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JP3482856B2 - Liquid crystal display device and method of manufacturing the same - Google Patents

Liquid crystal display device and method of manufacturing the same

Info

Publication number
JP3482856B2
JP3482856B2 JP1229098A JP1229098A JP3482856B2 JP 3482856 B2 JP3482856 B2 JP 3482856B2 JP 1229098 A JP1229098 A JP 1229098A JP 1229098 A JP1229098 A JP 1229098A JP 3482856 B2 JP3482856 B2 JP 3482856B2
Authority
JP
Japan
Prior art keywords
substrate
liquid crystal
display device
crystal display
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1229098A
Other languages
Japanese (ja)
Other versions
JPH11212116A (en
Inventor
玄士朗 河内
佳朗 三上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1229098A priority Critical patent/JP3482856B2/en
Publication of JPH11212116A publication Critical patent/JPH11212116A/en
Application granted granted Critical
Publication of JP3482856B2 publication Critical patent/JP3482856B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、アクティブマトリ
クス型の液晶表示装置に係り、特に、プラスチック基板
やポリマーフィルム等の軽量で耐熱性に乏しい基板上に
形成するのに好適なTFTアクティブマトリックスの構
造および製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, and more particularly, to a structure of a TFT active matrix suitable for forming on a light weight substrate having poor heat resistance such as a plastic substrate or a polymer film. And a manufacturing method.

【0002】[0002]

【従来の技術】薄型,低消費電力の画像情報,文字情報
の表示装置として、薄膜トランジスタ(以下TFTと記
す)を用いたアクティブマトリックス方式の液晶ディス
プレイが可搬型のパーソナルコンピュータを中心に広く
用いられつつある。この種の液晶表示装置においては低
コスト化と並んでディスプレイモジュールの軽量化が重
要な課題である。このため、モジュールの重量の大半を
占めるガラス基板を軽量化するため板厚を薄くすること
が行われている。しかしながら、薄板化による軽量化に
はモジュール強度確保の点から限界があり、新たな対策
が必要となっている。このような背景から近年、ポリカ
ーボネイト等の軽量なプラスチック基板上にTFTを形
成する技術の開発が行われている。そのような技術の一
例が、コンファレンスレコードオブザ17thインターナ
ショナルディスプレイリサーチコンファレンス(Confere
nce Record of the 17th International Display Resea
rchConference)1997年,M−36頁からM−39
頁に記載されている。
2. Description of the Related Art As a thin, low power consumption display device for image information and character information, an active matrix type liquid crystal display using a thin film transistor (hereinafter referred to as TFT) is widely used mainly in a portable personal computer. is there. In this type of liquid crystal display device, along with cost reduction, weight reduction of the display module is an important issue. Therefore, in order to reduce the weight of the glass substrate, which occupies most of the weight of the module, the plate thickness has been reduced. However, there is a limit to the weight reduction due to the thin plate from the viewpoint of securing the module strength, and new measures are required. Against this background, in recent years, a technique for forming a TFT on a lightweight plastic substrate such as polycarbonate has been developed. An example of such technology is the Conference Record of the 17th International Display Research Conference (Confere
nce Record of the 17th International Display Resea
rchConference) 1997, pages M-36 to M-39.
Page.

【0003】[0003]

【発明が解決しようとする課題】このような従来の技術
における最大の課題は、基板の耐熱性が低いためいかに
基板にダメージを与えない程度の低温で高性能なTFT
を形成するかにある。この問題を解決するために例えば
TFTを構成するSi膜やゲート絶縁膜をスパッタリグ
等により低温で成膜したり、パルスレーザを用いて低温
でSi膜を再結晶化することが試みされている。しかし
ながら、このような低温プロセスで得られるTFTの特
性は実用上十分とはいえない。特に高品質なゲート絶縁
膜の低温形成が解決困難な課題である。さらに、プラス
チック基板は耐熱性のみでなく、耐薬品性にも問題があ
り、ホトリソグラフィ工程やエッチング工程で用いる各
種の薬品に対する耐性についても考慮する必要がある。
The greatest problem in such a conventional technique is that a high-performance TFT at a low temperature that does not damage the substrate due to the low heat resistance of the substrate.
To form. In order to solve this problem, for example, it has been attempted to form a Si film or a gate insulating film forming a TFT at a low temperature by a sputtering rig or to recrystallize the Si film at a low temperature using a pulse laser. However, the characteristics of the TFT obtained by such a low temperature process are not practically sufficient. Particularly, low-temperature formation of a high-quality gate insulating film is a difficult problem to solve. Further, the plastic substrate has not only heat resistance but also chemical resistance, and it is necessary to consider resistance to various chemicals used in the photolithography process and etching process.

【0004】以上の様に、プラスチック基板の上に直接
高性能なTFTを形成するためには解決すべき技術課題
が多く、従来のプロセス技術の延長では容易には達成で
きない。
As described above, there are many technical problems to be solved in order to directly form a high-performance TFT on a plastic substrate, and it cannot be easily achieved by extending the conventional process technology.

【0005】[0005]

【課題を解決するための手段】上記の課題を解決するた
めに本発明では以下の手段を講じた。
In order to solve the above problems, the present invention takes the following measures.

【0006】少なくとも一方が透明な一対の基板と、こ
の基板に挟持された液晶層を有する液晶表示装置の製造
方法において、ガラスあるいはSi等からなる第1の基
板上に複数の走査配線と、これに交差する複数の信号配
線と、前記走査配線と信号配線の交差点近傍にマトリク
ス状に配置された複数の半導体素子と、前記複数の半導
体素子に接続された画素電極からなるアクティブマトリ
クス素子を形成し、前記アクティブマトリクス素子上に
プラスチックやポリマーフィルム等の所望の材料からな
る第2の基板を接合したあと、化学研磨法等の手段で前
記第1の基板を除去し、前記第2の基板に対向するよう
に第3の基板を形成し、これらの間に挟持された液晶層
を形成する製造工程を採用した。
In a method of manufacturing a liquid crystal display device having a pair of substrates, at least one of which is transparent, and a liquid crystal layer sandwiched between the substrates, a plurality of scanning wirings are provided on a first substrate made of glass or Si. A plurality of signal wirings intersecting with each other, a plurality of semiconductor elements arranged in a matrix in the vicinity of the intersection of the scanning wirings and the signal wirings, and an active matrix element including pixel electrodes connected to the plurality of semiconductor elements is formed. After bonding a second substrate made of a desired material such as a plastic or polymer film on the active matrix element, the first substrate is removed by means such as chemical polishing, and the second substrate is opposed to the second substrate. Thus, the manufacturing process of forming the third substrate and forming the liquid crystal layer sandwiched between them is adopted.

【0007】上記方法によれば、TFTを含むアクティ
ブマトリクス素子はプラスチック基板の上に直接形成せ
ずに、耐熱性に優れたガラス基板やSi基板上に従来と
同様な製造工程により形成できるので、従来と同様な優
れた特性を有するTFTを形成可能である。また、この
TFTアクティブマトリクス素子を所望のプラスチック
基板に接着してプラスチック基板を土台として最初のガ
ラス基板等を除去することにより、アクティブマトリク
ス素子を高温の熱処理工程を経ることなくプラスチック
基板上に移すことができるので、軽量な基板上に高性能
なアクティブマトリクス基板を製造できる。
According to the above method, the active matrix element including the TFT can be formed on the glass substrate or the Si substrate having excellent heat resistance by the same manufacturing process as the conventional one without directly forming on the plastic substrate. It is possible to form a TFT having excellent characteristics similar to the conventional one. Further, by bonding the TFT active matrix element to a desired plastic substrate and removing the first glass substrate or the like using the plastic substrate as a base, the active matrix element can be transferred onto the plastic substrate without undergoing a high temperature heat treatment step. Therefore, a high-performance active matrix substrate can be manufactured on a lightweight substrate.

【0008】[0008]

【発明の実施の形態】以下、本発明の実施の形態を図面
を用いて説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

【0009】(実施の形態1)図1〜図5は本発明の第
1の実施の形態の製造方法を示す液晶表示装置の各工程
における断面図である。
(Embodiment 1) FIGS. 1 to 5 are sectional views showing respective steps of a liquid crystal display device showing a manufacturing method according to a first embodiment of the present invention.

【0010】ガラス基板1上にITOよりなる画素電極
130を形成し、その上にSiO2よりなる第1の絶縁
膜25を形成する。次に第1の絶縁膜上に半導体層3
0,ゲート絶縁膜20,走査配線10,層間絶縁膜2
2,信号配線11,ソース電極12,保護絶縁膜23を
順次形成し、TFTアクティブマトリクス素子を形成す
る(図1)。
A pixel electrode 130 made of ITO is formed on the glass substrate 1, and a first insulating film 25 made of SiO 2 is formed thereon. Next, the semiconductor layer 3 is formed on the first insulating film.
0, gate insulating film 20, scanning wiring 10, interlayer insulating film 2
2, the signal line 11, the source electrode 12, and the protective insulating film 23 are sequentially formed to form a TFT active matrix element (FIG. 1).

【0011】TFTアクティブマトリクス素子自体の製
造法は通常の半導体プロセスに準じた方法でよい。例え
ば、半導体層30は非晶質シリコン膜を減圧CVD法に
より形成温度450℃で形成後、エキシマレーザを照射
することにより多結晶シリコン膜に変換する方法により
形成した。また第1の絶縁膜25,ゲート絶縁膜20,
層間絶縁膜22,保護絶縁膜23はそれぞれプラズマC
VD法により形成した。形成温度は350℃である。ま
た、走査配線10,信号配線11,ソース電極12,画
素電極130はそれぞれスパッタリング法で形成した。
各膜のパターニングは通常のフォトリソグラフィ法によ
って行った。
The manufacturing method of the TFT active matrix device itself may be a method according to a normal semiconductor process. For example, the semiconductor layer 30 is formed by a method of converting an amorphous silicon film into a polycrystalline silicon film by irradiating an excimer laser after forming an amorphous silicon film at a formation temperature of 450 ° C. In addition, the first insulating film 25, the gate insulating film 20,
The interlayer insulating film 22 and the protective insulating film 23 are plasma C, respectively.
It was formed by the VD method. The formation temperature is 350 ° C. Further, the scanning wiring 10, the signal wiring 11, the source electrode 12, and the pixel electrode 130 are formed by the sputtering method.
The patterning of each film was performed by a normal photolithography method.

【0012】次に完成したTFTアクティブマトリクス
基板上に接着層としてエポキシ樹脂29を塗布し、さら
にポリエステルからなるプラスチック基板100を接合
する(図2)。
Next, an epoxy resin 29 is applied as an adhesive layer on the completed TFT active matrix substrate, and further a plastic substrate 100 made of polyester is bonded (FIG. 2).

【0013】次にプラスチック基板を土台として、化学
機械研磨法によりガラス基板1を研磨し除去する(図
3)。
Next, the glass substrate 1 is polished and removed by the chemical mechanical polishing method using the plastic substrate as a base (FIG. 3).

【0014】この時ガラス基板1上に最初に形成したI
TOからなる画素電極130がエッチングストッパとし
ての役割を果たすので、基板を削りすぎてTFT素子に
ダメージを与えることを防止できる。以上の工程により
プラスチック基板上に形成されたTFTアクティブマト
リクス素子を得る。
At this time, the I formed first on the glass substrate 1
Since the pixel electrode 130 made of TO functions as an etching stopper, it is possible to prevent the TFT element from being damaged by cutting the substrate too much. Through the above steps, a TFT active matrix device formed on a plastic substrate is obtained.

【0015】次に、研磨した面に液晶分子を配向させる
ための配向膜ORI2を塗布し、焼成後ラビング処理を
施す(図4)。
Next, an alignment film ORI2 for aligning liquid crystal molecules is applied to the polished surface, and after rubbing, rubbing treatment is performed (FIG. 4).

【0016】最後に、一方の面に遮光膜512とカラー
フィルター膜507とITOよりなる対向電極510
と、配向処理を施した配向膜ORI1を形成したプラス
チックからなる対向基板508と先に形成したTFT基
板をスペーサビーサ等を用いて4ミクロンの間隔を持っ
て対向配置し、その間に液晶組成物506を封入しプラ
スチック基板を用いた液晶セルが完成する(図5)。
Finally, a light-shielding film 512, a color filter film 507, and a counter electrode 510 made of ITO are formed on one surface.
Then, the counter substrate 508 made of plastic on which the alignment film ORI1 subjected to the alignment treatment is formed and the TFT substrate previously formed are arranged to face each other with a space of 4 microns using a spacer beer or the like, and the liquid crystal composition 506 is provided between them. A liquid crystal cell using a sealed plastic substrate is completed (FIG. 5).

【0017】この後、TFTを駆動するための外部駆動
回路を実装して液晶表示装置が完成する。
After that, an external drive circuit for driving the TFT is mounted to complete the liquid crystal display device.

【0018】本実施例によれば、先にも述べたように、
最初の基板がガラスであるので、TFTアクティブマト
リクス素子自体の製造法は通常の半導体プロセスに準じ
た方法を用いることができるので、高性能なTFTを得
ることができる。TFTの性能が優れていることによ
り、高精細の画像を容易に表示できる。
According to this embodiment, as described above,
Since the first substrate is glass, the manufacturing method of the TFT active matrix device itself can use a method conforming to a normal semiconductor process, so that a high-performance TFT can be obtained. Due to the excellent performance of the TFT, a high definition image can be easily displayed.

【0019】また、上記実施例では外部駆動回路はTF
T基板の外部に接続する例を述べたが、高性能なTFT
を利用して駆動回路をもTFTで構成し、同じプラスチ
ック基板上に形成することも容易となる。このようにす
ることにより、実装に係る部品数を削減し、コストを低
減できる。
In the above embodiment, the external drive circuit is TF.
I have described an example of connecting to the outside of the T substrate, but a high-performance TFT
It is also easy to form a drive circuit with a TFT by utilizing the above, and to form it on the same plastic substrate. By doing so, the number of parts related to mounting can be reduced and the cost can be reduced.

【0020】また、TFTを形成するのとは別種の基板
を後から接合するので基板の材質は様々なものを使用可
能であり、本実施例の様にプラスチック基板を用いるこ
とにより極めて軽量な表示装置を実現できる。上記実施
例では基板としてポリエステルを用いたが、基板はこれ
に限られるものではなく、ポリカーボネイト,アクリル
基板やPETなどのプラスチックフィルムも用いること
ができる。特にプラスチックフィルムを基板に用いるこ
とにより曲げることが可能な表示装置が得られる。その
ような例を次に示す。
Further, since a substrate of a different type from that for forming the TFT is bonded later, various materials can be used for the substrate. By using a plastic substrate as in this embodiment, an extremely lightweight display can be obtained. The device can be realized. Although polyester is used as the substrate in the above embodiments, the substrate is not limited to this, and a plastic film such as a polycarbonate or acrylic substrate or PET can also be used. In particular, by using a plastic film for the substrate, a bendable display device can be obtained. Such an example is shown below.

【0021】(実施の形態2)図6〜図10は本発明の
第2の実施の形態の製造方法を示す液晶表示装置の各工
程における断面図である。
(Embodiment 2) FIGS. 6 to 10 are sectional views showing respective steps of a liquid crystal display device showing a manufacturing method according to a second embodiment of the present invention.

【0022】ガラス基板1上に第1の実施の形態と同様
に、Alよりなる反射型の画素電極131を形成し、そ
の上にSiO2 よりなる第1の絶縁膜25を形成する。
次に第1の絶縁膜上に半導体層30,ゲート絶縁膜2
0,走査配線10,層間絶縁膜22,信号配線11,ソ
ース電極12,保護絶縁膜23を順次形成し、TFTア
クティブマトリクス素子を形成する(図6)。
Similar to the first embodiment, a reflective pixel electrode 131 made of Al is formed on the glass substrate 1, and a first insulating film 25 made of SiO 2 is formed thereon.
Next, the semiconductor layer 30 and the gate insulating film 2 are formed on the first insulating film.
0, the scanning wiring 10, the interlayer insulating film 22, the signal wiring 11, the source electrode 12, and the protective insulating film 23 are sequentially formed to form a TFT active matrix element (FIG. 6).

【0023】次に完成したTFTアクティブマトリクス
基板上に接着層としてエポキシ樹脂29を塗布し、さら
にPETからなるプラスチックフィルム101を接合す
る(図7)。
Next, an epoxy resin 29 is applied as an adhesive layer on the completed TFT active matrix substrate, and further a plastic film 101 made of PET is bonded (FIG. 7).

【0024】次にプラスチック基板を土台として、化学
機械研磨法によりガラス基板1を研磨し除去する(図
8)。
Next, the glass substrate 1 is polished and removed by the chemical mechanical polishing method using the plastic substrate as a base (FIG. 8).

【0025】次にガラス基板を研磨除去した面に高分子
分散液晶(PDLC)550を塗布する(図9)。
Next, polymer dispersed liquid crystal (PDLC) 550 is applied to the surface of the glass substrate which has been polished and removed (FIG. 9).

【0026】最後に一方の面に対向電極510を形成し
たPETからなる対向基板518を高分子分散液晶55
0上に接着してPET基板上の反射型の液晶セルが完成
する(図10)。
Finally, a counter substrate 518 made of PET having a counter electrode 510 formed on one surface is provided with a polymer dispersed liquid crystal 55.
Then, the liquid crystal cell of the reflection type on the PET substrate is completed by adhering on the surface of the substrate (FIG. 10).

【0027】本実施の形態においては基板にPETフィ
ルムを用い、さらに液晶層にシート状の高分子分散液晶
を用いたので、極めて軽量薄型で折り曲げ可能な表示装
置が実現できる。
In the present embodiment, since the PET film is used for the substrate and the sheet-shaped polymer dispersed liquid crystal is used for the liquid crystal layer, an extremely lightweight and bendable display device can be realized.

【0028】また、第1の実施の形態と同様に、最初の
基板がガラスであるので、TFTアクティブマトリクス
素子自体の製造法は通常の半導体プロセスに準じた方法
を用いることができるので、高性能なTFTを得ること
ができる。TFTの性能が優れていることにより、高精
細の画像を容易に表示できる。
Further, as in the first embodiment, since the first substrate is glass, the manufacturing method of the TFT active matrix element itself can be a method in conformity with a normal semiconductor process, and therefore has high performance. It is possible to obtain various TFTs. Due to the excellent performance of the TFT, a high definition image can be easily displayed.

【0029】また、上記実施例では外部駆動回路はTF
T基板の外部に接続する例を述べたが、高性能なTFT
を利用して駆動回路をもTFTで構成し、同じプラスチ
ック基板上に形成することも容易となる。このようにす
ることにより、実装に係る部品数を削減し、コストを低
減できる。
In the above embodiment, the external drive circuit is TF.
I have described an example of connecting to the outside of the T substrate, but a high-performance TFT
It is also easy to form a drive circuit with a TFT by utilizing the above, and to form it on the same plastic substrate. By doing so, the number of parts related to mounting can be reduced and the cost can be reduced.

【0030】(実施の形態3)図11〜図17は本発明
の第3の実施の形態の製造方法を示す液晶表示装置の各
工程における断面図である。
(Embodiment 3) FIGS. 11 to 17 are sectional views in each step of a liquid crystal display device showing a manufacturing method according to a third embodiment of the present invention.

【0031】ガラス基板1上に第1の実施の形態と同様
に、ITOよりなる外部接続端子132を形成し、その
上にSiO2 よりなる第1の絶縁膜25を形成する。次
に第1の絶縁膜上に半導体層30,ゲート絶縁膜20,
走査配線10,層間絶縁膜22,信号配線11,ソース
電極,保護絶縁膜23,Alよりなる反射型画素電極1
31を順次形成し、TFTアクティブマトリクス素子を
形成する(図11)。
Similar to the first embodiment, the external connection terminal 132 made of ITO is formed on the glass substrate 1, and the first insulating film 25 made of SiO 2 is formed thereon. Next, on the first insulating film, the semiconductor layer 30, the gate insulating film 20,
Scanning line 10, interlayer insulating film 22, signal line 11, source electrode, protective insulating film 23, reflective pixel electrode 1 made of Al
31 are sequentially formed to form a TFT active matrix element (FIG. 11).

【0032】次にTFTアクティブマトリクス素子上に
高分子分散液晶(PDLC)550を塗布する(図1
2)。
Next, polymer dispersed liquid crystal (PDLC) 550 is applied on the TFT active matrix device (see FIG. 1).
2).

【0033】最後に一方の面に対向電極510を形成し
たポリエステルからなる対向基板508を高分子分散液
晶550上に接着する(図13)。
Finally, a counter substrate 508 made of polyester having a counter electrode 510 formed on one surface is adhered onto the polymer dispersed liquid crystal 550 (FIG. 13).

【0034】次に、プラスチックの対向基板508を土
台として、化学機械研磨法によりガラス基板1を研磨し
除去する(図14)。
Next, the glass substrate 1 is polished and removed by the chemical mechanical polishing method using the plastic counter substrate 508 as a base (FIG. 14).

【0035】この時ガラス基板1上に最初に形成したI
TOからなる外部接続端子132がエッチングストッパ
としての役割を果たすので、基板を削りすぎてTFT素
子にダメージを与えることを防止できる。以上の工程に
よりプラスチック基板上に形成されたTFTアクティブ
マトリクス素子を得る。
At this time, the I formed first on the glass substrate 1
Since the external connection terminal 132 made of TO serves as an etching stopper, it is possible to prevent the TFT element from being damaged by cutting the substrate too much. Through the above steps, a TFT active matrix device formed on a plastic substrate is obtained.

【0036】最後に、TFTアクティブマトリクスを駆
動するドライバ回路600をソルダーSLDを介して、
対向基板とは反対側の面に露出した外部接続端子132
にボンディングして液晶表示装置が完成する(図1
5)。
Finally, the driver circuit 600 for driving the TFT active matrix is connected via the solder SLD to
External connection terminal 132 exposed on the surface opposite to the counter substrate
The liquid crystal display device is completed by bonding to (Fig. 1
5).

【0037】図16および図17は完成した液晶表示装
置をTFT基板側から見た全体平面図およびA−A′で
の断面図である。従来の液晶表示装置では、TFT基板
の表面にドライバ回路を実装するためのボンディングパ
ッドを形成する必要があったため表示エリアの周辺にこ
のための領域を取る必要があり、額縁と呼ばれる表示領
域周辺部分の面積を縮小することには限界があったが、
本実施の形態の液晶表示装置ではドライバ回路をTFT
基板の裏面に実装できるので、図17からわかるように
TFT基板と対向基板は同じ大きさにすることができ、
額縁を縮小できる効果がある。よって、従来に比べてよ
りコンパクトな端末機器を構成することができる。
16 and 17 are an overall plan view and a sectional view taken along line AA 'of the completed liquid crystal display device as seen from the TFT substrate side. In the conventional liquid crystal display device, it is necessary to form a bonding pad for mounting a driver circuit on the surface of the TFT substrate, and therefore it is necessary to provide a region for this around the display area. There was a limit to reducing the area of
In the liquid crystal display device of the present embodiment, the driver circuit is a TFT
Since it can be mounted on the back surface of the substrate, as can be seen from FIG. 17, the TFT substrate and the counter substrate can have the same size,
This has the effect of reducing the frame. Therefore, it is possible to configure a terminal device that is more compact than the conventional one.

【0038】また本発明の液晶表示装置の製造方法およ
び構成は、上記の3つの例に限定されるものではない。
例えば、TFTとしては、非晶質シリコンを用いた逆ス
タガ型の素子も同様に用いることができる。また、単結
晶シリコン基板上に形成したMOSトランジスタであっ
ても、ガラス基板を研磨する工程でシリコン基板を研磨
除去するようにすることにより適用可能である。また、
液晶表示モードについても、例えば、TN液晶や高分子
分散液晶以外にも、ゲストホスト液晶や強誘電液晶等も
同様に用いることができる。
The manufacturing method and structure of the liquid crystal display device of the present invention are not limited to the above three examples.
For example, as the TFT, an inverted stagger type element using amorphous silicon can be similarly used. Further, even a MOS transistor formed on a single crystal silicon substrate can be applied by polishing and removing the silicon substrate in the step of polishing the glass substrate. Also,
Regarding the liquid crystal display mode, for example, guest-host liquid crystal, ferroelectric liquid crystal, and the like can be similarly used in addition to TN liquid crystal and polymer dispersed liquid crystal.

【0039】[0039]

【発明の効果】以上の様に本発明によれば、プラスチッ
ク基板やポリマーフィルム等の軽量で耐熱性に乏しい基
板上にも高性能のTFTを形成できる。
As described above, according to the present invention, a high performance TFT can be formed even on a light weight substrate having poor heat resistance such as a plastic substrate or a polymer film.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 1 is a schematic sectional view showing a method of manufacturing a liquid crystal display device according to a first embodiment of the present invention.

【図2】本発明の第1の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 2 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the first embodiment of the invention.

【図3】本発明の第1の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 3 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the first embodiment of the invention.

【図4】本発明の第1の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 4 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the first embodiment of the invention.

【図5】本発明の第1の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 5 is a schematic sectional view showing the method of manufacturing the liquid crystal display device according to the first embodiment of the invention.

【図6】本発明の第2の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 6 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the second embodiment of the invention.

【図7】本発明の第2の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 7 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the second embodiment of the invention.

【図8】本発明の第2の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 8 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the second embodiment of the invention.

【図9】本発明の第2の実施の形態に係る液晶表示装置
の製造方法を示す断面模式図。
FIG. 9 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the second embodiment of the invention.

【図10】本発明の第2の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。
FIG. 10 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the second embodiment of the invention.

【図11】本発明の第3の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。
FIG. 11 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the third embodiment of the invention.

【図12】本発明の第3の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。
FIG. 12 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the third embodiment of the invention.

【図13】本発明の第3の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。
FIG. 13 is a schematic sectional view showing a method of manufacturing a liquid crystal display device according to a third embodiment of the present invention.

【図14】本発明の第3の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。
FIG. 14 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the third embodiment of the invention.

【図15】本発明の第3の実施の形態に係る液晶表示装
置の製造方法を示す断面模式図。
FIG. 15 is a schematic cross-sectional view showing the method of manufacturing the liquid crystal display device according to the third embodiment of the invention.

【図16】発明の第3の実施の形態に係る液晶表示装置
平面模式図。
FIG. 16 is a schematic plan view of a liquid crystal display device according to a third embodiment of the invention.

【図17】発明の第3の実施の形態に係る液晶表示装置
断面模式図。
FIG. 17 is a schematic sectional view of a liquid crystal display device according to a third embodiment of the invention.

【符号の説明】[Explanation of symbols]

1…ガラス基板、10…走査配線、11…信号配線、1
2…ソース電極、15…接続電極、20…ゲート絶縁
膜、22…層間絶縁膜、23…保護絶縁膜、25…第1
の絶縁膜、29…エポキシ樹脂、30…半導体層、10
0…プラスチックフィルム、101…PETフィルム、
ORI1,ORI2…配向膜、130,131…画素電
極、505…偏光板、506…液晶組成物、507…カ
ラーフィルター膜、508,518…対向基板、510
…対向電極、512…遮光膜、550…高分子分散液
晶、SLD…ソルダー、DIS…表示領域、600…ド
ライバ回路。
1 ... Glass substrate, 10 ... Scan wiring, 11 ... Signal wiring, 1
2 ... Source electrode, 15 ... Connection electrode, 20 ... Gate insulating film, 22 ... Interlayer insulating film, 23 ... Protective insulating film, 25 ... First
Insulating film, 29 ... Epoxy resin, 30 ... Semiconductor layer, 10
0 ... Plastic film, 101 ... PET film,
ORI1, ORI2 ... Alignment film, 130, 131 ... Pixel electrode, 505 ... Polarizing plate, 506 ... Liquid crystal composition, 507 ... Color filter film, 508, 518 ... Counter substrate, 510
... counter electrode, 512 ... light-shielding film, 550 ... polymer dispersed liquid crystal, SLD ... solder, DIS ... display area, 600 ... driver circuit.

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G02F 1/1368 G02F 1/1333 G02F 1/1333 500 H01L 29/786 ─────────────────────────────────────────────────── --Continued from the front page (58) Fields surveyed (Int.Cl. 7 , DB name) G02F 1/1368 G02F 1/1333 G02F 1/1333 500 H01L 29/786

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】第一の基板上に外部接続端子を形成する工
程と、 該外部接続端子上に絶縁膜を形成する工程と、 該絶縁膜上に複数の走査配線と、該複数の走査配線に交
差する複数の信号配線と、前記走査配線と前記信号配線
の交差点近傍にマトリクス状に配置された複数の半導体
素子と、前記複数の半導体素子に接続された画素電極か
らなるアクティブマトリクス素子を形成する工程と、 前記アクティブマトリクス素子上に前記液晶層を形成す
る工程と、 前記液晶層上に対向基板を形成する工程と、 前記第一の基板を除去して前記外部接続電極を露出させ
る工程と、 駆動回路を内蔵したドライバチップを、前記対向基板と
反対の面において前記外部接続端子と接続する工程と、
を有する液晶表示装置の製造方法。
1. A step of forming an external connection terminal on a first substrate, a step of forming an insulating film on the external connection terminal, a plurality of scanning wirings on the insulating film, and a plurality of scanning wirings. A plurality of signal wirings intersecting with each other, a plurality of semiconductor elements arranged in a matrix in the vicinity of an intersection of the scanning wirings and the signal wirings, and an active matrix element including pixel electrodes connected to the plurality of semiconductor elements is formed. A step of forming the liquid crystal layer on the active matrix element, a step of forming a counter substrate on the liquid crystal layer, and a step of removing the first substrate to expose the external connection electrode. A step of connecting a driver chip containing a drive circuit to the external connection terminal on a surface opposite to the counter substrate,
And a method for manufacturing a liquid crystal display device.
【請求項2】第一の基板上に外部接続電極端子を接続す
る工程と、 前記外部接続電極上に絶縁膜を形成する工程と、 該絶縁膜上に複数の走査配線と、該複数の走査配線に交
差する複数の信号配線と、前記走査配線と前記信号配線
の交差点近傍にマトリクス状に配置された複数の半導体
素子と、前記複数の半導体素子に接続された画素電極か
らなるアクティブマトリクス素子を形成する工程と、 前記第一の基板に対向する対向基板を配置し、これらの
間に液晶層を形成する工程と、 前記第一の基板を除去して前記外部接続電極を露出させ
る工程と、 駆動回路を内蔵したドライバチップを、前記対向基板と
反対の面において前記外部接続端子と接続する工程と、
を有する液晶表示装置の製造方法。
2. A step of connecting an external connection electrode terminal to a first substrate, a step of forming an insulating film on the external connection electrode, a plurality of scan wirings on the insulating film, and a plurality of scans. An active matrix element including a plurality of signal wirings intersecting the wirings, a plurality of semiconductor elements arranged in a matrix in the vicinity of an intersection of the scanning wirings and the signal wirings, and pixel electrodes connected to the plurality of semiconductor elements. A step of forming, a step of arranging a counter substrate facing the first substrate, forming a liquid crystal layer between them, a step of removing the first substrate to expose the external connection electrode, Connecting a driver chip having a built-in drive circuit to the external connection terminal on a surface opposite to the counter substrate;
And a method for manufacturing a liquid crystal display device.
【請求項3】前記第一の基板、前記対向基板の少なくと
も一方が、有機化合物を主成分とする材料又は金属箔で
あることを特徴とする請求項1又は2に記載の製造方
法。
3. The method according to claim 1, wherein at least one of the first substrate and the counter substrate is a material containing an organic compound as a main component or a metal foil.
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