JP3511325B2 - Gas barrier film - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a gas barrier property.
Liquid crystal display device
(Liquid crystal display, abbreviated as LCD below)
) For the substrate to hold the liquid crystal
Transparent gas barrier film or sheet
About. [0002] Conventionally, a base material of a transparent conductor for a liquid crystal display has been used.
Glass has been used as a material, but recently, 1)
Lightweight, 2) Easy to increase the area, 3)
Properties such as not cracking and 4) excellent workability
Use transparent polymer film or sheet for substrate
It has been proposed. However, polymer films
If water is used, water vapor and oxygen that pass through the film
It has been found that the performance of the crystal element is deteriorated. like this
In order to solve the problem, a gas
The necessity of imparting the rear characteristic became clear. [0003] Research on transparent gas barrier films
It has been done since the end, polypropylene and polyester
Vinylidene chloride or vinyl alcohol
Coating with resin with excellent gas barrier properties such as coalescence
What was done (Special Publication No. 50-28120, Special Publication No. 59-
No. 47996), silicon oxide on polyester film
Vacuum deposition or sputtering of thin films of magnesium or magnesium oxide
Items created by law (Japanese Patent Publication No. 51-4810, Japanese Patent Publication No. 5
No. 3-129530, JP-A-63-257630)
Proposed. In addition, if necessary, gas barrier
Layer with a protective layer and further improved gas barrier properties
Laminate other polymer film with adhesive to improve
Mining is also being done. [0004] However, such problems
Conventional transparent gas barrier films are described below.
We found that there was a problem. Sandals
For resin coatings, 1) the temperature dependence of the permeability of gas such as water vapor and oxygen is remarkable.
In particular, gas barrier properties are impaired at high temperatures. 2) Since the interaction between the resin material and gas molecules is large,
The presence of one gas affects the permeability of another gas. example
For example, polyvinylidene chloride and polyvinyl alcohol
The presence of qi has a significant effect on oxygen transmission. 3) Insufficient heat resistance compared to inorganic substances. On the other hand, inorganic substances such as silicon oxide are formed.
1) Gas barrier which is sufficiently excellent in vacuum evaporation or sputtering.
-I can not get the nature. 2) What is produced by plasma CVD or the like is an excellent gas
Although barrier properties can be obtained, a slight increase in thickness
Cracks occur due to partial stress, so the thickness is 2
00 nm or less is the limit.
A function to improve the surface roughness cannot be expected. 3) applying a solution containing polysilazane and then mineralizing
For obtaining a silicon oxide layer by heating, the heat resistance temperature of the polymer film
Due to the limitation of the degree, it cannot be completely mineralized and water vapor
The rate will be high. Accordingly, intensive research has been conducted to solve the above problems.
Of the transparent polymer film
Surface with at least an organic silicon compound and oxygen as raw materials
Silicon oxide layer formed by plasma enhanced chemical vapor deposition
Obtained by applying a liquid containing polysilazane
Surprising by laminating with silicon oxide layer
In addition, what is expected when the above two types of silicon oxide layers are simply stacked
A film with better gas barrier properties than obtained
The present invention has been found. [0007] That is, the present invention provides:
At least one major surface of the transparent polymer film
Chemistry using organic silicon compound and oxygen as raw materials
Formed by evaporation method Thickness is 10-200nm Silicon acid
After applying a compound layer and a liquid containing at least polysilazane
Obtained by heating The film thickness is 0.1 to 2 μm silicon
A gas barrier film formed by laminating an oxide layer
You. Hereinafter, the present invention will be described in detail. First, add
1 to 3 illustrate the present invention.
1 is an example of a cross-sectional configuration of a gas barrier film of the present invention.
Here, 10 is a transparent polymer film, and 20 is at least
Plasma chemical vapor deposition using organic silicon compounds and oxygen as raw materials
The silicon oxide layer formed by the method
Silicon oxide layer obtained by applying and treating a liquid containing zane
It is. In the present invention, a polymer film as a substrate is used.
Is transparent, has a high glass transition temperature,
Low hygroscopicity, and for use in LCD substrates
Those having a small birefringence (retardation) are desirable.
Generally, a retardation of 20 nm or less is preferable.
More preferably 10 nm or less, even more preferably
Or 5 nm or less. List specific polymer names
If so, polyether sulfone, polycarbonate
, Acrylic, polyarylate, etc.
Reethersulfone and modified acrylic are preferred.
Incidentally, regarding the thickness of the transparent polymer film used in the present invention
It is not necessary to specifically limit, and so-called sheets are also included
It is. That is, the polymer film referred to in the present invention.
Refers to the molding of polymers with a thickness in the range of about 25-700 μm
It is intended for objects. In the present invention, such a transparent polymer filter is used.
At least one major surface of the substrate
Formed by plasma enhanced chemical vapor deposition using compounds and oxygen as raw materials
Containing silicon oxide layer and at least polysilazane
Laminate with silicon oxide layer obtained by applying heat treatment after applying body
I do. The order of lamination is not particularly specified.
First, plasma chemistry using organic silicon compounds and oxygen as raw materials
A silicon oxide layer formed by a vapor deposition method is formed, and a polysilicon layer is formed thereon.
Silicon obtained by applying a liquid containing silazane and then performing heat treatment
An oxide layer may be laminated, or conversely, polysilazane may be contained.
To form a silicon oxide layer obtained by applying a liquid
And an organic silicon compound and oxygen.
Even when laminating silicon oxide layers formed by plasma enhanced chemical vapor deposition
Good. Silicon oxide produced by plasma enhanced chemical vapor deposition
As described above, at least the organic silicon compound and oxygen
Organosiliconization created using gas and specifically used
Compounds include acetoxytrimethylsilane, allylamine
Xytrimethylsilane, allyltrimethylsilane, bis
Trimethylsilyl adipate, butoxytrimethylsila
Butyltrimethoxysilane, cyclohexyloxy
Trimethylsilane, decamethylcyclopentasiloxa
, Decamethyltetrasiloxane, diacetoxydimethy
Silane, diacetoxymethylvinylsilane, ethoxy
Sidimethylsilane, diethoxydiphenylsilane, die
Toxi-3-glycidoxypropylmethylsilane, die
Toximethyloctadecylsilane, diethoxymethylsi
Orchid, diethoxymethylphenylsilane, diethoxyme
Tylvinylsilane, dimethoxydimethylsilane, dimetho
Xidiphenylsilane, dimethoxymethylphenylsila
Dimethyl ethoxy phenyl silane, dimethyl ethoxy
Sisilane, dimethyl isopentyloxyvinylsilane,
1,3-dimethyl-1,1,3,3-tetraphenyldi
Siloxane, diphenylethoxymethylsilane, diphe
Nilsilanediol, 1,3-divinyl-1,1,3,
3-tetramethyldisilane, 2- (3,4-epoxy)
Cycyclophenylethyl) trimethoxysilane, ethoxy
Sidimethylvinylsilane, ethoxytrimethylsilane,
Ethyltriacetoxysilane, ethyltriethoxysila
, Ethyltrimethoxysilane, ethyltrimethylsila
3-glycidoxypropyltrimethoxysilane,
1,1,1,3,5,5,5-heptamethyltrisiloxy
Sun, hexamethylcyclotrisiloxane, hexamethyl
Rudisiloxane, hexyltrimethoxysilane,
Rucaptopropyltrimethoxysilane, 3-methacrylo
Xypropyltrimethoxysilane, methoxytrimethyl
Silane, methyltriacetoxysilane, methyltriet
Xysilane, methyltrimethoxysilane, methylisop
Lopenoxysilane, methylpropoxysilane, octade
Siltriethoxyethoxysilane, octamethylcyclo
Tetrasiloxane, 1,1,1,3,5,7,7,7-
Octamethyltetrasiloxane, octamethyltrishiro
Xane, octyltriethoxysilane, 1,3,5
7,9-pentamethylcyclopentasiloxane, penta
Methyldisiloxane, 1,1,3,5,5-pentafe
Nyl-1,3,5-trimethyltrisiloxane, phenyl
Rutriethoxysilane, phenyltrimethoxysilane,
Phenyltrimethylsilane, propoxytrimethylsila
, Propyltriethoxysilane, tetraacetoxy
Orchid, tetrabutoxysilane, tetrateethoxysila
, Tetraisopropoxysilane, tetramethoxysila
1,3,5,7-tetramethoxycyclotetrasilo
Xane, 1,1,3,3-tetramethyldioxane,
Tramethylsilane, 1,3,3,5-tetramethyl-
1,1,5,5-tetraphenyltrisiloxane, 1,
3,5,7-tetramethyl-1,3,5,7-tetrabi
Nylcyclotetrasiloxane, tetrapropoxysila
, Triacetoxyvinylsilane, triethoxyvinyl
Silane, triethylsilane, trihexylsilane, tri
Methoxysilane, trimethoxyvinylsilane, trimethyl
Lucilanol, 1,3,5-trimethyl-1,3,5-
Trivinylcyclotrisiloxane, trimethylvinylsiloxane
Orchid, triphenylsilanol, tris (2-methoxy
Ethoxy) vinylsilane or the like can be used. However
However, not limited to these, aminosilane,
Silazane is also used. [0013] The above-mentioned organic compounds are subjected to plasma chemical vapor deposition.
To introduce into the reaction vessel, use a rare gas such as helium or argon.
Gas can be used as carrier gas. Ma
The organic silicon compound is heated to increase the vapor pressure,
Gas can also be introduced directly. Also, instead of oxygen gas
Instead, oxidizing gases such as ozone and water vapor
Chi, laughing gas, etc. may also be used. With the organic silicon gas to be introduced
The ratio of the flow rate of oxygen gas depends on the type of the organic silicon compound.
However, the flow of oxygen gas / organic silicon gas = 0.2-1.2
The range of the quantitative ratio is preferred. Carrier of rare gas such as helium
-When used as a gas, the organic gas in helium
The range of the flow rate and the flow rate of the oxygen gas is in the range of 0.2 to 1.2 described above.
Enclosures are preferred. If the oxygen flow rate is too low,
The light transmittance and gas barrier properties of the film
When the oxygen flow rate is too high, the film adhesion and gas
The barrier properties decrease. The pressure during the reaction is plasma
As long as it is within the range in which discharge occurs, the normal parallel plate type high circumference
When the film is formed by a microwave plasma apparatus, 0.05 to 2.
5 Torr is preferred, and more preferably 0.1 to 1.
5 Torr. If the pressure is too low, the plasma
It is difficult to maintain electricity, and if the pressure is too high,
Adhesion tends to decrease. However, at lower pressure
Electron cyclotron resonance discharge that can be discharged,
When using helicon wave discharge or magnetron discharge
The pressure range is not limited to the above range.
Measurement and control of flow rate is performed by mass flow controller, floating
It is possible to use a child flow meter, bubble meter, etc.
it can. For measuring pressure, Pirani gauge, diaphragm gauge,
Spinning rotor gauge, heat conduction gauge, ionization gauge
And the like can be used, but a diaphragm gauge is preferably used. Silicon oxide prepared by plasma enhanced chemical vapor deposition
Although the thickness of the layer is not particularly limited,
The gas barrier property is maintained within the range that does not impair
Any thickness may be used as long as the adhesion with the molecular base material can be ensured. Ingredient
Physically, 10 nm or more and 200 nm or less are good.
Is more preferably 20 nm or more and 100 nm or less. 10n
If the thickness is less than m, a uniform and continuous film is formed.
It is desirable that the thickness exceeds 200 nm
Then, the adhesion to the polymer substrate is reduced. For measuring film thickness
Is a stylus roughness meter, a repetitive reflection interferometer, a micro balun
And quartz crystal method, etc.
Thickness can be measured, so the film thickness can be monitored in real time
However, it is suitable for obtaining a desired film thickness. Also,
The conditions for film formation are determined in advance, and the film is formed on the test substrate.
After examining the relationship between film formation time and film thickness,
A method for further controlling the film thickness can also be adopted. On the other hand, after applying a liquid containing polysilazane,
The silicon oxide layer obtained by the heat treatment is preferably
Substrate coated with a solution of silazane dissolved in air
In other words, it can be obtained by treating in an oxidizing atmosphere.
Wear. The polysilazane in the present invention means (Si
N _a H _b ) _n (A = 1 to 3, b = 0 to 1)
Is a perhydropolysilazane having (-Si
Only hydrogen is bonded to -N-) as a side chain. The poly
Silazane is composed of benzene, toluene, xylene, ether
20 in solvents such as toluene, THF, methylene chloride, and carbon tetrachloride.
% By weight or more.
After dissolving the polysilazane in the substrate, apply it to the substrate and heat it
Thus, a silicon oxide can be obtained. At this time,
Generally, at least 450 ° C to obtain inorganic silicon oxide
Temperature is required, but catalysts such as amines and transition metals
By adding to the low-temperature treatment, for example, 100 to 12
Obtain material very close to inorganic silicon oxide at low temperature of 0 ° C
You can do it. The molecular weight of polysilazane
(Mn) can be used in the range of 500 to 3000.
Can be used, but for application, those with a molecular weight of 600-900
It is preferably used. [0016] Silicon formed from a solution containing polysilazane
The thickness of the oxide is preferably from 0.1 to 2 μm, more preferably
More preferably, it is 0.2 to 1 μm. The film thickness is 0.1 μm
If it is too thin, a uniform silicon oxide layer may be obtained.
Film that is not possible and is much thicker than 2 μm
It is not preferable because the film cracks due to stress. Including polysilazane thus formed
The silicon oxide layer formed from the solution, surprisingly,
Polymer film or silicon formed by plasma enhanced chemical vapor deposition
Very firmly adhered to the oxide layer.
Perform a grid test as shown in SK-5400
No peeling was observed at all. Also, steel wool
Surface and the Taber abrasion test
It has become difficult to provide even a function as a protective layer on the surface
It is noteworthy that The gas barrier film of the present invention
The variation of lamination in
Aluminum (A), an organic silicon compound and oxygen as raw materials.
The silicon oxide layer formed by plasma enhanced chemical vapor deposition was
Silicon obtained by applying a liquid containing lysilazane
When the oxide layer is indicated as (C), the actual structure
Is any of BCA, CBA, CBABC, BCACB, etc.
Although it does not matter, in particular, the policy is placed on the transparent polymer film.
Silicon acid obtained by applying heat treatment after applying a liquid containing Razan
Type having a layer structure in which a compound layer is laminated is particularly
preferable. The silicon oxide referred to in the present invention is
Does not necessarily have a stoichiometric composition;
A ratio of Si in a range of 1.6 to 2.1,
Furthermore, carbon, hydrogen and nitrogen derived from the production method are several to ten.
It may contain several atomic%, but the refractive index is 1.
It is preferably 5 or less. It is also formed thus
Silicon oxide must be transparent to a practical thickness.
Of course. Transparent here means the silicon oxide fruit
Light with wavelength of 500-700nm
, The light transmittance is substantially 80% or more
Say Further, iron and nickel are contained in the silicon oxide.
Kel, chrome, titanium, magnesium, aluminum, inge
, Zinc, tin, antimony, tungsten, molybdenum
A trace amount of den, copper and the like may be contained. Also the flexibility of the membrane
Carbon or fluorine for the purpose of improving
No. For measuring the film thickness, a stylus roughness meter,
Interferometer, microbalance, crystal oscillator method, etc.
However, in the quartz oscillator method, film thickness can be measured during film formation.
It is suitable for obtaining a desired film thickness. In addition, the film
Determining the conditions and forming a film on the test substrate,
After examining the relationship with the film thickness, control the film thickness by the film formation time
There is also a way to do it. Also, the thickness of the formed silicon oxide layer
Means cross-sectional observation with a fluorescent X-ray or transmission electron microscope or scanning electron
It can be measured from an electron microscope backscattered electron image. Silicon acid
The composition of the oxide layer is determined by X-ray photoelectron spectroscopy or X-ray microanalysis.
Method, Auger electron spectroscopy, Rutherford backscattering, etc.
Can be used to analyze. For example, after Rutherford
When using the backscattering method, place the sample film in a vacuum container.
Installed from the surface of the specimen, accelerated to 1-4 MeV
The energy of ions that irradiate the particles and are backscattered
Of the composition in the depth direction of the film and its composition
The uniformity can be investigated. To prevent surface layer charging
For this purpose, gold or the like may be appropriately deposited on the surface. Also Auger
When performing analysis by electron spectroscopy, place it in an ultra-high vacuum vessel.
Place the specimen and accelerate it to 1-10 keV on the specimen surface
Auger electrons emitted at that time
By detecting, the composition can be examined. In this case, the specimen may have a high electric resistance.
The primary electron beam current
To less than 10pA and energy to less than 2keV
Is preferred. Light using X-rays instead of electron beams
Electron spectroscopy is more sensitive to charging than Auger electron spectroscopy.
The difficulty is advantageous. The silicon oxide layer is formed on a polymer substrate.
When forming, a corona discharge treatment is performed as a pretreatment of the base material.
Processing, plasma processing, glow discharge processing, reverse sputtering processing,
Surface roughening treatment, chemical treatment, urethane or polyester easy
Performing so-called easy adhesion treatment such as formation of an adhesion layer,
A known undercoat can be applied. Also, the protective layer
Is a transparent plastic, polyester
Fat, acrylic resin, vinyl resin, polycarbonate, etc.
No. As described above, silicon oxidation is performed by two methods.
That the gas barrier property is improved by forming the material layer
The reason is not clear, but stacking can cause defects in each other.
It seems that it will be compensated. Below, the examples
Embodiments of the present invention will be described with reference to comparative examples. Examples In Examples and Comparative Examples, oxygen permeability
Is measured at 23 ° C using Mocon OX-TRAN.
The water vapor transmission rate was measured by infrared spectroscopy at 37 ° C.
It measured using. (Examples 1 to 3) 150 μm-thick polyether sulf
(Hereinafter abbreviated as PES) film (Mitsui Toatsu
Talpa 1000: retardation 5nm)
Xylene with 20% by weight of polysilazane dissolved on the main surface
And heat-treated at 160 ° C for 1 hour.
A silicon oxide layer was obtained with a thickness of 0.1-2 μm. Note that
Use lysilazane with a molecular weight of 600 from Tonen Corp.
Used. Next, an organic silicon gas is deposited on the silicon oxide layer.
Tetramethyldisiloxane vaporized at 40 ° C
(Hereinafter abbreviated as TMDSO), and TMDSO / oxygen =
Introduced into the vacuum vessel at a flow rate of 0.5, 0.1 Torr
13.56MHz high frequency while maintaining vacuum degree
Plasma discharge is caused by introducing into parallel plate electrodes,
50nm thick silicon oxide by plasma enhanced chemical vapor deposition
Layers were created. FIG. 2 shows the layer structure of the film. (Examples 4 and 5) PES having a thickness of 150 μm
Film (Mitsui Toatsu Talpa 1000: Letter Day
20 nm polysilazane on one major surface
Is applied and heated at 160 ° C. for 1 hour.
The silicon oxide layer with a thickness of 0.3 μm
Obtained. The polysilazane has a molecular weight of 6 from Tonen Co., Ltd.
00 was used. Next, an organic silicon gas is deposited on the silicon oxide layer.
Tetramethyldisiloxane vaporized at 40 ° C
(Hereinafter abbreviated as TMDSO), and TMDSO / oxygen =
Introduced into the vacuum vessel at a flow rate of 0.5, 0.1 Torr
13.56MHz high frequency while maintaining vacuum degree
Plasma discharge is caused by introducing into parallel plate electrodes,
10-200 nm-thick silicon by plasma enhanced chemical vapor deposition
An oxide layer was formed. (Example 6) A 150 μm thick PES film
LUM (Mitsui Toatsu Co., Ltd. Talpa 1000: Letter Dash
5 nm) at 40 ° C. as organic silicon gas.
Tetramethyldisiloxane (hereinafter referred to as TMDSO)
Abbreviated) and a true flow rate ratio of TMDSO / oxygen = 0.5.
Introduce into an empty container and maintain a vacuum of 0.1 Torr.
Introduced 13.56MHz high frequency to parallel plate electrode
To generate a plasma discharge,
A silicon oxide layer having a thickness of 50 nm was formed by the method. Next, on the silicon oxide layer, 20% by weight
Xylene in which polysilazane of
The silicon oxide layer is heated at 0.
Obtained with a thickness of 3 μm. The polysilazane has Tonen
The one having a molecular weight of 600 was used. Book film
3 is shown in FIG. (Embodiment 7) The silicon oxide layer of the embodiment 2
It was formed on both sides of the ES film. Layer structure of this film
As shown in FIG. Comparative Example 1 A 150 μm thick PES film
LUM (Mitsui Toatsu Co., Ltd. Talpa 1000: Letter Dash
20% by weight of polysilazane is dissolved on one main surface
Apply the dissolved xylene and heat it at 160 ° C for 1 hour
To obtain a silicon oxide layer with a thickness of 0.3 μm.
Was. The polysilazane has a molecular weight of 60
0 was used. (Comparative Example 2) A 150 μm thick PES film
LUM (Mitsui Toatsu Co., Ltd. Talpa 1000: Letter Dash
5 nm) at 40 ° C. as organic silicon gas.
Tetramethyldisiloxane (hereinafter referred to as TMDSO)
Abbreviated) and a true flow rate ratio of TMDSO / oxygen = 0.5.
Introduce into an empty container and maintain a vacuum of 0.1 Torr.
Introduced 13.56MHz high frequency to parallel plate electrode
To generate a plasma discharge,
A silicon oxide layer having a thickness of 50 nm was formed by the method. (Comparative Examples 3 and 4) PES having a thickness of 150 μm
Film (Mitsui Toatsu Talpa 1000: Letter Day
20 nm polysilazane on one major surface
Is applied and heated at 160 ° C. for 1 hour.
The silicon oxide layer with a thickness of 0.3 μm
Obtained. The polysilazane has a molecular weight of 6 from Tonen Co., Ltd.
00 was used. Next, an organic silicon gas is formed on the silicon oxide layer.
Tetramethyldisiloxane vaporized at 40 ° C
(Hereinafter abbreviated as TMDSO), and TMDSO / oxygen =
Introduced into the vacuum vessel at a flow rate of 0.5, 0.1 Torr
13.56MHz high frequency while maintaining vacuum degree
Plasma discharge is caused by introducing into parallel plate electrodes,
5nm and 300n film thickness by plasma enhanced chemical vapor deposition
m silicon oxide layers were prepared. (Comparative Examples 5 and 6) PES having a thickness of 150 μm
Film (Mitsui Toatsu Talpa 1000: Letter Day
20 nm polysilazane on one major surface
Is applied and heated at 160 ° C. for 1 hour.
By processing, the silicon oxide layer has a thickness of 0.05 μm and
Obtained with a thickness of 3 μm. The polysilazane has Tonen
The one having a molecular weight of 600 was used. Next, an organic silicon gas is deposited on the silicon oxide layer.
Tetramethyldisiloxane vaporized at 40 ° C
(Hereinafter abbreviated as TMDSO), and TMDSO / oxygen =
Introduced into the vacuum vessel at a flow rate of 0.5, 0.1 Torr
13.56MHz high frequency while maintaining vacuum degree
Plasma discharge is caused by introducing into parallel plate electrodes,
50nm thick silicon oxide by plasma enhanced chemical vapor deposition
Layers were created. The films prepared in Examples and Comparative Examples
Table 1 shows the results of measuring the oxygen gas permeability. Above
Table 1 shows the results of Examples and Comparative Examples. [Table 1] From the above Examples and Comparative Examples, the present invention
Gas barrier films show excellent performance.
Call Note that, in the above comparative example, the silicon
Two types compared to the case where an oxide layer was prepared (Comparative Examples 1 and 2)
It is better to stack a silicon oxide layer of
The cause of inferior properties (Comparative Examples 4 to 7) is not clear
However, any defects that occur in one layer
Guessing that the result is having a bad effect
You. As will be apparent from the above examples and comparative examples.
In addition, both oxygen permeability and water vapor permeability according to the present invention,
It is extremely low and is suitable for use as a substrate for liquid crystal displays.
Thus, a gas barrier film which can be obtained can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an example of a sectional configuration of a barrier film according to the present invention. FIG. 2 is an example of a sectional configuration of a gas barrier film according to the present invention. FIG. Example of cross-sectional configuration diagram of gas barrier film [Description of References] 10 Transparent polymer film 20 Silicon oxide layer 30 formed by plasma chemical vapor deposition using at least an organic silicon compound and oxygen as raw materials At least a liquid containing polysilazane Silicon oxide layer obtained by post-coating treatment

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. ⁷ , DB name) B32B 1/00-35/00 C08J ⁷ /04-7/06 C23C 16/00-16/56

Claims (1)

(57) [Claim 1] At least one main surface of a transparent polymer film has a thickness of 10 to 200 nm formed by a plasma chemical vapor deposition method using at least an organic silicon compound and oxygen as raw materials.
And a silicon oxide layer is, the film thickness obtained by post-coating heat treating a liquid containing at least polysilazane 0.1~2μ
A gas barrier film obtained by laminating a silicon oxide layer having a thickness of m .