JP3486795B2 - Magnetic recording medium and method of manufacturing the same - Google Patents
Magnetic recording medium and method of manufacturing the sameInfo
- Publication number
- JP3486795B2 JP3486795B2 JP02646096A JP2646096A JP3486795B2 JP 3486795 B2 JP3486795 B2 JP 3486795B2 JP 02646096 A JP02646096 A JP 02646096A JP 2646096 A JP2646096 A JP 2646096A JP 3486795 B2 JP3486795 B2 JP 3486795B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- film
- magnetic recording
- recording medium
- continuous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011737 fluorine Substances 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 16
- 239000010410 layer Substances 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000000314 lubricant Substances 0.000 claims description 6
- 230000001050 lubricating effect Effects 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 75
- 230000001681 protective effect Effects 0.000 description 20
- 239000010687 lubricating oil Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910019222 CoCrPt Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は磁気記録媒体および
その製造方法に係り、特に、連続磁性膜による薄膜媒体
を用いる記憶装置に好適な磁気記録媒体およびその製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium and a method for manufacturing the same, and more particularly to a magnetic recording medium suitable for a storage device using a thin film medium having a continuous magnetic film and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】連続薄膜媒体を用いた記録媒体として、
磁気ディスクと、磁気テ−プ特にメタル蒸着テ−プがあ
る。磁気ディスクは、非磁性基板上に下地膜および連続
磁性膜をスパッタリング成膜法などにより形成した後、
アモルファスカーボン、ダイアモンドライクカーボン等
の固体潤滑材、あるいは、ＳｉＯ2、ＺｒＯ2等のセラミ
クス材等が、ドライプロセスにより、数十ｎｍの膜厚で
薄膜形成され、保護膜として用いられている。2. Description of the Related Art As a recording medium using a continuous thin film medium,
There are magnetic disks and magnetic tapes, especially metal vapor deposition tapes. A magnetic disk is formed by forming a base film and a continuous magnetic film on a non-magnetic substrate by a sputtering film forming method,
A solid lubricant such as amorphous carbon or diamond-like carbon, or a ceramics material such as SiO 2 or ZrO 2 is formed into a thin film with a thickness of several tens of nm by a dry process and used as a protective film.
【０００３】この保護膜は、ヘッドとディスクとが固体
接触した際の、耐摺動性あるいは耐食性を向上させるこ
とを目的としている。さらに、コンタクト、スタート、
ストップ等、磁気ヘッドと接触した際の接線力を低減す
るため、フッ素系液体潤滑剤を数ｎｍの膜厚で、ディッ
プ法またはスピンコート法などで塗布して用いられてい
る。また、磁気テ−プは、可とう性有機材料を用いた基
板上に、蒸着法により連続磁性膜を形成した後、磁気ヘ
ッドと常時摺動することによる連続磁性膜の摩耗を防ぐ
ため、フッ素系潤滑剤をディップ法により塗布して用い
られている。This protective film is intended to improve the sliding resistance or the corrosion resistance when the head and the disk are in solid contact with each other. In addition, contact, start,
In order to reduce the tangential force at the time of contact with the magnetic head such as a stop, a fluorinated liquid lubricant having a film thickness of several nm is applied by a dip method or a spin coat method. In addition, the magnetic tape is made of fluorine in order to prevent abrasion of the continuous magnetic film due to constant sliding with the magnetic head after the continuous magnetic film is formed on the substrate made of a flexible organic material by the vapor deposition method. It is used by applying a system lubricant by the dip method.
【０００４】[0004]
【発明が解決しようとする課題】磁気ディスクにおい
て、記録密度を向上させるためには、連続磁性膜の高性
能化、あるいは磁気ヘッドと連続磁性膜との間の隙間を
小さくすることが必要である。そのために通常行われる
手段は、磁気ヘッドの浮上量を低減することであるが、
磁気ヘッドと磁気ディスクとが常時摺動するコンタクト
磁気記録方式では、前記手段は講じられない。In order to improve the recording density of the magnetic disk, it is necessary to improve the performance of the continuous magnetic film or to reduce the gap between the magnetic head and the continuous magnetic film. . The usual means for this is to reduce the flying height of the magnetic head.
In the contact magnetic recording method in which the magnetic head and the magnetic disk are constantly sliding, the above means is not taken.
【０００５】この場合の記録隙間低減手法としては、保
護膜厚の薄膜化が挙げられるが、データを記録する連続
磁性膜を、耐食性や耐摺動性の面から保護する機能を維
持したまま、保護膜を薄膜化することは、ほぼ限界に近
づきつつあるというのが現状である。同様に、潤滑剤層
に関しても、塗布面の被覆率が問題となり、膜厚を極端
に薄くできない。In order to reduce the recording gap in this case, the protective film thickness can be reduced. However, while maintaining the function of protecting the continuous magnetic film for recording data from the viewpoint of corrosion resistance and sliding resistance, The current situation is that the thinning of the protective film is approaching its limit. Similarly, with respect to the lubricant layer, the coverage of the coated surface becomes a problem, and the film thickness cannot be extremely reduced.
【０００６】従って、本発明は、連続磁性膜に、保護膜
あるいは潤滑膜と同等以上の耐摩耗性や耐摺動性および
耐食性機能をもたせ、保護膜形成プロセスを省くととも
に、実質保護膜厚さを低減することを目指すものであ
る。Therefore, according to the present invention, the continuous magnetic film is provided with the wear resistance, the sliding resistance and the corrosion resistance function which are equal to or higher than those of the protective film or the lubricating film, the protective film forming process is omitted, and the substantial protective film thickness is reduced. The goal is to reduce
【０００７】同様のコンセプトを記載した例としては、
特開平１−１７８１２１号公報があるが、これは、連続
磁性膜の成膜時に耐久性のある添加物を混入させ、その
連続磁性膜をメッキ法で製造するものであり、このよう
なウエットプロセスで形成した薄膜は、コンタクト記録
方式に適用できるような平滑面を形成することが困難で
あるという問題があった。An example describing a similar concept is:
Japanese Patent Laid-Open No. 1-178121 discloses a method in which a durable additive is mixed at the time of forming a continuous magnetic film and the continuous magnetic film is manufactured by a plating method. The thin film formed in 1 has a problem that it is difficult to form a smooth surface applicable to the contact recording method.
【０００８】一方、磁気テ−プ特にメタル蒸着テ−プに
おいては、保護膜は形成されていないが、磁気ヘッドと
テ−プとの相対速度が、４ｍ／ｓ以上になると保護膜が
必要になってくる。本発明の対象である磁気ディスクの
相対速度は、１０ｍ／ｓ以上であり、磁気テ−プの摺動
条件とは違っているので、磁気テ−プの技術をそのまま
利用することができない。On the other hand, a protective film is not formed on a magnetic tape, particularly a metal vapor deposition tape, but a protective film is required when the relative speed between the magnetic head and the tape is 4 m / s or more. Is coming. Since the relative velocity of the magnetic disk which is the object of the present invention is 10 m / s or more, which is different from the sliding condition of the magnetic tape, the technology of the magnetic tape cannot be used as it is.
【０００９】本発明の目的は、保護膜を省いて狭隙間を
実現でき、かつ媒体表面の耐摩耗性や耐摺動性を確保し
た磁気記録媒体およびその製造方法を得ることにある。An object of the present invention is to provide a magnetic recording medium which can realize a narrow gap by omitting a protective film, and which secures wear resistance and sliding resistance of the medium surface, and a manufacturing method thereof.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明の磁気記録媒体は、非磁性基板上の連続磁性
膜に、イオン注入により形成した改質層が、磁気記録領
域であることを特徴とするものである。また、非磁性基
板上に連続磁性膜を含む膜構成を有する磁気記録媒体に
おいて、前記連続磁性膜の表層にイオン注入により改質
された磁気記録領域を有し、前記磁気記録領域の上に直
接に潤滑膜を設けていることを特徴とするものである。
また、前記イオンは、Ｆ、ＣＦ、ＨＦ等のうちいずれか
のフッ素もしくはフッ素系のイオンを使用したものであ
る。また、上記目的は、非磁性基板上に、下地膜、連続
磁性膜を順次形成する磁気記録媒体の製造方法におい
て、前記連続磁性膜に、Ｆ、ＣＦ、ＨＦ等のうちいずれ
かのフッ素もしくはフッ素系のイオンを注入し、表層に
磁気記録領域である改質層を形成することを特徴とする
磁気記録媒体の製造方法によって達成される。In order to achieve the above object, in the magnetic recording medium of the present invention, a modified layer formed by ion implantation in a continuous magnetic film on a non-magnetic substrate is a magnetic recording region. It is characterized by that. Further, in a magnetic recording medium having a film structure including a continuous magnetic film on a non-magnetic substrate, the surface layer of the continuous magnetic film has a magnetic recording region modified by ion implantation, and the magnetic recording region is directly formed on the magnetic recording region. It is characterized in that a lubricating film is provided on.
Further, the ions are fluorine or fluorine-based ions selected from F, CF, HF and the like. Further, the above-mentioned object is, in a method of manufacturing a magnetic recording medium in which an undercoat film and a continuous magnetic film are sequentially formed on a non-magnetic substrate, in the continuous magnetic film, fluorine or fluorine of any one of F, CF, HF and the like is used. This is achieved by a method of manufacturing a magnetic recording medium, characterized in that a modified layer, which is a magnetic recording region, is formed on the surface layer by implanting system ions.
【００１１】上記構成による作用について以下に述べ
る。本発明の目的は、先に述べたように、磁気記録媒
体、例えば磁気ディスクの連続磁性膜にイオンを注入
し、耐摩耗性、耐摺動性を確保するとともに、このイオ
ン注入により連続磁性膜の表面に形成した改質層を磁気
記録領域として使用することである。連続磁性膜にフッ
素系のイオンを注入する場合、イオンの注入深さは、連
続磁性膜の膜厚が２０〜５０ｎｍであることを考慮し
て、１０ｎｍ以下が望ましい。一方、バルク材の基板に
注入されたイオンの深さ方向の分布は、注入深さを中心
とするガウス分布で近似されることが知られている。こ
の際のイオンの注入深さの中心値である投影飛程Ｒｐ
と、その分布の標準偏差ΔＲｐの関係は、数１式で表さ
れる。（文献「イオンビーム応用技術」、シーエムシ
ー、１９８９年）The operation of the above configuration will be described below. As described above, the object of the present invention is to implant ions into a continuous magnetic film of a magnetic recording medium, such as a magnetic disk, to ensure wear resistance and sliding resistance, and to implant the continuous magnetic film by this ion implantation. That is, the modified layer formed on the surface of is used as a magnetic recording area. When fluorine-based ions are implanted into the continuous magnetic film, the ion implantation depth is preferably 10 nm or less, considering that the thickness of the continuous magnetic film is 20 to 50 nm. On the other hand, it is known that the distribution of ions implanted in the substrate of the bulk material in the depth direction is approximated by a Gaussian distribution centered on the implantation depth. Projection range Rp, which is the central value of ion implantation depth at this time
And the standard deviation ΔRp of the distribution are expressed by the equation (1). (Reference "Ion beam application technology", CMC, 1989)
【００１２】[0012]
【数１】 [Equation 1]
【００１３】[0013]
【００１４】一方、注入電圧の影響について考えると、
５００ｅＶ以下にすると、基板でのスパッタ効果が高ま
ってしまい、注入そのものはなされず、条件としては不
適切となる。また、１０ｋｅＶ以上であると、平均注入
深さは１０ｎｍを越え、連続磁性膜の結晶構造を大幅に
破壊してしまい、磁気特性の劣化を招いてしまう。以上
を考慮して、基板にダメージを与えず、注入深さ１０ｎ
ｍ以下を実現するためには、注入電圧を５００ｅＶ以上
１０ｋｅＶ以下とすることが必要となる。On the other hand, considering the influence of the injection voltage,
If it is 500 eV or less, the sputtering effect on the substrate is increased, the implantation itself is not performed, and the condition is not suitable. On the other hand, if it is 10 keV or more, the average implantation depth exceeds 10 nm, and the crystal structure of the continuous magnetic film is largely destroyed, resulting in deterioration of magnetic characteristics. Considering the above, the implantation depth is 10n without damaging the substrate.
To realize the following m, it is necessary to 500eV above 10keV or less Note input voltage.
【００１５】本発明によれば、例えば、磁気ディスクの
基板となる非磁性基板上に、下地膜、および情報を記録
する連続磁性膜を形成した後、この連続磁性膜に、注入
電圧５００ｅＶ以上１０ｋｅＶ以下の範囲で注入し、さ
らに、その表面に潤滑剤を塗布する。According to the present invention, for example, a non-magnetic substrate as a substrate of a magnetic disk, the base film, and after forming a continuous magnetic film for recording information, in the continuous magnetic layer, Note input voltage 500eV more It is injected in a range of 10 keV or less, and a lubricant is applied to the surface.
【００１６】これにより、連続磁性膜の最表面はアモル
ファス化し硬化するので、連続磁性膜の耐摺動性は向上
する。また、膜厚方向に深い場所では注入イオン濃度が
低くなり、結晶構造破壊が起こらないため、磁気特性に
も影響しないという作用効果がある。これに加えて、前
記組織変化に伴い、耐食性も向上する。したがって、記
録隙間を低減でき、耐摺動性に優れるという、例えばコ
ンタクト記録方式に要求される仕様を満たす磁気ディス
クを得ることができる。As a result, the outermost surface of the continuous magnetic film becomes amorphous and hardens, so that the sliding resistance of the continuous magnetic film is improved. Further, the concentration of implanted ions becomes low at a location deep in the film thickness direction, and crystal structure destruction does not occur, so that there is an effect that magnetic characteristics are not affected. In addition to this, the corrosion resistance also improves with the change in the structure. Therefore, it is possible to obtain a magnetic disk which can reduce the recording gap and is excellent in sliding resistance, for example, which meets the specifications required for the contact recording method.
【００１７】[0017]
【発明の実施の形態】以下、本発明の実施形態を、図面
を参照して説明する。本発明の第１の実施形態を、図１
を用いて説明する。図１は磁気ディスクの薄膜構成を示
す断面図である。この第１の実施形態の膜構成は、Ｎｉ
Ｐメッキを施したアルミ合金基板４上に、Ｃｒ下地膜
３、ＣｏＣｒＴａ連続磁性膜１を、スパッタ成膜により
形成した後、その連続磁性膜１に、プラズマ状態で陰イ
オンガスとなるＣＦ4ガスを導入してイオンを注入し、
その後ディップ法により、フッ素系の液体潤滑剤２を表
面に塗布したものである。また、イオン化してＣＦある
いはＨＦとなる、例えばＣＦ等のフロロカーボンが気化
しイオン化したガス、フッ酸が気化しイオン化したガス
なども注入イオンとして利用できる。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. A first embodiment of the present invention is shown in FIG.
Will be explained. FIG. 1 is a sectional view showing a thin film structure of a magnetic disk. The film structure of the first embodiment is Ni
A Cr underlayer 3 and a CoCrTa continuous magnetic film 1 are formed on a P-plated aluminum alloy substrate 4 by sputtering, and then CF 4 gas, which becomes an anion gas in a plasma state, is formed on the continuous magnetic film 1. To introduce ions,
After that, the fluorine-based liquid lubricant 2 is applied to the surface by the dipping method. Further, a gas that is ionized into CF or HF, for example, a gas in which fluorocarbon such as CF is vaporized and ionized, or a gas in which hydrofluoric acid is vaporized and ionized can be used as the implanted ions.
【００１８】この第１の実施形態を用いて摺動試験を行
った。比較例として、第１実施形態の膜構成の表面に、
さらにカ−ボン保護膜をスパッタ法により成膜し、ディ
ップ法でフッ素系の液体潤滑剤を塗布したディスクを用
いた。摺動条件を表１に示す。本実施形態においては、
イオン注入時間は２０秒としたので、注入量は、４×１
０13（個／ｃｍ2）となる。このイオン注入条件は、注
入領域における磁性媒体の結晶構造破壊が殆どないの
で、注入領域も記録層として使用できるものである。A sliding test was conducted using this first embodiment. As a comparative example, on the surface of the film structure of the first embodiment,
Further, a disk was used in which a carbon protective film was formed by a sputtering method and a fluorine-based liquid lubricant was applied by a dipping method. Table 1 shows the sliding conditions. In this embodiment,
The ion implantation time was 20 seconds, so the implantation amount was 4 × 1.
It becomes 0 13 (pieces / cm 2 ). Under the ion implantation conditions, since the crystal structure of the magnetic medium is hardly destroyed in the implantation region, the implantation region can also be used as the recording layer.
【００１９】[0019]
【表１】 [Table 1]
【００２０】実験後、第１実施形態、比較例ともに、摺
動痕は確認できなかった。これにより、本発明になる磁
気ディスクは、保護膜付きのディスクと同等の耐摺動性
を備えていることがわかった。また、同時に接線力もフ
ッ素イオンを注入することにより、潤滑性が向上するの
で、低減できる効果がある。これに加えて、第１の実施
形態のように保護膜をなくすことで、磁気ヘッドと連続
磁性膜の狭小化を図れる効果は大きい。After the experiment, no sliding marks could be confirmed in both the first embodiment and the comparative example. From this, it was found that the magnetic disk according to the present invention had the same sliding resistance as the disk with the protective film. In addition, by injecting fluorine ions at the same time, the tangential force is improved because the lubricity is improved, so that there is an effect that it can be reduced. In addition to this, by eliminating the protective film as in the first embodiment, there is a great effect that the magnetic head and the continuous magnetic film can be narrowed.
【００２１】次に、本発明の第２の実施形態を、第１の
実施形態と同様に、図１を用いて説明する。この第２実
施形態の膜構成は、ＮｉＰメッキを施したアルミ合金基
板４上に、Ｃｒ下地膜３、ＣｏＣｒＴａ連続磁性膜１を
スパッタ成膜により形成した後、その連続磁性膜１に、
プラズマ状態で陽イオンガスとなるＮ2ガスを導入して
イオンを注入し、その後ディップ法により、フッ素系の
液体潤滑剤２を表面に塗布したものである。Next, a second embodiment of the present invention will be described with reference to FIG. 1 similarly to the first embodiment. In the film configuration of the second embodiment, after the Cr underlayer 3 and the CoCrTa continuous magnetic film 1 are formed by sputtering on the aluminum alloy substrate 4 plated with NiP, the continuous magnetic film 1 is
N 2 gas, which becomes a cation gas in a plasma state, is introduced to inject ions, and then a fluorine-based liquid lubricant 2 is applied to the surface by a dip method.
【００２２】この第２の実施形態を用いて摺動試験を行
った。比較例として、第２実施形態の膜構成の表面に、
さらにカ−ボン保護膜をスパッタ法により成膜し、ディ
ップ法でフッ素系の液体潤滑剤を塗布したディスクを用
いた。摺動条件を表２に示す。A sliding test was conducted using this second embodiment. As a comparative example, on the surface of the film structure of the second embodiment,
Further, a disk was used in which a carbon protective film was formed by a sputtering method and a fluorine-based liquid lubricant was applied by a dipping method. Table 2 shows the sliding conditions.
【００２３】[0023]
【表２】 [Table 2]
【００２４】実験後は、第１の実施形態と同様な結果が
得られた。また、１ｇｆ以下の軽荷重領域でも、同様な
結果が得られることを確認した。さらに、ディスク基板
上に、下地膜、連続磁性膜、Ｃ等の保護膜を成膜し、イ
オンを連続磁性膜に注入した後、保護膜を除去しても、
本発明の上記実施形態と同様の効果を期待できることは
明らかである。After the experiment, the same result as that of the first embodiment was obtained. It was also confirmed that similar results were obtained even in a light load region of 1 gf or less. Further, even if a protective film such as a base film, a continuous magnetic film, or C is formed on the disk substrate, ions are injected into the continuous magnetic film, and then the protective film is removed,
It is obvious that the same effect as that of the above-described embodiment of the present invention can be expected.
【００２５】ここで、イオン注入した磁気記録媒体と、
イオン未注入の磁気記録媒体とで、記録密度の比較検討
を行った。本検討において、イオン注入した磁気記録媒
体の膜構成は、ＮｉＰメッキを施したアルミ合金基板上
に、Ｃｒ下地膜３、ＣｏＣｒＴａ連続磁性膜１をスパッ
タ成膜により形成した後、その連続磁性膜１にプラズマ
状態で陰イオンガスとなるＣＦ4ガスを導入してイオン
を注入し、その後、ディップ法によりフッ素系の液体潤
滑剤２を表面に塗布したものである。Here, an ion-implanted magnetic recording medium,
A comparison of recording densities was carried out between a magnetic recording medium not implanted with ions. In the present study, the film structure of the ion-implanted magnetic recording medium is as follows: a Cr underlayer 3 and a CoCrTa continuous magnetic film 1 are formed by sputtering on an NiP plated aluminum alloy substrate, and then the continuous magnetic film 1 is formed. CF 4 gas, which becomes an anion gas in a plasma state, is introduced to inject ions, and then a fluorine-based liquid lubricant 2 is applied to the surface by a dip method.
【００２６】イオン注入条件は、上記第１及び第２の実
施形態と同様とした。また、比較したイオン未注入の磁
気記録媒体は、同様の膜構成でイオン注入は行わず、カ
ーボン保護膜を３０ｎｍの膜厚となるようにスパッタ成
膜して、その表面にフッ素系の液体潤滑剤２を塗布した
ものである。Ion implantation conditions were the same as those in the first and second embodiments. In the magnetic recording mediums without ion implantation, the ion implantation was not performed with the same film structure, but a carbon protective film was sputter-deposited so as to have a film thickness of 30 nm, and a fluorine-based liquid lubrication was performed on the surface. Agent 2 is applied.
【００２７】図２は、ヘッド／媒体間のスペーシング
（曲線ａ）または保磁力（曲線ｂ）と記録密度との関係
を示している。なお、記録密度は最大出力の半値を得る
記録周波数をもって表しており、保磁力は厳密には本検
討の条件を満たすものではないが、保磁力の低下と記録
密度の低下との関係と、これらの概略の数値とを知るた
めに示している。FIG. 2 shows the relationship between the head / medium spacing (curve a) or coercive force (curve b) and recording density. The recording density is expressed by the recording frequency at which half the maximum output is obtained. Although the coercive force does not strictly satisfy the conditions of this study, the relationship between the decrease in coercive force and the decrease in recording density It is shown in order to know the approximate numerical value of.
【００２８】比較検討の結果、今回、対象にした上記の
磁気記録媒体の保磁力は、イオン注入したものが１４
４,０００Ａ／ｍであり、未注入のものが１６０,０００
Ａ／ｍであるのに対して、１０％の保磁力低下が起こっ
た。一方、イオン注入したものでは、磁気記録媒体／ヘ
ッド間のスペーシングが、ヘッドの浮上量１００ｎｍで
あるのに対して、イオンを注入しないものは、カーボン
保護膜３０ｎｍが浮上量１００ｎｍに加わるため、スペ
ーシングは１３０ｎｍになる。As a result of a comparative examination, the coercive force of the above-described magnetic recording medium targeted this time is 14 when the ion implantation is performed.
4,000 A / m, uninjected one is 160,000
Although it was A / m, the coercive force decreased by 10%. On the other hand, in the case of ion implantation, the spacing between the magnetic recording medium and the head is a flying height of 100 nm, whereas in the case of no ion implantation, the carbon protective film 30 nm is added to the flying height of 100 nm. The spacing is 130 nm.
【００２９】図２から、各スペーシングでの記録密度を
推定すれば、イオン注入したものは、８０ｋＦＣＩ（Ｆ
ｌａｘ Ｃｈａｎｇｅ Ｐｅｒ Ｉｎｃｈ）であるのに
対し、イオン注入しないものは５０ｋＦＣＩに低下す
る。このとき、イオン注入したものの保磁力低下による
記録密度の低下分を考慮しても、イオン注入して保護膜
を除いたものの方が、イオン未注入のものに比較して、
優位であることがわかる。If the recording density at each spacing is estimated from FIG. 2, the ion-implanted one is 80 kFCI (F
Lax Change Per Inch), whereas those without ion implantation are reduced to 50 kFCI. At this time, even considering the decrease in the recording density due to the decrease in coercive force of the ion-implanted material, the ion-implanted material without the protective film is better than the non-ion-implanted material,
It turns out that it has an advantage.
【００３０】これまで示した第１および第２の実施形態
とも、連続磁性膜はＣｏＣｒＴａを用いたが、他の元
素、例えばＣｏＣｒＰｔ、ＣｏＮｉＣｒなどで構成され
る連続磁性膜にも適用可能である。以上、本発明の実施
形態を、例をあげて説明したが、本発明は、軽荷重領域
を用いるコンタクト記録対応の磁気ディスクに限らず、
従来の浮上ヘッド対応の磁気ディスクに対しても活用で
きるものである。In both the first and second embodiments described above, CoCrTa is used as the continuous magnetic film, but the continuous magnetic film can be applied to other elements such as CoCrPt and CoNiCr. Although the embodiments of the present invention have been described above with reference to examples, the present invention is not limited to the contact recording compatible magnetic disk using the light load region,
It can also be used for a conventional magnetic disk compatible with a flying head.
【００３１】[0031]
【発明の効果】上述のとおり本発明によれば、非磁性基
板上の連続磁性膜に、イオン注入により耐摩耗性や耐摺
動性を向上させた磁気記録領域を形成したので、保護膜
の必要性がなくなり、ヘッドと連続磁性膜との間の距離
の狭小化が図れるので、高記録密度化に対応した磁気記
録媒体を得ることができる。As described above, according to the present invention, since the magnetic recording region having improved wear resistance and sliding resistance is formed by ion implantation in the continuous magnetic film on the non-magnetic substrate, the protective film Since the necessity is eliminated and the distance between the head and the continuous magnetic film can be narrowed, it is possible to obtain a magnetic recording medium compatible with high recording density.
【図１】本発明の第１および第２の実施形態である磁気
ディスクを説明するための断面図である。FIG. 1 is a sectional view for explaining a magnetic disk according to first and second embodiments of the present invention.
【図２】磁気ヘッドと磁気記録媒体との間のスペーシン
グ（曲線ａ）または保磁力（曲線ｂ）と記録密度との関
係を説明するための図である。FIG. 2 is a diagram for explaining the relationship between the recording density and the spacing (curve a) or coercive force (curve b) between the magnetic head and the magnetic recording medium.
１ 連続磁性膜 １ａ イオン注入による改質層 ２ 潤滑剤層 ３ 下地膜 ４ 非磁性基板 1 Continuous magnetic film 1a Modified layer formed by ion implantation 2 Lubricant layer 3 Underlayer 4 Non-magnetic substrate
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｇ１１Ｂ 5/85 Ｇ１１Ｂ 5/85 Ｚ Ｈ０１Ｆ 10/08 Ｈ０１Ｆ 10/08 41/16 41/16 (56)参考文献 特開 平７−6362（ＪＰ，Ａ) 特開 平３−105721（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G11B 5/84 G11B 5/66 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 7 Identification code FI G11B 5/85 G11B 5/85 Z H01F 10/08 H01F 10/08 41/16 41/16 (56) References -6362 (JP, A) JP-A-3-105721 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) G11B 5/84 G11B 5/66
Claims (10)
膜に、注入量が４×１０ 13 （個／ｃｍ 2 ）となるイオン
注入により形成した改質層が、磁気記録領域であること
を特徴とする磁気記録媒体。1. A modified layer formed by ion implantation into a continuous magnetic film previously formed on a non-magnetic substrate so that the implantation amount is 4 × 10 13 (pieces / cm 2 ) is a magnetic recording region. A magnetic recording medium characterized by:
膜を含む膜構成を有する磁気記録媒体において、前記連
続磁性膜の表層に、注入量が４×１０ 13 （個／ｃｍ 2 ）
となるイオン注入により改質された磁気記録領域を有
し、前記磁気記録領域の上に直接に潤滑膜を設けている
ことを特徴とする磁気記録媒体。2. In a magnetic recording medium having a film structure including a continuous magnetic film previously formed on a non-magnetic substrate, an injection amount of 4 × 10 13 (pieces / cm 2 ) is applied to the surface layer of the continuous magnetic film.
The magnetic recording medium characterized in that it has a modified magnetic recording area, is provided directly to the lubricant film on the magnetic recording region by ion implantation to be.
ちいずれかのフッ素もしくはフッ素系のイオンである請
求項１または２に記載の磁気記録媒体。Wherein said implanted ions, F, CF, magnetic recording medium according to claim 1 or 2 which is either a fluorine or a fluorine-based ion among H F.
またはモリブデン系の潤滑膜である請求項１または２に
記載の磁気記録媒体。4. The magnetic recording medium according to claim 1, wherein the lubricating film on the continuous magnetic film is a fluorine-based or molybdenum-based lubricating film.
に下地膜を有し、前記下地膜はクロームからなる請求項
１または２に記載の磁気記録媒体。5. The magnetic recording medium according to claim 1, further comprising a base film between the non-magnetic substrate and the continuous magnetic film, the base film made of chrome.
が、軽荷重領域を用いるコンタクト記録方式、または浮
上ヘッド方式のいずれかの方式に対応する磁気ディスク
である磁気ディスク装置。6. A magnetic disk device, wherein the magnetic recording medium according to claim 1 is a magnetic disk compatible with either a contact recording method using a light load area or a flying head method.
順次形成する磁気記録媒体の製造方法において、予め形
成された前記連続磁性膜に、Ｆ、ＣＦ、ＨＦのうちいず
れかのフッ素もしくはフッ素系のイオンを、注入量が４
×１０ 13 （個／ｃｍ 2 ）となるように注入し、表層に磁
気記録領域である改質層を形成することを特徴とする磁
気記録媒体の製造方法。7. A method for manufacturing a magnetic recording medium, which comprises sequentially forming an underlayer film and a continuous magnetic film on a non-magnetic substrate in advance.
The continuous magnetic film made, F, CF, and either a fluorine or ion of the fluorine of the H F, the amount of implanted 4
A method of manufacturing a magnetic recording medium, which comprises injecting so as to have a density of × 10 13 (pieces / cm 2 ), and forming a modified layer as a magnetic recording region on the surface layer.
フッ素系またはモリブデン系の潤滑膜を直接塗布する請
求項７に記載の磁気記録媒体の製造方法。8. On the modified layer which becomes the magnetic recording region,
The method of manufacturing a magnetic recording medium according to claim 7, wherein a fluorine-based or molybdenum-based lubricating film is directly applied.
深さは、前記連続磁性膜の膜厚が２０ないし５０ｎｍで
あるのに対し、１０ｎｍ以下である請求項７に記載の磁
気記録媒体の製造方法。9. The magnetic recording medium according to claim 7, wherein the ion implantation depth of the continuous magnetic film is 10 nm or less, while the film thickness of the continuous magnetic film is 20 to 50 nm. Production method.
形成した後、イオンガスを導入し、プラズマ状態で前記
イオンを注入する請求項７に記載の磁気記録媒体の製造
方法。10. The method for manufacturing a magnetic recording medium according to claim 7, wherein after the continuous magnetic film is formed by sputtering, an ion gas is introduced and the ions are injected in a plasma state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02646096A JP3486795B2 (en) | 1996-02-14 | 1996-02-14 | Magnetic recording medium and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02646096A JP3486795B2 (en) | 1996-02-14 | 1996-02-14 | Magnetic recording medium and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09219020A JPH09219020A (en) | 1997-08-19 |
| JP3486795B2 true JP3486795B2 (en) | 2004-01-13 |
Family
ID=12194131
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02646096A Expired - Fee Related JP3486795B2 (en) | 1996-02-14 | 1996-02-14 | Magnetic recording medium and method of manufacturing the same |
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| JP4072321B2 (en) | 2001-02-02 | 2008-04-09 | 株式会社日立グローバルストレージテクノロジーズ | Magnetic recording medium, method for manufacturing the same, and magnetic recording apparatus using the same |
| US8389048B2 (en) | 2006-02-10 | 2013-03-05 | Showa Denko K.K. | Magnetic recording medium, method for production thereof and magnetic recording and reproducing device |
| US8137517B1 (en) | 2009-02-10 | 2012-03-20 | Wd Media, Inc. | Dual position DC magnetron assembly |
| JP5232730B2 (en) * | 2009-07-03 | 2013-07-10 | 昭和電工株式会社 | Magnetic recording medium, method of manufacturing magnetic recording medium, and magnetic recording / reproducing apparatus |
| JP5422399B2 (en) * | 2010-01-05 | 2014-02-19 | 株式会社日立製作所 | Patterned media and manufacturing method thereof |
| US20130163119A1 (en) * | 2010-09-07 | 2013-06-27 | National University Of Singapore | Head-Media Interface in a Hard Disk Drive |
| US8674327B1 (en) | 2012-05-10 | 2014-03-18 | WD Media, LLC | Systems and methods for uniformly implanting materials on substrates using directed magnetic fields |
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1996
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