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JP3532468B2 - Electrostatic deflector and electrostatic bulkhead manufacturing apparatus - Google Patents

Electrostatic deflector and electrostatic bulkhead manufacturing apparatus

Info

Publication number
JP3532468B2
JP3532468B2 JP23165699A JP23165699A JP3532468B2 JP 3532468 B2 JP3532468 B2 JP 3532468B2 JP 23165699 A JP23165699 A JP 23165699A JP 23165699 A JP23165699 A JP 23165699A JP 3532468 B2 JP3532468 B2 JP 3532468B2
Authority
JP
Japan
Prior art keywords
electrostatic
partition
partition wall
reinforcing
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP23165699A
Other languages
Japanese (ja)
Other versions
JP2001057300A (en
Inventor
博光 井上
正文 本岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23165699A priority Critical patent/JP3532468B2/en
Publication of JP2001057300A publication Critical patent/JP2001057300A/en
Application granted granted Critical
Publication of JP3532468B2 publication Critical patent/JP3532468B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】この発明は、円形加速器や荷
電粒子蓄積リングにおいて、荷電粒子を取り込む入射装
置や荷電粒子の取り出しを行う出射装置に用いられる静
電偏向器に係り、特にその静電隔壁の改良とその製造装
置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic deflector used in an injection device for taking in charged particles or an emitting device for taking out charged particles in a circular accelerator or a charged particle storage ring, and more particularly to an electrostatic partition thereof. The present invention relates to the improvement of and the manufacturing apparatus thereof.

【0002】[0002]

【従来の技術】図7は「第11回加速器科学シンポジウ
ムプロシーディング(1997)p.59−61」に示
された従来の静電偏向器の構成を示す図であり、荷電粒
子軌道に対して垂直な方向の断面をとっている。図にお
いて、91はチタンフォイルからなる陽極であるセプタ
ム電極であり、その厚さは0.1mm程度である。91
aはセプタム電極91の荷電粒子軌道に面した部分であ
る隔壁部、92はセプタム電極91に対向して配置され
た対向電極である陰極であり、93はセプタム電極91
を支持固定するセプタム電極固定枠である。なお、この
構成の静電偏向器を従来例1と称する。
2. Description of the Related Art FIG. 7 is a diagram showing the structure of a conventional electrostatic deflector shown in "11th Accelerator Science Symposium Proceeding (1997) p. It has a vertical cross section. In the figure, 91 is a septum electrode which is an anode made of titanium foil, and its thickness is about 0.1 mm. 91
Reference numeral a is a partition wall portion which is a portion of the septum electrode 91 facing the charged particle orbit, reference numeral 92 is a cathode which is a counter electrode arranged so as to face the septum electrode 91, and 93 is the septum electrode 91.
It is a septum electrode fixing frame for supporting and fixing. The electrostatic deflector having this configuration is referred to as Conventional Example 1.

【0003】次に動作について説明する。図8は従来例
1の静電偏向器を出射装置に使用した場合の荷電粒子の
偏向動作を模式的に表した模式図であり、図9は従来例
1の静電偏向器を入射装置に使用した場合の荷電粒子の
偏向動作を模式的に表した模式図である。図において、
95は加速器(図示省略)内の荷電粒子の加速軌道、9
6は上記加速器外に出射された荷電粒子の出射軌道であ
り、97は上記加速器内に入射される荷電粒子の入射軌
道である。これらの図に沿って動作の説明を行う。
Next, the operation will be described. FIG. 8 is a schematic diagram schematically showing the deflection operation of charged particles when the electrostatic deflector of Conventional Example 1 is used in an emission device, and FIG. 9 is the electrostatic deflector of Conventional Example 1 used in an incident device. It is a schematic diagram which represented typically the deflection | deviation operation | movement of the charged particle when used. In the figure,
Reference numeral 95 is an acceleration trajectory of charged particles in an accelerator (not shown), 9
Reference numeral 6 denotes an emission trajectory of charged particles emitted outside the accelerator, and reference numeral 97 denotes an incidence trajectory of charged particles incident inside the accelerator. The operation will be described with reference to these drawings.

【0004】以下は荷電粒子の符号を正とした場合と
し、符号が負の場合は陰極が陽極に、負が正となる。先
ず、出射装置に使用した場合において陰極92に負の高
電圧を印加し、セプタム電極91を接地する。このと
き、セプタム電極91と陰極92との間に電位差が生
じ、これにより電場が発生する。加速器(図示省略)内
を周回する加速軌道95上の荷電粒子は、図8に示すよ
うに上記電場によりセプタム電極91と陰極92との間
に偏向され、セプタム電極91の隔壁部91aを境に荷
電粒子の出射軌道96に沿って上記加速器から出射す
る。
In the following, it is assumed that the sign of the charged particles is positive, and when the sign is negative, the cathode is the anode and the negative is positive. First, when used in the emission device, a negative high voltage is applied to the cathode 92 and the septum electrode 91 is grounded. At this time, a potential difference is generated between the septum electrode 91 and the cathode 92, which causes an electric field. Charged particles on an acceleration orbit 95 circulating in an accelerator (not shown) are deflected between the septum electrode 91 and the cathode 92 by the electric field as shown in FIG. 8, and are separated by the partition wall 91a of the septum electrode 91. The charged particles are emitted from the accelerator along the emission trajectory 96.

【0005】入射装置に使用した場合においては、上記
出射装置と同様に陰極92に負の高電圧を印加し、セプ
タム電極91を接地してセプタム電極91と陰極92と
の間に電位差を生じさせ、これにより両電極91,92
間に電場を発生させる。セプタム電極91と陰極92と
の間を進行する荷電粒子の入射軌道は図9に示すように
上記電場により偏向されて加速器(図示省略)内を周回
する加速軌道95に入射する。
When it is used as an entrance device, a negative high voltage is applied to the cathode 92, and the septum electrode 91 is grounded to generate a potential difference between the septum electrode 91 and the cathode 92 as in the above-mentioned exit device. , This allows both electrodes 91, 92
Generate an electric field in between. An incident orbit of charged particles traveling between the septum electrode 91 and the cathode 92 is deflected by the electric field as shown in FIG. 9 and is incident on an acceleration orbit 95 circulating in an accelerator (not shown).

【0006】上記動作において、セプタム電極91の隔
壁部91aはセプタム電極91と陰極92との間に発生
する電場によって陰極92側に引き寄せられる方向に電
磁気力を受ける。このとき、チタンフォイルからなるセ
プタム電極91にたるみが生じると荷電粒子の入出射時
に荷電粒子が隔壁部91aに衝突してエネルギーを損失
してしまう。このため、セプタム電極91はたるまない
ように張った状態でセプタム電極固定枠93に支持固定
する。
In the above operation, the partition wall 91a of the septum electrode 91 receives an electromagnetic force in the direction of being attracted to the cathode 92 side by the electric field generated between the septum electrode 91 and the cathode 92. At this time, if the slack is generated in the septum electrode 91 made of titanium foil, the charged particles collide with the partition wall 91a when the charged particles enter and exit to lose energy. Therefore, the septum electrode 91 is supported and fixed to the septum electrode fixing frame 93 while being stretched so as not to sag.

【0007】図10は従来の他の静電偏向器の構成を示
す図であり、荷電粒子軌道に対して垂直な方向の断面を
とっている。図において、91’はタングステンなどの
難加工性の材料からなる陽極であるセプタム電極であ
り、1枚の板材を削り出して厚さの薄い隔壁部91b
と、セプタム電極固定枠93’に支持固定する厚板な部
分を形成している。91bはセプタム電極91’の荷電
粒子軌道に面した部分である隔壁部、92’はセプタム
電極91’に対向して配置された陰極であり、93’は
セプタム電極91’を支持固定するセプタム電極固定枠
である。なお、この構成の静電偏向器を従来例2と称す
る。
FIG. 10 is a diagram showing the structure of another conventional electrostatic deflector, which has a cross section in a direction perpendicular to the charged particle orbit. In the figure, 91 'is a septum electrode which is an anode made of a material that is difficult to process, such as tungsten, and is a thin partition wall 91b obtained by shaving one plate material.
And a thick plate portion for supporting and fixing to the septum electrode fixing frame 93 '. Reference numeral 91b is a partition wall portion which is a portion of the septum electrode 91 'facing the charged particle orbit, 92' is a cathode arranged to face the septum electrode 91 ', and 93' is a septum electrode for supporting and fixing the septum electrode 91 '. It is a fixed frame. The electrostatic deflector having this structure is referred to as Conventional Example 2.

【0008】[0008]

【発明が解決しようとする課題】従来の静電偏向器は以
上のように構成されているので、従来例1においては荷
電粒子のビームサイズを大きくする場合には図7に示し
たセプタム電極91及び陰極92のサイズも大きくする
必要があった。このため、セプタム電極91のセプタム
電極固定枠93に取り付けている部分の間隔が広がるこ
とにより、セプタム電極91の隔壁部91aが両電極9
1,92間の電磁気力によって変形してしまい、隔壁部
91aに沿って入出射する荷電粒子の衝突によることに
よるエネルギー損失が大きくなってしまうという課題が
あった。
Since the conventional electrostatic deflector is constructed as described above, in the conventional example 1, when the beam size of charged particles is increased, the septum electrode 91 shown in FIG. 7 is used. It was also necessary to increase the size of the cathode 92. For this reason, the interval between the portions of the septum electrode 91 attached to the septum electrode fixing frame 93 is increased, so that the partition wall portion 91a of the septum electrode 91 is separated from both electrodes 9.
There is a problem that the electromagnetic loss between the first and the second portions causes deformation, and energy loss due to collision of charged particles entering and exiting along the partition wall 91a increases.

【0009】また、静電偏向器のサイズを小さくするた
めに、セプタム電極91と陰極92の荷電粒子軌道に沿
った方向の長さを短くする試みがなされるが、このとき
も、偏向効率を維持するために両電極91,92間の電
位差を大きくする必要があるので、上記と同様にセプタ
ム電極91の隔壁部91aが両電極91,92間の電磁
気力によって変形してしまい、隔壁部91aに沿って入
出射する荷電粒子の衝突によるエネルギー損失が大きく
なってしまうという課題があった。
Further, in order to reduce the size of the electrostatic deflector, an attempt is made to shorten the lengths of the septum electrode 91 and the cathode 92 in the direction along the charged particle orbit. Since it is necessary to increase the potential difference between the electrodes 91 and 92 in order to maintain the same, the partition wall 91a of the septum electrode 91 is deformed by the electromagnetic force between the electrodes 91 and 92 in the same manner as described above, and the partition wall 91a. There was a problem that the energy loss due to the collision of charged particles entering and exiting along the path would increase.

【0010】さらに、従来例2のようにセプタム電極9
1’を1枚の板材から削り出して厚さの薄い隔壁部91
bと、セプタム電極固定枠93’に支持固定する厚板な
部分を形成する場合は、両電極91’,92’間の電磁
気力による変形の問題は解消されるが、剛性のある難加
工性の材料からセプタム電極91’を形成する加工は、
加工中の損傷や変形などを招くことが多いという課題が
あった。
Further, as in Conventional Example 2, the septum electrode 9
1'is carved out from one plate material to form a thin partition wall portion 91.
When b and a thick plate portion for supporting and fixing to the septum electrode fixing frame 93 'are formed, the problem of deformation due to the electromagnetic force between the two electrodes 91' and 92 'is solved, but it is rigid and difficult to work. The process of forming the septum electrode 91 'from the material
There is a problem that it often causes damage or deformation during processing.

【0011】この発明は上記のような課題を解決するた
めになされたもので、静電隔壁であるセプタム電極と陰
極との間に発生する電磁気力に耐える強度を有する剛性
のある難加工性材料を使用し、且つ静電隔壁の厚さを薄
くして荷電粒子の入射・出射効率を向上させた静電隔壁
を備えた静電偏向器及び静電隔壁の製造装置を得ること
を目的とする。
The present invention has been made to solve the above problems, and is a rigid and difficult-to-machine material having a strength to withstand an electromagnetic force generated between a septum electrode, which is an electrostatic partition, and a cathode. It is intended to obtain an electrostatic deflector and an apparatus for manufacturing an electrostatic partition, which uses an electrostatic partition and has a reduced thickness of the electrostatic partition to improve the entrance / exit efficiency of charged particles. .

【0012】[0012]

【課題を解決するための手段】この発明に係る静電偏向
器は、静電隔壁と、該静電隔壁と対向して配置した対向
電極とを備え、上記静電隔壁と上記対向電極との間に発
生する電場によって荷電粒子を偏向し、上記静電隔壁を
介して二つの荷電粒子軌道を分離若しくは融合する静電
偏向器において、上記静電隔壁は、上記荷電粒子の進行
を妨げない厚さを有するタングステンの隔壁部と、該隔
壁部の両端部に接合され、上記静電隔壁と上記対向電極
との間の電場により生じる電磁気力で上記隔壁部が変形
しないように補強するタングステンの補強部とからな
り、前記静電隔壁は、前記隔壁部と前記補強部との継手
間隙に金属又は合金を溶融・流入させて接合するもので
ある。
SUMMARY OF THE INVENTION An electrostatic deflector according to the present invention is provided with an electrostatic partition wall and a facing member arranged so as to face the electrostatic partition wall.
An electrode is provided, and an electrode is provided between the electrostatic partition and the counter electrode.
The charged particles are deflected by the generated electric field, and
Electrostatics separating or fusing two charged particle trajectories via
In the deflector, the electrostatic partition wall moves the charged particles.
A tungsten partition having a thickness that does not interfere with
Bonded to both ends of the wall, the electrostatic partition and the counter electrode
The partition wall is deformed by the electromagnetic force generated by the electric field between
Tungsten reinforcement and
The electrostatic partition wall is a joint between the partition wall section and the reinforcing section.
It joins by melting and flowing metal or alloy into the gap.
is there.

【0013】この発明に係る静電偏向器は、静電隔壁は
隔壁部の長手方向の両端部に補強部を接合し、隔壁部の
短手方向が荷電粒子の進行方向側となるようにするもの
である。
In the electrostatic deflector according to the present invention, the electrostatic partition wall has reinforcing portions joined to both ends of the partition wall in the longitudinal direction so that the lateral direction of the partition wall is the traveling direction side of the charged particles. It is a thing.

【0014】[0014]

【0015】この発明に係る静電偏向器は、静電隔壁は
隔壁部と補強部との接合を真空容器内で行うものであ
る。
In the electrostatic deflector according to the present invention, the electrostatic partition wall joins the partition part and the reinforcing part in a vacuum container.

【0016】この発明に係る静電偏向器は、静電隔壁は
隔壁部と高加工性部材とを接合し、高加工性部材を加工
して補強部を形成するものである。
In the electrostatic deflector according to the present invention, the electrostatic partition wall is formed by joining the partition wall portion and the high workability member and processing the high workability member to form the reinforcing portion.

【0017】この発明に係る静電偏向器は、接合する部
材を平面度の高いベース板に挟持させ、接合前に該部材
を真空容器内で加熱するものである。
In the electrostatic deflector according to the present invention, the members to be joined are sandwiched between the base plates having high flatness, and the members are heated in the vacuum container before joining.

【0018】この発明に係る静電隔壁の製造装置は、隔
壁部と補強部との接合を行う各々分割されたベース台
と、該ベース台上に設けた隔壁部と補強部との接合位置
を固定する位置決め部とを備え、隔壁部及び補強部は継
手間隙に金属又は合金を溶融・流入させて接合し、ベー
ス台は隔壁部及び補強部の加熱時に両部の熱膨張に合わ
せて硬球により移動するものである。
In the electrostatic barrier manufacturing apparatus according to the present invention, the divided bases for bonding the partition and the reinforcing portion, and the joint positions of the partition and the reinforcing portion provided on the base are provided. The partition part and the reinforcing part are joined by melting and inflowing metal or alloy into the joint gap, and the base is made of hard balls according to the thermal expansion of both parts when heating the partition part and the reinforcing part. It is something that moves.

【0019】この発明に係る静電隔壁の製造装置は、隔
壁部上に応力除去用おもりを配置するものである。
In the electrostatic barrier manufacturing apparatus according to the present invention, the stress removing weight is arranged on the barrier.

【0020】この発明に係る静電隔壁の製造装置は、装
置を真空容器内に設置するものである。
The electrostatic barrier manufacturing apparatus according to the present invention is to install the apparatus in a vacuum container.

【0021】[0021]

【発明の実施の形態】以下、この発明の実施の一形態を
説明する。実施の形態1.図1はこの発明の実施の形態
1による静電偏向器の静電隔壁を示す斜視図である。図
において、10は不図示の静電偏向器の静電隔壁である
セプタム電極、11はセプタム電極10を構成する薄板
(隔壁部)で、剛性があり破壊電場強度の高いタングス
テンなどから作成する。12,13は薄板11の長手方
向の両端部に接合された支持補強板(補強部)であり、
この支持補強板12,13を介して不図示のセプタム電
極固定枠に支持固定される。また、支持補強板12,1
3はセプタム電極10と不図示の陰極(対向電極)との
間に発生する電磁気力によってセプタム電極10の隔壁
部が変形しない(歪まない)ように補強するもので、上
記電磁気力がかかっても変形が起こらないように薄板1
1と比較して十分に厚いものを使用し、その材料として
タングステンなどが使用される。14は薄板11と支持
補強板12,13とを接合するろう材(溶融金属)であ
り、薄板11及び支持補強板12,13の融点より十分
低い金属又は合金を使用する。
BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below. Embodiment 1. 1 is a perspective view showing an electrostatic partition wall of an electrostatic deflector according to Embodiment 1 of the present invention. In the figure, 10 is a septum electrode which is an electrostatic partition of an electrostatic deflector (not shown), and 11 is a thin plate (partition) which constitutes the septum electrode 10 and is made of tungsten or the like which has rigidity and high breakdown electric field strength. Reference numerals 12 and 13 denote support reinforcing plates (reinforcing parts) joined to both ends of the thin plate 11 in the longitudinal direction,
It is supported and fixed to a septum electrode fixing frame (not shown) through the supporting and reinforcing plates 12 and 13. Also, the support and reinforcement plates 12, 1
Reference numeral 3 is to reinforce the partition wall of the septum electrode 10 so as not to be deformed (distorted) by an electromagnetic force generated between the septum electrode 10 and a cathode (counter electrode) not shown, and even if the electromagnetic force is applied. Thin plate 1 to prevent deformation
A material sufficiently thicker than that of No. 1 is used, and tungsten or the like is used as the material. Reference numeral 14 is a brazing material (molten metal) that joins the thin plate 11 and the supporting and reinforcing plates 12 and 13 and uses a metal or alloy sufficiently lower than the melting point of the thin plate 11 and the supporting and reinforcing plates 12 and 13.

【0022】次に概要について説明する。静電隔壁であ
るセプタム電極10の隔壁部に相当する薄板11は、歪
みなどが容易に起こらず、破壊電場強度の高いタングス
テンなどの剛性のある材質を使用する。上述したように
従来はこのタングステンなどの剛性のある材質でセプタ
ム電極を作成する場合、1部材からの削りだしによって
おり、剛性による切削性の悪さからある程度の平面度を
保って隔壁部を加工するのが非常に困難であった。一
方、本発明のセプタム電極10は従来のような削りだし
加工を採用せず、セプタム電極10を隔壁部である薄板
11のみを先に作成し、これを補強する補強部である支
持補強板12,13を後から接合して作成するようにし
た。これにより、以下に示すような利点がある。先ず、
従来の削りだしでは、セプタム電極の隔壁部の厚さを荷
電粒子の衝突によるエネルギー損失を十分に抑えること
ができる0.3mm以下程度に薄く加工することは非常
に困難であったが、予め上記程度に薄くした板材を薄板
11として使用することができる。これは、例えば冷間
圧延処理などを施した上記材質による板材は、素材のま
まで非常に平面度が高く、且つ上記程度の薄さに作成す
ることができるが、本発明ではこれをそのまま使用する
ことができる。
Next, an outline will be described. The thin plate 11 corresponding to the partition of the septum electrode 10, which is an electrostatic partition, is made of a rigid material such as tungsten, which has high breakdown electric field strength and does not easily distort. As described above, when the septum electrode is conventionally made of a rigid material such as tungsten, it is machined from one member, and the partition wall is processed with a certain degree of flatness due to the poor machinability due to rigidity. Was very difficult. On the other hand, the septum electrode 10 of the present invention does not adopt the conventional shaving process, but only the thin plate 11 that is the partition wall is first formed in the septum electrode 10, and the supporting and reinforcing plate 12 that is the reinforcing portion for reinforcing the septum electrode 10 is formed. , 13 were joined later to form. This has the following advantages. First,
With conventional shaving, it was very difficult to machine the partition wall of the septum electrode to a thickness of 0.3 mm or less, which can sufficiently suppress energy loss due to collision of charged particles. A thin plate material can be used as the thin plate 11. This is because, for example, a plate material made of the above-mentioned material that has been subjected to a cold rolling treatment can be made to have a very high flatness and a thinness of the above degree as it is, but in the present invention, it is used as it is. can do.

【0023】次にセプタム電極10は電極間に印加する
電圧を下げるために荷電粒子の軌道に沿った湾曲形状に
形成される。このような加工も従来の1部材からの削り
だしでは特殊かつ高度な精度を必要とする非常に困難な
加工であった。しかしながら、本発明の場合では薄板1
1を上記湾曲形状に変形させておきこの後支持補強板1
2,13を接合する、もしくは上記湾曲形状の型に薄板
11を押し付けながら支持補強板12,13を接合する
ことで容易に湾曲形状のセプタム電極10を作成するこ
とができる。
Next, the septum electrode 10 is formed in a curved shape along the trajectory of the charged particles in order to reduce the voltage applied between the electrodes. Such processing is also very difficult to perform with the conventional shaving from one member, which requires special and high precision. However, in the case of the present invention, the thin plate 1
1 is deformed into the above-mentioned curved shape, and thereafter, the supporting and reinforcing plate 1
The curved septum electrode 10 can be easily manufactured by bonding the support reinforcing plates 12 and 13 with each other or by bonding the support plate 12 and 13 while pressing the thin plate 11 against the curved mold.

【0024】さらに、2部材を接合して作成するセプタ
ム電極10では、これを使用する静電偏向器が扱う荷電
粒子ビームサイズや、静電偏向器のサイズなどに合わせ
て様々なタイプのものを容易に作成することができる。
例えば、この実施の形態1による静電偏向器のセプタム
電極10は薄板11の長手方向の両端部に支持補強板1
2,13を接合し、この支持補強板12,13で不図示
のセプタム電極固定枠に支持固定することで、薄板11
の短手方向が荷電粒子の進行方向側となるようにしてい
る。これにより、ビームサイズが大きい場合について
も、セプタム電極10の長さを短くすることができ、静
電偏向器の小型化を図ることができる。
Further, in the septum electrode 10 formed by joining two members, various types can be used according to the charged particle beam size handled by the electrostatic deflector using the same and the size of the electrostatic deflector. Can be easily created.
For example, the septum electrode 10 of the electrostatic deflector according to the first embodiment has the support reinforcing plate 1 at both ends of the thin plate 11 in the longitudinal direction.
2 and 13 are joined and supported and fixed to a septum electrode fixing frame (not shown) by the supporting and reinforcing plates 12 and 13, so that the thin plate 11
The short side direction of is the side of the charged particle traveling direction. Accordingly, even when the beam size is large, the length of the septum electrode 10 can be shortened, and the electrostatic deflector can be downsized.

【0025】上記の他にも、例えば上述した従来例1の
ように荷電粒子ビームサイズを大きくしてセプタム電極
91のセプタム電極固定枠93に取り付けている部分の
間隔が広がるような場合に、本発明では上記荷電粒子ビ
ームに接触しない程度まで上記セプタム電極10のセプ
タム電極固定枠に取り付けている部分にせり出す形に支
持補強板12,13のサイズを大きく加工することで、
上記電磁気力に対する隔壁部の補強を十分に行うことが
できるセプタム電極10を提供することができる。
In addition to the above, for example, when the charged particle beam size is increased to widen the interval between the portions of the septum electrode 91 attached to the septum electrode fixing frame 93, as in the case of the above-mentioned conventional example 1, the In the present invention, the size of the supporting and reinforcing plates 12 and 13 is processed to be large so as to project to the portion of the septum electrode 10 attached to the septum electrode fixing frame to the extent that it does not come into contact with the charged particle beam.
It is possible to provide the septum electrode 10 that can sufficiently reinforce the partition wall against the electromagnetic force.

【0026】次に薄板11と支持補強板12,13との
接合について説明する。薄板11と支持補強板12,1
3とは上記電磁気力などによって接合位置がずれること
がない程度に接合されていればよいが、静電偏向器は高
真空に保たれた容器内に設置され、荷電粒子の衝突によ
ってセプタム電極の温度が上昇し、放射線なども発生す
るため、有機物を含んだ接着剤などを使用することがで
きない。そこで、この実施の形態1ではろう付けにより
両部材の接合を行う。次にこのろう付けによる接合工程
について説明する。
Next, the joining of the thin plate 11 and the supporting and reinforcing plates 12 and 13 will be described. Thin plate 11 and supporting reinforcing plates 12, 1
3 may be joined to the extent that the joining position does not shift due to the electromagnetic force or the like, but the electrostatic deflector is installed in a container kept in a high vacuum and the septum electrode of the septum electrode is collided by collision of charged particles. Since the temperature rises and radiation is generated, it is impossible to use an adhesive containing an organic substance. Therefore, in the first embodiment, both members are joined by brazing. Next, the joining process by brazing will be described.

【0027】先ず、所望のサイズに加工した薄板11と
支持補強板12,13とを接合面に配置する。このとき
接合位置が動かないように押さえ治具などによって薄板
11と支持補強板12,13とを押さえるようにしても
よい。この後、これら薄板11及び支持補強板12,1
3をガスバーナーなどで加熱し、その継手間隙にろう材
14を溶融・流入させる。この実施の形態1では薄板1
1及び支持補強板12,13は融点がおよそ3400℃
であるタングステンからなるので、一般的なろう材は全
て使用することができるが、あまり融点の低い金属を使
用すると静電偏向器を設置する真空容器のベーキングな
どにおいて溶融するおそれがあるので、融点の高い(6
00〜800℃程度)銀ろうや黄銅ろうを使用する。但
し、融点を下げる亜鉛の含有量の少ないものを選択す
る。勿論、接合する部材の材質によっては上記以外のろ
う材を用いてもかまわない。以上のように、ろう付けに
より接合することの利点としては接合する部材の用途に
応じた接合剤であるろう材を選択することができ、さら
に、部材の継手間隙に溶融した金属を流入させるので、
むらの少ない接合をすることができ薄板11と支持補強
板12,13とが十分な接合強度を持って接合されたセ
プタム電極10を提供することができることである。
First, the thin plate 11 processed into a desired size and the supporting and reinforcing plates 12 and 13 are arranged on the joint surface. At this time, the thin plate 11 and the supporting and reinforcing plates 12 and 13 may be pressed by a pressing jig so that the joining position does not move. After this, these thin plates 11 and supporting and reinforcing plates 12, 1
3 is heated by a gas burner or the like, and the brazing material 14 is melted / flowed into the joint gap. In the first embodiment, the thin plate 1
1 and the supporting and reinforcing plates 12 and 13 have a melting point of about 3400 ° C.
Since it consists of tungsten, it is possible to use all common brazing filler metals, but if a metal with a too low melting point is used, it may melt during baking of the vacuum container in which the electrostatic deflector is installed. High (6
Silver solder or brass solder is used. However, a material containing a small amount of zinc that lowers the melting point is selected. Of course, a brazing material other than the above may be used depending on the material of the members to be joined. As described above, as an advantage of joining by brazing, it is possible to select a brazing material which is a joining agent according to the application of the members to be joined, and further, since the molten metal is made to flow into the joint gap of the members. ,
That is, it is possible to provide the septum electrode 10 in which the thin plate 11 and the supporting and reinforcing plates 12 and 13 are joined to each other with sufficient joining strength, which can be joined with less unevenness.

【0028】ろう付けによって薄板11と支持補強板1
2,13とを接合して作成したセプタム電極10は十分
に洗浄して静電偏向器に設置されるが、静電偏向器が設
置される真空容器の真空度を上げるためにベーキングし
て脱ガスを行う。
The thin plate 11 and the supporting and reinforcing plate 1 are brazed.
The septum electrode 10 formed by joining 2 and 13 is thoroughly cleaned and installed in the electrostatic deflector, but is baked and removed to increase the vacuum degree of the vacuum container in which the electrostatic deflector is installed. Do gas.

【0029】図2はこの発明の実施の形態1による静電
偏向器の静電隔壁を真空容器内で作成する場合を説明す
る斜視図である。図において、10’は真空容器内で作
成したセプタム電極(静電隔壁)で、14’は真空炉2
1内で使用されるろう材である。21はセプタム電極1
0’の作成を行う真空炉(真空容器)であり、内部を示
すために外周を透明にし一点破線で示している。なお、
図1と同一構成要素は同一符号を付し重複する説明を省
略する。
FIG. 2 is a perspective view for explaining a case where the electrostatic partition of the electrostatic deflector according to the first embodiment of the present invention is formed in a vacuum container. In the figure, 10 'is a septum electrode (electrostatic partition) created in a vacuum vessel, and 14' is a vacuum furnace 2.
It is a brazing material used in No. 1. 21 is a septum electrode 1
This is a vacuum furnace (vacuum vessel) for producing 0 ', and the outer periphery is made transparent to show the inside and is shown by a dashed line. In addition,
The same components as those in FIG.

【0030】次に概要について説明する。ろう付けは上
記に示したものと同様であるが、接合する環境を真空に
することの利点を以下に挙げる。先ず、真空炉21内は
外界と遮断されているので、加工中に塵などが付着する
ことがない。また、上記では薄板11と支持補強板1
2,13とをガスバーナーを用いて加熱することを示し
たが、このガスバーナーはガスの不完全燃焼による煤が
付着するので接合後に十分にセプタム電極10を洗浄す
る必要があった。これに対して真空下では上記ガスバー
ナーなどによる直接的な加熱ができず、一般的に電熱線
による通電加熱や電子線衝撃などによるので、不純物の
発生源がなく接合中に不純物が付着することがないの
で、上記のような洗浄工程を経る必要がない。
Next, an outline will be described. The brazing is similar to that shown above, but the advantages of making the joining environment vacuum are listed below. First, since the inside of the vacuum furnace 21 is shielded from the outside, dust and the like do not adhere during processing. In addition, in the above, the thin plate 11 and the support reinforcing plate 1
It was shown that 2 and 13 were heated by using a gas burner. However, since soot due to incomplete combustion of gas adheres to this gas burner, it was necessary to sufficiently clean the septum electrode 10 after joining. On the other hand, under vacuum, direct heating by the gas burner, etc. is not possible, and generally due to current heating by heating wire or electron beam impact, etc., there is no source of impurities and impurities will adhere during bonding. Therefore, it is not necessary to go through the cleaning process as described above.

【0031】また、常圧下におけるろう付けでは、ろう
材14’に含まれる溶存ガスによってボイドやピンホー
ルが発生する可能性があるが、真空下では薄板11と支
持補強板12,13との継手間隙にろう材14’を溶融
させた時点で溶存ガスが真空中に引かれるので、上記ボ
イドやピンホールが発生せずに済み、むらのない接合率
の高い接合を行うことができる。
Further, in brazing under normal pressure, voids and pinholes may be generated by the dissolved gas contained in the brazing material 14 ', but under vacuum, the joint between the thin plate 11 and the supporting and reinforcing plates 12 and 13 is formed. Since the dissolved gas is drawn into the vacuum when the brazing material 14 'is melted in the gap, the above voids and pinholes are not generated, and it is possible to perform the bonding with a high bonding rate without unevenness.

【0032】さらに、上記ろう付けのために薄板11と
支持補強板12,13とが高真空下で高温(少なくとも
ろう材14’の融点以上)に加熱されるので、薄板11
や支持補強板12,13に溶存している水素や一酸化炭
素などを脱ガスすることができる。これにより、セプタ
ム電極10の製作後の放射ガス率が低減され、長時間の
ベーキングを行うことなく高真空中で使用することがで
きる。
Further, since the thin plate 11 and the supporting and reinforcing plates 12 and 13 are heated to a high temperature (at least above the melting point of the brazing material 14 ') under high vacuum for the brazing, the thin plate 11
It is possible to degas hydrogen, carbon monoxide and the like dissolved in the support reinforcing plates 12 and 13. As a result, the emissive gas rate after manufacturing the septum electrode 10 is reduced, and the septum electrode 10 can be used in a high vacuum without baking for a long time.

【0033】以上のように、この実施の形態1によれ
ば、静電隔壁であるセプタム電極10を、上記荷電粒子
軌道の進行を妨げない厚さを有する隔壁部である薄板1
1と、該薄板11の両端部に接合され、セプタム電極1
0と対向電極との間の電場により生じる電磁気力で隔壁
部が変形しないように補強する支持補強板12,13と
から構成したので、難加工性材料の削りだしなどの困難
な加工を省略し所望のサイズや形状のセプタム電極10
を容易に作成することができる。また、冷間圧延処理に
よって作成された平面度の高い板材をそのまま使用する
ことができるのでコスト的にも有利となる。
As described above, according to the first embodiment, the septum electrode 10, which is an electrostatic partition, has a thin plate 1 which is a partition part having a thickness that does not hinder the progress of the charged particle orbit.
1 and the both ends of the thin plate 11 are joined together to form a septum electrode 1
Since it is composed of the supporting and reinforcing plates 12 and 13 that reinforce the partition wall so as not to be deformed by the electromagnetic force generated by the electric field between 0 and the counter electrode, it is possible to omit difficult processing such as shaving of a difficult-to-process material. Septum electrode 10 of desired size and shape
Can be created easily. Further, since the plate material having high flatness created by the cold rolling process can be used as it is, it is advantageous in cost.

【0034】また、この実施の形態1によれば、セプタ
ム電極10は薄板11の長手方向の両端部に支持補強板
12,13を接合し、薄板11の短手方向が荷電粒子の
進行方向側となるようにするので、ビームサイズが大き
い場合についても、セプタム電極10の長さを短くする
ことができ、これにより静電偏向器の小型化を図ること
ができる。
Further, according to the first embodiment, in the septum electrode 10, the supporting and reinforcing plates 12 and 13 are joined to both ends of the thin plate 11 in the longitudinal direction, and the lateral direction of the thin plate 11 is the traveling direction of the charged particles. Therefore, even when the beam size is large, the length of the septum electrode 10 can be shortened, and thus the electrostatic deflector can be downsized.

【0035】さらに、この実施の形態1によれば、セプ
タム電極10は薄板11と支持補強板12,13との継
手間隙にろう材を溶融・流入させて接合するので、接合
する部材の用途に応じた接合剤であるろう材を選択する
ことができ、さらに、むらの少ない接合をすることがで
きる。これにより、薄板11と支持補強板12,13と
が十分な接合強度を持って接合されたセプタム電極10
を提供することができる。
Further, according to the first embodiment, since the septum electrode 10 is melted and flows into the joint gap between the thin plate 11 and the supporting and reinforcing plates 12 and 13 to be joined, it is used as a joining member. It is possible to select a brazing material that is a suitable bonding agent, and further, it is possible to perform bonding with less unevenness. As a result, the septum electrode 10 in which the thin plate 11 and the supporting and reinforcing plates 12 and 13 are bonded with sufficient bonding strength
Can be provided.

【0036】さらに、この実施の形態1によれば、セプ
タム電極10は隔壁部である薄板11と補強部である支
持補強板12,13とのろう付けによる接合を真空容器
内で行うので、加工中に塵などの不純物が付着すること
がなく、洗浄の手間をはぶくことができる。また、真空
中でろう材14’を溶融させるので溶存ガスが脱ガスさ
れボイドやピンホールが発生せずに済み、むらのない接
合率の高い接合を行うことができる。さらに、高真空下
でセプタム電極10が加熱されるので、製作後の放射ガ
ス率が低減され、長時間のベーキングを行うことなく高
真空中で使用することができる。
Further, according to the first embodiment, the septum electrode 10 is brazed to the thin plate 11 which is the partition wall and the supporting and reinforcing plates 12 and 13 which are the reinforcing parts in the vacuum container. Since impurities such as dust do not adhere to the inside, cleaning work can be saved. Further, since the brazing filler metal 14 'is melted in a vacuum, the dissolved gas is degassed and voids and pinholes are not generated, and it is possible to carry out the joining with a high joining rate without unevenness. Further, since the septum electrode 10 is heated under a high vacuum, the emissive gas rate after fabrication is reduced and it can be used in a high vacuum without baking for a long time.

【0037】実施の形態2.この実施の形態2では上記
実施の形態1で示したセプタム電極のろう付けによる製
作を高精度に行う装置に関するものである。
Embodiment 2. The second embodiment relates to an apparatus for highly accurately manufacturing the septum electrode shown in the first embodiment by brazing.

【0038】図3はこの発明の実施の形態2による静電
隔壁の製造装置の構成を示す図で、(a)は上面図、
(b)は(a)のA−A線に沿った断面図である。図に
おいて、31,32,33は薄板11及び支持補強板1
2,13をのせる可動ベース(ベース台)であり、薄板
11及び支持補強板12,13を加熱するヒーター(図
示省略)を備えている。34は、鋼球35を介して可動
ベース31,32,33をのせるベース台、36,37
は可動ベース32と可動ベース33にそれぞれ設けら
れ、薄板11と支持補強板12,13との接合位置を固
定する位置決め用ピン(位置決め部)である。また、薄
板11及び支持補強板12,13には支持補強板12,
13を薄板11の接合位置に配置した状態で薄板11及
び支持補強板12,13を貫通する孔部が形成されてお
り、位置決め用ピン36,37をこの孔部に挿入して位
置決めを行う。なお、図1と同一構成要素には同一符号
を付して重複する説明を省略する。
FIG. 3 is a view showing the arrangement of an electrostatic barrier rib manufacturing apparatus according to Embodiment 2 of the present invention, in which (a) is a top view,
(B) is sectional drawing which followed the AA line of (a). In the figure, 31, 32, and 33 are thin plates 11 and supporting and reinforcing plates 1.
It is a movable base (base stand) on which the sheets 2 and 13 are placed, and is provided with a heater (not shown) for heating the thin plate 11 and the supporting and reinforcing plates 12 and 13. 34 is a base stand on which the movable bases 31, 32 and 33 are mounted via steel balls 35, and 36 and 37.
Is a positioning pin (positioning portion) which is provided on each of the movable base 32 and the movable base 33 and fixes the joining position between the thin plate 11 and the supporting and reinforcing plates 12 and 13. In addition, the thin plate 11 and the support and reinforcement plates 12 and 13 include the support and reinforcement plates 12,
Holes are formed through the thin plate 11 and the supporting and reinforcing plates 12 and 13 in a state in which 13 is arranged at the joining position of the thin plates 11, and positioning pins 36 and 37 are inserted into these holes to perform positioning. In addition, the same components as those in FIG. 1 are designated by the same reference numerals, and duplicate description will be omitted.

【0039】次に動作について説明する。先ず、可動ベ
ース31,32,33上に薄板11を配置し、その接合
位置上に支持補強板12,13を配置して位置決め用ピ
ン36,37を孔部に挿入して薄板11と支持補強板1
2,13との接合位置を決定する。このように薄板11
及び支持補強板12,13は位置決め用ピン36,37
によって固定されているためセプタム電極の仕上がり精
度を向上することができ、ろう付け中に薄板11と支持
補強板12,13とがずれてしまうことを防ぐことがで
きる。
Next, the operation will be described. First, the thin plate 11 is arranged on the movable bases 31, 32 and 33, the support and reinforcement plates 12 and 13 are arranged on the joining positions thereof, and the positioning pins 36 and 37 are inserted into the holes to support the thin plate 11 and the support and reinforcement. Board 1
The joint position with 2 and 13 is determined. Thus, the thin plate 11
And the supporting and reinforcing plates 12 and 13 are positioning pins 36 and 37.
Since it is fixed by the above, the finishing accuracy of the septum electrode can be improved, and the thin plate 11 and the supporting and reinforcing plates 12 and 13 can be prevented from being displaced during brazing.

【0040】次に可動ベース31,32,33に備えた
ヒーターによって薄板11と支持補強板12,13とを
加熱する。ある程度昇温が進むと、薄板11と支持補強
板12,13、可動ベース32,33がそれぞれ熱膨張
を起こす。このとき、可動ベース31,32,33は図
3(a)に示すように各々が分割されており、さらに鋼
球35によって自在に移動することができるので、位置
決め用ピン36,37を起点として可動ベース32,3
3が移動する。これにより、薄板11及び支持補強板1
2,13と、位置決め用ピン36,37を固定している
可動ベース32,33との熱膨張差を吸収し薄板11に
熱応力が加わることを防ぐことができる。
Next, the thin plate 11 and the supporting and reinforcing plates 12 and 13 are heated by the heaters provided on the movable bases 31, 32 and 33. When the temperature rises to a certain extent, the thin plate 11, the supporting and reinforcing plates 12 and 13, and the movable bases 32 and 33 cause thermal expansion. At this time, the movable bases 31, 32, and 33 are divided as shown in FIG. 3A, and can be freely moved by the steel ball 35. Therefore, the positioning pins 36 and 37 are used as starting points. Movable base 32,3
3 moves. Thereby, the thin plate 11 and the support reinforcing plate 1
It is possible to prevent thermal stress from being applied to the thin plate 11 by absorbing the difference in thermal expansion between the movable bases 32 and 33 that fix the positioning pins 36 and 37 and the movable pins 32 and 33.

【0041】このあと、薄板11と支持補強板12,1
3がろう材の融点まで昇温されたら、その継手間隙にろ
う材を溶融・流入させて接合を行う。この接合操作や使
用するろう材などは上記実施の形態1に述べたものと同
様である。
After that, the thin plate 11 and the supporting and reinforcing plates 12, 1
When the temperature of 3 is raised to the melting point of the brazing material, the brazing material is melted / flowed into the joint gap to perform joining. The joining operation and the brazing material used are the same as those described in the first embodiment.

【0042】図4はこの発明の実施の形態2による静電
隔壁の製造装置の他の構成を示す図で、(a)は上面
図、(b)は(a)のB−B線に沿った断面図である。
図において、61,62,63は薄板11のセプタム電
極の隔壁部となる部分、支持補強板12及び支持補強板
13上にそれぞれ配置したおもり(応力除去用おもり)
である。なお、図3と同一構成要素には同一符号を付し
重複する説明を省略する。
FIG. 4 is a diagram showing another structure of the electrostatic barrier manufacturing apparatus according to the second embodiment of the present invention. FIG. 4A is a top view and FIG. 4B is a sectional view taken along line BB of FIG. FIG.
In the figure, 61, 62 and 63 are weights (stress-removing weights) respectively arranged on the portion of the thin plate 11 that serves as the partition of the septum electrode, the supporting and reinforcing plate 12 and the supporting and reinforcing plate 13.
Is. In addition, the same components as those in FIG. 3 are denoted by the same reference numerals, and overlapping description will be omitted.

【0043】次に概要について説明すると、上述のよう
におもり61,62,63を配置せずに加熱を行うと、
熱膨張によって可動ベース32,33が動くことにより
薄板11のセプタム電極の隔壁部となる部分に応力が集
中する恐れがある。そこでおもり61,62,63を配
置してから加熱すると薄板11及び支持補強板12,1
3の応力除去を行うことができる。これにより、製作し
たセプタム電極が変形したりすることがなく、仕上がり
精度をより向上させることができる。
The outline will be described below. When heating is performed without disposing the weights 61, 62 and 63 as described above,
When the movable bases 32 and 33 move due to thermal expansion, stress may concentrate on the portion of the thin plate 11 that will be the partition of the septum electrode. Therefore, when the weights 61, 62, 63 are arranged and then heated, the thin plate 11 and the supporting and reinforcing plates 12, 1 are
The stress relief of 3 can be performed. As a result, the manufactured septum electrode is not deformed, and the finishing accuracy can be further improved.

【0044】また、上記のセプタム電極の製造装置を真
空容器内に設置してもよい。この場合、容器内でろう付
け作業を行う特殊なマニピュレータなどを作成する必要
があるが、真空中でろう付けすることにより上記実施の
形態1で示したようなボイドやピンホールのない接合率
の高い接合をすることができる。さらに、薄板11や支
持補強板12,13の加熱によって発生する熱膨張によ
る熱応力を除去できるのでセプタム電極の精度良い加工
をすることができる。
Further, the above septum electrode manufacturing apparatus may be installed in a vacuum container. In this case, it is necessary to create a special manipulator or the like for performing the brazing work in the container, but by brazing in a vacuum, it is possible to obtain a bonding rate without voids and pinholes as shown in the first embodiment. A high bond can be made. Further, since the thermal stress due to the thermal expansion generated by the heating of the thin plate 11 and the supporting and reinforcing plates 12 and 13 can be removed, the septum electrode can be accurately processed.

【0045】以上のように、この実施の形態2によれ
ば、薄板11と支持補強板12,13との接合を行う可
動ベース31,32,33と、この可動ベース31,3
2,33上に設けた薄板11と支持補強板12,13と
の接合位置を固定する位置決め部である位置決め用ピン
36,37とを備え、薄板11及び支持補強板12,1
3は継手間隙に金属又は合金であるろう材を溶融・流入
させて接合し、可動ベース31,32,33は薄板11
及び支持補強板12,13の加熱時にこれらの熱膨張に
合わせて移動するので、薄板11及び支持補強板12,
13と、位置決め用ピン36,37を固定している可動
ベース32,33との熱膨張差を吸収し薄板11に熱応
力が加わることを防ぐことができる。これにより、製作
したセプタム電極が変形したりすることがなく、仕上が
り精度をより向上させることができる。
As described above, according to the second embodiment, the movable bases 31, 32, 33 for joining the thin plate 11 and the supporting and reinforcing plates 12, 13 and the movable bases 31, 3 are used.
The thin plate 11 and the supporting and reinforcing plates 12, 1 are provided with positioning pins 36, 37 which are positioning parts for fixing the joining positions of the thin plate 11 and the supporting and reinforcing plates 12, 13 provided on the thin plate 11, 2, 33.
3 is a brazing material that is a metal or an alloy that is melted and flows into the joint gap to join the brazing material, and the movable bases 31, 32 and 33 are thin plates 11
When the support and reinforcing plates 12 and 13 are heated, the thin plate 11 and the support and reinforcing plates 12 and 13 move in accordance with their thermal expansion.
It is possible to absorb the difference in thermal expansion between the movable bases 32 and 33 that fix the positioning pins 36 and 37, and to prevent thermal stress from being applied to the thin plate 11. As a result, the manufactured septum electrode is not deformed, and the finishing accuracy can be further improved.

【0046】また、この実施の形態2によれば、薄板1
1上に応力除去用おもりであるおもり61,62,63
を配置するので、特に薄板11のセプタム電極の隔壁部
となる部分に熱応力が集中することを防ぐことができ
る。
Further, according to the second embodiment, the thin plate 1
Weights 61, 62, 63 which are stress-relieving weights on 1
By disposing, the thermal stress can be prevented from concentrating particularly on the portion of the thin plate 11 that will be the partition of the septum electrode.

【0047】さらに、この実施の形態2によれば、装置
を真空容器内に設置するので、ボイドやピンホールのな
い接合率の高い接合をすることができ、さらに、熱膨張
によって発生する熱応力を除去できる。これにより、さ
らに精度の良いセプタム電極の加工をすることができ
る。
Further, according to the second embodiment, since the apparatus is installed in the vacuum container, it is possible to perform the bonding with a high bonding rate without voids and pinholes, and further, the thermal stress generated by the thermal expansion. Can be removed. As a result, the septum electrode can be processed with higher accuracy.

【0048】実施の形態3.この実施の形態3では上記
実施の形態で説明したろう付け加工を行う前に接合する
部材を平面度の高いベース板に挟持させ、該部材を真空
容器内で加熱する前処理を行うものである。
Embodiment 3. In the third embodiment, the members to be joined before the brazing process described in the above embodiments are sandwiched between the base plates having high flatness, and the pretreatment of heating the members in the vacuum container is performed. .

【0049】図5はこの発明の実施の形態3による静電
偏向器の静電隔壁の隔壁部となる薄板11の前処理を説
明する斜視図である。図において、71は平面度の高い
板状のおもり(ベース板)、72は薄板11を介してお
もり71をのせるベース台(ベース板)であり、平面度
の高い板状の部材からなる。73は真空炉(真空容器)
であり、内部を示すために外周を透明にし一点破線で示
している。
FIG. 5 is a perspective view for explaining the pretreatment of the thin plate 11 which becomes the partition wall portion of the electrostatic partition wall of the electrostatic deflector according to the third embodiment of the present invention. In the figure, 71 is a plate-shaped weight (base plate) having a high flatness, and 72 is a base table (base plate) on which the weight 71 is placed via the thin plate 11, and is composed of a plate-shaped member having a high flatness. 73 is a vacuum furnace (vacuum container)
In order to show the inside, the outer circumference is made transparent and is shown by a dashed line.

【0050】次に概要について説明する。上記実施の形
態で示したろう付けを行う前に、接合する部材である薄
板11や支持補強板12,13を平面度の高いベース板
であるおもり71とベース台72に挟持させ、これらを
真空炉73内で加熱する。図5の例では接合する部材と
して薄板11がおもり71とベース台72に挟持されて
いる。これを真空炉73内において加熱することによ
り、薄板11の製造時に薄板11内に含まれていた残留
応力を除去することができる。これにより、加熱時の変
形が抑えられ、薄板11の平面度を高めることができ
る。さらに、平面度の向上によりろう付け時にろう材が
均一に分布するようになり、ろう付け接合後のセプタム
電極の厚み精度が向上する。
Next, an outline will be described. Before performing the brazing shown in the above-mentioned embodiment, the thin plate 11 and the supporting and reinforcing plates 12 and 13 which are members to be joined are sandwiched between the weight 71 and the base pedestal 72 which are base plates having high flatness, and these are vacuum furnace. Heat in 73. In the example of FIG. 5, the thin plate 11 is sandwiched between the weight 71 and the base 72 as a member to be joined. By heating this in the vacuum furnace 73, the residual stress contained in the thin plate 11 at the time of manufacturing the thin plate 11 can be removed. As a result, deformation during heating is suppressed, and the flatness of the thin plate 11 can be increased. Further, the improved flatness allows the brazing material to be uniformly distributed during brazing, which improves the thickness accuracy of the septum electrode after brazing and joining.

【0051】以上のように、この実施の形態3によれ
ば、接合する部材である薄板11や支持補強板12,1
3を平面度の高いベース板であるおもり71及びベース
台72に挟持し、接合前に該部材を真空炉73内で加熱
するので、接合する部材の製造時に生じた残留応力を除
去することができ、接合する部材の平面度を高めること
ができる。また、これにより、ろう材が均一に分布する
ようになり、ろう付け接合後のセプタム電極の厚み精度
を向上させることができる。
As described above, according to the third embodiment, the thin plate 11 and the support / reinforcement plates 12, 1 which are members to be joined are used.
3 is sandwiched between a weight 71 and a base 72, which are base plates having high flatness, and the member is heated in a vacuum furnace 73 before joining, so that residual stress generated during manufacturing of the members to be joined can be removed. Therefore, the flatness of the members to be joined can be increased. Moreover, this allows the brazing material to be uniformly distributed, and the accuracy of the thickness of the septum electrode after brazing can be improved.

【0052】なお、上記実施の形態3に示した接合する
部材の前処理操作は、上記実施の形態1から実施の形態
2の構成に対して行っても良い。
The pretreatment operation of the members to be joined shown in the third embodiment may be performed for the configurations of the first to second embodiments.

【0053】実施の形態4.上記実施の形態では、予め
作成しておいた隔壁部と補強部とを接合してセプタム電
極を作成したが、この実施の形態4は破壊電場強度の高
い剛性のある部材と高加工性の部材とを接合し、高加工
性部材を加工して補強部を作成するものである。
Fourth Embodiment In the above-described embodiment, the septum electrode is created by joining the partition part and the reinforcing part that are created in advance, but in the fourth embodiment, a rigid member having a high breaking electric field strength and a highly workable member. Are joined together and the high workability member is processed to form a reinforcing portion.

【0054】図6はこの発明の実施の形態4による静電
偏向器の静電隔壁の作成過程を示す説明図である。図に
おいて、10’’はこの実施の形態4による静電隔壁で
あるセプタム電極、81はタングステンなどの剛性のあ
る材質からなる板部材(隔壁部)で、上記実施の形態1
の薄板11と同様の厚さを有する。82は高加工性のタ
ンタルやモリブデンなどの材質からなる板部材(高加工
性部材)、81aは板部材82を削りだして作成した隔
壁部、82a,82bは板部材82を削りだして作成し
た支持補強板(補強部)である。
FIG. 6 is an explanatory view showing a process of forming an electrostatic partition of the electrostatic deflector according to the fourth embodiment of the present invention. In the figure, 10 ″ is a septum electrode which is an electrostatic partition according to the fourth embodiment, 81 is a plate member (partition) which is made of a rigid material such as tungsten, and is used in the first embodiment.
The thin plate 11 has the same thickness. Numeral 82 is a plate member (highly machinable member) made of a material such as tantalum or molybdenum having high machinability, 81a is a partition formed by shaving the plate member 82, and 82a and 82b are shaving the plate member 82. It is a support reinforcing plate (reinforcing part).

【0055】次に概要について説明する。板部材81,
82の接合は上記実施の形態1で示したろう付けによっ
てもよいし、他の接合手段として爆発力を利用して部材
を圧接する爆着を用いても良い。このようにして接合し
た板部材81,82は、高加工性材質からなる板部材8
2側のみに機械加工を施して支持補強板82a,82b
を削り出し、セプタム電極10’’を作成する。板部材
82に使用されるタンタルやモリブデンなどはタングス
テンと異なって切削性がよいので、セプタム電極の削り
だしによる機械加工を容易に行うことができ、また、機
械加工時における変形も少なくできるので必要な形状の
セプタム電極を高精度に作成することができる。
Next, an outline will be described. Plate member 81,
The joining of 82 may be performed by the brazing shown in the first embodiment, or as another joining means, explosive force may be used to explode to press members together. The plate members 81 and 82 joined in this manner are plate members 8 made of a highly workable material.
Support reinforcement plates 82a, 82b by machining only the 2 side
Are carved out to form a septum electrode 10 ″. Since tantalum, molybdenum, and the like used for the plate member 82 have good machinability unlike tungsten, they can be easily machined by shaving the septum electrode and can be deformed less during machining, which is necessary. A septum electrode of various shapes can be produced with high precision.

【0056】以上のように、この実施の形態4によれ
ば、セプタム電極10’’は隔壁部となる板部材81と
高加工性部材である板部材82とを接合し、板部材82
を加工して支持補強板82a,82bを形成するので、
機械加工時における変形も少なくすることができ、必要
な形状のセプタム電極10’’を高精度に作成すること
ができる。
As described above, according to the fourth embodiment, in the septum electrode 10 ″, the plate member 81 serving as the partition wall portion and the plate member 82 serving as the high workability member are joined to each other to form the plate member 82.
Is processed to form the support reinforcing plates 82a and 82b,
Deformation during machining can be reduced, and the septum electrode 10 ″ having a required shape can be formed with high accuracy.

【0057】なお、上記実施の形態1、実施の形態3及
び実施の形態4では薄板11(板部材81)と支持補強
板12,13(板部材82)とをろう付けにて接合する
ことを示したが、本発明のセプタム電極は、このセプタ
ム電極と対向する陰極との間に生じる電磁気力に耐えう
る程度の接合強度が得られていればよく、特にろう付け
に限定されるものではない。例えば、ねじ止めにより上
記部材を固定することも可能である。この場合、平面度
を保つために加工精度を必要とするが着脱可能に取り付
けられるので用途に応じて様々な形状に加工した部材を
使用することができる。
In the first, third and fourth embodiments, the thin plate 11 (plate member 81) and the supporting and reinforcing plates 12, 13 (plate member 82) are joined by brazing. As shown, the septum electrode of the present invention is not particularly limited to brazing, as long as the bonding strength is sufficient to withstand the electromagnetic force generated between the septum electrode and the facing cathode. . For example, the members can be fixed by screwing. In this case, processing accuracy is required to maintain the flatness, but since it is removably attached, members processed into various shapes can be used according to the application.

【0058】[0058]

【発明の効果】以上のように、この発明の静電偏向器に
よれば、静電隔壁は、荷電粒子の進行を妨げない厚さを
有する隔壁部と、該隔壁部の両端部に接合され、静電隔
壁と対向電極との間の電場により生じる電磁気力で隔壁
部が変形しないように補強する補強部とから構成するの
で、難加工性材料の削りだしなどの困難な加工を省略し
所望のサイズや形状に加工した隔壁部や補強部を接合し
て静電隔壁を作成するので従来と比較して格段に容易に
製作することができる効果がある。換言すると、従来の
加工の困難性や制約が解消されるので隔壁部や補強部の
最適なサイズや形状の補強部を自由に選択することがで
き、静電隔壁と対向電極との間に発生する電磁気力によ
って隔壁部が変形することのない静電隔壁を提供するこ
とができる。これにより、入出射する荷電粒子のエネル
ギー損失を低減することができる静電隔壁を備えた静電
偏向器を提供することができる効果がある。
As described above, according to the electrostatic deflector of the present invention, the electrostatic partition wall is joined to the partition wall portion having a thickness that does not hinder the progress of the charged particles and both end portions of the partition wall portion. , And a reinforcing portion that reinforces the partition wall so that the partition wall is not deformed by the electromagnetic force generated by the electric field between the electrostatic partition wall and the counter electrode. Therefore, it is desirable to omit difficult processing such as shaving difficult-to-machine materials. Since the partition wall and the reinforcing portion processed into the size and shape are joined to form the electrostatic partition wall, there is an effect that it can be manufactured much more easily than the conventional one. In other words, the difficulty and restrictions of conventional processing can be solved, so that it is possible to freely select the reinforcing portion having the optimum size and shape of the partition wall portion or the reinforcing portion, and it is possible to generate between the electrostatic partition wall and the counter electrode. It is possible to provide an electrostatic partition wall in which the partition wall portion is not deformed by the electromagnetic force. As a result, there is an effect that it is possible to provide an electrostatic deflector provided with an electrostatic partition wall that can reduce energy loss of charged particles entering and exiting.

【0059】また、隔壁部と補強部とを接合するだけで
静電隔壁を作成することができるので、冷間圧延処理に
よって作成された平面度の高い板材をそのまま使用する
ことができ、コスト的にも有利となる効果がある。
Further, since the electrostatic barrier ribs can be formed only by joining the barrier rib portion and the reinforcing portion, it is possible to use the plate material having a high flatness produced by the cold rolling process as it is, which is cost effective. There is also an advantageous effect.

【0060】この発明の静電偏向器によれば、静電隔壁
は隔壁部の長手方向の両端部に補強部を接合し、隔壁部
の短手方向が荷電粒子の進行方向側となるようにするの
で、ビームサイズが大きい場合についても、静電隔壁の
長さを短くすることができ、静電偏向器の小型化を図る
ことができる効果がある。
According to the electrostatic deflector of the present invention, the electrostatic partition wall has reinforcing portions joined to both ends of the partition wall in the longitudinal direction so that the lateral direction of the partition wall is the traveling direction side of the charged particles. Therefore, even when the beam size is large, the length of the electrostatic partition wall can be shortened, and the electrostatic deflector can be downsized.

【0061】この発明の静電偏向器によれば、静電隔壁
は隔壁部と補強部との継手間隙に金属又は合金を溶融・
流入させて接合するので、接合する部材の用途に応じた
金属又は合金を選択することができ、さらに、むらの少
ない接合をすることができる。これにより、隔壁部と補
強部とが十分な接合強度を持って接合された静電隔壁を
提供することができる効果がある。
According to the electrostatic deflector of the present invention, the electrostatic partition wall melts the metal or alloy in the joint gap between the partition section and the reinforcing section.
Since they are made to flow and are joined, it is possible to select a metal or an alloy according to the application of the members to be joined, and further, it is possible to join with less unevenness. As a result, there is an effect that it is possible to provide an electrostatic partition wall in which the partition wall portion and the reinforcing portion are bonded together with a sufficient bonding strength.

【0062】この発明の静電偏向器によれば、静電隔壁
は隔壁部と補強部との接合を真空容器内で行うので、加
工中に塵などの不純物が付着することがなく、洗浄の手
間をはぶくことができる効果がある。
According to the electrostatic deflector of the present invention, since the electrostatic partition wall is joined to the partition part and the reinforcing part in a vacuum container, impurities such as dust do not adhere during processing, and cleaning is performed. There is an effect that you can reduce the effort.

【0063】また、真空中で金属又は合金を溶融させる
ので溶存ガスが脱ガスされボイドやピンホールが発生せ
ずに済み、むらのない接合率の高い接合を行うことがで
きる効果がある。
Further, since the metal or alloy is melted in a vacuum, the dissolved gas is not degassed and voids and pinholes are not generated, and there is an effect that it is possible to carry out bonding with a high bonding rate without unevenness.

【0064】さらに、高真空下で静電隔壁が加熱される
ので、製作後の放射ガス率が低減され、長時間のベーキ
ングを行うことなく高真空中で使用することができる効
果がある。
Furthermore, since the electrostatic barrier ribs are heated in a high vacuum, the radiation gas rate after fabrication is reduced, and there is an effect that they can be used in a high vacuum without baking for a long time.

【0065】この発明の静電偏向器によれば、静電隔壁
は隔壁部と高加工性部材とを接合し、高加工性部材を加
工して補強部を形成するので、機械加工時における変形
も少なくすることができ、必要な形状の静電隔壁を高精
度に作成することができる効果がある。
According to the electrostatic deflector of the present invention, since the electrostatic partition wall joins the partition wall portion and the high workability member and processes the high workability member to form the reinforcing portion, deformation during machining. It is also possible to reduce the number of electrodes, and it is possible to produce an electrostatic barrier having a required shape with high accuracy.

【0066】この発明の静電偏向器によれば、接合する
部材を平面度の高いベース板に挟持させ、接合前に該部
材を真空容器内で加熱するので、接合する部材の製造時
に生じた残留応力を除去することができ、接合する部材
の平面度を高めることができる。また、これにより、溶
融させた金属又は合金が均一に分布するようになり、接
合後の静電隔壁の厚み精度を向上させることができる効
果がある。
According to the electrostatic deflector of the present invention, the members to be joined are sandwiched between the base plates having high flatness, and the members are heated in the vacuum container before joining. Residual stress can be removed, and the flatness of the members to be joined can be increased. Further, this allows the molten metal or alloy to be uniformly distributed, which has the effect of improving the thickness accuracy of the electrostatic barrier ribs after joining.

【0067】この発明の静電隔壁の製造装置によれば、
隔壁部と補強部との接合を行うベース台と、該ベース台
上に設けた隔壁部と補強部との接合位置を固定する位置
決め部とを備え、隔壁部及び補強部は継手間隙に金属又
は合金を溶融・流入させて接合し、ベース台は隔壁部及
び補強部の加熱時に両部の熱膨張に合わせて移動するの
で、隔壁部及び補強部とベース台との熱膨張差を吸収し
隔壁部に熱応力が加わることを防ぐことができる。これ
により、製作した静電隔壁が変形したりすることがな
く、仕上がり精度をより向上させることができる効果が
ある。
According to the electrostatic barrier manufacturing apparatus of the present invention,
The base part for joining the partition part and the reinforcing part and the positioning part for fixing the joining position of the partition part and the reinforcing part provided on the base stand are provided, and the partition part and the reinforcing part are made of metal or metal in the joint gap. The alloy is melted / flowed in and joined, and the base pedestal moves according to the thermal expansion of the partition wall and the reinforcing part during heating, so the thermal expansion difference between the partition part and the reinforcing part and the base pedestal is absorbed. It is possible to prevent thermal stress from being applied to the part. As a result, the produced electrostatic partition wall is not deformed, and the finishing accuracy can be further improved.

【0068】この発明の静電隔壁の製造装置によれば、
隔壁部上に応力除去用おもりを配置するので、特に隔壁
部に熱応力が集中することを防ぐことができる効果があ
る。
According to the electrostatic barrier manufacturing apparatus of the present invention,
Since the stress removing weight is arranged on the partition wall, it is possible to prevent the thermal stress from being concentrated on the partition wall.

【0069】この発明の静電隔壁の製造装置によれば、
装置を真空容器内に設置するので、ボイドやピンホール
のない接合率の高い接合をすることができ、さらに、熱
膨張によって発生する熱応力を除去できる効果がある。
According to the electrostatic barrier manufacturing apparatus of the present invention,
Since the apparatus is installed in a vacuum container, it is possible to perform bonding with a high bonding rate without voids and pinholes, and further it is possible to remove the thermal stress generated by thermal expansion.

【図面の簡単な説明】[Brief description of drawings]

【図1】 この発明の実施の形態1による静電偏向器の
静電隔壁を示す斜視図である。
FIG. 1 is a perspective view showing an electrostatic partition wall of an electrostatic deflector according to a first embodiment of the present invention.

【図2】 この発明の実施の形態1による静電偏向器の
静電隔壁を真空容器内で作成する場合を説明する斜視図
である。
FIG. 2 is a perspective view illustrating a case where the electrostatic partition of the electrostatic deflector according to the first embodiment of the present invention is formed in a vacuum container.

【図3】 この発明の実施の形態2による静電隔壁の製
造装置の構成を示す図で、(a)は上面図、(b)は
(a)のA−A線に沿った断面図である。
3A and 3B are diagrams showing a configuration of an electrostatic partition manufacturing apparatus according to Embodiment 2 of the present invention, in which FIG. 3A is a top view and FIG. 3B is a sectional view taken along line AA of FIG. is there.

【図4】 この発明の実施の形態2による静電隔壁の製
造装置の他の構成を示す図で、(a)は上面図、(b)
は(a)のB−B線に沿った断面図である。
4A and 4B are views showing another configuration of the electrostatic partition manufacturing apparatus according to the second embodiment of the present invention, in which FIG. 4A is a top view and FIG.
FIG. 7A is a sectional view taken along line BB in FIG.

【図5】 この発明の実施の形態3による静電偏向器の
静電隔壁の隔壁部となる薄板11の前処理を説明する斜
視図である。
FIG. 5 is a perspective view for explaining a pretreatment of a thin plate 11 to be a partition of an electrostatic partition of an electrostatic deflector according to a third embodiment of the present invention.

【図6】 この発明の実施の形態4による静電偏向器の
静電隔壁の作成過程を示す説明図である。
FIG. 6 is an explanatory diagram showing a process of forming an electrostatic partition of an electrostatic deflector according to a fourth embodiment of the present invention.

【図7】 「第11回加速器科学シンポジウムプロシー
ディング(1997)p.59−61」に示された従来
の静電偏向器の構成を示す図である。
FIG. 7 is a diagram showing a configuration of a conventional electrostatic deflector shown in “11th Accelerator Science Symposium Proceeding (1997) p. 59-61”.

【図8】 従来例1の静電偏向器を出射装置に使用した
場合の荷電粒子の偏向動作を模式的に表した模式図であ
る。
FIG. 8 is a schematic diagram schematically showing a deflection operation of charged particles when the electrostatic deflector of Conventional Example 1 is used in an emission device.

【図9】 従来例1の静電偏向器を入射装置に使用した
場合の荷電粒子の偏向動作を模式的に表した模式図であ
る。
FIG. 9 is a schematic diagram schematically showing a deflection operation of charged particles when the electrostatic deflector of Conventional Example 1 is used in an incident device.

【図10】 従来の他の静電偏向器の構成を示す図であ
る。
FIG. 10 is a diagram showing a configuration of another conventional electrostatic deflector.

【符号の説明】[Explanation of symbols]

10,10’ セプタム電極(静電隔壁)、11 薄板
(隔壁部)、11a,81a 隔壁部、12,13,8
2a,82b 支持補強板(補強部)、14,14’
ろう材(金属又は合金)、21,73 真空炉(真空容
器)、31,32,33 可動ベース(ベース台)、3
4 ベース台、36,37 位置決め用ピン(位置決め
部)、61,62,63 おもり(応力除去用おも
り)、71おもり(ベース板)、72 ベース台(ベー
ス板)、81 板部材(隔壁部)、82 板部材(高加
工性部材)。
10, 10 'Septum electrode (electrostatic partition), 11 Thin plate (partition part), 11a, 81a Partition part, 12, 13, 8
2a, 82b Support reinforcing plate (reinforcing part), 14, 14 '
Brazing material (metal or alloy), 21,73 vacuum furnace (vacuum container), 31, 32, 33 movable base (base stand), 3
4 base stand, 36, 37 positioning pin (positioning part), 61, 62, 63 weight (stress removing weight), 71 weight (base plate), 72 base stand (base plate), 81 plate member (partition wall part) , 82 Plate member (highly workable member).

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平9−222524(JP,A) 特開 平9−53112(JP,A) 特開 平4−187371(JP,A) 特開 平3−204170(JP,A) 実開 昭62−112899(JP,U) 実開 昭61−11300(JP,U) 実開 平4−43900(JP,U) 実開 平6−79138(JP,U) (58)調査した分野(Int.Cl.7,DB名) G21K 1/00 H05H 13/00 H05H 7/00 ─────────────────────────────────────────────────── --Continued from the front page (56) References JP-A-9-222524 (JP, A) JP-A-9-53112 (JP, A) JP-A-4-187371 (JP, A) JP-A-3- 204170 (JP, A) Actually open 62-112899 (JP, U) Actually open 61-11300 (JP, U) Actually open 4-43900 (JP, U) Actually open 6-79138 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) G21K 1/00 H05H 13/00 H05H 7/00

Claims (8)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 静電隔壁と、該静電隔壁と対向して配置
した対向電極とを備え、上記静電隔壁と上記対向電極と
の間に発生する電場によって荷電粒子を偏向し、上記静
電隔壁を介して二つの荷電粒子軌道を分離若しくは融合
する静電偏向器において、 上記静電隔壁は、上記荷電粒子の進行を妨げない厚さを
有するタングステンの隔壁部と、該隔壁部の両端部に接
合され、上記静電隔壁と上記対向電極との間の電場によ
り生じる電磁気力で上記隔壁部が変形しないように補強
するタングステンの補強部とからなり、前記静電隔壁
は、前記隔壁部と前記補強部との継手間隙に金属又は合
金を溶融・流入させて接合することを特徴とする静電偏
向器。
1. An electrostatic partition wall and a counter electrode arranged to face the electrostatic partition wall, wherein charged particles are deflected by an electric field generated between the electrostatic partition wall and the counter electrode, In an electrostatic deflector that separates or fuses two orbits of charged particles via a partition wall, the electrostatic partition wall is a tungsten partition wall having a thickness that does not hinder the progress of the charged particles, and both ends of the partition wall. is joined to the section consists of a reinforcing portion of the tungsten the partition wall in an electromagnetic force generated by the electric field is reinforced so as not to deform between the electrostatic barrier ribs and the counter electrode, the electrostatic septum
Is made of metal or metal in the joint gap between the partition wall and the reinforcement.
An electrostatic deflector characterized by melting and inflowing gold for joining .
【請求項2】 静電隔壁は、隔壁部の長手方向の両端部
に補強部を接合し、上記隔壁部の短手方向が荷電粒子の
進行方向側となるようにすることを特徴とする請求項1
記載の静電偏向器。
2. The electrostatic partition is characterized in that reinforcing portions are joined to both ends of the partition in the longitudinal direction so that the lateral direction of the partition is on the advancing direction side of the charged particles. Item 1
The electrostatic deflector described.
【請求項3】 静電隔壁は、隔壁部と補強部との接合を
真空容器内で行うことを特徴とする請求項記載の静電
偏向器。
3. The electrostatic deflector according to claim 1 , wherein the electrostatic partition is formed by joining the partition and the reinforcing section in a vacuum container.
【請求項4】 静電隔壁は、隔壁部と高加工性部材とを
接合し、上記高加工性部材を加工して補強部を形成する
ことを特徴とする請求項1記載の静電偏向器。
4. The electrostatic deflector according to claim 1, wherein the electrostatic partition wall is formed by joining the partition wall portion and the high workability member and processing the high workability member to form a reinforcing portion. .
【請求項5】 接合する部材を平面度の高いベース板に
挟持させ、接合前に該部材を真空容器内で加熱すること
を特徴とする請求項1から請求項のうちいずれか1項
記載の静電偏向器。
5. The member to be joined is sandwiched between base plates having high flatness, and the member is heated in a vacuum vessel before joining, according to any one of claims 1 to 4. Electrostatic deflector.
【請求項6】 隔壁部と、該隔壁部の両端部に接合する
補強部とからなる静電隔壁の製造装置において、 上記隔壁部と上記補強部との接合を行う各々分割された
ベース台と、該ベース台上に設けた上記隔壁部と上記補
強部との接合位置を固定する位置決め部とを備え、 上記隔壁部及び上記補強部は、継手間隙に金属又は合金
を溶融・流入させて接合し、上記ベース台は、上記隔壁
部及び上記補強部の加熱時に上記両部の熱膨張に合わせ
硬球により移動する静電隔壁の製造装置。
6. A partition wall, in the manufacturing apparatus of an electrostatic barrier rib comprising a reinforcing portion joined to the opposite ends of the partition wall portion, which is respectively divided perform bonding between the partition wall and the reinforcing portion <br / > A base table and a positioning section for fixing the joining position of the partition section and the reinforcing section provided on the base table, and the partition section and the reinforcing section melt the metal or alloy in the joint gap. An apparatus for manufacturing an electrostatic partition, which is made to flow and bond, and the base table is moved by hard balls in accordance with thermal expansion of both the partition section and the reinforcing section when the partition section and the reinforcing section are heated.
【請求項7】 隔壁部上に応力除去用おもりを配置する
ことを特徴とする請求項記載の静電隔壁の製造装置。
7. The electrostatic partition manufacturing apparatus according to claim 6 , wherein a stress removing weight is arranged on the partition part.
【請求項8】 装置を真空容器内に設置することを特徴
とする請求項記載の静電隔壁の製造装置。
8. The apparatus for manufacturing an electrostatic partition according to claim 7, wherein the apparatus is installed in a vacuum container.
JP23165699A 1999-08-18 1999-08-18 Electrostatic deflector and electrostatic bulkhead manufacturing apparatus Expired - Lifetime JP3532468B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23165699A JP3532468B2 (en) 1999-08-18 1999-08-18 Electrostatic deflector and electrostatic bulkhead manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23165699A JP3532468B2 (en) 1999-08-18 1999-08-18 Electrostatic deflector and electrostatic bulkhead manufacturing apparatus

Publications (2)

Publication Number Publication Date
JP2001057300A JP2001057300A (en) 2001-02-27
JP3532468B2 true JP3532468B2 (en) 2004-05-31

Family

ID=16926923

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP3532468B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4790823B2 (en) * 2009-02-12 2011-10-12 住友重機械工業株式会社 Deflector

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