JP3622034B2 - Surface treatment method for vacuum deposition film forming chamber - Google Patents
Surface treatment method for vacuum deposition film forming chamber Download PDFInfo
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- JP3622034B2 JP3622034B2 JP00689695A JP689695A JP3622034B2 JP 3622034 B2 JP3622034 B2 JP 3622034B2 JP 00689695 A JP00689695 A JP 00689695A JP 689695 A JP689695 A JP 689695A JP 3622034 B2 JP3622034 B2 JP 3622034B2
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- film forming
- forming chamber
- vacuum deposition
- deposition film
- vacuum
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- 238000001771 vacuum deposition Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 12
- 238000004381 surface treatment Methods 0.000 title claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 12
- -1 silane compound Chemical class 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 33
- 238000000151 deposition Methods 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 230000008021 deposition Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005422 blasting Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000005051 trimethylchlorosilane Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- JOOMLFKONHCLCJ-UHFFFAOYSA-N N-(trimethylsilyl)diethylamine Chemical compound CCN(CC)[Si](C)(C)C JOOMLFKONHCLCJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- SNTPMMKFYFRGHD-UHFFFAOYSA-N chloro-dimethyl-(trifluoromethyl)silane Chemical compound C[Si](C)(Cl)C(F)(F)F SNTPMMKFYFRGHD-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- DRUOQOFQRYFQGB-UHFFFAOYSA-N ethoxy(dimethyl)silicon Chemical compound CCO[Si](C)C DRUOQOFQRYFQGB-UHFFFAOYSA-N 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【０００１】
【産業上の利用分野】
本発明は、真空蒸着膜形成室の表面処理方法及び真空蒸着膜形成室に関する。
【０００２】
【従来の技術】
半導体、液晶製造分野を始め、真空蒸着を行う産業においては、例えばシリコンウエハ、ガラス基板、工具類といった本来の被蒸着物の表面に、種々の物質をコーティングすることを目的としているが、ＳｉＯ２、ＩＴＯ等の蒸着物質は、被蒸着物以外の真空蒸着膜形成室の表面にも同時に蒸着し、これを防ぐことはできない。本来コーティングを目的とする被蒸着物は、所定量を蒸着すれば真空容器内部より取り出され、さらに新しい被蒸着物が真空容器内に持ち込まれ、蒸着が行われる。この作業が繰り返されるため、真空蒸着膜形成室の内部部品表面には、蒸着物が徐々に堆積していくことになる。
【０００３】
蒸着物がＳｉＯ２、ＩＴＯ等の無機質の場合、真空蒸着膜形成室の内部部品に使われる金属材料（主に、ステンレススチール、アルミニウム合金、チタン等）との密着性が十分ではなく、ＳｉＯ２、ＩＴＯ等の蒸着物の付着量が増加するに従って、蒸着膜内部に堆積される内部応力によって剥離現象が生じる。
【０００４】
いったん、堆積した膜が剥離すると、これらはパーティクル化し、本来の被蒸着物表面を汚染するとともにその品質を劣化させる。半導体や液晶製造時における不良品発生の原因は、このパーティクルによるところが大きい。
【０００５】
この際、膜剥離によるパーティクルを抑制するために、真空蒸着装置内部に蒸着物が厚く付着する（剥離膜厚に達する）前に真空蒸着装置内部の部品表面を洗浄し、付着した蒸着物を除去することが従来行われてきた。
【０００６】
ＳｉＯ２やＩＴＯを蒸着する場合、他の蒸着物（例えば、アルミニウム、ニッケル。タングステン等）に比べ、より膜厚が小さいにもかかわらず剥離現象が生じる。かかる場合、頻繁に真空蒸着装置の運転を中断し、部品を洗浄、交換しなければならず、装置の稼働率を著しく低下させることになる。
【０００７】
従来、いったん付着したＳｉＯ２やＩＴＯは化学薬品或いはブラスト等によって除去される。また、膜剥離を抑制するため、ブラストや熔射等によって表面を粗面化する方法が一般的に採用されている。
【０００８】
パーティクルを原因とする不良品の発生率が高い真空蒸着の場合、部品表面に付着したパーティクルが真空容器内部に持ち込まれることは極力抑制されなければならない。しかしながら、化学洗浄や特にブラスト処理、熔射処理、を施された表面には膨大な数のパーティクルが付着するため、純水中で超音波洗浄等によって清浄化しなくてはならない。
【０００９】
純水による洗浄工程はもちろん、水と直接接触しない場合でも、大気に晒すだけでも部品表面には水分が吸着される。吸着された水分は、従来はベーキングと呼ばれる加熱処理により除去されていた。ベーキング工程では、付着水の完全なる除去は困難であり、ベーキング装置から取り出したときに、再び空気中の水分が吸着されるので、実質的には表面に水分を残したまま真空容器内に戻されることは避けられなかった。
【００１０】
ＳｉＯ２やＩＴＯの場合、表面に付着する水分が多いほど剥離しやすい傾向にあるが、従来は、表面の粗面化、或いはベーキングによる水分除去しか行われていない。このため、他の蒸着物に比べて、ＳｉＯ２やＩＴＯの場合不良品の発生率が高く、また、部品の洗浄も頻繁に行われていた。
【００１１】
【発明が解決しようとする課題】
本発明は、真空蒸着膜形成室に付着するパーティクルを無くすとともに、蒸着物の剥離を抑制し、不良品の発生率を抑制するための真空蒸着膜形成室の処理方法及び真空蒸着膜形成室を提供することを目的とする。
【００１２】
【課題を解決するための手段】
本発明は、以下の真空蒸着膜形成室の処理方法を提供するものである。
【００１３】
１． 真空蒸着膜形成室をシラン化合物によりコーティングすることを特徴とする真空蒸着膜形成室の表面処理方法。
【００１４】
２． 真空蒸着膜形成室に金属熔射膜を形成し、該金属熔射膜をシラン化合物によりコーティングすることを特徴とする真空蒸着膜形成室の表面処理方法。
【００１５】
３． 真空蒸着膜形成室に金属熔射膜層及びシランコーティング層をこの順に積層してなる真空蒸着膜形成室。
【００１６】
本発明において、シラン化合物としては、以下の化合物が例示される：
（１） フッ素化されていてもよいアルコキシシラン類：トリメチルメトキシシラン、トリメチルエトキシシラン、テトラメトキシシラン、メチルトリエトキシシラン、テトラエトキシシラン、メチルジメトキシシラン、メチルジエトキシシラン、ジメチルエトキシシラン、トリメトキシトリフルオロプロピルシランなど；
（２） フッ素化されていてもよいクロロシラン類：トリメチルクロロシラン、ジメチルジクロロシラン、ジメチルクロロシラン、ジメチルトリフルオロメチルクロロシランなど；
（３） フッ素化されていてもよいシラザン類：ヘキサメチルジシラザン、サイクリックシラザン混合物（〔Ｍｅ２ＳｉＮＨ〕ｎ、ｎ＝３〜４）、ジメチルトリメチルシリルアミン、ジエチルトリメチルシリルアミン、ジメチルトリ（トリフルオロメチル）シリルアミンなど。
【００１７】
好ましいシラン化合物として、トリメチルメトキシシラン、トリメチルクロロシラン、ヘキサメチルジシラザンが挙げられる。
【００１８】
熔射される金属としては、アルミニウム（Ａｌ）、チタン（Ｔｉ）、銅（Ｃｕ）、モリブデン（Ｍｏ）等が挙げられる。
【００１９】
真空蒸着膜形成室としては、シリコンウエハ、ガラス基板、工具類などの被蒸着物が蒸着される際に、該被蒸着物が収容される部屋を意味する。該真空蒸着膜形成室の表面は、蒸着物が付着する可能性のあるものであり、真空蒸着膜形成室を構成する内部部品としては、防着板、マスク、ホルダー、トレイ等が挙げられる。真空蒸着膜形成室は、従来の真空蒸着の際に形成されていたものがそのまま用いられる。
【００２０】
金属の熔射及びシラン化合物のコーティングは、各々公知の方法により容易に真空蒸着膜形成室表面に形成することができる。
【００２１】
真空蒸着膜形成室の内面を構成する各部品表面は、熔射またはシラン化合物のコーティング処理に先立ち、クロム酸等で前処理するのが好ましい。
【００２２】
なお、コーティングは、ＳｉＯ２の蒸着物に対しては特にシラン化合物を用いるのが好ましいが、ＩＴＯ（インジウム・錫オキシド）を蒸着させる場合にはシラン化合物の代わりに、又はシラン化合物とともにチタン化合物、インジウム化合物、錫化合物によりコーティングするのが好ましい。
【００２３】
また、シリコンウエハなどへの真空蒸着方法自体も、従来公知の方法がそのまま本発明に適用される。
【００２４】
【発明の効果】
本発明によれば、パーティクルや剥離した薄膜により蒸着製品が汚染される可能性が大幅に軽減され、不良品の発生率が大きく低下する。
【００２５】
【実施例】
以下、本発明を実施例とともに説明するが、本発明がこれら実施例に限定されないことはいうまでもない。
【００２６】
実施例１〜１３及び比較例１〜４
ＳｉＯ２ターゲットを取り付けたスパッタ装置にて、種々の材質（ＳＵＳ３０４、ＡｌまたはＴｉ）の蒸着膜形成室の部品に薄膜を形成させ、膜の付着状況を観察した。各種の条件及び剥離性を表１に示す。
【００２７】
なお、ブラストは、メディヤ材としてＡｌ２Ｏ３を用い、圧力４．５ｋｇ／ｃｍ２の条件で行った。また、熔射は、プラズマ熔射により行い、膜厚は１５０ミクロンであった。
【００２８】
また、スパッタ条件は、出力（２４０Ｗ・Ｈｒ）、造膜速度（１．２５μｍ／Ｈｒ）であった。
【００２９】
さらに、表面処理は、デップコート後、２００℃で１時間ベーキングした。
【００３０】
表１中の表面処理剤の記号は、以下の通りである。
【００３１】
ＴＭＭＳ：トリメチルメトキシシラン
ＴＭＣＳ：トリメチルクロロシラン
ＨＭＤＳ：ヘキサメチルジシラザン
ＴＭＴＦＳ：トリメトキシトリフルオロプロピルシラン
【００３２】
【表１】
ＳｉＯ２ターゲットの代わりにＩＴＯターゲットを用いた他は上記実施例１〜１３及び比較例１〜４と同様にして薄膜の付着状況を観察した。結果を表２に示す。
【００３３】
【表２】
ＳｉＯ２ターゲットを取り付けたスパッタ装置を用いる代わりに、プラズマＣＶＤ装置内でテトラエトキシシラン（ＴＥＯＳ）を用いてＳｉＯ２の薄膜を形成した以外は、実施例１と同様にして薄膜の付着状況を観察した。結果を表３に示す。
【００３４】
なお、プラズマＣＶＤ装置による造膜速度は、３μｍ／Ｈｒであった。
【００３５】
【表３】
[Industrial application fields]
The present invention relates to a surface treatment method for a vacuum vapor deposition film forming chamber and a vacuum vapor deposition film forming chamber.
[0002]
[Prior art]
Semiconductor, began LCD manufacturing field, and in the industry for performing vacuum deposition, for example a silicon wafer, a glass substrate, the surface of the original evaporation object such tools include, but are intended to coat various materials, SiO 2 The deposition material such as ITO is deposited on the surface of the vacuum deposition film forming chamber other than the deposition object at the same time, and this cannot be prevented. The deposition object originally intended for coating is taken out from the inside of the vacuum container when a predetermined amount is deposited, and a new deposition object is brought into the vacuum container to perform deposition. Since this operation is repeated, the vapor deposition is gradually deposited on the surface of the internal components of the vacuum vapor deposition film forming chamber.
[0003]
In the case where the deposited material is inorganic such as SiO 2 or ITO, the adhesion to the metal material (mainly stainless steel, aluminum alloy, titanium, etc.) used for the internal parts of the vacuum deposited film forming chamber is not sufficient, and SiO 2 As the deposition amount of the deposited material such as ITO increases, a peeling phenomenon occurs due to the internal stress deposited inside the deposited film.
[0004]
Once the deposited film is peeled off, these particles become particles, contaminating the original surface of the deposition object and deteriorating its quality. The cause of defective products during the manufacture of semiconductors and liquid crystals is largely due to these particles.
[0005]
At this time, in order to suppress particles due to film peeling, the surface of the parts inside the vacuum evaporation system is washed before the deposited material thickly adheres to the inside of the vacuum deposition system (removes the film thickness), and the deposited material is removed It has been done in the past.
[0006]
In the case of depositing SiO 2 or ITO, a peeling phenomenon occurs even though the film thickness is smaller than other deposited materials (for example, aluminum, nickel, tungsten, etc.). In such a case, the operation of the vacuum vapor deposition apparatus must be frequently interrupted to clean and replace the parts, and the operating rate of the apparatus is significantly reduced.
[0007]
Conventionally, once attached SiO 2 and ITO are removed by chemicals or blasting. Moreover, in order to suppress film peeling, the method of roughening the surface by blasting or spraying is generally employed.
[0008]
In the case of vacuum deposition in which the incidence of defective products due to particles is high, it is necessary to suppress as much as possible the particles adhering to the component surface from being brought into the vacuum container. However, since a large number of particles adhere to the surface that has been subjected to chemical cleaning, especially blasting and spraying, it must be cleaned by ultrasonic cleaning or the like in pure water.
[0009]
Even in the case of a cleaning process using pure water, even when it is not in direct contact with water, moisture is adsorbed on the surface of the component even if it is exposed to the atmosphere. The adsorbed moisture has been conventionally removed by a heat treatment called baking. In the baking process, it is difficult to completely remove the adhering water, and moisture in the air is adsorbed again when it is taken out from the baking apparatus. Therefore, it is returned to the vacuum container while leaving moisture on the surface. It was inevitable.
[0010]
In the case of SiO 2 or ITO, the more the moisture adhering to the surface, the easier it is to peel off. Conventionally, however, only the surface is roughened or the moisture is removed by baking. For this reason, in the case of SiO 2 or ITO, the occurrence rate of defective products is high compared to other vapor-deposited materials, and parts are frequently cleaned.
[0011]
[Problems to be solved by the invention]
The present invention eliminates particles adhering to a vacuum vapor deposition film forming chamber, suppresses separation of vapor deposits, and suppresses the occurrence rate of defective products. The purpose is to provide.
[0012]
[Means for Solving the Problems]
The present invention provides the following processing method for a vacuum deposited film forming chamber.
[0013]
1. A surface treatment method for a vacuum deposition film forming chamber, wherein the vacuum deposition film forming chamber is coated with a silane compound.
[0014]
2. A surface treatment method for a vacuum deposition film forming chamber, comprising forming a metal spray film in a vacuum deposition film forming chamber and coating the metal spray film with a silane compound.
[0015]
3. A vacuum deposition film forming chamber formed by laminating a metal spray film layer and a silane coating layer in this order in a vacuum deposition film forming chamber.
[0016]
In the present invention, examples of the silane compound include the following compounds:
(1) Alkoxysilanes which may be fluorinated: trimethylmethoxysilane, trimethylethoxysilane, tetramethoxysilane, methyltriethoxysilane, tetraethoxysilane, methyldimethoxysilane, methyldiethoxysilane, dimethylethoxysilane, trimethoxy Trifluoropropylsilane and the like;
(2) Chlorosilanes which may be fluorinated: trimethylchlorosilane, dimethyldichlorosilane, dimethylchlorosilane, dimethyltrifluoromethylchlorosilane and the like;
(3) Silazanes which may be fluorinated: hexamethyldisilazane, cyclic silazane mixture ([Me 2 SiNH] n , n = 3 to 4), dimethyltrimethylsilylamine, diethyltrimethylsilylamine, dimethyltri (trifluoro Methyl) silylamine and the like.
[0017]
Preferable silane compounds include trimethylmethoxysilane, trimethylchlorosilane, and hexamethyldisilazane.
[0018]
Examples of the metal to be sprayed include aluminum (Al), titanium (Ti), copper (Cu), and molybdenum (Mo).
[0019]
The vacuum deposition film forming chamber means a chamber in which a deposition object such as a silicon wafer, a glass substrate, or tools is deposited when the deposition object is deposited. The surface of the vacuum deposition film forming chamber has a possibility of depositing deposits, and examples of the internal parts constituting the vacuum deposition film forming chamber include a deposition plate, a mask, a holder, and a tray. What was formed in the case of the conventional vacuum evaporation is used as it is for the vacuum evaporation film formation chamber.
[0020]
The metal spray and the silane compound coating can each be easily formed on the surface of the vacuum deposition film forming chamber by a known method.
[0021]
The surface of each part constituting the inner surface of the vacuum vapor deposition film forming chamber is preferably pretreated with chromic acid or the like prior to spraying or coating with a silane compound.
[0022]
In addition, it is preferable to use a silane compound for the SiO 2 deposit, but in the case of depositing ITO (indium / tin oxide), the coating is a titanium compound instead of the silane compound or together with the silane compound, It is preferable to coat with an indium compound or a tin compound.
[0023]
Further, as a vacuum deposition method itself on a silicon wafer or the like, a conventionally known method is applied to the present invention as it is.
[0024]
【The invention's effect】
According to the present invention, the possibility that the deposited product is contaminated by the particles or the peeled thin film is greatly reduced, and the incidence of defective products is greatly reduced.
[0025]
【Example】
EXAMPLES Hereinafter, although this invention is demonstrated with an Example, it cannot be overemphasized that this invention is not limited to these Examples.
[0026]
Examples 1-13 and Comparative Examples 1-4
A thin film was formed on the components in the deposition film forming chamber made of various materials (SUS304, Al or Ti) with a sputtering apparatus equipped with a SiO 2 target, and the state of film adhesion was observed. Various conditions and peelability are shown in Table 1.
[0027]
The blasting was performed using Al 2 O 3 as a media material under a pressure of 4.5 kg / cm 2 . The spraying was performed by plasma spraying, and the film thickness was 150 microns.
[0028]
The sputtering conditions were an output (240 W · Hr) and a film forming speed (1.25 μm / Hr).
[0029]
Furthermore, the surface treatment was baked at 200 ° C. for 1 hour after dip coating.
[0030]
The symbols for the surface treatment agent in Table 1 are as follows.
[0031]
TMMS: Trimethylmethoxysilane TMCS: Trimethylchlorosilane HMDS: Hexamethyldisilazane TMTFS: Trimethoxytrifluoropropylsilane
[Table 1]
The adhesion state of the thin film was observed in the same manner as in Examples 1 to 13 and Comparative Examples 1 to 4 except that an ITO target was used instead of the SiO 2 target. The results are shown in Table 2.
[0033]
[Table 2]
Instead of using the sputtering apparatus with the SiO 2 target attached, the thin film adhesion state was observed in the same manner as in Example 1 except that a thin film of SiO 2 was formed using tetraethoxysilane (TEOS) in the plasma CVD apparatus. did. The results are shown in Table 3.
[0034]
In addition, the film forming speed by the plasma CVD apparatus was 3 μm / Hr.
[0035]
[Table 3]
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00689695A JP3622034B2 (en) | 1995-01-20 | 1995-01-20 | Surface treatment method for vacuum deposition film forming chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00689695A JP3622034B2 (en) | 1995-01-20 | 1995-01-20 | Surface treatment method for vacuum deposition film forming chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08199334A JPH08199334A (en) | 1996-08-06 |
| JP3622034B2 true JP3622034B2 (en) | 2005-02-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP00689695A Expired - Fee Related JP3622034B2 (en) | 1995-01-20 | 1995-01-20 | Surface treatment method for vacuum deposition film forming chamber |
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| Country | Link |
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| JP (1) | JP3622034B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101090895B1 (en) * | 2003-05-09 | 2011-12-08 | 에이에스엠 아메리카, 인코포레이티드 | Reactor surface passivation through chemical deactivation |
| CN120174316A (en) * | 2025-03-27 | 2025-06-20 | 合肥江丰电子材料有限公司 | A surface treatment method for the reverse sputtering surface in an aluminum target and a copper backing plate target assembly |
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| JPH08199334A (en) | 1996-08-06 |
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