JP3520024B2 - Method and apparatus for manufacturing organic electroluminescent element - Google Patents
Method and apparatus for manufacturing organic electroluminescent elementInfo
- Publication number
- JP3520024B2 JP3520024B2 JP2000096768A JP2000096768A JP3520024B2 JP 3520024 B2 JP3520024 B2 JP 3520024B2 JP 2000096768 A JP2000096768 A JP 2000096768A JP 2000096768 A JP2000096768 A JP 2000096768A JP 3520024 B2 JP3520024 B2 JP 3520024B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- organic
- vacuum
- wafer
- working
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005401 electroluminescence Methods 0.000 claims description 49
- 230000001681 protective effect Effects 0.000 claims description 15
- 239000002356 single layer Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 29
- 238000007740 vapor deposition Methods 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- -1 aromatic tertiary amines Chemical class 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000000434 metal complex dye Substances 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- YACSIMLPPDISOJ-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-(3-methylphenyl)-n-phenylaniline Chemical group CC1=CC=CC(C=2C(=CC=C(NC=3C=CC=CC=3)C=2)C=2C=CC(NC=3C=CC=CC=3)=CC=2)=C1 YACSIMLPPDISOJ-UHFFFAOYSA-N 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229940027991 antiseptic and disinfectant quinoline derivative Drugs 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004104 aryloxy group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 150000003252 quinoxalines Chemical class 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機エレクトロルミ
ネセンス（ＥＬ）素子の製造方法及びその装置に係り、
特に有機エレクトロルミネセンス素子の製造に際し、基
板上に透明電極を形成した後の工程から保護膜形成の工
程までを、外気の酸化雰囲気から隔離して連続して真空
室中に行い、保護膜形成後、外気中に取出すようにした
ものに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic electroluminescence (EL) device and an apparatus therefor,
Especially when manufacturing an organic electroluminescent device, the process after forming the transparent electrode on the substrate to the process for forming the protective film is continuously performed in a vacuum chamber, isolated from the oxidizing atmosphere of the outside air, to form the protective film. Later, it relates to the one that was taken out into the open air.
【０００２】[0002]
【従来の技術】有機ＥＬ素子は、薄形の新しい発光源と
して注目されている。従来有機ＥＬ素子を製造するため
に、図４に示す如く、ガラス基板３０上にＩＴＯの如き
透明電極３１を蒸着又はスパッタリングにより形成して
これをパターニングしたあと、真空室にこの透明電極３
１の形成された基板を配置して透明電極３１の上に、正
孔注入輸送層３２、発光層３３、電子注入輸送層３４、
陰極３５、Ｓｉ層３６、保護膜３７を蒸着させたり、あ
るいはスパッタリングにより順次形成していた。2. Description of the Related Art Organic EL devices have been attracting attention as new thin light emitting sources. In order to manufacture a conventional organic EL device, as shown in FIG. 4, a transparent electrode 31 such as ITO is formed on a glass substrate 30 by vapor deposition or sputtering and patterned, and then the transparent electrode 3 is placed in a vacuum chamber.
The substrate on which No. 1 is formed is arranged and on the transparent electrode 31, a hole injecting and transporting layer 32, a light emitting layer 33, an electron injecting and transporting layer 34,
The cathode 35, the Si layer 36, and the protective film 37 were sequentially formed by vapor deposition or sputtering.
【０００３】[0003]
【発明が解決しようとする課題】従って、正孔注入輸送
層３２、発光層３３、電子注入輸送層３４、陰極３５、
Ｓｉ層３６、保護膜３７を形成するために、その度に真
空室を常圧に戻してそれぞれの工程に適した材料を入
れ、真空にしたあと蒸着あるいはスパッタリングさせる
ことが必要であった。Therefore, the hole injecting and transporting layer 32, the light emitting layer 33, the electron injecting and transporting layer 34, the cathode 35,
In order to form the Si layer 36 and the protective film 37, it was necessary to return the vacuum chamber to a normal pressure each time, put in a material suitable for each step, and after vacuuming, vapor deposition or sputtering.
【０００４】そのため、各工程の度に常圧に戻すことが
必要となり酸化雰囲気に露出されたり、製造時間が長く
なるという欠点があった。Therefore, it is necessary to return the pressure to normal pressure after each process, and there are drawbacks that it is exposed to an oxidizing atmosphere and the manufacturing time becomes long.
【０００５】従って本発明の目的は、前記各工程毎に一
旦常圧に戻す必要のない有機ＥＬ素子の製造方法及びそ
の装置を提供することである。Therefore, it is an object of the present invention to provide a method of manufacturing an organic EL element and an apparatus therefor which do not need to return to normal pressure once in each of the above steps.
【０００６】[0006]
【課題を解決するための手段】前記目的を達成するた
め、本発明では、図１に示す如く、中空柱状の真空槽１
に、基板挿入取出部１０と、複数の作業用真空室１１〜
１６を円周上に配置する。そして真空槽１の中央部分に
は、ロボット２を設置する。ロボット２には、上下左右
方向に伸縮回転可能に構成された例えば３本のアーム２
−１、２−２、２−３が設けられ、そのアーム２−３の
先端には先端保持部３が形成されている。In order to achieve the above object, in the present invention, as shown in FIG. 1, a hollow columnar vacuum chamber 1 is used.
In addition, the substrate insertion / extraction unit 10 and the plurality of work vacuum chambers 11 to 11
Place 16 on the circumference. The robot 2 is installed in the center of the vacuum chamber 1. The robot 2 includes, for example, three arms 2 configured to be capable of extending and contracting in the vertical and horizontal directions.
-1, 2-2, 2-3 are provided, and the tip holding part 3 is formed at the tip of the arm 2-3.
【０００７】作業用真空室１１〜１６は蒸着室あるいは
スパッタリング室として構成される。蒸着室は、図１
（Ｂ）に断面が示されるように、支持基部６、加熱部
７、蒸着源１７等が備えられ、支持基部６上に、後述す
るように載置された有機ＥＬウェーハ４に蒸着源からの
物質が被膜される。スパッタリング室は、図１（Ｃ）に
断面が示されるように、支持基部６と電極１８、ターゲ
ット１９が用意され、電極１８には高周波源８が接続さ
れる。The working vacuum chambers 11 to 16 are configured as vapor deposition chambers or sputtering chambers. The deposition chamber is shown in Figure 1.
As shown in the cross section in (B), a support base 6, a heating unit 7, a vapor deposition source 17 and the like are provided, and an organic EL wafer 4 mounted on the support base 6 as described later is separated from the vapor deposition source. The substance is coated. As shown in the sectional view of FIG. 1C, the sputtering chamber is provided with a support base 6, an electrode 18, and a target 19, and a high frequency source 8 is connected to the electrode 18.
【０００８】（作用）先ず、ガラス基板に透明電極を形
成してこれをパターニングした有機ＥＬウェーハ４を後
述する保持板に保持させたあと、これを基板挿入取出部
１０を開き、真空室１１内のロボット２の先端保持部３
に保持させる。このようにして有機ＥＬウェーハ４を保
持させたあと、これを真空槽１内に入れ、真空にする。(Operation) First, a transparent electrode is formed on a glass substrate, and an organic EL wafer 4 patterned by holding the transparent electrode is held on a holding plate which will be described later. Tip holding part 3 of robot 2
To hold. After the organic EL wafer 4 is held in this way, it is placed in the vacuum chamber 1 and evacuated.
【０００９】それから作業用真空室１１のゲートバルブ
２０を開き、有機ＥＬウェーハ４をその支持基部６に保
持させて正孔注入輸送層を蒸着させる。次にロボット２
はこの有機ＥＬウェーハ４を作業用真空室１２の支持基
部６に保持させ、発光層を蒸着させる。このようにして
作業用真空室１３にて電子注入輸送層を蒸着し、作業用
真空室１４にて陰極を蒸着し、作業用真空室１５にてＳ
ｉ層をスパッタリングし、作業用真空室１６にて保護膜
をスパッタリングで形成したあと、真空槽１を常圧に戻
し、基板挿入取出部１０から有機ＥＬ素子を取出すこと
ができる。Then, the gate valve 20 of the working vacuum chamber 11 is opened to hold the organic EL wafer 4 on its supporting base 6 and deposit the hole injecting and transporting layer. Next robot 2
Holds the organic EL wafer 4 on the support base 6 of the work vacuum chamber 12 and deposits a light emitting layer. In this way, the electron injecting and transporting layer is deposited in the working vacuum chamber 13, the cathode is deposited in the working vacuum chamber 14, and the S is deposited in the working vacuum chamber 15.
After the i layer is sputtered and a protective film is formed in the working vacuum chamber 16 by sputtering, the vacuum chamber 1 is returned to normal pressure, and the organic EL element can be taken out from the substrate insertion / ejection section 10.
【００１０】[0010]
【発明の実施の形態】本発明の一実施の形態を図１、図
２及び図４にもとづき説明する。図１は本発明の一実施
例構成図、図２は本発明の作業用真空室とロボット２の
先端保持部３の要部説明図、図４は有機ＥＬ素子の構成
を示す。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIGS. 1, 2 and 4. FIG. 1 is a configuration diagram of an embodiment of the present invention, FIG. 2 is an explanatory diagram of a main part of a working vacuum chamber of the present invention and a tip holding portion 3 of a robot 2, and FIG. 4 is a configuration of an organic EL element.
【００１１】先ず図４により有機ＥＬ素子の製法につい
て説明する。First, a method of manufacturing an organic EL element will be described with reference to FIG.
【００１２】透明電極３１は陽極となるものであって例
えばＩＴＯ等で構成され、ガラス基板３０上に蒸着又は
スパッタリングにより成膜されたあとパターニングされ
て所定の形状に整形されたもの、あるいはマスタパター
ニングされて所定の形状に成膜されたものである。The transparent electrode 31 serves as an anode, and is made of, for example, ITO. The transparent electrode 31 is formed on the glass substrate 30 by vapor deposition or sputtering and then patterned to be shaped into a predetermined shape, or master patterning. Then, the film is formed into a predetermined shape.
【００１３】正孔注入輸送層３２は、例えば下記化１で
表されるテトラアリールジアミン誘導体が使用される。For the hole injecting and transporting layer 32, for example, a tetraaryldiamine derivative represented by the following chemical formula 1 is used.
【００１４】[0014]
【化１】 [Chemical 1]
【００１５】〔化１において、Ｒ1 、Ｒ2 、Ｒ3 及びＲ
4 はそれぞれアリール基、アルキル基、アルコキシ基、
アリールオキシ基、アミノ基、又はハロゲン原子を表
す。ｒ１、ｒ２、ｒ３及びｒ４は、それぞれ０又は１〜
５の整数である。Ｒ5 及びＲ6は、アルキル基、アルコ
キシ基、アミノ基、又はハロゲン原子を表し、これらは
同一でも異なるものであってもよい。ｒ５及びｒ６は、
それぞれ０又は１〜４の整数である。〕
この化１に限定されず、例えば下記化２で表されるＮ、
Ｎ′−ジ（３−メチルフェニル）−Ｎ、Ｎ′−ジフェニ
ル−４、４′−ジアミノ−１、１′ビフェニルを蒸着す
ることにより形成したものを正孔注入輸送層３２として
使用することもできる。[In Chemical Formula 1, R 1 , R 2 , R 3 and R
4 is an aryl group, an alkyl group, an alkoxy group,
It represents an aryloxy group, an amino group, or a halogen atom. r1, r2, r3 and r4 are each 0 or 1 to
It is an integer of 5. R 5 and R 6 represent an alkyl group, an alkoxy group, an amino group, or a halogen atom, and these may be the same or different. r5 and r6 are
Each is an integer of 0 or 1 to 4. Not limited to this chemical formula 1, for example, N represented by the following chemical formula 2,
The hole injecting and transporting layer 32 may be formed by depositing N'-di (3-methylphenyl) -N, N'-diphenyl-4,4'-diamino-1,1'biphenyl. it can.
【００１６】[0016]
【化２】 [Chemical 2]
【００１７】この外、芳香族三級アミン、ヒドラゾン誘
導体、カルバゾール誘導体、トリアゾール誘導体、イミ
ダゾール誘導体、アミノ基を有するオキサジアゾール誘
導体、ポリチオフェン等が使用できる。In addition to these, aromatic tertiary amines, hydrazone derivatives, carbazole derivatives, triazole derivatives, imidazole derivatives, oxadiazole derivatives having an amino group, polythiophene and the like can be used.
【００１８】発光層３３は、トリス（８−キノリノラ
ト）アルミニウム等の金属錯体色素、テトラフェニルブ
タジェン、アントラセン、ペリレン、コロネン、１２−
フタロペリノン誘導体、キナクリドン、ルブレン、スチ
リル系色素等の有機蛍光体や、前記正孔注入輸送層３２
を構成する例えば化１で表されるテトラアリールジアミ
ン誘導体と、後述する電子注入輸送層３４を構成する例
えばトリス（８−キノリノラト）アルミニウムとの混合
物が使用される。この場合、異なる蒸着源より蒸発させ
る共蒸着が好ましいが、これに限定されるものではな
い。勿論蛍光性物質を含ませることもできる。The light emitting layer 33 includes a metal complex dye such as tris (8-quinolinolato) aluminum, tetraphenyl butadiene, anthracene, perylene, coronene, 12-.
Organic phosphors such as a phthaloperinone derivative, quinacridone, rubrene, and styryl dye, and the hole injecting and transporting layer 32.
A mixture of, for example, the tetraaryldiamine derivative represented by Chemical formula 1 and, for example, tris (8-quinolinolato) aluminum, which constitutes the electron injecting and transporting layer 34 described later, is used. In this case, co-evaporation in which evaporation is performed from different evaporation sources is preferable, but the invention is not limited to this. Of course, a fluorescent substance can be included.
【００１９】電子注入輸送層３４は、例えばトリス（８
−キノリノラト）アルミニウム等の金属錯体色素、オキ
サジアゾール誘導体、ペリレン誘導体、ピリジン誘導
体、ピリミジン誘導体、キノリン誘導体、キノキサリン
誘導体、ジフェニルキノン誘導体、ニトロ置換フルオロ
レン誘導体等を蒸着することにより形成される。The electron injecting and transporting layer 34 is, for example, tris (8
-Quinolinolato) aluminum and other metal complex dyes, oxadiazole derivatives, perylene derivatives, pyridine derivatives, pyrimidine derivatives, quinoline derivatives, quinoxaline derivatives, diphenylquinone derivatives, nitro-substituted fluorolene derivatives and the like.
【００２０】陰極３５は、仕事関数の小さい材料例えば
Ｌｉ、Ｎａ、Ｍｇ、Ａｌ、Ａｇ、Ｉｎあるいはこれらの
１種以上を含む合金例えばＭｇＡｇ（例えば重量比１
０：１）、ＭｇＩｎ等で構成される。陰極３５は蒸着又
はスパッタリングにより成膜される。The cathode 35 is made of a material having a small work function such as Li, Na, Mg, Al, Ag, In or an alloy containing at least one of these materials such as MgAg (for example, a weight ratio of 1).
0: 1), MgIn, or the like. The cathode 35 is formed by vapor deposition or sputtering.
【００２１】Ｓｉ層３６は陰極３５をコーティングして
その酸化を防止するものであり、Ｓｉをスパッタリング
することで成膜される。The Si layer 36 is for coating the cathode 35 to prevent its oxidation, and is formed by sputtering Si.
【００２２】保護膜３７は陰極３５の酸化防止のみなら
ず、正孔注入輸送層３２〜電子注入輸送層３４の酸化を
防止し、有機ＥＬ素子が長時間発光できるようにするも
のであり、例えばＳｉＯ2 、Ｓｉ3 Ｎ4 等をスパッタリ
ングすることにより形成される。The protective film 37 not only prevents the oxidation of the cathode 35 but also prevents the oxidation of the hole injecting and transporting layer 32 to the electron injecting and transporting layer 34 so that the organic EL device can emit light for a long time. It is formed by sputtering SiO 2 , Si 3 N 4, or the like.
【００２３】本発明では、前記正孔注入輸送層３２〜保
護膜３７の形成を図１（Ａ）に示す作業用真空室１１〜
１６で順次行うものである。In the present invention, the formation of the hole injecting and transporting layer 32 to the protective film 37 is performed in the working vacuum chamber 11 to 11 shown in FIG.
16 sequentially.
【００２４】次に図１（Ａ）に示す本発明の製造装置に
ついて説明する。図１（Ａ）において、１は真空槽、２
はロボット、３は先端保持部、４は有機ＥＬウェーハ、
１０は基板挿入取出部、１１〜１６は作業用真空室、２
０はゲートバルブである。Next, the manufacturing apparatus of the present invention shown in FIG. 1 (A) will be described. In FIG. 1 (A), 1 is a vacuum chamber, 2
Is a robot, 3 is a tip holder, 4 is an organic EL wafer,
Reference numeral 10 is a board insertion / extraction unit, 11 to 16 are work vacuum chambers, 2
0 is a gate valve.
【００２５】真空槽１は、有機ＥＬ素子をガラス基板３
０に透明電極３１を形成したものから、正孔注入輸送層
３２、発光層３３、電子注入輸送層３４、陰極３５、Ｓ
ｉ層３６、保護膜３７を形成されるまでを連続的に行う
ものであり、内部にロボット２が設置され、また真空槽
１の周壁には作業用真空室１１〜１６が、クラスタ状に
配置されている。また真空槽１には基板挿入取出部１０
が形成されている。The vacuum chamber 1 includes an organic EL element and a glass substrate 3
0 to the transparent electrode 31 formed, the hole injecting and transporting layer 32, the light emitting layer 33, the electron injecting and transporting layer 34, the cathode 35, S
The i layer 36 and the protective film 37 are continuously formed, the robot 2 is installed inside, and the work vacuum chambers 11 to 16 are arranged in a cluster on the peripheral wall of the vacuum chamber 1. Has been done. In addition, the vacuum chamber 1 has a substrate insertion / ejection section 10
Are formed.
【００２６】ロボット２は、有機ＥＬウェーハ４を順次
作業用真空室１１〜１６に挿入し、取出すものであり、
例えば３本のアーム２−１、２−２、２−３を有する。
これらのアーム２−１〜２−３は、そのアーム２−３の
先端に形成された先端保持部３が上下左右の３６０°の
全方向に移動回転可能に構成されている。The robot 2 sequentially inserts the organic EL wafers 4 into the work vacuum chambers 11 to 16 and takes them out.
For example, it has three arms 2-1, 2-2, 2-3.
These arms 2-1 to 2-3 are configured such that a tip holding portion 3 formed at the tip of the arm 2-3 can move and rotate in all directions of 360 ° vertically and horizontally.
【００２７】先端保持部３は、有機ＥＬウェーハ４が保
持された保持板５を載置するものであり、その先端に
は、後述する支持基部６の穴部６−１、６−２に進入さ
れる突出部３−１、３−２が形成されている。The tip holding section 3 mounts a holding plate 5 holding the organic EL wafer 4, and the tip thereof enters into holes 6-1 and 6-2 of the support base 6 which will be described later. The protruding portions 3-1 and 3-2 are formed.
【００２８】有機ＥＬウェーハ４は、有機ＥＬ素子が製
造されるまでの中間体であり、図１（Ａ）に示す有機Ｅ
Ｌウェーハ４はガラス基板３０に透明電極３１がパター
ニング形成されたものであり、その後順次作業用真空室
１１〜１６で順次成膜されて、有機ＥＬ素子になるまで
の途中のものをいう。The organic EL wafer 4 is an intermediate product until an organic EL element is manufactured. The organic EL wafer 4 shown in FIG.
The L wafer 4 is formed by patterning the transparent electrode 31 on the glass substrate 30, and then is formed in the working vacuum chambers 11 to 16 one by one until it becomes an organic EL element.
【００２９】作業用真空室１１は、例えば正孔注入輸送
層３２を蒸着する、蒸着工程用の真空室であり、図１
（Ｂ）はそのＡ−Ａ線断面図である。この断面図に示さ
れるように作業用真空室１１には支持基部６、加熱部
７、蒸着源１７が具備されている。作業用真空室１１で
は正孔注入輸送層３２が蒸着されるので、この室の蒸着
源１７には前記化１あるいは化２で示されるものが使用
される。The working vacuum chamber 11 is a vacuum chamber for a vapor deposition process, for example, for vapor-depositing the hole injecting and transporting layer 32.
(B) is the sectional view on the AA line. As shown in this sectional view, the working vacuum chamber 11 is provided with a support base 6, a heating unit 7, and a vapor deposition source 17. Since the hole injecting and transporting layer 32 is vapor-deposited in the working vacuum chamber 11, the vapor deposition source 17 in this chamber is the one shown in Chemical formula 1 or Chemical formula 2 above.
【００３０】支持基部６は、有機ＥＬウェーハ４が保持
された先端保持板５が載置されるものであり、図２に示
す如く、穴部６−１、６−２が形成されている。図２の
状態において、ロボット２の先端保持部３が右方向に移
動し、その突出部３−１、３−２が穴部６−１、６−２
に進入する。このとき、突出部３−１、３−２の上面が
支持基部６の上面よりもわずかに高い状態で進入するの
で、保持板５はそのまま支持基部６上を移動する。そし
て所定の位置に進入したとき、先端保持部３が下降する
ので、保持板５は支持基部６上の所定の位置に載置され
る。The support base 6 is for mounting the tip holding plate 5 holding the organic EL wafer 4, and has holes 6-1 and 6-2 as shown in FIG. In the state shown in FIG. 2, the tip end holding portion 3 of the robot 2 moves to the right, and the protruding portions 3-1 and 3-2 have the hole portions 6-1 and 6-2.
Enter. At this time, since the upper surfaces of the protrusions 3-1 and 3-2 enter slightly higher than the upper surface of the support base 6, the holding plate 5 moves on the support base 6 as it is. Then, when entering the predetermined position, the tip holding portion 3 descends, so that the holding plate 5 is placed at the predetermined position on the support base 6.
【００３１】この状態で、ゲートバルブ２０を閉じ、加
熱部７に通電すれば、蒸着源１７が有機ＥＬウェーハ４
上に蒸着される。そして蒸着終了後、再びゲートバルブ
２０を開き、ロボット２の先端保持部３の上面が支持基
部６の上面よりも低い状態で突出部３−１、３−２が穴
部６−１、６−２に進入させ、所定の位置に進入したと
き、先端保持部３を若干上昇させる。これにより蒸着処
理された有機ＥＬウェーハ４が先端保持部３に再び載置
される。これを作業用真空室１１の外に移動し、次の作
業用真空室１２内の支持基部６上に同様に載置する。こ
のようにして順次作業用真空室における成膜処理を行う
ことができる。なお図２に示す如く、マスク９を設け、
マスク蒸着することもできる。In this state, when the gate valve 20 is closed and the heating part 7 is energized, the vapor deposition source 17 is set to the organic EL wafer 4
Deposited on top. Then, after the vapor deposition is completed, the gate valve 20 is opened again, and the protrusions 3-1 and 3-2 have the holes 6-1 and 6- with the upper surface of the tip holding unit 3 of the robot 2 lower than the upper surface of the support base 6. 2 and when it reaches a predetermined position, the tip holding portion 3 is slightly raised. As a result, the vapor-deposited organic EL wafer 4 is placed on the tip holding unit 3 again. This is moved to the outside of the work vacuum chamber 11 and similarly placed on the support base 6 in the next work vacuum chamber 12. Thus, the film forming process in the working vacuum chamber can be sequentially performed. A mask 9 is provided as shown in FIG.
Mask evaporation can also be performed.
【００３２】作業用真空室１２は発光層３３を蒸着する
ものであり、作業用真空室１３は電子注入輸送層３４を
蒸着するものであり、作業用真空室１４は陰極２５を蒸
着するものであるので、これらの各室は、前記作業用真
空室１１と同様に構成されている。The working vacuum chamber 12 is for depositing the light emitting layer 33, the working vacuum chamber 13 is for depositing the electron injecting and transporting layer 34, and the working vacuum chamber 14 is for depositing the cathode 25. Therefore, each of these chambers is configured similarly to the working vacuum chamber 11.
【００３３】作業用真空室１５は例えばＳｉ層３６をス
パッタリングにより形成するスパッタリング工程用の真
空室であり、図１（Ｃ）はそのＢ−Ｂ断面図である。こ
の断面図に示されるように、スパッタリング用の作業用
真空室１５でも、蒸着用の作業用真空室と同様に支持基
部６が設けられている。そしてその上方に電極１８が設
置され、その前面にターゲット１９が配置されている。
電極１８には高周波源８により高周波電圧が印加され、
室内に発生した高周波放電によりターゲットがスパッタ
リングされ、支持基部６上に載置された有機ＥＬウェー
ハ４上にＳｉ層３６が形成される。このとき室内にＡｒ
ガスが導入されスパッタを行う。The working vacuum chamber 15 is a vacuum chamber for a sputtering process for forming the Si layer 36 by sputtering, for example, and FIG. 1C is a sectional view taken along the line BB. As shown in this cross-sectional view, the work vacuum chamber 15 for sputtering is also provided with the support base 6 similarly to the work vacuum chamber for vapor deposition. Then, the electrode 18 is installed above it, and the target 19 is arranged on the front surface thereof.
A high frequency voltage is applied to the electrode 18 by a high frequency source 8,
The target is sputtered by the high frequency discharge generated in the chamber, and the Si layer 36 is formed on the organic EL wafer 4 mounted on the support base 6. At this time Ar in the room
Gas is introduced to perform sputtering.
【００３４】作業用真空室１６は、例えば保護膜３７を
スパッタリングにより形成するスパッタリング工程用の
真空室であり、前記作業用真空室１５と同様に構成され
ている。The working vacuum chamber 16 is a vacuum chamber for a sputtering process in which the protective film 37 is formed by sputtering, for example, and has the same construction as the working vacuum chamber 15.
【００３５】なお、前記作業用真空室１１〜１４及び作
業用真空室１５、１６は、真空槽１の周辺に設置され、
これらはいわゆるクラスター状に設置されている。The work vacuum chambers 11 to 14 and the work vacuum chambers 15 and 16 are installed around the vacuum chamber 1.
These are installed in what is called a cluster.
【００３６】最初にガラス基板３０に透明電極２１を形
成した有機ＥＬウェーハ４を保持板５に保持させ、これ
を基板挿入取出部１０の窓部より入れてロボット２の先
端保持部３上に載置する。それから各作業用真空室１１
〜１６のゲートバルブ２０を開き、真空槽１を図示省略
した真空ポンプにて排気する。First, the organic EL wafer 4 having the transparent electrode 21 formed on the glass substrate 30 is held by the holding plate 5, which is inserted from the window portion of the substrate insertion / extraction portion 10 and placed on the tip holding portion 3 of the robot 2. Place. Then each work vacuum chamber 11
The gate valves 20 to 16 are opened, and the vacuum chamber 1 is evacuated by a vacuum pump (not shown).
【００３７】そして所定の気圧に減圧されたとき、ロボ
ット２の先端保持部３を作業用真空室１１に挿入し、そ
の支持基部６上に有機ＥＬウェーハ４を保持した保持板
５を前記の如く載置したあと、そのゲートバルブ２０を
閉める。そして加熱部７を加熱し、蒸着源１７から正孔
注入輸送層３２を蒸着させる。When the pressure is reduced to a predetermined atmospheric pressure, the tip holding unit 3 of the robot 2 is inserted into the working vacuum chamber 11, and the holding plate 5 holding the organic EL wafer 4 on the supporting base 6 thereof is as described above. After mounting, the gate valve 20 is closed. Then, the heating unit 7 is heated to deposit the hole injecting and transporting layer 32 from the vapor deposition source 17.
【００３８】このようにして正孔注入輸送層３２が形成
された後、作業用真空室１１では、ゲートバルブ２０を
開き、ロボット２の先端保持部３を駆動して、それに正
孔注入輸送層３２が形成された有機ＥＬウェーハ４が保
持されている保持板５を、次に作業用真空室１２内の支
持基部６上に載置し、そのゲートバルブ２０を閉める。
そして加熱部７を加熱し、蒸着源１７から発光層３３を
蒸着させる。After the hole injecting and transporting layer 32 is formed in this way, in the working vacuum chamber 11, the gate valve 20 is opened and the tip holding portion 3 of the robot 2 is driven to form the hole injecting and transporting layer therein. The holding plate 5 holding the organic EL wafer 4 having the 32 formed thereon is then placed on the support base 6 in the working vacuum chamber 12, and the gate valve 20 is closed.
Then, the heating unit 7 is heated, and the light emitting layer 33 is vapor-deposited from the vapor deposition source 17.
【００３９】発光層３３が形成された後、作業用真空室
１２ではゲートバルブ２０を開き、ロボット２の先端保
持部３を駆動して、それに発光層３３が形成された有機
ＥＬウェーハ４が保持されている保持板５を、次の作業
用真空室１３内の支持基部６上に載置し、そのゲートバ
ルブ２０を閉める。そして加熱部７を加熱し、蒸着源１
７から電子注入輸送層３４を蒸着させる。After the light emitting layer 33 is formed, the gate valve 20 is opened in the working vacuum chamber 12 to drive the tip holding portion 3 of the robot 2 to hold the organic EL wafer 4 on which the light emitting layer 33 is formed. The holding plate 5 is placed on the support base 6 in the next working vacuum chamber 13, and the gate valve 20 is closed. Then, the heating unit 7 is heated to deposit the vapor deposition source 1
The electron injecting and transporting layer 34 is vapor-deposited from 7.
【００４０】このように電子注入輸送層３４が形成され
た後、作業用真空室１３ではゲートバルブ２０を開き、
ロボット２の先端保持部３を駆動して、それに電子注入
輸送層３４が形成された有機ＥＬウェーハ４が保持され
ている保持板５を、次の作業用真空室１４内の支持基部
６上に載置し、そのゲートバルブ２０を閉める。そして
加熱部７を加熱し、蒸着源１７から陰極３５を蒸着させ
る。After the electron injecting and transporting layer 34 is thus formed, the gate valve 20 is opened in the working vacuum chamber 13,
The holding plate 5 holding the organic EL wafer 4 having the electron injecting and transporting layer 34 formed thereon is driven on the support base 6 in the next working vacuum chamber 14 by driving the tip holding unit 3 of the robot 2. Place and close the gate valve 20. Then, the heating unit 7 is heated and the cathode 35 is vapor-deposited from the vapor deposition source 17.
【００４１】陰極３５が形成された後、作業用真空室１
４ではゲートバルブ２０を開き、ロボット２の先端保持
部３を駆動して、それに陰極３５が形成された有機ＥＬ
ウェーハ４が保持されている保持板５を、次の作業用真
空室１５内の支持基部６上に載置し、そのゲートバルブ
２０を閉める。そして電極１８に高周波源８より高周波
を印加し、高周波放電を発生させ、ターゲット１９をス
パッタして有機ＥＬウェーハ４上にＳｉ層３６が形成さ
れる。After the cathode 35 is formed, the working vacuum chamber 1
At 4, the gate valve 20 is opened, the tip holding portion 3 of the robot 2 is driven, and the cathode 35 is formed on it.
The holding plate 5 holding the wafer 4 is placed on the support base 6 in the next working vacuum chamber 15, and the gate valve 20 is closed. Then, a high frequency is applied to the electrode 18 from the high frequency source 8 to generate a high frequency discharge, and the target 19 is sputtered to form the Si layer 36 on the organic EL wafer 4.
【００４２】Ｓｉ層３６が形成された後、作業用真空室
１５ではゲートバルブ２０を開き、ロボット２の先端保
持部３を駆動して、それにＳｉ層３６が形成された有機
ＥＬウェーハ４が保持されている保持板５を、次の作業
用真空室１６内の支持基部６上に載置し、そのゲートバ
ルブ２０を閉める。そして電極１８に高周波源８より高
周波を印加し、高周波放電を発生させ、ターゲット１９
をスパッタして有機ＥＬウェーハ４上に保護膜３７を形
成する。After the Si layer 36 is formed, the gate valve 20 is opened in the working vacuum chamber 15 to drive the tip holding unit 3 of the robot 2 to hold the organic EL wafer 4 having the Si layer 36 formed thereon. The holding plate 5 is placed on the support base 6 in the next working vacuum chamber 16, and the gate valve 20 is closed. Then, a high frequency is applied to the electrode 18 from the high frequency source 8 to generate a high frequency discharge, and a target 19 is generated.
Is sputtered to form a protective film 37 on the organic EL wafer 4.
【００４３】このように保護膜３７が形成された後、作
業用真空室１６ではゲートバルブ２０を開き、ロボット
２の先端保持部３を駆動して、それに保護膜３７が形成
された有機ＥＬ素子を保持されている保持板５を基板挿
入取出部１０に駆動させる。そして真空槽１内を常圧に
戻し、図示省略した窓部を開いて有機ＥＬ素子を取出
す。After the protective film 37 is thus formed, the gate valve 20 is opened in the working vacuum chamber 16 to drive the tip holding portion 3 of the robot 2 to drive the organic EL element having the protective film 37 formed thereon. The holding plate 5 holding the substrate is driven by the substrate insertion / extraction unit 10. Then, the inside of the vacuum chamber 1 is returned to normal pressure, a window (not shown) is opened, and the organic EL element is taken out.
【００４４】なお、前記説明では、支持基部６を各作業
用真空室の下に位置した例について説明したが、本発明
はこれに限定されるものではなく、図３（Ａ）に蒸着用
の作業用真空室１１′として代表的に示す如く、蒸着用
の加熱部７、蒸着源１７を下方におき、支持基部６を上
方においてもよい。同様に図３（Ｂ）に示す如く、スパ
ッタリング用の作業用真空室１５′としては、電極１８
やターゲット１９を下方におき支持基部６を上方におい
てもよい。In the above description, an example in which the support base 6 is located under each work vacuum chamber has been described, but the present invention is not limited to this, and FIG. As typically shown as the working vacuum chamber 11 ', the heating unit 7 for vapor deposition and the vapor deposition source 17 may be placed below and the support base 6 may be placed above. Similarly, as shown in FIG. 3B, the electrode 18 is used as the working vacuum chamber 15 'for sputtering.
Alternatively, the target 19 may be placed below and the support base 6 may be placed above.
【００４５】このとき、当然のことながら有機ＥＬウェ
ーハ４は蒸着源１７あるいはターゲット１９側に面して
いる。そして支持基部６には、この有機ＥＬウェーハ４
の載置部分の下方に穴部が形成されている。At this time, as a matter of course, the organic EL wafer 4 faces the vapor deposition source 17 or the target 19 side. The organic EL wafer 4 is attached to the support base 6.
A hole is formed below the mounting portion of.
【００４６】前記実施例では、有機ＥＬ素子として正孔
注入輸送層、発光層、電子注入輸送層の３層構成の有機
ＥＬ素子例について説明したが本発明は勿論これに限定
されるものではない。例えば正孔注入輸送層・発光層＋
電子注入輸送層、正孔注入輸送層＋電子注入輸送層・発
光層の如きものに対しても同様に適用できる。また１つ
の電子注入層が発光層及び正孔注入層を兼ねる場合も本
発明に含まれるものである。In the above embodiment, an example of an organic EL device having a three-layer structure of a hole injecting / transporting layer, a light emitting layer and an electron injecting / transporting layer was described as an organic EL device, but the present invention is not limited to this. . For example, hole injection transport layer / light emitting layer +
The same applies to the electron injecting / transporting layer, the hole injecting / transporting layer + the electron injecting / transporting layer, and the light emitting layer. In addition, the case where one electron injection layer also serves as the light emitting layer and the hole injection layer is also included in the present invention.
【００４７】また作業用真空室の配置は、その作業順に
従って左廻りに配置した例について説明したが、作業用
真空室の配置は作業順に限定されるものではなく、任意
に配置できる。この場合、ロボット２の有機ＥＬウェー
ハの駆動先が作業順に従って行われることになる。勿論
作業順は右廻りでもよい。The arrangement of the work vacuum chambers has been described with respect to the counterclockwise arrangement according to the work order, but the work vacuum chambers are not limited to the work order and may be arranged arbitrarily. In this case, the driving destination of the organic EL wafer of the robot 2 is performed according to the work order. Of course, the work order may be clockwise.
【００４８】作業用真空室の数も、図１（Ａ）に示すも
のに限定されるものではなく、例えば層数の増加などに
より工程数が増加すればこれに応じて増加することがで
きる。The number of working vacuum chambers is not limited to that shown in FIG. 1A, and can be increased in accordance with an increase in the number of steps due to, for example, an increase in the number of layers.
【００４９】前記説明では陰極上にＳｉ膜を成膜したも
のに対してその上に保護膜を形成する場合について説明
したが本発明はこれに限定されるものではなく、他のも
のについても勿論適用できる。In the above description, the case where the Si film is formed on the cathode and the protective film is formed on the Si film is explained, but the present invention is not limited to this, and other ones can be used. Applicable.
【００５０】[0050]
【発明の効果】請求項１に記載された本発明によれば、
真空を破らない、いわゆるクラスタツール方式で有機Ｅ
Ｌ素子を製造するので、一度真空にすれば工程が終わる
までこれを保持すればよく、工程毎に真空状態にする必
要がないので効率的である。しかも保護膜を形成したあ
とで大気中に取出すので、各層が酸化雰囲気に露出され
ることがないので、各層が酸化されないため、発光寿命
の長いものを提供することができる。According to the present invention described in claim 1,
Organic E by the so-called cluster tool method that does not break the vacuum
Since the L element is manufactured, it is efficient because once it is evacuated, it can be held until the process is completed, and it is not necessary to make a vacuum state for each process. In addition, since the protective film is formed and then taken out into the air, each layer is not exposed to the oxidizing atmosphere, and therefore each layer is not oxidized, so that the one having a long emission life can be provided.
【００５１】請求項２に記載された本発明によれば各作
業用真空室は個別の膜を形成するので、高価な有機ＥＬ
材料を作業用真空室より回収して再利用することができ
る。According to the present invention described in claim 2, since each working vacuum chamber forms an individual film, an expensive organic EL device is used.
The material can be recovered from the working vacuum chamber and reused.
【００５２】請求項３に記載された本発明によれば各作
業用真空室に自動的に有機ＥＬウェーハを搬送して成膜
し、極めて効率良く有機ＥＬ素子を製造することができ
る。According to the third aspect of the present invention, the organic EL wafer can be automatically conveyed to each work vacuum chamber to form a film, and the organic EL element can be manufactured extremely efficiently.
【図１】本発明の一実施例構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】作業用真空室の要部説明図である。FIG. 2 is an explanatory view of a main part of a work vacuum chamber.
【図３】本発明の他の実施例である。FIG. 3 is another embodiment of the present invention.
【図４】有機ＥＬ素子の１例である。FIG. 4 is an example of an organic EL element.
１ 真空槽 ２ ロボット ３ 先端保持部 ４ 有機ＥＬウェーハ ５ 保持板 ６ 支持基部 ７ 加熱部 ８ 高周波源 ９ マスク １０ 基板挿入取出部 １１〜１６ 作業用真空室 １７ 蒸着源 １８ 電極 １９ ターゲット ２０ ゲートバルブ 1 vacuum tank 2 robots 3 Tip holding part 4 Organic EL wafer 5 holding plate 6 Support base 7 heating section 8 high frequency source 9 mask 10 Board insertion / ejection section 11-16 Work vacuum chamber 17 evaporation source 18 electrodes 19 targets 20 gate valve
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−36475（ＪＰ，Ａ) 特開 平６−231881（ＪＰ，Ａ) 特開 平５−98434（ＪＰ，Ａ) 特開 平６−104178（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H05B 33/00 - 33/28 ─────────────────────────────────────────────────── --- Continuation of front page (56) References JP-A-5-36475 (JP, A) JP-A-6-231881 (JP, A) JP-A-5-98434 (JP, A) JP-A-6- 104178 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H05B 33/00-33/28
Claims (3)
くとも一部の複数の層状部分を、真空槽の周辺に形成さ
れた複数の作業用真空室において順次成膜し、保護膜の
形成後に外部に取出すようにすることにより、一度真空
にして工程が終わるまで真空状態を保持して工程毎に真
空状態にする必要がないことを特徴とする有機エレクト
ロルミネセンス素子の製造方法。1. A plurality of layered portions of at least a part of an organic electroluminescence element are sequentially formed in a plurality of work vacuum chambers formed around a vacuum chamber, and taken out to the outside after forming a protective film. Once by vacuum
Keep the vacuum state until the end of the process and keep true for each process.
A method for manufacturing an organic electroluminescent device, which is characterized in that it is not necessary to make it empty .
と、この真空槽の周囲に、有機エレクトロルミネセンス
素子を構成する層状部分を形成する複数の作業用真空室
を設け、 前記作業用真空室において一度真空にして工程が終わる
まで真空状態を保持して、工程毎に真空状態にする必要
なく有機エレクトロルミネセンス素子の一層を形成した
ことを特徴とする有機エレクトロルミネセンス素子の製
造装置。2. A vacuum chamber having a holding and conveying means therein, and a plurality of working vacuum chambers for forming a layered portion constituting an organic electroluminescence device are provided around the vacuum chamber, and the working vacuum is provided. Vacuum once in the chamber and the process ends
It is necessary to maintain the vacuum state up to
An apparatus for manufacturing an organic electroluminescent element, characterized in that a single layer of the organic electroluminescent element is formed without the above.
真空室内に自由に移動できる可動アームを設けたことを
特徴とする請求項２記載の有機エレクトロルミネセンス
素子の製造装置。3. The apparatus for manufacturing an organic electroluminescence device according to claim 2, wherein a movable arm whose tip portion is freely movable in each working vacuum chamber is provided in the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000096768A JP3520024B2 (en) | 1994-10-07 | 2000-03-31 | Method and apparatus for manufacturing organic electroluminescent element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6244244A JPH08111285A (en) | 1994-10-07 | 1994-10-07 | Method and apparatus for manufacturing organic electroluminescent element |
| JP2000096768A JP3520024B2 (en) | 1994-10-07 | 2000-03-31 | Method and apparatus for manufacturing organic electroluminescent element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6244244A Division JPH08111285A (en) | 1994-10-07 | 1994-10-07 | Method and apparatus for manufacturing organic electroluminescent element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000306666A JP2000306666A (en) | 2000-11-02 |
| JP3520024B2 true JP3520024B2 (en) | 2004-04-19 |
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|---|---|---|---|
| JP2000096768A Expired - Lifetime JP3520024B2 (en) | 1994-10-07 | 2000-03-31 | Method and apparatus for manufacturing organic electroluminescent element |
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| US20100279021A1 (en) | 2009-05-04 | 2010-11-04 | Samsung Mobile Display Co., Ltd. | Apparatus for depositing organic material and depositing method thereof |
| JP5694679B2 (en) * | 2009-05-04 | 2015-04-01 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | Organic matter vapor deposition apparatus and vapor deposition method |
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