[go: up one dir, main page]

JP3778597B2 - LED chip die bonding method - Google Patents

LED chip die bonding method Download PDF

Info

Publication number
JP3778597B2
JP3778597B2 JP26891695A JP26891695A JP3778597B2 JP 3778597 B2 JP3778597 B2 JP 3778597B2 JP 26891695 A JP26891695 A JP 26891695A JP 26891695 A JP26891695 A JP 26891695A JP 3778597 B2 JP3778597 B2 JP 3778597B2
Authority
JP
Japan
Prior art keywords
die
led chip
bonded
led
led chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26891695A
Other languages
Japanese (ja)
Other versions
JPH09116197A (en
Inventor
広昭 為本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP26891695A priority Critical patent/JP3778597B2/en
Publication of JPH09116197A publication Critical patent/JPH09116197A/en
Application granted granted Critical
Publication of JP3778597B2 publication Critical patent/JP3778597B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid
    • H01L2924/10158Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To allow high density die bonding with a plurality of LED chips cross to each other by die bonding the thinnest LED chip first out of a plurality of LED chips of different thickness. SOLUTION: To a base body 11, LED chips of different thickness are, through a bonding agent 13, die bonded in the order of thickness wherein the thinnest one first. In short, the thinner LED chip T1 is die bonded first, then the thicker LED chip T2 is die bonded. So, even if the thicker LED chip T2 is die bonded cross to the LED chip T1 die bonded already, since there exists height difference of Δh between the LED chips T1 and T2, the LED chip T1 is never touched with a die-bonder collet 12. Therefore, a plurality of LED chips are die bonded in high density. Further, since LED chips are die bonded cross to each other, mixture color of light emission is improved, and so, color variation and fluctuation in light emission characteristics are prevented.

Description

【0001】
【産業上の利用分野】
【0002】
本発明は、複数個のLEDチップを基板にダイボンドするための方法に関する。
【従来の技術】
【0003】
通常LEDチップはリードフレームやパッケージ等の基板にダイボンドされた後、基板に形成された一対のリード電極と電気的に接続されてLEDとなる。LEDチップを基板にダイボンドするには、通常ダイボンダーと呼ばれる自動機器が使用される。該ダイボンダーに備えられたダイボンダコレットは、LEDチップを一つずつ吸着運搬し、基板の所定の位置にダイボンドする。
【0004】
一般的にLEDは所望の配光特性を得るために、光源であるLEDチップを出来るだけ点光源に近い形とし、該LEDチップからの発光をレンズ及び反射鏡により、所望の配光特性に集光または散光させる方法が採用される。特に複数個のLEDチップが内包されたLEDにおいては、複数個のLEDチップを出来るだけ近接させて高密度にダイボンドする必要がある。
【発明が解決しようとする課題】
【0005】
しかしながら従来では、複数個のLEDチップをダイボンドする際、基板にダイボンドされた複数個のLEDチップの厚さが殆ど同じであるため、先にダイボンドされたLEDチップに近接するようにLEDチップをダイボンドしようとすると、該LEDチップを吸着運搬しているダイボンダコレットが、先にダイボンドされたLEDチップに接触してしまうため、先にダイボンドされたLEDチップの傷付、位置ズレの問題が発生する。このようなことから、従来の方法では複数個のLEDチップを近接させて高密度にダイボンドすることが不可能であるため、光源が離散的となり所望の配光特性を実現させることが困難であった。
【0006】
従って本発明は上記欠点を解決するために成されたものであり、その目的とするところは、複数個のLEDチップを近接させて高密度にダイボンドする方法を提供することにある。
【課題を解決するための手段】
【0007】
本発明のLEDチップのダイボンド方法は、複数個のLEDチップを基板にダイボンドするダイボンド方法において、上記複数個のLEDチップは厚さの異なるLEDチップであり、先にダイボンドしたLEDチップと後にダイボンドするLEDチップとのLEDチップ間の距離は、後にダイボンドするLEDチップを吸着運搬するダイボンドコレットの端と該後にダイボンドするLEDチップとの距離よりも近接しており、かつ、厚さの薄いLEDチップを、該厚さの薄いLEDチップの間にダイボンドされる厚さの厚いLEDチップよりも先にダイボンドすることを特徴とするLEDチップのダイボンド方法である。
【0008】
本発明では更に、上記複数個のLEDチップが、発光色の異なる2種類以上のLEDチップよりなる。上記LEDチップは、発光色の異なるLEDチップであれば何を用いても良いが、特に好ましくは、フルカラー発光に必要な赤色、緑色、青色の三種のLEDチップを用いる。
【作用】
【0009】
図7は従来のダイボンド方法を説明する模式断面図であり、LEDチップはダイボンダコレット32を用いて基板31に接着剤33を介してダイボンドされている。図のように従来のダイボンド方法では、隣接するLEDチップが同じ厚さであるため、LEDチップを先にダイボンドされたLEDチップに近接してダイボンドしようとすると、LEDチップを吸着運搬するダイボンダコレット32が、先にダイボンドされたLEDチップに接触してしまうため、先にダイボンドされたLEDチップの傷付、位置ズレが発生する。従って、従来では先にダイボンドされたLEDチップとダイボンダコレット32の接触を避けるため、LEDチップ間に適当な距離をおいてダイボンドする必要があった。
【0010】
図1は本発明のダイボンド方法を説明する模式断面図であり、基板11には厚さの異なるLEDチップが接着剤13を介して接着されている。本発明では、厚さの薄いLEDチップから順にダイボンドする。つまり、薄い方のLEDチップT1を先にダイボンドし、次に厚い方のLEDチップT2をダイボンドする。すると、厚い方のLEDチップT2を、先にダイボンドされたLEDチップT1に近接してダイボンドしても、図1に示すようにLEDチップT1とT2では表面高さに△hの差があるため、LEDチップT1にダイボンダコレット12が接触することはない。従って、複数個のLEDチップを高密度にダイボンドすることが可能となる。
【0011】
また、発光色の異なるLEDチップが備えられた多色発光素子においては、従来のようにLEDチップが離散的にダイボンドされていると、各LEDチップからの発光の混色不良が起こり、色ムラや発光特性の変動の原因となる。本発明では、発光色の異なる複数個のLEDチップを近接してダイボンドできるため、各発光チップからの発光の混色が良好となり、色ムラや発光特性の変動を防止できる。
【実施例】
【0012】
本発明のLEDチップのダイボンド方法を、実施例に基づき詳しく説明する。
[実施例1]
図2は本発明の方法によりダイボンドされたLEDチップの形態を示す模式断面図である。本実施例では、同一基板上に二種類の厚さのLEDチップをダイボンダコレットを用いてダイボンドする。まず二種類のLEDチップのうち、厚さの薄い方のLEDチップT1を先に基板11上にダイボンドする。次に、厚い方のLEDチップT2を、図2に示すように先にダイボンドされた薄い方のLEDチップT1の間にダイボンドする。尚、基板11には予め基板11とLEDチップとを接着する接着剤13が塗布されている。
[実施例2]
図3は本発明の方法によりダイボンドされたLEDチップの形態を示す模式断面図であり、図4は図3を発光観測面側から見た平面図である。本実施例でも実施例1と同様に二種類の厚さのLEDチップをダイボンドする。まず先に厚さの薄い方のLEDチップT1を基板11上にダイボンドする。次に、厚い方のLEDチップT2を、図3及び図4に示すように先にダイボンドされたLEDチップT1とジグザグ状になるようにダイボンドする。
[実施例3]
図5は本発明の方法によりダイボンドされたLEDチップの形態を示す模式断面図である。本実施例では、図5に示すように基板11には予め凹凸が設けられている。先に基板11の凹部にLEDチップT3をダイボンドし、次に凸部にLEDチップT3をダイボンドする。
【0013】
上記実施例1〜3では何れも、LEDチップをダイボンドする際、先にダイボンドされたLEDチップにダイボンダコレット12が接触することなく、LEDチップ同士を近接してダイボンドできるため、複数個のLEDチップを同一基板上に高密度にダイボンドすることができる。
[実施例4]
図6は本発明の方法によりダイボンドされたLEDチップの形態を示す模式断面図である。本実施例でダイボンドされるLEDチップは、緑色LEDチップT4、青色LEDチップT5、赤色LEDチップT6の三種であり、これら三種のLEDチップの厚さは、緑色および青色が80μm、赤色が150μmである。これらのLEDチップの内、厚さの薄い方、つまり緑色LEDチップT4と青色LEDチップT5を先にダイボンドする。次に、赤色LEDチップT6を緑色LEDチップT4と青色LEDチップT5の間にダイボンドして図6に示すようなチップ形態とする。
【0014】
本実施例では、実施例1〜3と同様に複数個のLEDチップを同一基板上に高密度にダイボンドできる。従って、ダイボンドされたLEDチップを基板と電気的に接続して得られた多色発光LEDは、前記実施例と同様に配光特性を容易に設定できるだけでなく、発光色の異なるLEDチップが高密度でダイボンドされているため、各発光色のLEDチップからの発光の混色が良くなり色ムラ等が起こらない。
【0015】
本実施例では、厚さが二種類のLEDチップを用いたが、三種類以上のLEDチップを用いてもよく、また基板に設ける凹凸も多段階にしてもよい。またLEDチップの発光色も、本実施例では赤、緑、青の三色のLEDチップを用いたが、特に限定するものではない。本発明のダイボンド方法は、二個以上のLEDチップをダイボンドする全ての場合に対応できる。
【発明の効果】
【0016】
以上説明したように、本発明のダイボンド方法によれば、LEDチップをダイボンドする際、先にダイボンドされたLEDチップにダイボンダコレットが接触することなく、複数個のLEDチップを高密度にダイボンドすることが可能となり、光源を従来よりも点光源に近づけることができる。従って、本発明を用いて得られたLEDは、光源が離散的でなく点光源に近いため、配光特性を容易に設定することができる。しかも、本発明ではLEDチップが密接的にダイボンドされるので、ダイボンドに要するスペースを小さくできるため、LEDの小型化が可能となる。
【0017】
また、発光色の異なるLEDチップがダイボンドされた多色発光LEDでは、各々のLEDチップからの発光の混色度合が高まり、色ムラや発光特性の変動を防止できるという利点もある。
【図面の簡単な説明】
【0018】
【図1】 図1は、本発明を説明する模式断面図である。
【図2】 図2は、本発明の一実施例を説明するLEDチップの形態を示す模式断面図である。
【図3】 図3は、本発明の一実施例を説明するLEDチップの形態を示す模式断面図である。
【図4】 図4は、本発明の一実施例を説明するLEDチップの形態を示す平面図である。
【図5】 図5は、本発明の一実施例を説明するLEDチップの形態を示す模式断面図である。
【図6】 図6は、本発明の一実施例を説明するLEDチップの形態を示す模式断面図である。
【図7】 図7は、従来のダイボンド方法を説明する模式断面図である。
【符号の説明】
【0019】
11・・・・基板
12・・・・ダイボンダコレット
13・・・・接着剤
[0001]
[Industrial application fields]
[0002]
The present invention relates to a method for die bonding a plurality of LED chips to a substrate.
[Prior art]
[0003]
Usually, an LED chip is die-bonded to a substrate such as a lead frame or a package, and then electrically connected to a pair of lead electrodes formed on the substrate to form an LED. In order to die-bond the LED chip to the substrate, an automatic device called a die bonder is usually used. The die bonder collet provided in the die bonder sucks and conveys the LED chips one by one and die-bonds to a predetermined position on the substrate.
[0004]
In general, in order to obtain a desired light distribution characteristic, an LED chip as a light source is made as close to a point light source as possible, and light emitted from the LED chip is collected to a desired light distribution characteristic by a lens and a reflecting mirror. A light or diffused method is employed. In particular, an LED including a plurality of LED chips needs to be die-bonded at a high density by bringing the plurality of LED chips as close as possible.
[Problems to be solved by the invention]
[0005]
However, conventionally, when a plurality of LED chips are die-bonded, the thickness of the plurality of LED chips die-bonded to the substrate is almost the same. Therefore, the LED chip is die-bonded so as to be close to the previously die-bonded LED chip. If it is going to do, since the die bonder collet which adsorb | sucks and conveys this LED chip will contact the LED chip | tip previously die-bonded, the problem of the damage | wound of the LED chip | tip previously die-bonded and position shift will generate | occur | produce. For this reason, in the conventional method, it is impossible to die-bond a plurality of LED chips close to each other at a high density, so that the light source becomes discrete and it is difficult to realize a desired light distribution characteristic. It was.
[0006]
Accordingly, the present invention has been made to solve the above-described drawbacks, and an object of the present invention is to provide a method of die bonding at a high density by bringing a plurality of LED chips close to each other.
[Means for Solving the Problems]
[0007]
The LED chip die-bonding method of the present invention is a die-bonding method in which a plurality of LED chips are die-bonded to a substrate, wherein the plurality of LED chips are LED chips having different thicknesses, and the first die-bonded LED chip and the later die-bonded. The distance between the LED chip and the LED chip is closer to the distance between the end of the die bond collet that sucks and conveys the LED chip to be die-bonded later and the LED chip to be die-bonded later, and a thin LED chip is used. The LED chip die-bonding method is characterized in that die bonding is performed before the thick LED chip die-bonded between the thin LED chips.
[0008]
In the present invention, the plurality of LED chips further include two or more types of LED chips having different emission colors. Any LED chip may be used as long as the LED chip has a different emission color, but three types of red, green, and blue LED chips necessary for full color emission are particularly preferably used.
[Action]
[0009]
FIG. 7 is a schematic cross-sectional view for explaining a conventional die bonding method. The LED chip is die-bonded to a substrate 31 with an adhesive 33 using a die bonder collet 32. As shown in the figure, in the conventional die-bonding method, adjacent LED chips have the same thickness. Therefore, when an LED chip is to be die-bonded close to the previously die-bonded LED chip, a die bonder collet 32 that sucks and conveys the LED chip. However, since it comes into contact with the previously die-bonded LED chip, the previously die-bonded LED chip is damaged and misaligned. Therefore, conventionally, in order to avoid contact between the LED chip previously die-bonded and the die bonder collet 32, it is necessary to die-bond with an appropriate distance between the LED chips.
[0010]
FIG. 1 is a schematic cross-sectional view for explaining the die bonding method of the present invention. LED chips having different thicknesses are bonded to a substrate 11 via an adhesive 13. In the present invention, die bonding is performed in order from the thin LED chip. That is, the thinner LED chip T1 is die-bonded first, and then the thicker LED chip T2 is die-bonded. Then, even if the thicker LED chip T2 is die-bonded close to the previously die-bonded LED chip T1, as shown in FIG. 1, there is a difference of Δh in the surface height between the LED chips T1 and T2. The die bonder collet 12 does not come into contact with the LED chip T1. Therefore, it becomes possible to die-bond a plurality of LED chips with high density.
[0011]
In addition, in a multicolor light emitting device provided with LED chips having different emission colors, if LED chips are discretely die-bonded as in the conventional case, color mixing failure of light emission from each LED chip occurs, and color unevenness or This causes fluctuations in the light emission characteristics. In the present invention, since a plurality of LED chips having different emission colors can be die-bonded close to each other, color mixture of light emission from each light-emitting chip is improved, and color unevenness and variation in light emission characteristics can be prevented.
【Example】
[0012]
The LED chip die-bonding method of the present invention will be described in detail based on examples.
[Example 1]
FIG. 2 is a schematic cross-sectional view showing the form of an LED chip die-bonded by the method of the present invention. In this embodiment, LED chips having two kinds of thickness are die-bonded on the same substrate using a die bonder collet. First, of the two types of LED chips, the thinner LED chip T1 is die-bonded on the substrate 11 first. Next, the thicker LED chip T2 is die-bonded between the thinner LED chip T1 die-bonded first as shown in FIG. The substrate 11 is preliminarily coated with an adhesive 13 that bonds the substrate 11 and the LED chip.
[Example 2]
FIG. 3 is a schematic cross-sectional view showing the form of an LED chip die-bonded by the method of the present invention, and FIG. 4 is a plan view of FIG. 3 viewed from the emission observation surface side. In this embodiment, as in the first embodiment, LED chips having two types of thickness are die-bonded. First, the thinner LED chip T1 is die-bonded on the substrate 11. Next, the thicker LED chip T2 is die-bonded so as to form a zigzag shape with the LED chip T1 previously die-bonded as shown in FIGS.
[Example 3]
FIG. 5 is a schematic cross-sectional view showing the form of an LED chip die-bonded by the method of the present invention. In the present embodiment, as shown in FIG. First, the LED chip T3 is die-bonded to the concave portion of the substrate 11, and then the LED chip T3 is die-bonded to the convex portion.
[0013]
In any of the first to third embodiments, when the LED chip is die-bonded, the die bonder collet 12 does not contact the previously die-bonded LED chip, and the LED chips can be close-bonded to each other. Can be die-bonded on the same substrate with high density.
[Example 4]
FIG. 6 is a schematic cross-sectional view showing the form of an LED chip die-bonded by the method of the present invention. There are three types of LED chips that are die-bonded in this embodiment: green LED chip T4, blue LED chip T5, and red LED chip T6. The thickness of these three types of LED chips is 80 μm for green and blue, and 150 μm for red. is there. Of these LED chips, the thinner one, that is, the green LED chip T4 and the blue LED chip T5 are die-bonded first. Next, the red LED chip T6 is die-bonded between the green LED chip T4 and the blue LED chip T5 to obtain a chip form as shown in FIG.
[0014]
In the present embodiment, a plurality of LED chips can be die-bonded at a high density on the same substrate as in the first to third embodiments. Therefore, the multi-color light emitting LED obtained by electrically connecting the die-bonded LED chip to the substrate can not only easily set the light distribution characteristics as in the above embodiment, but also the LED chip having a different light emission color can be set high. Since it is die-bonded at a density, the color mixture of light emitted from the LED chips of the respective light emission colors is improved and color unevenness does not occur.
[0015]
In this embodiment, two types of LED chips having a thickness are used, but three or more types of LED chips may be used, and the unevenness provided on the substrate may be multistage. In addition, the LED chip has three colors of red, green, and blue, but is not particularly limited. The die bonding method of the present invention can be applied to all cases in which two or more LED chips are die bonded.
【The invention's effect】
[0016]
As described above, according to the die-bonding method of the present invention, when the LED chip is die-bonded, a plurality of LED chips are die-bonded with high density without the die bonder collet contacting the previously die-bonded LED chip. The light source can be made closer to a point light source than in the past. Therefore, the LED obtained by using the present invention can easily set the light distribution characteristics because the light source is not discrete but close to a point light source. In addition, since the LED chip is closely die-bonded in the present invention, the space required for the die-bonding can be reduced, and the LED can be downsized.
[0017]
In addition, a multicolor light emitting LED in which LED chips having different light emitting colors are die-bonded has an advantage that the degree of color mixing of light emitted from each LED chip is increased, and color unevenness and variation in light emitting characteristics can be prevented.
[Brief description of the drawings]
[0018]
FIG. 1 is a schematic cross-sectional view illustrating the present invention.
FIG. 2 is a schematic cross-sectional view showing the form of an LED chip for explaining an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view showing the form of an LED chip for explaining an embodiment of the present invention.
FIG. 4 is a plan view showing the form of an LED chip for explaining an embodiment of the present invention.
FIG. 5 is a schematic cross-sectional view showing the form of an LED chip for explaining an embodiment of the present invention.
FIG. 6 is a schematic cross-sectional view showing the form of an LED chip for explaining an embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view for explaining a conventional die bonding method.
[Explanation of symbols]
[0019]
11 .... Substrate 12 .... Die bonder collet 13 .... Adhesive

Claims (2)

複数個のLEDチップを基板にダイボンドするダイボンド方法において、
前記複数個のLEDチップは厚さの異なるLEDチップであり、先にダイボンドしたLEDチップと後にダイボンドするLEDチップとのLEDチップ間の距離は、後にダイボンドするLEDチップを吸着運搬するダイボンドコレットの端と該後にダイボンドするLEDチップとの距離よりも近接しており、かつ、
厚さの薄いLEDチップを、該厚さの薄いLEDチップの間にダイボンドされる厚さの厚いLEDチップよりも先にダイボンドすることを特徴とするLEDチップのダイボンド方法。
In a die bonding method of die bonding a plurality of LED chips to a substrate,
The plurality of LED chips are LED chips having different thicknesses, and the distance between the LED chip that has been previously die-bonded and the LED chip that is later die-bonded is the end of the die bond collet that sucks and conveys the LED chip that is later die-bonded. And the distance between the LED chip to be die-bonded after that, and
A die bonding method for an LED chip, characterized in that a thin LED chip is die-bonded before a thick LED chip die-bonded between the thin LED chips.
前記複数個のLEDチップが、発光色の異なる2種類以上のLEDチップよりなる請求項1に記載のLEDチップのダイボンド方法。  The LED chip die-bonding method according to claim 1, wherein the plurality of LED chips include two or more kinds of LED chips having different emission colors.
JP26891695A 1995-10-18 1995-10-18 LED chip die bonding method Expired - Fee Related JP3778597B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26891695A JP3778597B2 (en) 1995-10-18 1995-10-18 LED chip die bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26891695A JP3778597B2 (en) 1995-10-18 1995-10-18 LED chip die bonding method

Publications (2)

Publication Number Publication Date
JPH09116197A JPH09116197A (en) 1997-05-02
JP3778597B2 true JP3778597B2 (en) 2006-05-24

Family

ID=17465065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26891695A Expired - Fee Related JP3778597B2 (en) 1995-10-18 1995-10-18 LED chip die bonding method

Country Status (1)

Country Link
JP (1) JP3778597B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10016817A1 (en) * 2000-04-05 2001-10-18 Mannesmann Vdo Ag Color head-up display, especially for a vehicle
KR20030024511A (en) * 2001-09-18 2003-03-26 디엔씨엔지니어링 주식회사 Head part of led die bonder
JP2007165594A (en) * 2005-12-14 2007-06-28 Denso Corp Mounting method of electronic parts
KR20090055272A (en) * 2007-11-28 2009-06-02 삼성전자주식회사 LED package, manufacturing method thereof, and backlight assembly including the same
CN107369639B (en) * 2017-07-27 2024-02-20 深圳新益昌科技股份有限公司 A kind of connected LED die-bonding machine

Also Published As

Publication number Publication date
JPH09116197A (en) 1997-05-02

Similar Documents

Publication Publication Date Title
JP3785820B2 (en) Light emitting device
EP1169735B1 (en) Semiconductor radiation emitter package
TWI395342B (en) Light-emitting module and structure substrate used therewith
CN101248535B (en) Light emitting diodes and lasers diodes with color converters
JP3627822B2 (en) Semiconductor light emitting device and manufacturing method thereof
US6642545B2 (en) Semiconductor light emitting device
US7126163B2 (en) Light-emitting diode and its manufacturing method
US20070096140A1 (en) Sealing structure for a white light LED
JP2001298216A (en) Surface mount type semiconductor light emitting device
JP3778597B2 (en) LED chip die bonding method
EP1850399A1 (en) Sealing structure for a white light emitting diode
JPH0715046A (en) Injection molded printed circuit board
JPH07235624A (en) Led lamp
US20070096136A1 (en) Cladding layer structure of a LED package structure
JP2000277808A (en) Light source device and its manufacture
US11677053B2 (en) Method of manufacturing light emitting element
JP2005340494A (en) Light emitting diode lamp
JP4943005B2 (en) Thin light emitting diode lamp and manufacturing method thereof
JPH05114751A (en) Optical semiconductor device
JPH06196759A (en) Light-emitting devices
JP4144676B2 (en) Manufacturing method of chip type light emitting diode
KR20200141020A (en) LED display structure
US20020063257A1 (en) Flat package for semiconductor diodes
US20030102527A1 (en) Method of fabricating light emitting diode package
JPH10321906A (en) Light-emitting diode and display device using the same

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060131

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060228

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090310

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100310

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110310

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120310

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120310

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120310

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130310

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140310

Year of fee payment: 8

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees