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JP3753685B2 - Wire bonding method - Google Patents

Wire bonding method Download PDF

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Publication number
JP3753685B2
JP3753685B2 JP2002272617A JP2002272617A JP3753685B2 JP 3753685 B2 JP3753685 B2 JP 3753685B2 JP 2002272617 A JP2002272617 A JP 2002272617A JP 2002272617 A JP2002272617 A JP 2002272617A JP 3753685 B2 JP3753685 B2 JP 3753685B2
Authority
JP
Japan
Prior art keywords
electrode
wire
capillary
semiconductor element
bonding
Prior art date
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Expired - Fee Related
Application number
JP2002272617A
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Japanese (ja)
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JP2004111677A (en
Inventor
良彦 牟田口
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2002272617A priority Critical patent/JP3753685B2/en
Publication of JP2004111677A publication Critical patent/JP2004111677A/en
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Publication of JP3753685B2 publication Critical patent/JP3753685B2/en
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は電極間をワイヤで接続するワイヤボンディング方法に関し、より詳細にはスティッチボンディングした部分に重ねてボールボンディングを行ってワイヤと電極との固着を補強するワイヤボンディング方法に関するものである。
【０００２】
【従来の技術】
近年、半導体発光装置を始め半導体装置の薄型化が種々検討されている。その中の一つの方法として、図５に示すような半導体素子３を回路基板１に実装する場合に、回路基板１に形成された電極２にワイヤ４をボールボンディングした後、半導体素子３の上面電極３１にスティッチボンディングするワイヤボンディング方法が提案されている（例えば特許文献１参照）。この提案されているワイヤボンディング方法によれば、ボールボンディング部Ｂにおいて生じるワイヤ４の立ち上がり部分が、ちょうど半導体素子３の高さで相殺されるかたちになるので、半導体素子３の上面電極３１にワイヤ４を第１ボンドした後、回路基板１の電極２に第２ボンドしていた従来の方法に比べて半導体装置の一層の薄型化を図ることができる。
【０００３】
一方、このワイヤボンディング方法は、ボンディングに方向性がなく作業性に優れているものの、スティッチボンディング部Ｓはボールボンディング部Ｂに比べ圧着面積が小さく、また圧着部の厚さが薄いため、接合強度が弱いという本質的な問題があった。本発明者が経験したところによれば、その理由は未だ明らかになっていないが、半導体素子の上面電極にワイヤをスティッチボンディングした場合に、特にワイヤが切れやすいという問題があった。
【０００４】
そこで、スティッチボンディング部Ｓの固着強度を大きくすることを目的として、スティッチボンディング部Ｓに重ねてボールボンディングを行うことが提案されている（例えば参考文献２）。
【０００５】
【特許文献１】
特開２００１−１５５４２号公報（特許請求の範囲の欄、図２）
【特許文献２】
特開平１１−１６３０２６号公報（特許請求の範囲の欄、図２）
【０００６】
【発明が解決しようとする課題】
この方法を図５に示したワイヤボンディング方法に適用すると、ワイヤの固着強度は確かに大きくなるが、図６に示すように、ボールボンディング部Ｂ2にワイヤの立ち上がり部分（突起）６が不可避的に残るため、半導体装置の薄型化という目的が充分には達成できなかった。
【０００７】
本発明はこのような従来の問題に鑑みてなされたものであり、その目的とするところは、ワイヤと電極との固着、特にワイヤと半導体素子の上面電極との固着を強くでき、且つ半導体装置の薄型化を図れるワイヤボンディング方法を提供することにある。
【０００８】
また本発明の目的は、新たな設備を必要とせず、また装置の生産性を低下させることなくワイヤと電極とを強く固着できるワイヤボンディング方法を提供することにある。
【０００９】
【課題を解決するための手段】
本発明によれば、キャピラリを用いてワイヤを第１電極にボールボンディングした後、前記キャピラリからワイヤを繰り出しながら前記キャピラリを、半導体素子の上面に形成された、前記第１電極よりも高い位置にある第２電極上に移動させ、この第２電極にワイヤをスティッチボンディングした後、第２電極の前記スティッチボンディングした部分に重ねてボールボンディングを行うワイヤボンディング方法において、前記キャピラリ先端部のフェイス面の半径を、前記半導体素子の上面外周辺から前記第２電極のボールボンディング跡の中心までの最短距離よりも長くするとともに、フェイス面に１５°以下の傾斜をもたせ、前記第２電極のボールボンディング跡に形成される突起を、前記フェイス面で押しつぶすことを特徴とするワイヤボンディング方法が提供される。
【００１０】
【発明の実施の形態】
本発明者は、スティッチボンディングした部分の固着強度を上げるために、従来と同様にスティッチボンディングした部分に重ねてボールボンディングを行うこととし、これを前提に第２電極にボールボンディングを行うことにより生じる問題、すなわち第２電極のボールボンディング跡に形成される突起を除去できないか検討をした。突起を単に除去するだけならば、例えばワイヤボンディング工程の後に押さえ治具で突起を押しつぶす、あるいは切断治具で突起を切断すればよいが、突起を押しつぶすあるいは切断するためには新たな設備が必要となり、また装置の生産性の低下を招く。そこで既存の設備で前記突起を除去できないかさらに検討した結果、ワイヤボンディング工程で用いられているキャピラリに着目し、このキャピラリを用いて前記突起を押しつぶせばよいことを見出し本発明をなすに至った。
【００１１】
すなわち、本発明のワイヤボンディング方法の大きな特徴の一つは、キャピラリ先端部のフェイス面で前記突起を押しつぶすことにある。かかる構成によれば、新たな設備を導入することなくキャピラリの移動制御を変更するだけで前記突起をなくすことができ、生産性の低下も抑えられる。
【００１２】
また本発明のもう一つの大きな特徴は、キャピラリのフェイス面の半径を、半導体素子の上面外周辺から第２電極のボールボンディング跡の中心までの最短距離よりも長くしたことにある。図７に示すように、従来のキャピラリ５’のフェイス面５１’は半導体素子３の幅よりも小さかったため、フェイス面５１’で前記突起６を押しつぶそうとすると、次のワイヤボンディングのために準備されているキャピラリ先端の金属ボールｂが半導体素子３と接触するおそれがあった。そこで本発明では、キャピラリのフェイス面の半径を、半導体素子の上面外周辺から前記第２電極のボールボンディング跡の中心までの最短距離よりも長くし、フェイス面で前記突起を押しつぶす際に、キャピラリ先端に形成された金属ボールと半導体素子とが接触しないようにした。なお、半導体素子の上面外周辺から第２電極のボールボンディング跡の中心までの最短距離とは、図８に示すように、ボールボンディング跡の中心Ｏから、半導体素子３の直近の外周辺に下ろした垂線の長さをいう。
【００１３】
本発明で用いるキャピラリは、前記フェイス面の半径を有すると同時に、スティッチボンディングにおいてワイヤを電極に強固に固着する観点からは、フェイス面に１５°以下の傾斜をもたせる必要がある。フェイス面の傾斜角が１５°より大きいと、フェイス面を介してワイヤに押圧力が充分に加わらず、電極へのワイヤの接着が不十分となるおそれがあるからである。なおフェイス面の傾斜角とは、キャピラリ先端における軸方向に垂直な平面とフェイス面とのなす角をいう。
【００１４】
本発明のワイヤボンディング方法の一例を図１に示す。なお、この実施形態ではチップ型半導体装置の場合のワイヤボンディング方法を説明しているが、本発明のワイヤボンディング方法はチップ型半導体装置に限定されるものではなく、従来公知の半導体素子のワイヤボンディングに用いることができる。
【００１５】
まず、トーチ電極（不図示）からの放電によって、キャピラリ５先端部の開口部から露出したワイヤ４の先端に金属ボールｂを成形する（図１（ａ））。そしてキャピラリ５を降下させて、基板１上に形成された電極（第１電極）２に、ワイヤ先端の金属ボールｂを押し付けて、超音波振動を加えながら金属ボールｂを電極２に固着させる（ボールボンディング、同図（ｂ））。次に、キャピラリ５を、半導体素子３の高さよりも少し高い位置まで上昇させながら、基板１上の電極２’に固着された半導体素子３の上方に移動させた後（同図（ｃ））、キャピラリ５を下降させて上面電極（第２電極）３１に押し当て、所定の荷重を掛けると同時に超音波振動を加えワイヤ４を上面電極３１に固着させる（スティッチボンディング、同図（ｄ））。その後ワイヤ４をクランプした状態でキャピラリ５を上方に移動させてワイヤ４を切断する（同図（ｅ））。
【００１６】
次にもう一度、トーチ電極（不図示）からの放電によって、ワイヤ４の先端に金属ボールｂを成形する（図２（ｆ））。そしてキャピラリ５を降下させて、半導体素子３の上面電極３１のスティッチボンディング部Ｓに、ワイヤ先端の金属ボールｂを押し付けて、超音波振動を加えながら金属ボールｂをスティッチボンディング部Ｓに固着させる（同図（ｇ））。これによりワイヤ４と上面電極３１との固着が格段に強くなる。次に、ワイヤ４をクランプした状態でキャピラリ５を上方に移動させてワイヤ４を切断する。このとき、上面電極３１のボールボンディング部Ｂ2にワイヤ４の立ち上がり部分（突起）６が残る（同図（ｈ））。
【００１７】
次のワイヤボンディングのための金属ボールｂをワイヤ４の先端に成形した後、突起６の垂直上方にキャピラリ５のフェイス面５１が位置し、且つ金属ボールｂが半導体素子３に接触しない程度キャピラリ５を水平方向に移動させる（同図（ｉ））。次に、キャピラリ５を下方に移動させて、キャピラリ５のフェイス面５１で突起６を押しつぶす（同図（ｊ））。これにより従来装置の薄型化の障害となっていた突起６をなくすことができ、装置の薄型化が図れると同時に、ワイヤ４と上面電極３１との固着をより強力にできる。そして次の電極間をワイヤボンディングするためにキャピラリ５を移動させる（同図（ｋ））。
【００１８】
突起６を押しつぶす際のキャピラリ５の移動制御は、例えば上面電極３１にボールボンディングを行った時にキャピラリ５の平面位置と高さとを記憶しておき、その平面位置情報に基づき、その金属ボールｂが半導体素子３に接触しない程度までキャピラリ５を水平方向に移動させ、そして前記高さ情報に基づき、キャピラリ５の下方への移動距離を制御する。このような移動制御によれば、上面電極３１の位置や高さがばらついても前記突起６をフェイス面５１で確実に押しつぶすことができる。もちろん、キャピラリや上面電極の位置をカメラにより画像として取り込んでデータ処理を行ってキャピラリの移動制御を行っても構わない。
【００１９】
一つの半導体素子にワイヤボンディングすべき電極が複数ある場合、ボールボンディング部Ｂ2の突起６のキャピラリ５による押しつぶしは、すべての電極間をワイヤボンディングした後に行ってもよいし、一つの電極間をワイヤボンディングした後ごとに順次行ってもよい。キャピラリ５の移動距離を短くし生産効率の上げる観点からは後者が望ましい。
【００２０】
次に、本発明のワイヤボンディング方法を、複数の上面電極が形成されているＩＣなどの半導体素子に用いる場合について説明する。図３の半導体装置では、同図（ａ）に示すように、半導体素子３’の上面外周辺に沿って複数の第２電極３１が配設され、この半導体素子３’の周囲を取り巻くように、第２電極３１に対応する第１電極（リード）２が配設されている。そしてそれぞれ対応する第１電極２と第２電極３１とはワイヤ４で接続される。ワイヤボンディングは前述の通り、キャピラリを用いてまずワイヤ４を第１電極２にボールボンディングし、次に第２電極３１にスティッチボンディングした後、さらにスティッチボンディングした部分に重ねてワイヤをボールボンディングする。そして第２電極３１に形成された突起６はキャピラリ５のフェイス面５１で押しつぶすが、このときキャピラリの先端に形成されている金属ボールｂが半導体素子３’およびボンディングしたワイヤ４と接触しないようにするため、図３（ｂ）に示すように、キャピラリ５の軸中心の平面位置は半導体素子３’の側端外方の、ボンディングしたワイヤ４から見て次にボンディングする電極側するのが好ましい。
【００２１】
また半導体素子３”が、図４（ａ）に示すような上面中央部に長方形の凹部３２が形成されたものである場合、キャピラリ５のフェイス面５１で突起６を押しつぶすときには、同図（ｂ）に示すように、キャピラリ５を半導体素子３”の内方に移動させ、キャピラリ５の先端に形成されている金属ボールｂが前記凹部３２に入るようにするのが好ましい。このようにキャピラリ５を移動制御することにより、金属ボールｂが半導体素子３”およびボンディングされたワイヤと接触せず、またキャピラリのフェイス面の径をできるだけ小さくすることができる。
【００２２】
【発明の効果】
本発明のワイヤボンディング方法では、第２電極のスティッチボンディングした部分に重ねてボールボンディングを行うと共に、キャピラリ先端部のフェイス面の半径を、半導体素子の上面外周辺から第２電極のボールボンディング跡の中心までの最短距離よりも長くするとともに、フェイス面に１５°以下の傾斜をもたせ、第２電極のボールボンディング跡に形成される突起を、前記フェイス面で押しつぶすので、ワイヤを第２電極に強力に固着できると同時に半導体装置の薄型化が図れる。
【００２３】
また、新たな設備や工程を導入することなく、キャピラリの移動制御を変更するだけで突起をなくすことができるので、経済的で生産性の低下も抑えられる。
【図面の簡単な説明】
【図１】 本発明のワイヤボンディング方法の一例を示す工程図の一部である。
【図２】 図１のワイヤボンディング方法を示す工程図の続きである。
【図３】 上面に複数の電極が形成された半導体素子におけるワイヤボンディング方法の一例を示す概説図である。
【図４】 上面に複数の電極が形成された他の半導体素子におけるワイヤボンディング方法の一例を示す概説図である。
【図５】 従来のワイヤボンディング方法の一例を示す断面図である。
【図６】 従来のワイヤボンディング方法の他の例を示す断面図である。
【図７】 従来のキャピラリのフェイス面の大きさと、半導体素子の幅との関係を示す概説図である。
【図８】 本発明における「最短距離」を示す説明図である。
【符号の説明】
１ 回路基板
２ 第１電極
３，３’，３” 半導体素子
４ ワイヤ
５ キャピラリ
６ 突起
ｂ 金属ボール
Ｂ1，Ｂ2 ボールボンディング部
Ｓ スティッチボンディング部
３１ 上面電極（第２電極）
５１ フェイス面[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bonding method for connecting electrodes with wires, and more particularly, to a wire bonding method for reinforcing adhesion between a wire and an electrode by performing ball bonding on a stitch bonded portion.
[0002]
[Prior art]
In recent years, various attempts have been made to reduce the thickness of semiconductor devices including semiconductor light emitting devices. As one of the methods, when the semiconductor element 3 as shown in FIG. 5 is mounted on the circuit board 1, the wire 4 is ball-bonded to the electrode 2 formed on the circuit board 1, and then the upper surface of the semiconductor element 3. A wire bonding method for stitch bonding to the electrode 31 has been proposed (see, for example, Patent Document 1). According to this proposed wire bonding method, the rising portion of the wire 4 generated in the ball bonding portion B is just offset by the height of the semiconductor element 3, so that the wire is applied to the upper surface electrode 31 of the semiconductor element 3. After the first bonding of 4, the semiconductor device can be made thinner than the conventional method in which the second bonding is performed on the electrode 2 of the circuit board 1.
[0003]
On the other hand, although this wire bonding method has no directivity in bonding and excellent workability, the stitch bonding portion S has a smaller crimping area than the ball bonding portion B and the thickness of the crimping portion is thin, so that the bonding strength There was an essential problem that was weak. According to the experience of the present inventor, the reason has not been clarified yet, but when the wire is stitch bonded to the upper surface electrode of the semiconductor element, there is a problem that the wire is particularly easily cut.
[0004]
Therefore, for the purpose of increasing the fixing strength of the stitch bonding portion S, it has been proposed to perform ball bonding overlapping the stitch bonding portion S (for example, Reference 2).
[0005]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 2001-15542 (claim column, FIG. 2)
[Patent Document 2]
Japanese Patent Application Laid-Open No. 11-163026 (column of claims, FIG. 2)
[0006]
[Problems to be solved by the invention]
When this method is applied to the wire bonding method shown in FIG. 5, the fixing strength of the wire is surely increased. However, as shown in FIG. 6, a rising portion (projection) 6 of the wire is unavoidable at the ball bonding portion B 2. Therefore, the object of thinning the semiconductor device could not be sufficiently achieved.
[0007]
The present invention has been made in view of such a conventional problem, and an object of the present invention is to strongly fix a wire and an electrode, particularly, a wire and an upper electrode of a semiconductor element, and a semiconductor device. An object of the present invention is to provide a wire bonding method capable of reducing the thickness of the wire.
[0008]
It is another object of the present invention to provide a wire bonding method capable of firmly fixing a wire and an electrode without requiring new equipment and reducing the productivity of the apparatus.
[0009]
[Means for Solving the Problems]
According to the present invention, after the wire is ball-bonded to the first electrode using the capillary, the capillary is placed on the upper surface of the semiconductor element and higher than the first electrode while the wire is drawn out from the capillary. In a wire bonding method in which a wire is bonded to the second electrode after the wire is stitch-bonded to the second electrode and then bonded to the stitch-bonded portion of the second electrode. The radius is made longer than the shortest distance from the outer periphery of the upper surface of the semiconductor element to the center of the ball bonding trace of the second electrode , and the face surface has an inclination of 15 ° or less so that the ball bonding trace of the second electrode is formed. The protrusion formed on the face is crushed by the face surface. Ya bonding method is provided.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
In order to increase the fixing strength of the stitch-bonded portion, the inventor performs ball bonding on the stitch-bonded portion in the same manner as in the prior art, and the ball bonding is performed on the second electrode on the premise of this. The problem, that is, whether or not the protrusion formed on the ball bonding trace of the second electrode could be removed was examined. If the protrusions are simply removed, for example, the protrusions can be crushed with a holding jig after the wire bonding process, or the protrusions can be cut with a cutting jig, but new equipment is required to crush or cut the protrusions. In addition, the productivity of the apparatus is reduced. Therefore, as a result of further examination as to whether or not the protrusions can be removed with existing equipment, attention was paid to the capillaries used in the wire bonding process, and it was found that the protrusions could be crushed using the capillaries, and the present invention was made. It was.
[0011]
That is, one of the major features of the wire bonding method of the present invention is that the protrusions are crushed by the face surface of the capillary tip. According to such a configuration, the protrusion can be eliminated simply by changing the movement control of the capillary without introducing new equipment, and a reduction in productivity can be suppressed.
[0012]
Another major feature of the present invention is that the radius of the face of the capillary is made longer than the shortest distance from the outer periphery of the upper surface of the semiconductor element to the center of the ball bonding trace of the second electrode. As shown in FIG. 7, since the face surface 51 ′ of the conventional capillary 5 ′ is smaller than the width of the semiconductor element 3, when the protrusion 6 is crushed by the face surface 51 ′, the next wire bonding is performed. The prepared metal ball b at the tip of the capillary may come into contact with the semiconductor element 3. Therefore, in the present invention, when the radius of the face surface of the capillary is made longer than the shortest distance from the outer periphery of the upper surface of the semiconductor element to the center of the ball bonding trace of the second electrode, The metal ball formed at the tip was not in contact with the semiconductor element. The shortest distance from the outer periphery of the upper surface of the semiconductor element to the center of the ball bonding trace of the second electrode is lowered from the center O of the ball bonding trace to the outer periphery immediately adjacent to the semiconductor element 3, as shown in FIG. The length of the vertical line.
[0013]
The capillary used in the present invention has the radius of the face surface, and at the same time , the face surface needs to have an inclination of 15 ° or less from the viewpoint of firmly fixing the wire to the electrode in stitch bonding. This is because if the inclination angle of the face surface is larger than 15 °, the pressing force is not sufficiently applied to the wire through the face surface, and the wire may be insufficiently adhered to the electrode. The tilt angle of the face surface means an angle formed by a plane perpendicular to the axial direction at the capillary tip and the face surface.
[0014]
An example of the wire bonding method of the present invention is shown in FIG. In this embodiment, the wire bonding method in the case of a chip type semiconductor device is described. However, the wire bonding method of the present invention is not limited to the chip type semiconductor device, and a wire bonding method of a conventionally known semiconductor element is used. Can be used.
[0015]
First, a metal ball b is formed at the tip of the wire 4 exposed from the opening at the tip of the capillary 5 by discharge from a torch electrode (not shown) (FIG. 1A). Then, the capillary 5 is lowered and the metal ball b at the tip of the wire is pressed against the electrode (first electrode) 2 formed on the substrate 1 to fix the metal ball b to the electrode 2 while applying ultrasonic vibration ( Ball bonding, FIG. Next, after the capillary 5 is moved up to a position slightly higher than the height of the semiconductor element 3, it is moved above the semiconductor element 3 fixed to the electrode 2 'on the substrate 1 ((c) in the figure). The capillary 5 is lowered and pressed against the upper surface electrode (second electrode) 31, and a predetermined load is applied. At the same time, ultrasonic vibration is applied to fix the wire 4 to the upper surface electrode 31 (stitch bonding, FIG. 4D). . Thereafter, with the wire 4 clamped, the capillary 5 is moved upward to cut the wire 4 ((e) in the figure).
[0016]
Next, once again, a metal ball b is formed at the tip of the wire 4 by discharging from a torch electrode (not shown) (FIG. 2 (f)). Then, the capillary 5 is lowered and the metal ball b at the tip of the wire is pressed against the stitch bonding part S of the upper surface electrode 31 of the semiconductor element 3 to fix the metal ball b to the stitch bonding part S while applying ultrasonic vibration ( (G)). Thereby, the adhesion between the wire 4 and the upper surface electrode 31 is remarkably increased. Next, with the wire 4 clamped, the capillary 5 is moved upward to cut the wire 4. At this time, the ball bonding portion B 2 in the rising portion of the wire 4 of the upper electrode 31 (protrusion) 6 remains (FIG. (H)).
[0017]
After forming a metal ball b for the next wire bonding at the tip of the wire 4, the capillary 5 is positioned so that the face surface 51 of the capillary 5 is positioned vertically above the protrusion 6 and the metal ball b does not contact the semiconductor element 3. Is moved in the horizontal direction ((i) in the figure). Next, the capillary 5 is moved downward, and the projection 6 is crushed by the face surface 51 of the capillary 5 ((j) in the figure). As a result, the protrusion 6 that has been an obstacle to the thinning of the conventional device can be eliminated, and the thinning of the device can be achieved. At the same time, the wire 4 and the upper surface electrode 31 can be more firmly fixed. Then, the capillary 5 is moved to wire-bond between the next electrodes ((k) in the figure).
[0018]
The movement control of the capillary 5 when crushing the protrusion 6 is performed by, for example, storing the planar position and height of the capillary 5 when ball bonding is performed on the upper surface electrode 31, and the metal ball b is determined based on the planar position information. The capillary 5 is moved in the horizontal direction to such an extent that it does not come into contact with the semiconductor element 3, and the moving distance downward of the capillary 5 is controlled based on the height information. According to such movement control, even if the position and height of the upper surface electrode 31 vary, the protrusion 6 can be reliably crushed by the face surface 51. Of course, the movement of the capillary may be controlled by capturing the position of the capillary or the upper electrode as an image with a camera and performing data processing.
[0019]
When there are a plurality of electrodes to be wire-bonded in one semiconductor element, the crushing of the protrusions 6 of the ball bonding portion B 2 by the capillary 5 may be performed after wire bonding between all the electrodes, or between one electrode. It may be performed sequentially after wire bonding. The latter is desirable from the viewpoint of shortening the moving distance of the capillary 5 and increasing the production efficiency.
[0020]
Next, the case where the wire bonding method of the present invention is used for a semiconductor element such as an IC in which a plurality of upper surface electrodes are formed will be described. In the semiconductor device of FIG. 3, as shown in FIG. 3A, a plurality of second electrodes 31 are disposed along the outer periphery of the upper surface of the semiconductor element 3 ′ so as to surround the periphery of the semiconductor element 3 ′. A first electrode (lead) 2 corresponding to the second electrode 31 is disposed. The corresponding first electrode 2 and second electrode 31 are connected by a wire 4. As described above, in the wire bonding, the wire 4 is first ball-bonded to the first electrode 2 using a capillary, and then stitch-bonded to the second electrode 31, and then the wire is ball-bonded on the stitch-bonded portion. The protrusion 6 formed on the second electrode 31 is crushed by the face surface 51 of the capillary 5, but at this time, the metal ball b formed at the tip of the capillary is not in contact with the semiconductor element 3 ′ and the bonded wire 4. Therefore, as shown in FIG. 3B, the plane position of the center of the axis of the capillary 5 is preferably on the electrode side to be bonded next when viewed from the bonded wire 4 outside the side end of the semiconductor element 3 ′. .
[0021]
When the semiconductor element 3 ″ has a rectangular recess 32 formed at the center of the upper surface as shown in FIG. 4A, when the protrusion 6 is crushed by the face surface 51 of the capillary 5, ), The capillary 5 is preferably moved inward of the semiconductor element 3 ″ so that the metal ball b formed at the tip of the capillary 5 enters the recess 32. By controlling the movement of the capillary 5 in this way, the metal ball b does not come into contact with the semiconductor element 3 ″ and the bonded wire, and the diameter of the face face of the capillary can be made as small as possible.
[0022]
【The invention's effect】
In the wire bonding method of the present invention, ball bonding is performed by superimposing on the stitch-bonded portion of the second electrode, and the radius of the face surface of the capillary tip is set from the outer periphery of the upper surface of the semiconductor element to the ball bonding trace of the second electrode. It is longer than the shortest distance to the center , and the face surface has an inclination of 15 ° or less, and the protrusion formed on the ball bonding trace of the second electrode is crushed by the face surface, so that the wire is strong against the second electrode. At the same time, the semiconductor device can be thinned.
[0023]
In addition, since the protrusion can be eliminated simply by changing the movement control of the capillary without introducing new equipment or processes, it is economical and a decrease in productivity can be suppressed.
[Brief description of the drawings]
FIG. 1 is a part of a process chart showing an example of a wire bonding method of the present invention.
FIG. 2 is a continuation of the process diagram showing the wire bonding method of FIG. 1;
FIG. 3 is a schematic diagram showing an example of a wire bonding method in a semiconductor element having a plurality of electrodes formed on an upper surface.
FIG. 4 is a schematic view showing an example of a wire bonding method in another semiconductor element having a plurality of electrodes formed on the upper surface.
FIG. 5 is a cross-sectional view showing an example of a conventional wire bonding method.
FIG. 6 is a cross-sectional view showing another example of a conventional wire bonding method.
FIG. 7 is a schematic diagram showing the relationship between the size of the face surface of a conventional capillary and the width of a semiconductor element.
FIG. 8 is an explanatory diagram showing a “shortest distance” in the present invention.
[Explanation of symbols]
1 circuit board 2 first electrode 3, 3 ', 3 "semiconductor element 4 wire 5 capillary 6 projections b metal ball B 1, B 2 ball bonding portion S stitch bonding portion 31 upper electrode (second electrode)
51 Face side

Claims (1)

キャピラリを用いてワイヤを第１電極にボールボンディングした後、前記キャピラリからワイヤを繰り出しながら前記キャピラリを、半導体素子の上面に形成された、前記第１電極よりも高い位置にある第２電極上に移動させ、この第２電極にワイヤをスティッチボンディングした後、第２電極の前記スティッチボンディングした部分に重ねてボールボンディングを行うワイヤボンディング方法において、
前記キャピラリ先端部のフェイス面の半径を、前記半導体素子の上面外周辺から前記第２電極のボールボンディング跡の中心までの最短距離よりも長くするとともに、フェイス面に１５°以下の傾斜をもたせ、前記第２電極のボールボンディング跡に形成される突起を、前記フェイス面で押しつぶすことを特徴とするワイヤボンディング方法。After the wire is ball-bonded to the first electrode using the capillary, the capillary is placed on the second electrode, which is formed on the upper surface of the semiconductor element and is higher than the first electrode, while feeding the wire from the capillary. In a wire bonding method of moving and stitching a wire to the second electrode and then performing ball bonding on the stitched portion of the second electrode,
The radius of the face surface of the capillary tip is made longer than the shortest distance from the outer periphery of the upper surface of the semiconductor element to the center of the ball bonding trace of the second electrode , and the face surface is inclined by 15 ° or less , A wire bonding method, wherein a protrusion formed on a ball bonding mark of the second electrode is crushed by the face surface.
JP2002272617A 2002-09-19 2002-09-19 Wire bonding method Expired - Fee Related JP3753685B2 (en)

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US20220199571A1 (en) * 2020-12-23 2022-06-23 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding

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JP2009283965A (en) * 2009-07-23 2009-12-03 Suzuka Fuji Xerox Co Ltd Semiconductor device and wire bonding method
JP6227223B2 (en) * 2012-03-30 2017-11-08 富士通テン株式会社 Semiconductor device and manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220199571A1 (en) * 2020-12-23 2022-06-23 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding
US12142595B2 (en) * 2020-12-23 2024-11-12 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding

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