JP3501930B2 - Plasma processing method - Google Patents
Plasma processing methodInfo
- Publication number
- JP3501930B2 JP3501930B2 JP32992397A JP32992397A JP3501930B2 JP 3501930 B2 JP3501930 B2 JP 3501930B2 JP 32992397 A JP32992397 A JP 32992397A JP 32992397 A JP32992397 A JP 32992397A JP 3501930 B2 JP3501930 B2 JP 3501930B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- gas
- plasma
- plate
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマ処理技術に
関し、特に、処理ガスをシャワー状に供給するプラズマ
処理等に適用して有効な技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing technique, and more particularly to a technique effective when applied to a plasma treatment or the like for supplying a treatment gas in a shower form.
【０００２】[0002]
【従来の技術】たとえば、プラズマエッチング装置のよ
うなプラズマ処理装置では、真空容器内にガスを供給し
かつ真空容器を真空排気し、ある一定の圧力に保ちつ
つ、対向電極板間に高周波電力を印加し、プラズマを生
成している。この対向電極板には一般的に、一方に半導
体ウェハを載置し、他方側からガスを供給し、半導体ウ
ェハのプラズマ処理を行っている。2. Description of the Related Art For example, in a plasma processing apparatus such as a plasma etching apparatus, a gas is supplied into a vacuum container and the vacuum container is evacuated to maintain a certain constant pressure, and high frequency power is applied between opposing electrode plates. It is applied to generate plasma. In general, a semiconductor wafer is placed on one side of this counter electrode plate, and gas is supplied from the other side to perform plasma treatment of the semiconductor wafer.
【０００３】この場合、たとえば、株式会社工業調査
会、１９９４年１１月２５日発行、「電子材料」１９９
４年別刷、Ｐ４４〜Ｐ５１、等の文献にも記載されてい
るように、ガスを広範囲にわたり均一に供給するため、
ガスを供給する側の対向電極板にシャワー状に微小穴を
数百個設け、その微小穴からガス供給する方法が採られ
てきた。In this case, for example, "Electronic Materials" 199, published by Industrial Research Institute Co., Ltd., November 25, 1994.
As described in literatures such as 4th year reprint, P44 to P51, etc., in order to uniformly supply gas over a wide range,
A method has been adopted in which hundreds of minute holes are provided in a shower shape on the counter electrode plate on the gas supplying side, and the gas is supplied from the minute holes.
【０００４】[0004]
【発明が解決しようとする課題】このような従来技術で
は、ガスはまず電極板の上流側の１ヶ所から導入され、
最終的に電極板に設けられた数百個の微小穴から真空容
器内にシャワー状に供給される。このシャワー状のガス
穴から真空容器内に均一にガスを供給するために、たと
えば図５に例示されるように、電極板内の上流側の直前
位置にガス溜りとなる空間を設け、この空間とガス穴の
コンダクタンスの差（空間のコンダクタンス≫ガス穴の
コンダクタンス）によって、ある程度均一な供給が期待
できる。しかし、ガス溜り空間と個々のガス穴の関係を
全て同一にし、コンダクタンスを一定にすることはこの
方法では難しいため、個々のガス穴から均一にガスを供
給することは難しい、という技術的課題がある。In such a conventional technique, the gas is first introduced from one place on the upstream side of the electrode plate,
Finally, it is supplied like a shower into the vacuum vessel through several hundreds of micro holes provided in the electrode plate. In order to uniformly supply the gas into the vacuum container from the shower-like gas holes, a space serving as a gas reservoir is provided at a position immediately upstream of the electrode plate, as shown in FIG. 5, for example. And the gas hole conductance difference (space conductance >> gas hole conductance), a uniform supply can be expected to some extent. However, since it is difficult to make the conductance constant by making the relationship between the gas reservoir space and individual gas holes all the same, it is difficult to supply gas uniformly from individual gas holes. is there.
【０００５】また、対向電極板はプラズマからの高温に
さらされるため、冷却を目的とした温度調節を行うのが
一般的であるが、シャワー状ガス穴の上流にガス溜り空
間が形成されているため、電極内部の大部分が空間とな
り、熱伝達面積が少なく電極板自体を十分に温度調節す
ることは難しい。このため電極板の温度が上がってしま
い、電極板の熱膨張等の他の技術的課題も懸念される。Further, since the counter electrode plate is exposed to a high temperature from plasma, it is common to adjust the temperature for the purpose of cooling, but a gas reservoir space is formed upstream of the shower-like gas hole. Therefore, most of the inside of the electrode becomes a space, the heat transfer area is small, and it is difficult to sufficiently control the temperature of the electrode plate itself. For this reason, the temperature of the electrode plate rises, and other technical problems such as thermal expansion of the electrode plate may be concerned.
【０００６】本発明の目的は、シャワー状に供給される
処理ガスの供給量の分布を任意に制御することが可能な
プラズマ処理技術を提供することにある。It is an object of the present invention to provide a plasma processing technique capable of arbitrarily controlling the distribution of the supply amount of the processing gas supplied in the shower shape.
【０００７】本発明の他の目的は、シャワー状に処理ガ
スを供給して行われるプラズマ処理の均一性を向上させ
ることが可能なプラズマ処理技術を提供することにあ
る。Another object of the present invention is to provide a plasma processing technique capable of improving the uniformity of plasma processing performed by supplying a processing gas in a shower shape.
【０００８】本発明の他の目的は、シャワー状に処理ガ
スを供給する電極やガス供給手段の温度調節を的確に行
うことが可能なプラズマ処理技術を提供することにあ
る。Another object of the present invention is to provide a plasma processing technique capable of accurately controlling the temperature of an electrode or a gas supply means for supplying a processing gas in a shower shape.
【０００９】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
【００１０】[0010]
【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
以下のとおりである。Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.
【００１１】本発明のプラズマ処理方法は、処理室の内
部に収容された被処理物に対して処理ガスを供給し、前
記処理ガスをプラズマ化して前記被処理物に所望のプラ
ズマ処理を施すプラズマ処理方法であって、前記被処理
物に対向する上部電極が、積層した複数の管路板を接合
して構成され、前記各管路板には、前記処理ガスを分岐
して均一なコンダクタンスを持って流すための管路とな
る溝と、各管路板を貫通する前記処理ガスの流路となる
透孔とが穿設され、１つのガス供給孔より最上層の前記
管路板へ前記処理ガスを供給し、前記処理ガスを前記複
数の管路板によって階層的に分岐して、最下層の前記管
路板の透孔より前記処理室内へ前記処理ガスを一様に供
給して、前記プラズマ処理を行うものである。[0011] The plasma processing method of the present invention is to provide a process gas to the processing object contained in the processing chamber, before
Wherein the serial processing gas into a plasma by a plasma processing method for performing a desired plasma process on a target object, the object to be processed
The upper electrode facing the object joins multiple stacked conduit boards
The processing gas is branched to each of the conduit plates.
To provide a uniform conductance and flow.
And a channel for the processing gas that penetrates each channel plate
A through hole, and the uppermost layer is formed from one gas supply hole.
The processing gas is supplied to the conduit plate, and the processing gas is mixed with the processing gas.
The pipes of the lowest layer are hierarchically branched by a number of pipe plates.
The processing gas is uniformly supplied into the processing chamber through the through holes of the road plate.
Is supplied to perform the plasma treatment.
【００１２】より具体的には、一例として、電極板にお
いて上流側の１ヶ所から処理ガスが導入され、被処理物
に対する対向面に設けられた多数の微小穴からシャワー
状に真空容器内に供給する構成において、以下の手段を
用いる。More specifically, as an example, the processing gas is introduced from one upstream side of the electrode plate, and is supplied into the vacuum container in a shower shape from a large number of minute holes provided on the surface facing the object to be processed. In the configuration, the following means are used.
【００１３】すなわち、従来のガス溜り空間の代わり
に、断面積や長さ等の仕様を共通とし、流路内のコンダ
クタンスを一定とした分岐管路を形成し、この分岐管路
の放出端が、多数の微小穴として被処理物の対向面に開
口する構成とする。そして、この分岐管路に処理ガスを
流し、多数の放出端（微小穴）を通じて処理ガスをシャ
ワー状に均一に分散させることで均一に処理ガスを供給
する構成とする。That is, instead of the conventional gas reservoir space, a branch pipe having a common conductance in the flow passage is formed with a common specification such as cross-sectional area and length, and the discharge end of this branch pipe is formed. A large number of minute holes are formed on the opposite surface of the object to be processed. Then, the processing gas is made to flow uniformly through this branch pipe, and the processing gas is uniformly dispersed in a shower shape through a large number of discharge ends (micro holes).
【００１４】これにより、被処理物に対するプラズマ処
理を均一に行うことができる。さらに、電極では、分岐
管路以外は中実な構造となり、必要以上に大きな空間が
存在しないので熱の伝導性が良好となり、たとえば、電
極内部に設けられた流路に熱媒体を流通させること等に
よる温度調節を的確に行うことが可能になる。As a result, it is possible to uniformly perform the plasma processing on the object to be processed. Furthermore, the electrode has a solid structure other than the branch pipe, and since there is no unnecessarily large space, it has good heat conductivity. For example, it is necessary to circulate the heat medium in the flow path provided inside the electrode. It becomes possible to precisely control the temperature by such as.
【００１５】 また、本発明の他のプラズマ処理方法
は、処理室の内部に収容された被処理物に対して処理ガ
スを供給し、前記処理ガスをプラズマ化して前記被処理
物に所望のプラズマ処理を施すプラズマ処理方法におい
て、前記被処理物に対向する上部電極が、積層した複数
の管路板により構成され、前記各管路板には前記処理ガ
スを分岐して、所望の分布のコンダクタンスを持って流
すために、管路となる溝と、各管路板を貫通する前記処
理ガスの流路となる透孔の寸法を独立に変えて穿設し、
１つのガス供給孔より最上層の前記管路板へ前記処理ガ
スを供給し、前記処理ガスを前記複数の管路板によって
階層的に分岐して、最下層の前記管路板の透孔より前記
処理室内へ前記処理ガスを供給して、前記プラズマ処理
を行うものである。 Further , another plasma processing method of the present invention
Is a processing gas for the objects to be processed stored inside the processing chamber.
Gas to supply the process gas into plasma and process the processed gas.
In the plasma processing method that applies the desired plasma processing to the object
A plurality of stacked upper electrodes facing the object to be processed.
Of the conduit plates, and each of the conduit plates has the processing gas.
The current with a desired distribution of conductance.
In order to do this, the groove that will become the conduit and the treatment that penetrates each conduit plate
The size of the through hole, which serves as the flow path for the physical gas, is changed independently and drilled.
From one gas supply hole to the above-mentioned conduit plate of the uppermost layer
Gas is supplied to the processing gas through the plurality of conduit plates.
Hierarchically branch from the through hole of the conduit plate of the bottom layer
The plasma processing is performed by supplying the processing gas into the processing chamber.
Is to do.
【００１６】[0016]
【発明の実施の形態】以下、本発明の実施の形態を図面
を参照しながら詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the drawings.
【００１７】図１は本発明のプラズマ処理方法およびプ
ラズマ処理装置の一実施の形態であるプラズマエッチン
グ装置の構成の一例を示す概念図であり、図２は、その
電極の構成の一例を示す組立図、図３は、その電極に設
けられた分岐管路の分岐状態の一例を示す概念図、図４
は、本実施の形態の電極と従来技術とを比較対照して示
す説明図である。FIG. 1 is a conceptual diagram showing an example of the structure of a plasma etching apparatus which is an embodiment of the plasma processing method and the plasma processing apparatus of the present invention, and FIG. 2 is an assembly showing an example of the structure of its electrodes. FIG. 3 is a conceptual diagram showing an example of a branched state of a branch pipe provided in the electrode, FIG.
FIG. 4 is an explanatory diagram showing the electrodes of the present embodiment and the prior art in comparison and contrast.
【００１８】真空容器２で形成した処理室１内にガスボ
ンベ９から供給される処理ガス９ａをマスフローコント
ローラ８により流量を調整し、それをガス供給系７を通
して導入し、同時に真空ポンプ１２により真空排気し、
その排気系１０に圧力調整バルブ１１を設け圧力調整を
行う。また、この状態で上下方向に対向した下部電極３
と上部電極４との間に高周波電源１３により高周波電力
を印加しプラズマ１４を生成させ、下部電極３上に設置
したウェハ６をエッチング処理する。The processing gas 9a supplied from the gas cylinder 9 is adjusted in flow rate by the mass flow controller 8 into the processing chamber 1 formed by the vacuum container 2 and is introduced through the gas supply system 7 and, at the same time, is evacuated by the vacuum pump 12. Then
A pressure adjusting valve 11 is provided in the exhaust system 10 to adjust the pressure. Further, in this state, the lower electrode 3 which is vertically opposed to each other
A high-frequency power source 13 applies high-frequency power between the upper electrode 4 and the upper electrode 4 to generate plasma 14, and the wafer 6 placed on the lower electrode 3 is etched.
【００１９】また、下部電極３の内部には、熱媒体通路
３ａが設けられ、下部電極温度調節器１６から供給され
る所定の温度の熱媒体１６ａを、この熱媒体通路３ａに
流通させることにより温度調節が行われる。また、上部
電極４は上部電極温度調節器１５から供給される熱媒体
１５ａにて後述のように温度調節が行われる。A heat medium passage 3a is provided inside the lower electrode 3, and a heat medium 16a having a predetermined temperature supplied from the lower electrode temperature controller 16 is circulated in the heat medium passage 3a. Temperature control is performed. The temperature of the upper electrode 4 is adjusted by the heat medium 15a supplied from the upper electrode temperature controller 15 as described later.
【００２０】本実施の形態の場合、図２に例示されるよ
うに、上部電極４は、冷却板４１と複数の管路板４２〜
４ｎを気密に積み重ねた多層構造となっている。すなわ
ち、最上層の冷却板４１は、中央部を貫通するガス供給
孔４１ａと、このガス供給孔４１ａを取り囲むように形
成され、熱媒体１５ａが流通する熱媒体流通路４１ｂ
と、上部電極温度調節器１５に接続される接続孔４１ｃ
とが形成されている。In the case of the present embodiment, as illustrated in FIG. 2, the upper electrode 4 includes a cooling plate 41 and a plurality of conduit plates 42 to 42.
It has a multilayer structure in which 4n are airtightly stacked. That is, the cooling plate 41 of the uppermost layer is formed so as to surround the gas supply hole 41a and the gas supply hole 41a penetrating the central portion, and the heat medium flow passage 41b through which the heat medium 15a flows.
And a connection hole 41c connected to the upper electrode temperature controller 15
And are formed.
【００２１】その下の管路板４２〜４ｎの各々は、十字
形に放射状に分岐した分岐溝４ａと、この分岐溝４ａの
先端部に、当該管路板を貫通するように穿設された透孔
４ｂとが形成されている。各管路板の透孔４ｂは、直下
の管路板の分岐溝４ａの分岐中心４ｃの位置に重なりあ
うように形成されている。ただし、管路板４２〜４ｎの
うち、最上の管路板４２の分岐溝４ａの分岐中心４ｃ
は、冷却板４１の中央に設けられた一つのガス供給孔４
１ａに一致している。また、最下部の管路板４ｎの複数
の透孔４ｂは、処理ガス９ａをシャワー状に噴出する放
出端４ｄとして機能する。Each of the conduit plates 42 to 4n below it is provided with a branch groove 4a radially branched in a cross shape, and at the tip of this branch groove 4a so as to penetrate the conduit plate. A through hole 4b is formed. The through hole 4b of each conduit plate is formed so as to overlap the position of the branch center 4c of the branch groove 4a of the conduit plate immediately below. However, of the conduit plates 42 to 4n, the branch center 4c of the branch groove 4a of the uppermost conduit plate 42.
Is a single gas supply hole 4 provided in the center of the cooling plate 41.
It matches 1a. Further, the plurality of through holes 4b of the lowermost conduit plate 4n function as a discharge end 4d for ejecting the processing gas 9a in a shower shape.
【００２２】すなわち、１段目の管路板４２では、冷却
板４１の一つのガス供給孔４１ａを１個の十字状の分岐
溝４ａにて４経路に分岐し、２段目の管路板４３では、
４個の十字状の分岐溝４ａにて１６経路に分岐し、３段
目の管路板４４では、１６個の十字状の分岐溝４ａに
て、さらに６４経路に分岐し、４段目の管路板４５では
６４個の分岐溝４ａにてさらに２５６個に分岐する。こ
のとき、管路板４２〜４ｎの各々では、十字状の分岐溝
４ａの形状（幅・深さ・長さ）を同一にし、かつ上下の
管路板を連絡する透孔４ｂの径を同一にする。That is, in the first-stage conduit plate 42, one gas supply hole 41a of the cooling plate 41 is branched into four paths by one cross-shaped branch groove 4a, and the second-stage conduit plate 42 is divided. At 43,
The four cross-shaped branch grooves 4a branch into 16 paths, and the conduit plate 44 of the third step further branches into 64 paths through the 16 cross-shaped branch grooves 4a, and the fourth step. In the conduit plate 45, the branch groove 4a of 64 branches further into 256 branches. At this time, in each of the conduit plates 42 to 4n, the cross-shaped branch grooves 4a have the same shape (width, depth, length), and the diameters of the through holes 4b that connect the upper and lower conduit plates are the same. To
【００２３】これにより、気密に積み重ねられた複数の
管路板４２〜４ｎの分岐溝４ａおよび透孔４ｂは互いに
連通して、図３に例示されるように、供給元のガス供給
孔４１ａから放出端４ｄまでの管路長および断面積（断
面積の変化の分布）が等しく、コンダクタンスが一様な
分岐管路５を構成する。As a result, the branch grooves 4a and the through holes 4b of the plurality of airtightly stacked conduit plates 42 to 4n communicate with each other, and as shown in FIG. 3, from the gas supply hole 41a of the supply source. The branch length 5 and the cross-sectional area (distribution of change in cross-sectional area) to the discharge end 4d are equal to each other, and a branch conduit 5 having uniform conductance is formed.
【００２４】すなわち、冷却板４１の中央部のガス供給
孔４１ａの１ヶ所から導入した処理ガス９ａを管路板４
２〜４ｎの分岐溝４ａで４分割する操作を、たとえば４
回（本実施の形態の図１および図２の例では、図示を簡
単にするため２回分を例示している）行えば（つまり４
枚の管路板４２〜４ｎ）、最終的には、ガス供給孔４１
ａの１個が２５６の放出端４ｄに等分割されることにな
る。That is, the process gas 9a introduced from one of the gas supply holes 41a in the central portion of the cooling plate 41 is supplied to the conduit plate 4
The operation of dividing into 4 by the branch groove 4a of 2 to 4n is performed by, for example, 4
One time (in the example of FIGS. 1 and 2 of the present embodiment, two times are illustrated for simplicity of illustration) (that is, 4 times).
Sheet conduit plates 42 to 4n), and finally the gas supply hole 41
One a is to be equally divided into 256 discharge ends 4d.
【００２５】なお、分岐溝４ａおよび透孔４ｂの加工精
度としては、たとえば、分岐溝４ａは、先端から先端ま
での長さ寸法が、２０ｍｍ〜２００ｍｍの分布を持つと
き、±0.３〜0.５ｍｍの寸法誤差で加工し、分岐溝４ａ
および透孔４ｂの口径が、たとえば１ｍｍ×１ｍｍ〜1.
５ｍｍ〜1.５ｍｍの分布の場合に、±0.１ｍｍ程度の加
工誤差で、十分なコンダクタンスの均一性が得られるこ
とが確認されている。The processing accuracy of the branch groove 4a and the through hole 4b is, for example, ± 0.3 to 0 when the length dimension of the branch groove 4a from tip to tip has a distribution of 20 mm to 200 mm. Processed with a dimensional error of 0.5 mm, branch groove 4a
And the diameter of the through hole 4b is, for example, 1 mm × 1 mm to 1.
It has been confirmed that in the case of the distribution of 5 mm to 1.5 mm, sufficient conductance uniformity can be obtained with a processing error of about ± 0.1 mm.
【００２６】また、この分岐溝４ａの形状や分岐数を変
化させたり、連絡する透孔４ｂの径を変化させることに
よって、上部電極４から処理室１内に供給する処理ガス
９ａの分布を意図的に変化させることも容易に行うこと
ができる。Further, the distribution of the processing gas 9a supplied from the upper electrode 4 into the processing chamber 1 is intended by changing the shape of the branch groove 4a, the number of branches, and the diameter of the through hole 4b which communicates with each other. It can be easily changed.
【００２７】このように、本実施の形態のプラズマエッ
チング装置によれば、上部電極４において、冷却板４１
の１ヶ所のガス供給孔４１ａから複数の放出端４ｄに至
る複数の分岐経路のコンダクタンスが均一な分岐管路５
を通じて、処理ガス９ａを処理室１へシャワー状に供給
するので、理論上均一なガス供給が可能となる。As described above, according to the plasma etching apparatus of the present embodiment, the cooling plate 41 is provided in the upper electrode 4.
Of the plurality of branch paths from one gas supply hole 41a to the plurality of discharge ends 4d having uniform conductances
Through the above, the processing gas 9a is supplied to the processing chamber 1 in a shower shape, so that theoretically uniform gas supply is possible.
【００２８】この結果、下部電極３上のウェハ６と上部
電極４との間に供給される処理ガス９ａから形成される
プラズマ１４の分布の均一性が向上し、ウェハ６に対す
るプラズマ１４によるエッチングを均一に行うことがで
き、均一なエッチング結果を得ることができ、当該エッ
チングにてウェハ６に形成される図示しない回路パター
ン等の寸法精度が向上し、ウェハ６に形成される図示し
ない半導体装置の歩留りや性能が向上する。As a result, the uniformity of the distribution of the plasma 14 formed from the processing gas 9a supplied between the wafer 6 on the lower electrode 3 and the upper electrode 4 is improved, and etching of the wafer 6 by the plasma 14 is improved. The etching can be performed uniformly, a uniform etching result can be obtained, the dimensional accuracy of a circuit pattern (not shown) formed on the wafer 6 is improved by the etching, and a semiconductor device (not shown) formed on the wafer 6 can be formed. Yield and performance are improved.
【００２９】また、意図的に複数の分岐管路のコンダク
タンス（流路断面積や流路長で調整）を変化させること
で、上部電極４から処理室１への処理ガス９ａの供給状
態や分布を制御することができ、たとえばプロセス条件
等に応じたプラズマ１４のきめこまかな制御を行うこと
ができる。たとえば、上部電極４の外周部の複数の放出
端４ｄのコンダクタンスを、内側の複数の放出端４ｄの
コンダクタンスよりも大きくする、等の設定も可能であ
る。Further, by intentionally changing the conductances of a plurality of branch pipes (adjusted by the flow passage cross-sectional area and the flow passage length), the supply state and distribution of the processing gas 9a from the upper electrode 4 to the processing chamber 1 can be obtained. Can be controlled, and for example, fine control of the plasma 14 according to process conditions and the like can be performed. For example, it is possible to set the conductance of the plurality of emission ends 4d on the outer peripheral portion of the upper electrode 4 to be larger than the conductance of the plurality of emission ends 4d on the inner side.
【００３０】さらに、本実施の形態の場合には、上部電
極４を構成する複数の管路板４２〜４ｎは、図４に例示
されるように、大きなガス溜まり空間が形成される従来
の構造に比較して、互いに接触面積、すなわち熱伝導面
積が大きくなるので、冷却板４１の熱媒体流通路４１ｂ
を流通する熱媒体１５ａからの熱による温度制御をより
的確に行うことができ、たとえば過熱等に起因する上部
電極４の熱変形等の障害を防止することが可能になる。Further, in the case of the present embodiment, the plurality of conduit plates 42 to 4n forming the upper electrode 4 have a conventional structure in which a large gas reservoir space is formed as illustrated in FIG. Compared with the above, the contact area, that is, the heat conduction area is larger than that of the heat transfer passage 41b of the cooling plate 41.
It is possible to more accurately control the temperature by the heat from the heat medium 15a that flows through, and it is possible to prevent an obstacle such as thermal deformation of the upper electrode 4 due to overheating or the like.
【００３１】以上本発明者によってなされた発明を実施
の形態に基づき具体的に説明したが、本発明は前記実施
の形態に限定されるものではなく、その要旨を逸脱しな
い範囲で種々変更可能であることはいうまでもない。Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.
【００３２】たとえば、上述の実施の形態では、ガス供
給手段として上部電極を用いる場合を例示したが、電極
とは別個に分岐管路を備えたガス供給手段を備えること
も本発明に含まれる。また、プラズマ処理としては、プ
ラズマエッチングに限らず、プラズマＣＶＤ等、一般の
プラズマ処理に広く適用することができる。For example, in the above-mentioned embodiment, the case where the upper electrode is used as the gas supply means is illustrated, but the present invention also includes the gas supply means provided with the branch pipe line separately from the electrode. Further, the plasma processing is not limited to plasma etching, but can be widely applied to general plasma processing such as plasma CVD.
【００３３】以上の説明では、主として本発明者によっ
てなされた発明をその背景となった利用分野である半導
体装置の製造プロセスにおけるプラズマエッチング工程
に適用した場合を例に採って説明したが、プラズマを利
用した一般のプロセス技術に広く適用することができ
る。In the above description, the invention mainly made by the present inventor has been described as an example in which the invention is applied to the plasma etching step in the manufacturing process of the semiconductor device which is the field of application of the invention. It can be widely applied to the general process technology used.
【００３４】[0034]
【発明の効果】本願において開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
以下のとおりである。The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.
【００３５】本発明のプラズマ処理方法によれば、シャ
ワー状に供給される処理ガスの供給量の分布を任意に制
御することができる、という効果が得られる。According to the plasma processing method of the present invention, it is possible to obtain an effect that the distribution of the supply amount of the processing gas supplied in the shower shape can be arbitrarily controlled.
【００３６】また、本発明のプラズマ処理方法によれ
ば、シャワー状に処理ガスを供給して行われるプラズマ
処理の均一性を向上させることができる、という効果が
得られる。Further, according to the plasma processing method of the present invention, it is possible to improve the uniformity of the plasma processing performed by supplying the processing gas in a shower shape.
【００３７】また、本発明のプラズマ処理方法によれ
ば、シャワー状に処理ガスを供給する電極やガス供給手
段の温度調節を的確に行うことができる、という効果が
得られる。Further, according to the plasma processing method of the present invention, there is an effect that the temperature of the electrode or the gas supply means for supplying the processing gas in a shower shape can be accurately adjusted.
【００３８】本発明のプラズマ処理装置によれば、シャ
ワー状に供給される処理ガスの供給量の分布を任意に制
御することができる、という効果が得られる。According to the plasma processing apparatus of the present invention, it is possible to obtain an effect that the distribution of the supply amount of the processing gas supplied in the shower shape can be arbitrarily controlled.
【００３９】また、本発明のプラズマ処理装置によれ
ば、シャワー状に処理ガスを供給して行われるプラズマ
処理の均一性を向上させることができる、という効果が
得られる。Further, according to the plasma processing apparatus of the present invention, it is possible to improve the uniformity of the plasma processing performed by supplying the processing gas in a shower shape.
【００４０】また、本発明のプラズマ処理装置によれ
ば、シャワー状に処理ガスを供給する電極やガス供給手
段の温度調節を的確に行うことができる、という効果が
得られる。Further, according to the plasma processing apparatus of the present invention, it is possible to obtain an effect that the temperature of the electrode or the gas supply means for supplying the processing gas in a shower shape can be accurately adjusted.
【図１】本発明のプラズマ処理方法およびプラズマ処理
装置の一実施の形態であるプラズマエッチング装置の構
成の一例を示す概念図である。FIG. 1 is a conceptual diagram showing an example of a configuration of a plasma etching apparatus which is an embodiment of a plasma processing method and a plasma processing apparatus of the present invention.
【図２】本発明のプラズマ処理方法およびプラズマ処理
装置の一実施の形態であるプラズマエッチング装置の電
極の構成の一例を示す組立図である。FIG. 2 is an assembly diagram showing an example of a configuration of electrodes of a plasma etching apparatus which is an embodiment of a plasma processing method and a plasma processing apparatus of the present invention.
【図３】本発明のプラズマ処理方法およびプラズマ処理
装置の一実施の形態であるプラズマエッチング装置の電
極に設けられた分岐管路の分岐状態の一例を示す概念図
である。FIG. 3 is a conceptual diagram showing an example of a branched state of a branched conduit provided in an electrode of a plasma etching apparatus which is an embodiment of a plasma processing method and a plasma processing apparatus of the present invention.
【図４】本発明の一実施の形態である電極と従来技術と
を比較対照して示す説明図である。FIG. 4 is an explanatory view showing an electrode according to an embodiment of the present invention and a related art in comparison with each other.
【図５】考えられる従来のプラズマ処理装置の電極板内
の構造の一例を示す説明図である。FIG. 5 is an explanatory diagram showing an example of a structure in an electrode plate of a possible conventional plasma processing apparatus.
１ 処理室 ２ 真空容器 ３ 下部電極 ３ａ 熱媒体通路 ４ 上部電極 ４１ 冷却板 ４１ａ ガス供給孔 ４１ｂ 熱媒体流通路 ４１ｃ 接続孔 ４２〜４ｎ 管路板 ４ａ 分岐溝 ４ｂ 透孔 ４ｃ 分岐中心 ４ｄ 放出端 ５ 分岐管路 ６ ウェハ ７ ガス供給系 ８ マスフローコントローラ（ガス流量調整器） ９ ガスボンベ ９ａ 処理ガス １０ 排気系 １１ 圧力調整バルブ １２ 真空ポンプ １３ 高周波電源 １４ プラズマ １５ 上部電極温度調節器 １５ａ 熱媒体 １６ 下部電極温度調節器 １６ａ 熱媒体 1 processing room 2 vacuum container 3 Lower electrode 3a Heat medium passage 4 Upper electrode 41 Cooling plate 41a gas supply hole 41b Heat medium flow passage 41c connection hole 42-4n conduit plate 4a Branch groove 4b through hole 4c branch center 4d emission end 5 branch lines 6 wafers 7 gas supply system 8 Mass flow controller (gas flow controller) 9 gas cylinders 9a Processing gas 10 Exhaust system 11 Pressure control valve 12 Vacuum pump 13 High frequency power supply 14 plasma 15 Upper electrode temperature controller 15a heat medium 16 Lower electrode temperature controller 16a heat medium
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平７−335635（ＪＰ，Ａ) 特開 平７−90572（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23F 4/00 H01L 21/3065 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-7-335635 (JP, A) JP-A-7-90572 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) C23F 4/00 H01L 21/3065
Claims (3)
して処理ガスを供給し、前記処理ガスをプラズマ化して
前記被処理物に所望のプラズマ処理を施すプラズマ処理
方法であって、 前記被処理物に対向する上部電極が、積層した複数の管
路板により構成され、 前記各管路板には前記処理ガスを分岐して均一なコンダ
クタンスを持って流すための管路となる溝と、各管路板
を貫通する前記処理ガスの流路となる透孔が穿設され、 １つのガス供給孔より最上層の前記管路板へ前記処理ガ
スを供給し、 前記処理ガスを前記複数の管路板によって階層的に分岐
して、最下層の前記管路板の透孔より前記処理室内へ前
記処理ガスを一様に供給して、前記プラズマ処理を行う
ことを特徴とするプラズマ処理方法。1. A plasma processing method for supplying a processing gas to an object to be processed contained in a processing chamber, converting the processing gas into plasma, and subjecting the object to a desired plasma treatment, The upper electrode facing the object to be processed has a plurality of laminated tubes.
A channel plate , and each of the channel plates has a groove serving as a channel for branching the processing gas to flow with a uniform conductance; and a channel of the processing gas that penetrates each channel plate. A through hole is formed, the processing gas is supplied to the uppermost channel plate from one gas supply hole, and the processing gas is hierarchically branched by the plurality of channel plates to form a lowermost layer. A plasma processing method, wherein the processing gas is uniformly supplied into the processing chamber through a through hole of the conduit plate to perform the plasma processing.
て、 前記上部電極は、主面に刻設された放射状の溝および当
該溝の先端部に穿設された透孔を含む複数の板材を、放
射状の前記溝の中心が、より上側の前記板材の前記透孔
に重なり合って連通するように気密に積み重ねることに
より、複数の前記板材の互いに連通する前記溝および前
記透孔にて、分岐管路が構成されるようにしたことを特
徴とするプラズマ処理方法。2. The plasma processing method according to claim 1, wherein the upper electrode includes a plurality of plate members including radial grooves engraved on the main surface and through holes formed at the tip of the grooves. By stacking airtightly so that the center of the radial groove overlaps and communicates with the through hole of the plate member on the upper side, the branch conduit with the groove and the through hole that communicate with each other of the plurality of plate members. A plasma processing method, characterized in that
して処理ガスを供給し、前記処理ガスをプラズマ化して
前記被処理物に所望のプラズマ処理を施すプラズマ処理
方法において、 前記被処理物に対向する上部電極が、積層した複数の管
路板により構成され、 前記各管路板には前記処理ガスを分岐して、所望の分布
のコンダクタンスを持って流すために、管路となる溝
と、各管路板を貫通する前記処理ガスの流路となる透孔
の寸法を独立に変えて穿設し、 １つのガス供給孔より最上層の前記管路板へ前記処理ガ
スを供給し、 前記処理ガスを前記複数の管路板によって階層的に分岐
して、最下層の前記管路板の透孔より前記処理室内へ前
記処理ガスを供給して、前記プラズマ処理を行うことを
特徴とするプラズマ処理方法。 3. An object to be processed housed inside a processing chamber.
And supply the processing gas, and the processing gas is turned into plasma.
Plasma processing for subjecting the object to be processed to desired plasma processing
In the method, the upper electrode facing the object to be processed has a plurality of stacked tubes.
It is composed of a channel plate, and the processing gas is branched to each of the channel plates to obtain a desired distribution.
A groove that serves as a conduit for flowing with conductance of
And a through hole serving as a flow path of the processing gas that penetrates each conduit plate
The size of each processing hole is changed independently, and the processing gas is introduced from one gas supply hole to the uppermost line plate.
Gas is supplied, and the processing gas is hierarchically branched by the plurality of conduit plates.
Then, through the through hole of the bottom line of the conduit plate into the processing chamber.
Supplying a processing gas to perform the plasma processing
A characteristic plasma processing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32992397A JP3501930B2 (en) | 1997-12-01 | 1997-12-01 | Plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32992397A JP3501930B2 (en) | 1997-12-01 | 1997-12-01 | Plasma processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11158662A JPH11158662A (en) | 1999-06-15 |
| JP3501930B2 true JP3501930B2 (en) | 2004-03-02 |
Family
ID=18226787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32992397A Expired - Fee Related JP3501930B2 (en) | 1997-12-01 | 1997-12-01 | Plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3501930B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8402829B2 (en) | 2005-01-03 | 2013-03-26 | Jet-Guide Ltd. | Interactive ultrasound-based depth measurement for medical applications |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3935642B2 (en) * | 1999-06-30 | 2007-06-27 | 松下電器産業株式会社 | Plasma processing apparatus and method |
| TWI246873B (en) * | 2001-07-10 | 2006-01-01 | Tokyo Electron Ltd | Plasma processing device |
| JP4239520B2 (en) * | 2002-08-21 | 2009-03-18 | ソニー株式会社 | Film forming apparatus, method for manufacturing the same, and injector |
| KR100862658B1 (en) * | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | Gas injection device of semiconductor processing system |
| KR101170861B1 (en) * | 2004-09-01 | 2012-08-03 | 액셀리스 테크놀로지스, 인크. | Plasma ashing process for increasing photoresist removal rate and plasma apparatus with cooling means |
| KR100606561B1 (en) * | 2004-12-23 | 2006-08-01 | 주식회사 에이디피엔지니어링 | Plasma processing equipment |
| CN100451163C (en) * | 2006-10-18 | 2009-01-14 | 中微半导体设备(上海)有限公司 | Gas distribution device for treating reactor by semiconductor technological element and reactor thereof |
| JP5328134B2 (en) * | 2007-10-31 | 2013-10-30 | キヤノン株式会社 | Vapor deposition apparatus and organic electroluminescence element manufacturing method |
| JP5718011B2 (en) * | 2010-10-13 | 2015-05-13 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply structure thereof |
| TWI568319B (en) | 2011-10-05 | 2017-01-21 | 應用材料股份有限公司 | Plasma processing apparatus and lid assembly thereof (2) |
| JP6157061B2 (en) | 2012-05-11 | 2017-07-05 | 東京エレクトロン株式会社 | Gas supply apparatus and substrate processing apparatus |
| JP2014057047A (en) * | 2012-08-10 | 2014-03-27 | Tokyo Electron Ltd | Substrate processing apparatus and gas supply apparatus |
| JP5862529B2 (en) * | 2012-09-25 | 2016-02-16 | 東京エレクトロン株式会社 | Substrate processing apparatus and gas supply apparatus |
| JP6078354B2 (en) * | 2013-01-24 | 2017-02-08 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP6628065B2 (en) * | 2016-09-05 | 2020-01-08 | 信越半導体株式会社 | Vapor phase growth apparatus, method for manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus |
-
1997
- 1997-12-01 JP JP32992397A patent/JP3501930B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8402829B2 (en) | 2005-01-03 | 2013-03-26 | Jet-Guide Ltd. | Interactive ultrasound-based depth measurement for medical applications |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11158662A (en) | 1999-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3501930B2 (en) | Plasma processing method | |
| TWI598989B (en) | Thermal plate and substrate support assembly comprising the thermal plate and method for manufacturing the thermal plate | |
| US5177878A (en) | Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices | |
| TWI618174B (en) | Heating plate with diode planar heater zones for semiconductor processing | |
| KR0129663B1 (en) | Method and apparatus for etching process | |
| JP4565743B2 (en) | Semiconductor processing chamber electrode and method of manufacturing the same | |
| JP3742349B2 (en) | Plasma processing equipment | |
| JPH09232415A (en) | Substrate cooling apparatus, chemical vapor reaction apparatus and substrate temperature control method | |
| US20090194264A1 (en) | Substrate mounting table, substrate processing apparatus and substrate temperature control method | |
| JP2011508436A (en) | Method and apparatus for controlling the temperature of a substrate | |
| JP2015008287A (en) | Temperature controlled substrate support assembly | |
| US6627558B2 (en) | Apparatus and method for selectively restricting process fluid flow in semiconductor processing | |
| WO2019204125A1 (en) | Ceramic wafer heater having cooling channels with minimum fluid drag | |
| TW202046441A (en) | Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns | |
| JPH07335630A (en) | Vacuum processing device | |
| JPH05243191A (en) | Dry etching device | |
| JP2002076103A (en) | Method and apparatus for controlling temperature of sample stage, and method and apparatus for processing sample | |
| WO1994006571A1 (en) | Film uniformity by selective pressure gradient control | |
| CN116072584A (en) | Multi-zone temperature-controlled electrostatic chuck and plasma processing apparatus | |
| JP7583663B2 (en) | Upper Electrode Assembly | |
| CN116825709A (en) | Semiconductor device and control method thereof | |
| JPS62123721A (en) | Treater | |
| TW202141666A (en) | Faceplate with localized flow control | |
| JP4063689B2 (en) | Plasma processing equipment | |
| JPS6136931A (en) | Control method of temperature of wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20031203 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071212 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081212 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081212 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091212 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |