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JP3601174B2 - Exposure apparatus and exposure method - Google Patents

Exposure apparatus and exposure method Download PDF

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Publication number
JP3601174B2
JP3601174B2 JP08580996A JP8580996A JP3601174B2 JP 3601174 B2 JP3601174 B2 JP 3601174B2 JP 08580996 A JP08580996 A JP 08580996A JP 8580996 A JP8580996 A JP 8580996A JP 3601174 B2 JP3601174 B2 JP 3601174B2
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Prior art keywords
light beam
illuminance
light
exposure apparatus
emitted
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JPH09251208A (en
Inventor
智弘 勝目
典彦 原
政光 柳原
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Nikon Corp
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Nikon Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は露光装置及び露光方法に関し、例えば液晶表示装置を製造するための感光基板に大面積のパターンを露光する際に適用し得る。
【0002】
【従来の技術】
従来、感光基板に大面積のパターンを露光する際には、所望の面積に達するまで部分パターンを繰り返し露光していた。一方、液晶表示装置を製造するための感光基板は、近年大面積化が所望されている。このため露光装置に対しては、単位時間当たりの露光領域の拡大が望まれていた。この単位時間当たりの露光領域を拡大するため、複数の投影光学系を備えた走査型露光装置が提案されている。
【0003】
この走査型露光装置は、複数の照明光学系が設けられており、それぞれの照明光学系から射出された光束でマスク上の異なる小領域(照明領域)をそれぞれ照明する。因みに、この走査型露光装置の照明光学系は、光源から射出されフライアイレンズ等を含む光学系を介して光量を均一化した光束を視野絞りによつて所望の形状に整形してマスクのパターン面上を照明する。
続いてこの走査型露光装置は、照明されたマスク上のパターン像を複数の投影光学系のそれぞれを介して感光基板上の異なる投影領域に投影して結像する。この走査型露光装置は、マスクと感光基板とを同期して、照明光学系及び投影光学系に対して走査して、マスク上のパターン領域の全面を感光基板上に転写する。
【0004】
【発明が解決しようとする課題】
ところで、感光基板にマスク上のパターンを転写する際のレジストの露光量には適正値がある。露光量は光源から射出された光束の照度と露光時間との積すなわち露光量=基板面上の露光照度×露光時間で表される。光源から射出された光束の照度は光源の輝度に比例して増減する。また光源の輝度は、使用初期に最大であり使用時間に応じて減少する。
このため光源の輝度が大きい場合、上述の走査型露光装置は、露光時間を短くするため、マスク及び基板の走査速度を上げる必要がある。これに対して、光源の輝度が小さくなると、上述の走査型露光装置は、感光基板上のレジストに対して一定露光量を得るように走査速度を下げる必要が有る。
【0005】
ところが、光源の輝度は製造誤差により一般的に不均一である。また照明光学系及び投影光学系に対するマスク及び基板の走査速度は、制御系の特性により一般に上限が有る。すなわち走査速度だけの制御によつて露光時間を短くするには限界が有る。
このため、上限の走査速度によつて対応できない程に光源の輝度が大き過ぎると、上限の走査速度による露光時間と適正露光に必要な走査速度による露光時間との差分が過剰露光時間となつて、マスクのパターンを感光基板に正確に転写できなくなるという問題があつた。
【0006】
本発明は以上の点を考慮してなされたもので、照明光学系に対する感光基板の走査速度の制御だけで露光量を適切値に調節できない程に光源の輝度が過大であつても、感光基板に適正な露光量を与え得る露光装置及び露光方法を提案しようとするものである。
【0007】
【課題を解決するための手段】
かかる課題を解決するために、一実施例を表す図2に対応付けて説明すると、請求項1に記載の露光装置では、複数の超高圧水銀ランプ10からそれぞれ射出された複数の光束L6 〜L8 を光ガイド14によつて集光した後に光ガイド14によつて分割して得た複数の光束L1 〜L5 によつて、パターンが形成されたマスク上の互いに異なる複数の照明領域M1〜M5をそれぞれ照明する照明光学系2と、複数の照明領域M1〜M5に対応して配置された複数の投影光学系4A〜4Eとを有し、複数の照明領域M1〜M5のそれぞれの像を複数の投影光学系4A〜4Eのそれぞれを介して感光基板5上に投影する露光装置において、複数の超高圧水銀ランプ10が射出したそれぞれの光束L6 〜L8 を開口率で規制する複数のシヤツタ12と、光束L1 〜L5 の照度を検出する光検出素子21と、照度信号S1〜S5に基づいて、複数のシヤツタ12によるそれぞれの開口率と、複数の光束L1 〜L5 の照度とを対応付けて照度データS6として記憶するメモリ23と、メモリ23に記憶した照度データS6に基づいて、光束L 〜L の照度が所定値となるように、光束L 〜L 中の任意の光束成分を射出している超高圧水銀ランプ10が射出する光束L 〜L を開口率で規制するようにシヤツタ12を制御する制御部22とを設けるようにする。
【0008】
請求項2に記載の露光装置では、光ガイド14は、複数の光フアイバを束ねて構成されている。
請求項3に記載の露光装置では、シヤツタ12は、光束L〜Lを通過させる開口部の開口率を制御して、光束L〜Lを規制する。
請求項4に記載の露光装置では、複数の投影光学系4A〜4Eの一部4A、4C及び4Eは、光軸がY方向に沿つて一列に配置されており、複数の投影光学系4A〜4Eの他の一部4B及び4Dは、光軸が複数の投影光学系の一部4A、4C及び4Eと平行に、かつ所定間隔をおいて一列に配置されており、Y方向とほぼ直交し、かつ感光基板5の面内方向にマスク3と感光基板5とを同期して走査する。
【0009】
請求項5に記載の露光装置では、第1及び第2の超高圧水銀ランプ10からそれぞれ射出された光束L及びLを光ガイド14によつて集光した後に光ガイド14によつて分割して得た第1及び第2の光束L及びLによつて、パターンが形成されたマスク5上の互いに異なる第1及び第2の照明領域M1及びM2をそれぞれ照明し、第1及び第2の照明領域M1及びM2のそれぞれの像を第1及び第2の投影光学系4A及び4Bをそれぞれ介して感光基板5上に投影する露光方法において、第1の超高圧水銀ランプ10から射出された光束Lを開口率で規制する第1のシヤツタ12による光束Lに対する開口率毎に、第1及び第2の光束L及びLの照度を検出する第1の処理と、第2の超高圧水銀ランプ10から射出された光束Lを開口率で規制する第2のシヤツタ12による光束Lに対する開口率毎に、第1及び第2の光束L及びLの照度を検出する第2の処理と、第1及び第2の処理による照度信号S1及びS2に基づいて、第1及び第2のシヤツタ12によるそれぞれの開口率と、第1及び第2の光束L及びLの照度とを対応付けて照度データS6として記憶する第3の処理と、パターンを感光基板5上に投影する際に、第1及び第2の光束L及びLの照度を均一にするよう、第3の処理による照度データS6に基づいて、第1及び第2のシヤツタ12を制御する第4の処理とを設ける。
【0010】
【発明の実施の形態】
以下図面について、本発明の一実施例を詳述する。
【0011】
図1は全体として走査型露光装置1を示し、大面積のパターンを一次元の走査だけで露光する。走査型露光装置1は、照明光学系2から照度を均一化した5つの光束L〜Lを射出し、この光束L〜Lによつてマスク3上のそれぞれ異なる小さな照明領域M1〜M5を照明する。走査型露光装置1は、マスク3を透過した複数の光束をそれぞれ異なる投影光学系4A〜4Eを介して、液晶表示装置を製造するための感光基板5上に投影して、異なる5つの投影領域P1〜P5に照明領域M1〜M5のパターン像を結像させる。
【0012】
因に、感光基板5上の投影領域P1〜P5は、隣り合う投影領域(例えばP1とP2、P2とP3)がX方向に互いに所定距離隔てられていると共に、隣り合う投影領域の端部同士がX方向と直交したY方向に重複するように配置されている。このため、投影光学系4A〜4Eもそれぞれの投影領域P1〜P5の配置に対応してX方向に所定距離隔てられていると共に、Y方向に重複して配置されている。
【0013】
投影光学系4A〜4Eはいずれも等倍正立系であり、その配置はマスク3上の照明領域M1〜M5と同じ配置となる。従つて、照明領域M1〜M5のパターン像が結像される投影領域P1〜P5の配置は照明領域M1〜M5と同様である。照明光学系2の光束L〜Lの光軸の平面配置は、マスク3上の照明領域M1〜M5と同様に配置されている。
【0014】
マスク3と感光基板5とは互いに対面した状態でステージ保持台6に一体に保持されている。これによりマスク3と感光基板5とは、相互の位置が一定となるように機械的に結合されていることになる。ステージ保持台6には、走査方向(X方向)に長ストロークで駆動する駆動装置が設けられている。
走査のとき走査型露光装置1は、この駆動装置によつてステージ保持台6をX方向へ駆動して、マスク3及び感光基板5を照明光学系2及び投影光学系4A〜4Eに対して一次元に同期走査させる。この同期走査によつてマスク3におけるパターン領域3Aの全面の像を感光基板5の感光面5Aに転写することができる。
【0015】
マスク3はステージ保持台6上に配置されたマスクステージ7に支持されており、複数の微動アクチユエータ(図示せず)によつてマスク3の面内方向の任意の位置に位置決めされる。これにより、走査型露光装置1は、この微動アクチユエータで位置決めして、投影光学系4A〜4Eに対するステージ保持台6の傾きに起因したパターン像の位置ずれを補正することができる。
【0016】
図2に示すように、照明光学系2は、例えば3つの超高圧水銀ランプ10が配設されており、この超高圧水銀ランプ10からそれぞれ射出された光束L〜Lを楕円鏡11、シヤツタ12、レンズ系13を介して、複数の光フアイバを束ねて構成された光ガイド14に入射して集光する。
照明光学系2は、集光した光束L〜Lを光ガイド14によつて5つの光束L〜Lに分割し、分割して得たそれぞれの光束L〜Lを射出部内のフライアイレンズ(図示せず)によつて照度を均一化して射出させる。
因みに、シャッタ12は通常の照明光学系の構成でも使用されており、部品点数を増加させることはない。
【0017】
続いて、照明光学系2は、例えば光束Lをハーフミラー15、コンデンサレンズ16を介して視野絞り17に照射し、この視野絞り17によつて光束Lを所望の形状にそれぞれ整形する。照明光学系2は、整形した光束Lをリレーレンズ18及び19を介してマスク3のパターン面上に照射して視野絞り17の像を形成する。
【0018】
照明光学系2は、光ガイド14の出射端とコンデンサレンズ16との間にハーフミラー15が設けられており、光束Lの一部を光検出素子21に入射する。照明光学系2は、光束L〜Lも光束Lと同様に処理してマスク3のパターン面上に照射すると共に、それぞれの光束L〜Lの一部を光検出素子21に入射する。
【0019】
照明光学系2は、ハーフミラー15、レンズ系20を介して光検出素子21に与えた一部の光束のそれぞれの照度に応じて照度信号S1〜S5を光検出素子21に生成させ、この照度信号S1〜S5を制御部22に与える。照明光学系2は、照度信号S1〜S5に基づいて、それぞれの光束L〜Lの照度を制御部22で求め、それぞれのシヤツタ12の開口率と対応付けて生成した照度データS6をメモリ23に記憶する。
【0020】
照明光学系2は、メモリ23に記憶した照度データS6を制御部22に読み出し、この照度データS6に基づいて制御部22で生成した制御信号S7〜S9をそれぞれシヤツタ制御部24〜26に与える。
これにより、照度が適正値を越えるとき、照明光学系2は、制御部22によつて3つのシヤツタ12のそれぞれの開口率を調節して、光束L〜Lの照度を適正値まで減少させると共に、光束L〜Lの相互間の照度を均一化させる。
【0021】
ここで、照度データS6を得る際、照明光学系2は、例えば図3に示す照度データ獲得手順に従つて動作する。すなわち照明光学系2は、ステツプSP0から入り、ステツプSP1においてパラメータMをクリアしてステツプSP2に移る。ステツプSP2において、照明光学系2は、N(ここでは3)個の光源すなわち超高圧水銀ランプ10の全シヤツタ12を全開して開口率を 100%に設定し、ステツプSP3に移る。
【0022】
ステツプSP3において、照明光学系2は、この設定での光束L〜Lの照度を検出すると、ステツプSP4に移り、このときの光束L〜Lのそれぞれの照度を3つのシヤツタ12の開口率と対応付けて記憶する。続いて、照明光学系2は、ステツプSP5に移り、パラメータMをM+1にインクリメントしてステツプSP6に移る。ステツプSP6において、照明光学系2は、M(ここでは1)番目の超高圧水銀ランプ10のシヤツタ12を閉じて開口率を0%に設定してステツプSP7に移る。
【0023】
ステツプSP7において、照明光学系2は、光束L〜Lの照度を検出すると、ステツプSP8に移りこのときの光束L〜Lのそれぞれの照度を3つのシヤツタ12の開口率と対応付けて記憶する。続いて、照明光学系2は、ステツプSP9に移りパラメータMがM=Nを満たすか否かを判断する。
ステツプSP9において否定結果を得ると、照明光学系2は、全ての超高圧水銀ランプ10のシヤツタ12の開口率に対応した照度を検出していないと判断してステツプSP10に移る。ステツプSP10において、照明光学系2は、M(ここでは1)番目の超高圧水銀ランプ10のシヤツタ12の開口率を再び 100%に設定してステツプSP5に戻り、上述の手順を繰り返す。
【0024】
やがて、ステツプSP9において肯定結果を得ると、照明光学系2は、全ての超高圧水銀ランプ10のシヤツタ12の開口率に対応した照度を検出したと判断して、ステツプSP11に移り、照度データ獲得手順を終了する。
このようにして得た開口率 100%のときの光束L〜Lの照度と、開口率0%のときの光束L〜Lの照度との差分を総合することによつて、照明光学系2は、開口率を制御したシヤツタ12に対応した超高圧水銀ランプ10が射出した光束L〜Lのそれぞれの照度を検出することができる。
【0025】
またこの光束L〜Lのそれぞれの照度が分かると、照明光学系2は、この光束L〜Lを分割して得た2次光束である光束L〜Lへの光束L〜Lのそれぞれの分割率を上述した差分に基づいて検出することができる。この分割率は、光ガイド14の構成を変更しない限り一定であることが明らかである。
【0026】
以上の構成において、照明光学系2は、例えば1ロツトの感光基板5を露光する前やランプ交換直後に、それぞれの3つの超高圧水銀ランプ10に対応した照度データS6を得てメモリ23に記憶しておく。
照明光学系2は、照度データS6を得る際に、光束L〜Lのいずれかの照度が所定値を越えていることを検出すると、いずれかの超高圧水銀ランプ10の輝度が過大であると判断して、光束L〜Lの照度を校正する。
【0027】
すなわち、照明光学系2は、露光直前に獲得した照度データS6をメモリ23から読み出し、3つの超高圧水銀ランプ10が射出する光束L〜Lの照度と、3つのシヤツタ12の開口率と、光束L〜Lへの光束L〜Lのそれぞれの分割率とに基づいて、3つのシヤツタ12に対する最適な開口率の組合せを設定する。
【0028】
これにより、いずれかの超高圧水銀ランプ10の輝度が過大であつて、かつ走査速度の調整だけで露光量を適切値に調節することが困難である状態でも、感光基板5の全面に亘つて均一な照度の光束で照明して適正露光量で感光基板5に露光できることになる。
【0029】
以上の構成によれば、複数の超高圧水銀ランプ10から射出されたそれぞれの光束L〜Lを規制するシヤツタ12の開口率と、光束L〜Lを光ガイド14によつて集光及び分割して得た光束L〜Lの照度とを対応付けてメモリ23に記憶した照度データS6に基づいて、露光前に3つのシヤツタ12に最適な開口率の組合せを設定することにより、照明光学系2に対する感光基板の走査速度の制御だけで露光量を適切値に調節できない程に超高圧水銀ランプ10の輝度が過大であつても、感光基板5に適正な露光量を与えることができる。
【0030】
なお上述の実施例においては、液晶表示装置を製造するための感光基板5に露光する場合について述べたが、本発明はこれに限らず、任意の感光基板、例えば半導体素子を製造するための感光基板に露光する場合にも適用し得る。
【0031】
また上述の実施例においては、本発明を5つの投影光学系4A〜4Eを有する走査型露光装置に適用する場合について述べたが、本発明はこれに限らず、投影光学系を5つ以外の任意の数だけ配置した露光装置にも適用し得る。
【0032】
さらに上述の実施例においては、本発明を1次元にだけ走査して露光する露光装置1に適用する場合について述べたが、本発明はこれに限らず、2次元に走査して露光する露光装置にも適用できる。
【0033】
さらに上述の実施例においては、露光前に2次光束である光束L〜Lの照度を校正する場合について述べたが、本発明はこれに限らず、露光中に1次光束を規制して、2次光束の照度を制御する場合にも適用できる。
【0034】
さらに上述の実施例においては、光束L〜Lを規制するため、シヤツタ12の開口率を制御する場合について述べたが、本発明はこれに限らず、光束を規制する光束規制手段は任意の構成のもので良い。
【0035】
さらに上述の実施例においては、光ガイド14によつて光束を集光及び分割する場合について述べたが、本発明はこれに限らず、任意の構成の光学系によつて光束を集光及び分割する場合にも適用できる。
【0036】
【発明の効果】
上述のように、本発明によれば、複数の光源から射出されたそれぞれの1次光束を規制する光束規制手段の規制状態と、1次光束を光伝送路によつて集光及び分割して得た2次光束の照度とを対応付けて記憶手段に記憶した記憶結果に基づいて、複数の光束規制手段に最適な規制状態の組合せを設定することにより、照明光学系に対する感光基板の走査速度の制御だけで露光量を適切値に調節できない程に光源の輝度が過大であつても、感光基板に適正な露光量を与え得る露光装置及び露光方法を実現することができる。
【図面の簡単な説明】
【図1】本発明による露光装置及び露光方法の一実施例による走査型露光装置を示す斜視図である。
【図2】実施例による照明光学系の構成の説明に供する略線図である。
【図3】実施例による照度データ獲得手順の説明に供するフローチヤートである。
【符号の説明】
1……走査型露光装置、2……照明光学系、3……マスク、3A……パターン領域、4A〜4E……投影光学系、5……感光基板、5A……感光面、6……ステージ保持台、7……マスクステージ、10……超高圧水銀ランプ、11……楕円鏡、12……シヤツタ、13……レンズ系、14……光ガイド、15……ハーフミラー、16……コンデンサレンズ、17……視野絞り、18、19……リレーレンズ、20……レンズ系、21……光検出素子、22……制御部、23……メモリ、24〜26……シヤツタ制御部、L〜L……光束、P1〜P5……投影領域、M1〜M5……照明領域。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an exposure apparatus and an exposure method, and can be applied to, for example, exposing a large area pattern on a photosensitive substrate for manufacturing a liquid crystal display device.
[0002]
[Prior art]
Conventionally, when exposing a large area pattern to a photosensitive substrate, a partial pattern is repeatedly exposed until a desired area is reached. On the other hand, a photosensitive substrate for manufacturing a liquid crystal display device has recently been desired to have a large area. For this reason, it has been desired for an exposure apparatus to enlarge an exposure area per unit time. In order to enlarge the exposure area per unit time, a scanning exposure apparatus having a plurality of projection optical systems has been proposed.
[0003]
This scanning type exposure apparatus is provided with a plurality of illumination optical systems, and illuminates different small areas (illumination areas) on the mask with light beams emitted from the respective illumination optical systems. Incidentally, the illumination optical system of this scanning type exposure apparatus uses a field stop to shape a light beam emitted from a light source and having a uniform light amount through an optical system including a fly-eye lens or the like into a desired shape using a field stop. Illuminate the surface.
Subsequently, the scanning type exposure apparatus projects an image of the illuminated pattern on the mask onto a different projection area on the photosensitive substrate via each of the plurality of projection optical systems to form an image. This scanning type exposure apparatus synchronizes a mask and a photosensitive substrate, scans the illumination optical system and the projection optical system, and transfers the entire pattern region on the mask onto the photosensitive substrate.
[0004]
[Problems to be solved by the invention]
Incidentally, there is an appropriate value for the exposure amount of the resist when the pattern on the mask is transferred to the photosensitive substrate. The exposure amount is represented by the product of the illuminance of the light beam emitted from the light source and the exposure time, that is, the exposure amount = the exposure illuminance on the substrate surface × the exposure time. The illuminance of the light beam emitted from the light source increases and decreases in proportion to the luminance of the light source. The brightness of the light source is maximum at the beginning of use and decreases according to the use time.
For this reason, when the luminance of the light source is large, the scanning exposure apparatus described above needs to increase the scanning speed of the mask and the substrate in order to shorten the exposure time. On the other hand, when the luminance of the light source decreases, it is necessary for the above-described scanning exposure apparatus to reduce the scanning speed so as to obtain a constant exposure amount on the resist on the photosensitive substrate.
[0005]
However, the brightness of the light source is generally non-uniform due to manufacturing errors. The scanning speed of the mask and the substrate with respect to the illumination optical system and the projection optical system generally has an upper limit due to the characteristics of the control system. That is, there is a limit to shortening the exposure time by controlling only the scanning speed.
For this reason, if the luminance of the light source is too large to cope with the upper limit scanning speed, the difference between the exposure time at the upper limit scanning speed and the exposure time at the scanning speed required for proper exposure becomes an overexposure time. In addition, there has been a problem that the mask pattern cannot be accurately transferred to the photosensitive substrate.
[0006]
The present invention has been made in consideration of the above points, and even if the brightness of the light source is too large to adjust the exposure amount to an appropriate value only by controlling the scanning speed of the photosensitive substrate with respect to the illumination optical system, the photosensitive substrate It is an object of the present invention to propose an exposure apparatus and an exposure method capable of giving an appropriate exposure amount to a light source.
[0007]
[Means for Solving the Problems]
In order to solve this problem, a description will be given in association with FIG. 2 showing an embodiment. In the exposure apparatus according to claim 1, a plurality of luminous fluxes L6 to L8 respectively emitted from a plurality of ultra-high pressure mercury lamps 10 are provided. Are condensed by the light guide 14 and then divided by the light guide 14 to obtain a plurality of different illumination areas M1 to M5 on the mask on which the pattern is formed. It has an illumination optical system 2 for illuminating each, and a plurality of projection optical systems 4A to 4E arranged corresponding to the plurality of illumination regions M1 to M5, respectively. In an exposure apparatus that projects onto the photosensitive substrate 5 via each of the projection optical systems 4A to 4E, a plurality of shutters 1 that regulate the respective luminous fluxes L6 to L8 emitted by the plurality of ultrahigh-pressure mercury lamps 10 with an aperture ratio. And a light detection element 21 for detecting the illuminance of the light fluxes L1 to L5, and the respective aperture ratios of the plurality of shutters 12 and the illuminances of the plurality of light fluxes L1 to L5 based on the illuminance signals S1 to S5. a memory 23 for storing the luminance data S6, based on the illuminance data S6 which is stored in the memory 23, as the illuminance of the light beam L 1 ~L 5 becomes a predetermined value, any light beam components in the light beam L 1 ~L 5 And a control unit 22 for controlling the shutter 12 so as to regulate the light fluxes L 6 to L 8 emitted by the ultrahigh-pressure mercury lamp 10 emitting light by the aperture ratio.
[0008]
In the exposure apparatus according to the second aspect, the light guide 14 is configured by bundling a plurality of optical fibers.
In the exposure apparatus according to claim 3, shutter 12 controls the opening ratio of the opening for passing the light beam L 6 ~L 8, to regulate the luminous flux L 6 ~L 8.
In the exposure apparatus according to the fourth aspect, the portions 4A, 4C, and 4E of the plurality of projection optical systems 4A to 4E have their optical axes arranged in a line along the Y direction, and the plurality of projection optical systems 4A to 4E. The other parts 4B and 4D of 4E have their optical axes parallel to the parts 4A, 4C and 4E of the plurality of projection optical systems and arranged in a line at a predetermined interval, and are substantially orthogonal to the Y direction. The mask 3 and the photosensitive substrate 5 are synchronously scanned in the in-plane direction of the photosensitive substrate 5.
[0009]
In the exposure apparatus according to claim 5, by connexion divided into the light guide 14 after the first and second light fluxes emitted respectively from the ultra-high pressure mercury lamp 10 L 6 and L 7 and by connexion condensing the light guide 14 Yotsute the light beam L 1 and L 2 the first and second obtained by the first and second illumination areas M1 and M2 differ from each other on the mask 5 in which a pattern is formed by illuminating each first and In the exposure method in which the respective images of the second illumination areas M1 and M2 are projected onto the photosensitive substrate 5 via the first and second projection optical systems 4A and 4B, respectively, the light is emitted from the first ultra-high pressure mercury lamp 10. for each opening ratio for the light flux L 6 of the first shutter 12 to regulate the light beam L 6, which is by an aperture, a first processing for detecting the first and second illumination intensity of the light beam L 1 and L 2, the 2 from the ultra-high pressure mercury lamp 10 And for each opening with respect to light flux L 7, second process of detecting the first and second illumination intensity of the light beam L 1 and L 2 of the second shutter 12 to the light beam L 7 is regulated by the aperture rate, the first and on the basis of the illuminance signals S1 and S2 according to the second process, the illumination in association with each of the opening ratio of the first and second shutters 12, and first and second light beams L 1 and L 2 illuminance a third process of storing as data S6, when projecting the pattern onto the photosensitive substrate 5, so as to equalize the first and second illumination intensity of the light beam L 1 and L 2, the illuminance data of the third process A fourth process for controlling the first and second shutters 12 based on S6 is provided.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
An embodiment of the present invention will be described below in detail with reference to the drawings.
[0011]
FIG. 1 shows a scanning exposure apparatus 1 as a whole, which exposes a large area pattern by only one-dimensional scanning. The scanning exposure apparatus 1 emits five light beams L 1 to L 5 with uniform illuminance from the illumination optical system 2, and different small illumination regions M 1 to M 1 on the mask 3 by the light beams L 1 to L 5. Illuminate M5. The scanning exposure apparatus 1 projects a plurality of luminous fluxes transmitted through the mask 3 onto a photosensitive substrate 5 for manufacturing a liquid crystal display device via different projection optical systems 4A to 4E, respectively. The pattern images of the illumination areas M1 to M5 are formed on P1 to P5.
[0012]
Incidentally, the projection areas P1 to P5 on the photosensitive substrate 5 are such that adjacent projection areas (for example, P1 and P2, P2 and P3) are separated from each other by a predetermined distance in the X direction, and ends of the adjacent projection areas are adjacent to each other. Are arranged so as to overlap in the Y direction orthogonal to the X direction. For this reason, the projection optical systems 4A to 4E are also spaced apart from each other by a predetermined distance in the X direction corresponding to the arrangement of the projection areas P1 to P5, and are also overlapped in the Y direction.
[0013]
Each of the projection optical systems 4A to 4E is an equal-size erect system, and has the same arrangement as the illumination areas M1 to M5 on the mask 3. Therefore, the arrangement of the projection areas P1 to P5 on which the pattern images of the illumination areas M1 to M5 are formed is the same as that of the illumination areas M1 to M5. The plane arrangement of the optical axes of the light beams L 1 to L 5 of the illumination optical system 2 is arranged in the same manner as the illumination areas M 1 to M 5 on the mask 3.
[0014]
The mask 3 and the photosensitive substrate 5 are integrally held on a stage holder 6 in a state where they face each other. As a result, the mask 3 and the photosensitive substrate 5 are mechanically coupled so that their mutual positions are constant. The stage holding base 6 is provided with a driving device that drives with a long stroke in the scanning direction (X direction).
At the time of scanning, the scanning type exposure apparatus 1 drives the stage holder 6 in the X direction by this driving device, and makes the mask 3 and the photosensitive substrate 5 primary to the illumination optical system 2 and the projection optical systems 4A to 4E. Scan synchronously to the original. By this synchronous scanning, the image of the entire surface of the pattern area 3A of the mask 3 can be transferred to the photosensitive surface 5A of the photosensitive substrate 5.
[0015]
The mask 3 is supported by a mask stage 7 arranged on a stage holder 6, and is positioned at an arbitrary position in the in-plane direction of the mask 3 by a plurality of fine movement actuators (not shown). Thus, the scanning type exposure apparatus 1 can perform positioning by the fine movement actuator and correct the positional deviation of the pattern image caused by the inclination of the stage holding table 6 with respect to the projection optical systems 4A to 4E.
[0016]
As shown in FIG. 2, the illumination optical system 2 is provided with, for example, three ultra-high pressure mercury lamps 10, and luminous fluxes L 6 to L 8 respectively emitted from the ultra-high pressure mercury lamp 10 are used as elliptical mirrors 11. Through a shutter 12 and a lens system 13, the light enters a light guide 14 formed by bundling a plurality of optical fibers and is focused.
The illumination optical system 2 divides the condensed light fluxes L 6 to L 8 into five light fluxes L 1 to L 5 by a light guide 14, and divides each of the obtained light fluxes L 1 to L 5 into an emission unit. The illumination is made uniform by a fly-eye lens (not shown).
Incidentally, the shutter 12 is also used in the configuration of a normal illumination optical system, and does not increase the number of components.
[0017]
Subsequently, the illumination optical system 2, for example, a half mirror 15 the light beam L 1, irradiated to the field stop 17 through a condenser lens 16, the O connexion beam L 1 to the field stop 17 shapes each into a desired shape. The illumination optical system 2, the light beam L 1 that is shaped by irradiating on the pattern surface of the mask 3 through the relay lens 18 and 19 to form an image of the field stop 17.
[0018]
In the illumination optical system 2, a half mirror 15 is provided between the exit end of the light guide 14 and the condenser lens 16, and a part of the light beam L 1 enters the light detection element 21. The illumination optical system 2, the light beam L 2 ~L 5 be treated in the same manner as the light beam L 1 is irradiated on the pattern surface of the mask 3, a portion of each of the light beams L 2 ~L 5 to the light detection element 21 Incident.
[0019]
The illumination optical system 2 causes the photodetector 21 to generate illuminance signals S1 to S5 in accordance with the illuminance of each of a part of the light beam provided to the photodetector 21 via the half mirror 15 and the lens system 20. The signals S1 to S5 are given to the control unit 22. The illumination optical system 2 determines the illuminance of each of the light fluxes L 1 to L 5 by the control unit 22 based on the illuminance signals S 1 to S 5 , and stores the illuminance data S 6 generated in association with the aperture ratio of the respective shutters 12. 23.
[0020]
The illumination optical system 2 reads out the illuminance data S6 stored in the memory 23 to the control unit 22, and gives control signals S7 to S9 generated by the control unit 22 based on the illuminance data S6 to the shutter control units 24 to 26, respectively.
Thus, when the illuminance exceeds a proper value, the illumination optical system 2, by adjusting the respective aperture ratio of Yotsute three shutter 12 to the control unit 22, reducing the illuminance of the light beam L 1 ~L 5 to the proper value together we are, making uniform the illuminance of mutual light beam L 2 ~L 5.
[0021]
Here, when obtaining the illuminance data S6, the illumination optical system 2 operates, for example, according to the illuminance data acquisition procedure shown in FIG. That is, the illumination optical system 2 enters from step SP0, clears the parameter M in step SP1, and proceeds to step SP2. In step SP2, the illumination optical system 2 fully opens the N (here, 3) light sources, that is, all the shutters 12 of the ultrahigh-pressure mercury lamp 10, sets the aperture ratio to 100%, and proceeds to step SP3.
[0022]
In step SP3, the illumination optical system 2 detects the illuminance of the light beam L 1 ~L 5 in this setting, proceeds to step SP4, the light beam L 1 ~L each of the three shutter 12 the illumination of 5 at this time It is stored in association with the aperture ratio. Subsequently, the illumination optical system 2 proceeds to step SP5, increments the parameter M to M + 1, and proceeds to step SP6. In step SP6, the illumination optical system 2 closes the shutter 12 of the M-th (here, the first) ultrahigh-pressure mercury lamp 10, sets the aperture ratio to 0%, and proceeds to step SP7.
[0023]
In step SP7, the illumination optical system 2 detects the illuminance of the light beam L 1 ~L 5, the correspondence with the aperture ratio of the light beam L 1 ~L 3 single shutter 12 each illuminance 5 when this moves to step SP8 To remember. Subsequently, the illumination optical system 2 proceeds to step SP9, and determines whether or not the parameter M satisfies M = N.
If a negative result is obtained in step SP9, the illumination optical system 2 determines that the illuminance corresponding to the aperture ratios of the shutters 12 of all the ultrahigh-pressure mercury lamps 10 has not been detected, and proceeds to step SP10. In step SP10, the illumination optical system 2 sets the aperture ratio of the shutter 12 of the M-th (here, the first) ultrahigh-pressure mercury lamp 10 to 100% again, returns to step SP5, and repeats the above procedure.
[0024]
Eventually, when a positive result is obtained in step SP9, the illumination optical system 2 determines that the illuminance corresponding to the aperture ratios of the shutters 12 of all the ultra-high pressure mercury lamps 10 has been detected, and proceeds to step SP11 to acquire illuminance data. End the procedure.
Yotsute to total such as illuminance of the light beam L 1 ~L 5 when the opening ratio of 100% thus obtained, a difference between the illuminance of the light beam L 1 ~L 5 when the opening ratio of 0%, lighting The optical system 2 can detect the illuminance of each of the light beams L 6 to L 8 emitted from the ultrahigh-pressure mercury lamp 10 corresponding to the shutter 12 whose aperture ratio is controlled.
[0025]
Further, when each of the illuminance of the light beam L 6 ~L 8 is seen, the illumination optical system 2, the light beam L to the optical beam L 1 ~L 5 is a secondary light beam which is obtained by dividing the light beam L 6 ~L 8 each division ratio of 6 ~L 8 can be detected based on the difference described above. It is clear that this division ratio is constant unless the configuration of the light guide 14 is changed.
[0026]
In the above configuration, the illumination optical system 2 obtains the illuminance data S6 corresponding to each of the three ultra-high-pressure mercury lamps 10 and exposes them to the memory 23, for example, before exposing the one-lot photosensitive substrate 5 or immediately after the lamp replacement. Keep it.
The illumination optical system 2, when obtaining the illuminance data S6, when any one of the illuminance of the light beam L 1 ~L 5 detects that exceeds a predetermined value, the luminance of any of the ultra-high pressure mercury lamp 10 is excessively large It is determined that there is, and the illuminance of the light fluxes L 1 to L 5 is calibrated.
[0027]
That is, the illumination optical system 2 reads the illuminance data S6 acquired immediately before exposure from the memory 23, the illuminance of the light beam L 6 ~L 8 three ultra-high pressure mercury lamp 10 is emitted, the aperture ratio of the three shutters 12 , based on the respective division of the light beam L 6 ~L 8 to the light beam L 1 ~L 5, sets the optimum combination of aperture ratio for the three shutter 12.
[0028]
Accordingly, even if the brightness of any of the ultrahigh-pressure mercury lamps 10 is excessive and it is difficult to adjust the exposure amount to an appropriate value only by adjusting the scanning speed, the entire surface of the photosensitive substrate 5 can be controlled. The photosensitive substrate 5 can be exposed at an appropriate exposure amount by illuminating with a light flux having a uniform illuminance.
[0029]
According to the above configuration, the aperture ratio of the shutter 12 that regulates the light fluxes L 6 to L 8 emitted from the plurality of ultrahigh-pressure mercury lamps 10 and the light fluxes L 6 to L 8 are collected by the light guide 14. based in association with the illuminance of the light beam L 1 ~L 5 obtained by light and dividing the illuminance data S6 which is stored in the memory 23, sets the optimum combination of aperture ratio three shutter 12 before exposure be Accordingly, even if the intensity of the ultrahigh-pressure mercury lamp 10 is too large to adjust the exposure amount to an appropriate value only by controlling the scanning speed of the photosensitive substrate with respect to the illumination optical system 2, an appropriate exposure amount is given to the photosensitive substrate 5. be able to.
[0030]
In the above-described embodiment, the case of exposing the photosensitive substrate 5 for manufacturing a liquid crystal display device has been described. However, the present invention is not limited to this, and any photosensitive substrate, for example, a photosensitive substrate for manufacturing a semiconductor element, may be used. The present invention can be applied to a case where a substrate is exposed.
[0031]
Further, in the above-described embodiment, the case where the present invention is applied to the scanning exposure apparatus having the five projection optical systems 4A to 4E has been described. However, the present invention is not limited to this, and the invention is not limited to the five projection optical systems. The present invention can also be applied to an exposure apparatus in which an arbitrary number is arranged.
[0032]
Further, in the above-described embodiment, a case has been described in which the present invention is applied to the exposure apparatus 1 for scanning and exposing only in one dimension, but the present invention is not limited to this, and the exposure apparatus for scanning and exposing in two dimensions Also applicable to
[0033]
Further, in the aforementioned embodiments have dealt with the case of calibrating the illuminance of the light beam L 1 ~L 5 is a secondary light beam before the exposure, the present invention is not limited thereto, to regulate the primary light beam during exposure Thus, the present invention can be applied to the case where the illuminance of the secondary light beam is controlled.
[0034]
Furthermore, in the above-described embodiment, the case where the aperture ratio of the shutter 12 is controlled to regulate the light fluxes L 6 to L 8 has been described. However, the present invention is not limited to this, and the light flux regulating means for regulating the light flux is optional. The configuration of
[0035]
Further, in the above-described embodiment, the case where the light beam is condensed and divided by the light guide 14 has been described. However, the present invention is not limited to this, and the light beam is condensed and divided by an optical system having an arbitrary configuration. It can also be applied to
[0036]
【The invention's effect】
As described above, according to the present invention, the regulation state of the beam regulation means for regulating the respective primary beams emitted from the plurality of light sources, and the primary beam is condensed and divided by the optical transmission path. The scanning speed of the photosensitive substrate with respect to the illumination optical system is set by setting the optimum combination of the restricting states for the plurality of light beam restricting means based on the storage result stored in the storing means in association with the obtained illuminance of the secondary light flux. It is possible to realize an exposure apparatus and an exposure method that can provide an appropriate exposure amount to a photosensitive substrate even if the brightness of the light source is so large that the exposure amount cannot be adjusted to an appropriate value only by the above control.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a scanning type exposure apparatus according to an embodiment of an exposure apparatus and an exposure method according to the present invention.
FIG. 2 is a schematic diagram illustrating the configuration of an illumination optical system according to an embodiment.
FIG. 3 is a flowchart for explaining an illuminance data acquisition procedure according to an embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Scanning exposure apparatus, 2 ... Illumination optical system, 3 ... Mask, 3A ... Pattern area, 4A-4E ... Projection optical system, 5 ... Photosensitive substrate, 5A ... Photosensitive surface, 6 ... Stage holder 7, mask stage 10, ultra-high pressure mercury lamp 11, elliptical mirror 12, shutter 13, lens system 14, light guide 15, half mirror 16, Condenser lens, 17 Field stop, 18, 19 Relay lens, 20 Lens system, 21 Photodetector element, 22 Control unit, 23 Memory, 24-26 Shutter control unit, L 1 ~L 8 ...... beam, P1~P5 ...... projection area, M1~M5 ...... illumination area.

Claims (5)

複数の光源からそれぞれ射出された複数の1次光束を光伝送路によつて集光した後に前記光伝送路によつて分割して得た複数の2次光束によつて、パターンが形成されたマスク上の互いに異なる複数の領域をそれぞれ照明する照明光学系と、該複数の領域に対応して配置された複数の投影光学系とを有し、該複数の領域のそれぞれの像を前記複数の投影光学系のそれぞれを介して感光基板上に投影する露光装置において、
前記複数の光源が射出したそれぞれの前記1次光束を規制する複数の光束規制手段と、
前記2次光束の照度を検出する照度検出手段と、
前記検出結果に基づいて、前記複数の光束規制手段によるそれぞれの規制状態と、前記複数の2次光束の照度とを対応付けて記憶する記憶手段と、
前記記憶手段に記憶された記憶結果に基づいて、前記2次光束の照度が所定値となるように、該2次光束中の任意の光束成分を射出している前記光源が射出する前記1次光束を規制するように前記光束規制手段を制御する制御手段とを備えることを特徴とする露光装置。
A pattern is formed by a plurality of secondary luminous fluxes obtained by condensing a plurality of primary luminous fluxes respectively emitted from a plurality of light sources by an optical transmission path and then dividing by the optical transmission path. An illumination optical system for illuminating a plurality of mutually different regions on the mask, and a plurality of projection optical systems arranged corresponding to the plurality of regions, wherein each image of the plurality of regions is In an exposure apparatus that projects onto a photosensitive substrate via each of the projection optical systems,
A plurality of light beam regulating means for regulating each of the primary light beams emitted by the plurality of light sources;
Illuminance detection means for detecting the illuminance of the secondary light beam;
Based on the detection result, a storage unit that stores each of the regulation states by the plurality of light beam regulation units and the illuminance of the plurality of secondary light beams in association with each other,
Based on the storage result stored in the storage means, the primary light source emitting an arbitrary light beam component in the secondary light beam is emitted such that the illuminance of the secondary light beam becomes a predetermined value. An exposure apparatus comprising: a control unit that controls the light beam regulating unit so as to regulate the light beam .
前記光伝送路は、複数の光フアイバを束ねて構成されていることを特徴とする請求項1に記載の露光装置。The exposure apparatus according to claim 1, wherein the optical transmission path is configured by bundling a plurality of optical fibers. 前記光束規制手段は、前記1次光束を通過させる開口部の開口率を制御して、前記1次光束を規制することを特徴とする請求項1に記載の露光装置。2. The exposure apparatus according to claim 1, wherein the light flux regulating unit regulates the primary light flux by controlling an aperture ratio of an opening through which the primary light flux passes. 3. 前記複数の投影光学系の一部は、光軸が第1の方向に沿つて一列に配置されており、
前記複数の投影光学系の他の一部は、光軸が前記複数の投影光学系の一部と平行に、かつ所定間隔をおいて一列に配置されており、
前記第1の方向とほぼ直交し、且つ前記感光基板の面内方向に前記マスクと前記感光基板とを同期して走査することを特徴とする請求項1に記載の露光装置。
Some of the plurality of projection optical systems have their optical axes arranged in a line along a first direction,
Another part of the plurality of projection optical systems, the optical axis is parallel to a part of the plurality of projection optical systems, and are arranged in a row at a predetermined interval,
2. The exposure apparatus according to claim 1, wherein the mask and the photosensitive substrate are synchronously scanned in a direction substantially perpendicular to the first direction and in an in-plane direction of the photosensitive substrate.
第1及び第2の光源からそれぞれ射出された1次光束を光伝送路によつて集光した後に前記光伝送路によつて分割して得た第1及び第2の2次光束によつて、パターンが形成されたマスク上の互いに異なる第1及び第2の領域をそれぞれ照明し、該第1及び第2の領域のそれぞれの像を第1及び第2の投影光学系をそれぞれ介して感光基板上に投影する露光方法において、
前記第1の光源から射出された前記1次光束を規制する第1の光束規制手段による該1次光束に対する規制状態毎に、前記第1及び第2の2次光束の照度を検出する第1の処理と、
前記第2の光源から射出された前記1次光束を規制する第2の光束規制手段による該1次光束に対する規制状態毎に、前記第1及び第2の2次光束の照度を検出する第2の処理と、
前記第1及び第2の処理による検出結果に基づいて、前記第1及び第2の光束規制手段によるそれぞれの前記規制状態と、前記第1及び第2の2次光束の照度とを対応付けて記憶する第3の処理と、
前記パターンを前記感光基板上に投影する際に、前記第1及び第2の2次光束の照度を均一にするよう、前記第3の処理による記憶結果に基づいて、前記第1及び第2の光束規制手段を制御する第4の処理とを具えることを特徴とする露光方法。
First light beams emitted from the first and second light sources, respectively, are condensed by an optical transmission line and then divided by the optical transmission line to obtain first and second secondary light beams. Illuminating different first and second areas on the mask on which the pattern is formed, respectively, and exposing the respective images of the first and second areas via the first and second projection optical systems, respectively. In an exposure method for projecting onto a substrate,
A first detecting unit that detects the illuminance of the first and second secondary light beams for each state of the primary light beam regulated by the first light beam regulating unit that regulates the primary light beam emitted from the first light source; Processing and
A second detecting means for detecting the illuminance of the first and second secondary light fluxes for each of the regulation states of the primary light flux by the second light flux regulating means for regulating the primary light flux emitted from the second light source; Processing and
Based on the detection results obtained by the first and second processes, the respective restriction states by the first and second light beam restriction means are associated with the illuminance of the first and second secondary light beams. A third process for storing;
When projecting the pattern onto the photosensitive substrate, the first and second secondary light beams are made uniform based on the storage result of the third processing so as to make the illuminance of the first and second secondary light beams uniform. A fourth process for controlling the light beam regulating means.
JP08580996A 1996-03-14 1996-03-14 Exposure apparatus and exposure method Expired - Fee Related JP3601174B2 (en)

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