JP3445266B2 - Adhesive film for semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a bonding film for semiconductor which has sufficient bonding force for a lead frame, can be peeled easily after resin sealing and also has various characteristics required for application into semiconductor. SOLUTION: A bonding film for semiconductor is used in the method that the lead frame is protected by attaching a bonding film to the rear surface thereof and it is easily removed after the sealing process. A resin layer A is formed to single surface or both surfaces of the support film. This support film is a bonding film for semiconductor having the line expansion coefficient under 20 to 200 deg.C of 3.0&times;10<-5> / deg.C or less.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive film for a semiconductor, which can be easily peeled off from a lead frame and a sealing resin, so that a semiconductor package can be manufactured with high workability.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor package, a semiconductor element is bonded onto a die pad with an adhesive such as silver paste.
A package having a structure in which this and a lead frame are joined with a wire and then the whole is sealed while leaving an outer lead for external connection has been used. However, in recent years, packages having various structures have been developed in response to the demands for higher density, smaller area, and thinner semiconductor packages. Among them, for example, there are LOC (lead on chip) and COL (chip on lead) structures, but there are problems in terms of reduction in area and thickness. On the other hand, in order to solve these problems, a package having a structure in which only one surface (semiconductor element side) of the package is sealed and the exposed lead frame on the back surface is used for external connection has been developed. Since the lead frame does not protrude from the encapsulation resin in the package having this structure, the area and the thickness can be reduced, but problems such as the encapsulation resin wrapping around the back surface of the lead frame during the encapsulation are likely to occur. The present inventors have found that the above problems can be prevented by first attaching an adhesive film to the back surface of the lead frame to protect it and then peeling it off after sealing. However, the adhesive film used in this case needs to have a sufficient adhesive force with respect to the lead frame, and needs to be easily peeled off by heating after sealing with the resin. There has been no adhesive film for a semiconductor that satisfies such contradictory characteristics.

[0003]

SUMMARY OF THE INVENTION The present invention is a semiconductor which has sufficient adhesive force to a lead frame, can be easily peeled off after resin encapsulation, and has various characteristics required for semiconductor applications. It is an object of the present invention to provide an adhesive film for use, a lead frame using the same, and a semiconductor device. Another object of the present invention is to provide a semiconductor device manufacturing method capable of manufacturing a semiconductor device having a high density, a small area, and a thin thickness with excellent productivity.

[0004]

That is, the present invention relates to the following (1) to (11). (1) An adhesive film for a semiconductor used in a method of attaching an adhesive film to a back surface of a lead frame for protection, and peeling after sealing, wherein a resin layer A is formed on one side or both sides of a support film, The supporting film is 2
The linear thermal expansion coefficient at 0 to 200 ° C. is 3.0 × 10 ⁻⁵
Adhesive film for semiconductor having a temperature of / ° C or lower. (2) An adhesive film for a semiconductor used in a method of attaching an adhesive film to a back surface of a lead frame for protection, and peeling off after sealing, wherein a resin layer A is formed on one side or both sides of a support film, The supporting film is 2
An adhesive film for a semiconductor, which has a heat shrinkage of 0.15% or less when heated at 00 ° C. for 2 hours.

(3) An adhesive film for semiconductors used in a method of attaching and protecting an adhesive film on the back surface of a lead frame and peeling it off after sealing, in which a resin layer A is formed on one side or both sides of a support film. The supporting film is a surface-treated adhesive film for semiconductors. (4) The adhesive film for a semiconductor according to the above (3), wherein the surface treatment is selected from the group consisting of chemical treatment, sand mat treatment, plasma treatment and corona treatment. (5) The adhesive film for a semiconductor as described in (3) above, wherein the surface treatment is an alkali treatment or a silane coupling treatment.

(6) An adhesive film for semiconductors used in a method of attaching an adhesive film to the back surface of a lead frame for protection, and peeling after sealing. A resin layer A is formed on one side or both sides of a support film. The ratio (A / B) between the thickness (A) of the resin layer A and the thickness (B) of the supporting film is 0.
An adhesive film for a semiconductor, which is 5 or less. (7) The adhesive film for a semiconductor according to any one of (1) to (6) above, wherein the support film has a thickness of 5 μm or more and 50 μm or less.

(8) The adhesive film for a semiconductor according to any one of (1) to (7) above, wherein the glass transition temperature of the support film is 200 ° C. or higher. (9) The material of the supporting film is aromatic polyimide, aromatic polyamide-imide, aromatic polyether sulfone,
The adhesive film for a semiconductor according to any one of the above (1) to (8), which is selected from the group consisting of polyphenylene sulfide, aromatic polyether ketone, polyarylate, aromatic polyether ether ketone and polyethylene naphthalate. (10) The material of the supporting film is copper, aluminum,
The adhesive film for a semiconductor according to any one of (1) to (7) above, which is selected from the group consisting of stainless steel and nickel.

(11) The 90 ° peel strength at 25 ° C. between the resin layer A and the lead frame after bonding the semiconductor adhesive film to the lead frame is 5 N / m or more, and the semiconductor adhesive film is bonded. The 90 degree peel strength of at least one point in the temperature range of 0 to 250 ° C. between the resin layer A after sealing the lead frame with the sealing material, the lead frame and the sealing material is 1000 N / m.
The adhesive film for a semiconductor according to any one of the above (1) to (10), which is as follows.

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the adhesive film for a semiconductor, the lead frame and the semiconductor device using the same and the method for manufacturing the semiconductor device according to the present invention will be described in detail below.

Adhesive Film for Semiconductors The adhesive film for semiconductors of the present invention can be suitably used, for example, in a method of manufacturing a semiconductor device. When the adhesive film for a semiconductor of the present invention is used in a method for manufacturing a semiconductor device, it is preferable to manufacture the semiconductor device by a method including the following steps. That is, (1) a step of adhering the adhesive film for a semiconductor of the present invention to the lead frame at 150 to 400 ° C., (2) adhering the semiconductor element to the die pad of the lead frame using an adhesive such as silver paste, A step of curing an adhesive such as a silver paste by heating at 200 ° C. for 30 minutes to 2 hours, (3) heating at 200 to 270 ° C. for 3 minutes to 30 minutes,
A step of wire-bonding a gold wire or the like to the inner lead of the lead frame and the semiconductor element, (4) sealing with a sealing material at 150 to 200 ° C, (5) 4 to 6 at 150 to 200 ° C
It is a step of curing the encapsulant resin by heating for a time, and (6) a step of peeling the adhesive film for a semiconductor from the lead frame and the encapsulant at 0 to 250 ° C. When the lead frame is composed of a plurality of patterns each having a die pad and an inner lead, it is divided into a plurality of semiconductor devices each having one semiconductor element, if necessary.

In the present invention, the resin layer A at 25 ° C.
90 degree peel strength between the lead frame and the lead frame is JIS Z 0237
According to the 90-degree peeling method, the adhesive film for a semiconductor is peeled off in a 90-degree direction from the lead frame and measured. Specifically, at 25 ° C., 270 to 3 per minute
When peeling the adhesive film for a semiconductor at a speed of 30 mm, preferably 300 mm per minute, the 90 degree peel strength is 9
It is measured by a 0 degree peeling tester (made by Tester Sangyo). In the present invention, the 90 degree peel strength between the resin layer A and the lead frame at 25 ° C. is set to 5 N / m or more and 10 N / m.
The above is preferable, 50 N / m or more is more preferable, 10
0 N / m or more is more preferable, and 150 N / m or more is particularly preferable. If the 90 degree peel strength is less than 5 N / m,
In a conveying process after the adhesive film for a semiconductor is attached to the lead frame, the adhesive film for a semiconductor is easily peeled off from the lead frame, and during the sealing process, a sealing resin enters between the lead frame and the resin layer A. There's a problem. The 90-degree peel strength is preferably 2000 N / m or less, more preferably 1500 N / m or less, and even more preferably 1000 N / m or less.

There are no particular restrictions on the conditions for adhering the semiconductor adhesive film and the lead frame in order to measure the peel strength, but they may be adhered under the adhering conditions in the lead frame manufacturing method of the present invention described later. preferable. For example, as a lead frame, a copper lead frame coated with palladium or a 42 alloy lead frame is used, and (1) temperature 250 ° C., pressure 8 MPa, time 10
Seconds, (2) temperature 350 ° C., pressure 3 MPa, time 3 seconds, or
(3) Bonding is performed under the bonding conditions of temperature 280 ° C., pressure 6 MPa, time 10 seconds.

In the present invention, particularly, the resin layer A and the lead frame 90 at 25 ° C. immediately before the sealing step are performed.
The peel strength is preferably in the above range (that is, 5 N / m or more, preferably 10 N / m or more, more preferably 50 N / m or more). 90 just before the sealing process
When the peel strength is less than 5 N / m, a problem such as encapsulation resin entering between the lead frame and the resin layer A occurs during the encapsulation process. Further, in the above, "immediately before performing the sealing step" means a state in which all the steps performed before the sealing step and before the sealing step are completed.

Further, in the above, after adhering the adhesive film for a semiconductor to the lead frame and before performing the sealing step,
By heating, it is also possible to improve the adhesive strength between the resin layer A and the lead frame. The heating temperature is not particularly limited, but it is preferable to heat at 100 ° C. or higher in order to improve the adhesive strength between the resin layer A and the lead frame. Further, from the viewpoint of heat resistance of the lead frame and the adhesive film for semiconductor, it is preferable to heat at 300 ° C. or lower. For the same reason, heating to 130 ° C. or higher and 270 ° C. or lower is more preferable. The heating time is not particularly limited, but is preferably 10 seconds or more in order to sufficiently improve the adhesive strength between the resin layer A and the lead frame. For the same reason, the heating time is more preferably 1 minute or more and 2 hours or less.

From the viewpoint of productivity, it is preferable that the above heating step is performed by heating in various steps (for example, curing step of an adhesive such as silver paste, wire bonding step) before moving to the sealing step. For example, as described above, in the step of adhering semiconductor elements, heating is usually performed at 140 to 200 ° C. for 30 minutes to 2 hours in order to cure the adhesive used for adhering. Also, in the wire bonding process, it is usually 20
Heating is performed at 0 ° C. to 270 ° C. for about 3 minutes to 30 minutes. Therefore, the above heating step can be performed by heating in these various steps.

In the present invention, 0 after sealing with the sealing material
The 90 degree peel strength between the resin layer A and the lead frame and the sealing material at at least one point in the temperature range of up to 250 ° C. is the room temperature of the lead frame and the adhesive film at room temperature according to the 90 degree peeling method of JIS Z 0237. Alternatively, in an oven at 0 to 250 ° C., the adhesive film is peeled off in 90 degrees from the lead frame and measured. Specifically, 0
2 per minute at least at one point in the temperature range of 250 ° C
The 90 degree peel strength when peeling off the adhesive film for a semiconductor at a speed of 70 to 330 mm, preferably 300 mm per minute is measured by Tensilon RTM-100 (manufactured by Orientec). The preferred range of the peel strength measurement temperature is 100 to 250 ° C, and more preferably 150 to 25 ° C.
It is 0 ° C.

The 90 degree peel strength between the resin layer A, the lead frame and the sealing material is 100 at least at one point in the temperature range of 0 to 250 ° C. after sealing with the sealing material.
0 N / m or less, preferably 800 N / m or less, 5
It is more preferably 00 N / m or less. If the 90-degree peel strength exceeds 1000 N / m, there is a problem that stress is applied to the lead frame and the sealing material, and the lead frame and the sealing material are damaged. Note that the 90-degree peel strength usually decreases as the measurement temperature increases. The 90-degree peel strength is preferably 0 N / m or more, more preferably 3 N / m or more, and even more preferably 5 N / m or more.

In the present invention, the resin layer A at a temperature at which the semiconductor adhesive film is peeled from the lead frame and the sealing material after the lead frame to which the semiconductor adhesive film is bonded is sealed with the sealing material. 90 degree peel strength with lead frame and sealing material is 100
It is preferably 0 N / m or less. After sealing with a sealing material, the temperature for peeling off the adhesive film for a semiconductor is usually
It is preferably between 0 and 250 ° C. The sealing condition by the sealing material for measuring the 90-degree peel strength at least at one point in the temperature range of 0 to 250 ° C. is not particularly limited, but the sealing condition in the method for manufacturing a semiconductor device of the present invention described later is not limited. It is preferable to seal under stopping conditions. For example,
CEL-9200 (trade name, biphenyl sealing material manufactured by Hitachi Chemical Co., Ltd.) was used as the sealing material, and sealing was performed under the conditions of a temperature of 180 ° C., a pressure of 10 MPa, and a time of 3 minutes, and then 1
It is preferable to heat the sealing material at 80 ° C. for 5 hours to cure the sealing material.

In the present invention, the adhesive film for a semiconductor may be composed of a single resin layer A, or may be one in which at least the resin layer A is formed on a support film. Examples of the latter are those in which the resin layer A is formed on one side or both sides of the support film, and those in which the resin layer A is formed on one side of the support film and another resin layer is formed on the opposite side. Can be mentioned. Those having a supporting film are preferable.

In the present invention, the method of forming the resin layer A on the support film is not particularly limited, but the resin (a) used for forming the resin layer A is N-methyl-2-pyrrolidone or dimethylacetamide. , Diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, adhesive varnish prepared by dissolving in a solvent such as dimethylformamide, after coating on one or both sides of the support film, by heat treatment to remove the solvent, An adhesive film having a two-layer structure or a three-layer structure can be obtained. Alternatively, a precursor varnish obtained by dissolving a precursor (for example, polyamic acid) of a resin (a) to be a heat-resistant resin (a) (for example, a polyimide resin) in a solvent after applying varnish on a single surface or both surfaces of a support film. After being applied to the above, the adhesive film having a two-layer structure or a three-layer structure can be obtained by heat treatment. in this case,
The solvent is removed by heat treatment after coating, and the precursor is the resin (a) (for example, imidization). From the viewpoint of the surface condition of the coated surface, it is preferable to use an adhesive varnish.

In the above, the treatment temperature when the support film coated with varnish is subjected to heat treatment for removing the solvent, imidization, etc. differs depending on whether it is an adhesive varnish or a precursor varnish. In the case of an adhesive varnish, the temperature may be any temperature at which the solvent can be removed. In the case of a precursor varnish, a treatment temperature equal to or higher than the glass transition temperature of the resin layer A is preferable for imidization. In the above, the coating method of the adhesive varnish or precursor varnish applied to one surface of the support film is not particularly limited, for example, roll coat, reverse roll coat, gravure coat, bar coat, comma coat and the like. Can be done using. Alternatively, a support film may be passed through the adhesive varnish or precursor varnish for coating.

In the present invention, the glass transition temperature of the resin layer A is preferably 100 to 300 ° C., 150
-300 degreeC is more preferable, and it is 150-250.
It is particularly preferable that the temperature is ° C. Glass transition temperature is 100
When the temperature is lower than 0 ° C., when peeled from the lead frame and the sealing material, peeling may occur at the interface between the resin layer A and the support film, or the resin layer A tends to be cohesively broken. In addition, the resin easily remains on the lead frame and the sealing material,
The resin layer A is softened by the heat in the wire bonding process, so that a defective wire bonding tends to occur. Further, the resin layer A is softened by the heat in the sealing step, and a defect such as a sealing material entering between the lead frame and the resin layer A tends to occur. If the glass transition temperature exceeds 300 ° C, the resin layer A will not be sufficiently softened at the time of adhesion and
The 90 degree peel strength with the lead frame tends to decrease.

In the present invention, the temperature at which the resin layer A is reduced by 5% by weight is preferably 300 ° C. or higher.
The temperature is more preferably 0 ° C or higher, further preferably 400 ° C or higher. If the temperature at which the resin layer A decreases by 5% by weight is less than 300 ° C, outgas is generated due to the heat when the adhesive film is bonded to the lead frame and the heat in the wire bonding process, and the lead frame and the wires tend to be easily contaminated. There is. The temperature at which the resin layer A decreases by 5% by weight is determined by a differential thermal balance (Seiko Denshi Kogyo TG / DTA2
20), and the temperature was raised at a rate of 10 ° C./min.

In the present invention, the elastic modulus of the resin layer A at 230 ° C. is preferably 1 MPa or more, and 3
It is more preferably at least MPa. The wire bond temperature is not particularly limited, but is generally about 200 to 260 ° C., and about 230 ° C. is widely used. Therefore, when the elastic modulus at 230 ° C. is less than 1 MPa, the resin layer A is softened by the heat in the wire bonding step, and a wire bonding defect is likely to occur. The preferable upper limit of the elastic modulus of the resin layer A at 230 ° C. is 2000 MPa, more preferably 1500 MPa, and further preferably 1 MPa.
It is 000 MPa. The elastic modulus at 230 ° C. of the resin layer A is measured by a dynamic viscoelasticity measuring device, DVE RHEOSPEC.
Using TOLER (manufactured by Rheology Co., Ltd.), heating rate 2 ° C /
Min, measured in tension mode with a measurement frequency of 10 Hz.

In the present invention, it is used to form the resin layer A.
The resin (a) is an amide group (-NHCO-),
Ter group (-CO-O-), imide group (-NR₂, However
R is -CO-), ether group (-O-)
Or sulfone group (-SO ₂-) Thermoplastic resin having
Preferably there is. In particular, amide groups, ester groups,
Being a thermoplastic resin having a mid group or an ether group
Is preferred. Specifically, aromatic polyamide, aromatic
Reester, aromatic polyimide, aromatic polyamide
, Aromatic polyether, aromatic polyether amide
Mido, aromatic polyether amide, aromatic polyester
Examples thereof include imide and aromatic polyether imide.
Among these, aromatic polyether amide imides and aromatic
Aromatic polyether imide and aromatic polyether amide
Are preferable in terms of heat resistance and adhesiveness.

Each of the above resins is obtained by polycondensing an aromatic diamine or bisphenol as a base component with a dicarboxylic acid, a tricarboxylic acid, a tetracarboxylic acid or an aromatic chloride as an acid component or a reactive derivative thereof. Can be manufactured. That is, it can be carried out by a known method used for the reaction between an amine and an acid, and there are no particular restrictions on various conditions. Aromatic dicarboxylic acid,
A publicly known method is used for the polycondensation reaction of the aromatic tricarboxylic acid or the reactive derivative thereof and the diamine.

Examples of the base component used in the synthesis of aromatic polyether imide, aromatic polyether amide imide or aromatic polyether amide include, for example, 2,2-bis [4- (4-aminophenoxy) phenyl] propane. , Bis [4- (4-aminophenoxy) phenyl] sulfone, 4,4'-diaminodiphenyl ether, bis
[4- (4-aminophenoxy) phenyl] ether,
Aromatic diamine having an ether group such as 2,2-bis [4- (4-aminophenoxy)] hexafluoropropane; Aroma not having an ether group such as 4,4′-methylenebis (2,6-diisopropylamine) Group diamines;
Siloxane diamines such as 1,3-bis (3-aminopropyl) -tetramethyldisiloxane; and α, ω such as 1,12-diaminododecane and 1,6-diaminohexane
-Diaminoalkanes are preferably used. In the total amount of the base component, 40 to 40% of the aromatic diamine having an ether group is used.
100 mol%, preferably 50-97 mol%, 0-60 mol%, preferably 3-50 mol% of at least one selected from aromatic diamines having no ether group, siloxane diamines and α, ω-diaminoalkanes. It is desirable to use the amount of. Specific examples of preferable base components include (1) aromatic diamines 60 to 8 having an ether group.
9 mol%, preferably 68 to 82 mol%, siloxane diamine 1 to 10 mol%, preferably 3 to 7 mol%, and α, ω-diaminoalkane 10 to 30 mol%, preferably 15 to 25 mol%. A base component, (2) an ether group-containing aromatic diamine 90 to 99 mol%, preferably 93 to 97 mol%, and a siloxane diamine 1 to 10.
A base component consisting of mol%, preferably 3 to 7 mol%,
(3) 40 to 70 mol% of aromatic diamine having an ether group, preferably 45 to 60 mol%, 30 to 60 mol% of aromatic diamine having no ether group, preferably 40
Included is a base component consisting of ˜55 mol%.

Examples of the acid component used in the synthesis of aromatic polyether imide, aromatic polyether amide imide or aromatic polyether amide include (A) trimellitic anhydride, trimellitic anhydride chloride and the like. Reactive derivatives of mellitic acid, mononuclear aromatic tricarboxylic acid anhydrides such as pyromellitic dianhydride or mononuclear aromatic tetracarboxylic acid dianhydrides, (B) bisphenol A bis trimellitate dianhydride, oxydiphthalic anhydride And aromatic dicarboxylic acids such as (C) terephthalic acid, isophthalic acid, terephthalic acid chloride, isophthalic acid chloride and other reactive derivatives of phthalic acid. Among them, the acid component (A) per mole of the base component (1) or (2)
0.95 to 1.05 mol, preferably 0.98 to 1.0
Aromatic polyether amide imide obtained by reacting 2 moles, and 0.95 to 1.05 moles, preferably 0.
An aromatic polyether imide obtained by reacting 98 to 1.02 mol is preferably used.

In the present invention, a filler such as ceramic powder, glass powder, silver powder, copper powder, resin particles or rubber particles, or a coupling agent may be added to the resin (a). When the filler is added, the addition amount is preferably 1 to 30 parts by weight, more preferably 5 to 15 parts by weight, based on 100 parts by weight of the resin (a).

As the coupling agent, vinyl silane,
Coupling agents such as epoxysilane, aminosilane, mercaptosilane, titanate, aluminum chelate and zircoaluminate can be used, but silane coupling agents are preferred. As the silane coupling agent, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ
-Glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, N-β-
(Aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, N
-Phenyl-γ-aminopropyltrimethoxysilane,
A silane coupling agent having an organic reactive group at the terminal such as γ-mercaptopropyltrimethoxysilane. Of these, an epoxy silane coupling agent having an epoxy group is preferably used. Here, the organic reactive group is a functional group such as an epoxy group, a vinyl group, an amino group, and a mercapto group. The addition of the silane coupling agent improves the adhesion of the resin to the support film, and the addition of 100 to 3
This is because peeling is less likely to occur at the interface between the resin layer and the support film when peeled off at a temperature of 00 ° C. The amount of the coupling agent added is 100 parts by weight of the resin (a),
1 to 15 parts by weight is preferable, and 2 to 10 parts by weight is more preferable.

In the present invention, the support film is not particularly limited, but a film made of a resin that can withstand heat during resin coating, drying and semiconductor device assembling steps is preferable,
The resin is composed of aromatic polyimide, aromatic polyamide, aromatic polyamideimide, aromatic polysulfone, aromatic polyether sulfone, polyphenylene sulfide, aromatic polyether ketone, polyarylate, aromatic polyether ether ketone and polyethylene naphthalate. It is preferably selected from the group. Also. The glass transition temperature of the supporting film is 200 to improve heat resistance.
C. or higher is preferable, and 250.degree. C. or higher is more preferable. By using the above heat-resistant resin film, the supporting film does not soften in the steps to which heat is applied such as the bonding step, the wire bonding step, the sealing step, and the peeling step, and the work can be performed efficiently.

The above support film preferably has sufficiently high adhesion to the resin layer A. 1 if adhesion is low
When peeled off from the lead frame and the sealing material at a temperature of 00 to 300 ° C., peeling easily occurs at the interface between the resin layer A and the supporting film, and the resin is likely to remain on the lead frame and the sealing material. Since it is preferable that the support film has heat resistance and sufficiently high adhesion to the resin layer A,
A polyimide film is more preferable.

The type of the polyimide film is not particularly limited, but the linear thermal expansion coefficient at 20 to 200 ° C. is 3.0 in order to reduce the warp of the lead frame after the adhesive film for a semiconductor is attached to the lead frame. × 1
It is preferably 0 ⁻⁵ / ° C. or lower, and 2.5 × 10 ⁻⁵ /
More preferably below ℃, 2.0 × 10 ^-5 / ℃
The following is more preferable. Further, in order to reduce the warp of the lead frame after the adhesive film for a semiconductor is attached to the lead frame, the heat shrinkage rate when heated at 200 ° C. for 2 hours is preferably 0.15% or less, It is more preferably 1% or less, and 0.0
It is particularly preferably 5% or less.

The surface of the above-mentioned support film is preferably treated in order to sufficiently enhance the adhesion to the resin layer A. The surface treatment method of the support film is not particularly limited, but alkali treatment, chemical treatment such as silane coupling treatment, physical treatment such as sand mat treatment, plasma treatment,
Examples include corona treatment. The thickness of the support film is not particularly limited, but is preferably 100 μm or less in order to reduce warpage of the lead frame after the adhesive film for a semiconductor is attached to the lead frame, and 50
It is more preferably not more than μm, still more preferably not more than 25 μm. The thickness of the support film is preferably 5 μm or more, more preferably 10 μm or more.

Further, the material of the supporting film can be selected from the group consisting of copper, aluminum, stainless steel and nickel other than the above-mentioned resins. By using the above-mentioned metal for the support film, the linear expansion coefficient of the lead frame and the support film can be made close to each other, and the warp of the lead frame after the adhesive film for a semiconductor is attached to the lead frame can be reduced.

The adhesive film for a semiconductor according to the present invention has the thickness (A) of the resin layer when the resin layer is provided on one side or both sides of the support film, particularly when the resin layer A is provided on one side of the support film. , The ratio (A / B) to the thickness (B) of the supporting film is 0.
It is preferably 5 or less, more preferably 0.3 or less, and further preferably 0.2 or less. Resin layer thickness (A)
When the ratio (A / B) to the thickness of the supporting film (B) exceeds 0.5, the film tends to curl due to the volume reduction of the resin layer when the solvent is removed after coating, and it adheres to the lead frame. There is a tendency that workability and productivity when doing are likely to decrease. When resin layers are provided on both sides of the support film, the thickness ratio of both resin layers is preferably 0.8: 1 to 1.2: 1, and 0.9: 1 to 1.1: 1. Is more preferable, and 1: 1 is particularly preferable. The resin layer A
The thickness (A) is preferably 1 to 20 μm and 3 to
The thickness is more preferably 15 μm, further preferably 4 to 10 μm.

The resin layer A may be provided on both sides of the support film in order to offset the curl of the adhesive film for a semiconductor caused by the volume reduction of the resin layer A when the solvent is removed. It is preferable that the resin layer A is provided on one surface of the support film, and the resin layer that is not easily softened at high temperature is provided on the opposite surface. That is, a resin layer A having adhesiveness is formed on one surface of the support film,
It is preferable to form a resin layer B having an elastic modulus at 230 ° C. of 10 MPa or more and having no adhesiveness on the opposite surface. In the present invention, the resin layer B having no adhesiveness 2
The elastic modulus at 30 ° C. is preferably 10 MPa or more, more preferably 100 MPa or more, and 1000 MPa.
The above is more preferable. When the elastic modulus of the resin layer B at 230 ° C. is less than 10 MPa, it tends to be softened in a process such as a wire bonding process to which heat is applied, and tends to stick to a mold or a jig. This elastic modulus is preferably 2000 MPa or less, and more preferably 1500 MPa or less.

The adhesive force of the resin layer B having no adhesiveness to the mold or jig is not particularly limited as long as it does not stick to the mold or jig in the process, but the resin layer B at 25 ° C. 90 degree peel strength between mold and jig is 5N / m
It is preferably less than 1 and more preferably 1 N / m or less. The peel strength is measured, for example, after pressure bonding to a brass mold at a temperature of 250 ° C. and a pressure of 8 MPa for 10 seconds. The elastic modulus at 230 ° C. is 10 MPa
The glass transition temperature of the resin layer B as described above is less likely to be softened in the bonding step, wire bonding step, sealing step, peeling step, etc., and difficult to stick to the mold or jig.
The temperature is preferably 0 ° C. or higher, more preferably 200 ° C. or higher, even more preferably 250 ° C. or higher. The glass transition temperature is preferably 350 or less and 3
It is more preferable that the temperature is 00 ° C. or lower.

The composition of the resin (b) used for forming the resin layer B is not particularly limited, and either a thermoplastic resin or a thermosetting resin can be used. The composition of the thermoplastic resin is not particularly limited, but the same thermoplastic resin having an amide group, an ester group, an imide group or an ether group as the above-mentioned resin is preferable. In particular, 1 mol of the base component (3) and 0.95 to 1.05 of the acid component (A).
Aromatic polyether amide imides obtained by reacting moles, preferably 0.98 to 1.02 moles are preferred.
Further, the composition of the thermosetting resin is not particularly limited, but, for example, an epoxy resin, a phenol resin, a bismaleimide resin (for example, a bismaleimide resin containing bis (4-maleimidophenyl) methane as a monomer) and the like are preferable. . Further, it is also possible to use a combination of a thermoplastic resin and a thermosetting resin. When the thermoplastic resin and the thermosetting resin are combined, the amount of the thermosetting resin is preferably 5 to 100 parts by weight with respect to 100 parts by weight of the thermoplastic resin.
It is more preferable to set the amount to 70 parts by weight.

Further, it is preferable to add a filler or a coupling agent such as ceramic powder, glass powder, silver powder, copper powder, resin particles or rubber particles to the resin (b). When a filler is added, the amount of the filler added is 10
The amount is preferably 1 to 30 parts by weight, more preferably 5 to 15 parts by weight, relative to 0 parts by weight. The addition amount of the coupling agent is preferably 1 to 20 parts by weight, more preferably 5 to 15 parts by weight, based on 100 parts by weight of the resin (b).

The method for forming the resin layer B having no adhesiveness on the support film is not particularly limited,
Usually, a resin varnish prepared by dissolving the resin (b) in a solvent such as N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran, cyclohexanone, methyl ethyl ketone, dimethylformamide is applied on a support film. ,
It can be formed by heat treatment to remove the solvent. Alternatively, a precursor varnish obtained by dissolving a precursor (for example, polyamic acid) of a resin (b) to be a heat resistant resin (b) (for example, a polyimide resin) in a solvent is applied onto a support film by a heat treatment or the like after applying the varnish. After that, it can be formed by heat treatment. In this case, the solvent is removed by a heat treatment after coating to use the precursor as the resin (b) (for example, imidization). From the viewpoint of the surface condition of the coated surface, it is preferable to use a resin varnish.

When the support film coated with the above-mentioned varnish is heat-treated for solvent removal or imidization, the treatment temperature differs depending on whether it is a resin varnish or a precursor varnish. In the case of the resin varnish, the temperature may be any temperature at which the solvent can be removed. In the case of the precursor varnish, the treatment temperature of the glass transition temperature of the resin layer B or higher is preferable for imidization. When a thermosetting resin or a combination of a thermoplastic resin and a thermosetting resin is used as the resin (b), the thermosetting resin is cured by heat treatment after coating, and the resin layer B
The elastic modulus of can be 10 MPa or more. This heat treatment can be performed simultaneously with the removal of the solvent or the imidization, or can be performed separately.

In the resin layer B, the volume of the resin layer B is reduced when the solvent is removed, or the volume of the resin layer A is reduced due to contraction during imidization or curing of the thermosetting resin. Curls can be offset. In the above, the coating method of the resin varnish or precursor varnish of the resin (b) is not particularly limited, but, for example, roll coating,
Reverse roll coat, gravure coat, bar coat,
It is performed using a comma coat or the like. Further, the resin varnish or the precursor varnish may be coated with a support film.

Lead Frame The lead frame of the present invention can be manufactured by, for example, adhering the adhesive film for a semiconductor of the present invention with the resin layer A in contact with one surface of the lead frame. In the present invention, the bonding condition of the adhesive film for a semiconductor to the lead frame is not particularly limited, but the bonding temperature is 150 to 40.
The temperature is preferably between 0 ° C, more preferably 180 to 350 ° C, further preferably 200 to 300 ° C. When the temperature is lower than 150 ° C., the 90 degree peel strength between the lead frame and the resin layer A tends to decrease. Also 400 ℃
If it exceeds, the lead frame tends to deteriorate.

In the present invention, the adhesive pressure of the adhesive film for a semiconductor to the lead frame is preferably 0.5 to 30 MPa, more preferably 1 to 20 MPa, and 3 to 15 MPa.
MPa is more preferable. If the adhesive pressure is less than 0.5 MPa, the 90-degree peel strength between the resin layer A and the lead frame tends to decrease. If it exceeds 30 MPa,
The lead frame tends to be damaged. In the present invention, the adhesion time of the adhesive film for a semiconductor to the lead frame is preferably 0.1 to 60 seconds, more preferably 1 to 30 seconds, even more preferably 3 to 20 seconds. When the adhesion time is less than 0.1 seconds, the resin layer A and the lead frame are
The 0 degree peel strength tends to decrease. If it exceeds 60 seconds, workability and productivity tend to be lowered. Further, it is preferable to perform preheating for about 5 to 60 seconds before applying pressure.

In the present invention, the material of the lead frame is not particularly limited, but, for example, iron alloy such as 42 alloy, or copper or copper alloy can be used. Further, the surface of the lead frame made of copper or a copper-based alloy can be coated with palladium, gold, silver or the like.

Semiconductor Device The structure of a semiconductor device manufactured by using the adhesive film for a semiconductor of the present invention is not particularly limited, but, for example, only one side (semiconductor element side) of the package is sealed, and a bare lead frame on the back side is used. There is a package (Non Lead Type Package) of a structure used for external connection. A specific example of the above package is QFN (QuadFlat Non-leade).
d Package) and SON (Small Outline Non-leaded Pack)
age) and the like.

The semiconductor device of the present invention includes, for example, an adhesive film for a semiconductor, a lead frame adhered to one side of the resin layer A of the adhesive film for a semiconductor, a semiconductor element adhered to a die pad of the lead frame, and a semiconductor element. It is manufactured by peeling the adhesive film for a semiconductor from a semiconductor device with an adhesive film, which has a structure including a wire connecting to an inner lead of a lead frame, a semiconductor element, and a sealing material that seals the wire. A semiconductor device manufactured by using the adhesive film for a semiconductor of the present invention is excellent in high density, small area, and thin, and is incorporated in an information device such as a mobile phone.

Method for Manufacturing Semiconductor Device In the method for manufacturing a semiconductor device of the present invention, a step of adhering a semiconductor adhesive film to one surface of a lead frame having inner leads and a die pad, a semiconductor element on the die pad on the exposed surface of the lead frame. A step of bonding the semiconductor element and the inner lead with a wire by wire bonding, an exposed surface of the lead frame, a step of sealing the semiconductor element and the wire with a sealing material, and a semiconductor adhesive film lead It consists of peeling from the frame and the sealing material. In the present invention, when the lead frame is composed of a plurality of patterns each having a die pad and an inner lead, a plurality of semiconductors each having one semiconductor element are formed by dividing the sealed lead frame, if necessary. The device can be obtained. This dividing step may be performed either after the step of sealing or after the step of peeling the adhesive film for a semiconductor.

The semiconductor adhesive film used in the manufacturing method of the present invention is not particularly limited. For example, the adhesive film for a semiconductor of the present invention can be used, and the lead frame of the present invention can also be used. The lead frame that can be used in the manufacturing method of the present invention and the bonding conditions for bonding the adhesive film for a semiconductor to the lead frame are the same as those described above in the manufacturing of the lead frame of the present invention. The adhesive used for adhering the semiconductor element to the die pad of the lead frame is not particularly limited, and for example, a paste adhesive such as a silver paste or the like,
An adhesive tape or the like can be used. After adhering the semiconductor element to the die pad, the adhesive is usually applied at 140 to 200 ° C.
It is cured by heating for 30 minutes to 2 hours.

In the present invention, the material of the wire used for wire bonding is not particularly limited, but gold wire or the like can be used. In the wire bonding process, for example, 20
The wire is bonded to the semiconductor element and the inner lead by heating at 0 to 270 ° C. for 3 to 30 minutes. In the present invention, the material of the encapsulant is not particularly limited, but examples thereof include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy, and naphthol novolac epoxy resin. An additive such as a filler or a flame retardant substance such as a bromine compound may be added to the sealing material. The sealing condition with the sealing material is not particularly limited, but is usually 150 to 200 ° C., pressure 10 to 15
It is carried out by heating at 2 MPa for 2 to 5 minutes.

The temperature at which the adhesive film for a semiconductor is peeled off after sealing with the sealing material is preferably between 0 and 250 ° C.
When the temperature is lower than 0 ° C., the resin is likely to remain on the lead frame and the sealing material. If the temperature exceeds 250 ° C, the lead frame and the sealing material tend to deteriorate. For the same reason, 100 to 200 ° C is more preferable, and 150 to 250 ° C.
Is particularly preferable. Generally, there is a step of curing the sealing material by heating the sealing material at about 150 ° C. to 200 ° C. for several hours after sealing with the sealing material. The step of peeling off the adhesive film for a semiconductor from the encapsulant and the lead frame may be performed before or after the step of curing the encapsulant.

In the present invention, when the adhesive film for a semiconductor is peeled off at 0 to 250 ° C. after sealing with the sealing material,
It is preferable that no resin remains on the lead frame and the sealing material. When the amount of residual resin is large, not only the appearance is inferior, but also when the lead frame is used for external connection, it is likely to cause poor contact. Therefore, it is preferable to remove the resin remaining on the lead frame and the sealing material by mechanical brushing, a solvent or the like. The solvent is not particularly limited, N-methyl-2-pyrrolidone, dimethylacetamide, diethylene glycol dimethyl ether, tetrahydrofuran,
Cyclohexanone, methyl ethyl ketone, dimethylformamide and the like are preferable.

[0054]

EXAMPLES The present invention will now be specifically described with reference to examples, but these do not limit the present invention. Production Example 1 (Production of aromatic polyether amide imide adhesive varnish used in Examples 1 to 4, 7 and 8) 5 equipped with a thermometer, a stirrer, a nitrogen introducing pipe and a fractionation tower
In a 4-liter four-necked flask under a nitrogen atmosphere, 25,2-bis [4- (4-aminophenoxy) phenyl] propane 258.3 g (0.63 mol), 1,3-bis (3-aminopropyl)- Tetramethyldisiloxane 10.4g
(0.042 mol) was added and dissolved in 1450 g of N-methyl-2-pyrrolidone. The temperature of this solution is raised to 70 ° C,
33.6 g (0.168 mol) of 1,12-diaminododecane was dissolved. Further, this solution was cooled to 0 ° C., and 180.4 g (0.857 mol) of trimellitic anhydride chloride was added. When the trimellitic anhydride chloride was dissolved, 130 g of triethylamine was added. After continuing stirring at room temperature for 2 hours, the temperature was raised to 180 ° C. and reaction was carried out for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After this was dried, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to isolate the polymer again. Then, it was dried under reduced pressure to obtain a purified polyetheramide imide powder. 120 g of the obtained polyetheramide imide powder and a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name:
SH6040) 6 g of N-methyl-2-pyrrolidone 36
It was dissolved in 0 g to obtain an aromatic polyether amide imide adhesive varnish.

Production Example 2 (Production of aromatic polyether amide imide adhesive varnish used in Examples 5 and 6) 5 equipped with a thermometer, a stirrer, a nitrogen introducing pipe and a fractionation tower
In a 4-liter four-necked flask under a nitrogen atmosphere, 25,2-bis [4- (4-aminophenoxy) phenyl] propane 258.6 g (0.63 mol), 1,3-bis (3-aminopropyl) tetra 67.0 g of methyldisiloxane
(0.27 mol) was added and dissolved in 1550 g of N-methyl-2-pyrrolidone. The solution is further cooled to 0 ° C. and trimellitic anhydride chloride 187.
3 g (0.89 mol) was added. When the trimellitic anhydride chloride was dissolved, 100 g of triethylamine was added. After continuing stirring at room temperature for 2 hours, the temperature was raised to 180 ° C. and reaction was carried out for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After this was dried, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to isolate the polymer again.
Then, it was dried under reduced pressure to obtain a purified polyetheramide imide powder. 120 g of the obtained polyether amide imide powder and 3.6 g of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: SH6040) were dissolved in 360 g of N-methyl-2-pyrrolidone to bond with aromatic polyether amide imide. An agent varnish was obtained.

Production Example 3 (Production of aromatic polyether amide imide varnish used for resin layer B in Example 5) 5 equipped with a thermometer, a stirrer, a nitrogen introducing pipe and a fractionation tower
In a 4-liter 4-neck flask, under nitrogen atmosphere, 2,2-bis [4- (4-aminophenoxy) phenyl] propane 172.4 g (0.42 mol), 4,4'-methylenebis (2,6-diisopropyl) Aniline) 153.7 g
(0.42 mol) was added and dissolved in 1550 g of N-methyl-2-pyrrolidone. Further, this solution was cooled to 0 ° C., and trimellitic anhydride chloride 174.
7 g (0.83 mol) was added. When the trimellitic anhydride chloride was dissolved, 130 g of triethylamine was added. After continuing stirring at room temperature for 2 hours, the temperature was raised to 180 ° C. and reaction was carried out for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After this was dried, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to isolate the polymer again.
Then, it was dried under reduced pressure to obtain a purified polyetheramide imide powder. To 120 g of the obtained polyether amide imide powder, 6 g of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: SH6040) was added with N-methyl-2.
-Pyrrolidone was dissolved in 360 g to obtain an aromatic polyether amide imide varnish.

Production Example 4 (Synthesis of Aromatic Polyetheramideimide Powder Used for Resin Layer B in Example 6) 5 equipped with a thermometer, a stirrer, a nitrogen introducing pipe and a fractionation tower
2,2-bis [-(4-aminophenoxy) phenyl] propane 2 in a liter 4-necked flask under a nitrogen atmosphere.
70.9 g (0.66 mol), 1,3-bis (3-aminopropyl) -tetramethyldisiloxane 8.7 g
(0.035 mol) was added and dissolved in 1950 g of N-methyl-2-pyrrolidone. Further, this solution was cooled to 0 ° C., and trimellitic anhydride chloride 149.
5 g (0.71 mol) was added. When the trimellitic anhydride chloride was dissolved, 100 g of triethylamine was added. After continuing stirring at room temperature for 2 hours, the temperature was raised to 180 ° C. and reaction was carried out for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After this was dried, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to isolate the polymer again.
Then, it was dried under reduced pressure to obtain a purified polyetheramide imide powder.

Production Example 5 (Production of aromatic polyether amide imide adhesive varnish used in Example 9) Polyether amide imide powder 12 obtained in Production Example 4
0 g and 3.6 g of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: SH6040) are added to N-methyl-2.
-Pyrrolidone was dissolved in 360 g to obtain an aromatic polyether amide imide adhesive varnish.

Production Example 6 (Production of aromatic polyetherimide adhesive varnish used in Example 10) 5 equipped with a thermometer, a stirrer, a nitrogen introducing tube and a fractionation tower
In a 4-liter 4-necked flask under a nitrogen atmosphere, 2,2-bis [4- (4-aminophenoxy) phenyl] propane 102.5 g (0.25 mol), 4,4'-methylenebis (2,6-diisopropyl) Aniline) 91.5g
(0.25 mol) was added and dissolved in 1900 g of N-methyl-2-pyrrolidone. Further, this solution was cooled to 0 ° C., and 282.2 g (0.49 mol) of bisphenol A bistrimellitate dianhydride was added at this temperature. Then, after stirring at room temperature for 20 minutes and at 60 ° C. for 2 hours,
The temperature was raised to 180 ° C. and the reaction was carried out for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After this was dried, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to isolate the polymer again. Then, it was dried under reduced pressure to obtain a purified polyetherimide powder. 120 g of the obtained polyetherimide powder was dissolved in 360 g of N-methyl-2-pyrrolidone to obtain an aromatic polyetherimide adhesive varnish.

Production Example 7 (Production of aromatic polyether amide imide adhesive varnish used in Examples 11 and 12) 5 equipped with a thermometer, a stirrer, a nitrogen inlet tube and a fractionation tower
In a 4-liter 4-neck flask under a nitrogen atmosphere, bis [4-
(4-Aminophenoxy) phenyl] sulfone 250.
9 g (0.58 mol), 1,3-bis (3-aminopropyl) -tetramethyldisiloxane 7.4 g (0.03)
Mol), and 1500 g of N-methyl-2-pyrrolidone
Dissolved in. Further, this solution was cooled to 0 ° C., and 126.3 g (0.6% of trimellitic anhydride chloride) was added at this temperature.
Mol) was added. When the trimellitic anhydride chloride was dissolved, 67 g of triethylamine was added. After continuing stirring at room temperature for 2 hours, the temperature was raised to 180 ° C. and reaction was carried out for 5 hours to complete imidization. The obtained reaction solution was poured into methanol to isolate the polymer. After this was dried, it was dissolved in N-methyl-2-pyrrolidone and poured into methanol to isolate the polymer again. Then, it was dried under reduced pressure to obtain a purified polyetheramide imide powder. 120 g of the obtained polyetheramide imide powder and a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name:
SH6040) 6.0 g was dissolved in N-methyl-2-pyrrolidone 360 g to obtain an aromatic polyether amide imide adhesive varnish.

Production Example 8 (Production of polysiloxane polyamide block copolymer adhesive varnish used in Comparative Example 1) 5 equipped with a thermometer, a stirrer, a nitrogen introducing pipe and a fractionation tower
2,2-bis [4- (4-aminophenoxy) phenyl] propane 295.2 g (0.72 mol), silicone diamine (manufactured by Shin-Etsu Chemical Co., Ltd., trade name) : X-22-161
540 g (0.18 mol) of B) was added and dissolved in 2400 g of diethylene glycol dimethyl ether. Further, the solution was cooled to -10 ° C, and 188.8 g (0.93 mol) of isophthalic acid chloride was added at this temperature.
Then, after stirring for 1 hour, propylene oxide 21
4 g was added. After continuing stirring at room temperature for 30 minutes, the temperature was raised to 40 ° C. and the reaction was carried out for 5 hours. The obtained reaction solution was poured into methanol to isolate the polymer. After drying this, it was dissolved in dimethylformamide and poured into methanol to isolate the polymer again. Then, it was dried under reduced pressure to obtain a purified polysiloxane polyamide block copolymer powder. 120 g of the obtained resin powder and a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., trade name:
SH6040) 6.0 g was dissolved in 360 g of N-methyl-2-pyrrolidone to obtain a polysiloxane polyamide block copolymer adhesive varnish.

Example 1 A 125 μm-thick surface-treated polyimide film (Upilex SGA manufactured by Ube Industries, Ltd.)
Was used as the support film. On one side of this polyimide film, the aromatic polyether amide imide adhesive varnish produced in Production Example 1 was cast to a thickness of 90 μm, and 1
It was dried at 00 ° C. for 10 minutes and at 300 ° C. for 10 minutes to obtain an adhesive film for a semiconductor having a structure of FIG. The resin layer A had a glass transition temperature of 195 ° C., a 5 wt% reduction temperature of 421 ° C., and an elastic modulus of 7 MPa at 230 ° C. The ratio (A / B) of the thickness (A) of the resin layer A (2) and the thickness (B) of the support film (1) was 0.2.
Next, a copper lead frame (50 mm × 200 mm) coated with palladium at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds.
90 degree peel strength between the resin layer A and the lead frame at 25 ° C. (peel rate: 30 minutes per minute)
0 mm, the same below) was measured to be 150 N / m
Therefore, there was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Next, as shown in FIG. 2, the lead frame (3) after the adhesive film for semiconductor (4) was adhered was placed on the table (5), and the warp (X) in the longitudinal direction of the lead frame (3) was measured. However, it was about 5 mm. Further, using the lead frame to which this adhesive film was adhered, the semiconductor element was adhered, the wire bonding step and the sealing step were performed. The obtained package has a structure in which a plurality of packages shown in FIG. 3 are connected. A silver paste was used for bonding the semiconductor element, and the silver paste was cured by heating at 150 ° C. for 60 minutes. The wire bond was performed by using a gold wire as a wire and heating at 260 ° C. for 5 minutes. In the encapsulation step, a biphenyl encapsulant (Hitachi Chemical Co., Ltd., trade name: CEL9200) is used as an encapsulant, and the temperature is 180 ° C.
The pressure was 10 MPa, the time was 3 minutes, and then heating was performed at 180 ° C. for 5 hours to cure the sealing resin. No problem occurred in any of the steps. In FIG. 3, 4 is an adhesive film for a semiconductor, 6 is a wire, 7 is a sealing material, 3 is a lead frame, 8 is a semiconductor element, and 9 is a die pad (silver paste is not shown). After the encapsulation process, the adhesive film for semiconductors was peeled off from the lead frame and the encapsulant at 235 ° C. (peel rate: 300 mm / min, the same applies below). The resin hardly remained on the lead frame and the sealing resin. The very slight residual resin could also be removed by washing with N-methyl-2-pyrrolidone. Further, this package was divided to manufacture a package having one semiconductor element each, but there was no problem during the process.

Example 2 An adhesive film for a semiconductor was manufactured in the same manner as in Example 1 except that a polyimide film (Upilex SGA manufactured by Ube Industries, Ltd.) having a thickness of 50 μm and having a surface chemically treated was used as the supporting film. Was produced. Thickness of resin layer A (A)
And the thickness ratio (A / B) of the support film thickness (B) is 0.5
Met. Next, temperature 250 ° C, pressure 8 MPa, time 1
It is bonded to a copper lead frame coated with palladium in 0 seconds, and the resin layer A and the lead frame 90 at 25 ° C. are bonded together.
When the peel strength was measured, it was 150 N / m and there was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Further, as shown in FIG. 2, when the warp of the lead frame after adhesion was measured, it was about 1 mm. Further, using the lead frame to which this adhesive film for a semiconductor is adhered, the semiconductor element is adhered in the same manner as in Example 1,
A wire bonding step and a sealing step were performed to manufacture a package having a structure in which a plurality of packages in FIG. 3 were connected, but no problem occurred in any of the steps. 23 after the sealing process
When the semiconductor adhesive film was peeled off from the lead frame and the sealing material at 5 ° C, the 90-degree peel strength was 300 N /
I could easily peel it off with m. The resin hardly adhered and remained on the lead frame and the sealing material.

Example 3 An adhesive film for a semiconductor was prepared in the same manner as in Example 1 except that a polyimide film (upilex SGA manufactured by Ube Industries, Ltd.) having a thickness of 25 μm and chemically treated on the surface was used as the supporting film. Was produced. Thickness of resin layer A (A)
And the thickness ratio (A / B) of the support film thickness (B) is 1.0
Met. Next, temperature 250 ° C, pressure 8 MPa, time 1
It is bonded to a copper lead frame coated with palladium in 0 seconds, and the resin layer A and the lead frame 90 at 25 ° C. are bonded together.
When the peel strength was measured, it was 150 N / m and there was no problem of peeling during transportation. The curl of the adhesive film for a semiconductor was slightly large, but the workability at the time of adhesion was good. Further, as shown in FIG. 2, when the warp of the lead frame after adhesion was measured, it was about 0.5 mm. Further, using the lead frame to which this adhesive film for a semiconductor is bonded, the bonding of the semiconductor element, the wire bonding step, the sealing step and the cutting are performed in the same manner as in Example 1 to obtain a structure in which a plurality of packages in FIG. 3 are connected. A package was produced, but no problem occurred in any of the steps. After the sealing step, when the adhesive film was peeled off from the lead frame and the sealing material at 235 ° C., the 90-degree peel strength was 300 N / m, and the peeling was easy. Further, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 4 An adhesive film for a semiconductor was prepared in the same manner as in Example 1 except that a 125 μm-thick polyimide film having a plasma-treated surface (Upilex SPA manufactured by Ube Industries, Ltd.) was used as the supporting film. Was produced. The thickness ratio (A / B) between the thickness (A) of the resin layer A and the thickness (B) of the support film was 0.2. Next, the temperature is 250 ° C., the pressure is 8 MPa,
It was adhered to a copper lead frame coated with palladium for 10 seconds and the 90 degree peel strength between the resin layer A and the lead frame at 25 ° C. was measured.
There was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Further, as shown in FIG. 2, when the warp of the lead frame after the adhesive film for semiconductor was adhered was measured,
It was about 5 mm. Further, using the lead frame to which this adhesive film for a semiconductor is adhered, the semiconductor element is adhered, the wire bonding step and the sealing step are performed in the same manner as in Example 1 to fabricate a package having a structure in which a plurality of packages in FIG. 3 are connected. However, no problem occurred in any of the steps. After the sealing step, when the adhesive film was peeled off from the lead frame and the sealing material at 235 ° C., the 90-degree peel strength was 330 N / m, and the peeling was easy. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 5 As a supporting film, a polyimide film having a thickness of 25 μm and having its surface subjected to plasma treatment (Upilex SPA manufactured by Ube Industries, Ltd.) was used. On one surface of this polyimide film, the aromatic polyether amide imide adhesive varnish produced in Production Example 2 was cast to a thickness of 50 μm,
Dry at 100 ° C for 10 minutes and 300 ° C for 10 minutes to give a thickness of 1
A resin layer A having a thickness of 0 μm was formed. The glass transition temperature of this resin layer A is 187 ° C., the 5% weight loss temperature is 429 ° C., 23
The elastic modulus at 0 ° C. was 5 MPa. Further, on the opposite surface of the polyimide film, the aromatic polyether amide imide resin varnish produced in Production Example 3 was cast to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and 300 ° C. for 10 minutes to obtain a thickness of A resin layer B having a thickness of 10 μm was formed. This resin layer B
Glass transition temperature of 260 ℃, 5% weight loss temperature is 42
The elastic modulus at 1 ° C. and 230 ° C. was 1700 MPa. Thus, as shown in FIG. 4, an adhesive film for a semiconductor was obtained in which the resin layer A (2) and the resin layer B (10) were applied to the support film (1) on each side.

Next, when the 90 degree peel strength with the lead frame at 25 ° C. was measured after adhering to the copper lead frame coated with palladium at a temperature of 250 ° C., a pressure of 8 MPa and a time of 10 seconds, it was 150 N / m. There was no problem of peeling during transportation. Further, the adhesive film for a semiconductor showed almost no curl, and the workability during bonding was good. Further, as shown in FIG. 2, the warp of the lead frame after the adhesion of the adhesive film for a semiconductor was measured.
It was about 15 mm. Further, using the lead frame to which the adhesive film for a semiconductor is adhered, the semiconductor element is adhered, the wire bonding step and the sealing step are performed in the same manner as in Example 1 to form a package having a structure in which a plurality of packages in FIG. 3 are connected. It was produced, but no problem occurred in any of the steps. After the sealing step, when the adhesive film was peeled off from the lead frame and the sealing material at 205 ° C., the 90-degree peel strength was 300 N / m, and the peeling was easy. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 6 As a supporting film, a polyimide film (Upilex SGA, manufactured by Ube Industries, Ltd.) having a thickness of 25 μm and whose surface was chemically treated was used. On one surface of this polyimide film, the aromatic polyether amide imide adhesive varnish produced in Production Example 2 was cast to a thickness of 50 μm to obtain 100
10 minutes at ℃, 10 minutes at 300 ℃, 10μm thick
The resin layer A of was formed. The glass transition temperature of this resin layer A was 187 ° C., the 5% weight loss temperature was 429 ° C., and the elastic modulus at 230 ° C. was 5 MPa. Further, on the opposite surface of the polyimide film, the aromatic polyether amide imide powder having a glass transition temperature of 230 ° C. prepared in Production Example 4 and bis (4-maleimidophenyl) methane were mixed in 6/4 (former /
The resin varnish mixed in the latter weight ratio was cast to a thickness of 50 μm and dried at 100 ° C. for 10 minutes and 300 ° C. for 10 minutes to form a resin layer B having a thickness of 10 μm. 2 of resin layer B
The elastic modulus at 30 ° C. was 500 MPa. As a result, as shown in FIG. 4, the resin layer A is formed on the support film (1).
An adhesive film for a semiconductor was obtained in which (2) and the resin layer B (10) were applied on each side. Then, the 90-degree peel strength between the resin layer A and the lead frame at 25 ° C. was measured after adhering to the copper lead frame coated with palladium at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds, and the result was 1
At 50 N / m, there was no problem of peeling during transportation. Further, the adhesive film for a semiconductor showed almost no curl, and the workability during bonding was good. Further, as shown in FIG. 2, the warp of the lead frame after the adhesion of the adhesive film for a semiconductor was measured, and it was about 0.15 mm.
Further, using the lead frame to which the adhesive film for a semiconductor is adhered, the semiconductor element is adhered, the wire bonding step and the sealing step are performed in the same manner as in Example 1 to form a package having a structure in which a plurality of packages in FIG. 3 are connected. It was produced, but no problem occurred in any of the steps. After the sealing process, the adhesive film was peeled off from the lead frame and the sealing material at 205 ° C, and the 90 degree peel strength was 300N.
I could easily peel it off with / m. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 7 As a supporting film, a 125 μm-thick polyethylene naphthalate film (Teijin (Teijin Co., Ltd.) was used instead of a 125 μm-thick surface-chemically treated polyimide film (Ube Industries, Ltd., Upilex SGA). An adhesive film for semiconductors was produced in the same manner as in Example 1 except that the product manufactured by), trade name: TEONEX) was used. Thickness of resin layer A
The thickness ratio (A / B) between (A) and the thickness (B) of the support film was 0.2. Next, the temperature is 250 ° C., the pressure is 8 MPa,
It was adhered to a copper lead frame coated with palladium for 10 seconds and the 90 degree peel strength between the resin layer A and the lead frame at 25 ° C. was measured.
There was no problem of peeling during transportation. The curl of the adhesive film for a semiconductor was slightly large, but the workability at the time of adhesion was good. Further, as shown in FIG. 2, when the warp of the lead frame after adhesion was measured, it was about 5 mm. Further, using the lead frame to which the adhesive film for a semiconductor is bonded, the bonding of the semiconductor element, the wire bonding step and the sealing step are performed in the same manner as in Example 1.
A package having a structure in which a plurality of packages shown in FIG. 3 were connected was produced, but no problem occurred in any of the steps. After the sealing step, the adhesive film was peeled off from the lead frame and the sealing material at 235 ° C., and the 90-degree peel strength was 33.
It was easily peeled off at 0 N / m. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 8 An adhesive film for a semiconductor was prepared in the same manner as in Example 1,
It was adhered to a 42 alloy lead frame at a temperature of 350 ° C., a pressure of 3 MPa, and a time of 3 seconds, and the 90 degree peel strength between the resin layer A and the lead frame at 25 ° C. was measured.
At 00 N / m, there was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Further, as shown in FIG. 2, the warp of the lead frame after the adhesion of the adhesive film for a semiconductor was measured, and it was about 4 mm. Further, using the lead frame to which the adhesive film for a semiconductor is adhered, the semiconductor element is adhered, the wire bonding step and the sealing step are performed in the same manner as in Example 1 to form a package having a structure in which a plurality of packages in FIG. 3 are connected. It was produced, but no problem occurred in any of the steps. After the sealing step, when the adhesive film was peeled from the lead frame and the sealing material at 235 ° C., the 90-degree peel strength was 250 N / m, and the peeling was easy. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 9 An adhesive film for a semiconductor was produced in the same manner as in Example 1 except that the aromatic polyether amide imide adhesive varnish produced in Production Example 5 was used for forming the resin layer A. The glass transition temperature of the resin layer A was 230 ° C., the 5 wt% reduction temperature was 451 ° C., and the elastic modulus at 230 ° C. was 150 MPa. Next, it was bonded to a copper lead frame coated with palladium at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds.
When the 90 degree peel strength between the resin layer A and the lead frame at 25 ° C. after adhesion was measured, it was 50 N / m, and there was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Furthermore, according to FIG. 2, the warp of the lead frame after adhesion of the adhesive film for a semiconductor was measured and found to be 5 m.
It was about m. Further, using the lead frame to which the adhesive film for a semiconductor is adhered, the semiconductor element is adhered, the wire bonding step and the sealing step are performed in the same manner as in Example 1 to form a package having a structure in which a plurality of packages in FIG. 3 are connected. It was produced, but no problem occurred in any of the steps. After the sealing step, when the adhesive film for a semiconductor was peeled off from the lead frame and the sealing material at 205 ° C., the 90-degree peel strength was 300 N / m, and the peeling was easy. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 10 An adhesive film for a semiconductor was produced in the same manner as in Example 1 except that the aromatic polyetherimide adhesive varnish produced in Production Example 6 was used for forming the resin layer A. The glass transition temperature of the resin layer A is 240 ° C. and the 5% weight loss temperature is 410.
The elastic modulus at 300 ° C. and 230 ° C. was 300 MPa.
Next, the adhesive film for a semiconductor was bonded to a palladium-coated copper lead frame at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds. When the 90 degree peel strength between the resin layer A and the lead frame at 25 ° C. after adhesion was measured, it was 50 N / m, and there was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Further, according to FIG. 2, the warp of the lead frame after the adhesion of the adhesive film for a semiconductor was measured, and it was about 5 mm. Furthermore, using a lead frame with this semiconductor adhesive film bonded,
Adhesion of semiconductor elements, wire bonding step, and sealing step were performed in the same manner as in Example 1 to manufacture a package having a structure in which a plurality of packages in FIG. 3 were connected, but no problem occurred in any of the steps. After the sealing step, when the adhesive film for semiconductor was peeled off from the lead frame and the sealing material at 235 ° C., the 90-degree peel strength was 600 N / m, and the peeling was easy. Furthermore, the resin hardly adhered and remained on the lead frame and the sealing material.

Example 11 As a supporting film, a 25 μm thick polyimide film having a surface subjected to a sand mat treatment (manufactured by Toray DuPont Co., Ltd., trade name: Kapton EN, a linear thermal expansion coefficient at 20 to 200 ° C. is 1) 0.5 × 10 ^-5 / ° C, 2 at 200 ° C
The heat shrinkage percentage when heated for 0.02% was used.
On one side of this polyimide film, 25 μm of the aromatic polyether amide imide adhesive varnish produced in Production Example 7 was applied.
Sulfurized to a thickness of m, 10 minutes at 100 ℃, 10 at 300 ℃
After minute drying, an adhesive film for a semiconductor having a constitution of FIG. 1 in which a resin layer A having a thickness of 4 μm was attached to one side of a supporting film was obtained.
The glass transition temperature of this resin layer A is 260 ° C., the 5% weight loss temperature is 430 ° C., and the elastic modulus at 230 ° C. is 1500.
It was MPa. Next, temperature 280 ° C., pressure 6 MPa,
The adhesive film for a semiconductor was adhered to a copper lead frame coated with palladium in 10 seconds. Resin layer A after bonding
When the 90 degree peel strength between the lead frame and the lead frame was measured at 25 ° C., it was 10 N / m, and there was no problem of peeling during transportation. Further, the adhesive film for a semiconductor showed almost no curl, and the workability during bonding was good. Further, as shown in FIG. 2, the warp of the lead frame after the adhesion of the adhesive film for a semiconductor was measured, and it was about 0.1 mm.

Further, the step of adhering the semiconductor element to the die pad was performed using the lead frame to which the adhesive film for a semiconductor was adhered. At this time, after heating at 150 ° C. for 90 minutes to cure the silver paste for adhesion, the temperature is set to 25 ° C.
The 90 degree peel strength between the lead frame and the resin layer A was measured and found to be 10 N / m. Further, wire bonding was performed using a lead frame to which this semiconductor element was bonded. At this time, after heating at 260 ° C. for 5 minutes,
When the 90 degree peel strength between the lead frame and the resin layer A at 25 ° C. was measured, it was 15 N / m. Further, using this lead frame, a sealing process was performed in the same manner as in Example 1 to fabricate a package having a structure in which a plurality of packages in FIG. 3 were connected. The package was sealed between the lead frame and the resin layer A during the sealing process. There was no problem such as the entry of stoppers. After the sealing step, the adhesive film for a semiconductor was peeled off from the lead frame and the sealing material at 175 ° C.
The 0 degree peel strength was 50 N / m, and the peeling was easy.

Example 12 In the same manner as in Example 11, the production of an adhesive film for a semiconductor, the attachment to a lead frame (using a different lead frame), the attachment of a semiconductor element, the wire bonding step and the sealing step were performed, and The package of No. 5 was manufactured, but no problem occurred in any of the steps. After the sealing step, when the semiconductor adhesive film was peeled off from the lead frame and the sealing material at 175 ° C., the 90-degree peel strength was 50 N / m, and the peeling was easy. Furthermore, the adhesive hardly adhered and remained on the lead frame and the sealing material. Further, the package of FIG. 6 was manufactured by dividing this package.
No problems occurred during the process.

Comparative Example 1 As the supporting film, a polyimide film having a thickness of 125 μm and having its surface chemically treated (Upilex SGA manufactured by Ube Industries, Ltd.) was used. On one surface of this support film, the polysiloxane polyamide block copolymer adhesive varnish produced in Production Example 8 was cast to a thickness of 90 μm,
Dry at 100 ℃ for 10 minutes and 300 ℃ for 10 minutes to obtain a thickness of 2
An adhesive film for a semiconductor having the constitution of FIG. 1 in which the resin layer A (2) having a thickness of 5 μm was attached to one surface of the supporting film (1) was obtained. The resin layer A had a glass transition temperature of 182 ° C., a 5% weight loss temperature of 380 ° C., and an elastic modulus at 230 ° C. of less than 1 MPa. Resin layer A thickness (A) and support film thickness
The thickness ratio (A / B) to that of (B) was 0.2. Next, this adhesive film for a semiconductor was subjected to a temperature of 250 ° C., a pressure of 8 MPa,
It was adhered to a copper lead frame coated with palladium for 10 seconds, and the 90 degree peel strength between the lead frame and the resin layer A at 25 ° C. was measured. As a result, it was 0 N / m and peeled off during transportation. Could not be done. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Further, according to FIG. 2, the warp of the lead frame after adhesion was measured and found to be about 5 mm.

Comparative Example 2 As a supporting film, a polyimide film having a thickness of 125 μm and having its surface chemically treated (Upilex SGA manufactured by Ube Industries, Ltd.) was used. On one side of this support film, a phenol resin adhesive varnish was cast to a thickness of 80 μm and dried at 100 ° C. for 10 minutes and 150 ° C. for 10 minutes to support a resin layer A (2) having a thickness of 25 μm. An adhesive film for a semiconductor having the constitution of FIG. 1 attached to one side of the film (1) was obtained. The glass transition temperature of the resin layer A is 180 ° C., 5%
Weight loss temperature is 280 ° C, elastic modulus at 230 ° C is h
It was 10 MPa. The thickness ratio (A / B) between the thickness (A) of the resin layer A and the thickness (B) of the supporting film was 0.2.

Next, this semiconductor adhesive film was adhered to a copper lead frame coated with palladium at a temperature of 250 ° C., a pressure of 8 MPa, and a time of 10 seconds to obtain a 90 ° peel strength between the lead frame and the resin layer A at 25 ° C. When measured, it was 300 N / m, and there was no problem of peeling during transportation. Further, the curl of the adhesive film for a semiconductor was small, and the workability at the time of bonding was good. Further, as shown in FIG. 2, when the warp of the lead frame after adhesion was measured, it was about 5 mm. Further, using the lead frame to which the adhesive film for a semiconductor is adhered, the semiconductor element is adhered, the wire bonding step and the sealing step are performed in the same manner as in Example 1 to form a package having a structure in which a plurality of packages in FIG. 3 are connected. Although it was manufactured, outgas was generated in the wire bonding process, and there was a problem that the wire was contaminated. After the sealing step, when the semiconductor adhesive film was peeled off from the lead frame and the sealing material at 190 ° C., the 90-degree peel strength was 1100 N / m, and the sealing material was partially damaged. In addition, a large amount of resin remains on the lead frame and the encapsulant, leaving N-
It was difficult to remove even after washing with methyl-2-pyrrolidone.

From the results of Examples 1 to 12 and Comparative Examples 1 and 2, the 90 degree peel strength with the lead frame at 25 ° C. was 5 N / m or more, and after the resin sealing, 0 ° C. to 25 ° C.
By using an adhesive film for a semiconductor that can be peeled from the lead frame and the sealing material, the 90 degree peel strength between the lead frame and the sealing material is 1000 N / m or less at least at one point in the temperature range of 0 ° C. It is shown that can be manufactured with high workability and productivity.

[0080]

The adhesive film for a semiconductor according to the present invention comprises:
It has high adhesion to the lead frame at 25 ° C, and can be easily peeled off from the leadframe and the sealing resin at 0 to 250 ° C after resin encapsulation, so that the semiconductor package is manufactured with high workability and productivity. It makes it possible. Further, the semiconductor device of the present invention produced by using this adhesive film for a semiconductor is excellent in terms of high density, small area, and thinness, and is suitable for use in information devices such as mobile phones. ing.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an adhesive film for a semiconductor according to one embodiment of the present invention.

FIG. 2 is a side view showing a method of measuring warpage of a lead frame to which an adhesive film for a semiconductor is adhered.

FIG. 3 is a cross-sectional view illustrating a semiconductor device of one embodiment of the present invention.

FIG. 4 is a cross-sectional view of an adhesive film for a semiconductor according to one embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a semiconductor device including an adhesive film for a semiconductor according to one embodiment of the present invention.

FIG. 6 is a sectional view showing a semiconductor device manufactured using the adhesive film for a semiconductor of the present invention.

[Explanation of symbols]

1 Support film 2 Resin layer A 3 lead frame 4 Adhesive film for semiconductors 5 units 6 wires 7 Sealant 8 Semiconductor elements 9 die pad 10 Resin layer B

─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-11-251504 (JP, A) JP-A-11-246685 (JP, A) JP-A-8-157599 (JP, A) JP-A-3- 94460 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 23/50

Claims (7)

(57) [Claims] 1. An adhesive film is attached to the back surface of the lead frame to protect it, and then a semiconductor element is attached to the lead frame.
An adhesive film for a semiconductor used for a method of adhering, peeling after sealing, wherein a resin layer A is formed on one side or both sides of the supporting film, and the supporting film is 20
The coefficient of linear thermal expansion at ˜200 ° C. is 3.0 × 10 ⁻⁵ /
An adhesive film for semiconductors having a temperature of ℃ or less. 2. An adhesive film is attached to the back surface of the lead frame to protect it, and then a semiconductor element is attached to the lead frame.
An adhesive film for a semiconductor used for a method of adhering, peeling after sealing, wherein a resin layer A is formed on one side or both sides of the supporting film, and the supporting film is 20
An adhesive film for semiconductor, which has a heat shrinkage of 0.15% or less when heated at 0 ° C. for 2 hours. 3. Heating the support film at 200 ° C. for 2 hours
The adhesive film for a semiconductor according to claim 1, which has a heat shrinkage of 0.15% or less . 4. The thickness of the supporting film is 5 μm or more and 50 μm or more.
The adhesive film for a semiconductor according to any one of claims. 1 to 3 m or less. 5. The glass transition temperature of the support film is 20.
The adhesive film for a semiconductor according to 0 claim. 1 to 4 ° C. or more. 6. The material of the supporting film is composed of aromatic polyimide, aromatic polyamideimide, aromatic polyether sulfone, polyphenylene sulfide, aromatic polyether ketone, polyarylate, aromatic polyether ether ketone and polyethylene naphthalate. the adhesive film for a semiconductor according to any one of claims 1 to 5, those selected from the group. 7. A material of the support film, copper, aluminum, adhesive film for a semiconductor according to any one of claims 1 to 4, those selected from the group consisting of stainless steel and nickel.