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JP3781118B2 - Wiring board manufacturing method - Google Patents

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Publication number
JP3781118B2
JP3781118B2 JP2003055641A JP2003055641A JP3781118B2 JP 3781118 B2 JP3781118 B2 JP 3781118B2 JP 2003055641 A JP2003055641 A JP 2003055641A JP 2003055641 A JP2003055641 A JP 2003055641A JP 3781118 B2 JP3781118 B2 JP 3781118B2
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layer
wiring
receiving layer
wiring board
fine particles
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JP2003055641A
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JP2004266130A (en
Inventor
哲也 大槻
弘文 黒沢
浩 三木
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2003055641A priority Critical patent/JP3781118B2/en
Priority to CNB2004100082084A priority patent/CN1301048C/en
Priority to US10/792,266 priority patent/US7189598B2/en
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Description

【０００１】
【発明の属する技術分野】
本発明は、配線基板及びその製造方法、半導体装置並びに電子機器に関する。
【０００２】
【発明の背景】
従来、プリント配線板は、基材に銅箔を貼りエッチングにより配線を形成することで製造されていた。これによれば、プロセスが複雑であり、エッチングのために、高価なマスクが必要であるし、多くの設備が必要であった。そこで、近年、表面処理の施された基材に金属インクを吐出して配線を形成する技術が開発されている。表面処理として、フッ素被膜を基材に形成し（ＦＡＳ（Fluoric Alkyl Silane）処理）、これを多孔質にすることで金属インクの表面張力をコントロールする場合、配線と基材との密着性を高めることが難しかった。または、表面処理として、ポリビニルアルコールを基材に塗布して膨潤性を有する受理層を形成する方法や、水酸化アルミニウムを基材に塗布して空隙を有する受理層を形成する方法では、受理層は吸水性が高いために水分を含みやすく内層として好ましくない。また、配線と基材との密着性を高めることも難しかった。
【０００３】
本発明の目的は、信頼性の高い配線基板を簡単に製造することにある。
【０００４】
【課題を解決するための手段】
（１）本発明に係る配線基板の製造方法は、熱硬化性樹脂前駆体により受理層を形成すること、
前記受理層上に、導電性微粒子を含む分散液により、配線層を形成すること、及び、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させる熱を、前記受理層及び前記配線層に供給すること、
を含む。本発明によれば、導電性微粒子を含む分散液を設けるときに、受理層は未だ硬化反応する前の状態であるから、にじみや溜まり(Bulge)の発生を抑制することができる。また、熱硬化した受理層と、相互に結合した導電性微粒子を含む配線層とは密着性が高い。そのため、信頼性の高い配線基板を簡単に製造することができる。
（２）この配線基板の製造方法において、
前記熱硬化性樹脂前駆体としてポリイミド前駆体を使用し、前記熱によって前記ポリイミド前駆体を重合させてもよい。
（３）この配線基板の製造方法において、
前記導電性微粒子を含む前記分散液を吐出して前記配線層を形成してもよい。
（４）この配線基板の製造方法において、
前記受理層を基材上に形成してもよい。
（５）この配線基板の製造方法において、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させた後に、前記基材を前記受理層から除去することをさらに含んでもよい。
（６）本発明に係る配線基板は、上記方法によって製造されてなる。
（７）本発明に係る半導体装置は、上記配線基板と、
前記配線基板と電気的に接続された半導体チップと、
を有する。
（８）本発明に係る電子機器は、上記半導体装置を有する。
【０００５】
【発明の実施の形態】
以下、本発明の実施の形態について図面を参照して説明する。
【０００６】
（第１の実施の形態）
図１（Ａ）〜図３（Ｃ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。本実施の形態では、図１（Ａ）に示すように、熱硬化性樹脂前駆体（例えば、ポリイミド前駆体やエポキシ樹脂前駆体等の有機材料）によって、受理層１０を形成する。熱硬化反応前であるため、熱硬化性樹脂前駆体は、液状又はペースト状であってもよく、受理層１０は粘性を持っていてもよい。受理層１０を形成する材料は、感光性を有してもよい。受理層１０は、熱硬化性樹脂前駆体をスピンコートによって拡げることで形成してもよいし、熱硬化性樹脂前駆体の吐出（例えば、その液滴の吐出）によって形成してもよい。必要に応じて、受理層１０の乾燥（例えば、１５０℃で１０分間）を行ってもよい。受理層１０は、表面が平坦になるように形成してもよい。受理層１０は絶縁性を有し、（第１の）絶縁層ということができる。
【０００７】
受理層１０は、基材（例えば基板）１２上に形成してもよい。基材１２は、銅などの金属であってもよいし、ポリイミドやエポキシ等の樹脂であってもよいし、ガラスであってもよい。
【０００８】
図１（Ｂ）に示すように、受理層１０上に配線層（以下、第１の配線層ともいう。）１４を形成する。配線層１４は、導電性微粒子を含む分散液（例えば、金属インク）によって形成する。導電性微粒子は、金や銀等の酸化しにくく、電気抵抗の低い材料から形成されていてもよい。金の微粒子を含む分散液として、真空冶金株式会社の「パーフェクトゴールド」、銀の微粒子を含む分散液として、同社の「パーフェクトシルバー」を使用してもよい。なお、微粒子とは、特に大きさを限定したものではなく、分散媒とともに吐出できる粒子である。配線層１４の形成は、インクジェット法やバブルジェット（登録商標）法などの導電性微粒子を含む分散液の吐出（例えば、その液滴の吐出）によって行ってもよいし、マスク印刷やスクリーン印刷によって行ってもよい。導電性微粒子は、反応を抑制するために、コート材によって被覆されていてもよい。分散媒は、乾燥しにくく再溶解性のあるものであってもよい。導電性微粒子は、分散媒中に均一に分散していてもよい。
【０００９】
本実施の形態によれば、導電性微粒子を含む分散液は、熱硬化性樹脂前駆体上に設けられるので、配線層１４を形成するときに、にじみや溜まり(Bulge)の発生を抑制することができる。配線層１４を乾燥させて、分散媒を揮発させ、導電性微粒子（あるいは導電性微粒子及びコート材）を残してもよい。乾燥は、室温以上１００℃以下の温度で行ってもよい。または、受理層１０を構成する熱硬化性樹脂前駆体の熱硬化反応が生じない温度（例えば２００℃程度）で、配線層１４を加熱してもよい。これにより、導電性微粒子を被覆するコート材を分解してもよい。
【００１０】
図１（Ｃ）に示すように、受理層１０及び配線層１４に熱を供給する。熱は、受理層１０を構成する熱硬化性樹脂前駆体を硬化反応（例えば重合）させる温度（例えば、３００〜４００℃程度）であってもよい。熱は、配線層１４の導電性微粒子を相互に結合（例えば焼結）させる温度（例えば、３００〜６００℃程度）であってもよい。熱の供給時間は１時間程度であってもよい。こうすることで、熱硬化性樹脂前駆体は、不融不溶の樹脂（熱硬化性樹脂）となる。例えば、ポリイミド前駆体はポリイミドとなり、エポキシ樹脂前駆体はエポキシ樹脂となる。また、導電性微粒子は、導電膜又は導電層となる。熱硬化性樹脂前駆体が硬化し導電性粒子が相互に結合すると、受理層１０及び配線層１４は密着性が高くなるので、信頼性の高い配線基板が得られる。
【００１１】
図１（Ｄ）に示すように、配線層１４を覆うように、絶縁層（第２の絶縁層ともいう。）２０を形成してもよい。絶縁層２０の材料及び形成方法は、受理層１０の内容が該当してもよい。さらに、絶縁層２０は、感光性を有していてもよい。絶縁層２０を設ける場合、その前に少なくとも配線層１４から分散媒を揮発させておく。本実施の形態では、配線層１４の導電性微粒子を相互に結合（例えば焼結）させた後に絶縁層２０を形成する。
【００１２】
図２（Ａ）に示すように、絶縁層２０上にマスク層２２を形成してもよい。マスク層２２は、絶縁層２０に形成するコンタクトホール２４に対応するように形成する。例えば、光（例えば紫外線）に感応して硬化する材料で絶縁層２０を形成する場合、コンタクトホール２４の形成位置にマスク層２２を形成する。マスク層２２は、樹脂の吐出又は印刷によって形成してもよい。
【００１３】
図２（Ｂ）に示すように、絶縁層２０に光（例えば紫外線）を照射して、絶縁層２０のマスク層２２から露出した部分を硬化させる。この場合、絶縁層２０の硬化は、現像可能な程度に硬化しているが硬化反応（重合又は架橋結合）が完全に終わっていない状態（例えば粘性を有する状態）で止める。そして、現像を行って、図２（Ｃ）に示すように、絶縁層２０にコンタクトホール２４を形成する。
【００１４】
続いて、図２（Ｄ）に示すように、絶縁層２０上に第２の配線層２６を形成する。第２の配線層２６の材料及び形成方法は、上述した第１の配線層１４の内容が該当してもよい。第２の配線層２６に対して、絶縁層２０は、上述した受理層１０と同じ機能を果たすので、絶縁層２０を受理層ということもできる。第２の配線層２６は、コンタクトホール２４を介して、第１の配線層１４に接触するように形成する。第２の配線層２６を、導電性微粒子を含む分散液で形成する場合、これをコンタクトホール２４に吐出してもよい。
【００１５】
図３（Ａ）に示すように、熱を供給することによって、絶縁層２０を構成する材料を硬化反応させ、第２の配線層２６の導電性微粒子を相互に結合させてもよい。絶縁層２０及び第２の配線層２６は、受理層１０及び第１の配線層１４について上述した特徴を有し、同じ作用効果を達成してもよい。
【００１６】
図３（Ｂ）に示すように、第２の配線層２６を覆うように第３の絶縁層３０を形成してもよい。第３の絶縁層３０の材料及び形成方法は、絶縁層２０の内容が該当してもよい。また、第３の絶縁層３０にコンタクトホール３４を形成し、第２の配線層２６上にコンタクトポスト３６を形成してもよい。
【００１７】
図３（Ｃ）に示すように、コンタクトポスト３６上に端子部３８を形成してもよい。端子部３８は、コンタクトポスト３６の上面よりも大きくなるように形成してもよい。その場合、端子部３８の周縁部が第３の絶縁層３０上に載っていてもよい。端子部３８は、ＮｉやＣｕなどの無電解めっき等によって形成することができる。
【００１８】
さらに、図３（Ｃ）に示すように、基材１２を受理層１０から除去してもよい。例えば、基材１２として銅板を使用し、塩化第二鉄などのエッチング液に基材１２を浸漬してこれを溶解してもよい。この工程は、熱硬化性樹脂前駆体（受理層１０、第２及び第３の絶縁層２０，３０）を硬化反応させ、導電性微粒子（第１及び第２の配線層１４，２６）を相互に結合させた後に行う。こうすることで、薄膜積層配線基板が得られる。
【００１９】
本実施の形態によれば、熱硬化した受理層１０と、相互に結合した導電性微粒子を含む配線層１４との密着性が高い。そのため、信頼性の高い配線基板を簡単に製造することができる。
【００２０】
（第２の実施の形態）
図４（Ａ）〜図４（Ｃ）は、本発明の第２の実施の形態に係る配線基板の製造方法を説明する図である。本実施の形態では、上述した受理層１０上に配線層４０を形成する。また、上述した基材１２を使用してもよい。受理層１０及び配線層４０の材料及び形成方法は、第１の実施の形態で説明した内容を適用してもよい。配線層４０は、コンタクトポスト４２を有するように形成する。そして、配線層４０を覆うように絶縁層４４を形成する。絶縁層４４はコンタクトポスト４２を覆ってもよい。絶縁層４４の材料及び形成方法は、第１の実施の形態で説明した絶縁層２０の内容を適用してもよい。本実施の形態でも、受理層１０を熱硬化させ、配線層４０の導電性微粒子を相互に結合してから絶縁層４４を設ける。
【００２１】
図４（Ｂ）に示すように、絶縁層４４から少なくともコンタクトポスト４２の上面を露出させる。絶縁層４４が薄くなるようにその表面部を除去してもよい。絶縁層４４の表面部は溶解させてもよい。
【００２２】
図４（Ｃ）に示すように、絶縁層４４上に第２の配線層４６を形成する。第２の配線層４６の材料及び形成方法は、第１の実施の形態で説明した第２の配線層２６の内容を適用してもよい。第２の配線層４６に対して、絶縁層４４は、上述した受理層１０と同じ機能を果たすので、絶縁層４４を受理層ということもできる。第２の配線層２６は、コンタクトポスト４２上を通るように形成する。その後、第２の配線層４６の導電性微粒子を相互に結合させて、積層配線基板を製造することができる。本実施の形態には、第１の実施の形態で説明した内容を適用することができる。本実施の形態でも、第１の実施の形態で説明した作用効果を得ることができる。
【００２３】
（第３の実施の形態）
図５（Ａ）〜図５（Ｂ）は、本発明の第３の実施の形態に係る配線基板の製造方法を説明する図である。本実施の形態では、第２の実施の形態で説明したように、受理層１０上に配線層４０を形成し、その上に絶縁層４４を形成する。絶縁層４４は、コンタクトポスト４２を覆うように形成する。その他の詳細は、図４（Ａ）を参照して説明した内容と同じである。
【００２４】
図５（Ａ）に示すように、絶縁層４４を構成する熱硬化性樹脂前駆体を熱硬化させる前に、その上に第２の配線層５０を形成する。第２の配線層５０の材料及び形成方法は、第１の実施の形態で説明した第２の配線層２６の内容を適用してもよい。第２の配線層５０に対して、絶縁層４４は、上述した受理層１０と同じ機能を果たすので、絶縁層４４を受理層ということもできる。この状態で、第２の配線層５０とコンタクトポスト４２との間にも、絶縁層４４の一部が介在している。
【００２５】
図５（Ｂ）に示すように、絶縁層４４を熱硬化させ、第２の配線層５０の導電性微粒子を相互に結合させる。このとき、絶縁層４４を、熱硬化（重合）によって収縮させて、コンタクトポスト４２と第２の配線層５０の間から絶縁層４４を除去する。そして、コンタクトポスト４２と第２の配線層５０とを電気的に導通させる。こうして、積層配線基板を製造することができる。本実施の形態には、第１の実施の形態で説明した内容を適用することができる。本実施の形態でも、第１の実施の形態で説明した作用効果を得ることができる。
【００２６】
図６には、上述したいずれかの実施の形態で説明した配線基板１０００と、これに電気的に接続された半導体チップ１と、を有する半導体装置が示されている。この半導体装置を有する電子機器として、図７にはノート型パーソナルコンピュータ２０００が示され、図８には携帯電話３０００が示されている。
【００２７】
本発明は、上述した実施の形態に限定されるものではなく、種々の変形が可能である。例えば、本発明は、実施の形態で説明した構成と実質的に同一の構成（例えば、機能、方法及び結果が同一の構成、あるいは目的及び結果が同一の構成）を含む。また、本発明は、実施の形態で説明した構成の本質的でない部分を置き換えた構成を含む。また、本発明は、実施の形態で説明した構成と同一の作用効果を奏する構成又は同一の目的を達成することができる構成を含む。また、本発明は、実施の形態で説明した構成に公知技術を付加した構成を含む。
【図面の簡単な説明】
【図１】 図１（Ａ）〜図１（Ｄ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。
【図２】 図２（Ａ）〜図２（Ｄ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。
【図３】 図３（Ａ）〜図３（Ｃ）は、本発明の第１の実施の形態に係る配線基板の製造方法を説明する図である。
【図４】 図４（Ａ）〜図４（Ｃ）は、本発明の第２の実施の形態に係る配線基板の製造方法を説明する図である。
【図５】 図５（Ａ）〜図５（Ｂ）は、本発明の第３の実施の形態に係る配線基板の製造方法を説明する図である。
【図６】 図６は、本発明を適用した実施の形態に係る半導体装置を示す図である。
【図７】 図７は、本発明を適用した実施の形態に係る半導体装置を有する電子機器を示す図である。
【図８】 図８は、本発明を適用した実施の形態に係る半導体装置を有する電子機器を示す図である。
【符号の説明】
１…半導体チップ １０…受理層 １２…基材 １４…配線層 ２０…絶縁層２２…マスク層 ２４…コンタクトホール ２６…第２の配線層 ３０…第３の絶縁層 ３４…コンタクトホール ３６…コンタクトポスト ３８…端子部 ４０…配線層 ４２…コンタクトポスト ４４…絶縁層 ４６…第２の配線層 ５０…第２の配線層[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wiring board, a manufacturing method thereof, a semiconductor device, and an electronic apparatus.
[0002]
BACKGROUND OF THE INVENTION
Conventionally, printed wiring boards have been manufactured by attaching a copper foil to a base material and forming a wiring by etching. According to this, the process is complicated, an expensive mask is required for etching, and a lot of equipment is required. Therefore, in recent years, a technique for forming a wiring by discharging metal ink onto a surface-treated substrate has been developed. As a surface treatment, a fluorine coating is formed on the substrate (FAS (Fluoric Alkyl Silane) treatment), and when this is made porous, the surface tension of the metal ink is controlled, thereby improving the adhesion between the wiring and the substrate. It was difficult. Alternatively, as a surface treatment, a method for forming a receiving layer having a swelling property by applying polyvinyl alcohol to a base material, or a method for forming a receiving layer having voids by applying aluminum hydroxide to a base material, Is not preferable as an inner layer because of its high water absorption. It was also difficult to improve the adhesion between the wiring and the substrate.
[0003]
An object of the present invention is to easily manufacture a highly reliable wiring board.
[0004]
[Means for Solving the Problems]
(1) The method for manufacturing a wiring board according to the present invention includes forming a receiving layer with a thermosetting resin precursor,
Forming a wiring layer on the receiving layer with a dispersion containing conductive fine particles; and
Supplying the heat receiving layer and the wiring layer with heat that causes the thermosetting resin precursor to cure and bond the conductive fine particles to each other;
including. According to the present invention, when the dispersion liquid containing conductive fine particles is provided, the receiving layer is still in a state before undergoing a curing reaction, and therefore, the occurrence of bleeding and bulge can be suppressed. Further, the heat-cured receiving layer and the wiring layer containing conductive fine particles bonded to each other have high adhesion. Therefore, a highly reliable wiring board can be easily manufactured.
(2) In this method of manufacturing a wiring board,
A polyimide precursor may be used as the thermosetting resin precursor, and the polyimide precursor may be polymerized by the heat.
(3) In this method of manufacturing a wiring board,
The wiring layer may be formed by discharging the dispersion containing the conductive fine particles.
(4) In this method of manufacturing a wiring board,
The receiving layer may be formed on the substrate.
(5) In this method of manufacturing a wiring board,
It may further include removing the base material from the receiving layer after curing the thermosetting resin precursor and bonding the conductive fine particles to each other.
(6) The wiring board according to the present invention is manufactured by the above method.
(7) A semiconductor device according to the present invention comprises the above wiring board;
A semiconductor chip electrically connected to the wiring board;
Have
(8) An electronic device according to the present invention includes the semiconductor device.
[0005]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0006]
(First embodiment)
FIG. 1A to FIG. 3C are diagrams for explaining a method of manufacturing a wiring board according to the first embodiment of the present invention. In the present embodiment, as shown in FIG. 1A, the receiving layer 10 is formed of a thermosetting resin precursor (for example, an organic material such as a polyimide precursor or an epoxy resin precursor). Since it is before the thermosetting reaction, the thermosetting resin precursor may be liquid or pasty, and the receiving layer 10 may have viscosity. The material forming the receiving layer 10 may have photosensitivity. The receiving layer 10 may be formed by spreading a thermosetting resin precursor by spin coating, or may be formed by discharging a thermosetting resin precursor (for example, discharging its droplets). If necessary, the receiving layer 10 may be dried (for example, at 150 ° C. for 10 minutes). The receiving layer 10 may be formed so that the surface becomes flat. The receiving layer 10 has insulating properties and can be referred to as a (first) insulating layer.
[0007]
The receiving layer 10 may be formed on a base material (for example, a substrate) 12. The substrate 12 may be a metal such as copper, a resin such as polyimide or epoxy, or glass.
[0008]
As shown in FIG. 1B, a wiring layer (hereinafter also referred to as a first wiring layer) 14 is formed on the receiving layer 10. The wiring layer 14 is formed of a dispersion liquid (for example, metal ink) containing conductive fine particles. The conductive fine particles may be formed of a material that is difficult to oxidize, such as gold or silver, and has low electric resistance. “Perfect Gold” from Vacuum Metallurgical Co., Ltd. may be used as a dispersion containing gold fine particles, and “Perfect Silver” from the same may be used as a dispersion containing silver fine particles. The fine particles are not particularly limited in size, and are particles that can be discharged together with the dispersion medium. The wiring layer 14 may be formed by discharging a dispersion liquid containing conductive fine particles (for example, discharging the liquid droplets) such as an ink jet method or a bubble jet (registered trademark) method, or by mask printing or screen printing. You may go. The conductive fine particles may be coated with a coating material in order to suppress the reaction. The dispersion medium may be hard to dry and re-dissolvable. The conductive fine particles may be uniformly dispersed in the dispersion medium.
[0009]
According to the present embodiment, since the dispersion containing the conductive fine particles is provided on the thermosetting resin precursor, it is possible to suppress the occurrence of bleeding and accumulation (Bulge) when the wiring layer 14 is formed. Can do. The wiring layer 14 may be dried to volatilize the dispersion medium, leaving conductive fine particles (or conductive fine particles and a coating material). Drying may be performed at a temperature of room temperature to 100 ° C. Alternatively, the wiring layer 14 may be heated at a temperature at which the thermosetting reaction of the thermosetting resin precursor constituting the receiving layer 10 does not occur (for example, about 200 ° C.). Thereby, you may decompose | disassemble the coating material which coat | covers electroconductive fine particles.
[0010]
As shown in FIG. 1C, heat is supplied to the receiving layer 10 and the wiring layer 14. The heat may be a temperature (for example, about 300 to 400 ° C.) at which the thermosetting resin precursor constituting the receiving layer 10 undergoes a curing reaction (for example, polymerization). The heat may be a temperature (for example, about 300 to 600 ° C.) at which the conductive fine particles of the wiring layer 14 are bonded (for example, sintered) to each other. The heat supply time may be about 1 hour. By doing so, the thermosetting resin precursor becomes an infusible and insoluble resin (thermosetting resin). For example, the polyimide precursor is polyimide and the epoxy resin precursor is epoxy resin. The conductive fine particles become a conductive film or a conductive layer. When the thermosetting resin precursor is cured and the conductive particles are bonded to each other, the receiving layer 10 and the wiring layer 14 have high adhesion, so that a highly reliable wiring board can be obtained.
[0011]
As shown in FIG. 1D, an insulating layer (also referred to as a second insulating layer) 20 may be formed so as to cover the wiring layer 14. The material and forming method of the insulating layer 20 may correspond to the contents of the receiving layer 10. Furthermore, the insulating layer 20 may have photosensitivity. Before providing the insulating layer 20, the dispersion medium is volatilized at least from the wiring layer 14. In the present embodiment, the insulating layer 20 is formed after the conductive fine particles of the wiring layer 14 are bonded (for example, sintered) to each other.
[0012]
As shown in FIG. 2A, a mask layer 22 may be formed over the insulating layer 20. The mask layer 22 is formed so as to correspond to the contact hole 24 formed in the insulating layer 20. For example, when the insulating layer 20 is formed of a material that is cured in response to light (for example, ultraviolet rays), the mask layer 22 is formed at the position where the contact hole 24 is formed. The mask layer 22 may be formed by resin ejection or printing.
[0013]
As shown in FIG. 2B, the insulating layer 20 is irradiated with light (for example, ultraviolet rays) to cure the exposed portion of the insulating layer 20 from the mask layer 22. In this case, the curing of the insulating layer 20 is stopped in a state (for example, a viscous state) in which the insulating layer 20 is cured to the extent that it can be developed but the curing reaction (polymerization or cross-linking) is not completely completed. Then, development is performed to form a contact hole 24 in the insulating layer 20 as shown in FIG.
[0014]
Subsequently, as shown in FIG. 2D, a second wiring layer 26 is formed over the insulating layer 20. The material of the second wiring layer 26 and the formation method thereof may correspond to the contents of the first wiring layer 14 described above. Since the insulating layer 20 performs the same function as the receiving layer 10 described above with respect to the second wiring layer 26, the insulating layer 20 can also be referred to as a receiving layer. The second wiring layer 26 is formed so as to be in contact with the first wiring layer 14 through the contact hole 24. When the second wiring layer 26 is formed of a dispersion liquid containing conductive fine particles, it may be discharged into the contact hole 24.
[0015]
As shown in FIG. 3A, by supplying heat, the material constituting the insulating layer 20 may be cured and the conductive fine particles of the second wiring layer 26 may be bonded to each other. The insulating layer 20 and the second wiring layer 26 have the characteristics described above with respect to the receiving layer 10 and the first wiring layer 14, and may achieve the same effect.
[0016]
As shown in FIG. 3B, a third insulating layer 30 may be formed so as to cover the second wiring layer 26. The material of the third insulating layer 30 and the formation method thereof may correspond to the contents of the insulating layer 20. Alternatively, the contact hole 34 may be formed in the third insulating layer 30, and the contact post 36 may be formed on the second wiring layer 26.
[0017]
As shown in FIG. 3C, a terminal portion 38 may be formed on the contact post 36. The terminal portion 38 may be formed to be larger than the upper surface of the contact post 36. In that case, the peripheral edge portion of the terminal portion 38 may be placed on the third insulating layer 30. The terminal portion 38 can be formed by electroless plating such as Ni or Cu.
[0018]
Furthermore, the base material 12 may be removed from the receiving layer 10 as shown in FIG. For example, a copper plate may be used as the base material 12, and the base material 12 may be immersed in an etching solution such as ferric chloride to dissolve it. In this step, the thermosetting resin precursor (receiving layer 10, second and third insulating layers 20, 30) is cured and the conductive fine particles (first and second wiring layers 14, 26) are mutually bonded. This is done after binding. By doing so, a thin film laminated wiring board is obtained.
[0019]
According to the present embodiment, the adhesiveness between the thermosetting receiving layer 10 and the wiring layer 14 containing conductive fine particles bonded to each other is high. Therefore, a highly reliable wiring board can be easily manufactured.
[0020]
(Second Embodiment)
4A to 4C are views for explaining a method of manufacturing a wiring board according to the second embodiment of the present invention. In the present embodiment, the wiring layer 40 is formed on the receiving layer 10 described above. Moreover, you may use the base material 12 mentioned above. The materials described in the first embodiment may be applied to the materials and forming methods of the receiving layer 10 and the wiring layer 40. The wiring layer 40 is formed so as to have a contact post 42. Then, an insulating layer 44 is formed so as to cover the wiring layer 40. The insulating layer 44 may cover the contact post 42. As the material and the formation method of the insulating layer 44, the contents of the insulating layer 20 described in the first embodiment may be applied. Also in the present embodiment, the insulating layer 44 is provided after the receiving layer 10 is thermally cured and the conductive fine particles of the wiring layer 40 are bonded to each other.
[0021]
As shown in FIG. 4B, at least the upper surface of the contact post 42 is exposed from the insulating layer 44. The surface portion may be removed so that the insulating layer 44 becomes thin. The surface portion of the insulating layer 44 may be dissolved.
[0022]
As shown in FIG. 4C, a second wiring layer 46 is formed over the insulating layer 44. The material of the second wiring layer 46 and the formation method thereof may apply the contents of the second wiring layer 26 described in the first embodiment. Since the insulating layer 44 performs the same function as the receiving layer 10 described above with respect to the second wiring layer 46, the insulating layer 44 can also be referred to as a receiving layer. The second wiring layer 26 is formed so as to pass over the contact post 42. Thereafter, the conductive fine particles of the second wiring layer 46 can be bonded to each other to manufacture a laminated wiring board. The contents described in the first embodiment can be applied to this embodiment. Also in this embodiment, it is possible to obtain the effects described in the first embodiment.
[0023]
(Third embodiment)
FIG. 5A to FIG. 5B are diagrams for explaining a method of manufacturing a wiring board according to the third embodiment of the present invention. In the present embodiment, as described in the second embodiment, the wiring layer 40 is formed on the receiving layer 10 and the insulating layer 44 is formed thereon. The insulating layer 44 is formed so as to cover the contact post 42. Other details are the same as those described with reference to FIG.
[0024]
As shown in FIG. 5A, before thermosetting the thermosetting resin precursor constituting the insulating layer 44, the second wiring layer 50 is formed thereon. The material of the second wiring layer 50 and the formation method thereof may apply the contents of the second wiring layer 26 described in the first embodiment. Since the insulating layer 44 performs the same function as the receiving layer 10 described above with respect to the second wiring layer 50, the insulating layer 44 can also be referred to as a receiving layer. In this state, a part of the insulating layer 44 is also interposed between the second wiring layer 50 and the contact post 42.
[0025]
As shown in FIG. 5B, the insulating layer 44 is thermally cured to bond the conductive fine particles of the second wiring layer 50 to each other. At this time, the insulating layer 44 is contracted by thermosetting (polymerization), and the insulating layer 44 is removed from between the contact posts 42 and the second wiring layer 50. Then, the contact post 42 and the second wiring layer 50 are electrically connected. In this way, a laminated wiring board can be manufactured. The contents described in the first embodiment can be applied to this embodiment. Also in this embodiment, it is possible to obtain the effects described in the first embodiment.
[0026]
FIG. 6 shows a semiconductor device having the wiring board 1000 described in any of the above-described embodiments and the semiconductor chip 1 electrically connected thereto. As an electronic apparatus having this semiconductor device, a notebook personal computer 2000 is shown in FIG. 7, and a mobile phone 3000 is shown in FIG.
[0027]
The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.
[Brief description of the drawings]
FIG. 1A to FIG. 1D are diagrams for explaining a method for manufacturing a wiring board according to a first embodiment of the present invention.
FIGS. 2A to 2D are diagrams for explaining a method of manufacturing a wiring board according to the first embodiment of the present invention.
FIGS. 3A to 3C are diagrams for explaining a method of manufacturing a wiring board according to the first embodiment of the present invention.
FIGS. 4A to 4C are views for explaining a method of manufacturing a wiring board according to a second embodiment of the present invention.
FIGS. 5A to 5B are views for explaining a method of manufacturing a wiring board according to a third embodiment of the present invention.
FIG. 6 is a diagram illustrating a semiconductor device according to an embodiment to which the present invention is applied.
FIG. 7 is a diagram illustrating an electronic apparatus including the semiconductor device according to the embodiment to which the invention is applied.
FIG. 8 is a diagram showing an electronic apparatus having a semiconductor device according to an embodiment to which the invention is applied.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip 10 ... Receiving layer 12 ... Base material 14 ... Wiring layer 20 ... Insulating layer 22 ... Mask layer 24 ... Contact hole 26 ... 2nd wiring layer 30 ... 3rd insulating layer 34 ... Contact hole 36 ... Contact post 38 ... Terminal part 40 ... Wiring layer 42 ... Contact post 44 ... Insulating layer 46 ... Second wiring layer 50 ... Second wiring layer

Claims (5)

熱硬化性樹脂前駆体により、第１の受理層を形成すること、
前記第１の受理層上に、導電性微粒子を含む分散液により、コンタクトポストを有する第１の配線層を形成すること、
前記第１の受理層を熱硬化させ、前記第１の配線層の前記導電性微粒子を相互に結合した後に、前記第１の受理層及び前記第１の配線層上に、前記熱硬化性樹脂前駆体により、前記コンタクトポストを覆うように第２の受理層を形成すること、
前記導電性微粒子を含む前記分散液により、第２の配線層を、前記第２の受理層上に、前記第２の配線層と前記コンタクトポストの間に前記第２の受理層の一部が介在するように形成すること、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させる熱を、前記第２の受理層及び前記第２の配線層に供給し、前記熱によって前記第２の受理層を収縮させて前記第２の配線層と前記コンタクトポストの間から前記第２の受理層を除去して、前記第２の配線層と前記コンタクトポストを電気的に導通させること、
を含む配線基板の製造方法。Forming a first receiving layer with a thermosetting resin precursor;
Forming a first wiring layer having contact posts on the first receiving layer with a dispersion containing conductive fine particles;
After thermosetting the first receiving layer and bonding the conductive fine particles of the first wiring layer to each other, the thermosetting resin is formed on the first receiving layer and the first wiring layer. Forming a second receiving layer with the precursor so as to cover the contact post;
Due to the dispersion containing the conductive fine particles, a second wiring layer is formed on the second receiving layer, and a part of the second receiving layer is formed between the second wiring layer and the contact post. Forming to intervene,
Heat for causing the thermosetting resin precursor to cure and bonding the conductive fine particles to each other is supplied to the second receiving layer and the second wiring layer, and the second receiving layer is heated by the heat. The second receiving layer is removed from between the second wiring layer and the contact post to electrically connect the second wiring layer and the contact post;
A method of manufacturing a wiring board including: 請求項１記載の配線基板の製造方法において、
前記熱硬化性樹脂前駆体としてポリイミド前駆体を使用し、前記熱によって前記ポリイミド前駆体を重合させる配線基板の製造方法。In the manufacturing method of the wiring board of Claim 1,
A method of manufacturing a wiring board, wherein a polyimide precursor is used as the thermosetting resin precursor, and the polyimide precursor is polymerized by the heat. 請求項１又は請求項２記載の配線基板の製造方法において、
前記導電性微粒子を含む前記分散液を吐出して前記第１及び第２の配線層を形成する配線基板の製造方法。In the manufacturing method of the wiring board of Claim 1 or Claim 2,
A method of manufacturing a wiring board, wherein the first and second wiring layers are formed by discharging the dispersion containing the conductive fine particles. 請求項１から請求項３のいずれかに記載の配線基板の製造方法において、
前記第１の受理層を基材上に形成する配線基板の製造方法。In the manufacturing method of the wiring board in any one of Claims 1-3,
A method of manufacturing a wiring board, wherein the first receiving layer is formed on a base material. 請求項４記載の配線基板の製造方法において、
前記熱硬化性樹脂前駆体を硬化反応させ、前記導電性微粒子を相互に結合させた後に、前記基材を前記第１の受理層から除去することをさらに含む配線基板の製造方法。In the manufacturing method of the wiring board of Claim 4,
A method of manufacturing a wiring board, further comprising: removing the base material from the first receiving layer after curing the thermosetting resin precursor and bonding the conductive fine particles to each other.
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