JP3489299B2 - Surface modification equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to surface-modified equipment to modify the surface of the modifying material consisting of and chemically stable organic substances having a hydrophobic surface hydrophilic.

[0002]

2. Description of the Related Art Organic substances, particularly fluororesins with extremely high corrosion resistance, are used as container materials such as highly corrosive solutions and as protective layer materials for sensors or structures operated in corrosive gases or corrosive solutions. Many are used.

However, these fluororesin products have a very high surface hydrophobicity, and after molding, a thin film is deposited on any part by vapor deposition or plating for decoration, or surface heat conductivity or light reflection. It was extremely difficult to impart properties, surface conductivity, and the like.

Therefore, conventionally, various methods for modifying the hydrophobic surface have been proposed and tried for the purpose of depositing a thin film on the surface of Teflon or the like. For example, JP-A-4
JP-A-365875 discloses a method of chemically modifying the surface of a fluororesin using sodium (Na) and aqueous ammonia.

However, in such a method of immersing the material to be modified in a solution, the concentration of the solution and the control of contamination are extremely complicated, and the material to be modified has a fine structure such as minute projections and beams. When it has, there is a concern that these fine structures will be destroyed by the surface tension of the solution. Also,
When the shape of the material to be modified is complicated, there is a possibility that process unevenness depending on the flow of the solution may occur.

On the other hand, a plasma method or the like has been proposed as a surface modification method which does not use a solution (for example, Japanese Patent Laid-Open No. 63-63).
-308920 gazette). In this method, the energy of plasma is used to physically and chemically modify the surface layer of the organic material, and an inert gas such as argon is used as a gas for plasma generation.

According to such a method, the surface of the material to be modified is physically etched and cleaned by the ions existing in the plasma, and minute irregularities are formed on the surface of the material during the cleaning process. As a result, the adhesion area of the deposited thin film is increased, and the adhesive force is improved.

In this method, however, the interatomic bond which is the origin of the adhesive force of the thin film is the van der Waals force (bonding energy; about 0.1 eV), so that the effect of increasing the adhesive force is small.

As a chemical modification effect of Teflon by oxygen plasma, it has been reported that the surface layer thereof becomes hydrophilic by oxidation. It has also been reported that the argon plasma treatment improves the hydrophilicity of the Teflon surface, resulting in an increase in the adhesive force of the thin film. It is considered that this adhesive force basically depends on the polarity induced by surface oxygen atoms.

However, in this case, there is no sharing of electrons between oxygen atoms and thin film atoms. Therefore, this method is considered to have a small effect of increasing the binding force chemically. Further, the shape of the plasma is generally spherical or ellipsoidal, though it depends on the shape of the electrode for generating the plasma and the positional relationship. And it is difficult to strictly control the plasma shape. Therefore, when the material to be modified is minute or has a complicated shape, the plasma cannot follow the shape of the material and, as in the case of the in-solution processing described above, there is a possibility that processing unevenness occurs. There is also.

On the other hand, a laser is used to selectively adsorb hydroxyl (OH) groups, which have a greater hydrophilic effect (molecular polarity) than oxygen, to the surface of the material to be modified, thereby forming a thin film such as plating. A method of firmly adhering is also proposed (for example, see Japanese Patent Laid-Open No. 2-196834).

This is because in a gas containing a hydroxyl group or a lipophilic group, only the portion of the surface of the material to be modified which is to be modified is irradiated with a laser, and the photochemical reaction is utilized to adsorb the hydroxyl group on the surface of the material. In addition to the above, the hydrophilic effect selectively deposits a plating film or the like.

However, in this method, since it is necessary to use a special gas or solution for the treatment, the control of the flow rate and the purity thereof is complicated, and the washing of the material as the pretreatment needs to be performed separately. There is no choice but to complicate the processing process.

Further, in the case where the material to be modified has a complicated shape for the purpose of irradiating with a laser, if the focal point is focused on a specific point, the other portions will be out of focus. Therefore, if you try to irradiate a plurality of sites on the surface of the same material with laser,
Such focus adjustment is necessary, and its operation becomes extremely complicated.

Moreover, in this method, the equipment for implementing such processing is also very expensive.

[0016]

As described above, various methods for modifying the hydrophobic surface have been proposed and attempted for the purpose of depositing a thin film on the surface of Teflon or the like. (I) Management and processing processes are extremely complicated. (Ii) Sufficient adhesion of the thin film cannot be obtained. (Iii) When the material to be modified has a fine or complex structure, there is a concern that breakage or uneven processing may occur. (Iv) Equipment is expensive. And so on, there are still many problems in practice.

The present invention has been made in view of these circumstances, and is easy to manage and process, and is sufficient for obtaining a strong adhesion of a thin film even on a hydrophobic surface such as a fluororesin. An object of the present invention is to provide a surface reforming device which exhibits hydrophilicity and can stably and easily reform the surface of any shape of the material to be reformed, and which is inexpensive in terms of equipment.

[0018]

[0019]

[0020]

As a surface modification device, according to the invention of claim 1, (a) a vacuum container in which the material to be modified is mounted, (b) a material to be modified is mounted. A hydrophilic group introducing means for introducing a gas or water vapor containing a hydrophilic group into the vacuum container, (c) an ion source disposed in the vacuum container for ionizing the gas or water vapor containing the introduced hydrophilic group, (d) According to the configuration including ion irradiation means for irradiating the surface of the material to be modified with the ions of the ionized hydrophilic group, the surface of the material to be modified is directly irradiated with the ions of gas or water vapor containing the hydrophilic group. Is only done,
The physical energy causes substitution of the surface atoms with hydroxyl (OH) groups or adsorption of the hydroxyl groups based on the bonding of hydrogen to oxygen atoms on the surface. That is, the surface of the material to be modified is modified to have hydroxyl groups substituted or adsorbed (improved hydrophilicity) without using the laser or special gas. Therefore, when a thin film material is subsequently deposited by plating, vapor deposition or the like, it is possible to obtain a very strong bond in which the atoms of the thin film material and the atoms of the material to be modified are bonded by hydrogen bonds. Also becomes.

Further, according to the same construction as the surface reforming apparatus, the surface of the material to be reformed is reformed by the ions whose spreading degree and convergence state are easily controlled (hydroxyl group is substituted or adsorbed). Therefore, even if the material to be modified has a complicated shape, uniform surface modification according to the shape can be realized.

Moreover, with such ion irradiation, there is no fear of damaging the surface of the material to be modified. Further, the same structure as the surface modification device is simple in management and treatment process, and is inexpensive in terms of equipment as compared with the above-mentioned device using a laser or the like.

Further, the upper Symbol ion irradiation unit, - the one comprising a thermionic emission filament to neutralize the ions irradiated to the surface of the modifying material (neutralizer). With this configuration, the above-mentioned ions are irradiated as neutral ions on the surface of the material to be modified, and even when the material to be modified is made of an insulator such as fluororesin, the surface is charged up. It will not be done.
That is, the substitution or adsorption of the hydroxyl group on the surface of the material to be modified can be stably performed.

According to the second aspect of the present invention, the ion irradiation means includes: an ion extraction grid arranged along the three-dimensional shape of the material to be modified. With such a configuration, it becomes possible to more suitably control the irradiation of ions, which can easily control the extent of spread and the manner of convergence, according to the three-dimensional shape of the material to be modified. That is, even if the material to be modified has a three-dimensionally complicated shape, the surface modification can be performed more uniformly.

Further, according to the invention of claim 3 , the ion irradiating means includes: -a surface of the material to be modified is partially masked (shielded);
A mask means for selectively irradiating the area other than the masked area with the ions of the hydrophilic group (gas or water vapor containing the hydrophilic group). With this configuration, only a desired portion of the surface of the material to be modified is selectively modified to be hydrophilic, and thus only the thin film deposited on the modified portion is firmly adhered to the surface of the material to be modified. Will be able to be attached to. In other words, when the material to be modified is, for example, a fluororesin, a thin film deposited on a portion other than the modified portion of the surface is hardly provided with adhesive force, and an adhesive tape or an appropriate jig is used. When it is peeled off by using it, it can be easily peeled off from the surface of the same material. Therefore, for example, it becomes easy to apply a decoration by a thin film or a wiring pattern on the hydrophobic surface of the fluororesin or the like.

Further, in particular, when the mask means is provided as in the invention according to claim 4 , if the mask means is constituted as a conductive mask held at the ground potential, the filament for thermionic emission is not always required. Neutralization of ions can be realized without using a (neutralizer). That is, even when the material to be modified is made of an insulating material, the surface thereof is not charged up, and the substitution or adsorption of hydroxyl groups on the surface of the material can be stably performed. According to the invention of claim 5,
In so that, (e) any to-be-reformed material disposed in the vacuum container
Exercise imparting means for imparting exercise. If it is configured to include
Uniform ions for any shape of the material to be modified
Irradiation comes to be realized. That is, the material to be modified
However, even if it has a bottle-like shape,
I will give it a motion such as rotation through the motion imparting means.
By doing so, there is no need to operate the above ion source or ion irradiation means.
Even without doing so, ions can be uniformly distributed over the entire surface of the material to be modified.
You will be able to irradiate.

Further, according to the sixth aspect of the present invention, in these configurations as the surface reforming apparatus, ( f ) irradiating the surface of the material to be modified mounted in the vacuum container with a high energy beam. Cleaning means to clean this. If it is configured such that even if dust or impurities are attached to the surface of the material to be modified, it can be suitably removed, then the gas or steam containing the hydrophilic group described above. If the ion irradiation is performed, the substitution or adsorption of the above hydroxyl group on the surface of the same material can be suitably performed.

In this case, the cleaning means may be the same as in claim 7.
According to the invention as described above, the surface of the material to be modified is cleaned by ion etching in which an inert gas or the water vapor is ionized. Can be configured as.

Particularly, in the case of a structure for cleaning the surface of the material to be modified by ion etching in which a gas containing a hydrophilic group or water vapor is ionized, the above structure according to the invention of claims 1 to 5 is used as it is. Thus, the processing for the cleaning can be performed together.

When the surface of the material to be modified is cleaned by ion etching in which an inert gas is ionized, according to the invention of claim 8, the material to be modified is mounted. An inert gas introducing means for introducing an inert gas into the vacuum container, an ion source disposed in the vacuum container for ionizing the introduced inert gas, and the ionized inert ion An ion irradiation means for irradiating the surface of the material to be modified. As the above, the cleaning means can be configured.

Also in this case, as a pretreatment for the above-mentioned irradiation of water vapor ions on the surface of the material to be modified, the cleaning treatment can be performed in the same apparatus. Further, in this case, further, in view of the fact that these treatments are not performed simultaneously, as in the invention according to claim 9, the ion source for ionizing the inert gas is a gas containing the hydrophilic group. Alternatively, an ion source for ionizing water vapor is diverted, and the ion irradiation means for irradiating the surface of the material to be modified with the inert ions is an ion irradiation means for irradiating the surface of the material to be modified with the ions of the hydrophilic group. It is diverted.
If such a configuration is adopted, it is possible to realize the surface reforming apparatus as an extremely simple apparatus, while it is an apparatus that also performs such cleaning with inert ions. Argon (Ar) gas or the like is used as the inert gas.

Further, the cleaning means may further include: a cleaning means for cleaning the surface of the material to be modified by sputter etching targeting the material to be modified. Can also be configured as. In this case, although it is necessary to supply direct current or high frequency power from the outside to the target material to be modified, also in the same apparatus, as a pretreatment of the steam ion irradiation to the surface of the material to be modified, The cleaning process can be performed.

On the other hand, the water molecules attached to the surface of the material to be modified by the irradiation of the steam ions act to reduce the adhesive force of the thin film material bonded by the hydrogen bond to the material to be modified.

Therefore, according to the invention as set forth in claim 11, in these configurations as the surface reforming apparatus, ( g ) water molecule removing means for removing water molecules from the surface of the ion-irradiated modified material. . If the configuration further includes, the adhesion of the thin film material bonded by the hydrogen bond to the material to be modified can be further strengthened.

The water molecule removing means is, for example, as in the invention according to claim 12, heating means for heating the surface of the material to be modified. Alternatively, according to the invention of claim 13, the surface of the material to be modified is irradiated with a plasma beam, a microwave, or an ultrasonic wave. Alternatively, claim 14
As in the invention described above, • supplying high-frequency power or DC power to the material to be modified. Can be configured as. With any of these configurations, it becomes possible to suitably evaporate or decompose water molecules and leave only the hydroxyl groups on the surface of the material to be modified that has been subjected to the ion irradiation.

[0036]

On the other hand, the surface of the material to be modified, which has a hydrophobic surface and is made of a chemically stable organic substance , is modified to be hydrophilic.
As a surface reforming apparatus for quality , according to the invention of claim 15 , (A) a vacuum container in which the material to be modified is mounted , and (B) a hydrophilic group in the vacuum container in which the material to be modified is mounted. Including
Hydrophilic group introducing means for introducing gas or water vapor, (C) the hydrophilic group is disposed in a vacuum container and contains the introduced hydrophilic group.
An ion source for ionizing the gas or water vapor, (D) the ionized hydrophilic group ions of the material to be modified
According to the method, each of which comprises an ion irradiation means for irradiating the surface, and ( E ) a thin film forming means for forming a desired thin film on the surface of the organic material irradiated with the ions, the above-mentioned gas or water vapor containing a hydrophilic group. and had the based on the irradiation of the ion, organic material material (reformed material)
Surface is reformed to a state in which hydroxyl groups are substituted or adsorbed
The Rukoto. For this reason , the thin film deposited and formed on the surface of the organic material after that becomes extremely firmly attached based on the hydrogen bond between the atom and the atom (hydroxyl group) on the surface of the organic material.

[0038]

[0039]

It should be noted, as by the invention of claim 1 6, wherein, in these surface modification apparatus, a thin film formation means <br/> of that, deposition, or plating, or the deposition method of a thin film by coating Can be adopted.

Further, particularly as by the invention of claim 17 wherein, the ion irradiation unit (D) above, together with partially masked surface of the (D -1) the organic substance material, (D -2) Areas other than the masked area are selectively irradiated with ions of the gas or water vapor containing the hydrophilic group , and the thin film forming step of the above ( E ) is ( E- 1) vapor deposition or plating or coating. Means for forming a thin film on the entire surface of the organic material by ( E- 2) means for attaching an adhesive tape to the surface of the formed thin film, ( E- 3) means for peeling off the adhered adhesive tape,
If the organic substance material is made of a hydrophobic material such as fluororesin, the decoration and wiring laying with a thin film on the surface can be surely and easily realized. Like

That is, when the surface of the fluororesin is selectively ion-irradiated through the mask (shielding plate), only the ion-irradiated portion is modified to be hydrophilic, but the other masked portions are masked. The part remains hydrophobic. For this reason, when the adhesive tape is attached to the thin film deposited and formed on the surface of the fluororesin and peeled off, only the thin film deposited on the hydrophilically modified portion is the resin. The remaining portion, which remains on the surface, is peeled off from the resin surface while being attached to the adhesive tape.

Further, the claims18As according to the described invention
And above (E) Thin film formationmeansAs for the other, .Partially masking the surface of the organic materialmeans
And vapor deposition or plating on the area other than the masked area
Or form a thin film by coatingmeansDo not have
Things. May be such a thin film formationmeansBy
However, select a thin film that adheres strongly to the surface of the organic material
Can be formed as desired.

[0044]

[0045]

[0046]

[0047]

[0048]

[0049]

[0050]

[0051]

[0052]

[0053]

BEST MODE FOR CARRYING OUT THE INVENTION First, the principle of the present invention will be described. A method of immersing the material to be modified in a solution, a method of physically and chemically modifying the surface layer of the material to be modified using the energy of plasma, or a method of modifying the material to be modified by laser irradiation. In a conventional surface modification method such as a method of selectively adsorbing a hydroxyl group on the surface to modify the surface, (i) management and treatment processes are extremely complicated. (Ii) Sufficient adhesion of the thin film cannot be obtained. (Iii) When the material to be modified has a fine or complex structure, there is a concern that breakage or uneven processing may occur. (Iv) Equipment is expensive. As mentioned above, problems such as the above remain.

Therefore, the inventors of the present invention introduced a gas containing a hydrophilic group, preferably steam, into a vacuum chamber to ionize it, and irradiate the surface of the material to be modified with the steam ions in a vacuum atmosphere. A method of modifying the surface of the material to be hydrophilic was examined.

According to such a method, only by directly irradiating the surface of the material to be modified with the above-mentioned water vapor ions, the physical energy of the surface atoms is used to replace the surface atoms with hydroxyl (OH) groups or to generate oxygen atoms on the surface. Adsorption of the same hydroxyl group will occur due to the bonding of hydrogen. That is, the surface of the material to be modified is modified to have hydroxyl groups substituted or adsorbed, without using the laser or special gas. Therefore, when a thin film material is subsequently deposited by plating, vapor deposition or the like, it is possible to obtain a very strong bond in which the atoms of the thin film material and the atoms of the material to be modified are bonded by hydrogen bonds. Also becomes.

Further, according to this method, since the surface of the material to be modified is modified by the ions whose degree of spread and convergence are easily controlled, the material to be modified has a complicated shape. Even if it is, the uniform surface modification according to the shape is realized.

Moreover, with such ion irradiation, there is no fear of damaging the surface of the material to be modified. An apparatus for realizing surface modification or thin film formation in such an aspect has simple management and treatment processes, and is inexpensive in terms of equipment as compared with the above-described apparatus using a laser or the like.

(First Embodiment) FIG. 1 shows a first surface modifying apparatus according to the present invention constructed on the basis of such a principle.
2 shows an embodiment of the present invention.

The apparatus of the first embodiment is configured as an apparatus for modifying the entire hydrophobic surface of a fluororesin container having an arbitrary shape to hydrophilic. In addition, in the same device,
An aluminum vapor deposition film as a light reflecting film is coated on the entire surface of the hydrophilically modified fluororesin container to provide a storage container for photochemically active and corrosive chemicals that need to be stored in a cool place at low cost. .

First, the configuration of the apparatus of this embodiment will be described with reference to FIG. In the apparatus according to the first embodiment, the vacuum container 1 is a container whose inside is set to a desired degree of vacuum by an exhaust device 2 including a vacuum pump, for example. An ion source 3 for generating and accelerating an ion beam is provided inside the vacuum container 1, and a fluororesin container substrate 4 as a material to be modified is provided at a position where the generated ion beam is irradiated. It is mounted and fixed by 5. The substrate fixing jig 5 is connected to a rotating mechanism 6 provided outside the vacuum container 1, and based on the drive of the rotating mechanism 6, in the mode shown by the arrow in the figure, the fluororesin container is used. It functions to rotate the substrate 4 at a constant speed.

On the other hand, in the apparatus of the same embodiment, an inert gas introducing port 7 for introducing an inert gas such as argon (Ar) gas into the vacuum container 1 and water vapor are provided outside the vacuum container 1. A steam generator 8 for generating the steam and a steam inlet 9 for introducing the generated steam into the vacuum container 1 are provided. Both the introduced inert gas and water vapor are ionized through the ion source 3 and the surface of the fluororesin container substrate 4 is irradiated with the respective ions.

An ion extraction grid 10 and a thermoelectron emission filament (neutralizer) 11 are provided near the ion outlet of the ion source 3 as part of the ion irradiation means for the fluororesin container substrate 4. . Although the power supply means for these elements is not shown in the drawings, particularly with the thermionic emission filament 11, the generated thermoelectrons neutralize the ions, and the fluororesin container substrate 4 is irradiated with the ions. Inconveniences such as being charged up can be preferably avoided.

Inside the vacuum container 1, in the vicinity of the fluororesin container substrate 4 irradiated with ions, a heating mechanism for evaporating and removing water molecules attached to the surface of the substrate 4 is removed. 12 is provided, and on the opposite side of the ion source 3, a vapor deposition device for vapor-depositing an aluminum thin film as a light reflecting film on the entire surface of the fluororesin container substrate 4 which has been modified and has water molecules removed. 13 are provided.

Next, a method of modifying the surface of the fluororesin container substrate 4 using the apparatus of the first embodiment and a method of depositing an aluminum thin film on the surface of the modified fluororesin container substrate 4 will be described. .

Surface modification and thin film formation using the apparatus of the first embodiment are carried out according to the procedures listed below. (1) First, the fluororesin container substrate 4 is attached to the substrate fixing jig 5 in the vacuum container 1, and the vacuum degree 5 × 10 ∧ (−6) Torr (where “∧” is a power Exhaust to the extent shown. As described above, the substrate fixing jig 5 is adapted to rotate the container substrate 4 at a constant speed based on the drive of the rotating mechanism 5 so that the entire surface of the container substrate 4 is uniformly irradiated with ions. become.

(2) Thus, while rotating the fluororesin container substrate 4, the inert ions can be removed from the ion source 2 for an extremely short time (about 30 seconds), and the material surface is not damaged. Cleaning is performed by selecting such irradiation conditions. Preferably, about 2 × 10 ∧ (−4) Torr of argon gas is introduced from the inert gas inlet 7, this is ionized in the ion source 2, and the fluororesin is applied at an accelerating voltage of 100 to 300 V for about 30 seconds. The surface of the container substrate 4 is irradiated.

(3) After that, water vapor is introduced into the ion source 2 for surface modification (hydrophilization) of the container substrate 4.
This steam is obtained by evaporating water in the steam generator 8 provided outside the vacuum container 1. Further, the introduction of the water vapor is performed under the condition that high-density ion irradiation is possible. The pressure at this time is 3 × 10∧
(-4) Torr level. This water vapor is ionized through the ion source 2 and irradiated onto the fluororesin container substrate 4. At this time, the above-mentioned filament for thermoelectron emission 11 is energized to generate thermoelectrons so that the container substrate 4 is not charged up by ion irradiation, thereby neutralizing the irradiated ions. The accelerating voltage of the ions at this time is a voltage that does not damage the surface of the fluororesin container substrate 4, which is the material to be modified, and is preferably 100 to 300V. The irradiation time is 10
It is about several seconds (about 15 seconds) to 10 minutes. In this way, by directly irradiating the surface of the fluororesin container substrate 4 with the hydroxyl (OH) group, the fluorine atom (F) on the surface is replaced with the hydroxyl group by its physical energy.

(4) Then, an aluminum thin film is deposited by a predetermined thickness on the surface of the hydrophilized fluororesin container substrate 4 by the vapor deposition device 13. At this time, before the vapor deposition of the thin film, the hydrophilized fluororesin container substrate 4 is heated to about 120 ° C. through the heating mechanism 12 to remove water molecules adsorbed on the hydroxyl groups, so that the film is deposited thereafter. It becomes possible to obtain extremely strong adhesion of the thin film.

FIG. 2 schematically shows the cross-sectional structure of the fluororesin container thus obtained, of which FIG.
2A shows the structure of the container substrate 4 before being mounted in the apparatus of the above embodiment, and FIG. 2B shows after the aluminum thin film is deposited and formed as a thin film 14 through the apparatus of the same embodiment. 2 shows the structure of the same container.

As shown in FIG. 2 (a), even the fluororesin container substrate 4 which is three-dimensionally processed into a complicated shape is modified to have a hydrophilic surface through the above-mentioned treatment, and the fluorine-containing resin substrate substrate 4 has the same hydrogen bond. By depositing the thin film 14 on the surface, it is possible to obtain a chemically stable light reflecting film having extremely high adhesion.

Moreover, according to the above-mentioned configuration of the apparatus of the first embodiment, since the treatment process and management for forming such a thin film are simple and the equipment is inexpensive, it is possible to use the above-mentioned photochemical method. It becomes possible to provide the storage container itself of the corrosive chemical, which is active and needs to be stored in a cold place, at low cost.

As described above, according to the surface modification apparatus of the first embodiment, (a) the surface of the material to be modified is substituted with hydroxyl groups or It will be modified to an adsorbed state (state with improved hydrophilicity). (B) Therefore, when a thin film material is subsequently deposited by plating, vapor deposition, or the like, an extremely strong adhesion is obtained in which the atoms of the thin film material and the atoms of the material to be modified are bonded by hydrogen bonds. You will also be able to. (C) Further, since the surface of the material to be modified is modified (becomes a state in which hydroxyl groups are substituted or adsorbed) by the ions whose degree of spread and convergence are easily controlled, the material to be modified Even if has a complicated shape, uniform surface modification according to those shapes will be realized. (D) Moreover, such ion irradiation does not cause any damage to the surface of the material to be modified. (E) The surface reforming apparatus is simple in management and treatment process, and is inexpensive in terms of equipment as compared with an apparatus using a laser or the like. And so on, many excellent effects can be achieved.

(Second Embodiment) FIG. 3 shows a second embodiment of the surface reforming apparatus according to the present invention, which is constructed based on the above principle.

In the apparatus of the second embodiment, even if the substrate made of the fluororesin has a three-dimensionally more complicated shape, for example, the entire surface of the substrate is ion-irradiated more uniformly and is irradiated. It is configured as a device that modifies hydrophilicity.

In FIG. 3, elements that are the same as or correspond to the elements shown in FIG. 1 above are denoted by the same reference numerals, and duplicate description of those elements is omitted.

In the apparatus of the second embodiment, basically, as shown in FIG. 3, the shape of the ion extraction grid 10 arranged in the ion source 3 covers the surface to be modified of the substrate 4. It was arranged as follows.

With such a configuration as the apparatus of the second embodiment, the substrate 4 fixed to the jig 5 is not rearranged, and the entire surface thereof is uniformly irradiated with ions to modify it. Will be able to.

Incidentally, the subsequent thin film forming process for the substrate 4 thus surface-modified is, for example, as also shown in FIG. 3, as follows: The substrate fixing jig 5 is moved as shown by an arrow F1 by an appropriate moving mechanism (not shown). The water molecules attached to the surface of the substrate 4 are moved and removed by the heating mechanism 12. The thin film 14 of aluminum or the like is deposited and formed on the surface of the substrate 4 from which the water molecules have been removed by the vapor deposition device 13.
At this time, as shown by arrow F2, the jig 5 to which the substrate 4 is fixed may be moved in small steps through the moving mechanism. Will be executed in such a mode.

As described above, also in the apparatus of the second embodiment, the above (a) to (e) in the apparatus of the first embodiment are used.
Similarly to the above, the surface of the substrate 4 made of, for example, a fluororesin can be uniformly modified to be hydrophilic through an extremely simple process and management, and a strong thin film can be formed on the surface of the substrate 4 based on the modification. You will be able to do it.

Moreover, according to the apparatus of the second embodiment, (f) no matter how complicated the substrate 4 is in three dimensions, it is possible to cope with this extremely easily. . Such effects can also be played together.

In the configuration of the apparatus of the second embodiment shown in FIG. 3, the thermoelectron emitting filaments 11 are arranged in a plane regardless of the shape of the substrate 4. Similarly to the ion extraction grid 10, the electron emission filament 11 may be arranged so as to cover the surface to be modified of the substrate 4.

Further, in the configuration illustrated in FIG. 3, the substrate fixing jig 5 is moved as shown by the arrow F1 to form the thin film on the surface of the substrate 4, but this mode is also optional. In addition, for example, the vapor deposition device 13 is disposed at a position facing the ion source 3 with the jig 5 interposed therebetween, and after the reforming process, the jig 5 is rotated by 180 ° to perform the thin film formation process. It is also possible to adopt a configuration for performing.

(Third Embodiment) FIG. 4 shows a third embodiment of the surface modifying apparatus according to the present invention, which is constructed based on the above principle.

The apparatus of the third embodiment is configured as an apparatus suitable for selectively forming, for example, a conductive thin film for electric wiring on the surface of a substrate made of fluororesin such as Teflon. There is.

As described above, when a fluororesin having extremely high corrosion resistance is used as such a wiring board and at the same time as a protective layer, various semiconductor sensors and IC circuits can be mounted extremely compactly, and a strong acid atmosphere and various These devices can be stably operated even in a corrosive gas atmosphere. Further, such a fluororesin is excellent as a substrate material for a high frequency circuit because of its dielectric constant and other characteristics.

In FIG. 4 as well, elements that are the same as or correspond to the elements shown in FIG. 1 or FIG. 3 above are given the same reference numerals, and a duplicate description of those elements is omitted. Omit.

In the device of the third embodiment, as a part of the ion irradiation means, the surface of the fluororesin substrate 4 which is the material to be modified is partially masked, and the region other than the masked region is covered. And a metal mask 15 for selectively irradiating the ions emitted from the ion source 3.

The metal mask 15 is electrically connected to the vacuum container 1 because the surface of the substrate 4 cannot be modified to be hydrophilic because the substitution / adsorption of hydroxyl groups is hindered by the charge up during ion irradiation. Holds at ground potential. Accordingly, in the device of the third embodiment, the thermionic emission filament (neutralizer) 11
The arrangement of is omitted.

The procedure of the surface hydrophilization process for forming the wiring material and the patterning process of the wiring, which are performed by using the apparatus of the third embodiment, will be listed below. (1) With the metal mask 15 covering the vicinity of the surface of the fluororesin substrate 4, the same process as the process performed by the apparatus of the first embodiment described above is basically performed to select the surface of the substrate 4. To be clean and hydrophilic. At this time, it is said that the mask shape of the metal mask 15 is set so that only the portion corresponding to the desired wiring pattern is selectively cleaned and made hydrophilic, corresponding to the desired wiring pattern. There is no end. In FIG. 4, reference numeral 16 is given to the portion of the surface of the substrate 4 which is made hydrophilic corresponding to the desired wiring pattern.

(2) After the selective modification of the surface of the fluororesin substrate 4 is completed in this manner, the substrate fixing jig 5 is moved by an appropriate moving mechanism (not shown) as shown by arrow F, and the surface of the substrate 4 is removed. The water molecules adhering to the are removed by the heating mechanism 12. Then, a conductive thin film 14 such as aluminum is formed on the surface of the substrate 4 from which the water molecules have been removed by the vapor deposition device 13.

(3) Next, the film-formed fluororesin substrate 4 is taken out from the vacuum container 1, and the adhesive tape 17 is attached to the entire film-forming surface of the substrate 4 in the mode shown in FIG. 5 (a). wear.

(4) Then, the attached adhesive tape 17 is peeled off. As a result, as shown in FIG. 5B, the selectively hydrophilized portion of the surface of the fluororesin substrate 4, that is, the thin film 14 corresponding to the selectively modified surface 16.
Only this remains on the same substrate 4, and the laying of the wiring pattern corresponding to the selective reforming surface 16 is realized. That is, when the fluorine resin substrate 4 is selectively ion-irradiated through the mask 15, only the ion-irradiated portion is modified to be hydrophilic, while the other masked portion is kept hydrophobic. To be done. Therefore, when the adhesive tape 17 is attached to the thin film 14 formed on the surface of the substrate 4 and is peeled off, the thin film formed on the hydrophilically modified portion. Only the part remains on the surface of the substrate 4, and the other part is peeled from the surface of the substrate 4 while being attached to the adhesive tape.

FIG. 6 shows the results of evaluating the irradiation dose of water vapor (H2 O) ions required for the above surface modification. According to this FIG. 6, 6 × 10∧ (15) io
It can be seen that by irradiating about ns / cm 2 (2) (accelerating voltage of 300 V and ion irradiation amount of about 15 seconds), the hydrophilic property can be sufficiently modified.

Incidentally, in FIG. 6, in the region where the contact angle of water is not 0 degree, the adhesion is weak even if the thin film is deposited, and the tensile strength is about 4 MPa (megapascal). At this time, the thin film was easily peeled off by the adhesive tape.

On the other hand, in the region where the contact angle of water is 0 degree in FIG. 6, the adhesive force of the deposited thin film is also improved, and the tensile strength thereof reaches 8.2 MPa. At this time, the thin film was not peeled off by the adhesive tape.

As described above, according to the apparatus and the patterning method of the third embodiment, (g) an electric circuit or a semiconductor sensor, etc., which uses a fluorocarbon resin having an extremely high corrosion resistance as a wiring board and at the same time as a protective layer, is provided. It can be produced easily and efficiently. Such an effect will be further exerted.

Although the apparatus of the third embodiment uses the metal mask 15 which is electrically connected to the vacuum container 1 and held at the ground potential, the apparatus of the first or second embodiment described above is used. Irradiated ions can be neutralized by using a thermionic emission filament 11 such as a device. In this case, even if the mask is made of resin instead of a conductive mask such as metal, it is possible to prevent charge up of the substrate 14 and selectively modify the surface thereof.

The device of the third embodiment and the patterning process described above are also effective not only for the wiring pattern described above but also for decorating a fluororesin substrate or the like with a thin film.

Further, in the third embodiment described above, in order to selectively form a thin film on the surface of an organic material such as a fluororesin, a mask treatment is applied at the stage of surface modification. In addition, for example, the surface modification may be performed on the entire surface of the material, and a mask treatment according to the above may be performed at the stage of film formation such as the vapor deposition. By such a thin film forming method, it is possible to selectively form a thin film firmly attached to the surface of the organic material.

(Fourth Embodiment) FIG. 7 shows a fourth embodiment of the present invention.
As an embodiment of the present invention, an example of a fluororesin cable formed into a thin film through the apparatus illustrated in FIG. 1 will be shown as an example.

As described above, the fluororesin is particularly excellent as a high-frequency material because of its dielectric constant and other properties. Conventionally, a fluororesin cable using the fluororesin as a coaxial cable separator for a high-frequency cable has been used. Is often used.

By the way, in such a high-frequency cable, it is generally necessary to reduce high-frequency propagation loss, and for that purpose, it is advantageous to use a large-diameter cable as the fluororesin cable. For example, the number G
When considering a cable that transmits a high frequency of about (giga) to several tens GHz, it is possible to suppress the loss to about 0.1 dB for a line length of 150 mm by using a cable having a diameter of about 3 mm. .

On the other hand, when heat inflow becomes a problem due to such a cable connection, the outer circumference of the fluororesin as the separator and the conductor in the center serve as heat propagation paths, so that it is necessary to reduce the cross-sectional area. Occurs.

Conventionally, however, such a fluororesin cable has a structure in which an appropriate metal wire material as a central conductor is covered with a cylindrical fluororesin material and is inserted into a metal pipe as an outer conductor. In this case, the metal pipe as the outer conductor has a thickness of several tens of μm to several tens.
Since it is as thick as 0 μm, the amount of inflow heat is naturally large. By the way, in the case of a cable in which the diameter of the cylindrical fluororesin material is about 3 mm, the inflowing heat amount reaches 2 W.

Therefore, in the fluororesin cable according to the fourth embodiment, the surface (outer circumference) of the cylindrical fluororesin material is modified by using the apparatus illustrated in FIG. 1, for example. By depositing a metal thin film made of copper or the like on the surface (outer periphery) of the fluororesin material by, for example, about 6 μm, the cross-sectional area of the cable is reduced, and the amount of heat flowing into the cable is greatly reduced.

The structure of the fluororesin cable as the fourth embodiment will be described in more detail below with reference to FIG. As shown in FIG. 7, the fluororesin cable includes a fluororesin 18 such as Teflon having a cylindrical shape as the separator, and a central conductor 1 arranged inside the cylinder.
9, an outer conductor 20 arranged on the outer peripheral portion of the cylinder, and a protective member 21 made of a resin material such as polyimide for protecting the outer conductor 20.

The outer diameter of the fluororesin 18 is 2.
It is 98 mm and the inner diameter is 0.912 mm. In order to reduce the above-mentioned high frequency propagation loss, the fluororesin 1
It is necessary to increase the skin area of No. 8, and the outer diameter and the inner diameter of this level are preferable. In addition, depending on the frequency range and device used, several mm to several tens mm
It is also possible to select the outer diameter of.

In the same fluororesin cable, as the central conductor 19, a steel wire covered with copper plated with silver is used. Such a wire rod has been conventionally often used as a center conductor material of a fluororesin cable.

On the other hand, the outer conductor 20 is copper vapor-deposited on the fluororesin 18 whose surface (outer periphery) is hydrophilically modified by the apparatus illustrated in FIG. 1, for example, also by the apparatus illustrated in FIG. It consists of a thin film and its thickness is about 6
μm. Incidentally, if it is assumed that a high frequency signal of 1.5 GHz is transmitted by the fluororesin cable having the outer diameter of about 3 mm, when the outer conductor 20 is made of copper, the film thickness is at least about 2 μm. Film thickness is required. In normal use, a film thickness of about 6 μm, which is three times that of the film thickness, is required to prevent high frequency leakage. If the outer conductor 20 has a film thickness of about 6 μm, the inflow heat quantity can be significantly reduced as compared with the case where a conventional metal pipe is used. The minimum film thickness of the outer conductor 20 varies depending on the frequency range used.

The protective material 21 is the same as the outer conductor 20.
After the copper thin film is formed, it is immersed in a resin material solution such as the polyimide and heat-treated to form a film, and the film thickness is several tens of μm. By providing such a protective material 21, the corrosion resistance and environment resistance of the fluororesin cable can be significantly improved.

FIG. 8 mainly shows the relationship between the propagation loss and the inflowing heat amount in the conventional fluororesin cable and the fluororesin cable according to the fourth embodiment. In this FIG. 8, FIGS. 8 (a) to 8 (c) show the relationship between the propagation loss and the inflowing heat amount of the various fluororesin cables together with their dimensions and conductor materials, and FIG. 8 (d) shows The relationship between the propagation loss and the inflow heat amount of the fluororesin cable according to the fourth embodiment as well as the dimensions and the conductor material thereof are shown.

As is apparent from FIG. 8, the fluororesin cable according to the same embodiment has a larger amount of inflow heat than a conventional cable (for example, FIG. 8A) having a similar propagation loss. , "1.98W → 0.066
It will be possible to significantly reduce it to "W". In addition,
In a conventional cable, the amount of heat flowing in is "0.066".
There are some that are smaller than "W" (for example, FIG. 8C), but in that case, the high frequency propagation loss is extremely large.

As described above, according to the fourth embodiment, (h) as a high-frequency fluororesin cable, an unprecedented high-performance cable having a small amount of inflowing heat and a small propagation loss is obtained. To be Such an extremely significant effect will be further exerted.

In the same embodiment, the above-mentioned about 3 m
The film thickness of the outer conductor 20 was set to about 6 μm, assuming that a high-frequency signal of 1.5 GHz, for example, is transmitted by a fluororesin cable having an outer diameter of about 0.
When used in a lower frequency range such as 5 GHz,
The film thickness of the outer conductor 20 may be about 50 μm, for example.

In such a case, the same fluororesin cable may also be used: -The copper vapor deposition film formed by hydrogen bonding on the surface of the cylindrical fluororesin 18 is further provided with a copper plating film or a copper coating film. It is further applied. Such a structure is effective. With such a structure, it is easy to increase the film thickness of the copper film as the outer conductor 20 to about 50 μm.

Also, as the thin film formed product, in general, a vapor deposition film is formed on the surface of any vapor deposition film formed by hydrogen bonding on a part or all of the surface of the organic material. A plating film or coating film made of the same material is further applied. With such a structure, it becomes easy to increase the film thickness of the film to be deposited.

In addition, in the fourth embodiment, the protection material 21 is provided to improve the corrosion resistance and environment resistance of the cable. In general, if it is a thin film formation that causes a problem when the formation part is exposed, then: -any vapor deposition film or plating film or coating film formed by hydrogen bonding on part or all of the surface of the organic substance material. Further, a film made of an organic material as a protective film is laminated on the surface of the. With such a structure, it is possible to improve the corrosion resistance and environment resistance of the thin film-formed product.

In this case, further, as the thin film-forming material, any vapor deposition film or plating film or coating film formed by hydrogen bonding on a part or all of the surface of the organic substance material, and the protection The organic substance material film laminated on the surface as a film is formed in multiple layers with the films as a pair. According to such a structure, for example, in a circuit board or the like, the control circuit layer and the wiring layer are provided at the same time,
Alternatively, even in the above high-frequency cable or the like, a large number of wiring layers are provided at the same time, so that a more complicated structure can be easily realized with high accuracy.

By the way, in each of the above embodiments, the case where the aluminum thin film or the copper thin film is vapor-deposited on the container or the substrate or the cable material made of the fluororesin has been described. But other containers, substrates, cable materials,
It is possible to form a hydroxyl group on the surface of each of these materials, and the kind (material) of the thin film to be deposited on these materials can be appropriately selected according to the purpose.

That is, the thin film forming method utilizing hydrogen bonding of the present invention is not limited to the aluminum or copper thin film coating on the container or the substrate or the cable material made of the fluororesin described heretofore, but it is extremely difficult to form a film conventionally. It is also effective for decoration of materials with complicated shapes, improvement of surface heat transfer characteristics and light reflection characteristics, and thin film formation on various materials for the purpose of imparting surface conductivity. is there.

The method of depositing a thin film is not limited to the vapor deposition method described above, and a sputtering method or the like can be appropriately adopted. The film formation method by a so-called dry process such as the vapor deposition method or the scutter method has an advantage that the film formation can be performed in the same vacuum atmosphere as the surface hydrophilization treatment.

Further, as a method of depositing the same thin film, a film forming method by a wet process such as a plating method can be adopted. However, in this case, after the hydrophilic treatment,
It is necessary to remove the substrate 4 from the vacuum container 1 once and transfer it to the plating tank.

Further, in each of the above-mentioned embodiments, the ion is neutralized by the thermionic emission filament 11 and the like, and the material to be modified is irradiated with the ion beam. If it is small enough,
Surface modification is possible without carrying out such neutralization.

Furthermore, in each of the above-mentioned embodiments, the ion irradiation for the surface modification is performed after the cleaning with the inert ion, but the surface of the material to be modified is sufficiently cleaned. The cleaning can be omitted if the environment is maintained. Irradiation with water vapor ions also realizes some cleaning.

In the case of performing cleaning with the above-mentioned inert ions, an ion source and ion irradiation means therefor may be separately provided in the same vacuum container.
Needless to say, however, when considering simplification and cost reduction of the device, it is desirable to use a configuration that also serves as those as in the above embodiment.

Further, such cleaning of the substrate to be modified can be carried out by sputter etching using the same material to be modified as a target. In this case, although it is necessary to externally supply DC or high-frequency power to the target material to be modified, in the same device,
As the pretreatment of the steam ion irradiation on the surface of the material to be modified, a treatment relating to the cleaning can be performed.

In each of the above-described embodiments, the thin film is deposited after the water molecules adhering to the modified surface of the material to be modified are removed by the heating mechanism 12. Alternatively, in an environment in which its presence can be ignored, the water molecule removal treatment can be omitted.

The means for removing the water molecule is not limited to the heating mechanism 12 described above. That is, other than the water molecule removing means, a means for irradiating the surface of the material to be modified with a plasma beam, a microwave, or an ultrasonic wave. -A device that supplies high-frequency power or DC power to the material to be modified. Etc. can be appropriately adopted. With any of these configurations, it becomes possible to suitably decompose water molecules and leave only the hydroxyl groups on the surface of the ion-irradiated modified material.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing the configuration of a first embodiment of a surface modification device according to the present invention.

FIG. 2 is a cross-sectional view showing a fluororesin container substrate and a mode of forming a thin film on the surface thereof.

FIG. 3 is a schematic diagram showing the configuration of a second embodiment of the surface modification device according to the present invention.

FIG. 4 is a schematic diagram showing the configuration of a third embodiment of the surface modification device according to the present invention.

FIG. 5 is a sectional view showing a process of forming a thin film wiring substrate according to a third embodiment.

FIG. 6 is a graph showing surface modification characteristics according to the amount of irradiated ions.

FIG. 7 is a sectional perspective view showing another example of the thin film formed article according to the present invention.

FIG. 8 is a schematic diagram mainly showing propagation loss-inflow heat quantity characteristics of various high frequency cables.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Exhaust device, 3 ... Ion source, 4 ... Fluororesin container substrate (fluorine resin substrate), 5 ... Substrate fixing jig, 6 ... Rotation mechanism, 7 ... Inert gas introduction port, 8 ... Steam Generator, 9 ... Steam inlet port, 10 ... Ion extraction grid, 11 ... Thermoelectron emitting filament (neutralizer), 12 ... Heating mechanism, 13 ... Evaporator, 14 ... Thin film (evaporated film), 15 ... Metal mask, 16 ... Selective modification surface, 1
7 ... Adhesive tape, 18 ... Cylindrical fluororesin, 19 ... Central conductor, 20 ... Outer conductor, 21 ... Outer conductor protection material.

Continuation of front page (56) Reference JP-A-6-302486 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) C08J 7/00 C08J ^7/ 04-7/06

Claims (18)

(57) [Claims] 1. A surface modification device for modifying a surface of a material to be modified, which has a hydrophobic surface and is made of a chemically stable organic substance, to be hydrophilic, wherein the material to be modified is mounted. And a hydrophilic group introducing means for introducing a gas or steam containing a hydrophilic group into the vacuum container in which the material to be modified is mounted, and the introduced hydrophilic group is disposed in the vacuum container. An ion source for ionizing a gas or water vapor containing hydrogen, and an ion irradiation unit for irradiating the surface of the material to be modified with the ions of the ionized hydrophilic group , wherein the ion irradiation unit is the material to be modified. Illuminated on the surface of
With a filament for thermionic emission that neutralizes the generated ions
The surface modification device is characterized by being configured as follows. 2. It has a hydrophobic surface and is chemically stable.
Table for modifying the surface of the material to be modified consisting of organic substances to make it hydrophilic
A surface reforming apparatus, comprising a vacuum container in which the material to be modified is mounted, and the material to be modified.
Gas containing a hydrophilic group in the vacuum container equipped with
A hydrophilic group introducing means for introducing water vapor and a vacuum chamber
The gas or water vapor containing the introduced hydrophilic group is installed.
An ion source that ionizes gas and this ionized hydrophilicity
Ion irradiation for irradiating the surface of the material to be modified with basic ions
And an ion irradiation means for changing the three-dimensional shape of the material to be modified.
A surface reforming device comprising an ion extraction grid arranged along the surface. 3. It has a hydrophobic surface and is chemically stable.
Table for modifying the surface of the material to be modified consisting of organic substances to make it hydrophilic
A surface reforming apparatus, comprising a vacuum container in which the material to be modified is mounted, and the material to be modified.
Gas containing a hydrophilic group in the vacuum container equipped with
A hydrophilic group introducing means for introducing water vapor and a vacuum chamber
The gas or water vapor containing the introduced hydrophilic group is installed.
An ion source that ionizes gas and this ionized hydrophilicity
Ion irradiation for irradiating the surface of the material to be modified with basic ions
Means for irradiating the surface of the material to be modified with the ion irradiation means.
Mask the area and apply the hydrophilic property to the area other than the masked area.
A surface reforming device comprising mask means for selectively irradiating basic ions . 4. The mask means is held at ground potential.
The surface modification device according to claim 3, which is a conductive mask . 5. It has a hydrophobic surface and is chemically stable.
Table for modifying the surface of the material to be modified consisting of organic substances to make it hydrophilic
A surface reforming apparatus, comprising a vacuum container in which the material to be modified is mounted, and the material to be modified.
Gas containing a hydrophilic group in the vacuum container equipped with
A hydrophilic group introducing means for introducing water vapor and a vacuum chamber
The gas or water vapor containing the introduced hydrophilic group is installed.
An ion source that ionizes gas and this ionized hydrophilicity
Ion irradiation for irradiating the surface of the material to be modified with basic ions
Injection means and the material to be modified installed in the vacuum container.
And a motion imparting means for imparting a desired motion.
And surface modification equipment. 6. The surface reforming apparatus according to claim 1, wherein the surface of the material to be modified mounted in the vacuum container is irradiated with a high energy beam to clean it. A surface reforming device, characterized by comprising: 7. The surface according to claim 6, wherein the cleaning means cleans the surface of the material to be modified by ion etching in which an inert gas, a gas containing the hydrophilic group or water vapor is ionized. Reformer. 8. The cleaning means and an inert gas introducing means for introducing an inert gas into a vacuum vessel in which the material to be modified is mounted, and the cleaning means are disposed in the vacuum vessel and introduced therein. The surface reforming apparatus according to claim 7, comprising an ion source for ionizing an inert gas, and ion irradiation means for irradiating the surface of the material to be modified with the ionized inert ions. 9. The ion source for ionizing the inert gas is an ion source for ionizing the gas containing the hydrophilic group or water vapor, and the ion irradiation means for irradiating the surface of the material to be modified with the inert ions. 9. The surface modification apparatus according to claim 8, wherein an ion irradiation unit that irradiates the surface of the material to be modified with the ions of the hydrophilic group is used. 10. The surface reforming apparatus according to claim 6, wherein the cleaning means cleans the surface of the material to be modified by sputter etching targeting the material to be modified. 11. The surface reforming apparatus according to claim 1, further comprising water molecule removing means for removing water molecules from the surface of the material to be ion-irradiated to be modified. Surface modification device. 12. The surface reforming apparatus according to claim 11, wherein the water molecule removing means is a heating means for heating the surface of the material to be modified. 13. The surface modification apparatus according to claim 11, wherein the water molecule removing means irradiates a surface of the material to be modified with a plasma beam, a microwave, or an ultrasonic wave. 14. The surface reforming apparatus according to claim 11, wherein the water molecule removing means supplies high frequency power or direct current power to the material to be modified. 15. A hydrophobic surface and chemically stable
The surface of the material to be modified consisting of an organic substance is modified to be hydrophilic
A surface reforming apparatus, comprising a vacuum container in which the material to be modified is mounted, and the material to be modified.
Gas containing a hydrophilic group in the vacuum container equipped with
A hydrophilic group introducing means for introducing water vapor and a vacuum chamber
The gas or water vapor containing the introduced hydrophilic group is installed.
An ion source that ionizes gas and this ionized hydrophilicity
Ion irradiation for irradiating the surface of the material to be modified with basic ions
Irradiation means and a table of the modified material irradiated with the ions.
A surface reforming device , comprising: a thin film forming means for forming a desired thin film on the surface. 16. The surface modification device according to claim 15,
The thin film forming means is vapor deposition, plating or coating.
To form a desired thin film on the surface of the organic substance material by
Surface modification apparatus which is a shall. 17. The surface modifying apparatus according to claim 15,
The ion irradiation means partially covers the surface of the organic material.
Area other than the masked area
Select the gas or water vapor ion containing the hydrophilic group
The thin film forming means is vapor deposition, plating or coating.
To form a thin film on the entire surface of the organic material by
Means and affixing an adhesive tape on the surface of the formed thin film
And means for peeling off the adhered adhesive tape
Surface modification apparatus characterized by comprising a. 18. A thin film on the surface of an organic substance according to claim 15.
In the forming method, the thin film forming means partially covers the surface of the organic material.
Masking means and the area other than the masked area.
Form a thin film by coating, plating or coating
Surface modification apparatus characterized by comprising a means.