JP3402891B2 - Electron source and display panel - Google Patents

Description

Detailed Description of the Invention

[0001]

The present invention relates to an electron source using the electron-emitting device, and a display panel having the electron source.

[0002]

2. Description of the Related Art Conventionally, there are known two types of electron-emitting devices, which are roughly classified into a thermoelectron-emitting device and a cold cathode electron-emitting device. The cold cathode electron emission device includes a field emission type (hereinafter referred to as “FE type”), a metal / insulating layer / metal type (hereinafter referred to as “MIM type”), a surface conduction type electron emission device, and the like. As an example of FE type, WP Dyke & WWD
oran, "Field Emission", Advance in Electron Physic
s, 8,89 (1956) or CASpindt, "Physical Properti
es of thin-film field emission cathodes with molyb
Denium cones ", J. Appl. Phys., 47, 5248 (1976) and the like are known.

In the MIM type, CAMead, "Operation of
Tunnel-Emission Devices ". J. Appl. Phys., 32, 646
Those disclosed in (1961) and the like are known.

As an example of the surface conduction electron-emitting device type,
MI Elinson, Radio Eng. Electron Phys., 10, 1290
(1965) and others.

In the surface conduction electron-emitting device, electrons are emitted by passing a current through a small area thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, one using a SnO ₂ thin film by the above-mentioned Erinson, one using an Au thin film (G. Dittmer: Thin Solid
Films, 9, 317 (1972)), In ₂ O ₃ / SnO ₂ thin film (M. Hartwell and CGFonstad: IEEE Trans. E)
D Conf., 519 (1983)), carbon thin film (Hiraki Araki et al .: Vacuum, Vol. 26, No. 1, p. 22 (1983)) and the like.

As a typical example of these surface conduction electron-emitting devices, the above-mentioned Hartwell device structure is schematically shown in FIG. In the figure, 1 is a substrate.
Reference numeral 4 denotes a conductive thin film, which is composed of a metal oxide thin film or the like formed by sputtering in an H-shaped pattern, and the electron emission portion 5 is formed by an energization process called energization forming described later. The element electrode spacing L in the figure is 0.5 to 1 mm,
W'is set to 0.1 mm.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion 5 is generally formed by subjecting the conductive thin film 4 to an energization process called energization forming in advance before the electron emission. there were. That is, the energization forming means that a direct current voltage or a very slow rising voltage is applied to both ends of the conductive thin film 4 to locally break, deform or alter the conductive thin film to have an electrically high resistance state. Is to form the electron emission portion 5 having the above-mentioned structure. The electron emitting portion 5 is a crack formed in a part of the conductive thin film 4, and electrons are emitted from the vicinity of the crack.

Since the surface conduction electron-emitting device described above has a simple structure and is easy to manufacture, it has an advantage that a large number of devices can be arrayed over a large area. Therefore, applied research on charged beam sources, display devices, and the like, which make use of this feature, has been conducted. As an example in which a large number of surface conduction electron-emitting devices are formed in an array, as will be described later, surface conduction electron-emission devices are arranged in parallel, which is called a ladder arrangement, and both ends of each device are connected by wiring (also called common wiring). , An electron source in which a large number of connected lines are arranged (for example, Japanese Patent Laid-Open No. 64-031).
332, JP-A-1-283749, and JP-A-2-257552.
etc).

In particular, in image forming apparatuses such as display devices, in recent years, flat panel display devices using liquid crystal have become popular in place of CRTs, but since they are not self-luminous, they must have a backlight. There are problems, and it has been desired to develop a self-luminous display device. An example of the self-luminous display device is an image forming device which is a display device in which a plurality of surface conduction electron-emitting devices are arranged and a phosphor that emits visible light by electrons emitted from the electron source is combined. For example, USP 5066883).

Generally, in an image forming apparatus using electrons, an image of an envelope for maintaining a vacuum atmosphere, an electron source for emitting electrons and its driving circuit, a phosphor which emits light by collision of electrons, and the like. A forming member, an accelerating electrode for accelerating electrons towards the image forming member, and a high voltage power supply are required. Further, in an image forming apparatus using a flat envelope such as a thin image display apparatus, a supporting column (spacer) may be used as the atmospheric pressure resistant structure.

In such an image forming apparatus, when accelerated electrons fly in the envelope, residual gas or the like in the vacuum atmosphere or on the phosphor is ionized, and the positive ions are directed to the electron source side by the acceleration electrode. The phenomenon of flying is generated. There is a problem in that the positive ions collide with an electron source, particularly an electron emitting element having an electron emitting portion, thereby deteriorating the electron source. Therefore, it is important to prevent the charged particles from directly colliding with the electron-emitting device in order to prolong the life of the electron source and improve the reliability. Therefore, as a configuration for preventing the deterioration of the electron source due to this phenomenon, a method using a plurality of control electrodes arranged in a slanted manner is USP415.
5028. However, the effect is not sufficient even by that method, and further prolongation of life and improvement of reliability are desired.

[0012]

OBJECTS OF THE INVENTION It is an object of The present invention can effectively prevent the collision charged particles directly to the electron-emitting device, highly reliable electron source in long life, and its <br / > Display panel that gives excellent quality images using an electron source
Is to get.

[0013]

The present invention has been made through intensive studies in order to solve the above-mentioned problems.

That is, according to the present invention, in an electron source to which an electron-emitting device formed on a substrate is connected by wiring, an insulating support is formed on the wiring, and the electron-emitting device is further covered on the support. An electron source having a shield plate having an electron opening through which electrons emitted from the device pass; an electron source and an accelerating electrode arranged to face the electron source. Provided is a display panel including at least a face plate having a phosphor; and further, an image forming apparatus in which a drive circuit for image formation is provided on the display panel.

In such an electron source of the present invention, the shielding plate is provided with a fixing opening different from the electronic opening.
And, it filled in the fixing opening, cured, fixed
And the shielding plate by using the paste and the insulating support member has engaged contact <br/>, said hardened fixing paste Rivet
The shield plate plays a role of
It is held on the body . Furthermore, it is preferable that the insulating support and the shielding plate are bonded to each other via a fixing paste applied to the fixing openings.

According to such an image forming apparatus of the present invention, the electrons emitted from the electron emitting portion of the electron emitting element are
Since an electric field formed by a pair of device electrodes is drawn to fly directly above the electron-emitting device, the electron-emitting device flies and is therefore not shielded by a shielding plate formed right above the electron-emitting region, and the acceleration electrode and Although it can reach the face plate on which the fluorescent substance is formed, positive ions generated by the influence of the fluorescent substance fly along the electric field (perpendicular to the substrate surface) applied to the electron source and the acceleration electrode. , Hit the shield. Since the electron emission portion can be protected in this way, the life of the electron source can be extended and the reliability can be improved. Therefore, in the case of the present invention, it is possible to effectively protect the electron-emitting device without the need to add a grid for tilting the electron deflection as disclosed in USP41555028.

[0017]

DETAILED DESCRIPTION OF THE INVENTION The present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing an example of the image forming apparatus of the present invention.

In FIG. 1, 1 is a substrate, and 2 and 3 are element electrodes, which are connected to X and Y direction wirings, respectively, which will be described later. Reference numeral 4 denotes a thin film (electroconductive thin film) including an electron emitting portion, which is electrically connected to the device electrodes 2 and 3. 73
Is a Y-direction wiring, and 72 is an X-direction wiring, which are insulated by the insulating film 11. Y-direction wiring 73, X-direction wiring 7
2. The film thickness of the insulating film 11 is in the range of several μm to several tens of μm. Reference numeral 14 is a shield plate, which is an electron-emitting portion of the electron-emitting device,
That is, it is formed so as to cover the electron emitting portion formed on the thin film including the electron emitting portion. This material is copper,
A metal material such as nickel or an alloy is desirable, but a member having an insulator surface coated with a conductor can be used. The thickness of the shielding plate is usually several tens to several hundreds of μm. Reference numeral 19 denotes an electron opening, through which electrons emitted from the electron emitting portion pass. With regard to the shape and size of the opening, an optimum shape can be used according to the shape of the image forming apparatus, and not only a circular shape but also an inertial circular shape, a polygonal shape, or the like can be adopted.
Also, regarding the size of the opening, an optimum value can be selected in the drive range of the device. Reference numeral 13 is a support made of an insulator. The height of the support can be an optimum height according to the shape of the image forming apparatus. It is preferably in the range of several tens of μm to several hundreds of μm. 20 is a shield plate 1
4 is a fixing opening for filling a thick film paste, which will be described later, for fixing 4 to the support 13. 22 is a shield plate 14
Is a thick film paste for fixing to the support 13.

FIG. 2 shows the procedure of the method for manufacturing the image forming apparatus of the present invention.

The method of manufacturing the image forming apparatus of the present invention will be described in detail below with reference to this drawing.

First, a conductive thin film made of a metal material is formed on a well-cleaned substrate 1, and the pattern is finely processed by photolithography to form device electrodes 2 and 3.
To form a device electrode pair.

The electrode pair is provided to improve electrical contact between the thin film including the electron emitting portion and the wiring. Usually, the thin film including the electron-emitting portion is a film that is extremely thin as compared with the conductor layer for wiring, and is therefore provided in order to avoid problems such as wettability and step retention. Therefore, when the conductor layer for wiring is formed of a thin film by the sputtering method or the like, the element electrodes do not necessarily have to be formed individually and can be formed at the same time as the wiring conductor. As a method for forming the electrode, a method using a vacuum system such as a vacuum vapor deposition method, a sputtering method, a plasma CVD method, or a thick film formed by printing and firing a thick film paste in which a metal component and a glass component are mixed in a vehicle. There is a printing method.

Next, the Y-direction wiring 73, the insulating film 11, and the X-direction wiring 72 are formed in a matrix. Since it is advantageous to reduce the electric resistance of these wirings, it is preferable to use a thick film printing method that can form a thick film. Therefore, it is preferable to form the wiring by using the conductive paste by the screen printing method. At this time, each element electrode and each wiring are connected. In addition, it is preferable that the insulating film is formed in multiple layers in order to improve the insulating property.

Next, a thin film made of the fine particle electron emitting material is formed, and then patterned by photolithography or the like to form the thin film 18 including the electron emitting portion (FIG. 2A).

Using the electron source completed as described above, a support made of an insulator is formed on the X-direction wiring. This is formed by a screen printing method using a thin wire made of an insulating material or an insulating paste (FIG. 2B).

The shield plate is a thin plate on the surface of which a conductor or a conductive film is formed, and has an opening formed at the same time by drilling by laser or etching, or by electroforming. The shielding plate according to the present invention preferably has a fixing opening as an opening used when fixing the shielding plate, in addition to the electronic opening which is an opening through which electrons pass. It is not particularly necessary that the fixing openings are provided in the same number as the openings through which the electrons pass, as shown in FIG. 2C. Good.

In order to fix the shield plate to the electron source, first, paste is filled in the fixing opening by screen printing (FIG. 2 (d)). Depending on the thickness of the shielding plate, it may be necessary to perform printing multiple times. The paste used does not have to be special, and may be conductive or insulating. After the paste is dried, the electron source and the shield plate are aligned so that the shield plate covers the electron emission portion, electrons can pass through the shield plate, and the fixing opening filled with the paste is the support. To be located above. The aligned electron source and the shielding plate are fixed so as not to shift, and then the paste is fired in a firing furnace so that the paste comes into close contact with the support and is cured and fixed. At this time, it is not necessary that the shielding plate and the hardened paste are in close contact with each other, and the hardened paste serves as a rivet, thereby serving to retain the shielding plate on the support. Therefore, the paste does not necessarily have a property of closely adhering to the shield plate, so that the selection range of the paste material is widened. When the screen printing method is used in this manner, it is possible to apply it evenly over a large area, so that the gap between the shield plate and the electron source substrate becomes more uniform, and the electric field distribution due to the provision of the shield plate is improved. The influence of can be reduced.

Further, the image forming apparatus will be described with reference to FIG. In the figure, 1 is a substrate, 5 is an electron emitting portion, 13
Is an insulating support, and 14 is a shielding plate. Further, 86 is a face plate, 84 is a fluorescent film, and 85 is a metal back. An image forming apparatus can be formed by arranging the electron source and the face plate so as to face each other through the support frame 82 and evacuating the inside. Although not shown, electrons are emitted from the electron emitting portion 15 by causing electrons to be emitted by using a drive circuit of the electron emitting element, and the electrons are made to reach the face plate through the electron opening portion to cause the phosphor to emit light. The image can be displayed. A voltage of several KV is applied to the metal back in order to accelerate electrons.

According to the present invention, a support of an insulator is formed on the wiring in the X direction, and a shield plate is formed on the support of insulative so as to cover the electron emission portion. The emitting element can be protected. On the other hand, the electrons emitted from the electron emitting portion can reach the acceleration electrode, which is the counter electrode, through the electron opening formed in the shield plate.

The basic structure of the surface conduction electron-emitting device used in the image forming apparatus of the present invention is roughly classified into a planar type and a vertical type.

First, the planar surface conduction electron-emitting device will be described.

FIG. 5 is a schematic view showing the structure of the flat surface conduction electron-emitting device of the present invention. FIG. 5 (a) is a plan view and FIG. 5 (b) is a sectional view.

In FIG. 5, 1 is a substrate, 2 and 3 are device electrodes, 4 is a conductive thin film, and 5 is an electron emitting portion.

As the substrate 1, quartz glass, glass having a reduced content of impurities such as Na, soda lime glass, a glass substrate on which SiO ₂ is deposited by a sputtering method, a ceramic substrate such as alumina, or the like can be used. .

The material of the opposing device electrodes 2 and 3 is as follows.
Common conductive materials can be used, such as Ni, Cr, A
Metals such as u, Mo, W, Pt, Ti, Al, Cu, Pd or alloys thereof; Pd, As, Ag, Au, Ru
It can be selected from a printed conductor composed of a metal such as O ₂ and Pd—Ag or a metal oxide and glass; a transparent conductor such as In ₂ O ₃ —SnO ₂ and a semiconductor material such as polysilicon.

The element electrode interval L, the element electrode length W, the shape of the conductive thin film 4, etc. are designed in consideration of the applied form. The element electrode distance L is preferably several thousand Å to several hundred μ
m is more preferable, and more preferably 1 μm to 100 μm in consideration of the voltage applied between the device electrodes.

The device electrode length W is in the range of several μm to several hundred μm in consideration of the resistance value of the electrode and the electron emission characteristics.
The film thickness d of the device electrodes 2 and 3 is in the range of 100Å to 1 μm.

Not only the structure shown in FIG.
It is also possible to have a structure in which the conductive thin film 4 and the opposing device electrodes 2 and 3 are laminated in this order on top.

It is preferable to use a fine particle film composed of fine particles as the conductive thin film 4 in order to obtain good electron emission characteristics. The film thickness is appropriately set in consideration of the step coverage to the device electrodes 2 and 3, the resistance value between the device electrodes 2 and 3, and the forming conditions described later, but usually in the range of several Å to several thousand Å. Preferably, more preferably 1
Range from 0Å to 500Å. The resistance value is such that Rs is 1 × 10 ² to 1 × 10 ⁷ Ω. Note that Rs is the resistance R of a thin film having a thickness t, a width w, and a length I, where R = Rs
A value that appears when (I / w) is set, and is represented by Rs = ρ / t where ρ is the resistivity of the thin film material. In the specification of the present application, the forming process will be described by taking an energization process as an example, but the forming process is not limited to this, and any method can be used as long as it is a method of forming a crack in a film to form a high resistance state. good.

The material forming the conductive thin film 4 is Pd, P
t, Ru, Ag, Au, Ti, In, Cu, Cr, F
e, Zn, Sn, Ta, W, Pb and other metals; PdO, S
Oxides such as nO ₂ , In ₂ O ₃ , PbO and Sb ₂ O ₃ ; Hf
Borides such as B ₂ , ZrB ₂ , LaB ₆ , CeB ₆ , YB ₄ , and GdB ₄ ; TiC, ZrC, HfC, TaC, SiC, W
Carbides such as C, nitrides such as TiN, ZrN and HfN, S
It is appropriately selected from semiconductors such as i and Ge and carbon.

The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure has a state in which the fine particles are individually dispersed and arranged, or a state in which the fine particles are adjacent to each other or overlap each other (some fine particles are aggregated). However, it also includes the case where an island-shaped structure is formed as a whole). The particle size of the fine particles is in the range of several Å to 1 μm, preferably in the range of 10 Å to 200 Å.

The electron emitting portion 5 is composed of a crack having a high resistance formed in a part of the conductive thin film 4, and depends on the film thickness, film quality, material of the conductive thin film 4 and a method such as energization forming described later. It will be what you did. Inside the electron emitting portion 5,
In some cases, conductive fine particles having a particle size of 1000 Å or less are included. The conductive fine particles contain some or all of the elements of the material forming the conductive thin film 4. The electron emitting portion 5 and the conductive thin film 4 in the vicinity thereof are
It may also contain carbon or carbon compounds.

Next, the vertical surface conduction electron-emitting device will be described.

FIG. 6 is a schematic diagram showing an example of a vertical surface conduction electron-emitting device of the surface conduction electron-emitting devices of the present invention.

In this figure, reference numeral 21 is a step forming portion. The substrate 1, the device electrodes 2 and 3, the conductive thin film 4, and the electron emitting portion 5 can be made of the same materials as in the case of the planar surface conduction electron emitting device described above. Step forming part 2
1 can be made of an insulating material such as SiO ₂ formed by a vacuum deposition method, a printing method, a sputtering method or the like. The film thickness of the step forming portion 21 corresponds to the device electrode spacing L of the flat surface conduction electron-emitting device described above, and is several hundred Å to several tens μ.
It can be in the range of m. This film thickness is set in consideration of the manufacturing method of the step forming portion and the voltage applied between the element electrodes, but is preferably in the range of several thousand Å to several μm.

The conductive thin film 4 is laminated on the device electrodes 2 and 3 after the device electrodes 2 and 3 and the step forming portion 21 are formed. The electron-emitting portion 5 is the step-forming portion 2 in FIG.
However, the shape and position are not limited to this, depending on the manufacturing conditions, forming conditions, and the like.

There are various methods for manufacturing the above-mentioned surface conduction electron-emitting device, and one example thereof is schematically shown in FIG.

An example of the manufacturing method will be described below with reference to FIGS.

1) The substrate 1 is thoroughly washed with a detergent, pure water, an organic solvent, etc., and after the element electrode material is deposited by the vacuum deposition method, the sputtering method, etc., the substrate 1 is deposited on the substrate 1 by, for example, the photolithography technique. The device electrodes 2 and 3 are formed (FIG. 5A).

2) An organic metal solution is applied to the substrate 1 provided with the device electrodes 2 and 3 to form an organic metal thin film. As the organic metal solution, a solution of an organic metal compound containing the metal of the material of the conductive film 4 described above as a main element can be used. The organic metal thin film is heat-fired and patterned by lift-off, etching or the like to form the conductive thin film 4 (FIG. 5B). Although the method of applying the organic metal solution has been described here, the method of forming the conductive thin film 4 is not limited to this, and a vacuum deposition method, a sputtering method, a chemical vapor deposition method,
It is also possible to use a dispersion coating method, a dipping method, a spinner method, or the like.

3) Subsequently, a forming process is performed.
As an example of this forming processing method, a method based on energization processing will be described. When electricity is applied between the device electrodes 2 and 3 by using a power source (not shown), an electron emitting portion 5 having a changed structure is formed at the site of the conductive thin film 4 (FIG. 5C). According to the energization forming, a site having a structural change such as local destruction, deformation or alteration is formed in the conductive thin film 4. That portion becomes the electron emitting portion 5. FIG. 8 shows an example of the voltage waveform of energization forming.

The voltage waveform is preferably a pulse waveform. To this end, the method shown in FIG. 8 (a) in which a pulse having a constant pulse peak value is continuously applied and the method shown in FIG. 8 (b) in which a voltage pulse is applied while increasing the pulse peak value are shown. There is a technique.

In FIG. 8A, T1 and T2 are the pulse width and pulse interval of the voltage waveform. Normally T1 is 1 μs to 1
0 ms and T2 are set in the range of 10 μs to 100 ms. The peak value of the triangular wave (peak voltage during energization forming) is appropriately selected according to the form of the surface conduction electron-emitting device. Under such conditions, for example, a voltage is applied for several seconds to several tens of minutes. The pulse waveform is not limited to the triangular wave, and a desired waveform such as a rectangular wave can be adopted.

T1 and T2 in FIG. 8B are the same as those in FIG.
It may be similar to that shown in (a). The peak value of the triangular wave (peak voltage during energization forming) can be increased by, for example, about 0.1 V step.

The end of the energization forming process can be detected by applying a voltage that does not locally break or deform the conductive thin film 4 during the pulse interval T2 and measure the current. For example, the device current flowing by applying a voltage of about 0.1 V is measured, the resistance value is obtained, and when the resistance is 1 MΩ or more, the energization forming is terminated.

4) It is preferable to carry out an activation treatment on the element which has finished forming. By performing the activation process, the device current If and the emission current Ie change remarkably.

The activation treatment can be carried out by repeating the application of the pulse in the atmosphere containing the gas of the organic substance, as in the energization forming. This atmosphere can be formed by using the organic gas remaining in the atmosphere when the inside of the vacuum container is evacuated by using, for example, an oil diffusion pump or a rotary pump, and is also sufficiently evacuated by an ion pump or the like. It can also be obtained by introducing a gas of a suitable organic substance into a vacuum. The preferable gas pressure of the organic substance at this time is different depending on the form of application, the shape of the vacuum container, the type of the organic substance, and the like, and is appropriately set depending on the case. Suitable organic substances include alkanes, alkenes, alkyne aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, aldehydes, ketones, amines, phenols, carboxylic acids, organic acids such as sulfonic acids, and the like. it can be mentioned, specifically, methane, ethane, C _n H _{2n + 2} represented by saturated hydrocarbons, ethylene, propylene C _n H _2n such unsaturated hydrocarbons represented by the composition formula such as propane , Benzene, toluene, methanol, ethanol, formaldehyde, acetaldehyde, acetone, methyl ethyl ketone, methyl amine,
Ethylamine, phenol, formic acid, acetic acid, propionic acid, etc. can be used. By this treatment, carbon or carbon compound is deposited on the device from the organic substances existing in the atmosphere,
The device current If and the emission current Ie change remarkably.

The termination of the activation process is determined by measuring the device current If and the emission current Ie. The pulse width, pulse interval, pulse peak value, etc. are set appropriately.

Carbon or carbon compound means HOPG
(Highly Oriented Pyrolytic Graphite), PG (Pyro
graphite such as lytic graphite) and GC (Glassy Carbon) (HOPG is a graphite with a nearly perfect crystal structure, PG is a graphite with a crystal grain of about 200Å and the crystal structure is slightly disordered, and GC is a crystal structure with a crystal grain of about 20Å. Of the carbon nanotubes), amorphous carbon (amorphous carbon and carbon containing a mixture of amorphous carbon and the fine crystals of graphite), etc., and the film thickness is preferably 500 Å or less, It is more preferable if it is 300 Å or less.

5) It is preferable that the electron-emitting device obtained through the activation process is subjected to a stabilization treatment. This treatment is preferably carried out when the partial pressure of the organic substance in the vacuum container is 1 × 10 ⁻⁸ Torr or less, preferably 1 × 10 ⁻¹⁰ Torr or less. The pressure in the vacuum container is 10 ^-6.5 to 10 ^-7 Torr
Is preferable, and 1 × 10 ⁻⁸ Torr or less is particularly preferable.

It is preferable that the vacuum evacuation device for evacuating the vacuum container does not use oil so that the oil generated from the device does not affect the characteristics of the element. Specifically, a vacuum exhaust device such as a sorption pump or an ion pump can be used. Further, when the inside of the vacuum container is evacuated, it is preferable to heat the entire vacuum container so that the organic substance molecules adsorbed on the inner wall of the vacuum container and the electron-emitting device can be easily exhausted. At this time, the vacuum evacuation condition in the heated state is preferably 80 to 200 ° C. for 5 hours or more, but is not particularly limited to this condition, and various conditions such as the size and shape of the vacuum container and the configuration of the electron-emitting device. Can vary depending on. The partial pressure of the organic substance is determined by measuring the partial pressure of the organic molecule having a mass number of 10 to 200, which has carbon and hydrogen as the main components, and integrating the partial pressures.

It is preferable to maintain the atmosphere at the time of driving after the stabilization process is the atmosphere at the end of the stabilization process, but the present invention is not limited to this, and if the organic substance is sufficiently removed, Even if the degree of vacuum itself is slightly lowered, it is possible to maintain sufficiently stable characteristics.

By adopting such a vacuum atmosphere, the deposition of new carbon or carbon compound can be suppressed,
As a result, the device current If and the emission current Ie are stabilized.

Various arrangements of electron-emitting devices can be adopted.

As an example, a large number of electron-emitting devices arranged in parallel are individually connected at both ends, a large number of rows of electron-emitting devices are arranged (referred to as a row direction), and a direction (column direction) orthogonal to this wiring is formed. There is a ladder-type arrangement in which electrons from the electron-emitting device are controlled and driven by a control electrode (also called a grid) arranged above the electron-emitting device. Separately, a plurality of electron-emitting devices are arranged in a matrix in the X and Y directions, and one of electrodes of the plurality of electron-emitting devices arranged in the same row is commonly connected to a wiring in the X direction. For example, the other of the electrodes of the plurality of electron-emitting devices arranged in the same column is commonly connected to the wiring in the Y direction. This is a so-called simple matrix arrangement. First, the simple matrix arrangement will be described in detail below.

An electron source substrate obtained by arranging a plurality of electron-emitting devices of the present invention in a matrix will be described with reference to FIG. In FIG. 9, 71 is an electron source substrate, and 72 is X.
Directional wiring 73 is a Y-direction wiring. 74 is a surface conduction electron-emitting device, and 75 is a wire connection. The surface conduction electron-emitting device 74 may be either the flat type or the vertical type described above.

The m number of X-direction wirings 72 are Dx1, Dx2,
..., Dxm, and can be composed of a conductive metal or the like formed by a vacuum deposition method, a printing method, a sputtering method, or the like. The wiring material, film thickness, and width are appropriately designed.
The Y-direction wiring 73 has n of Dy1, Dy2, ..., Dyn.
It is made of a book wiring and is formed similarly to the X-direction wiring 72. These m X-direction wirings 72 and n Y-direction wirings 7
An interlayer insulating layer (not shown) is provided between
Both are electrically separated (m and n are both positive integers).

The interlayer insulating layer (not shown) is composed of SiO ₂ or the like formed by a vacuum deposition method, a printing method, a sputtering method or the like. For example, it is formed in a desired shape on the entire surface or a part of the substrate 71 on which the X-direction wiring 72 is formed, and in particular, the film thickness, material, and so on to withstand the potential difference at the intersection of the X-direction wiring 72 and the Y-direction wiring 73. The manufacturing method is set. X direction wiring 72 and Y
The directional wirings 73 are respectively drawn out as external terminals.

A pair of electrodes (not shown) constituting the surface conduction electron-emitting device 74 are electrically connected by m X-direction wirings 72, n Y-direction wirings 73 and a connecting wire 75 made of a conductive metal or the like. Has been done.

The material forming the wiring 72 and the wiring 73, the material forming the connection 75, and the material forming the pair of element electrodes may be the same or different in some or all of the constituent elements. Good. These materials are appropriately selected, for example, from the above-mentioned material of the device electrode. When the material forming the element electrode and the wiring material are the same, the wiring connected to the element electrode can also be referred to as an element electrode.

A scanning signal applying means (not shown) for applying a scanning signal for selecting a row of the surface conduction electron-emitting devices 74 arranged in the X direction is connected to the X-direction wiring 72. On the other hand, the Y-direction wiring 73 is connected to a modulation signal generating means (not shown) for modulating each column of the surface conduction electron-emitting devices 74 arranged in the Y direction according to an input signal. The drive voltage applied to each electron-emitting device is supplied as the difference voltage between the scanning signal and the modulation signal applied to that device.

In the above structure, individual elements can be selected by using simple matrix wiring and can be driven independently.

FIG. 10 and FIG. 11 show an image forming apparatus constructed by using an electron source having such a simple matrix arrangement.
And FIG. 12 will be described. FIG. 10 is a schematic diagram showing an example of a display panel of the image forming apparatus, and FIG.
It is a schematic diagram of the fluorescent film used for the image forming apparatus of No. 0.
FIG. 12 is a block diagram showing an example of a drive circuit for displaying according to an NTSC television signal.

In FIG. 10, 71 is an electron source substrate on which a plurality of electron-emitting devices are arranged, 81 is a rear plate on which the electron source substrate 71 is fixed, and 86 is a fluorescent film 84 on the inner surface of the glass substrate 83.
And a metal back 85 and the like. Reference numeral 82 denotes a support frame, and the rear plate 81 and the face plate 86 are connected to the support frame 82 by using frit glass or the like. Reference numeral 88 denotes an envelope, which is fired in the atmosphere or nitrogen in the temperature range of 400 to 500 ° C. for 10 minutes or more and sealed.

Reference numeral 74 corresponds to the electron emitting portion in FIG. Reference numerals 72 and 73 are an X-direction wiring and a Y-direction wiring connected to a pair of device electrodes of the surface conduction electron-emitting device.

The envelope 88 is composed of the face plate 86, the support frame 82 and the rear plate 81 as described above. Since the rear plate 81 is provided mainly for the purpose of reinforcing the strength of the electron source substrate 71, if the electron source substrate 71 itself has sufficient strength, the separate rear plate 81 can be omitted. That is, the support frame 82 is directly attached to the substrate 71, and the face plate 86, the support frame 82, and the substrate 7 are sealed.
The envelope 88 may be configured with one. On the other hand, by installing a support body (not shown) called a spacer (atmospheric pressure resistant support member) between the face plate 86 and the rear plate 81, the envelope 88 having sufficient strength against atmospheric pressure.
Can also be configured.

FIG. 11 is a schematic diagram showing a fluorescent film. In the case of monochrome, the fluorescent film 84 can be composed of only the fluorescent material. In the case of a color phosphor film, it can be composed of a black member 91 called a black stripe or a black matrix and a phosphor 92 depending on the arrangement of the phosphors. In the case of color display, the purpose of providing the black stripes and the black matrix is to make the color-separated portion between the phosphors 92 of the three primary color phosphors black so as to make the color mixture inconspicuous and to contrast due to external light reflection. It is to suppress the decrease of. As the material of the black stripe, in addition to the commonly used material containing graphite as a main component, any material that transmits and reflects light little can be used.

As a method for applying the phosphor to the glass substrate 83, a precipitation method, a printing method or the like can be adopted regardless of monochrome or color. A metal back 85 is usually provided on the inner surface side of the fluorescent film 84. The purpose of providing a metal back is
Of the light emitted from the phosphor, the light emitted to the inner surface side is applied to the face plate 8
Improve the brightness by mirror-reflecting to the 6 side, act as an electrode for applying an electron beam accelerating voltage, protect the phosphor from damage due to collision of negative ions generated in the envelope, etc. Is. In the metal back, after the phosphor film is produced, the inner surface of the phosphor film is smoothed (usually called “filming”),
After that, Al can be produced by depositing Al using vacuum deposition or the like.

The face plate 86 further includes the fluorescent film 8
In order to improve the conductivity of No. 4, a transparent electrode (not shown) may be provided on the outer surface side (the glass substrate 83 side) of the fluorescent film 84.

When performing the above-mentioned sealing, in the case of color, it is necessary to associate each color phosphor with the electron-emitting device.
Sufficient alignment is essential.

The image forming apparatus shown in FIG. 10 is manufactured, for example, as follows.

The envelope 88 is evacuated through an exhaust pipe (not shown) by an oil-free exhaust device such as an ion pump or a sorption pump while appropriately heating, as in the above-described stabilization process, and 1 × 10 5. After sealing in an atmosphere with a vacuum degree of about ^-7 Torr with a sufficiently small amount of organic substances, sealing is performed. A getter process can be performed to maintain the degree of vacuum after the envelope 88 is sealed. This is the envelope 88
Immediately before or after the sealing of (1) or (2) is performed, the getter arranged at a predetermined position (not shown) in the envelope 88 is heated by heating using resistance heating or high frequency heating to form a vapor deposition film. Processing. The getter is usually mainly composed of Ba or the like, and due to the adsorption action of the deposited film, for example, 1 ×
The degree of vacuum is maintained at 10 ⁻⁵ or 1 × 10 ⁻⁷ Torr.

Next, with reference to FIG. 12, a configuration example of a drive circuit for performing television display based on an NTSC television signal on a display panel constructed by using an electron source having a simple matrix arrangement will be described. . In FIG. 12, 101 is an image display panel, 102 is a scanning circuit,
Reference numeral 103 is a control circuit, and 104 is a shift register. 1
Reference numeral 05 is a line memory, 106 is a sync signal separation circuit, 10
Reference numeral 7 is a modulation signal generator, and Vx and Va are DC voltage sources.

The display panel 101 includes terminals Dox1 to Dox1.
It is connected to an external electric circuit via oxm, terminals Doy1 to Doyn, and high-voltage terminal Hv. To the terminals Dox1 to Doxm, an electron source provided in the display panel, that is, a group of surface conduction electron-emitting devices that are matrix-wired in a matrix of m rows and n columns are sequentially driven row by row (n elements). Scanning signal is applied.

A modulation signal for controlling the output electron beam of each element of the surface conduction electron-emitting devices of one row selected by the scanning signal is applied to the terminals Doy1 to Doyn. The high-voltage terminal Hv is supplied with a direct-current voltage of, for example, 10 kV from the direct-current voltage source Va, which imparts sufficient energy to excite the phosphor to the electron beam emitted from the surface conduction electron-emitting device. This is the acceleration voltage for

The scanning circuit 102 will be described. The circuit is provided with m switching elements therein (schematically shown by S1 to Sm in the figure). Each switching element selects either the output voltage of the DC voltage source Vx or 0 V (ground level), and is electrically connected to the terminals Dox1 to Doxm of the display panel 101. Each switching element of S1 to Sm is a control circuit 1
It operates on the basis of the control signal Tscan output by 03, and can be configured by combining switching elements such as FETs.

In the case of the DC voltage source Vx, the drive voltage applied to the non-scanned element is equal to or lower than the electron emission threshold voltage based on the characteristics (electron emission threshold voltage) of the surface conduction electron-emitting element in this example. It is set to output such a constant voltage.

The control circuit 103 has a function of matching the operation of each unit so that an appropriate display is performed based on an image signal input from the outside. The control circuit 103 generates control signals Tscan, Tsft, and Tmry for each unit based on the synchronization signal Tsync sent from the synchronization signal separation circuit 106.

The sync signal separation circuit 106 is a circuit for separating a sync signal component and a luminance signal component from an NTSC television signal input from the outside, and uses a general frequency separation (filter) circuit or the like. Can be configured. The sync signal separated by the sync signal separation circuit 106 is composed of a vertical sync signal and a horizontal sync signal, but is shown here as a Tsync signal for convenience of description. The luminance signal component of the image separated from the television signal is represented as a DATA signal for convenience. The DATA signal is input to the shift register 104.

The shift register 104 is for serial / parallel conversion of the DATA signal serially input in time series for each line of the image, and is based on the control signal Tsft sent from the control circuit 103. (Ie, the control signal Tsft is applied to the shift register 10).
It can be said that it is a shift clock of 4). The serial / parallel converted image data for one line (corresponding to driving data for n electron-emitting devices) is output from the shift register 104 as n parallel signals Id1 to Idn.

The line memory 105 is a storage device for storing data for one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate in accordance with the control signal Tmry sent from the control circuit 103. The stored contents are output as I′d1 to I′dn, and the modulation signal generator 1
It is input to 07.

The modulation signal generator 107 outputs the image data I'd
1 to I′dn is a signal source for appropriately driving and modulating each of the surface conduction electron-emitting devices, and an output signal of the signal source is supplied to the display panel 101 through terminals Doy1 to Doyn.
Is applied to the surface conduction electron-emitting device inside.

The electron-emitting device of the present invention has the following basic characteristics with respect to the emission current Ie. That is, the electron emission has a clear threshold voltage Vth, and the electron emission occurs only when a voltage higher than Vth is applied. For a voltage equal to or higher than the electron emission threshold, the emission current also changes according to the change in the voltage applied to the device. From this, when a pulsed voltage is applied to this element, for example, no electron emission occurs even if a voltage below the electron emission threshold is applied, but when a voltage above the electron emission threshold is applied Beam is output. At that time, the intensity of the output electron beam can be controlled by changing the peak value Vm of the pulse. Further, by changing the pulse width Pw, it is possible to control the total amount of charges of the output electron beam.

Therefore, as a method of modulating the electron-emitting device according to the input signal, a voltage modulation method, a pulse width modulation method, or the like can be adopted. When carrying out the voltage modulation method, as the modulation signal generator 107, a circuit of the voltage modulation method is used that generates a voltage pulse of a fixed length and appropriately modulates the peak value of the pulse according to the input data. be able to.

When implementing the pulse width modulation method,
As the modulation signal generator 107, it is possible to use a circuit of a pulse width modulation system that generates a voltage pulse having a constant crest value and appropriately modulates the width of the voltage pulse according to input data.

The shift register 104 and the line memory 10
The digital signal type 5 and the analog signal type 5 can be adopted. This is because the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 106 into a digital signal.
A D converter may be provided. In relation to this, the circuit used for the modulation signal generator 107 is slightly different depending on whether the output signal of the line memory 105 is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal, the modulation signal generator 107 is, for example, a D / A
A conversion circuit is used, and an amplification circuit or the like is added as necessary. In the case of the pulse width modulation method, the modulation signal generator 107 includes, for example, a high-speed oscillator and a counter that counts the number of waves output by the oscillator, and a comparator that compares the output value of the counter with the output value of the memory. A circuit that combines (comparators) is used. If necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator to the drive voltage of the surface conduction electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, the modulation signal generator 107 may be an amplifier circuit using, for example, an operational amplifier, and a level shift circuit or the like may be added if necessary. In the case of the pulse width modulation method, for example, a voltage controlled oscillation circuit (VCO) can be adopted, and an amplifier for voltage amplification up to the drive voltage of the surface conduction electron-emitting device can be added if necessary.

In the image display device of the present invention having such a structure, each electron-emitting device has a terminal outside the container Dox.
Electrons are emitted by applying a voltage through 1 to Doxm and Doy1 to Doyn. A high voltage is applied to the metal back 85 or a transparent electrode (not shown) via the high voltage terminal Hv to accelerate the electron beam. The accelerated electrons are
It collides with the fluorescent film 84 and emits light to form an image.

The configuration of the image forming apparatus described above is an example, and various modifications can be made based on the technical idea of the present invention. As for the input signal, the NTSC system is mentioned, but the input signal is not limited to this, and PAL, SEC
In addition to the AM system and the like, a TV signal (for example, a high-definition TV such as the MUSE system) system including a larger number of scanning lines can be adopted.

The image forming apparatus of the present invention can be used not only as a display apparatus for television broadcasting, a display apparatus such as a TV conference system or a computer, but also as an image forming apparatus as an optical printer constituted by using a photosensitive drum or the like. Can be used.

[0102]

The present invention will be described in detail below with reference to examples, but the present invention is not limited to these examples.

Example 1 An electron source substrate having the structure shown in FIG. 1 was produced by the procedure shown in FIG.

First, a metal thin film was formed on the well-cleaned substrate 1 made of soda-lime glass by the sputtering method, and then the device electrodes 2 and 3 were formed by the photolithographic etching method. The material is a thin film of Ni with a thickness of 1000Å with Ti of 50Å thickness as an undercoat.
And

Next, the Y-direction wiring 73 was formed so as to be connected to the device electrode 3. The Y-direction wiring 73 is a printed wiring having a width of 100 μm and a thickness of 10 μm, which is patterned by screen printing using silver paste, and subsequently baked (baking temperature is 550 ° C., peak holding time is about 10 minutes). Next, the insulating film 11 was formed by printing a paste containing glass as a main component and baking the paste. Note that printing and firing were performed twice each in order to improve the insulation between the upper and lower parts. The firing temperature was 550 ° C. and the peak holding time was 10 minutes. The film thickness after printing and baking was 30 μm.

Next, the X-direction wiring 72 was formed on the insulating film 11 so as to be connected to the device electrode 2. The formation method was the same as that for the Y direction wiring, and the width was 300 μm and the thickness was 20 μm.

Next, a thin film made of a fine particle electron emitting material is formed by coating and baking an organic metal solution, and then patterned by photolithography or the like to form a thin film 4 including an electron emitting portion, and an electron source is completed (see FIG. Two
(A)).

An insulating support is formed on the wiring in the X direction by a screen printing method with an insulating paste to have a width of 200 μm.
It was formed with a height of 150 μm (FIG. 2B).

Next, fixing the shield plate will be described with reference to FIG.

In this example, the shielding plate is made of Cu having a thickness of 50 μm.
The film has an electronic opening with 220 μm on the long side and 7 μ on the short side.
A rectangular shape of m was used, and the fixing opening was processed into a circular shape of φ100 μm (FIG. 13A). The paste used for forming the support is printed and filled in a pattern slightly larger than the opening only on the fixing opening by screen printing from one surface of the shielding plate. After repeating printing and drying until the filling is completed, the same printing is performed once from the other surface to obtain the state shown in FIG. 13B.

After the shielding plate covers the electron emission portion and the alignment is performed so that the electron opening is at the center of the support, the paste is fired to bring the paste into close contact with the support.
It was cured and the shielding plate was fixed (Fig. 13 (c)).

As described above, since the screen printing method was applied to apply the fixing means to the shielding plate when fixing the shielding plate,
It became possible to apply quickly and uniformly over a large area.

Next, an example in which an image forming apparatus is constructed using the electron source of the simple matrix wiring manufactured as described above will be described with reference to FIG.

A face plate 86 having a metal back formed on the phosphor screen is placed 5 mm above the electron source substrate 71, which is formed with a large number of surface conduction electron-emitting devices before forming, via a support frame 82. Support frame,
Frit glass is applied to the bonding part of the electron source substrate, and the temperature is 400 ° C to 500 ° C in the air or nitrogen atmosphere for 10
It was sealed by baking for more than a minute. In FIG. 14, 7
Reference numerals 3 and 72 are wirings in the X and Y directions, respectively.

In the case of monochrome, the fluorescent film 84 is composed of only the fluorescent material, but in this embodiment, the fluorescent material employs a stripe-shaped black member (see FIG. 11A, hereinafter referred to as black stripe). A black stripe was formed on the substrate, and each phosphor was applied to the gap to form a phosphor film. As the material of the black member, a material having graphite as a main component, which is commonly used, was used. A slurry method was used to apply the phosphor to the substrate.

Further, a metal back 8 is usually provided on the fluorescent film.
5 are provided. The metal back was produced by performing a smoothing treatment (usually called filming) on the inner surface of the fluorescent film after producing the fluorescent film, and then vacuum-depositing Al.

The face plate may be provided with a transparent electrode (not shown) between the fluorescent film and the substrate in order to further enhance the conductivity of the fluorescent film, but in this embodiment, only a metal back is sufficient. Since conductivity was obtained, it was omitted.

In the case of the above-mentioned sealing, in the case of color, the phosphors of the respective colors and the electron-emitting devices must correspond to each other, so that sufficient alignment was performed. After the atmosphere in the glass container completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), after reaching a sufficient degree of vacuum,
A voltage was applied between the device electrodes of the electron-emitting device through the wiring extending to the outside of the container and the Y-direction wiring, and the thin film for forming the electron-emitting region was energized (forming process) to fabricate the electron-emitting unit. FIG. 8 shows the voltage waveform of the forming process.

In FIG. 8, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 millisecond and T2 is T2.
Is 10 milliseconds, the peak value of the triangular wave (peak voltage during forming) is 14 V, and the forming process is about 1 ×.
It was performed for 60 seconds under a vacuum atmosphere of 10 ⁻⁶ Torr.

In the electron-emitting portion thus produced, fine particles containing palladium element as a main component were dispersed and arranged, and the average particle diameter of the fine particles was 30Å.

Next, at a vacuum degree of about 1 × 10 ^-6 Torr, an unillustrated exhaust pipe was heated by a gas burner to be welded to seal the envelope.

Finally, in order to maintain the degree of vacuum after sealing,
Getter processing was performed. This is a process of heating a getter placed at a predetermined position (not shown) in the image forming apparatus by a heating method such as resistance heating or high-frequency heating immediately before or after sealing to form a vapor deposition film. Is. The getter usually has Ba as a main component, and due to the adsorption action of the deposited film, for example, 1 × 10 ⁻⁵ Torr to 1 × 1.
The vacuum degree of 0 ^-7 Torr is maintained.

In the image forming apparatus of the present invention completed as described above, a scanning signal and a modulation signal are supplied to each surface conduction electron-emitting device through an X-direction wiring and a Y-direction wiring by a signal generating means (not shown). Electrons are emitted by applying each, and a high voltage of several KV or more is applied to the metal back through a high voltage terminal (not shown) extending from the metal back to the outside of the vacuum container to accelerate the electron beam and collide with the fluorescent film. Then, the image was displayed by exciting and emitting light. The shield plate is maintained at 0V potential by a wiring means (not shown).

In the image display device manufactured according to this embodiment, the position of the shielding plate is set and the potential is also set so as not to be affected by the charged particles that cause the deterioration and destruction of the electron-emitting device as in the conventional case. Has been done. Therefore, the electrons emitted from the electron-emitting device can reach the face plate, but the charged particles cannot reach the electron-emitting device, so that damage to the electron-emitting device by such charged particles can be avoided.

Example 2 An electron source substrate on which a support has been formed was formed in the same manner as in Example 1. In this embodiment, five fixing openings were used to fix the shield plate. As shown in FIG. 15, there are a total of five positions, one at a corner and one at a center.

Thereafter, as in the first embodiment, the paste is filled in the fixing openings by screen printing, and after drying, the electron source substrate and the shield plate are aligned with each other and fired to form an electron having a shield plate. The source substrate is completed.

Using this electron source substrate, a supporting frame and a face plate were sealed and a vacuum container was formed in the same manner as in Example 1.
The inside was exhausted and forming was performed. After that, a getter process is performed to seal the vacuum container. Finally, the driving device was connected to this device to display an image.

In the shield plate used in this example, the number of holes can be set to +5 electron-emitting devices at the time of processing, and cost and processing time can be minimized as compared with other cases. became.

[0129]

As described above, according to the present invention,
When fixing the shield plate to the electron source substrate, the gap between the shield plate and the electron source substrate becomes more uniform, and the influence of the shield plate on the electric field distribution can be reduced. Furthermore, the introduction of the shielding plate eliminates the influence of charged particles on the electron-emitting device, so that the life of the image display device can be extended.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing a configuration of an example of an electron source of the present invention.

FIG. 2 is a process drawing showing a manufacturing procedure of the electron source of FIG.

FIG. 3 is a schematic cross-sectional view showing the flight of electrons in the image forming apparatus of the present invention.

FIG. 4 is a schematic plan view showing a configuration example of a conventional surface conduction electron-emitting device.

5A and 5B are schematic diagrams showing a configuration of a planar surface conduction electron-emitting device, in which FIG. 5A is a plan view and FIG. 5B is a sectional view.

FIG. 6 is a schematic cross-sectional view of a vertical surface conduction electron-emitting device.

FIG. 7 is a process chart showing a procedure in an example of a method of manufacturing a surface conduction electron-emitting device.

FIG. 8 is a waveform diagram showing an example of two voltage waveforms in an energization forming process that can be adopted when manufacturing a surface conduction electron-emitting device.

FIG. 9 is a schematic view showing an example of a matrix arrangement type electron source substrate.

FIG. 10 is a schematic view showing an example of a display panel of the image forming apparatus of the present invention.

FIG. 11 is a schematic view showing an example of a fluorescent film.

FIG. 12 is a block diagram showing an example of a drive circuit for performing display according to an NTSC television signal on the image forming apparatus.

FIG. 13 is a process diagram illustrating fixing of the shielding plate to the electron source substrate according to the first embodiment.

FIG. 14 is a schematic diagram of a cut model of the image forming apparatus according to the first exemplary embodiment.

FIG. 15 is a schematic diagram of a cut model of the image forming device according to the second embodiment.

[Explanation of symbols]

1 substrate 2-3 element electrodes 4 Conductive thin film 5 Electron emission part 10 Fine wire insulation layer 11 insulating layer 13 Support 14 Shield 18 Conductive thin film 19 Electronic opening 21 Fixing opening 22 Thick film paste 71 electron source substrate 72 X direction wiring 73 Y direction wiring 74 Surface conduction electron-emitting device 75 connection 81 Rear plate 82 Support frame 83 glass substrate 84 Fluorescent film 85 metal back 86 face plate 88 envelope 91 Black member 92 phosphor 101 display panel 102 scanning circuit 103 control circuit 104 shift register 105 line memory 106 Sync signal separation circuit 107 Modulation signal generator

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁷ Identification code FI H01J 29/82 H01J 31/12 C 31/12 1/30 E (56) Reference JP-A-7-235257 (JP, A) JP 61-279030 (JP, A) JP 7-451485 (JP, A) JP 6-28987 (JP, A) JP 1-286241 (JP, A) JP 3-196442 (JP, A) JP-A-8-338276 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01J 1/94 H01J 1/30 -1/316 H01J 1/52 H01J 9 / 00-9/18 H01J 29/06 H01J 29/82 H01J 31/12-31/15

Claims (3)

(57) [Claims] 1. A electron source the electron emission device formed on a substrate is hardwired, the is insulating support on the wiring formation, covers the electron-emitting devices on said insulating support, said An electron emission element is formed with a shield plate having an electron opening through which electrons emitted from the electron emission element pass, and the shield plate is provided with a fixing opening different from the electron opening. , Fixing paste filled in the fixing opening and cured
It is engaged against the the insulating support and the shield plate with the
And the hardened fixing paste acts as a rivet.
Thereby, the electron source , wherein the shield plate is retained on the insulating support . 2. The electron source according to claim 1, wherein the filling of the paste is performed by a screen printing method. 3. A display panel comprising at least the electron source according to claim 1 or 2, and a face plate having an accelerating electrode and a phosphor arranged facing the electron source.