second film 3 is bonded to the entire surface of the intermediate film 4. At this time, the work is performed while aligning the conductive layer 13 of the LED chip 1 and the electrode 31 of the second film 3 so as to be aligned and connected. Further, the second film 3 is a continuous tape-like intermediate form similar to the intermediate film 4.
[0054]
After the joining operation of the second film 3, the band-like member 6 in the stuck state is peeled off from the LED chip 1 and the intermediate film 4, and then the LED in which the belt-like member 6 is stuck as shown in FIG. 13. The first film 2 is bonded to the entire surface of the chip 1 and the intermediate film 4. Also in this case, the first film 2 has a continuous tape-like intermediate form like the intermediate film 4 and the second film 3.
[0055]
According to the above series of work steps, a semi-finished product having a structure in which a plurality of LED chips 1 are arranged in a matrix-like plane pattern between the first and second films 2 and 3 is produced. The optical semiconductor module A in the final form is completed by cutting into a long rectangular shape with a predetermined dimension.
[0056]
In the optical semiconductor module A manufactured in this way, a plurality of LED chips 1 are sandwiched between the first and second films 2 and 3 and a matrix-like plane is formed within the surfaces of both the films 2 and 3. It is a structure arranged with a pattern. Each of the plurality of LED chips 1 is in a state of being grounded to the first film 2 via conductive particles kneaded throughout the film, while the second film 3 is Each is connected to an external power source (not shown) through the corresponding electrode 31. Thereby, light is selectively emitted from the plurality of LED chips 1 in accordance with energization control via the plurality of electrodes 31, and the geometric display light emission corresponding to the array pixels by the plurality of LED chips 1 is the second. It will be visually recognized through the film 3.
[0057]
Therefore, since the optical semiconductor module A has a structure in which a plurality of LED chips 1 are arranged in a matrix while being sandwiched between two films 2 and 3, only the chip 1 and the two films 2 and 3 are provided. The thickness of the entire module can be reduced by having the thickness, and the individual LED chips 1 are arranged in a matrix-like plane pattern in the surfaces of the films 2 and 3. The second film 2 and 3 can realize the downsizing of the entire module while performing the conventional package function.
[0058]
Further, since the LED chip 1 has the semiconductor laminated portion 12 other than the substrate 5 used for the crystal growth of the compound semiconductor in the manufacturing process as a main body, it is different from the LED chip having the conventional structure including the substrate 5 for crystal growth. Since the thickness of the crystal growth substrate 5 formed from the wafer is eliminated, the thickness of the chip itself can be considerably reduced, and the thickness of the entire module can be considerably reduced accordingly.
[0059]
Further, since the intermediate film 4 having a plurality of perforated portions 4a aligned with the plurality of LED chips 1 is sandwiched between the first and second films 2 and 3, the perforated portions 4a of the intermediate film 4 are sandwiched between them. In a state in which the LED chip 1 is fitted, the intermediate film 4 serves to reinforce the entire module with the first and second films 2 and 3 as the front and back surfaces, and provides a thin but rigid module structure. Can do.
[0060]
Furthermore, since the plurality of LED chips 1 are arranged in a matrix-like plane pattern, the LED chip 1 is selectively made to emit light, whereby a display function having a different taste from the indicator or the like, for example, characters and figures Geometric display such as can be performed.
[0061]
On the other hand, according to the manufacturing method of the optical semiconductor module A as described above, since the LED chips 1 divided into a plurality of pieces can be arranged at once using the stretchable strip-like member 6, it is thin. The optical semiconductor module A that has been reduced in size and size can be manufactured appropriately and efficiently.
[0062]
In the present embodiment, both the first and second films 2 and 3 are translucent. However, as another embodiment, only the second film 3 on the surface side of the IC card B is transmissive. The first film 2 that has optical properties and is accommodated inside the IC card B may have light reflectivity without having translucency.
[0063]
In addition, the first film 2 may be one in which an electrode having translucency is formed on one surface in the same manner as the second film 3. In this case, since the thickness of the electrode is added to the thickness of the entire module, it can be said that the structure of the above embodiment is most desirable when a thin module is produced as much as possible.
[Brief description of the drawings]
FIG. 1 is a schematic perspective view showing an embodiment of an optical semiconductor module according to the present invention.
FIG. 2 is an enlarged exploded perspective view showing the optical semiconductor module shown in FIG. 1 in an exploded manner.
3 is a partially enlarged cross-sectional view showing a partially enlarged XX cross section of the optical semiconductor module shown in FIG. 1;
4 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
5 is a cross-sectional view of the principal part showing one step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
6 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
7 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
8 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
9 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
10 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
11 is a fragmentary cross-sectional view showing one step of a method of manufacturing the optical semiconductor module shown in FIG. 1; FIG.
12 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1. FIG.
13 is a fragmentary cross-sectional view showing a step of the method of manufacturing the optical semiconductor module shown in FIG. 1; FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 LED chip 2 1st film 3 2nd film 31 Electrode 4 Intermediate film 4a Perforation part 5 Substrate 12 Semiconductor laminated part A Optical semiconductor module

Claims (8)

Which has at least one film is a light-transmitting property, a plurality of electrodes is formed on the surface of the hand of a film, and the first and second films other film is electrically conductive,
A plurality of optical semiconductor chips sandwiched between the first and second films in a state of being connected to the plurality of electrodes, respectively, and arranged in a predetermined plane pattern in both film surfaces;
With
The optical semiconductor chip has a structure in which a semiconductor laminated portion is grown from a compound semiconductor on a substrate, a light reflecting layer is formed on the semiconductor laminated portion, the substrate is removed, and a conductive layer is formed on a removal surface. An optical semiconductor module, which is an LED chip.   2. The optical semiconductor module according to claim 1, wherein an intermediate film having a plurality of perforated portions is sandwiched between the first and second films in alignment with the plurality of optical semiconductor chips.   The optical semiconductor module according to claim 2, wherein the intermediate film has light diffusibility.   The electrode according to any one of claims 1 to 3, wherein the electrode has translucency and is formed on a surface of at least one of the first and second films having translucency. The optical semiconductor module described.   5. The optical semiconductor module according to claim 1, wherein the plurality of optical semiconductor chips are arranged in a matrix-like plane pattern.   The optical semiconductor module according to claim 1, wherein both the first and second films have translucency. At least one of the film with a light-hand of the film surface a plurality of optical semiconductor chip which can be connected a plurality of electrodes are formed on the, and the other of the film first and second having conductivity A method of manufacturing an optical semiconductor module in which a film is prepared,
A step of growing a semiconductor laminated portion with a compound semiconductor on a substrate and forming an optical semiconductor prototype having a certain area in which a light reflecting layer is formed on the semiconductor laminated portion;
A step of attaching a belt-shaped member capable of stretching in the optical semiconductor original form of the light-reflecting layer,
Removing the substrate from the optical semiconductor prototype, and cutting the conductive layer on the removal surface and dividing it into the plurality of optical semiconductor chips;
Arranging the plurality of optical semiconductor chips in a predetermined plane pattern by extending the strip-shaped member in a predetermined direction; and
The step of bonding the first film across the plurality of optical semiconductor chips to the surface opposite to the surface to which the band-shaped member is attached,
After peeling the band-shaped member from the plurality of optical semiconductor chips, the step of bonding the second film over the plurality of optical semiconductor chips to the surface on which the band-shaped member is adhered;
A method of manufacturing an optical semiconductor module, comprising: After the step of arranging the plurality of optical semiconductor chips in a predetermined plane pattern, the method includes a step of attaching an intermediate film having a plurality of perforated portions aligned with the plurality of optical semiconductor chips to the band-shaped member. The manufacturing method of the optical-semiconductor module of Claim 7 .

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