JP3433634B2 - Sample preparation method for crystal defect observation in semiconductor single crystal and crystal defect observation method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for preparing a sample for observing minute crystal defects in a semiconductor single crystal with an electron microscope. The present invention relates to a sample preparation method and a crystal defect observation method for directly observing crystal defects as they are.

[0002]

2. Description of the Related Art Conventionally, a silicon semiconductor single crystal or Ga has been used for manufacturing a semiconductor device such as a VLSI.
Compound semiconductor single crystals such as As, GaP and InP have been used. Since these semiconductor single crystals are required to have high purity and low defects, they are often manufactured by the so-called FZ method or Czochralski method (CZ method). However, it is known that even with these highly controlled semiconductor single crystal manufacturing methods, minute crystal defects are introduced into the manufactured semiconductor single crystal at a very small amount during the growth of the single crystal. .

For example, in a silicon single crystal grown by the Czochralski method, fine crystal defects, which are generally referred to as as-grown defects or grown-in defects, are introduced during crystal growth as those that deteriorate the breakdown voltage characteristics of the oxide film. It Some of these crystal defects are called by various names depending on the detection method. That is, when a mirror-polished silicon wafer is repeatedly treated with a cleaning solution composed of aqueous ammonia and aqueous hydrogen peroxide and detected as pits by a particle measuring instrument, COP (Crystal Origina)
ted Particle) (J. Ryuta, E. Morita, T.
Tanaka and Y.Shimanuki; Jpn.J.Appl.Phys.29 (1990) L1
947), pits with flow patterns that occur when a wafer is dipped in a Seco solution known as a selective etching solution for detecting dislocations and stacking faults are called flow pattern defects (H. Yamagishi, I.Fusegawa, NF
ugimaki and M. Katayama; Semicond.Sci. & Tech.7 (1992)
A135). Further, in the infrared scattering tomography method in which infrared laser light is incident on a mirror surface or a concave surface to detect scattering due to minute defects, laser scatterer defects (LSTD; La
Ser Scattering Tomographic Defect) (P.Gall, JP.Fillard, J.Bonnafe, T.Rakotomavo, H.Rufe
r and H. Schwenk; Defect Control in Semiconductors e
There are several types such as dKSumino (Norh-Holland, Amsterdam, 1990) p.255).

And, including the recent ultra-LSI,
With the miniaturization and high integration of semiconductor elements, the minute defects in the crystal as described above are a major factor of the device yield reduction.It is necessary to investigate the causes of these defects and take countermeasures against them. Has become.

[0005]

However, since these crystal defects are extremely minute (for example, 1 μm or less) and have a low density, it is difficult to specify the crystal defect position, and the technique can be directly observed or analyzed. However, in order to perform transmission electron microscope observation, which is the only method that can accurately identify crystal defects crystallographically, it is necessary to specify the positions of microcrystalline defects and perform sample preparation. is there.

In this respect, as a method of preparing a transmission electron microscope observation sample of a specific portion on a semiconductor substrate, a method as disclosed in, for example, JP-A-8-3768 has been proposed. However, this method only shows a method of preparing a sample for observing a defect whose position is known in advance or existing at a predetermined position, and the position of the defect in the semiconductor crystal is originally assumed. Since it is unknown, unless the defect to be observed and the position thereof can be specified as described above, the crystal defect cannot be observed and identified by the transmission electron microscope.

Although microscopic crystal defects taken into the oxide film and COP observation with a transmission electron microscope have already been tried, some of the defects are exposed on the surface in order to detect both. The upper part has already been lost as it is necessary to stay. Furthermore, in the former, the electric field is applied to precipitate copper and the position of the defect is specified, and the crystal defect is affected by the electric field (M.Itsumi, H.Akiya,
T.Ueki, M. Tomita and M. Yamawaki; Jpn.J.Appl.Phys.35
(1996) 812). The latter observes the pits formed by the etching effect of the cleaning solution consisting of ammonia water and hydrogen peroxide solution, so that the crystal defects are chemically etched by the cleaning solution (M. Miyazaki, SM
iyazaki, Y.Yanase, T.Ochiai and T.Shigematsu; Jpn.JA
ppl.Phys.34 (1995) 6303). Therefore, it is considered that what is observed here has already been altered and is not the crystal defects themselves in the semiconductor single crystal introduced during crystal growth.

The present invention has been made in view of the above problems, and in observing microcrystal defects by an electron microscope, first, the position of the microcrystal defect to be observed is searched for and specified, and then the specified crystal is observed. It is an object of the present invention to provide a method for preparing a sample and an observation method which allow observation of defects in the state of the semiconductor single crystal as it is without being affected by an electric field or chemical etching. Then, by this, the crystal defect in the semiconductor single crystal is searched and the position is specified,
The crystal defects can be directly identified, the cause of occurrence can be investigated and the countermeasures can be facilitated, and eventually the accuracy or yield of semiconductor devices can be improved.

[0009]

In order to solve the above-mentioned problems, the invention described in claim 1 of the present invention is a method for preparing a sample for observing crystal defects in a semiconductor single crystal. A step of forming a pattern for identifying the crystal defect position on the surface of the semiconductor single crystal having this pattern formed, by a crystal defect observation device, confirming the crystal defects in the semiconductor single crystal while referring to the pattern, Positioning step, cutting out a portion containing a specified crystal defect in the semiconductor single crystal with reference to the pattern, and removing the periphery of the crystal defect portion in the cut out single crystal by a focused ion beam device And a step of performing.

As described above, a pattern is formed in advance on the surface of the semiconductor single crystal, and the semiconductor single crystal having this pattern is observed by a crystal defect observing device with reference to the pattern. By observing, the position of the crystal defect can be easily specified. Then, the portion including the specified crystal defect is cut out with reference to the pattern, and the periphery of the crystal defect portion in the cut out single crystal is removed by a focused ion beam device. It is possible to obtain a sample in which crystal defects in crystals can be observed as they are.

More specifically, in this case, claim 2
As described in 1., a method for preparing a sample for observing crystal defects in a semiconductor single crystal, comprising a step of forming a thin film of a metal or a photosensitive resin on the surface of the semiconductor single crystal, and photolithography on the thin film. A step of forming a thin film pattern on the surface of the semiconductor single crystal by applying the crystal pattern in the semiconductor single crystal with a crystal defect observing device using an optical probe. A step of confirming and positioning a defect, a step of cutting out a portion containing a specified crystal defect in the semiconductor single crystal with reference to the pattern, and a focused ion around the crystal defect part in the cut out single crystal And a step of removing with a beam device.

In this case, before the step of confirming and positioning the crystal defects in the semiconductor single crystal by using the crystal defect observing device using the optical probe, the patterned semiconductor single crystal as described in claim 3 In addition, if the semiconductor single crystal is separated, more accurate crystal defect position measurement can be performed.

If the step of forming the metal thin film is performed by vapor deposition of aluminum, it is possible to easily and accurately form a pattern.

Next, the invention described in claim 5 of the present invention is a method for preparing a sample for observing crystal defects in a semiconductor single crystal, wherein a thin film of a photosensitive resin is formed on the surface of the semiconductor single crystal. A step of forming, a step of subjecting the thin film to photolithography to form a thin film pattern on the surface of the semiconductor single crystal, a step of etching the surface of the semiconductor single crystal to form a step, and a step of forming the step Crystal,
A crystal defect observing device using an optical probe is used to confirm and position a crystal defect in a semiconductor single crystal while referring to the step, and a step including a portion including the specified crystal defect in the semiconductor single crystal And a step of removing the periphery of the crystal defect portion in the cut single crystal with a focused ion beam apparatus.

As described above, in order to form the pattern for specifying the crystal defect position on the surface of the semiconductor single crystal, not only the thin film formed on the surface of the semiconductor single crystal is patterned, but also the surface itself of the single crystal is etched. It is also effective to provide a step by.

Also in this case, the semiconductor single crystal having a step is formed by a crystal defect observing device using an optical probe before the step of confirming and positioning the crystal defect in the semiconductor single crystal. If so, the position of the crystal defect can be measured more accurately (claim 6).

The crystal defect observing device for confirming and locating crystal defects in the present invention may be an infrared scattering tomography method. With such an apparatus, the presence of minute crystal defects in the semiconductor single crystal can be confirmed and positioned easily and accurately (claim 7).

First, as a semiconductor single crystal to which the method of the present invention is applied, silicon can be mentioned. The present invention is particularly useful in the analysis and measurement of semiconductor silicon, which is becoming more highly integrated and highly accurate, and in which minute crystal defects are very problematic (claim 8).

When the crystal defect observing sample produced by the method according to any one of claims 1 to 8 is observed with a transmission electron microscope, the fine crystal defects in the semiconductor single crystal to be observed are observed. The defect can be located and located, and this defect can be observed as it is in the semiconductor single crystal, which is not affected by the electric field or chemical etching. Therefore, the crystal defect in the semiconductor single crystal can be directly identified. Therefore, it is possible to investigate the cause of the occurrence and facilitate the countermeasure (claim 9).

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below as minute crystal defects in a semiconductor single crystal to be observed, which cause deterioration of oxide film withstand voltage characteristics in a silicon semiconductor manufactured by the Czochralski method. The description will be made by taking a crystal defect as an example, but the present invention is not limited thereto. Here, FIG. 1 is a diagram showing an example of a schematic process flow of a crystal defect observing method according to the present invention.

The density of crystal defects due to crystal growth, which is the main problem in the present invention, is 10 ⁵ / cm ³ to 10 ⁶ / c.
m ³ , which is too low for observation with a transmission electron microscope. That is, in order to easily find crystal defects in a sample with a transmission electron microscope, the crystal defect density is 1
It is necessary to add about 0 ¹⁰ / cm ³ to 10 ¹¹ / cm ³ , and in order to observe low-density crystal defects, some kind of mark is added or copper is deposited as described above to form a crystal. It is necessary to find the defect and identify its position. However, for semiconductor single crystal mirror-polished wafers before the device process,
There is no mark, and in the method of depositing copper, the crystal defects are altered and the morphology as it is cannot be observed. Therefore, in the present invention, the semiconductor single crystal is first provided with a pattern for specifying the crystal defect position.

In step A of FIG. 1, a semiconductor single crystal silicon rod grown by the Czochralski method is sliced into a wafer, and the obtained silicon wafer is polished according to a general method to obtain a semiconductor silicon mirror-polished wafer. . In the silicon wafer thus obtained, minute crystal defects are introduced when grown by the Czochralski method.

Next, in step B, a thin film of aluminum is formed on the surface of the mirror-polished silicon wafer by vapor deposition. The metal thin film to be formed is not particularly limited, and iron, copper, chromium, as long as it can form a pattern on a silicon semiconductor,
Although any material such as tungsten may be used, aluminum is suitable because it is easy to obtain a highly accurate pattern and is inexpensive. Further, the thin film forming method is not limited to the vapor deposition method, and a generally used thin film forming technique, for example, a sputtering method, an ion plating method,
You may perform by a CVD method etc.

The thin film to be formed is not limited to metal, and in principle, any thin film can be used as long as it can form a pattern on the silicon semiconductor as described above. In particular, since the photosensitive resin used in the conventional semiconductor device process can form a pattern with extremely high precision by photolithography, it is also effective to use it. The thin film forming method in this case is not particularly limited, and may be a commonly used method such as a coating method, a spin coater method, or a dipping method.

Next, in step C, the thin film on the surface of the semiconductor single crystal formed above is subjected to photolithography to form, for example, a plurality of band-shaped patterns. An example of a diagram in which the formed band-shaped pattern is observed with an optical microscope is shown in FIG. 2. The bright part is vapor-deposited aluminum and the black part is the surface of silicon.

In this case, the width of the band-shaped pattern is preferably narrower in order to specify the position of the crystal defect, but if it is too narrow, the position can be specified by approaching the incident wavelength of the crystal defect observing apparatus using the optical probe. Since it becomes difficult to perform, it is preferable to set the width to about 5 to 50 microns, particularly about 10 microns. Also, the pattern formed is
As shown in FIG. 2, it is also possible to form bands with different intervals or to form a pattern of numbers in a part where several bands are formed at regular intervals so that the work of searching for crystal defects and specifying their positions can be performed quickly. This is preferable because it can be performed, but the present invention is not limited to this and any principle can be used as long as the crystal defect position can be specified.

Next, in step D, the semiconductor single crystal wafer on which the band-shaped pattern is formed is scribed if necessary. Among the crystal defect observation devices that use the optical probe used to confirm the crystal defects in the next step and to identify their positions, the commercially available device that uses the infrared scattering tomography method, the incident light obliquely on the wafer surface There is a type that allows non-destructive measurement in which the scattered light is obliquely detected and a type that allows incident light to be vertically incident on the wafer surface or a cleaved surface and that the scattered light be extracted vertically from the cleaved surface or the wafer surface. In this case, it is the latter type that can more accurately identify the position, and when using this, it is necessary to hinder the sample. Here, the latter type was used.

Next, in step E, the cleaved sample is set in an infrared scattering tomography apparatus, incident light is introduced from a cleaved surface near the wafer surface, and the scattered light is taken out for crystal defect observation. In order to specify the crystal defect position, it is necessary to apply visible light to the wafer surface during observation so that a band-shaped pattern can be confirmed on the display screen of the device.

FIG. 3A is an operation diagram showing a state in which a crystal defect is searched for by infrared scattering tomography observation and the position thereof is identified, and FIG. 3B is an infrared scattering tomograph apparatus. 6 is a diagram showing a display screen. In the center of the wafer in FIG. 3A, the dark part is the aluminum band and the white part is the silicon surface. Figure 3 (B)
On the contrary, the bright part is the aluminum band and the black part is the silicon surface. In FIG. 3 (B), the white dots visible at the tip of the arrow in the black portion indicate the presence of microcrystalline defects. In this way, the presence of crystal defects in the semiconductor single crystal is confirmed, and if the positioning can be done from the pattern, this is recorded.

Next, in step F, the portion containing crystal defects in the semiconductor single crystal identified as described above is
The sample is cut out (dicing) with reference to the pattern so that the fine crystal defect portion is almost in the center. Dicing can be performed with a dicing device using a normal diamond grindstone. In this case, since a general dicing device is equipped with an optical microscope at a low magnification, the pattern can be easily confirmed.

Next, in step G, the cut-out sample is set in a focused ion beam apparatus, an unnecessary portion around the crystal defect portion is removed by an ion beam with reference to a pattern, and a portion where a fine crystal defect exists Thin the film.
FIG. 4 is an enlarged schematic diagram (A) when the sample is cut out, an enlarged schematic diagram (B) of the sample obtained by further subjecting the cut out sample to focused ion beam processing, and an observation diagram (C) of a crystal defect portion with a scanning electron microscope. ) Is shown.

By the way, this focused ion beam (Focuse
The d ion beam) device is a device capable of performing extremely fine processing, which is characterized by shaving off the portion of a sample by irradiating the sample with an accelerated ion beam and making it extremely narrow. A simple principle diagram of this device is shown in FIG. 5. Normally, gallium ions are used for the ion beam, and the acceleration voltage is set to about 30 KV, for example. The accelerated ion beam is converged extremely finely by the two-stage magnetic lens formed by the electromagnetic coil and is irradiated on the sample (minimum beam diameter: about 10 nm). Ion beam irradiation can scan a certain area many times, and the scanning area can be easily set by the apparatus. The surface of the sample irradiated with the ion beam is scraped off by the beam, so that only a portion of the designated scanning region is removed. Since secondary electrons, secondary ions, etc. are generated from the sample irradiated with the ion beam, the intensity of the secondary electrons is detected by a detector, and when the intensity is detected and displayed on the CRT in synchronization with the scanning of irradiation, a scanning electron microscope ( SE
An image of extremely high magnification is obtained as in M). Therefore, by using this device, high-magnification observation and processing can be performed at the same time, and therefore, it is possible to perform processing to accurately remove unnecessary portions around the crystal defect portion while referring to the pattern. Defects can be exposed as they are. The processing accuracy is 0.1 micron or less.

Next, in step H, microcrystal defects in the produced sample are observed with a transmission electron microscope. In this way, crystal defects in the semiconductor single crystal silicon can be found, and the defects can be directly observed and identified as they are.

Examples of the observation results are shown in FIGS. 6 and 7. The observation diagram obtained by this transmission electron microscope reveals that a part of the octahedral structure has holes and crystal defects with a deformed shape are connected to it. The whole state (Fig. 6 (A)) or the state in which two octahedral structures are connected (Fig. 7 (A)) is observed (see Fig. 6 (B) and Fig. 7 (B)). ). The inside of the octahedron and the defects connected to it are cavities, and when elemental analysis was performed on this with an energy dispersive electron microscope, oxygen was detected in the crystal defects, and the defects contained oxides. Was confirmed.

In the above example, a method of forming a band-shaped pattern by using aluminum, and by scratching the wafer to identify the position of the fine crystal defects by using the infrared scattering tomography apparatus has been described. It is also possible to use a metal thin film other than aluminum, or it is possible to form a pattern only with a thin film of a photosensitive resin. Further, after forming a pattern with a photosensitive resin, it is possible to form a step by etching the silicon surface using the pattern of the resin as a mask and refer to the step to specify the position with a crystal defect observing device. is there.

As a crystal defect observing apparatus using an optical probe, a crystal defect observing apparatus (trade name: trade name:
Optical Precipitate Profiler Abbreviation: OPP, High Yie
ld Technology) can also be used.

The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, has substantially the same configuration as the technical idea described in the scope of the claims of the present invention, and has any similar effect to the present invention. It is included in the technical scope of the invention.

For example, in the above-described embodiment of the present invention, as the microcrystalline defects in the semiconductor single crystal to be observed, the microcrystalline defects that deteriorate the oxide film withstand voltage characteristics in the silicon semiconductor manufactured by the Czochralski method are included. Although the present invention is described by way of example, it goes without saying that the present invention is not limited to these, and can be applied to those manufactured by other methods such as the FZ method, and other than silicon, for example, compound semiconductor single crystals, oxide single crystals. It is also effective for observing crystal defects such as.

The types of observable microcrystalline defects are not particularly limited, and are used not only for the COP, flow pattern defect, LSTD, etc., but also for analysis when a crystalline defect occurs due to foreign matter adhesion, for example. You can

[0040]

As described above, according to the present invention, a fine crystal defect in a semiconductor single crystal is searched for and specified, and the specified defect is directly crystallized without being affected by an electric field or chemical etching. It is possible to directly identify the crystal defects by making a sample in which the entire contents of the defects can be observed. In particular, in the method of the present invention, the semiconductor single crystal to be observed is first provided with a pattern and integrated, so that the positional relationship between the crystal defect and the pattern from the search for the crystal defect to the completion of the preparation of the observation sample. Since there is no deviation, it is easy to search and identify crystal defects, and the subsequent processing of the sample can be performed accurately. Therefore, according to the present invention, it is possible to observe and analyze crystal defects with extremely high accuracy. Therefore, the present invention can facilitate the investigation of, for example, the cause of occurrence of crystal defects in a semiconductor single crystal, or the countermeasure thereof, which can contribute to the improvement of accuracy or yield of semiconductor devices.

[Brief description of drawings]

FIG. 1 is a diagram showing an example of a schematic process flow of a crystal defect observing method according to the present invention.

FIG. 2 is a diagram showing an example of a result of observing a sample surface after forming a band-shaped pattern with an optical microscope.

FIG. 3 (A) is an operation diagram showing a state in which a crystal defect position is specified by infrared scattering tomography observation. FIG. 3B illustrates a display screen of the infrared scattering tomography apparatus.

FIG. 4A is an enlarged schematic diagram when a sample is cut out. (B) is an enlarged schematic view of a sample obtained by further performing focused ion beam processing on the cut sample. (C)
[FIG. 4] is an observation view of a crystal defect portion with a scanning electron microscope.

FIG. 5 is a simple principle diagram of a focused ion beam device.

FIG. 6 is a result of observing microcrystalline defects in a sample manufactured by the sample manufacturing method of the present invention with a transmission electron microscope (a part of octahedral structure is perforated type). (A) Observation diagram by a transmission electron microscope, (B) Schematic diagram of crystal defects.

FIG. 7 is a result of observing microcrystalline defects in a sample manufactured by the sample manufacturing method of the present invention with a transmission electron microscope (two octahedral structure connected type). (A) Observation diagram by a transmission electron microscope, (B) Schematic diagram of crystal defects.

[Explanation of symbols]

A: Semiconductor silicon mirror wafer manufacturing process, B ... Thin film forming step, C ... pattern forming step, D ... Wafer cutting process, E ... Crystal defect position specifying step, F ... Dicing process, G ... Focused ion beam processing step, H ... Transmission electron microscope observation step.

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-231998 (JP, A) JP-A-8-5528 (JP, A) JP-A-8-3768 (JP, A) JP-A-6- 112292 (JP, A) JP-A-3-237738 (JP, A) JP-A-5-312696 (JP, A) JP-A-8-261897 (JP, A) JP-A-7-226428 (JP, A) JP-A-8-261957 (JP, A) JP-A-6-23656 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) G01N 1/00-1/44 C30B 15/00 -15/36 C30B 29/00-29/68 H01L 21/66 G01N 21/84-12/958 JISST file (JOIS)

Claims (9)

(57) [Claims] 1. A method for preparing a sample for observing crystal defects in a semiconductor single crystal, comprising a step of forming a pattern for specifying a crystal defect position on the surface of the semiconductor single crystal, and forming this pattern. A step of confirming and positioning a crystal defect in the semiconductor single crystal with reference to the pattern by a crystal defect observing device, and a portion including the specified crystal defect in the semiconductor single crystal A sample preparation for observing a crystal defect in a semiconductor single crystal, which comprises a step of cutting out with reference to a pattern and a step of removing the periphery of the crystal defect part in the cut out single crystal with a focused ion beam device. Method. 2. A method for preparing a sample for observing crystal defects in a semiconductor single crystal, comprising the steps of forming a thin film of metal or photosensitive resin on the surface of the semiconductor single crystal, and subjecting the thin film to photolithography. And a step of forming a thin film pattern on the surface of the semiconductor single crystal, and referring to the pattern of the semiconductor single crystal on which the pattern is formed, a crystal defect in the semiconductor single crystal is referred to by a crystal defect observation device using an optical probe. Confirming and positioning, a step of cutting out a portion of the semiconductor single crystal containing the specified crystal defect with reference to the pattern, and a focused ion beam around the crystal defect part in the cut out single crystal. A method for preparing a sample for observing a crystal defect in a semiconductor single crystal, which comprises a step of removing with a device. 3. A method for preparing a sample for observing crystal defects in a semiconductor single crystal, comprising the steps of forming a thin film of metal or photosensitive resin on the surface of the semiconductor single crystal, and subjecting the thin film to photolithography. A step of forming a pattern of a thin film on the surface of the semiconductor single crystal by applying the pattern, a step of cleaving the semiconductor single crystal having the pattern formed thereon, and the cleaved semiconductor single crystal by a crystal defect observing device using an optical probe. A step of confirming and positioning a crystal defect in the semiconductor single crystal with reference to the pattern; a step of cutting out a portion containing the specified crystal defect in the semiconductor single crystal with reference to the pattern; A process for observing a crystal defect in a semiconductor single crystal, which comprises a step of removing the periphery of a crystal defect part in the crystal with a focused ion beam device. Method. 4. The thin film of metal is formed by vapor deposition of aluminum.
The method for preparing a sample for observing crystal defects in a semiconductor single crystal as described in 1. 5. A method for preparing a sample for observing crystal defects in a semiconductor single crystal, comprising the steps of forming a thin film of a photosensitive resin on the surface of the semiconductor single crystal, and subjecting the thin film to photolithography. A step of forming a thin film pattern on the surface of the semiconductor single crystal, a step of forming a step by etching the surface of the semiconductor single crystal, and a step of forming the stepped semiconductor single crystal with a crystal defect observation apparatus using an optical probe. , A step of confirming and positioning a crystal defect in the semiconductor single crystal while referring to the step, and a step of cutting out a portion including the specified crystal defect in the semiconductor single crystal with reference to the step A method for preparing a sample for observing crystal defects in a semiconductor single crystal, which comprises a step of removing the periphery of a crystal defect part in the single crystal with a focused ion beam apparatus. 6. A method for preparing a sample for observing crystal defects in a semiconductor single crystal, comprising the steps of forming a thin film of a photosensitive resin on the surface of the semiconductor single crystal, and subjecting the thin film to photolithography. A step of forming a thin film pattern on the surface of the semiconductor single crystal; a step of forming a step by etching the surface of the semiconductor single crystal; a step of cleaving the semiconductor single crystal having the step formed; A step of confirming and positioning a crystal defect in the semiconductor single crystal with reference to the step by a crystal defect observing device using an optical probe, and a step including a portion containing the specified crystal defect in the semiconductor single crystal. A step of cutting with reference to the step, and a step of removing the periphery of the crystal defect portion in the cut single crystal with a focused ion beam device. Crystal defect observation sample preparation method of the body single crystal. 7. The crystal defect observing device for confirming and locating the crystal defect is based on an infrared scattering tomography method, according to any one of claims 1 to 6. Method for preparing a sample for observing crystal defects in a semiconductor single crystal of. 8. The method for preparing a sample for crystal defect observation in a semiconductor single crystal according to claim 1, wherein the semiconductor single crystal is silicon. 9. A crystal defect in a semiconductor single crystal, comprising observing a crystal defect observation sample produced by the method according to claim 1 with a transmission electron microscope. Observation method.