JP3557128B2 - Method for manufacturing semiconductor device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a process for producing a semiconductor equipment to be used for non-contact IC card or the like.
[0002]
[Prior art]
As shown in FIG. 14, the non-contact type IC card has an antenna 10 formed in a coil shape, and a semiconductor element 12 for signal transmission / reception connected to the antenna 10 sandwiched by a film 14 formed in a card shape to form a thin card body. It was formed.
The antenna 10 is formed into a predetermined coil shape by etching a conductor layer formed on the surface of an electrically insulating film or pressing a thin metal plate. The semiconductor element 12 and the antenna 10 are electrically connected by wire bonding.
[0003]
[Problems to be solved by the invention]
In a conventional non-contact IC card, as shown in FIG. 14, the antenna 10 is arranged along the vicinity of the outer periphery of the card. This is because the communication area of the antenna 10 is determined by the area surrounded by the loop of the antenna and the number of windings of the antenna, so that a large area surrounded by the antenna 10 can be ensured.
The shape of the card type IC card is considered in consideration of the convenience of carrying and the like. However, securing a large area for arranging the antenna 10 as described above restricts miniaturization of the electronic device and restricts application to other uses.
[0004]
The present invention, in view of the characteristics of the electronic component having such a communication function, can easily reduce the size of the electronic component having the communication function, and can easily be applied to various electronic devices. and to provide a suitable manufacturing method of the semiconductor equipment.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention has the following configuration.
That is, a method of manufacturing a semiconductor equipment according to claim 1, wherein, when manufacturing a semiconductor device which is joined the antenna substrate and the semiconductor element antenna pattern for signal transfer is formed is electrically connected, wherein On a first wafer on which semiconductor elements are formed in a predetermined arrangement, only an antenna forming area having the same shape as the planar shape of the semiconductor element is formed in the same arrangement as the predetermined arrangement of the semiconductor elements, and an antenna for signal transmission and reception is formed in the antenna forming area. An electrode formed on each semiconductor element is placed on a second wafer having an antenna pattern acting thereon as a semiconductor wafer, with the surface on which the electrode terminals of the semiconductor element are formed and the surface on which the antenna pattern is formed facing each other. After the terminal and the antenna pattern formed in each antenna formation region were electrically connected and joined, the first wafer and the second wafer were joined. Was cut with condition, characterized in that said antenna antenna substrate pattern is formed and the semiconductor element to obtain a semiconductor device electrically connected to and joined pieces.
Here, the bonding between the semiconductor element and the antenna substrate may be performed using an anisotropic conductive adhesive film or an anisotropic conductive adhesive, or may be performed using a resin material.
Alternatively, a structure in which the semiconductor element and the antenna substrate are joined by ultrasonic bonding between the electrode terminal and the antenna pattern may be employed.
In this manner, the semiconductor device can be protected by covering the back surface of the electrically bonded semiconductor element and the antenna substrate with the sealing resin.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same components as those in the conventional example are denoted by the same reference numerals, and detailed description thereof will be omitted.
The basic structure of a semiconductor device is a structure in which a semiconductor element and an antenna formed in substantially the same shape as the planar shape of the semiconductor element are electrically connected and joined to the semiconductor element and the antenna.
[0007]
First, the structure of an antenna substrate 20 used when manufacturing a semiconductor device will be described with reference to FIG.
The antenna substrate 20 is formed by cutting a plate material of the same material as the semiconductor element 12 (generally, since the semiconductor element 12 is manufactured from a silicon wafer, a silicon wafer) into individual pieces, and having a size substantially the same as the planar shape of the semiconductor element 12. The antenna has a structure in which an antenna pattern 24 acting as an antenna is formed on one surface (the upper surface in FIG. 1) of the substrate 22 formed as described above. The antenna pattern 24 is formed in a coil shape using the entire area of the surface of the substrate 22 in order to obtain good communication characteristics even in a small area of a chip size. The number of turns, pattern width, pattern arrangement, and the like of the antenna pattern 24 formed on the surface of the substrate 22 can be arbitrarily selected.
In particular, when the line width of the antenna pattern 24 is formed to be narrow, if pad portions 24a for electrical connection with the semiconductor element 12 are formed at both ends of the antenna pattern 24, positioning can be achieved. This is preferable because the connection can be easily performed and a reliable connection can be easily performed.
[0008]
Here, the method of forming the antenna pattern 24 is to form a metal layer by, for example, sputtering or electroless metal plating or pasting a metal foil on one surface of the substrate 22, and apply a photosensitive resist to the surface of the metal layer. Then, a resist pattern covering the portion left as the antenna pattern 24 after exposure and development is formed, and the portion of the metal layer exposed from the resist pattern is removed by etching, whereby the antenna pattern 24 is obtained. It is also possible to form the antenna pattern 24 by directly forming a metal layer on the surface of the one surface of the substrate 22 to be the antenna pattern 24 by sputtering.
[0009]
On the active element surface A of the semiconductor element 12 shown in FIG. 2, bumps as electrode terminals 26 correspond to the positions of both ends of the antenna pattern (the pads 24a when the pads 24a are formed). Is formed. Hereinafter, the active element surface A is also referred to as an electrode terminal formation surface. Note that gold is considered as a material of the bump.
[0010]
When the antenna substrate 20 is formed to have substantially the same size as the semiconductor element 12, it is required that the antenna pattern 24 be formed very finely. The method of forming the antenna pattern 24 by an etching method or a sputtering method has an advantage that the antenna pattern 24 can be formed extremely finely and can be easily formed into an arbitrary pattern.
[0011]
In the semiconductor device 28, the antenna substrate 20 and the semiconductor element 12 described above are opposed to each other with the electrode terminal forming surface A of the semiconductor element 12 and the surface (also referred to as an antenna forming surface) B of the antenna substrate 20 on which the antenna pattern 24 is formed. 3, the electrode terminals 26 of the semiconductor element 12 are electrically connected to both ends 24 a of the antenna pattern 24 as shown in FIGS. 4 to 6, and the semiconductor element 12 is connected to the antenna substrate. 20.
Here, as a structure for integrally joining the antenna substrate 20 and the semiconductor element 12 and electrically connecting the electrode terminals 26 of the semiconductor element 12 and both ends 24a of the antenna pattern 24, as shown in FIG. An anisotropic conductive adhesive film 30 (or an anisotropic conductive adhesive) is interposed between the antenna substrate 20 and the semiconductor element 12, and the antenna substrate 20 and the semiconductor element 12 are joined under pressure while being heated. There is a structure.
[0012]
As shown in FIG. 5, a resin material 32 is interposed between the antenna substrate 20 and the semiconductor element 12, and the antenna substrate 20 and the semiconductor element 12 are pressurized while being heated, so that the electrode terminals of the semiconductor element 12 are pressed. There is a structure in which the resin material 32 is cured by making the both ends 26a and the both ends 24a of the antenna pattern 24 electrically contact. In this structure, a force in a direction in which the antenna substrate 20 and the semiconductor element 12 approach each other acts on the antenna substrate 20 and the semiconductor element 12 from the resin material 32 due to the thermal contraction of the resin material 32 at the time of curing. Therefore, it is possible to maintain good electrical connectivity between the electrode terminals 26 of the semiconductor element 12 and both ends 24 a of the antenna pattern 24.
6, both ends 24a of the antenna pattern 24 of the antenna substrate 20 and the electrode terminals 26 of the semiconductor element 12 are electrically connected to each other by direct ultrasonic bonding. There is a structure to join with.
In the above-described embodiment, the electrode terminals 26 on the semiconductor element 12 side are formed on the bumps, and the antenna substrate 20 side is formed on the planar pads. On the contrary, the antenna substrate 20 side is formed on the bumps. Alternatively, the semiconductor element 12 side may be formed on a pad, or both may be formed on a bump.
[0013]
Next, a method for manufacturing the semiconductor device 28 will be described.
In manufacturing the semiconductor device 28, as shown in FIG. 3, a method of bonding the antenna substrate 20 and the semiconductor element 12 once formed individually to each other can be adopted, but the manufacturing method described later is adopted to manufacture the semiconductor device 28. Efficiency can be improved.
The first manufacturing method will be described with reference to FIG.
A wafer 34 on which the semiconductor elements 12 are formed in a predetermined arrangement is prepared.
In addition, according to the above-described method, the antenna element 24 is formed to be smaller than the planar shape of the semiconductor element 12 and the antenna pattern 24 is formed on the substrate 22 made of the same material (usually silicon) as the semiconductor element 12. A substrate 20 is prepared.
[0014]
The antenna substrate 20 is provided on each semiconductor element 12 of the wafer 34, and the surface on which the semiconductor element 12 is formed and the surface on which the antenna pattern 24 of the antenna substrate 20 is formed face each other, and the electrode formed on the semiconductor element 12 is formed. With the terminal 26 and the antenna pattern 24 electrically connected, bonding is performed using any of the bonding methods described above.
Then, when the finished bonded an antenna substrate 20 to all of the semiconductor elements 12, and cutting the U Fine 34, to separate each semiconductor element 12. Thus, in a state where the electrode terminal forming surface A of the semiconductor element 12 and the antenna forming surface B of the antenna substrate 20 face each other, the individual semiconductor device 28 in which the electrode terminal 26 and the antenna pattern 24 are electrically connected is separated. Obtainable.
[0015]
The second manufacturing method will be described with reference to FIG.
In summary, the relationship between the antenna substrate 20 and the semiconductor element 12 is opposite to that of the first manufacturing method.
That is, the antenna forming region C in which the antenna pattern 24 is formed (usually rectangular) is prepared c Fine 36 formed in a predetermined arrangement.
A semiconductor element 12 formed in a smaller piece than the planar shape of the antenna formation region C is prepared.
[0016]
Then, the semiconductor element 12 to each antenna forming region C c Movement 36, a surface on which the antenna pattern 24 is formed of a surface on which the semiconductor element 12 is formed and the antenna region C are opposed, and are formed on the semiconductor element 12 In a state where the electrode terminals 26 and the antenna pattern 24 are electrically connected, bonding is performed using any of the bonding methods described above.
Then, when finished bonding the semiconductor element 12 in all the antenna forming region C, cutting the U Fine 36, the antenna substrate 20 of the pieces. Thus, in a state where the electrode terminal forming surface A of the semiconductor element 12 and the antenna forming surface B of the antenna substrate 20 face each other, the individual semiconductor device 28 in which the electrode terminal 26 and the antenna pattern 24 are electrically connected is separated. Obtainable.
[0017]
The third manufacturing method will be described with reference to FIGS.
The outline is a method in which the semiconductor element 12 and the antenna substrate 20 are respectively formed on separate wafers, and the wafers are joined to each other, and then both wafers are simultaneously cut to obtain individual semiconductor devices 28.
Specifically, a first wafer 34 on which the semiconductor elements 12 are formed in a predetermined arrangement is prepared.
Further, a second wafer 36 is prepared in which an antenna forming area C having the same shape as the planar shape of the semiconductor element 12 is formed in the same arrangement as the predetermined arrangement of the semiconductor element 12, and the antenna pattern 24 is formed in the antenna forming area C.
[0018]
Then, the first wafer 34 and the second wafer 36 are brought close to each other with the electrode terminal forming surface A and the antenna forming surface B of the semiconductor element 12 facing each other, so that each semiconductor element 12 corresponds to each antenna forming area C. The electrode terminals 26 of the respective semiconductor elements 12 and the respective antenna patterns 24 are electrically connected and joined while being positioned as described above.
Then, as shown in FIG. 9, the first wafer 34 and the second wafer 36 are cut into individual pieces in a bonded state.
Thus, the semiconductor device 28 can be manufactured as in the first manufacturing method and the second manufacturing method. In the present manufacturing method, the outer shape of the semiconductor element 12 has the same shape as the outer shape of the antenna substrate 20.
[0019]
In the case of the third manufacturing method, in a state where the first wafer 34 and the second wafer 36 are bonded to each other, the two wafers 34 and 36 or one of the wafers is polished and formed to be thin, so that the entire wafer is formed. The semiconductor device 28 can be thinner.
[0020]
Further, in the first to third manufacturing methods described above, when manufacturing the semiconductor device 28 having the bonding structure shown in FIG. 6, the electrode terminals (gold bumps) 26 of the semiconductor element 12 are connected to the antenna substrate (or individually). After cutting, ultrasonic waves are applied while heating and pressing in contact with the antenna pattern 24 formed on the antenna region 20 serving as an antenna substrate, so that the electrode terminal 26 and both ends 24a of the antenna pattern are connected. I do.
After the ultrasonic bonding, a resin may be filled in a gap between the semiconductor element 12 and the antenna substrate 20 to protect a connection portion.
[0021]
Further, the outer periphery of the manufactured semiconductor device 28 can be covered with a sealing resin 36 as shown in FIG. 10 to protect it. In FIG. 10, the semiconductor device 28 shown in FIG. 5 is covered with the sealing resin 36 as an example, but the present invention can be applied to the semiconductor device 28 shown in FIGS.
In the case of the semiconductor device 28 manufactured by the above-described third manufacturing method, the back surfaces of both the wafers 34 and 36 are covered with the sealing resin 36 in a state where the first wafer 34 and the second wafer 36 are joined. After that, the semiconductor device 28 can be cut into individual pieces to obtain a semiconductor device 28 having a configuration as shown in FIG. In the case of a manufacturing method in which the wafer is formed thin by polishing, the wafer is covered with a sealing resin 36 after the polishing step.
Further, like the semiconductor device 28 manufactured by the first and second manufacturing methods shown in FIG. 7, the antenna substrate 20 or the antenna substrate 20 formed individually on the wafer 36 on which the semiconductor element 12 or the antenna formation region is formed. In a semiconductor device manufactured through the step of bonding the semiconductor elements 12, the back surface of the wafer 36 and the back surface of the semiconductor element 12 or the antenna substrate 20 are covered with the sealing resin 36, and then the wafer 36 is cut. Is also good. In this case, the semiconductor device 28 has a structure shown in FIG. 12, and the semiconductor element 12 or the antenna substrate 20 formed in advance into individual pieces has a structure in which not only the back surface but also the side surfaces are covered with the sealing resin 36.
[0022]
By the way, in the semiconductor device 28, other electronic components such as a capacitor and a resistor may be required as an auxiliary circuit due to the circuit configuration.
However, in each of the above-described embodiments, only the bonding means (anisotropic conductive adhesive film 30 or resin material 32) for bonding both members is interposed between semiconductor element 12 and antenna substrate 20. Alternatively, because of the structure in which nothing is interposed, there is a problem that electronic components forming the auxiliary circuit cannot be integrally mounted on the semiconductor device 28.
In such a case, as shown in FIG. 13, a separate board incorporating the above auxiliary circuit 38 (a wiring pattern electrically connected to the semiconductor element 12 and the antenna board 20 is formed on at least both sides). It is also conceivable to prepare a structure in which a semiconductor element 12 and the antenna substrate 20 are joined by using a resin material 32 via this separate substrate 40. A through hole 42 is formed in another substrate 40, and electrical connection between the semiconductor element 12 and the antenna substrate 20 is achieved. In FIG. 13, the members are joined by using the resin material 32 as an example, but the present invention can also be applied to a case where the members are joined by an anisotropic conductive adhesive film, an anisotropic conductive adhesive, or ultrasonic bonding. It is also possible to adopt a structure in which the auxiliary circuit 38 is formed on the separate substrate 40 itself.
In this case, it is desirable that the material of the separate substrate 40 be selected to be close to the coefficient of thermal expansion of the material of the semiconductor element 12 and the antenna substrate 20. In addition, in order to reduce the size of the semiconductor device 28, it is desirable that the separate substrate 40 be set to have substantially the same size as the semiconductor element 12 and the antenna substrate 20.
[0023]
The semiconductor device according to the present invention has a feature that it is formed to be substantially the same size as the semiconductor element 12 and is formed extremely small as a semiconductor device having an antenna for non-contact communication. Therefore, even when used as a non-contact type IC card, it is not necessary to use a conventional card shape, and it is possible to use a stamp size or a smaller size. Further, by forming the IC as an IC with an antenna incorporated therein, signals can be transmitted and received between the ICs in a non-contact manner. This eliminates the need for wiring for connecting ICs, and develops various applications such as miniaturization of a mounting board on which the IC is mounted.
[0024]
【The invention's effect】
According to the method for manufacturing a semiconductor device according to the present invention, a semiconductor device having an antenna substrate can be easily and efficiently manufactured. Further, since the material of the antenna substrate bonded to the semiconductor element is the same as the material of the semiconductor element, there is an effect that the number of failures due to the difference in thermal expansion coefficient is reduced.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram illustrating a structure of an embodiment of an antenna substrate used for a semiconductor device.
FIG. 2 is an explanatory diagram showing a structure of an embodiment of a semiconductor element used for a semiconductor device.
FIG. 3 is an explanatory diagram for explaining a joint structure between an antenna substrate and a semiconductor element.
FIG. 4 is a cross-sectional view illustrating a structure of one embodiment of a semiconductor device.
FIG. 5 is a cross-sectional view illustrating a structure of another embodiment of a semiconductor device.
FIG. 6 is a cross-sectional view showing a structure of another embodiment of a semiconductor device.
FIG. 7 is an explanatory diagram illustrating a method for manufacturing a semiconductor device.
8 is an explanatory diagram for explaining a manufacturing method of a semiconductor device according to the present invention, the wafer with each other are opposed, is an explanatory diagram showing a step of approaching.
FIG. 9 is an explanatory view showing a step of joining the wafers of FIG. 8 and cutting them into individual pieces to obtain a semiconductor device.
FIG. 10 is an explanatory diagram for describing a configuration of a semiconductor device entirely sealed with a sealing resin.
FIG. 11 is an explanatory diagram for describing a configuration of a semiconductor device in which only a back surface of each of a semiconductor element and an antenna substrate is sealed with a sealing resin.
FIG. 12 is an explanatory diagram illustrating a configuration of a semiconductor device in which one of a back surface and a side surface of a semiconductor element and an antenna substrate is sealed with a sealing resin.
FIG. 13 is an explanatory diagram illustrating a configuration of a semiconductor device in which a separate substrate incorporating an auxiliary circuit is sandwiched between a semiconductor element and an antenna substrate, and the semiconductor element and the antenna substrate are bonded via the separate substrate. It is.
FIG. 14 is an explanatory diagram showing a configuration of a conventional IC card.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Antenna 12 Semiconductor element 20 Antenna board 24 Antenna pattern 24a Both ends (pad part) of antenna pattern
26 electrode terminal 28 semiconductor device 30 anisotropic conductive adhesive film

Claims (4)

When manufacturing a semiconductor device in which an antenna substrate on which an antenna pattern for signal transfer is formed and a semiconductor element are electrically connected and joined,
On the first wafer on which the semiconductor elements are formed in a predetermined arrangement, only an antenna forming area having the same shape as the planar shape of the semiconductor elements is formed in the same arrangement as the predetermined arrangement of the semiconductor elements, and the antenna forming area is used for transmitting and receiving signals. The second wafer on which an antenna pattern acting as an antenna was formed was formed on each semiconductor element with the surface on which the electrode terminals of the semiconductor element were formed and the surface on which the antenna pattern was formed facing each other. After electrically connecting and joining the electrode terminals and the antenna pattern formed in each antenna formation region,
Cutting the first wafer and the second wafer in a bonded state to obtain an individual semiconductor device in which the antenna substrate on which the antenna pattern is formed and the semiconductor element are electrically connected and bonded; A method for manufacturing a semiconductor device. 2. The method according to claim 1, wherein the semiconductor element and the antenna substrate are joined using an anisotropic conductive adhesive film or an anisotropic conductive adhesive. 2. The method according to claim 1, wherein the semiconductor element and the antenna substrate are joined using a resin material. The method according to claim 1, wherein the semiconductor element and the antenna substrate are joined by ultrasonically bonding the electrode terminal and the antenna pattern.

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