JP3466227B2 - Method for forming TiN thin film - Google Patents
Method for forming TiN thin filmInfo
- Publication number
- JP3466227B2 JP3466227B2 JP11770993A JP11770993A JP3466227B2 JP 3466227 B2 JP3466227 B2 JP 3466227B2 JP 11770993 A JP11770993 A JP 11770993A JP 11770993 A JP11770993 A JP 11770993A JP 3466227 B2 JP3466227 B2 JP 3466227B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ratio
- target
- plasma
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 23
- 230000007423 decrease Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】この発明はスパッタリング装置を
用いて均一な比抵抗分布をもつＴｉＮ薄膜を形成するＴ
ｉＮ薄膜形成方法に関するものである。
【０００２】
【従来の技術】スパッタリング法は、イオンをターゲッ
トに照射し、ターゲット表面の物質と衝突させてこれを
蒸発させ、蒸発したターゲット物質を基板上に付着さ
せ、薄膜を形成するもので、薄膜形成の分野で広く用い
られている。
【０００３】従来のＴｉＮ薄膜形成方法に用いられるマ
グネトロンスパッタリング装置の一例が図１２に示され
ており、同図において、真空槽１内には基板２とターゲ
ット３とが対向して配設され、ターゲット３の背後には
コイル４が設けられている。コイル４にはマグネットコ
イル電源５が接続され、そのマグネットコイル電源５よ
りコイル４に電流を流すと、ターゲット３の表面近傍の
空間に磁界が形成されるようになる。真空槽１とターゲ
ット３との間にはスパッタ電源６が接続されている。真
空槽１と基板２とは同電位になるように構成されている
ため、スパッタ電源６より電圧をかけ、基板２を陽極、
ターゲット３を陰極にするようにしている。真空槽１に
はスパッタガスを導入するスパッタガス供給口７と、真
空排気口８とが設けられている。
【０００４】このようなマグネトロンスパッタリング装
置を使用して反応性スパッタリングを行う場合には、次
のような手順で行う。
まず、真空槽１内を真空排気して、真空槽１内を１０
-5Ｐａ以下の高真空にした後、スパッタガス供給口７よ
りスパッタガスを導入して真空槽１内を１０-1Ｐａ程度
の低圧に保つ。
次に、マグネットコイル電源５よりコイル４に電流を
所定の周期で流して、ターゲット３の表面近傍の空間に
磁界が形成する。
その次に、スパッタ電源６より真空槽１とターゲット
３とに電圧を印加して、基板２を陽極、ターゲット３を
陰極にすると、ターゲット３より放出された電子がスパ
ッタガスと衝突し、真空槽１内にプラズマが発生する。
真空槽１内のプラズマ中の正イオンは、陰極であるタ
ーゲット３と衝突し、ターゲット３の表面をスパッタす
る。そのため、ターゲット３を構成する材料の粒子が放
出され、その粒子が基板２に付着して、基板２の表面に
薄膜が形成されるようになる。その際、ターゲット３よ
り放出された粒子はスパッタガス中に含まれている反応
性ガスと反応するため、基板２の表面に形成される薄膜
はターゲット材料の反応生成物となる。
【０００５】したがって、ターゲット３の材料としてＴ
ｉ、スパッタガスとしてＡｒとＮ2を使用したとき、基
板２の表面にはＴｉＮ薄膜が形成される。このＴｉＮ薄
膜の主な用途はＩＣやＬＳＩ上のアルミ配線のバリア膜
である。
【０００６】
【発明が解決しようとする課題】従来のマグネトロンス
パッタリング装置を用いたＴｉＮ薄膜形成方法は、コイ
ル４に電流を所定の周期で流すと同時に、この電流と同
期して、スパッタ電源６からの電力を増減させ、ターゲ
ット３の表面近傍の空間に形成される環状のプラズマ発
生領域を所定の周期で少なくとも１回以上移動させなが
らスパッタ量を増減させる。そして、それぞれの環状の
プラズマ発生領域において成膜することにより、基板２
に±５％以下の膜厚分布の薄膜を形成することが出来
る。
【０００７】その場合、コイル４に電流を流すことによ
って形成されるターゲット３の電磁石カソードの特性と
しては、コイル４に流す電流を変化させることでプラ
ズマの直径を可変できる。電磁石電流を増減させるこ
とで磁場強度を可変できる。プラズマの直径の可変動
作に同期して、スパツタパワーを可変できる。
【０００８】ところが、ＴｉＮを成膜するような反応性
スパッタにおいては、移動する環状のプラズマ発生領域
のそれぞれの場所で、比抵抗の異なった薄膜が成膜され
ることになる。これは移動するプラズマ発生領域に対し
て、放電面積が変化するため、パワー密度が変動し、Ｔ
ｉＮの成膜に際して、ＴｉとＮの反応率が違ってくるた
めである。そのため、合成されて成膜されたＴｉＮ薄膜
の比抵抗分布が悪くなり、±３０％程度の値であった。
このように従来は、比抵抗分布と膜厚分布とを独立に制
御することが困難であった。
【０００９】この発明の目的は、従来の問題を解決し
て、反応性スパッタによる薄膜の比抵抗分布と膜厚分布
とを均一にすることが可能なＴｉＮ薄膜形成方法を提供
することである。
【００１０】
【課題を解決するための手段】上記課題を解決するため
に、請求項１記載の発明は、真空槽内に基板と対向して
配設したターゲットの背後に、環状の内側コイルとその
周囲に配置された環状の外側コイルとで構成された電磁
石を設け、それらの電磁石によって形成される環状のプ
ラズマ領域の直径を変えて、複数回に分けて、ターゲッ
トをスパッタして、基板にＴｉＮ 薄膜を形成するＴｉ
Ｎ薄膜形成方法において、最初、複数の異なる直径のプ
ラズマ領域を形成させるそれぞれの場合の、環状の内側
コイルに流す電流と、環状の外側コイルに流す電流との
比率を求め、前記比率によって決定される環状のプラズ
マの直径を求め、次に、前記比率を変えないで、前記各
コイルに流す電流値を下げ、磁界強度を弱めて、比抵抗
が低くなる条件と、投入するスパッタ電力を変化させ、
比抵抗が低くなる条件とを求め、その次に、これらの条
件から、複数の異なる直径のプラズマ領域を形成させる
それぞれの場合の、前期比率、電流値、スパッタ電力を
決定して、それらの場合の成膜速度分布を求め、最後
に、複数の異なる直径のプラズマ領域で複数回に分けて
成膜した場合に、積算した膜厚分布が最も平坦になるよ
うに、異なる大きさのプラズマ領域での成膜時間の比率
を算出してから、そのとおりに基板上に薄膜を形成する
ことを特徴とするＴｉＮ 薄膜形成方法を特徴とするも
のである。
【００１１】
【作用】この発明においては、上記のように比抵抗が低
くなる条件から膜厚分布を求め、その膜厚分布が最も平
坦になる比率を算出してから、基板上に薄膜を形成する
ようにしているので、基板上に形成されるＴｉＮ薄膜は
均一な比抵抗分布と膜厚分布とが得られる。
【００１２】
【作用】
【実施例】以下、この発明の実施例について説明する。
図１はこの発明の実施例の方法に用いられる装置を示し
ており、同図において、真空槽（図示せず）内には基板
２とターゲット３とが対向して配設され、ターゲット３
の背後には電磁石１０が設けられている。電磁石１０は
環状の内側コイル１０ａと、その周囲に配置された環状
の外側コイル１０ｂとで構成され、この２つのコイル１
０ａ、１０ｂに流れる電流を変化させることによって、
環状のプラズマ発生領域１１が移動する。環状のプラズ
マはターゲット３の中央に対して同心円状に発生し、そ
の環状のプラズマの中心を通る円の直径は、内側コイル
１０ａと外側コイル１０ｂに流す電流比によって決定さ
れ、図２のようになる。
【００１３】図２で得られるプラズマ直径を可変して、
スパッタ電力を６ＫＷ（一定）で成膜すると、比抵抗値
は図３のようになる。この時、圧力は２．９×１０-1Ｐ
ａ、導入ガス量はＮ2 ；２０ｓｃｃｍ、Ａｒ；２０ｓｃ
ｃｍ、基板２とターゲット３との間の距離は６０ｍｍで
ある。
【００１４】図４〜図７は導入ガス比、圧力等の条件を
変えたときの比抵抗のスパッタ電力に対する依存性を示
したグラフである。図４は内側コイル１０ａに２．２ア
ンペア、外側コイル１０ｂに１０．０アンペアを流し、
プラズマ直径１０５ｍｍ、導入ガス比５０％にしたとき
のグラフで、スパッタ電力を上げることによって、比抵
抗が下がっていく。図５は内側コイル１０ａに２．２ア
ンペア、外側コイル１０ｂに１０．０アンペアを流し、
導入ガス比８０％にしたときのグラフで、スパッタ電力
を４ＫＷにしたときに、比抵抗が最低になる。図６は内
側コイル１０ａに１０．０アンペア、外側コイル１０ｂ
に−２．０アンペアを流し、プラズマ直径２０２ｍｍ、
導入ガス比５０％にしたときのグラフで、スパッタ電力
が６ＫＷまでは、比抵抗が低下するが、スパッタ電力が
８ＫＷでは比抵抗が上昇する。その理由は、ＴｉとＮ2
との反応の際に、Ｎ2 が不足しているためである。図７
は内側コイル１０ａに１０．０アンペア、外側コイル１
０ｂに−２．０アンペアを流し、導入ガス比８０％にし
たときのグラフで、スパッタ電力の低下つれて、比抵抗
も低下する。
【００１５】ＴｉＮ薄膜は低抵抗が要求されるため、プ
ラズマ直径１０５ｍｍの時（図４、図５）と、プラズマ
直径２０２ｍｍの時（図６、図７）に低抵抗になる条件
を選択すると、基板２上での比抵抗分布が均一になり、
比抵抗値も低くなる。
【００１６】プラズマ直径は、図２のように内側コイル
１０ａの電流と、外側コイル１０ｂの電流との比によっ
て決定するが、この比率を変えないで、電流値を下げて
ゆくと、プラズマ直径を変えないで、磁場強度を弱める
ことができる。図８はプラズマ直径が２０２ｍｍ、内側
コイル１０ａと外側コイル１０ｂの電流比が同一で、電
流値を下げた時の比抵抗の面内分布を示しており、電流
値を下げると、比抵抗は下がる。
【００１７】このように低抵抗の条件として、プラズマ
直径１０５ｍｍの時に、内側コイル１０ａの電流２．２
アンペア、外側コイル１０ｂの電流１０．０アンペア、
スパッタ電力４ＫＷが選択できる。また、プラズマ直径
２０２ｍｍの時に、内側コイル１０ａの電流３．０アン
ペア、外側コイル１０ｂの電流−０．６アンペア、スパ
ッタ電力１２ＫＷが選択できる。これら２つの条件での
膜厚分布を図９に示している。図９において、２つの曲
線をある比率で合成すると、基板２上での膜厚分布が得
られる。この時、膜厚分布が最も平坦になる比率を計算
により求めてから、実際に成膜する。その結果が図１０
および図１１で、上記２つの曲線をある比率は３：１４
である。この方法により、膜厚分布±２．８１％、比抵
抗分布±４．４８％が得られる。
【００１８】
【発明の効果】この発明は、上記のように比抵抗が低く
なる条件から膜厚分布を求め、その膜厚分布が最も平坦
になる比率を算出してから、基板上に薄膜を形成するよ
うにしているので、基板上に形成されるＴｉＮ薄膜は均
一な比抵抗分布と膜厚分布が得られる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a TiN thin film having a uniform resistivity distribution using a sputtering apparatus.
The present invention relates to a method for forming an iN thin film. 2. Description of the Related Art The sputtering method irradiates a target with ions, collides with a target surface material, evaporates the target material, and attaches the evaporated target material to a substrate to form a thin film. Widely used in the field of thin film formation. [0003] An example of a magnetron sputtering apparatus used in a conventional TiN thin film forming method is shown in FIG. 12, in which a substrate 2 and a target 3 are arranged in a vacuum chamber 1 so as to face each other. Behind the target 3, a coil 4 is provided. A magnet coil power supply 5 is connected to the coil 4. When a current flows from the magnet coil power supply 5 to the coil 4, a magnetic field is formed in a space near the surface of the target 3. A sputtering power source 6 is connected between the vacuum chamber 1 and the target 3. Since the vacuum chamber 1 and the substrate 2 are configured to have the same electric potential, a voltage is applied from the sputtering power source 6 and the substrate 2
The target 3 is used as a cathode. The vacuum chamber 1 is provided with a sputtering gas supply port 7 for introducing a sputtering gas and a vacuum exhaust port 8. [0004] When performing reactive sputtering using such a magnetron sputtering apparatus, the following procedure is performed. First, the inside of the vacuum chamber 1 is evacuated to vacuum, and
After a high vacuum of -5 Pa or less, a sputtering gas is introduced from the sputtering gas supply port 7 to maintain the inside of the vacuum chamber 1 at a low pressure of about 10 -1 Pa. Next, a current is caused to flow from the magnet coil power supply 5 to the coil 4 at a predetermined cycle, and a magnetic field is formed in a space near the surface of the target 3. Next, when a voltage is applied to the vacuum chamber 1 and the target 3 from the sputtering power source 6 to make the substrate 2 an anode and the target 3 a cathode, the electrons emitted from the target 3 collide with the sputtering gas, and the vacuum chamber A plasma is generated in 1. Positive ions in the plasma in the vacuum chamber 1 collide with the target 3 serving as a cathode, and sputter the surface of the target 3. As a result, particles of the material constituting the target 3 are released, and the particles adhere to the substrate 2 to form a thin film on the surface of the substrate 2. At this time, since the particles released from the target 3 react with the reactive gas contained in the sputtering gas, the thin film formed on the surface of the substrate 2 becomes a reaction product of the target material. Therefore, T 3 is used as the material of the target 3.
i, When Ar and N 2 are used as a sputtering gas, a TiN thin film is formed on the surface of the substrate 2. The main use of this TiN thin film is as a barrier film for aluminum wiring on ICs and LSIs. In a conventional method of forming a TiN thin film using a magnetron sputtering apparatus, a current is supplied to a coil 4 at a predetermined cycle, and at the same time, a sputter power supply 6 The amount of sputtering is increased or decreased while moving the annular plasma generation region formed in the space near the surface of the target 3 at least once at a predetermined cycle. Then, by forming a film in each annular plasma generation region, the substrate 2 is formed.
A thin film having a thickness distribution of ± 5% or less can be formed. In this case, as a characteristic of the electromagnet cathode of the target 3 formed by applying a current to the coil 4, the diameter of the plasma can be varied by changing the current applied to the coil 4. The magnetic field strength can be varied by increasing or decreasing the electromagnet current. The sputter power can be varied in synchronization with the operation of varying the plasma diameter. However, in the reactive sputtering for forming a TiN film, thin films having different specific resistances are formed at each of the moving annular plasma generating regions. This is because the discharge area changes with respect to the moving plasma generation region, the power density fluctuates, and T
This is because the reaction rates of Ti and N differ when forming iN. For this reason, the specific resistance distribution of the synthesized and deposited TiN thin film was deteriorated, and was about ± 30%.
As described above, conventionally, it has been difficult to independently control the resistivity distribution and the film thickness distribution. An object of the present invention is to solve the conventional problems and to provide a TiN thin film forming method capable of making the specific resistance distribution and the film thickness distribution of a thin film by reactive sputtering uniform. [0010] In order to solve the above-mentioned problems, the invention according to the first aspect of the present invention is to provide an annular inner coil behind a target disposed in a vacuum chamber so as to face a substrate. An electromagnet composed of an annular outer coil disposed around the magnet is provided, the diameter of an annular plasma region formed by the electromagnets is changed, and the target is sputtered in a plurality of times, and the target is sputtered on the substrate. TiN forming Ti thin film
In the N thin film forming method, first, in each case of forming a plurality of plasma regions having different diameters, a ratio between a current flowing through the annular inner coil and a current flowing through the annular outer coil is obtained, and the ratio is determined by the ratio. Then, without changing the ratio, reduce the value of the current flowing through each of the coils, weaken the magnetic field strength, and change the conditions for lowering the specific resistance and the applied sputtering power. ,
Conditions for lowering the specific resistance were obtained, and then, from these conditions, the ratio, current value, and sputtering power in each case of forming a plurality of plasma regions having different diameters were determined. Finally, in the case where the film thickness is divided into a plurality of times in a plurality of plasma regions having different diameters, the film thickness distribution is determined in the plasma regions having different sizes so that the integrated film thickness distribution becomes the flattest. Is characterized in that a thin film is formed on a substrate after calculating the ratio of the film formation time. According to the present invention, a film thickness distribution is obtained from the condition that the specific resistance becomes low as described above, a ratio at which the film thickness distribution becomes the flattest is calculated, and then a thin film is formed on the substrate. Therefore, the TiN thin film formed on the substrate can have a uniform resistivity distribution and a uniform film thickness distribution. DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below.
FIG. 1 shows an apparatus used in a method according to an embodiment of the present invention. In FIG. 1, a substrate 2 and a target 3 are disposed in a vacuum chamber (not shown) so as to face each other.
An electromagnet 10 is provided behind the device. The electromagnet 10 includes an annular inner coil 10a and an annular outer coil 10b disposed therearound.
By changing the current flowing through 0a and 10b,
The annular plasma generation region 11 moves. The annular plasma is generated concentrically with respect to the center of the target 3, and the diameter of a circle passing through the center of the annular plasma is determined by the ratio of the current flowing through the inner coil 10a and the outer coil 10b, as shown in FIG. Become. By changing the plasma diameter obtained in FIG.
When a film is formed at a sputtering power of 6 KW (constant), the specific resistance value becomes as shown in FIG. At this time, the pressure is 2.9 × 10 −1 P
a, Introducing gas amount: N 2 ; 20 sccm, Ar: 20 sc
cm, the distance between the substrate 2 and the target 3 is 60 mm. FIGS. 4 to 7 are graphs showing the dependence of the specific resistance on the sputtering power when the conditions such as the introduced gas ratio and the pressure are changed. FIG. 4 shows that 2.2 amps flow through the inner coil 10a and 10.0 amps flow through the outer coil 10b,
In the graph when the plasma diameter is 105 mm and the introduced gas ratio is 50%, the specific resistance decreases as the sputtering power is increased. FIG. 5 shows that 2.2 amps flow through the inner coil 10a and 10.0 amps flow through the outer coil 10b,
In the graph when the introduced gas ratio is set to 80%, the specific resistance becomes minimum when the sputtering power is set to 4 KW. FIG. 6 shows 10.0 amps for the inner coil 10a and 10b for the outer coil 10b.
Through -2.0 amps, plasma diameter 202 mm,
In the graph when the introduced gas ratio is set to 50%, the specific resistance decreases up to a sputtering power of 6 KW, but increases at a sputtering power of 8 KW. The reason is that Ti and N 2
This is because N 2 is deficient in the reaction with. FIG.
Is 10.0 amps for the inner coil 10a and 1 for the outer coil
In the graph when -2.0 amperes are passed through 0b and the introduced gas ratio is 80%, the specific resistance decreases as the sputtering power decreases. Since a TiN thin film is required to have a low resistance, if the condition for reducing the resistance is selected when the plasma diameter is 105 mm (FIGS. 4 and 5) and when the plasma diameter is 202 mm (FIGS. 6 and 7), The resistivity distribution on the substrate 2 becomes uniform,
The specific resistance value also decreases. The plasma diameter is determined by the ratio of the current of the inner coil 10a to the current of the outer coil 10b as shown in FIG. 2. If the current value is reduced without changing this ratio, the plasma diameter is reduced. The magnetic field strength can be reduced without changing. FIG. 8 shows the in-plane distribution of the resistivity when the plasma diameter is 202 mm, the current ratio between the inner coil 10a and the outer coil 10b is the same, and the current value is reduced. When the current value is reduced, the resistivity decreases. . As described above, as a condition of low resistance, when the plasma diameter is 105 mm, the current 2.2 of the inner coil 10a is 2.2.
Amps, current of the outer coil 10b 10.0 amps,
A sputtering power of 4 KW can be selected. When the plasma diameter is 202 mm, the current of the inner coil 10a is 3.0 amps, the current of the outer coil 10b is -0.6 amps, and the sputtering power is 12 KW. FIG. 9 shows the film thickness distribution under these two conditions. In FIG. 9, when the two curves are combined at a certain ratio, a film thickness distribution on the substrate 2 is obtained. At this time, after the ratio at which the film thickness distribution becomes the flattest is obtained by calculation, the film is actually formed. The result is shown in FIG.
In FIG. 11 and FIG. 11, the ratio between the two curves is 3:14.
It is. With this method, a film thickness distribution of ± 2.81% and a specific resistance distribution of ± 4.48% are obtained. According to the present invention, the film thickness distribution is obtained from the condition that the specific resistance becomes low as described above, and the ratio at which the film thickness distribution becomes the flattest is calculated. Since the TiN thin film is formed on the substrate, a uniform resistivity distribution and a uniform film thickness distribution can be obtained.
【図面の簡単な説明】
【図１】この発明の実施例の方法に用いられる装置を示
す説明図
【図２】この発明の実施例の方法における環状のプラズ
マの中心を通る円の直径を示すグラフ
【図３】この発明の実施例の方法における比抵抗値を示
すグラフ
【図４】この発明の実施例の方法における導入ガス比、
圧力等の条件を変えたときの比抵抗のスパッタ電力に対
する依存性を示したグラフ
【図５】この発明の実施例の方法における導入ガス比、
圧力等の条件を変えたときの比抵抗のスパッタ電力に対
する依存性を示したグラフ
【図６】この発明の実施例の方法における導入ガス比、
圧力等の条件を変えたときの比抵抗のスパッタ電力に対
する依存性を示したグラフ
【図７】この発明の実施例の方法における導入ガス比、
圧力等の条件を変えたときの比抵抗のスパッタ電力に対
する依存性を示したグラフ
【図８】この発明の実施例の方法における比抵抗の面内
分布を示したグラフ
【図９】この発明の実施例の方法における膜厚分布を示
したグラフ
【図１０】この発明の実施例の方法における膜厚分布を
示したグラフ
【図１１】この発明の実施例の方法における比抵抗分布
を示したグラフ
【図１２】従来のＴｉＮ薄膜形成方法に用いられるマグ
ネトロンスパッタリング装置を示す説明図
【符号の説明】
１・・・・・・・真空槽
２・・・・・・・基板
３・・・・・・・ターゲット
４・・・・・・・コイル
５・・・・・・・マグネットコイル電源
６・・・・・・・スパッタ電源
７・・・・・・・スパッタガス供給口
８・・・・・・・真空排気口
１０・・・・・・電磁石
１０ａ・・・・・内側コイル
１０ｂ・・・・・外側コイルBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an explanatory view showing an apparatus used in a method according to an embodiment of the present invention. FIG. 2 shows a diameter of a circle passing through the center of an annular plasma in the method according to an embodiment of the present invention. FIG. 3 is a graph showing a specific resistance value in the method according to the embodiment of the present invention.
FIG. 5 is a graph showing the dependency of specific resistance on sputtering power when conditions such as pressure are changed. FIG.
FIG. 6 is a graph showing the dependency of specific resistance on sputtering power when conditions such as pressure are changed. FIG.
FIG. 7 is a graph showing the dependence of specific resistance on sputtering power when conditions such as pressure are changed. FIG.
FIG. 8 is a graph showing the dependency of specific resistance on sputtering power when conditions such as pressure are changed. FIG. 8 is a graph showing in-plane distribution of specific resistance in the method according to the embodiment of the present invention. FIG. 10 is a graph showing the film thickness distribution in the method of the embodiment. FIG. 10 is a graph showing the film thickness distribution in the method of the embodiment of the present invention. FIG. 11 is a graph showing the resistivity distribution in the method of the embodiment of the present invention. FIG. 12 is an explanatory view showing a magnetron sputtering apparatus used in a conventional TiN thin film forming method. [Description of References] 1... Vacuum chamber 2. ... Target 4... Coil 5... Magnet coil power supply 6... Sputter power supply 7. ... Vacuum exhaust port 10 ... Electromagnet ... Inner coil 10b... Outer coil
───────────────────────────────────────────────────── フロントページの続き (72)発明者 児玉 哲郎 神奈川県茅ヶ崎市萩園2500番地日本真空 技術株式会社内 (56)参考文献 特開 平６−340972（ＪＰ，Ａ) 特開 平５−263236（ＪＰ，Ａ) 特開 平５−51735（ＪＰ，Ａ) 特開 昭58−87270（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C23C 14/00 - 14/58 ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Tetsuro Kodama 2500 Hagizono, Chigasaki City, Kanagawa Prefecture, Japan Vacuum Engineering Co., Ltd. (56) References JP-A-6-340972 (JP, A) JP-A-5-263236 ( JP, A) JP-A-5-51735 (JP, A) JP-A-58-87270 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 14/00-14/58
Claims (1)
ットの背後に、環状の内側コイルとその周囲に配置され
た環状の外側コイルとで構成された電磁石を設け、それ
らの電磁石によって形成される環状のプラズマ領域の直
径を変えて、複数回に分けて、ターゲットをスパッタし
て、基板にＴｉＮ 薄膜を形成するＴｉＮ薄膜形成方法
において、最初、複数の異なる直径のプラズマ領域を形
成させるそれぞれの場合の、環状の内側コイルに流す電
流と、環状の外側コイルに流す電流との比率を求め、前
記比率によって決定される環状のプラズマの直径を求
め、次に、前記比率を変えないで、前記各コイルに流す
電流値を下げ、磁界強度を弱めて、比抵抗が低くなる条
件と、投入するスパッタ電力を変化させ、比抵抗が低く
なる条件とを求め、その次に、これらの条件から、複数
の異なる直径のプラズマ領域を形成させるそれぞれの場
合の、前期比率、電流値、スパッタ電力を決定して、そ
れらの場合の成膜速度分布を求め、最後に、複数の異な
る直径のプラズマ領域で複数回に分けて成膜した場合
に、積算した膜厚分布が最も平坦になるように、異なる
大きさのプラズマ領域での成膜時間の比率を算出してか
ら、そのとおりに基板上に薄膜を形成することを特徴と
するＴｉＮ 薄膜形成方法。(57) [Claim 1] An annular inner coil and an annular outer coil arranged around the target behind a target disposed in the vacuum chamber so as to face the substrate. the electromagnet is provided, it
Of the annular plasma region formed by these electromagnets
A TiN thin film forming method for forming a TiN thin film on a substrate by sputtering a target in a plurality of times with different diameters
Shape In the first, the plasma region of a plurality of different diameters
In each case which made the current supplied to the annular inner coil, the ratio of the current flowing in the annular outer coil determined, before
Find the diameter of the annular plasma determined by the ratio
Because, then, without changing the ratio, the lower the value of the current flowing in each coil, weakens the magnetic field strength, and conditions specific resistance becomes lower, by changing the sputtering power to be turned on, the resistivity decreases conditions And then, from these conditions ,
Fields that form plasma regions of different diameters
Of the previous period, current value, and sputtering power
The deposition rate distribution in these cases was determined, and finally, several different
When the film is divided into several times in the plasma region with different diameter
To make the integrated film thickness distribution the flattest
Calculate the ratio of the deposition time in the plasma region of the size
Al, TiN thin film forming method comprising forming a thin film on a substrate in the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11770993A JP3466227B2 (en) | 1993-04-20 | 1993-04-20 | Method for forming TiN thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11770993A JP3466227B2 (en) | 1993-04-20 | 1993-04-20 | Method for forming TiN thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06306605A JPH06306605A (en) | 1994-11-01 |
| JP3466227B2 true JP3466227B2 (en) | 2003-11-10 |
Family
ID=14718372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11770993A Expired - Lifetime JP3466227B2 (en) | 1993-04-20 | 1993-04-20 | Method for forming TiN thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3466227B2 (en) |
-
1993
- 1993-04-20 JP JP11770993A patent/JP3466227B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06306605A (en) | 1994-11-01 |
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