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JP3629305B2 - Magnetron sputter cathode - Google Patents

Magnetron sputter cathode Download PDF

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Publication number
JP3629305B2
JP3629305B2 JP19176295A JP19176295A JP3629305B2 JP 3629305 B2 JP3629305 B2 JP 3629305B2 JP 19176295 A JP19176295 A JP 19176295A JP 19176295 A JP19176295 A JP 19176295A JP 3629305 B2 JP3629305 B2 JP 3629305B2
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Japan
Prior art keywords
annular magnet
target
magnet
magnetic field
inner annular
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JP19176295A
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JPH0941135A (en
Inventor
誠一 高橋
水沢　　寧
智保 近藤
浩治 永谷
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Ulvac Inc
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Ulvac Inc
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Description

【０００１】
【発明の属する技術分野】
この発明は、低圧力の下でも放電を起こすことができるマグネトロンスパッタカソードに関するものである。
【０００２】
【従来の技術】
従来のマグネトロンスパッタカソードを図５、図６および図７に示す。図 ５、図６において、ターゲット１はターゲット電極２の表面に取り付けられ、また、ターゲット電極２の背後には磁石装置３が配設されている。磁石装置３は、円板の形をしたマグネットプレート４と、このマグネットプレート４上に配置された円形の内側環状磁石５と、この内側環状磁石５の廻りを内側環状磁石５と一定の間隔をおいてリング状に囲むように、マグネットプレート４上に配置された円形の外側環状磁石６とで構成されている。そして、内側環状磁石５のターゲット電極２に隣接した先端と外側環状磁石６のターゲット電極２に隣接した先端とは互いに極性が異なっている。図７は棒磁石７をリング状に並べたものであり、棒磁石の両開放端がＮ極、Ｓ極となっている
【０００３】
なお、図５および図６において、８は磁石装置３を回転または走査させるための機構である。９はターゲット電極２に負バイアス電圧を印加する直流電源、 １０は放電ガス導入口１１と真空排気口１２とが設けられた真空槽、１３は真空槽１０内にターゲット１と対向して配設された基板、１４はヒーター１５が設けられた基板ホルダーである。
【０００４】
このようなマグネトロンスパッタカソードにおいては、たとえば、内側環状磁石５のターゲット電極２に隣接した先端をＮ極とし、外側環状磁石６のターゲット電極２に隣接した先端をＳ極とすれば、磁石装置３の内側環状磁石５のターゲット電極２に隣接した先端から流出した磁力線が、ターゲット１の表面近傍の空間において湾曲してから磁石装置３の外側環状磁石６のターゲット電極２に隣接した先端に流入し、ターゲット１の表面近傍の空間に湾曲した磁場が形成されるようになる。そして、真空槽１０内を排気しながら放電ガスを導入して真空槽１０内の圧力を１０−１Ｐａ台に保ち、直流電源９よりターゲット電極２に負のバイアス電圧を印加すると、ターゲット１の表面近傍の空間で湾曲した磁場が形成された領域に放電が起き、ターゲット１はこの放電に曝されたところが放電中のイオンでスパッタされるようになる。
【０００５】
【発明が解決しようとする課題】
従来のマグネトロンスパッタカソードは、上記のように内側環状磁石５と外側環状磁石６との間隔を一定にしているか、または棒磁石を並べたものから構成されているため、ターゲット１の表面近傍の空間に形成される湾曲した磁場の強度は一定になる。そのため、真空槽１０内の圧力を１×１０−１Ｐａ以下の低圧力にすると、ある圧力領域において放電を起こすのに必要な磁場の強度が不足し、電源９よりターゲット電極２に負のバイアス電圧を印加しても放電を起こすことができない問題が起きた。我々の検討によれば放電開始圧力と磁場強度の関係は図４に示すごとくであり、図４の放電領域中にない条件では放電されないことが判明した。なお、図４における両方向矢印で示す境界領域では、放電する場合もあり、しない場合もある。
【０００６】
磁力強度の強い磁石を使用するか、または内側環状磁石５もしくは外側環状状磁石６の径を変えることにより、内側環状磁石５と外側環状磁石６との間隔を全体的に狭め、ターゲット１の表面近傍の空間に形成される湾曲した磁場の強度を全体的に強くすると、真空槽１０内の圧力を１×１０−１Ｐａ以下の低圧力にしても放電を起こすことが可能になるが、前者においては、入手可能な高磁力磁石はおのずと限界があり、後者の方法においてはターゲット１の表面近傍の空間で湾曲した磁場が形成される領域が狭くなるため、ターゲット１の表面近傍の空間で起きる放電の領域が狭くなってしまう。そのため、ターゲット１は放電に曝されるところが狭くなり、換言すれば、エローション領域が狭くなり、ターゲット１の使用効率が非常に悪くなるという問題が新たに発生する。
【０００７】
この発明の目的は、従来の上記問題を解決して、低圧力の下でも放電を起こすことができると共に、ターゲットの使用効率がよいマグネトロンスパッタカソードを提供することにある。
【０００８】
上記目的を達成するために、この発明は、 内側環状磁石の廻りをこの内側環状磁石と間隔をおいて外側環状磁石でリング状に囲んでいる磁石装置をターゲットの背後に配設し、この磁石装置によってターゲットの表面近傍の空間に湾曲した磁場を形成するマグネトロンスパッタカソードにおいて、
上記磁石装置の内側環状磁石と外側環状磁石との間隔に広狭をつけ、上記ターゲットの表面近傍の空間に形成される湾曲した磁場の水平磁場強度に強弱をつけ、上記湾曲した磁場の水平磁場強度の最も強い磁場強度が、そのスパッタ圧力下で、放電を発生させるのに十分な強度をもち、最も弱い磁場強度が、そのスパッタ圧力下で、放電を発生させない程度の強度となるように構成したことを特徴とするものである。
また、ターゲットの背後に配設される内側環状磁石は円形であり、かつターゲットの中心軸より中心軸をずらして配置され、そして内側環状磁石の廻りに内側環状磁石と間隔をおいて配設される外側環状磁石は円形であり、円形の外側環状磁石と円形の内側環状磁石との間隔はターゲットの中心軸側におけるよりターゲットの外周側において広くなるように構成され得る。代わりに、円形の外側環状磁石と円形の内側環状磁石との間隔はターゲットの中心軸側におけるよりターゲットの外周側において狭くなるように構成され得る。
【０００９】
【作用】
この発明においては、磁石装置の内側環状磁石と外側環状磁石との間隔に広狭をつけ、ターゲットの表面近傍の空間に形成される湾曲した磁場の強度に強弱をつけているので、磁石装置の内側環状磁石と外側環状磁石との間隔を狭め、ターゲットの表面近傍の空間に形成される湾曲した磁場の強度を強めたところでは、低圧力の下でも放電が起きるようになる。そして、この放電が種放電となって磁場に沿って広がってゆき、内側環状磁石と外側環状磁石との間隔を広げ、ターゲットの表面近傍の空間に形成される湾曲した磁場の強度を弱めたところでも放電が起きるようになる。
【００１０】
また、ターゲットの表面近傍の空間で湾曲した磁場が形成される領域も広くなるため、ターゲットの表面近傍の空間で起きる放電領域が広がり、ターゲット使用効率がよくなる。
【００１１】
【発明の実施の形態】
以下、この発明の実施の形態を図示実施例に基づいて説明する。
【実施例】
この発明の第１実施例のマグネトロンスパッタカソードは従来のものを改良したもので図１および図２に示されている。これらの図において、ターゲット２１はターゲット電極２２の表面に取り付けられ、また、ターゲット電極２２の背後には磁石装置２３が配設されている。磁石装置２３は、円板の形をしたマグネットプレート２４と、このマグネットプレート２４の中心軸より中心軸をずらしてマグネットプレート２４上に配置された円形の内側環状磁石２５と、この内側環状磁石２５の廻りを、マグネットプレート２４の円周側においては内側環状磁石２５と狭い間隔をおき、マグネットプレート２４の外周側においては内側環状磁石２５と広い間隔をおいてリング状に囲むように、マグネットプレート２４上に配置された円形の外側環状磁石 ２６とで構成されている。そして、内側環状磁石２５のターゲット電極２２に隣接した先端はＮ極となり、また、外側環状磁石２６のターゲット電極２２に隣接した先端はＳ極となっている。
【００１２】
次に、図３に示すこの発明の第２実施例について説明する。同図において、外側環状磁石２６は、内側環状磁石２５の廻りを、マグネットプレート２４の内周側においては内側環状磁石２５と広い間隔をおき、マグネットプレート２４の外周側においては内側環状磁石２５と狭い間隔をおいてリング状に囲むように、マグネットプレート２４上に配置されている。
【００１３】
このような第１実施例および第２実施例においては、磁石装置２３の内側環状磁石２５と外側環状磁石２６との間隔に広狭をつけ、ターゲット２１の表面近傍の空間に形成される湾曲した磁場の強度に強弱をつけているので、磁石装置２３の内側環状磁石２５と外側環状磁石２６との間隔を狭め、ターゲット２１の表面近傍の空間に形成される湾曲した磁場の強度を強めたところでは、低圧力の下でも放電が起きるようになる。そして、この放電が種放電となって磁場に沿って広がってゆき、内側環状磁石２５と外側環状磁石２６との間隔を広げ、ターゲット２１の表面近傍の空間に形成される湾曲した磁場の強度を弱めたところでも放電が起きるようになる。
【００１４】
また、ターゲット２１の表面近傍の空間で湾曲した磁場が形成される領域が広くなるため、ターゲット２１の表面近傍の空間で起きる放電の領域が広くなる。そのため、ターゲット２１は放電に曝されるところが広くなり、ターゲット２１の使用効率がよくなる。
【００１５】
例えば、内側環状磁石２５と外側環状磁石２６との間隔を狭め、ターゲット２１の表面近傍の空間に形成される湾曲した磁場の強度を強めたところの水平磁場の強度を５３ｍＴ（ミリテスラ）、内側環状磁石２５と外側環状磁石２６との間隔を広げ、ターゲット２１の表面近傍の空間に形成される湾曲した磁場の強度を弱めたところの水平磁場の強度を３５ｍＴとすると、真空槽内の圧力を５×１０−２Ｐａの低圧力にしても放電を起こすことができた。これは、図４に示すターゲット２１の表面近傍の空間に形成される湾曲した磁場の水平磁場の強度と、放電を起こすことができる真空槽内の圧力との関係を満たさず、磁石配置に広狭をつけることにより、低圧力でより放電が容易になったことを示している。
【００１６】
ところで、上記実施例では、磁石装置２３の内側環状磁石２５および外側環状磁石２６の形状を円形としているが、この形状は円形以外であってもよい。
【００１７】
【発明の効果】
この発明は、上記のように、磁石装置の内側環状磁石と外側環状磁石との間隔に広狭をつけ、ターゲットの表面近傍の空間に形成される湾曲した磁場の強度に強弱をつけているので、磁石装置の内側環状磁石と外側環状磁石との間隔を狭め、ターゲットの表面近傍の空間に形成される湾曲した磁場の強度を強めたところでは、低圧力の下でも放電が起きるようになる。そして、この放電が種放電となって磁場に沿って広がってゆき、内側環状磁石と外側環状磁石との間隔を広げ、ターゲットの表面近傍の空間に形成される湾曲した磁場の強度を弱めたところでも放電が起きるようになる。
【００１８】
また、ターゲットの表面近傍の空間で湾曲した磁場が形成される領域が広くなるため、ターゲットの表面近傍の空間で起きる放電の領域が広くなる。そのため、ターゲットは放電に曝されるところが広くなり、ターゲットの使用効率がよくなる。
【図面の簡単な説明】
【図１】この発明の第１実施例の断面図。
【図２】図１のＡ−Ａ線より見た矢視図。
【図３】この発明の第２実施例の要部を示す説明図。
【図４】ターゲットの表面近傍の空間に形成される湾曲した磁場の水平磁場の強度と、放電を起こすことができる真空槽内の圧力との関係を示すグラフ。
【図５】従来のマグネトロンスパッタカソードの断面図。
【図６】図４のＢ−Ｂ線より見た矢視図。
【図７】従来のマグネトロンスパッタカソードの別の例の要部の概略図。
【符号の説明】
２１・・・・ターゲット
２２・・・・ターゲット電極
２３・・・・磁石装置
２４・・・・マグネットプレート
２５・・・・内側環状磁石
２６・・・・外側環状磁石[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a magnetron sputter cathode capable of causing discharge even under a low pressure.
[0002]
[Prior art]
A conventional magnetron sputter cathode is shown in FIGS. 5 and 6, the target 1 is attached to the surface of the target electrode 2, and the magnet device 3 is disposed behind the target electrode 2. The magnet device 3 includes a disc-shaped magnet plate 4, a circular inner annular magnet 5 disposed on the magnet plate 4, and the inner annular magnet 5 around the inner annular magnet 5 at a constant interval. And a circular outer annular magnet 6 disposed on the magnet plate 4 so as to surround the ring. The tip of the inner annular magnet 5 adjacent to the target electrode 2 and the tip of the outer annular magnet 6 adjacent to the target electrode 2 have different polarities. FIG. 7 shows the bar magnets 7 arranged in a ring shape, and both open ends of the bar magnets are N-pole and S-pole.
5 and 6, reference numeral 8 denotes a mechanism for rotating or scanning the magnet device 3. 9 is a DC power source for applying a negative bias voltage to the target electrode 2, 10 is a vacuum chamber provided with a discharge gas introduction port 11 and a vacuum exhaust port 12, and 13 is disposed in the vacuum chamber 10 so as to face the target 1. Reference numeral 14 denotes a substrate holder provided with a heater 15.
[0004]
In such a magnetron sputtering cathode, for example, if the tip of the inner annular magnet 5 adjacent to the target electrode 2 is an N pole and the tip of the outer annular magnet 6 adjacent to the target electrode 2 is an S pole, the magnet device 3 Magnetic field lines flowing out from the tip of the inner annular magnet 5 adjacent to the target electrode 2 are curved in the space near the surface of the target 1 and then flow into the tip of the outer annular magnet 6 of the magnet device 3 adjacent to the target electrode 2. A curved magnetic field is formed in the space near the surface of the target 1. Then, the discharge gas is introduced while the vacuum chamber 10 is evacuated, the pressure in the vacuum chamber 10 is maintained at a level of 10 −1 Pa, and a negative bias voltage is applied to the target electrode 2 from the DC power source 9. A discharge occurs in a region where a curved magnetic field is formed in a space near the surface, and the target 1 is exposed to this discharge and sputtered by ions during discharge.
[0005]
[Problems to be solved by the invention]
Since the conventional magnetron sputter cathode has a constant interval between the inner annular magnet 5 and the outer annular magnet 6 as described above, or is formed by arranging bar magnets, a space near the surface of the target 1 is used. The intensity of the curved magnetic field formed in the is constant. Therefore, when the pressure in the vacuum chamber 10 is set to a low pressure of 1 × 10 −1 Pa or less, the strength of the magnetic field necessary for causing discharge in a certain pressure region is insufficient, and a negative bias voltage is applied to the target electrode 2 from the power source 9. There was a problem that the discharge could not occur even when applied. According to our study, the relationship between the discharge start pressure and the magnetic field strength is as shown in FIG. 4, and it has been found that no discharge occurs under conditions that are not in the discharge region of FIG. In the boundary region indicated by the double-pointed arrow in FIG.
[0006]
By using a magnet having a strong magnetic strength, or by changing the diameter of the inner annular magnet 5 or the outer annular magnet 6, the distance between the inner annular magnet 5 and the outer annular magnet 6 is entirely reduced, and the surface of the target 1. When the strength of the curved magnetic field formed in the nearby space is increased as a whole, discharge can be caused even if the pressure in the vacuum chamber 10 is a low pressure of 1 × 10 −1 Pa or less. However, in the latter method, a region where a curved magnetic field is formed in the space near the surface of the target 1 is narrowed, so that the magnetic field occurs in the space near the surface of the target 1. The discharge area becomes narrow. For this reason, the target 1 is exposed to a narrower area, in other words, the erosion region is narrowed, and a new problem arises that the use efficiency of the target 1 becomes very poor.
[0007]
An object of the present invention is to provide a magnetron sputter cathode that solves the above-described conventional problems and that can cause discharge even under a low pressure and has high target use efficiency.
[0008]
In order to achieve the above object, according to the present invention, a magnet device is provided behind the target, the magnet device surrounding the inner annular magnet in a ring shape with the outer annular magnet spaced apart from the inner annular magnet. In a magnetron sputter cathode that forms a curved magnetic field in the space near the surface of the target by the device,
The gap between the inner ring magnet and the outer ring magnet of the magnet device is widened, the horizontal magnetic field strength of the curved magnetic field formed in the space near the surface of the target is increased or decreased, and the horizontal magnetic field strength of the curved magnetic field is increased. The strongest magnetic field strength is strong enough to generate a discharge under the sputtering pressure, and the weakest magnetic field strength is strong enough not to generate a discharge under the sputtering pressure. It is characterized by this.
Further, the inner annular magnet disposed behind the target is circular and is disposed with the center axis shifted from the center axis of the target, and is disposed around the inner annular magnet with a space from the inner annular magnet. The outer annular magnet may be circular, and the distance between the circular outer annular magnet and the circular inner annular magnet may be wider on the outer peripheral side of the target than on the central axis side of the target. Alternatively, the distance between the circular outer annular magnet and the circular inner annular magnet can be configured to be narrower on the outer peripheral side of the target than on the central axis side of the target.
[0009]
[Action]
In the present invention, the interval between the inner annular magnet and the outer annular magnet of the magnet device is widened and the strength of the curved magnetic field formed in the space near the surface of the target is increased or decreased. When the space between the annular magnet and the outer annular magnet is narrowed and the strength of the curved magnetic field formed in the space near the surface of the target is increased, discharge occurs even under a low pressure. This discharge becomes seed discharge and spreads along the magnetic field, widens the distance between the inner annular magnet and the outer annular magnet, and weakens the strength of the curved magnetic field formed in the space near the surface of the target. Discharge will occur.
[0010]
In addition, since a region where a curved magnetic field is formed in the space near the surface of the target is widened, a discharge region occurring in the space near the surface of the target is widened, and the target usage efficiency is improved.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below based on the illustrated examples.
【Example】
The magnetron sputter cathode according to the first embodiment of the present invention is an improvement over the conventional one and is shown in FIGS. In these drawings, the target 21 is attached to the surface of the target electrode 22, and a magnet device 23 is disposed behind the target electrode 22. The magnet device 23 includes a disc-shaped magnet plate 24, a circular inner annular magnet 25 arranged on the magnet plate 24 with the central axis shifted from the central axis of the magnet plate 24, and the inner annular magnet 25. The magnet plate 24 is surrounded by a ring at a narrow interval with the inner annular magnet 25 on the circumferential side of the magnet plate 24 and at a large interval with the inner annular magnet 25 on the outer peripheral side of the magnet plate 24. 24 and a circular outer annular magnet 26 arranged on 24. The tip of the inner annular magnet 25 adjacent to the target electrode 22 is an N pole, and the tip of the outer annular magnet 26 adjacent to the target electrode 22 is an S pole.
[0012]
Next, a second embodiment of the present invention shown in FIG. 3 will be described. In the drawing, the outer annular magnet 26 is spaced apart from the inner annular magnet 25 on the inner peripheral side of the magnet plate 24, and is spaced apart from the inner annular magnet 25 on the outer peripheral side of the magnet plate 24. It arrange | positions on the magnet plate 24 so that it may surround in a ring shape with a narrow space | interval.
[0013]
In the first embodiment and the second embodiment as described above, a curved magnetic field is formed in a space near the surface of the target 21 by making the gap between the inner annular magnet 25 and the outer annular magnet 26 of the magnet device 23 wider and narrower. Since the strength between the inner annular magnet 25 and the outer annular magnet 26 of the magnet device 23 is reduced, the strength of the curved magnetic field formed in the space near the surface of the target 21 is increased. Discharge occurs even under low pressure. This discharge becomes a seed discharge and spreads along the magnetic field, widens the distance between the inner annular magnet 25 and the outer annular magnet 26, and increases the strength of the curved magnetic field formed in the space near the surface of the target 21. Discharge occurs even when weakened.
[0014]
In addition, since the region where the curved magnetic field is formed in the space near the surface of the target 21 is widened, the region of the discharge that occurs in the space near the surface of the target 21 is widened. Therefore, the place where the target 21 is exposed to the electric discharge becomes wider, and the usage efficiency of the target 21 is improved.
[0015]
For example, the distance between the inner annular magnet 25 and the outer annular magnet 26 is narrowed, and the strength of the curved magnetic field formed in the space near the surface of the target 21 is increased, and the horizontal magnetic field strength is 53 mT (millitesla). When the distance between the magnet 25 and the outer annular magnet 26 is widened and the strength of the curved magnetic field formed in the space near the surface of the target 21 is weakened, the strength of the horizontal magnetic field is 35 mT, and the pressure in the vacuum chamber is 5 Even at a low pressure of × 10 −2 Pa, discharge could be caused. This does not satisfy the relationship between the strength of the horizontal magnetic field of the curved magnetic field formed in the space near the surface of the target 21 shown in FIG. 4 and the pressure in the vacuum chamber capable of causing discharge, and the magnet arrangement is wide and narrow. This indicates that the discharge becomes easier at a low pressure.
[0016]
By the way, in the said Example, although the shape of the inner side annular magnet 25 and the outer side annular magnet 26 of the magnet apparatus 23 is made circular, this shape may be other than a circle.
[0017]
【The invention's effect】
As described above, the present invention makes the interval between the inner annular magnet and the outer annular magnet of the magnet device wider and narrower, and gives strength to the strength of the curved magnetic field formed in the space near the surface of the target. When the distance between the inner annular magnet and the outer annular magnet of the magnet device is reduced and the strength of the curved magnetic field formed in the space near the surface of the target is increased, electric discharge occurs even under a low pressure. This discharge becomes seed discharge and spreads along the magnetic field, widens the distance between the inner annular magnet and the outer annular magnet, and weakens the strength of the curved magnetic field formed in the space near the surface of the target. Discharge will occur.
[0018]
In addition, since the region where the curved magnetic field is formed in the space near the surface of the target is widened, the region of the discharge occurring in the space near the surface of the target is widened. Therefore, the place where the target is exposed to discharge becomes wider, and the use efficiency of the target is improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a first embodiment of the present invention.
FIG. 2 is an arrow view taken along line AA in FIG.
FIG. 3 is an explanatory view showing a main part of a second embodiment of the present invention.
FIG. 4 is a graph showing the relationship between the strength of a horizontal magnetic field of a curved magnetic field formed in a space near the surface of a target and the pressure in a vacuum chamber capable of causing discharge.
FIG. 5 is a cross-sectional view of a conventional magnetron sputtering cathode.
6 is an arrow view taken along line BB in FIG. 4;
FIG. 7 is a schematic view of the main part of another example of a conventional magnetron sputter cathode.
[Explanation of symbols]
21 ... Target 22 ... Target electrode 23 ... Magnet device 24 ... Magnet plate 25 ... Inner ring magnet 26 ... Outer ring magnet

Claims (3)

内側環状磁石の廻りをこの内側環状磁石と間隔をおいて外側環状磁石でリング状に囲んでいる磁石装置をターゲットの背後に配設し、この磁石装置によってターゲットの表面近傍の空間に湾曲した磁場を形成するマグネトロンスパッタカソードにおいて、
上記磁石装置の内側環状磁石と外側環状磁石との間隔に広狭をつけ、上記ターゲットの表面近傍の空間に形成される湾曲した磁場の水平磁場強度に強弱をつけ、上記湾曲した磁場の水平磁場強度の最も強い磁場強度が、そのスパッタ圧力下で、放電を発生させるのに十分な強度をもち、最も弱い磁場強度が、そのスパッタ圧力下で、放電を発生させない程度の強度となるように構成したことを特徴とするマグネトロンスッパタカソード。A magnetic device that surrounds the inner annular magnet in a ring shape with an outer annular magnet spaced from the inner annular magnet is arranged behind the target, and the magnetic field curved in the space near the surface of the target by this magnet device. In the magnetron sputter cathode to form
The gap between the inner annular magnet and the outer annular magnet of the magnet device is widened, the horizontal magnetic field strength of the curved magnetic field formed in the space near the surface of the target is increased and decreased, and the horizontal magnetic field strength of the curved magnetic field is increased. The strongest magnetic field strength is strong enough to generate a discharge under the sputtering pressure, and the weakest magnetic field strength is strong enough not to generate a discharge under the sputtering pressure. Magnetron spatter cathode characterized by that. ターゲットの背後に配設される内側環状磁石が円形であり、かつターゲットの中心軸より中心軸をずらして配置され、内側環状磁石の廻りに内側環状磁石と間隔をおいて配設される外側環状磁石が円形であり、円形の外側環状磁石と円形の内側環状磁石との間隔がターゲットの中心軸側におけるよりターゲットの外周側において広くなるように構成したことを特徴とする請求項１に記載のマグネトロンスッパタカソード。  The inner annular magnet disposed behind the target is circular, and is disposed with the central axis shifted from the central axis of the target, and the outer annular magnet disposed around the inner annular magnet and spaced from the inner annular magnet. 2. The magnet according to claim 1, wherein the magnet is circular, and the distance between the circular outer annular magnet and the circular inner annular magnet is wider on the outer peripheral side of the target than on the central axis side of the target. Magnetron sputter cathode. ターゲットの背後に配設される内側環状磁石が円形であり、かつターゲットの中心軸より中心軸をずらして配置され、内側環状磁石の廻りに内側環状磁石と間隔をおいて配設される外側環状磁石が円形であり、円形の外側環状磁石と円形の内側環状磁石との間隔がターゲットの中心軸側におけるよりターゲットの外周側において狭くなるように構成したことを特徴とする請求項１に記載のマグネトロンスッパタカソード。  The inner annular magnet disposed behind the target is circular, and is disposed with the central axis shifted from the central axis of the target, and the outer annular magnet disposed around the inner annular magnet and spaced from the inner annular magnet. 2. The magnet according to claim 1, wherein the magnet is circular, and the distance between the circular outer annular magnet and the circular inner annular magnet is narrower on the outer peripheral side of the target than on the central axis side of the target. Magnetron sputter cathode.
JP19176295A 1995-07-27 1995-07-27 Magnetron sputter cathode Expired - Lifetime JP3629305B2 (en)

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US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
US6497802B2 (en) 1999-02-12 2002-12-24 Applied Materials, Inc. Self ionized plasma sputtering
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
US6290825B1 (en) 1999-02-12 2001-09-18 Applied Materials, Inc. High-density plasma source for ionized metal deposition
US6440282B1 (en) 1999-07-06 2002-08-27 Applied Materials, Inc. Sputtering reactor and method of using an unbalanced magnetron
JP4685228B2 (en) * 2000-02-01 2011-05-18 アプライド マテリアルズ インコーポレイテッド Sputtering apparatus and film forming method
US6663754B2 (en) 2001-04-13 2003-12-16 Applied Materials, Inc. Tubular magnet as center pole in unbalanced sputtering magnetron
US6491801B1 (en) 2001-08-07 2002-12-10 Applied Materials, Inc. Auxiliary vertical magnet outside a nested unbalanced magnetron
US7485210B2 (en) 2004-10-07 2009-02-03 International Business Machines Corporation Sputtering target fixture
JP2012136780A (en) * 2012-02-13 2012-07-19 Ulvac Japan Ltd Magnet system, magnetron sputtering apparatus

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