JP3612927B2 - Optical information recording medium - Google Patents

Description

【００４２】
また、拡散防止層８をＧｅＮ、拡散防止層７をＧｅＣｒＮ、ＧｅＭｏＮとし、拡散防止層８を成膜する際のスパッタガス中の窒素分圧を３０％で一定、拡散防止層７を成膜する際のスパッタガス中の窒素分圧を４０％、５０％、６０％と変化させた以外は（１）（２）と同条件で作製した媒体をそれぞれ（３）、（４）とする。この場合の比較例として拡散防止層７、８を共にＧｅＮとした場合の媒体を（０）’とする。これらの媒体を評価した結果を（表２）に示す。
【００４３】
【表２】

【００４４】
以上、（表１）及び（表２）の結果より、拡散防止層としてＧｅＣｒＮ、またはＧｅＭｏＮを用いた場合、ＧｅＮのみの場合に比べて、記録の繰り返し特性を損ねることなく耐候性が向上していることがわかる。
【００４５】
次に、拡散防止層７、８をそれぞれＧｅＮ、ＧｅＣｒＮとし、ＧｅＣｒＮ膜中に含まれるＣｒ原子数のＧｅ原子数に対する比率を５％、１０％、２０％、３０％、５０％、６０％と変化させたディスクを作製し、これらの媒体を順に（５）（６）（７）（８）（９）（１０）とする。ディスクの層構成は上記既述のディスク（０）〜（４）と同様とし、拡散防止層７を成膜する際の窒素分圧を４０％で一定、拡散防止層８のそれを２０％、３０％、４０％、５０％、６０％と変化させた。これらのディスクの評価結果を（表３）に示す。
【００４６】
【表３】

【００４７】
（表３）より、Ｃｒ含有量がＧｅに対して１０ａｔ％以上になるとＣｒの添加効果が現われ始めることがわかる。但し、Ｃｒ含有量がＧｅに対して６０ａｔ％以上となると記録の繰り返し特性が悪化する。これはＣｒがＧｅに比べ窒素と結合しにくく、窒素と結合しない余剰Ｃｒが膜中に過剰に存在し、これらの原子が記録膜へなだれ込んで記録の繰り返し特性が悪化しているためと考えられる。以上より、ＧｅＣｒＮ膜中のＣｒ含有量は、Ｇｅに対して５０％以下が好ましく、１０％以上３０％以下であることが望ましいといえる。
【００４８】
上記の説明では、Ｘ成分としてＭｏ及びＣｒを例に説明したが、Ｘの元素はＭｏ及びＣｒに限定されるものではなく、上述したように拡散防止層に含有されるＸは、情報の繰返しにともない仮に記録膜に拡散等しても、記録膜の光学特性に与える影響が少ない元素であれば良く、このような元素としてはＭｏ及びＣｒ以外に、Ｔｉ、Ｖ、Ｍｎ、Ｃｕ、Ｚｎ、Ｚｒ、Ｎｂ、Ｐｄ、Ａｇ、Ｃｄ、Ｈｆ、Ｔａ、Ｗ、Ｃ等があり、その何れを用いても効果の差は若干見られるものの本質的には含有の効果があり、その含有量についてもほぼ同様であった。
【００４９】
【発明の効果】
以上述べたように、記録膜の少なくとも一方に接してＧｅＸＮ若しくはＧｅＸＯＮを主成分とする保護層を設け、Ｘを（Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｃｕ、Ｚｎ、Ｚｒ、Ｎｂ、Ｍｏ、Ｐｄ、Ａｇ、Ｃｄ、Ｈｆ、Ｔａ、Ｗ、Ｃ）のうち少なくとも１つの元素を含む材料とすることにより、耐候性に優れ、かつ情報信号の記録消去の繰り返し特性にも優れた光情報記録媒体を得ることが可能になる。
【図面の簡単な説明】
【図１】従来の光情報記録媒体の層構成例を示す断面図で
（ａ）は、４層構成の光記録媒体の断面図
（ｂ）は、５層構成の光記録媒体の断面図
【図２】本発明の光情報記録媒体の一層構成を示す断面図
【図３】（ＧｅＸ）・Ｏ・Ｎの組成範囲を示す三角組成図
【図４】本発明の成膜装置の一例を示す図
【符号の説明】
１ 基板
２ 保護層
３ 記録膜
４ 保護層
５ 反射層
６ 保護層
７ 拡散防止層
８ 拡散防止層
９ 真空容器
１０ 基板
１１ 基板駆動装置
１２ ターゲット
１３ 陰極
１４ ガス供給口
１５ 排気口[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical recording information medium capable of recording information at high density and high speed using optical means such as laser beam irradiation, and a method for producing the same.
[0002]
[Prior art]
Magneto-optical recording media, phase-change recording media, and the like are known as media capable of recording information in a large capacity and capable of being reproduced and rewritten at high speed. These optical recording media utilize differences in optical properties of recording materials caused by local irradiation of laser light as recording. For example, in magneto-optical recording media, reflected light polarization caused by differences in magnetization state. The difference in the rotation angle of the surface is used as a record. In addition, the phase change type recording medium uses the fact that the amount of reflected light with respect to light of a specific wavelength differs between the crystalline state and the amorphous state, and the recording can be performed by modulating the output power of the laser. Since erasure and overwrite recording can be performed simultaneously, there is an advantage that information signals can be rewritten at high speed.
[0003]
Examples of the layer structure of the optical recording medium are shown in FIGS. The substrate 1 is made of resin such as polycarbonate or PMMA, glass, or the like, and generally has a guide groove for guiding a laser beam.
[0004]
The recording film 3 is made of a material that can change between different optical characteristics, and in the case of a rewritable phase change optical disc, Te—Sb—Ge, Te—Sn—Ge, Te—Sb—Ge—Se, Te. Materials whose main component is -Sn-Ge-Au, Ag-In-Sb-Te, In-Sb-Se, In-Te-Se or the like are known.
[0005]
The reflective layer 5 is generally made of a metal such as Au, Al, Cr, or a metal alloy, and is provided for the purpose of heat dissipation and effective light absorption of the recording film, but is not an essential layer.
[0006]
Although omitted in the figure, for the purpose of preventing the oxidation of the optical information recording medium and adhesion of dust, etc., a structure in which an overcoat layer is provided on the reflective layer 5, or an ultraviolet curable resin is used as an adhesive, A configuration in which a dummy substrate is bonded is generally used.
[0007]
The protective layers 2, 4, and 6 have a recording film protection function of preventing the recording film material from being oxidized, evaporated, and deformed, and by adjusting the film thickness, the absorption rate of the optical recording medium, the recorded portion, and the erasure Since it is possible to adjust the difference in reflectance between the portions, it also has the function of adjusting the optical characteristics of the medium. In addition, the conditions of the material constituting the protective layer include not only satisfying the above-mentioned purpose but also good adhesion to the recording film constituent material or the substrate, and a film with good weather resistance in which the protective layer itself does not crack. It is essential to be.
[0008]
When these protective layers are used in contact with the recording film, they must be materials that do not impair the optical change of the recording material. For example, as shown in FIG. 1B, by using two protective layers and different materials, a proposal for obtaining a medium having excellent adhesion to the substrate and a medium having excellent information repetitive recording characteristics are obtained. Proposals are known.
[0009]
Examples of the material for the protective layers 2, 4, and 6 include sulfides such as ZnS, oxides such as SiO ₂ , Ta ₂ O ₅ , and Al ₂ O ₃ , and nitrides such as GeN, Si ₃ N ₄ , and Al ₃ N ₄ . , GeON, SiON, oxynitride, other, carbides, dielectric fluoride such as AlON, or these appropriate combinations have been proposed, as a material that is exclusively applied ZnS-SiO ₂ Is mentioned.
[0010]
A technique for obtaining a good film quality by making the protective layer a composite material of different substances is known. For example, Japanese Patent Laid-Open No. 63-50931 has excellent adhesion to a substrate by adding at least one of aluminum oxide and silicon oxide to a composite dielectric of aluminum nitride and silicon nitride and limiting the refractive index thereof. An example of obtaining a protective layer having a good film quality is disclosed. Japanese Patent Laid-Open No. 2-105351 discloses an example in which a protective layer is a composite dielectric made of nitride of silicon and indium to obtain a film having good adhesion to the substrate and high ductility. . Further, Japanese Patent Laid-Open Nos. 2-265051 and 2-265052 disclose that the protective film is made of an element having a specific electric resistance smaller than that of Si, N, and Si, so that the film is hardly cracked and the recording film is protected. An example of obtaining an excellent protective layer is disclosed.
[0011]
[Problems to be solved by the invention]
It has recently been found that when recording rewriting is repeated many times, phenomena such as interdiffusion of constituent atoms and change with time in the composition of the recording film are observed between the recording film and the protective layer. This is because when the signal rewrite is repeated, the amplitude of the signal gradually decreases, and the jitter value of the mark position of the recording mark increases and the error rate of the recording signal increases. There is a problem that it is limited.
[0012]
In order to solve this problem, Japanese Patent Application No. 8-052772 discloses a technique for providing a diffusion prevention layer mainly composed of GeN, GeON or the like in contact with a recording film. The diffusion prevention layer containing GeN or GeON as a main component has excellent adhesion to the recording film and prevents the atomic diffusion between the conventional protective layer material and the recording film. It has become possible to obtain an optical information recording medium that is dramatically improved.
[0013]
However, in view of the ease of control of manufacturing conditions during production, a protective layer material having a wide margin for manufacturing conditions capable of obtaining good film quality is required. Needless to say, a medium that can be stored for a longer period of time is preferable.
[0014]
An object of the present invention is to solve the above-mentioned problems, and to provide an optical information recording medium having further excellent weather resistance, good recording erasure characteristics and repeating characteristics, and a method for producing the same.
[0015]
[Means for Solving the Problems]
In order to solve the above-described problems, an optical information recording medium according to the present invention includes a recording film whose optical characteristics reversibly change, and a first film that is in contact with the recording film and contains either GeXN or GeXON as a main component. The material component X of the first layer is Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Pd, Ag, Cd, Hf, Ta, W, C at least one element-containing Mutotomoni of the recording film, Te, Se, characterized in that it is a phase-change material mainly containing one of Sb. The optical information recording medium according to the present invention includes a recording film whose optical characteristics reversibly change, and a first layer that is in contact with the recording film and mainly contains either GeXN or GeXON. The material component X of the first layer contains at least one element of Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Pd, Ag, Cd, Hf, Ta, W, and C. In addition, the recording film is a phase change material mainly composed of three elements of Te, Sb, and Ge. A second layer containing either GeXN or GeXON as a main component may be provided on the side opposite to the first layer in contact with the recording film. In this case, the average content of the material component X of the first layer may be different from the average content of the material component X of the second layer. Further, a material layer containing S may be provided in contact with the surface of the first layer opposite to the surface in contact with the recording film.
[0016]
As described above, by providing at least one layer mainly composed of GeXN or GeXON in contact with the recording film, not only the atomic diffusion to the recording film is prevented, but also the adhesion to the recording film is improved. It becomes possible to make it. In addition, since the first layer and the second layer contain the material component X, it is possible to obtain a medium having further excellent weather resistance as compared with the case where a layer mainly composed of GeN or GeON is provided. It becomes possible.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be specifically described with reference to the drawings. An example of the layer structure of the optical information recording medium according to the present invention is shown in FIG. This is obtained by replacing the protective layers 6 and 4 with diffusion preventing layers 7 and 8 in the configuration of FIG.
[0020]
The diffusion preventing layers 7 and 8 are provided mainly for the purpose of atomic diffusion between the recording film 3 and the protective layers 2 and 4, particularly when sulfur or sulfide is contained in the protective layer, preventing diffusion of these components. This layer may be provided on either or both sides of the recording film 3, but it is preferably provided on both sides in order to more effectively prevent diffusion between the recording film and the protective layer. In some cases, the components contained in the diffusion prevention layer may diffuse into the recording film after repeated recording of information. Even in such a case, a material that does not hinder the optical change of the recording film is prevented. What is necessary is just to use as a constituent material of a layer.
[0021]
The configuration of the optical information recording medium of the present invention is not limited to the above configuration, and a configuration in which a layer made of another material is provided between the diffusion preventing layer 8 and the reflective layer 5 and the protective layer 2 is all diffused. The present invention can be applied to various configurations such as a configuration in which the material of the prevention layer 7 is replaced, a configuration without a reflective layer, or a configuration with two reflective layers.
[0022]
In the following description, in order to simplify the description, the substrate 1 has a disk-shaped polycarbonate resin having a thickness of 0.6 mm and a diameter of 120 mm, and the dielectric layers 2 and 4 have 20 mol% of SiO ₂ in ZnS. An example in which the mixture, the recording film 3, a phase change material mainly composed of a Ge—Sb—Te alloy is used as the main component, and the Al alloy is used for the reflective layer 5 will be described. However, as the recording film material, for example, in addition to Ge—Sb—Te alloy, for example, Te—Sn—Ge, Te—Sb—Ge—Se, Te—Sn—Ge—Au, Ag—In—Sb—Te Various materials such as In-Sb-Se and In-Te-Se can be used, and other materials can be used for the material of the reflective layer 5 and the protective layers 2 and 4.
[0023]
The anti-diffusion layers 7 and 8 are features that characterize the present invention, and are mainly composed of either GeXN or GeXON, and X is Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Pd. , Ag, Cd, Hf, Ta, W, and C, a material containing at least one element. X preferably contains Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W, and more preferably contains Cr.
[0024]
These diffusion prevention layers 7 and 8 are basically nitride or germanium nitride oxide on germanium, but have completely different properties from nitrides such as boron nitride, aluminum nitride and silicon nitride which have been proposed conventionally. Different. That is, these conventionally proposed nitrides have very poor adhesion to the recording film and / or the substrate due to internal stress or lubricity, and any of the constituent elements of the protective layer or the recording film. The effect which suppresses such movement is not seen at all. On the other hand, the germanium nitride or germanium nitride oxide of the present invention has an effect of suppressing the movement of elements and has good adhesion, and the present invention provides germanium nitride or germanium nitride oxide having such outstanding characteristics. Further, it is an invention that can impart further weather resistance, repeatability, and manufacturing margin.
[0025]
In addition, rare gases, H, C, H ₂ O, etc. may be contained as impurities in the protective layer among sputtering gas components such as Ar, Kr, etc. By controlling the concentration of these impurities to 10 at% or less. The same characteristics as when no impurities are contained can be obtained.
[0026]
The average composition ratio of the diffusion preventing layers 7 and 8 is the composition point A ((GeX) _90.0 O _0.0 N _{10 in the} ternary composition diagram having (GeX) · O · N as vertices shown in FIG. _.0 ), B ((GeX) _83.4 O _13.3 N _3.3 ),
C ((GeX) _35.0 O _0.0 N _65.0 ), D ((GeX) _31.1 O _55.1 N _13.8 ),
Preferably within the range surrounded by
E ((GeX) _65.0 O _0.0 N _35.0 ), F ((GeX) _53.9 O _9.20 N _36.9 ),
C ((GeX) _35.0 O _0.0 N _65.0 ), D ((GeX) _31.1 O _55.1 N _13.8 ),
It is desirable to be within the range surrounded by.
[0027]
The basis of this composition range is that when either Ge or X not bonded to nitrogen or oxygen is excessively present (hereinafter referred to as surplus Ge or X), surplus Ge or X diffuses into the recording film, If there is an excessive amount of nitrogen or oxygen that is not bonded to Ge or X, the atoms tend to be infiltrated into the recording film and prevent recording. Show.
[0028]
The range of the average composition ratio of Ge · X contained in the diffusion preventing layers 7 and 8 is preferably 50% or less, preferably 10% or more and 30% or less, with respect to Ge. The basis of the composition ratio of Ge · X is that if the X content is more than 50% of the Ge content, the substance X tends to stagnate into the recording film after repeated recording and hinder the optical change of the recording film. When it is less than 10%, the effect of adding the substance X to either GeN or GeON may not be so remarkable.
[0029]
The film thickness of the diffusion preventing layers 7 and 8 needs to be 1 nm or more. This is because when the film thickness is 1 nm or less, the effect as the diffusion preventing layer is lowered. As an upper limit of the film thickness of the diffusion preventing layer, for example, the recording film is incident on the recording light incident side. Is a range in which the laser light intensity capable of recording / reproducing can be obtained. The laser light intensity can be appropriately set depending on the laser power or the recording film material to be applied.
[0030]
Next, a method for manufacturing these optical information recording media will be described. As a method for producing the multilayer film constituting the optical information recording medium, a sputtering method, a vacuum deposition method, a CVD method or the like can be used. Here, a case where the sputtering method is used will be described as an example, and FIG. A schematic view of an example of the film forming apparatus is shown.
[0031]
A vacuum pump (not shown) is connected to the vacuum vessel 9 through an exhaust port 15 so that the inside of the vacuum vessel 9 can be kept at a high vacuum. A rare gas such as Ar, nitrogen, oxygen, or a mixed gas thereof can be supplied from the gas supply port 14 at a constant flow rate. In the figure, reference numeral 10 denotes a substrate, which is attached to a driving device 11 for self-revolving the substrate.
[0032]
Reference numeral 12 denotes a sputter target including a material component of the sputtered film, which is connected to the cathode 13. Here, a disk-shaped target having a diameter of 10 cm and a thickness of 6 mm was used as the target 12. Although not shown, the cathode 13 is connected to a DC power source or a high frequency power source through a switch. Further, the vacuum vessel 9 and the substrate 10 are kept at the anode by grounding the vacuum vessel 9.
[0033]
When the recording film 3 and the protective layer 2 are formed, a gas in which 2.5% of nitrogen is mixed with Ar is supplied at a constant flow rate so that the total pressure becomes 1.0 mTorr and 0.5 mTorr, Each of the cathodes was performed by applying power of DC 1.27 W / cm ² and RF 5.10 W / cm ² .
[0034]
When the reflective layer 5 was formed, Ar gas was supplied at a total pressure of 3.0 mTorr and a power of DC 4.45 W / cm ² was applied. As a rare gas in the sputtering gas, a sputterable rare gas such as Kr is used in addition to Ar.
[0035]
When forming the diffusion prevention layers 7 and 8, a material containing Ge and X or Ge, X, and N is used as a target, and X is Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, and Mo. , Pd, Ag, Cd, Hf, Ta, W, and C, a material containing at least one element. The film forming gas is a mixed gas containing a rare gas and nitrogen and is manufactured by reactive sputtering. When the film quality is hard, or when the internal stress of the film is large, a layer having a good film quality may be obtained by mixing a trace amount of oxygen in the film forming gas as necessary.
[0036]
As an example of the present embodiment, in the configuration of the optical information recording medium shown in FIG. 2, (1) when the diffusion prevention layer 7 is GeN and the diffusion prevention layer 8 is GeCrN, the diffusion prevention layer 7 is GeN, The case where the diffusion prevention layer 8 is GeMoN is defined as (2). Further, as a comparative example, the case where the diffusion prevention layers 7 and 8 are both GeN is (0). The film thicknesses of the diffusion preventing layers 7 and 8 in the above (0) to (2) are 10 nm and 20 nm, respectively.
[0037]
Further, when forming the GeCrN layer, GeMoN layer, and GeN layer, the target materials are GeCr, GeMo, and Ge, respectively, and the ratio of the Cr and Mo atoms contained in the GeCrN film and the GeMoN film to the number of Ge atoms is as follows. Both were set to 25%.
[0038]
Further, the sputtering gas for forming the diffusion preventing layers 7 and 8 is a mixed gas of Ar and nitrogen, the sputtering gas pressure is 10 mTorr, the sputtering power density is 6.37 W / cm ² , and all are made common. The nitrogen partial pressure in the sputtering gas when depositing the film is constant at 40%, and the nitrogen partial pressure in the sputtering gas when depositing the diffusion prevention layer 8 is changed to 20%, 30%, and 40%. Membrane was performed.
[0039]
The results of evaluating the above media are shown in (Table 1). The characteristic evaluation was performed on the weather resistance and the repeated recording characteristics. For evaluation of weather resistance, an accelerated test at 90 ° C. and 80% was conducted for 200 hours, and the presence or absence of peeling was observed with an optical microscope every 100 hours. The case where no peeling was observed until 200 hours was indicated as ◯, the case where no peeling occurred after 100 hours, the case where peeling occurred after 200 hours, and the case where peeling was observed after 100 hours were indicated as x. .
[0040]
The recording repetitive characteristic is that when the shortest mark length is 0.61 μm by the EFM signal system, a mark having a length of 3T to 11T is recorded, and the jitter value between the front end and the rear end of the mark is divided by the window width T. If the value (hereinafter referred to as jitter value) does not exceed 13% for both the front end and rear end after 100,000 times of repetitive recording, ○ at least one of the front end and rear end jitter values after 100,000 times A value exceeding 13% was indicated as x.
[0041]
[Table 1]

[0042]
Further, the diffusion prevention layer 8 is made of GeN, the diffusion prevention layer 7 is made of GeCrN, GeMoN, and the nitrogen partial pressure in the sputtering gas when forming the diffusion prevention layer 8 is constant at 30%, and the diffusion prevention layer 7 is formed. The media produced under the same conditions as (1) and (2) except that the partial pressure of nitrogen in the sputtering gas was changed to 40%, 50%, and 60% are referred to as (3) and (4), respectively. As a comparative example in this case, a medium when the diffusion prevention layers 7 and 8 are both GeN is (0) ′. The results of evaluating these media are shown in (Table 2).
[0043]
[Table 2]

[0044]
As described above, from the results of (Table 1) and (Table 2), when GeCrN or GeMoN is used as the diffusion preventing layer, the weather resistance is improved without impairing the recording repetitive characteristics as compared with the case of using only GeN. I understand that.
[0045]
Next, the diffusion prevention layers 7 and 8 are GeN and GeCrN, respectively, and the ratio of the number of Cr atoms contained in the GeCrN film to the number of Ge atoms is 5%, 10%, 20%, 30%, 50%, and 60%. A disc having a changed shape is manufactured, and these media are sequentially designated as (5), (6), (7), (8), (9), and (10). The layer structure of the disk is the same as the above-described disks (0) to (4), the nitrogen partial pressure when forming the diffusion prevention layer 7 is constant at 40%, that of the diffusion prevention layer 8 is 20%, It was changed to 30%, 40%, 50% and 60%. The evaluation results of these disks are shown in (Table 3).
[0046]
[Table 3]

[0047]
From Table 3, it can be seen that when the Cr content is 10 at% or more with respect to Ge, the effect of adding Cr begins to appear. However, when the Cr content is 60 at% or more with respect to Ge, the recording repeatability deteriorates. This is thought to be because Cr is less likely to bond with nitrogen than Ge, and excess Cr that does not bind to nitrogen exists in the film, and these atoms are swept into the recording film, deteriorating the recording repeatability. . From the above, it can be said that the Cr content in the GeCrN film is preferably 50% or less, and preferably 10% or more and 30% or less with respect to Ge.
[0048]
In the above description, Mo and Cr have been described as examples of the X component, but the element of X is not limited to Mo and Cr. As described above, X contained in the diffusion prevention layer is a repetition of information. Accordingly, even if it is diffused into the recording film, any element that has little influence on the optical properties of the recording film may be used. Such elements include Ti, V, Mn, Cu, Zn, in addition to Mo and Cr. There are Zr, Nb, Pd, Ag, Cd, Hf, Ta, W, C, etc. Even if any of them is used, there is a slight difference in effect, but there is essentially an effect of inclusion, and the content is also It was almost the same.
[0049]
【The invention's effect】
As described above, a protective layer mainly composed of GeXN or GeXON is provided in contact with at least one of the recording films, and X is (Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Pd, By using a material containing at least one element of Ag, Cd, Hf, Ta, W, and C), an optical information recording medium having excellent weather resistance and excellent information signal recording / erasing repetition characteristics is obtained. It becomes possible.
[Brief description of the drawings]
FIG. 1A is a cross-sectional view showing an example of a layer structure of a conventional optical information recording medium, FIG. 1A is a cross-sectional view of an optical recording medium having a four-layer structure, and FIG. 2 is a cross-sectional view showing a single layer structure of an optical information recording medium of the present invention. FIG. 3 is a triangular composition diagram showing a composition range of (GeX) .O.N. FIG. 4 shows an example of a film forming apparatus of the present invention. Figure [Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate 2 Protective layer 3 Recording film 4 Protective layer 5 Reflective layer 6 Protective layer 7 Diffusion prevention layer 8 Diffusion prevention layer 9 Vacuum vessel 10 Substrate 11 Substrate driving device 12 Target 13 Cathode 14 Gas supply port 15 Exhaust port

Claims (10)

A recording film whose optical properties reversibly change;
A first layer in contact with the recording film and mainly composed of either GeXN or GeXON;
The material component X of the first layer contains at least one element of Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Pd, Ag, Cd, Hf, Ta, W, and C. including Mutotomoni,
An optical information recording medium , wherein the recording film is a phase-change material mainly comprising any one of Te, Se, and Sb . A recording film whose optical properties reversibly change;
A first layer mainly comprising either GeXN or GeXON in contact with the recording film;
The material component X of the first layer contains at least one element of Ti, V, Cr, Mn, Cu, Zn, Zr, Nb, Mo, Pd, Ag, Cd, Hf, Ta, W, and C. Including
An optical information recording medium, wherein the recording film is a phase change material mainly composed of three elements of Te, Sb, and Ge. 3. The optical information recording medium according to claim 1, further comprising: a material layer containing S that is in contact with a surface of the first layer that is opposite to a surface that is in contact with the recording film. . The recording film has a second layer that is in contact with the surface opposite to the surface in contact with the first layer, and has GeXN or GeXON as a main component, and the material component X of the first layer average content, the optical information recording medium according to any one of claims 1 to 3, characterized in that differ from the average content of the material component X of the second layer. Of the first layer and the second layer, the average composition of the layer located on the laser incident side with respect to the recording film is (Ge _1-x X _x ) _a O _b N _c (where a> 0 , B ≧ 0, c> 0), and the average composition of the layer located on the side opposite to the laser incident side is (Ge _1−y X _y ) _d O _e N _f (where d> 0, e ≧ 0, f 5. The optical information recording medium according to claim 4 , wherein 0 ≦ x <y. The average composition ratio of Ge and X contained in the first layer is (Ge _1−x X _x ) _a O _b N _c (where a> 0, b ≧ 0, c> 0, 0 <x ≦ the optical information recording medium according to claim 1, wherein to be within the scope represented by 0.5). The average composition ratio of Ge and X contained in the first layer is (Ge _1−x X _x ) _a O _b N _c (where a> 0, b ≧ 0, c> 0, 0.10 ≦ 3. The optical information recording medium according to claim 1, wherein the optical information recording medium is within a range represented by x ≦ 0.30). In the ternary composition diagram in which the average composition ratio of the first layer has (GeX) · O · N as vertices, the composition points A ((GeX) _90.0 O _0.0 N _10.0 ), B ((GeX) _83.4 O _13.3 N _3.3 ),
C ((GeX) _35.0 O _0.0 N _65.0 ), D ((GeX) _31.1 O _55.1 N _13.8 ),
3. The optical information recording medium according to claim 1, wherein the optical information recording medium is in a range surrounded by. The optical information recording medium according to claim 1 or 2, wherein the thickness of said first layer is 1nm or more. The optical information recording medium according to any one of claims 1-8, wherein the X comprises Cr.

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