JP3501768B2 - Substrate heat treatment apparatus and method of manufacturing flat panel device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate heat treatment apparatus for heat treating a substrate on which a semiconductor or the like is formed, and a method for manufacturing a flat panel device manufactured through a substrate heat treatment process.

[0002]

2. Description of the Related Art In a manufacturing process for forming a semiconductor device such as an LSI or a semiconductor such as a transistor on a glass substrate, a heat treatment step is carried out for performing activation, oxidation, hydrogenation treatment, etc. by heat treating the substrate. In such a substrate heat treatment process, a batch-type heat treatment apparatus that heat-treats a plurality of substrates simultaneously in a quartz glass reaction tube, or a high-speed heat treatment apparatus that heats the substrates one by one by light irradiation using a lamp is used. It

[0003]

When a batch type heat treatment apparatus is used in the above heat treatment process, the substrates are arranged vertically or horizontally at a small pitch in order to improve the treatment capacity, and then the heat treatment is carried out in a heating furnace. And heat the substrate. However, since a large amount of substrates are heated at the same time in this method, it takes a long time to raise and lower the temperature, and the temperature inside the substrate tends to become nonuniform. There is also a problem due to the substrate being kept in a heated state for a long time. That is, the substrate itself shrinks due to heating for a long time,
It causes expansion and causes misalignment in the subsequent exposure process. In particular, when a glass substrate is used, this point becomes a fatal defect, and therefore, the heat treatment for a long time at high temperature must be abandoned.

On the other hand, when the heating method by light irradiation using a lamp is adopted in the above heat treatment step, the heat treatment can be performed at a higher speed. However, when the physical phenomenon of excitation by light is used, it is difficult to keep the temperature uniform, and for example, the temperature on the substrate becomes non-uniform due to the state of the device formed on the substrate. . Particularly in the case of a glass substrate, the temperature of each part of the pattern depends on factors such as the state of the pattern formed on the glass substrate, for example, whether the pattern is metal, whether it transmits, absorbs, or reflects light. It may change and the temperature difference in the substrate may increase. Such non-uniformity of temperature causes warpage or distortion of the substrate, which may easily damage the device.

It is an object of the present invention to provide a substrate heat treatment apparatus capable of high-speed processing and capable of uniformly heating a substrate.

[0006]

A substrate heat treatment apparatus according to the present invention is a process chamber (2) for accommodating a substrate (1).
A heating furnace (3) provided above the process chamber (2), a heating pipe (4) formed by bending along the upper wall of the process chamber (2), and a substrate (1). A perforated plate which is formed in a conformal shape and divides the process chamber (2) in the vertical direction, and a process chamber in which the heating gas that is overheated when passing through the heating pipe (4) is partitioned by the perforated plate. A diffuser (21 etc.) for discharging into the space above (2), passing through the holes of the perforated plate and diffusing and spraying on the substrate surface in the process chamber (2), and a diffuser (21 etc.) Through the board (1)
A substrate elevating device (7) for moving the substrate (1) between an upper position in which a heating gas is blown against and a lower position in the process chamber (2) lower than the upper position.
And are provided.

According to this substrate heat treatment apparatus, since the substrate can be heated by blowing the heating gas through the diffusion device, the substrate can be heated at high speed and uniformly. A plurality of heating pipes may be provided corresponding to a plurality of zones, and in this case, a plurality of heating furnaces that heat the plurality of heating pipes may be provided. Further, each heating furnace may be independently controllable.

The heating pipe (4) may be bent and formed in a region heated by the heating furnace (3).

In this case, since the length of the heating pipe in the area heated by the heating furnace (3) can be increased, the heating gas can be efficiently heated.

The diffusion device (21, etc.) has a space (26) for receiving the heating gas from the heating pipe and a space (26).
And the substrate (1) in the upper position may be communicated with each other, and the heating gas may be diffused by passing the heating gas from the space (26) through the path.

In this case, since the heating gas is injected from the space through the path, the substrate can be heated uniformly. Note that it is desirable that the plurality of paths be formed so that the heating gas can be uniformly sprayed over the entire surface of the substrate. A perforated plate may be used as the diffusion device.

The heating furnace (3) may heat the heating pipe (4) and directly heat the substrate (1) at the upper position.

In this case, the substrate can be heated at a higher speed due to the heating effect of the heating gas and the direct heating effect of the heating furnace.

A cooling gas supply device (9) for supplying a cooling gas into the process chamber (2) while the substrate (1) is moved from the upper position to the lower position by the substrate elevating device (7).
May be provided.

In this case, the substrate can be cooled at high speed and uniformly by the cooling gas while the substrate is moved from the upper position to the lower position.

The flat panel device manufacturing method of the present invention comprises a process chamber (2) for accommodating a substrate (1).
A heating furnace (3) provided above the process chamber (2), a heating pipe (4) formed by bending along the upper wall of the process chamber (2), and a substrate (1). A perforated plate which is formed in a conformal shape and vertically divides the process chamber (2), and a process chamber in which the heating gas heated when passing through the heating pipe (4) is partitioned by the perforated plate. A diffuser (21 etc.) for discharging into the space above (2), passing through the holes of the perforated plate and diffusing and spraying on the substrate surface in the process chamber (2), and a diffuser (21 etc.) Through the board (1)
A substrate elevating device (7) for moving the substrate (1) between an upper position in which a heating gas is blown against and a lower position in the process chamber (2) lower than the upper position.
And a step of heating the substrate (1) with a heating gas at an upper position.

According to this method of manufacturing a flat panel device, since the substrate can be heated by blowing the heating gas through the diffusion device, the substrate can be heated at high speed and uniformly. A perforated plate may be used as the diffusion device. A plurality of heating pipes may be provided corresponding to a plurality of zones, and in this case, a plurality of heating furnaces that heat the plurality of heating pipes may be provided. Further, each heating furnace may be independently controllable.

The heating pipe (4) may be bent and formed in a region heated by the heating furnace (3).

In this case, since the length of the heating pipe in the area heated by the heating furnace (3) can be increased, the heating gas can be efficiently heated.

The diffusion device (21, etc.) is provided with a heating pipe (4).
Has a space (26) for receiving the heating gas from the space (26) and a plurality of paths for communicating between the space (26) and the substrate (1) in the upper position, and the heating gas has a path from the space (26). The heating gas may be diffused by passing through.

In this case, since the heating gas is injected from the space through the path, the substrate can be heated uniformly. Note that it is desirable that the plurality of paths be formed so that the heating gas can be uniformly sprayed over the entire surface of the substrate.

The heating furnace (3) may heat the heating pipe (4) and directly heat the substrate (1) at the upper position in the above process.

In this case, the substrate can be heated at a higher speed due to the heating effect of the heating gas and the direct heating effect of the heating furnace.

It may also include the step of cooling the substrate (1) by supplying a cooling gas into the process chamber (2) while the substrate (1) is moved from the upper position to the lower position by the substrate elevating device (7). Good.

In this case, the substrate can be cooled at high speed and uniformly by the cooling gas while the substrate is moved from the upper position to the lower position.

In order to facilitate understanding of the present invention, reference numerals in the accompanying drawings are added in parentheses, but the present invention is not limited to the illustrated forms.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a substrate heat treatment apparatus according to the present invention will be described below with reference to FIGS. This substrate heat treatment apparatus is used, for example, for heat treatment of a substrate of a flat panel device, but the substrate is not limited to this.

FIG. 1 is a sectional view of the substrate heat treatment apparatus of this embodiment, FIG. 2 is a view showing the shape of the heating pipe viewed from the direction II-II of FIG. 1, and FIG. 3 is another heating pipe shape. FIG.

As shown in FIGS. 1 and 2, the substrate heat treatment apparatus 100 of the present embodiment includes a quartz process tube 2 for accommodating the substrate 1, a heating furnace 3 attached to the upper portion of the process tube 2, and a process. The quartz heating pipe 4 arranged on the upper surface of the tube 2, the ring-shaped preheating furnace 5 provided inside the process tube 2, the flange 6 for supporting the process tube 2 from below, and the substrate 1 A substrate elevator 7 for vertically moving inside the process tube 2 is provided.

An O-ring (not shown) or a sealing material such as tetrafluoroethylene is interposed between the process tube 2 and the flange 6 to maintain the airtightness between the process tube 2 and the flange 6. Be drunk

As shown in FIG. 1, the inside of the process tube 2 is partitioned in the vertical direction in FIG. 1 by a perforated plate 21 having a large number of holes (paths) formed therein. Also,
On the side wall of the process tube 2, a door 22 for loading and unloading the substrate, gas exhaust ports 23 and 24 for exhausting gas in the process tube 2, and cooling for cooling the substrate 1 in the process tube 2. A cooling gas introduction port 25 for introducing a working gas is provided respectively. Note that FIG. 1 illustrates a state in which the process tube 2 is opened and a state in which the process tube 2 is closed so as to maintain airtightness by moving the door 22 left and right.

The ring-shaped preheating furnace 5 is surrounded by a quartz cover 5a, whereby the process tube 2 is formed.
It prevents the inside pollution.

The heating furnace 3 is attached to the process tube 2 so as to maintain the airtightness inside the process tube 2. As shown in FIG. 1, the heating furnace 3 includes a furnace body 3a that covers the opening of the process tube 2 and a heater 3b attached to the inner surface side of the furnace body 3a. The heater 3b is composed of a resistor, and the heater 3b is formed by applying a voltage to the resistor.
b is heated. In order to prevent the inside of the process tube 2 from being contaminated due to the heater 3b and to make it possible to uniformly heat the substrate 1, the inner surface of the heating furnace 3 is made of a semitransparent or frosted quartz glass that covers the heater 3b. The cover 31 is attached.

As shown in FIG. 1, the substrate elevator 7 is attached to the flange 6 while maintaining the airtightness of the process tube 2. The substrate elevator 7 is attached to an upper end of the arm 71, an arm 71 that penetrates an opening formed in the center of the preheating furnace 5 and the cover 5a, an actuator 72 that vertically drives the arm 71 in FIG. A substrate holder 73 made of quartz or carbon for supporting the substrate 1 is provided. The substrate holder 73 has a structure in which a quartz plate 73a, which is horizontally supported and has an appropriate size, is welded to a quartz pin 73b. Board 1 has pins 73
It is held in contact with b. The size of the substrate holder 73 is
It is determined according to the size of the substrate 1 and the size of the horizontal cross section inside the process tube 2, and also has a role of adjusting the conductance of the exhaust gas.

As shown in FIG. 1, above the perforated plate 21, a space 26 having a predetermined gap is formed between the perforated plate 21 and the inner wall surface of the process tube 2. The gap (the vertical width in FIG. 1) of the space 26 is, for example, 1
It is set to about 2 mm. The size of the gap is 10 to 15 m
About m is desirable.

As shown in FIGS. 1 and 2, on the upper surface of the process tube 2, a heating pipe 4 which is formed by being bent in a complicated manner is attached. A heating gas outlet 4a is provided at one end of the heating pipe 4, and a heating gas inlet 4b is provided at the other end.
Each is provided. As shown in FIG. 1, the heating gas inlet 4 b penetrates the heating furnace 3. Further, the gas discharge port 4 a penetrates the partition wall of the process tube 2 and opens in the space 26 between the perforated plate 21 and the inner wall surface of the process tube 2. Further, a temperature-falling gas introduction port 9 for introducing a gas for cooling the substrate 1 penetrates through the partition walls of the heating furnace 3 and the process tube 2 and opens in the space 26.

As shown in FIG. 2, since the gas discharge port 4a opens near the center of the process tube 2, the gap 2
The gas pressure in the vicinity of the center of 6 becomes high, and the gas ejection amount near the center tends to increase. Therefore, by making the diameter of the holes of the perforated plate 21 small near the center of the process tube 2 and large in the peripheral portion, the blowing amount of the heating gas can be made uniform over the entire substrate 1. Further, the frequency (number per area) of the holes may be increased in the peripheral portion of the process chamber 2 while forming the diameter of the holes constant.

The diameter of the hole is preferably about 0.5 to 1 mm.

Next, the procedure of heat treatment of the substrate using the substrate heat treatment apparatus 100 will be described.

First, the door 22 of the process tube 2 is opened and the substrate 1 is set on the substrate holder 73. At this time,
Gas is introduced through the temperature-introducing gas inlet 9 (gas flow rate: 8
0 ~ 100l / min), after setting the substrate 1, the door 22
Close. At this time, the substrate 1 is at the lowest temperature in the process tube 2 which is the lowest point of the drive range of the elevator 7. Figure 1
Indicates the position of the substrate 1 at this time.

Next, preheating is performed while the gas is flowing from the temperature-falling gas introduction port 9. The preheating is performed by the heater 3b of the heating furnace 3 and the heater of the preheating furnace 5. The temperature of the heater 3b is set to a preset temperature (for example, 800
C)).

After the preheating is completed, the arm 71 of the elevator 7 is driven to move the substrate 1 placed on the substrate holder 73 to the uppermost heating position. FIG. 1 shows the position of the substrate 1 at this time. While raising the substrate 1, the flow rate of the temperature-lowering gas is decreased and the flow rate of the heating gas supplied through the heating pipe 4 is increased to raise the temperature of the substrate 1. This operation is performed while the substrate 1 moves from the lowest point to the highest point.

After the substrate 1 reaches the uppermost point, the introduction of the temperature lowering gas is stopped and only the heating gas is introduced through the heating pipe 4 (gas flow rate: 20 l / min to 50 l / min). Further, the temperature of the heating furnace 3 is reset and the heater 3b of the heating furnace 3 is set.
The substrate 1 is controlled to a predetermined temperature (for example, 72
Heat at 0 ° C. for a predetermined time. While the heating gas passes through the heating pipe 4, the heating gas is heated by the heating furnace 3.
The heating gas supplied to the space 26 is dispersed when passing through the holes of the perforated plate 21, and then hits the entire substrate 1 and flows along the surface of the substrate 1 to uniformly heat the substrate 1. After that, the gas passes between the substrate 1 and the process tube 2 and is exhausted through the exhaust ports 23 and 24.

As described above, by supplying the heating gas through the perforated plate 21 in the state where the substrate 1 is brought close to the perforated plate 21, the gas can be stirred on the surface of the substrate 1, The temperature of the surface can be made uniform, and the temperature can be kept constant for a predetermined time.

At this time, the substrate 1 is also directly heated by the heat of the heating furnace 3. The process chamber 2 is made of opaque or frosted glass-like quartz in order to minimize the influence of the light emitted from the heating furnace 3 and to disperse the light.

As described above, the substrate 1 is heated by the heating furnace 3 and
It is heated at high speed and uniformly by the energy transfer and heat conduction of the heating gas.

Next, the arm 71 of the elevator 7 is driven to gradually lower the substrate 1 placed on the substrate holder 73 from the uppermost point to the lowermost point, thereby uniformly lowering the temperature of the entire substrate 1. At this time, the setting and power of the heater 3b of the heating furnace 3 are adjusted, the flow rate of the heating gas is reduced, and the flow rate of the temperature-falling gas introduced from the temperature-falling gas introduction port 9 is increased. This operation is repeated until the substrate 1 reaches the lowest point.
At this time, the temperature of the temperature-lowering gas is set appropriately (for example, 400 to
By setting the temperature to 500 ° C.), the temperature of the substrate 1 can be rapidly lowered without increasing the temperature difference in the substrate 1. In order to lower the temperature without damaging the substrate 1, the flow rate of the temperature-lowering gas and the substrate 1 by the elevator 7 are set.
It is necessary to properly adjust the descent speed of. Especially when the substrate 1 is a glass substrate, if there is a large temperature difference in the substrate 1 at a high temperature, warping, distortion, or cracking may occur. Therefore, it is an indispensable factor in the process of high temperature heat treatment to reduce the temperature rapidly while suppressing the temperature difference in the substrate 1. According to the apparatus of the present embodiment, when the temperature is lowered, the temperature-lowering gas is evenly sprayed on the substrate surface to stir the gas, and the substrate 1 can be gradually moved away from the heat source. Is possible.

When the substrate 1 reaches the lowest point, the supply of the temperature lowering gas and the heating gas are both stopped, and the gas is introduced from the cooling gas inlet 25 to cool the substrate 1. As a result, the substrate 1 can be cooled to a temperature at which it can be transported by the robot while being placed on the substrate holder 73. At this time, the power of the heater 3b of the heating furnace 3 may be 0. After the temperature of the substrate 1 has dropped to the set temperature, the door 22
Open and take out the substrate 1.

The substrate 1 can be sequentially heated by repeating the above cycle.

In the present embodiment, the substrate 1 can be set at the lowest point first and the substrate 1 can be heated to a constant temperature at this position, so damage to the substrate due to sudden temperature rise can be prevented.

FIG. 3 shows another heating pipe which replaces the heating pipe 4 of this embodiment.

As described above, the substrate heat treatment apparatus of the present invention can uniformly raise and lower the temperature of the entire substrate. However, this temperature uniformity tends to deteriorate as the size of the substrate increases. In fact, a glass substrate having a side length of 1 m or more has also appeared, and a large substrate is likely to have a temperature difference between the central portion and the peripheral portion of the substrate.

As shown in FIG. 3, in the heating pipe 4A, the inside of the process tube 2 is divided into five zones Z1 to Z5 in the horizontal plane. Each zone Z1 to Z5
Are provided with pipes 41 to 45 that are respectively bent in a complicated manner. The pipes 41 to 45 have heating gas outlets 41a to 45a similar to the heating gas outlet 4a and heating gas inlets 41b to 45 similar to the heating gas inlet 4b, respectively.
b are provided, and the heating gas discharge ports 41a to 45a are opened to the space 26 shown in FIG.

The heater of the heating furnace 3 is used for each zone Z1.
.. to Z5, the zones are divided, and each zone Z1 to Z5 is independently controlled. Thereby, the temperature of the heating gas discharged to each of the zones Z1 to Z5 can be appropriately controlled.

With such a structure, it is possible to rapidly raise or lower the temperature of the entire substrate without causing a temperature difference between the central portion and the peripheral portion even for a large substrate. Become.

[0056]

According to the substrate heat treatment apparatus of the present invention, the substrate can be heated by blowing the heating gas through the diffusion device, so that the substrate can be heated at high speed and uniformly.

According to the method of manufacturing a flat panel device of the present invention, the substrate can be heated by blowing the heating gas through the diffusion device, so that the substrate can be heated at high speed and uniformly.

[Brief description of drawings]

FIG. 1 is a sectional view of a substrate heat treatment apparatus of this embodiment.

FIG. 2 is a view showing the shape of a heating pipe viewed from the direction of the line II-II in FIG.

FIG. 3 is a view showing the shape of another heating pipe.

[Explanation of symbols]

1 substrate 2 process chamber 3 heating furnace 4 Heating piping 7 Board lifter (board lifter) 9 Cooling gas inlet (cooling gas supply device) 21 Perforated Plate (Diffuser) 26 space

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-9-260364 (JP, A) JP-A-3-235329 (JP, A) JP-A-2-187015 (JP, A) JP-A 2002-353226 (JP, A) JP-A-7-147239 (JP, A) JP-A-10-242024 (JP, A) JP-A-4-238892 (JP, A) Special Table 2003-514377 (JP, A) (58) ) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 21/26-21/268 H01L 21/322-21/326 H01L 21/205

Claims (10)

(57) [Claims] 1. A process chamber for accommodating a substrate, a heating furnace provided above the process chamber, and a bend formed along an upper wall of the process chamber.
The heating pipe and the process chamber formed along the substrate.
The perforated plate that divides the bar in the vertical direction and the heating gas heated when passing through the heating pipe
Of the process chamber defined by the perforated plate
Discharge into the upper space, and then pass through the holes in the perforated plate.
A diffusing device for diffusing and blowing the substrate surface in the process chamber; an upper position where the heating gas is blown to the substrate through the diffusing device, and the process chamber lower than the upper position. A substrate elevating device for moving the substrate between lower positions of the substrate heat treatment device. 2. The substrate heat treatment apparatus according to claim 1, wherein the heating pipe is bent and formed in a region heated by the heating furnace. 3. The diffusion device has a space for receiving a heating gas from the heating pipe, and a plurality of paths for communicating between the space and the substrate at the upper position, The substrate heat treatment apparatus according to claim 1 or 2, wherein the heating gas is diffused by passing the heating gas from the space through the path. 4. The substrate according to claim 1, wherein the heating furnace heats the heating pipe and directly heats the substrate at the upper position. Heat treatment equipment. 5. A cooling gas supply device for supplying a cooling gas into the process chamber while the substrate elevating device moves the substrate from the upper position to the lower position. 4. The substrate heat treatment apparatus according to any one of 4 above. 6. A process chamber for accommodating a substrate, a heating furnace provided above the process chamber, and a bend formed along an upper wall of the process chamber.
The heating pipe and the process chamber formed along the substrate.
The perforated plate that divides the bar in the vertical direction and the heating gas heated when passing through the heating pipe
Of the process chamber defined by the perforated plate
Discharge into the upper space, and then pass through the holes in the perforated plate.
A diffusing device for diffusing and blowing the substrate surface in the process chamber; an upper position where the heating gas is blown to the substrate through the diffusing device, and the process chamber lower than the upper position. A method of manufacturing a flat panel device using a substrate heat treatment apparatus comprising: a substrate elevating device that moves the substrate between lower positions of the step of heating the substrate with the heating gas at the upper position. A method for manufacturing a flat panel device, comprising: 7. The method for manufacturing a flat panel device according to claim 6, wherein the heating pipe is bent in a region heated by the heating furnace. 8. The diffusion device has a space for receiving a heating gas from the heating pipe, and a plurality of paths for communicating the space and the substrate at the upper position with each other. The method for manufacturing a flat panel device according to claim 6 or 7, wherein the heating gas is diffused by passing the heating gas from the space through the path. 9. The heating furnace heats the heating pipe, and in the step, directly heats the substrate at the upper position.
The method for manufacturing a flat panel device according to any one of 1. 10. The method comprises cooling the substrate by supplying a cooling gas into the process chamber while the substrate elevating device moves the substrate from the upper position to the lower position. Claims 6-9
The method for manufacturing a flat panel device according to any one of 1.