JP3814813B2 - Plasma generator - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma generation apparatus suitable for efficiently performing plasma processing such as etching, film formation, and ashing in high-precision manufacturing processes such as ICs and LCDs, and more specifically, generates plasma using an electric field and a magnetic field. The present invention relates to a plasma generator.
[0002]
[Prior art]
Conventionally, as a plasma generator used for plasma processing such as CVD, etching, ashing, etc., plasma generation is insufficient when only plasma is applied to an electric field. Therefore, a high-density plasma (HDP) is generated by sealing the plasma by applying a magnetic field. MRIE (magnetron reactive ion etcher) and the like are known. There is also known an apparatus which attempts to prevent damage by uniformizing a magnetic field using a planar coil as described in JP-A-3-79025.
[0003]
Furthermore, the plasma space is separated into a plasma processing space and a plasma generation space that communicate with each other in order to reduce damage to the object due to ions and prevent the object from being directly exposed to the high-density plasma being generated. Plasma with high-density plasma in a strong magnetic field such as ECR (Electron Cyclotron Resonance) or those in which both spaces are separated from each other, such as those described in JP-A-4-81324, ICP (Inductive Coupled Plasma), etc. It is the same in that the plasma generation space is confined to the plasma generation space adjacent to the processing space and the plasma generation space is adjacent to the plasma processing space. There are also known devices that confine high-density plasma using polarized electromagnetic waves.
[0004]
On the other hand, since it is difficult to uniformly supply plasma in a single plasma generation space as the processing target such as a liquid crystal substrate is enlarged and the plasma processing space is expanded, as described in JP-A-8-222399, In some cases, a plurality of plasma generation spaces are provided, and a control valve is provided for each of them to supply reaction gas and processing gas. In this case, the plasma generation space is divided into vertical cylindrical spaces so that the opening area does not decrease even if the number of plasma generation spaces is increased. Each side surface is surrounded by a high-frequency coil for excitation, and the magnetism for sealing the plasma is cylindrical. It is sent from the upper and lower end surfaces.
[0005]
[Problems to be solved by the invention]
However, in these conventional plasma generators, the plasma space is separated into a plasma generation space and a plasma processing space to reduce plasma damage and charge-up. However, the plasma processing object such as a substrate is increased in size. However, it cannot always be said that there is sufficient applicability. Since the plasma supplied from the plasma generation space to the plasma processing space spreads laterally on the surface when it hits the object to be processed, it flows out while spreading from the inside of the center / center to the outside of the edge / periphery, etc. Since the outside concentration tends to be thin, it is difficult to ensure the uniformity of plasma over the entire plasma processing space, and the tendency increases as the size increases. Such inconvenience is not solved even if the plasma generation space is made plural and the plasma supply to the plasma processing space becomes uniform. Therefore, a structure that does not impair the uniformity of the plasma supplied from the plasma generation space to the plasma processing space is devised, and even if the plasma processing space becomes large, uniform plasma is supplied to the object to be processed there. This is an important issue.
[0006]
In the conventional plasma generation apparatus, if the distance between the plasma generation space and the plasma processing space is too large, ion species are suppressed more than necessary. More gas flows back into the generation space. Such a backflow gas also contains components that should be discharged immediately, such as those generated by processing the object to be processed. When this gas enters the plasma generation space, it is violently decomposed and ionized by the high-density plasma, causing contamination, etc. It is inconvenient because it often changes to an undesirable one. This is not solved even if the plasma generation space is made plural, if the opening area from the plasma generation space to the plasma processing space remains the same. Further, it is sufficient for high-density plasma to interpose a magnet or the like between the plasma generation space and the plasma processing space in order to apply a static magnetic bias for sealing the plasma from above and below the plasma generation space. If it is going to secure magnetic force, processing and mounting of a magnetic member will become troublesome. Therefore, the structure of the plasma generation space can be further devised so that unwanted gas inflow from the plasma processing space to the plasma generation space can be effectively prevented and the magnetic member can be mounted easily. It becomes a problem.
[0007]
The present invention has been made to solve such problems, and an object of the present invention is to realize a plasma generator that supplies uniform plasma. Another object of the present invention is to realize a plasma generating apparatus that supplies uniform and high-quality plasma and that can be easily manufactured.
[0008]
[Means for Solving the Problems]
About the 1st thru | or 4th solution means invented in order to solve such a subject, the structure and effect are demonstrated below.
[0009]
[First Solution] The plasma generator of the first solution is , A first mechanism formed with a plasma processing space; and a second mechanism attached to or integrated with the first mechanism to form a plasma generation space, the plasma generation space being the plasma processing space. In a plasma generator adjacent to and communicating with a space, By fixing the opening of the plasma generation space so as to overlap the communication port of the anode portion disposed above the first mechanism, Communication paths from the plasma generation space to the plasma processing space are formed in a dispersed manner. By tilting the periphery / periphery of the anode part, Located outside of the communication path The communication port Is characterized in that it is inclined inward.
[0010]
In such a plasma generator of the first solution, by maintaining the conditions of separation of the plasma space and adjacent communication, plasma damage and charge-up are reduced, and the radical species component and ion species in the plasma are reduced. We are responding to the basic request of optimizing the ratio with other ingredients. In addition, since the communication path from the plasma generation space to the plasma processing space is formed in a dispersed manner, the plasma supplied from the plasma generation space to the plasma processing space even if the workpiece or the plasma processing space is enlarged. Is easy to make uniform.
[0011]
In addition, since those outside the communication passages are inclined inwardly, the plasma is blown inward from the plasma generation space to the plasma processing space at the edge and peripheral portions. Therefore, the inward speed component suppresses the speed component from the inside such as the center / center to the outside such as the edge / periphery. As a result, the plasma is replenished while relaxing the rapid outflow of the plasma at the edge / periphery, so that the plasma uniformity is prevented from being damaged. Until it becomes uniform. Therefore, according to the present invention, a plasma generator that supplies uniform plasma can be realized.
[0012]
[Second Solution] The plasma generator of the second solution is as follows. , In the plasma generating apparatus of the first solving means described above, the inwardly inclined communication path is inclined so as to be deviated in the same rotation direction as viewed from the center.
[0013]
In such a plasma generator of the second solution, when the plasma is blown inward from the plasma generation space to the plasma processing space at the edge and periphery, the center and the center are the same. Rather than hitting it toward the place, it is done so that it rotates in the same direction as it rotates around the periphery of the center point and the center part. Then, in the peripheral and peripheral portions, the inward blowing of the plasma before the processing and the outward outflow of the plasma after the processing are performed while always following the rotation direction in the same direction.
[0014]
If the plasma is simply blown out toward the center or the center, a state similar to turbulent flow is also caused, and even if the average over the long term is uniform, the state of the flow varies randomly in the short period and is subtle. Where uncertainty and non-uniformity remain, applying a constant rotational force as described above stabilizes the state of the plasma flow microscopically, so spatially and temporally. Since the uniformity is improved, uniform processing can be performed without spots even in short-time processing or high-precision processing. Therefore, according to the present invention, it is possible to realize a plasma generator that supplies a more uniform plasma.
[0015]
[Third Solution] The plasma generator of the third solution is as follows. , The plasma generating apparatus of the second and third solving means described above, comprising a magnetic member provided on the second mechanism side and attached to the plasma generating space, wherein the plasma generating space and the magnetic member are the plasma. A plurality of them are provided along a surface adjacent to the processing space, and a part or all of them are alternately running in parallel.
[0016]
Here, the above-mentioned “magnetic member” corresponds to a permanent magnet and a DC excitation coil.
[0017]
In the plasma generating apparatus of the third solving means, in addition to the above-described conditions of the separation of the plasma space and the adjacent communication, the second mechanism in which the magnetic member attached to the plasma generating space is the same as the plasma generating space. Since both sides are provided along the adjacent surface to the plasma processing space, the magnetic force can be strengthened, and the adjacent surface communicating with the plasma processing space and the cross-sectional area of the plasma generation space along the surface can also be provided. At least the portion occupied by the magnetic member is necessarily smaller than that of the plasma processing space. If there is a difference between the areas of the two spaces in this way, the ratio of the area of the communication adjacent surface and the cross-sectional area of the plasma processing space along this is the first ratio, and the area of the communication adjacent surface and the plasma generation space along this area. The first ratio is less than 1 and smaller than the second ratio, where the ratio of the cross-sectional area is the second ratio.
[0018]
When the first ratio is less than 1, the amount of gas flowing from the plasma processing space into the plasma generation space decreases. On the other hand, when the second ratio is 1, the amount of gas flowing out from the plasma generation space to the plasma processing space does not decrease. Further, even when the second ratio is less than 1 and the amount of outflow gas decreases, if the second ratio is greater than the first ratio, the degree of decrease may be small. In any case, the ratio of the gas flowing out from the plasma generation space into the plasma processing space is relatively higher than the ratio of the gas flowing into the plasma generation space from the plasma processing space. This not only suppresses the flow of undesired gas into the plasma generation space, but even when the gas enters the plasma generation space, the gas is quickly discharged into the plasma processing space together with the plasma flow. , Gas alteration due to high-density plasma can be prevented and suppressed. Thereby, the plasma is maintained in a good quality state.
[0019]
In addition, due to the parallel running of the plurality of plasma generation spaces and the magnetic member, the distribution area of the plasma generation space is expanded from the line to the surface. In addition, since the area can be increased by increasing the number of parallel runs, it can be easily adapted even if the processing target such as a substrate is enlarged, and thus has excellent expandability. Furthermore, since the magnetic member is provided on the same side as the plasma generation space on the second mechanism side, there is no need to interpose the plasma generation space and the plasma processing space, so that the layout design, mounting work, and subsequent components are eliminated. Maintenance work such as replacement is also easier. Moreover, since the magnetic members are shared by the plasma generation spaces adjacent to each other by alternately arranging the plasma generation spaces and the magnetic members, the magnetic members can be used effectively and the plasma generation spaces can be arranged closely. Therefore, the degree of freedom in designing the arrangement of the plasma generation space is also improved. This makes it much easier to mount and manufacture.
[0020]
Therefore, according to the present invention, it is possible to realize a plasma generating apparatus that supplies uniform and high-quality plasma and that can be easily manufactured.
[0021]
[Fourth Solution] The plasma generator of the fourth solution is as follows. , In the plasma generating apparatus according to the first to third solving means, only the non-reactive gas is supplied to the plasma generating space.
[0022]
In such a plasma generator of the fourth solution, only non-reactive gas that is useful for generating high-density plasma and that does not undesirably deteriorate even if it becomes high-density plasma is used as the plasma gas. The reaction gas necessary for the etching process is supplied to the plasma processing space without passing through the plasma generation space. Thereby, it is possible to reliably prevent the reaction gas from entering the plasma generation space in combination with the above-described prevention of gas inflow from the plasma processing space to the plasma generation space. Therefore, even if the plasma density is further increased as necessary, even if a large amount of plasma is generated, the quality of the reaction gas is suppressed, so that the quality of the reaction gas is better than when the reaction gas is supplied via the plasma generation space. A plasma can be provided.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
The plasma generator of the present invention achieved by such a solution is generally used by being mounted in an appropriate vacuum chamber. For this purpose, each mechanism such as the first mechanism in which the plasma processing space is formed and the second mechanism in which the plasma generation space is formed has a balance between the ease of incorporation into the vacuum chamber and the necessity of the degree of vacuum. In many cases, it is attached separately after being formed from the standpoint of, for example, but it is often fixed in close contact, for example, but part or all of the same or a single member such as a clad material is used. It may be integrally formed by processing or the like.
[0024]
【Example】
A specific configuration of the plasma generator according to the first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a longitudinal sectional view thereof, FIG. 2 is a longitudinal sectional perspective view around the plasma generation chamber, and FIG. 3 is an enlarged view of one plasma generation space therein.
[0025]
This plasma generator generally includes a first mechanism for securing a plasma processing space, a second mechanism for securing a plasma generation space, and an additional portion thereof, and an application for applying an electric field or a magnetic field to each plasma. And a circuit part. In order to process a round workpiece 1 such as an IC silicon wafer, the first mechanism and the second mechanism both have a substantially disk / cylindrical shape (see FIG. 2).
[0026]
In the first mechanism, a metal anode portion 11 is disposed above, and a metal cathode portion 12 that is insulated on the top surface is disposed below to mount an object 1 such as a liquid crystal substrate. A plasma processing space 13 for the low temperature plasma 10 is formed between the two. In addition, the anode portion 11 is preliminarily formed with a plurality of communication ports 14 penetrating therethrough and a processing gas supply port 15 opened toward the plasma processing space 13 (FIG. 1, FIG. 1). (See FIG. 3). In this example, the ratio of the cross-sectional area of the communication port 14 to the effective cross-sectional area of the plasma processing space 13, that is, the first ratio is 0.05. The processing gas B supplied to the plasma processing space 13 through the processing gas supply port 15 is supplied by mixing a suitable amount of diluent gas with a reactive gas such as CF gas or silane gas. It is also.
[0027]
The second mechanism is mainly composed of a plasma generation chamber 21 made of an insulating material such as ceramic, and a plurality of (seven in the figure) annular grooves serving as plasma generation spaces 22 are concentric in the plasma generation chamber 21. It is engraved and formed. As a result, the plasma generation space 22 is dispersed. The plasma generation chamber 21 is fixed in a state where the opening side (lower surface in the drawing) of the plasma generation space 22 is in close contact with the upper surface of the anode portion 11. At that time, alignment is performed so that the opening of the plasma generation space 22 overlaps the communication port 14 of the anode portion 11. As a result, the plasma generation space 22 and the plasma processing space 13 are adjacent to and in communication with each other, and the communication paths 14 from the plasma generation space 22 to the plasma processing space 13 are formed in a dispersed manner. In this example, the ratio between the cross-sectional area of the communication port 14 and the cross-sectional area of the plasma generation space 22, that is, the second ratio is 0.5. Note that these ratio values can be freely changed as long as the magnitude relationship is not reversed.
[0028]
The plasma generation chamber 21 has a plasma gas supply path 23 formed in an annular shape by a gas distribution member 21a attached deeper in the plasma generation space 22 (upward in the longitudinal sectional view). The plasma generation space 22 is supplied with a plasma generating gas A from the bottom (upper side in the longitudinal sectional view) to generate a high-density plasma 20 and is connected to the plasma processing space 13 through the communication port 14. It is intended to send in. As the plasma generating gas A, an inert gas that does not chemically react, such as argon, is used.
[0029]
Further, the back surface (upper surface in the longitudinal sectional view) of the plasma generation chamber 22 is cut away so that the side wall and the bottom portion surrounding the plasma generation space 22 are left in the plasma generation chamber 21. Then, one permanent magnet 25 (lower part in the longitudinal sectional view), the coil 24 and the other permanent magnet 25 (upper part in the longitudinal sectional view) are stacked in this order. Each permanent magnet 25 is composed of a ring-shaped unit or a large number of small pieces arranged in a ring. Thus, the magnetic member 25 is provided on the second mechanism side and attached to the plasma generation space 22, and is disposed along the adjacent surfaces of the plasma generation space 22 and the plasma processing space 13 together with the plasma generation space 22. It has become. In addition, a plurality (six pairs in the figure) of permanent magnets 25 and a plurality (seven in the figure) of plasma generation spaces 22 provided on the inner side except for the outermost periphery are alternately arranged concentrically and run in parallel. It has become.
[0030]
The outermost plasma generation space 22 removed here is inclined by a predetermined angle of less than 90 ° so that the gas distribution member 21a moves to the outer peripheral side (left and right ends in the figure). This is performed by inclining the peripheral edge and the peripheral part of the plasma generation chamber 21 and the anode part 11 from the adjacent part to the plasma generation space 22 on the inside of the circuit. It is tilted by the same angle (see FIG. 1). As a result, in the plasma generating apparatus, the communication path 14 located outside is inclined inward. In addition, since the distance between the outermost plasma generation space 22 and the outermost plasma generation space 22 also increases, a pair of permanent magnets 25 and coils are provided on the inner and outer side walls with respect to the outermost plasma generation space 22. 24 is added so that the entire plasma generation space 22 is effectively sandwiched between the coil 24 and the permanent magnet 25.
[0031]
The permanent magnet 25 has a height obtained by adding a coil 24 to a pair of the permanent magnets 25 so that the height of the permanent magnet 25 is substantially equal to that of the plasma generation space 22, and the magnetic poles are directed in the direction of the horizontal plasma generation space 22 (see the vertical cross section in FIG. . More specifically, since the magnetic flux lines 26 extending laterally in the figure from the substantially lower half of the upper permanent magnet 25 in the figure pass near the coil 24 and return to the opposite side in the figure, the upper permanent magnet in the figure. A magnetic peak is created with the bottom of approximately 25 at the top. A substantially similar magnetic peak is formed at the upper end of the lower permanent magnet 25 in the figure. Since the permanent magnet 25 is attached to both sides of the plasma generation space 22, four magnetic peaks are formed around the plasma generation space 22. Therefore, a so-called magnetic basin surrounded by magnetic mountains is formed in the plasma generation space 22. Then, electrons are captured here. Although described as a potential field wind, since it is actually a vector field, it is complicated to describe accurately. In short, electrons are sealed in a donut shape in the annular plasma generation space 22 as a whole. It is also possible to form four magnetic peaks surrounding the cross section of the plasma generation space 22 by arranging permanent magnets with magnetic poles above and below the coil 24 (see FIG. 4). The former is suitable for increasing the plasma density, and the latter is suitable for equalizing the plasma density. Although illustration is omitted, it may be surrounded by five or more magnetic peaks.
[0032]
The application circuit unit is divided into a first application circuit centered on the RF power source 31 and a second application circuit centered on the RF power source 32. The RF power supply 31 has a variable output power, and applies an alternating electric field to the grounded anode part and generates a bias voltage, so that its output is sent to the cathode part 12 via a blocking capacitor. Be sent. For this, a frequency of 500 KHz to 2 MHz is often used. As a result, the first application circuit applies an electric field that contributes to the enhancement of the low temperature plasma 10 to the plasma processing space 13 to some extent.
[0033]
The RF power source 32 also has a variable output power, and drives both coils 24 sandwiching the plasma generation space 22 to apply an alternating magnetic field to the plasma generation space 22. The maximum output power is large, and the frequency is often set to 13 MHz to 100 MHz. Thus, the second application circuit applies a magnetic field that contributes to generation and strengthening of the high-density plasma 20 to the plasma generation space 22.
[0034]
The use mode and operation of the plasma generator of this embodiment will be described with reference to the drawings. 5R> 5 is a cross-sectional view showing a mounting state in the vacuum chamber, and FIG. 6 is a graph example showing a density distribution of the low-temperature plasma 10. FIG.
[0035]
Prior to use, the cathode 12 of the plasma generator is installed in the center of the box-shaped vacuum chamber body 2 that is open on the top. The vacuum chamber main body 2 has a vacuum chamber lid 3 attached to the top so that it can be opened and closed, and a vacuum pump 5 such as a turbo pump is connected to the bottom or side through a variable valve 4 for vacuum pressure control. ing. The vacuum chamber main body 2 is attached with the plasma generation chamber 21 and the anode 11 and can be cooled with water. When the vacuum chamber main body 2 is closed, the inside of the vacuum chamber main body 2 as well as the plasma processing space 13 and the plasma generation space 22 are also formed. Sealed. Then, when the vacuum pump 5 is operated and the supply of the plasma gas A through the plasma gas supply path 23 and the supply of the processing gas B through the processing gas supply port 15 are appropriately started, the cathode 12 Preparation for plasma processing is performed on the workpiece 1 mounted on the substrate.
[0036]
Next, when the RF power source 32 is operated, an RF electromagnetic field is applied to the plasma generation space 22 via the coil 24, and the electrons of the plasma gas A are vigorously moved. At this time, the electrons stay in the plasma generation space 22 for a long time by the action of the magnetic circuit by the permanent magnet piece 25, and fly around in the annular space while spirally exciting the plasma gas A. In this way, the high-density plasma 20 is generated, but since the electrons sealed in the plasma generation space 22 contain a large amount of high energy of 10 to 15 eV or more that greatly contributes to ionic species generation, the high-density plasma 20 Has a high ratio of ionic species components. The high-density plasma 20 expanded in the plasma generation space 22, in particular, the radical species and ionic species components are quickly transferred to the plasma processing space 13 by the expansion pressure.
[0037]
At this time, the high-density plasma 20 is uniformly blown out toward the plasma processing space 13 from the communication ports 14 that are dispersedly formed over almost the entire surface of the anode portion 11 and then flows out in the outer peripheral direction. High-density plasma 20 flows inward from the communication port 14 located at the outermost periphery with respect to the outer periphery and the edge. Thus, the plasma density at the edge portion, which has been apt to become thin in the past (see the broken line graph in FIG. 6), is supplemented and reinforced to the same concentration as the central portion (see the solid line graph in FIG. 6). The low temperature plasma 10 is made uniform over almost the entire surface of the space 13.
[0038]
When the RF power source 31 is operated, an RF electric field is also applied to the plasma processing space 13 via the anode part 11 and the cathode part 12. Since there is no magnetic circuit or the like for containing electrons, high-density plasma cannot be produced even when the processing gas B or the like is excited. When only the power from the RF power source 31 is used, the low temperature plasma 10 has a small number of electrons having energy of 10 to 15 eV or more, and therefore the ratio of the radical species component becomes high. However, in the case of the low-temperature plasma 10 in this apparatus, since the above-described high-density plasma 20 is mixed, the ratio of the actual radical species component to the ionic species component is any ratio between the two.
[0039]
When the output of the RF power source 32 is increased, electrons of 10 to 15 eV or more in the plasma generation space 22 increase. And the production amount of the high-density plasma 20 increases. As a result of the mixing, the ratio of the ion species component is raised in the low temperature plasma 10. On the other hand, when the output of the RF power source 32 is lowered, electrons of 10 to 15 eV or more in the plasma generation space 22 are reduced. And the production amount of the high-density plasma 20 decreases. As a result of the mixing, the ratio of the ion species component in the low temperature plasma 10 is lowered.
[0040]
Furthermore, when the output of the RF power supply 32 is slightly lowered while the output of the RF power supply 31 is increased, the following is obtained. First, as the output of the RF power source 31 is increased, the electron density in the plasma processing space 13 shifts to a higher density and higher energy side, and low-temperature plasma in the plasma processing space 13 increases. This increases the radical concentration there, but at the same time increases the ion ratio slightly. Next, as the output of the RF power source 32 is reduced, the electron density in the plasma generation space 22 shifts to a low density and low energy side, and the high density plasma in the plasma generation space 22 is slightly reduced. As a result, the radical concentration and the ion ratio are lowered. However, since the high energy component is originally large, the ion ratio is greatly lowered even if the output is slightly reduced. When such a high-density plasma 20 is mixed with the low-temperature plasma 10 in the plasma processing space 13, the increase or decrease in the ion ratio is almost offset, while the radical concentration increases. That is, the plasma concentration of the low temperature plasma 10 is increased without much changing the ratio of the radical species component and the ion species component. Similarly, when the outputs of the RF power sources 31 and 32 are increased or decreased in the opposite direction, the plasma concentration of the low temperature plasma 10 is lowered.
[0041]
Thus, in the low temperature plasma 10, the ratio between the radical species component and the ion species component is easily variably controlled over a wide range. Moreover, even if the ratio is controlled to any ratio, the low temperature plasma 10 is maintained in a uniform state up to the edge. In this apparatus, since the cross-sectional area of the plasma generation space 22 is much smaller than the cross-sectional area of the plasma processing space 13 and the first ratio is much smaller than the second ratio, the high-density plasma 20 In addition to being quickly sent out from the plasma generation space 22 to the plasma processing space 13, the amount of gas that flows back into the plasma generation space 22 from the plasma processing space 13 is small so that the processing gas B is directly excited by the high-density plasma 20. It is almost never decomposed or ionized until it is undesired.
[0042]
Further, apart from the inclined outermost plasma generation space 22, a permanent magnet 25 and a coil 24 are arranged between the side walls in addition to the inner multiple plasma generation space 22 except for the plasma generation space 22. Since the number of magnetic members is less than that required when the permanent magnets 25 and the like are arranged on both the inside and outside of the generation space 22, it is possible to contribute to facilitating the manufacture of the plasma processing apparatus and cost reduction.
[0043]
A second embodiment of the plasma generator of the present invention, whose longitudinal cross-sectional view is shown in FIG. 7, will be described. This differs from the first embodiment described above in that not only the edge portion but also the inner plasma generation space 22 is slightly inclined so that the entire second mechanism and the anode portion 11 have a flat dome shape. It is. In this case, the plasma density gradually decreases from the central portion to the edge portion, although not as remarkable as that at the edge portion, can be considerably improved.
[0044]
A third embodiment of the plasma generator of the present invention, whose longitudinal cross-sectional view is shown in FIG. 8, will be described. This is different from the first embodiment described above in that the edge of the anode portion 11 is thickened and only the communication port 14 is inclined, thereby avoiding the inclination of the plasma generation space 22 itself. It is a point. In this case, the number of members can be further reduced by sharing the permanent magnet 25 and the like while maintaining the advantages described above for the first embodiment.
[0045]
A third embodiment of the plasma generating apparatus of the present invention, whose longitudinal sectional view and plan view are shown in FIG. 9, will be described. This differs from the second embodiment described above in that the anode portion 11 has a plurality of oblique communication ports 14a perforated among the flat plate portion and the communication port 14 to which the plasma generation chamber 21 is attached in order to facilitate the processing of the oblique holes. The anode edge ring 11a is manufactured separately, and the communication port 14a is formed so as to incline in the direction in which the central point is viewed to the left. Thus, in this plasma generator, the inwardly inclined communication port 14a is inclined so as to deviate in the same rotational direction as viewed from the center. In this case, the low temperature plasma 10 flows in a stable state similar to high atmospheric pressure while rotating slightly counterclockwise.
[0046]
【The invention's effect】
As is clear from the above description, in the plasma generating apparatus of the first solving means of the present invention, new plasma is supplied to the plasma generating apparatus while mitigating rapid outflow at the periphery / periphery. Thus, there is an advantageous effect that a plasma generator that supplies uniform plasma can be realized.
[0047]
Further, in the plasma generating apparatus of the second solving means of the present invention, since the rotational force is also applied to the inward plasma blowing, the uniformity in space and time is improved, There is an advantageous effect that a plasma generator that supplies more uniform plasma can be realized.
[0048]
Furthermore, in the plasma generating apparatus of the third solving means of the present invention, the inflow of gas from the plasma processing space to the plasma generating space can be achieved by devising the shape and arrangement of the plasma generating space and the magnetic member. It has an advantageous effect of being able to realize a plasma generator that supplies uniform and high-quality plasma and that can be easily manufactured as a result. .
[0049]
Further, in the plasma generating apparatus of the fourth solving means of the present invention, it is possible to provide a higher quality plasma by preventing the reactive gas from being directly exposed to the high density plasma. There is an advantageous effect that it has become possible.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a plasma generator according to a first embodiment of the present invention.
FIG. 2 is a longitudinal sectional perspective view around the plasma generation space.
FIG. 3 is an enlarged view of one of the plasma generation spaces.
FIG. 4 is a modified example of the magnetic circuit.
FIG. 5 is a cross-sectional view showing a state where the vacuum chamber is mounted.
FIG. 6 is a graph showing the density distribution of low-temperature plasma.
FIG. 7 is a longitudinal sectional view of a second embodiment of the plasma generator of the present invention.
FIG. 8 is a longitudinal sectional view of a third embodiment of the plasma generating apparatus of the present invention.
FIG. 9 is a longitudinal sectional view and a plan view of a fourth embodiment of the plasma generating apparatus according to the present invention.
[Explanation of symbols]
1 Workpiece
2 Vacuum chamber body
3 Vacuum chamber lid
4 Variable valve
5 Vacuum pump
10 Low temperature plasma
11 Anode section (first mechanism; first application circuit)
11a Anode edge ring (first mechanism; first application circuit)
12 Cathode (first mechanism; first application circuit)
13 Plasma processing space
14 Communication port (communication passage)
14a Communication port (communication passage)
15 Processing gas supply port
20 High density plasma
21 Plasma generation chamber (second mechanism)
21a Gas distribution member (second mechanism)
22 Plasma generation space
23 Gas supply path for plasma
24 Coil (second application circuit)
25 Permanent magnet (Magnetic member for magnetic circuit)
26 Magnetic flux lines (magnetic circuit)
31 RF power supply (first application circuit)
32 RF power supply (second application circuit)
A Argon gas (non-reactive gas, plasma generating gas)
B CF gas (reactive gas, processing gas)

Claims (3)

A first mechanism formed with a plasma processing space; and a second mechanism attached to or integrated with the first mechanism to form a plasma generation space, the plasma generation space being the plasma processing space. In a plasma generator adjacent to and communicating with a space,
Since the opening of the plasma generation space is fixed so as to overlap the communication port of the anode portion disposed above the first mechanism, the communication path from the plasma generation space to the plasma processing space is dispersed. The plasma generating apparatus is characterized in that the communication port located outside of the communication path is inclined inward by inclining the edge / periphery of the anode part. . A magnetic member provided on the second mechanism side and attached to the plasma generation space, wherein a plurality of the plasma generation space and the magnetic member are provided along a surface adjacent to the plasma processing space; 2. The plasma generator according to claim 1 , wherein all of them are alternately running in parallel. The plasma generating apparatus according to claim 1 or 2 , wherein only the non-reactive gas is supplied to the plasma generating space.

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