JP3598267B2 - Image display device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an image display device, and in particular, is formed from a lower electrode, an upper electrode, and an electron acceleration layer sandwiched between the lower electrode and the upper electrode, and applies a voltage between the lower electrode and the upper electrode. The present invention relates to an image display device having an electron source substrate on which a thin-film electron source that emits electrons from the upper electrode side when applied is formed in an array, and a fluorescent display panel.
[0002]
[Prior art]
A thin-film electron source is based on a three-layer thin film structure consisting of an upper electrode, an electron acceleration layer, and a lower electrode. A voltage is applied between the upper electrode and the lower electrode, and electrons are emitted from the surface of the upper electrode into a vacuum. It is to let.
For example, an MIM (Metal-Insulator-Metal) type in which a metal-insulator-metal is laminated, an MIS (Metal-Insulator-Semiconductor) type in which a metal-insulator-semiconductor is laminated, and the like are known.
The MIM type thin film type electron source is described in, for example, JP-A-7-65710.
Hereinafter, the operating principle of the thin-film electron source will be described using the MIM thin-film electron source as an example.
[0003]
FIG. 20 is a diagram for explaining the operation principle of the MIM type thin film type electron source.
When a driving voltage Vd is applied between the upper electrode 13 and the lower electrode 11 to make the electric field in the insulating layer 12 about 1 to 10 MV / cm, electrons near the Fermi level in the lower electrode 11 are tunneled. The electrons pass through the barrier and are injected into the conduction bands of the insulating layer 12 and the upper electrode 13 to become hot electrons.
These hot electrons are scattered in the upper electrode 13 in the insulating layer 12 and lose energy, but some hot electrons having energy equal to or more than the work function φ of the upper electrode 13 are emitted into the vacuum 20.
When the plurality of upper electrodes 13 and the plurality of lower electrodes 11 are orthogonal to each other and the thin-film type electron source as described above is formed in a matrix, an electron beam can be generated from any place. It can be used for an electron source such as a display device.
Until now, gold (Au) -aluminum oxide (Al ₂ O ₃ 2.) Electron emission has been observed from a metal-insulator-metal (MIM) structure having an aluminum (Al) structure.
[0004]
[Problems to be solved by the invention]
In a flat-panel image display device including an electron source plate in which thin-film electron sources that emit electrons are formed in an array and a fluorescent display panel having a phosphor screen, the display panel interval between the electron source plate and the fluorescent display plate is several. mm.
Further, in order to cause the phosphor to emit light, a high voltage of several hundred V to several kV is applied to the phosphor screen.
Therefore, there is a problem that a high electric field is generated in a narrow interval between display panels in the image display device, and discharge is likely to occur.
In particular, when a spacer for supporting the interval between display panels of the image display device is provided, creeping discharge via the spacer surface is likely to occur.
One of the causes of the discharge is local charging in the display panel due to electrons or ions generated by electron beam irradiation, and thus it is necessary to eliminate the charging in the display panel.
[0005]
The present inventors have proposed image display devices using the above-described thin-film electron source, but in these proposed image display devices, in order to protect the thin-film electron source from mechanical stress of the spacer. The portion of the thin film type electron source other than the electron emitting portion is protected by an insulating film.
Furthermore, since a thin-film electron source usually does not require a focusing electrode, even if a part of an upper electrode is formed on an insulating film, for example, this electrode is not used and a floating state (or a floating state) is formed. ), The surface of the electron source plate is easily charged, and there is a problem that discharge is likely to occur.
[0006]
SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the related art, and an object of the present invention is to prevent discharge in a display panel in an image display device having a display panel with a narrow panel interval. It is to provide a technology that makes it possible.
Another object of the present invention is to provide an image display device including an electron source plate having a plurality of thin-film electron sources for emitting electrons and a second substrate having a phosphor, wherein the electron beam diverges or converges. It is an object of the present invention to provide a technology that can be used.
The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
[0007]
[Means for Solving the Problems]
The following is a brief description of an outline of typical inventions disclosed in the present application.
That is, the present invention includes a lower electrode, an upper electrode, and an electron acceleration layer sandwiched between the lower electrode and the upper electrode, and applying a voltage between the lower electrode and the upper electrode. A first substrate having a plurality of thin-film electron sources for emitting electrons from the upper electrode side, a frame member, and a second substrate having a phosphor, wherein the first substrate, the frame member And a space surrounded by the second substrate and a vacuum atmosphere, wherein the first substrate is provided on each of the thin-film electron sources on an electron-emitting portion of each of the thin-film electron sources. And an electrode provided at a portion other than the above, and an arbitrary voltage is applied to the electrode.
[0008]
In a preferred embodiment of the present invention, the voltage applied to the electrode is adjustable.
In a preferred embodiment of the present invention, a ground voltage is applied to the electrode.
In a preferred embodiment of the present invention, the electrode is made of the same material as the upper electrode.
Further, in a preferred embodiment of the present invention, the electrode is formed of a laminated film of a first conductive film and a second conductive film, and the second conductive film is formed of the first conductive film and the second conductive film. The conductive film is located on the second substrate side, and the second conductive film is formed of the same material as the upper electrode.
[0009]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and repeated description thereof will be omitted.
FIG. 1 is a sectional view showing an image display device according to an embodiment of the present invention.
An image display device according to an embodiment of the present invention includes an electron source plate (first substrate of the present invention) having MIM type thin-film electron sources arranged in a matrix and a fluorescent display plate (phosphor) having a phosphor. (Second substrate of the present invention), wherein the space between the electron source plate and the display plate is in a vacuum atmosphere.
<< Method of Making Thin-Film Electron Source of Present Embodiment >>
First, a method for producing a thin-film electron source according to an embodiment of the present invention will be described with reference to FIGS.
2A to 13, FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view showing a cross-sectional structure taken along the line AA ′ shown in FIG. (C) is a cross-sectional view showing a cross-sectional structure along the line BB ′ shown in FIG.
[0010]
First, a metal film for a lower electrode is formed on an insulating substrate 10 such as glass.
Aluminum (Al; hereinafter, referred to as Al) or an Al alloy is used as the lower electrode material.
Here, an Al—Nd alloy doped with 2 atomic% of neodymium (Nd; hereinafter, referred to as Nd) was used.
For the film formation, for example, a sputtering method was used, and the film thickness was 300 nm.
After the film formation, a stripe-shaped lower electrode 11 was formed as shown in FIG. 2 by a photo process and an etching process.
For the etching, for example, wet etching with a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid is used.
[0011]
Next, the protective insulating layer 14 and the insulating layer 12 are formed.
First, a portion serving as an electron emission portion on the lower electrode 11 is masked with a resist film 19, and the other portion is selectively anodized thickly to form a protective insulating layer 14 as shown in FIG.
If the formation voltage is 100 V, the protective insulating layer 14 having a thickness of about 136 nm is formed.
Next, the resist film 19 is removed, and the surface of the remaining lower electrode 11 is anodized to form an insulating layer 12 on the lower electrode 11 as shown in FIG.
For example, if the formation voltage is 6 V, an insulating layer 12 having a thickness of about 10 nm is formed on the lower electrode 11.
[0012]
Next, as shown in FIG. 5, an upper bus electrode film serving as a power supply line to the upper electrode 13 is formed by, for example, a sputtering method.
Here, a laminated film is used as the upper bus electrode film, and tungsten (W; hereinafter, referred to as W) is used as a material of the upper bus electrode lower layer 15, and an Al—Nd alloy is used as a material of the upper bus electrode upper layer 16, for example. Was used.
The thickness of the upper bus electrode lower layer 15 is reduced to several nm to several tens nm so that the upper electrode 13 to be formed later is not disconnected due to a step of the upper bus electrode lower layer 15. Was formed as thick as about several 100 nm in order to make the film thickness sufficient and to use it as a stopper film when etching an interlayer insulating film to be formed later.
Subsequently, as shown in FIG. 6, the upper bus electrode upper layer film 16 and the upper bus electrode lower layer 15 are processed so as to be orthogonal to the lower electrode 11 by a photo process and an etching process.
The etching is performed, for example, by wet etching in a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid on the Al-Nd alloy on the upper layer of the upper bus electrode, and wet etching in a mixed aqueous solution of ammonia and hydrogen peroxide on W of the lower layer on the upper bus electrode. Etching or the like is used.
[0013]
Next, as shown in FIG. 7, an insulating film to be the interlayer insulating film 17 is formed.
As the interlayer insulating film 17, for example, a film generally used as an insulating film in a semiconductor device or the like can be used.
That is, as materials, SiO, SiO ₂ , Glass such as phosphosilicate glass, borosilicate glass, Si ₃ N ₄ , Al ₂ O ₃ , Polyimide and the like can be used.
As a film formation method, a sputtering film, a vacuum evaporation film, a chemical vapor deposition film, a coating method, or the like can be used.
For example, SiO ₂ , Al ₂ O ₃ , Si ₃ N ₄ For example, a sputtering method or a chemical vapor deposition method can be used for film formation, and a vacuum evaporation method, a glass such as phosphosilicate glass or borosilicate glass, or a coating method for polyimide can be used for SiO film formation.
Here, the Si film formed by the sputtering method is used. ₃ N ₄ A film was used and its thickness was increased to, for example, about 0.3 to 1 μm.
[0014]
Subsequently, a region including an electron emission portion is opened in the interlayer insulating film 17 by a photo process and an etching process, as shown in FIG.
This processing is performed by, for example, CF ₄ May be used as a dry etching method. CF ₄ In the dry etching method using a fluoride-based etching gas such as, for example, the insulator of the interlayer insulating film 17 is etched at a high selectivity with respect to the Al alloy of the upper electrode upper layer 16. Only the insulating film 17 can be processed.
Subsequently, the upper layer 16 of the upper bus electrode of the electron emission portion is wet-etched in a mixed aqueous solution of phosphoric acid, acetic acid and nitric acid.
This etching etches the Al alloy, but hardly etches the insulator used for the interlayer insulating film 17 and the W of the upper bus electrode lower layer 15.
[0015]
Therefore, only the upper layer 16 of the upper bus electrode is etched with a high selectivity.
Therefore, as shown in FIG. 9, upper bus electrode upper layer 16 recedes inward with respect to interlayer insulating film 17, and interlayer insulating film 17 having an eaves-shaped opening is formed.
Next, W of the upper bus electrode lower layer 15 is etched by a photo process and an etching process to open an electron emission portion as shown in FIG.
At this time, by processing so that W of the upper bus electrode lower layer 15 extends to the electron emission portion side from the upper bus electrode upper layer 16 and the interlayer insulating film 17, it is possible to make contact with the upper electrode 13 formed later. it can.
For the etching, for example, a mixed aqueous solution of ammonia and hydrogen peroxide may be used.
[0016]
Finally, an upper electrode film is formed.
As a film forming method, for example, a sputter film is used.
As the upper electrode 13, for example, a laminated film of iridium (Ir), platinum (Pt), and gold (Au) is used, and the film thickness is several nm. Here, it was set to 4 nm.
As shown in FIG. 11, the formed thin upper electrode 13 is cut by an eave-shaped step at the opening of the interlayer insulating film 17 to be separated for each electron source, and the upper bus electrode upper layer 16 and the interlayer A structure is provided in which power is supplied by contact with W of the upper bus electrode lower layer 15 extending from the insulating film 17 to the electron emission portion side.
Further, as shown in FIG. 11, a third electrode (electrode of the present invention) 18 of the same material as the upper electrode material is formed on the interlayer insulating film 17.
FIG. 12 shows an electron source plate having 3 × 3 thin-film electron sources prepared in this manner.
[0017]
In the structure of the present embodiment, the third electrode 18 has the same thickness as the thin upper electrode 13 and has a high sheet resistance, and unexpected disconnection may occur.
In such a case, as shown in FIG. 13, the third electrode 18 may have a stacked structure of the first conductive film and the second conductive film, and may be thicker.
As a manufacturing method in this case, a metal film (first conductive film) is formed successively after the formation of the interlayer insulating film 17.
At this time, a material that can be etched simultaneously with the interlayer insulating film 17 is preferably selected.
For example, Si ₃ N ₄ When the interlayer insulating film 17 is used, if the metal film is made of W, molybdenum (Mo), titanium (Ti) or the like, CF is used. ₄ The metal film and the interlayer insulating film 17 can be etched at the same time by a dry etching method using, so that an increase in steps can be avoided.
[0018]
Although the structure of the metal-insulator-metal (MIM) thin-film electron source according to the present embodiment has been described above, a thin-film electron source having another structure, for example, a MOS-type (metal-oxide-semiconductor) is described. ), MIS type (metal-insulator-semiconductor), HEED type (high-efficiency-electro-emission device, Jpn. J. Appl. Phys., Vol. 36, pL939, etc.), EL type, etc. 63, 6, 592, etc.) or a thin-film type electron source such as a porous silicon type (described in Applied Physics, Vol. 66, No. 5, pp. 437) as in the present invention. Has a third electrode 18 It can be applied to the concrete.
[0019]
Next, a description will be given of a method of forming the image display device of the present embodiment by bonding the thin film type electron source substrate and the fluorescent display plate formed by the above-described method via a spacer.
14A and 14B are diagrams for explaining the fluorescent display panel of the image display device according to the present embodiment, wherein FIG. 14A is a plan view, and FIG. FIG. 4C is a cross-sectional view showing a cross-sectional structure taken along the line A ′, and FIG. 4C is a cross-sectional view showing a cross-sectional structure taken along the line BB ′ shown in FIG.
1, 12, 15, and 16, the upper bus electrode includes an upper bus electrode lower layer 15 and an upper bus electrode upper layer 16 collectively for simplification of the drawings.
The fluorescent display panel is created as follows.
First, a black matrix 120 is formed over a substrate 110 such as a light-transmitting glass for the purpose of improving the contrast of an image display device.
The black matrix 120 is formed by applying a solution in which PVA (polyvinyl alcohol) and ammonium dichromate are mixed to the substrate 110, exposing the portion other than the portion where the black matrix 120 is desired to be irradiated with ultraviolet rays, and then exposing the unexposed portion. It is formed by applying a solution in which graphite powder is dissolved and removing PVA by lift-off.
[0020]
Next, the red phosphor 111 is formed.
After applying an aqueous solution in which PVA (polyvinyl alcohol) and ammonium dichromate are mixed to the phosphor particles on the face plate 110, a portion where the phosphor is to be formed is irradiated with ultraviolet rays to be exposed, and then the unexposed portion is flushed with running water. To remove.
Thus, the red phosphor 111 is patterned.
The pattern is patterned into a stripe as shown in FIG.
Similarly, a green phosphor 112 and a blue phosphor 113 are formed.
As a phosphor, for example, red ₂ O ₂ S: Eu (P22-R), ZnS: Cu, Al (P22-G) for green, and ZnS: Ag, Cl (P22-B) for blue may be used.
Next, after filming with a film such as nitrocellulose, Al is deposited on the entire substrate 110 to a thickness of about 75 nm to form a metal back film 114.
This metal back film 114 functions as an acceleration electrode.
Thereafter, the substrate 110 is heated to about 400 ° C. in the air to thermally decompose an organic substance such as a filming film or PVA.
Thus, the fluorescent display panel shown in FIG. 14 is completed.
[0021]
The thus-produced fluorescent display plate and the electron source plate are sealed with the surrounding frame member 116 using the frit glass 115 via the spacer 30 as shown in FIG.
Note that FIG. 15 is a cross-sectional view showing a cross-sectional structure of the bonded display panel. FIG. 15A shows a portion corresponding to the cross-sectional structure taken along the line AA ′ shown in FIGS. 12A is a cross-sectional view of a portion corresponding to a cross-sectional structure taken along the line BB ′ shown in FIGS. 12 and 14.
Here, the height of the spacer 30 is set so that the distance between the substrate 110 and the substrate 10 is about 1 to 3 mm.
The spacer 30 is set up on the interlayer insulating film 17 covered with the film of the upper electrode 13 or the third electrode film 18 composed of a laminated film of the metal film and the upper electrode 13.
Here, for the sake of explanation, the spacers 30 are all set up for each dot that emits light in R (red), G (green), and B (blue). However, in practice, the number of spacers 30 (density) is limited as long as the mechanical strength can withstand. ) Can be reduced and set about every 1 cm.
[0022]
10 sealed display panels ^-7 After evacuating to a vacuum of about Torr and sealing, after the sealing, the getter is activated and the vacuum in the display panel is maintained.
For example, in the case of a getter material containing barium (Ba) as a main component, a getter film can be formed by high-frequency induction heating or the like.
Further, a non-evaporable getter containing zirconium (Zr) as a main component may be used.
As described above, in the present embodiment, since the distance between the substrate 110 and the substrate 10 is as long as about 1 to 3 mm, the acceleration voltage applied to the metal back film 114 can be as high as 3 to 6 KV.
Therefore, as described above, a phosphor for a cathode ray tube (CRT) can be used as the phosphor.
[0023]
As described above, FIG. 1 is a cross-sectional view illustrating the image display device of the present embodiment, and FIG. 1 is a cross-sectional view of a portion corresponding to a cross-sectional structure taken along line BB ′ shown in FIGS. It is sectional drawing.
As shown in FIG. 1, the third electrode 18 is grounded or connected to an external circuit 70 capable of generating any positive or negative voltage, and the voltage applied to the third electrode is adjusted from the outside. It is possible.
Here, as the external circuit 70, for example, as shown in FIG. _CC And negative voltage V _EE , The volume of the variable resistor can be rotated to generate any positive or negative voltage.
Accordingly, an arbitrary positive or negative voltage is applied to the third electrode and an arbitrary voltage is applied to the third electrode. Therefore, during the image display in which a high voltage is applied to the phosphor screen, the charge generated in the display panel is displayed. Even if the particles enter the electron source substrate surface, no charge is generated on the electron source substrate surface.
In addition, since the spacer 30 is set up on the third electrode 18, the third electrode 18 also absorbs the electric charge charged on the spacer 30, and can prevent creeping discharge via the spacer 30.
As a result, discharge in the display panel can be prevented, and a drive circuit for driving the thin-film electron source can be protected.
[0024]
FIG. 16 is a schematic diagram showing a state where a drive circuit is connected to the image display device of the present embodiment.
The lower electrode 11 is connected to a lower electrode drive circuit 40, and the upper bus electrode upper layer 16 is connected to an upper electrode drive circuit 50.
Here, the intersection of the Km-th lower electrode 11 and the Cn-th upper bus electrode 16 is represented by (m, n).
Further, an acceleration voltage of about 3 to 6 KV is constantly applied to the metal back film 114 from the acceleration voltage source 60.
Further, as described above, the third electrode 18 is grounded or connected to a circuit 70 to which positive and negative voltages can be applied.
FIG. 17 is a timing chart showing an example of the waveform of the drive voltage output from each drive circuit shown in FIG.
At time t0, since no voltage is applied to any of the electrodes, no electrons are emitted, and thus the phosphor does not emit light.
At time t1, a voltage of -V1 is applied to the K1th lower electrode 11, and a voltage of + V2 is applied to the C1th and C2th upper bus electrode upper layers 16.
Since a voltage of (V1 + V2) is applied between the lower electrode 11 and the upper electrode 13 at the intersections (1,1) and (1,2), (V1 + V2) is set to be equal to or higher than the electron emission start voltage. In other words, electrons are emitted into a vacuum from the thin-film electron source at the intersection of the two.
[0025]
The emitted electrons are accelerated by an acceleration voltage applied to the metal back film 114, and then enter the phosphor to emit light.
At time t2, when the voltage -V1 of the K2th lower electrode 11 is applied and the voltage V2 is applied to the C1th upper bus electrode upper layer 16, the intersection (2, 1) is similarly turned on.
Thus, a desired image or information can be displayed by changing a signal applied to the upper layer 16 of the upper bus electrode.
Also, by appropriately changing the magnitude of the voltage V1 applied to the upper layer 16 of the upper bus electrode, an image with gradation can be displayed.
In this case, the application of the inversion voltage for releasing the charges accumulated in the insulating layer 12 is performed by applying a voltage of −V1 to all the lower electrodes 11, then applying a voltage of V3 to all the lower electrodes 11, and applying a voltage of all the upper bus electrodes. This was performed by applying a voltage of −V3 ′ to the upper layer 16.
[0026]
Here, another role of the third electrode 18 will be described.
As described above, the third electrode 18 to which any positive or negative voltage is applied prevents discharge in the display panel. However, the following effects can be obtained by the voltage applied to the third electrode 18. It is possible.
When a positive voltage is applied from the external circuit 70 to the third electrode 18 with respect to the upper electrode 13 of the thin film type electron source, the electron beam from the thin film type electron source can be diverged as shown in FIG. it can.
Therefore, when a small thin-film electron source is used for the width of the fluorescent screen, a positive voltage must be applied from the external circuit 70 to the third electrode 18 to the upper electrode 13 of the thin-film electron source. Thereby, the fluorescent screen can be effectively used.
18 and 19, the electron source plate is a cross-sectional view of a portion corresponding to a cross-sectional structure taken along the line AA ′ shown in FIGS. 12 and 14, and the fluorescent display plate is shown in FIGS. FIG. 15 is a cross-sectional view of a portion corresponding to a cross-sectional structure taken along the line BB ′ of FIG. 14.
[0027]
Generally, in a flat-panel image display device using a thin-film electron source, the voltage that can be applied to the phosphor screen is as low as several kV to prevent discharge, as compared with 20 to 30 kV of a cathode ray tube.
Therefore, in order to obtain the same brightness as that of a cathode-ray tube, the phosphor screen must be irradiated with an electron beam having a higher current density, and the life characteristics of the phosphor are generally inferior to those of the cathode-ray tube.
Since thin-film electron sources generally have excellent electron beam straightness, when a small electron source is formed compared to the color spacing of the phosphor screen, only a specific part of the phosphor screen is irradiated with an electron beam, and the life characteristics of the phosphor are reduced. May deteriorate.
Therefore, when a minute electron source is used, a positive voltage is applied from the external circuit 70 to the third electrode 18 with respect to the upper electrode 13 of the thin film type electron source to diverge the electron beam, and the entire fluorescent screen is By effectively utilizing the area, the life of the phosphor can be extended.
[0028]
Conversely, when a negative voltage is applied from the external circuit 70 to the third electrode 18 with respect to the upper electrode 13 of the thin-film electron source, the electron beam can be converged as shown in FIG.
This makes it possible to prevent color mixing when the distance between the thin-film electron source and the phosphor screen is set wide to prevent discharge.
That is, in order to prevent discharge, it is effective to increase the distance between display panels of the image display device and reduce the electric field strength. However, if the distance between display panels is increased, the emission of the electron beam causes the phosphor of another adjacent color to emit. Also, the color mixture occurs by irradiating the electron beam at the same time.
Usually, the display panel interval is set in a range in which the color mixing does not occur. However, when the interval between the thin film type electron source and the phosphor screen is set wide to prevent discharge, color mixing occurs for the above-described reason. .
[0029]
A thin-film electron source generally has a good straightness of an electron beam and usually does not require convergence of the electron beam. When a negative voltage is applied to the upper electrode 13, the electron beam can be converged (a so-called convergence mechanism), and color mixing can be prevented.
As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and can be variously modified without departing from the gist of the invention. Needless to say,
[0030]
【The invention's effect】
The following is a brief description of an effect obtained by a representative one of the inventions disclosed in the present application.
(1) According to the image display device of the present invention, charging in the display panel can be prevented, and discharge in the display panel can be prevented.
(2) According to the image display device of the present invention, it is possible to converge or diverge the electron beam from the thin film type electron source.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating an image display device according to an embodiment of the present invention.
FIG. 2 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 3 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 4 is a diagram for explaining a method for producing a thin-film electron source according to an embodiment of the present invention.
FIG. 5 is a diagram for explaining a method for producing a thin-film electron source according to an embodiment of the present invention.
FIG. 6 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 7 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 8 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 9 is a diagram for explaining a method for producing a thin-film electron source according to an embodiment of the present invention.
FIG. 10 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 11 is a diagram for explaining a method of producing a thin-film electron source according to an embodiment of the present invention.
FIG. 12 is a view showing an electron source plate according to an embodiment of the present invention having 3 × 3 thin-film electron sources formed by the method of FIGS. 2 to 11;
FIG. 13 is a diagram for explaining a method of forming another example of the thin-film electron source according to the embodiment of the present invention.
FIG. 14 is a diagram illustrating a fluorescent display panel according to an embodiment of the present invention.
FIG. 15 is a cross-sectional view showing a cross-sectional structure of a display panel attached to the display panel.
FIG. 16 is a schematic diagram illustrating a state where a driving circuit is connected to the image display device according to the embodiment of the present invention.
17 is a timing chart illustrating an example of a waveform of a driving voltage output from each driving circuit illustrated in FIG.
FIG. 18 is a diagram for explaining the effect of the third electrode of the thin-film electron source according to the embodiment of the present invention.
FIG. 19 is a diagram for explaining the effect of the third electrode of the thin-film electron source according to the embodiment of the present invention.
FIG. 20 is a diagram for explaining the operation principle of the MIM type thin film electron source.
[Explanation of symbols]
Reference numerals 10, 110: substrate, 11: lower electrode, 12: insulating layer, 13: upper electrode, 14: protective insulating layer, 15: upper bus electrode lower layer, 16: upper bus electrode upper layer, 17: interlayer insulating film (passivation film) , 18: third electrode, 19: resist film, 20: vacuum, 30: spacer, 40: lower electrode drive circuit, 50: upper electrode drive circuit, 60: acceleration voltage source, 70: external circuit, 111: red fluorescence Body: 112: green phosphor, 113: blue phosphor, 114: metal back film, 115: frit glass, 116: frame member, 120: black matrix.

Claims (5)

A lower electrode, an upper electrode, and an electron accelerating layer sandwiched between the lower electrode and the upper electrode, and by applying a voltage between the lower electrode and the upper electrode, A first substrate having a plurality of thin-film electron sources for emitting electrons from;
A frame member;
A second substrate having a phosphor,
An image display device in which a space surrounded by the first substrate, the frame member, and the second substrate is a vacuum atmosphere,
The first substrate is provided on each of the thin-film electron sources on an interlayer insulating film covering each of the thin-film electron sources in a self-aligned manner with an eaves-shaped step of an opening of the interlayer insulating film. Having an electrode that is separated and cut into
An image display device, wherein an arbitrary voltage is applied to the electrode. The image display device according to claim 1, wherein a voltage applied to the electrode is adjustable. The image display device according to claim 1, wherein a ground voltage is applied to the electrode. The image display device according to claim 1, wherein the electrode is made of the same material as the upper electrode. The electrode is formed of a stacked film of a first conductive film and a second conductive film, and the first conductive film and the second conductive film are formed of the first conductive film and the second conductive film. 4. The method according to claim 1, wherein the second conductive film is located on the second substrate side, and the second conductive film is formed of the same material as the upper electrode. Item 2. The image display device according to item 1.

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