JP3400558B2 - 銅および銅合金のエッチング液 - Google Patents
銅および銅合金のエッチング液Info
- Publication number
- JP3400558B2 JP3400558B2 JP21073294A JP21073294A JP3400558B2 JP 3400558 B2 JP3400558 B2 JP 3400558B2 JP 21073294 A JP21073294 A JP 21073294A JP 21073294 A JP21073294 A JP 21073294A JP 3400558 B2 JP3400558 B2 JP 3400558B2
- Authority
- JP
- Japan
- Prior art keywords
- copper
- etching
- etching solution
- persulfate
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 14
- 239000010949 copper Substances 0.000 title claims description 14
- 229910000881 Cu alloy Inorganic materials 0.000 title claims description 10
- 238000005530 etching Methods 0.000 claims description 38
- 239000000243 solution Substances 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 13
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 12
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 11
- 150000003918 triazines Chemical class 0.000 claims description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 4
- 150000002460 imidazoles Chemical class 0.000 claims description 4
- 150000003222 pyridines Chemical class 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000007788 roughening Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- WOXFMYVTSLAQMO-UHFFFAOYSA-N 2-Pyridinemethanamine Chemical compound NCC1=CC=CC=N1 WOXFMYVTSLAQMO-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 description 1
- NUKYPUAOHBNCPY-UHFFFAOYSA-N 4-aminopyridine Chemical compound NC1=CC=NC=C1 NUKYPUAOHBNCPY-UHFFFAOYSA-N 0.000 description 1
- NJQHZENQKNIRSY-UHFFFAOYSA-N 5-ethyl-1h-imidazole Chemical compound CCC1=CNC=N1 NJQHZENQKNIRSY-UHFFFAOYSA-N 0.000 description 1
- HPSJFXKHFLNPQM-UHFFFAOYSA-N 5-propyl-1h-imidazole Chemical compound CCCC1=CNC=N1 HPSJFXKHFLNPQM-UHFFFAOYSA-N 0.000 description 1
- QGNWQOHCEMWYPG-UHFFFAOYSA-N 6-ethyl-1h-triazine-2,4-diamine Chemical compound CCC1=CC(N)=NN(N)N1 QGNWQOHCEMWYPG-UHFFFAOYSA-N 0.000 description 1
- FCOYDKPBHPALQK-UHFFFAOYSA-N 6-methyl-1h-triazine-2,4-diamine Chemical compound CC1=CC(N)=NN(N)N1 FCOYDKPBHPALQK-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 1
- 102220491117 Putative postmeiotic segregation increased 2-like protein 1_C23F_mutation Human genes 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- OBESRABRARNZJB-UHFFFAOYSA-N aminomethanesulfonic acid Chemical compound NCS(O)(=O)=O OBESRABRARNZJB-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- ZCHPOKZMTJTNHI-UHFFFAOYSA-L barium(2+);sulfonatooxy sulfate Chemical compound [Ba+2].[O-]S(=O)(=O)OOS([O-])(=O)=O ZCHPOKZMTJTNHI-UHFFFAOYSA-L 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229960004979 fampridine Drugs 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- TXQWFIVRZNOPCK-UHFFFAOYSA-N pyridin-4-ylmethanamine Chemical compound NCC1=CC=NC=C1 TXQWFIVRZNOPCK-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/103—Other heavy metals copper or alloys of copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/14—Nitrogen-containing compounds
- C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
- H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
Description
面の除錆および粗面化に有用なエッチング液に関する。
エッチングレジストやソルダーレジスト等の樹脂で被覆
する際、密着性を向上させるために、銅表面を粗面化す
ることが行なわれている。この粗面化の方法には、バフ
研磨、スクラブ研磨等の機械研磨と、マイクロエッチン
グと呼ばれる化学研磨とがあるが、細線パターンを有す
る基板の処理には化学研磨が利用されている。
ング液が使用されてきたが、このエッチング液にはエッ
チングスピードが遅い、研磨後の表面が酸化されやすい
という問題があった。そこで、高価ではあるがこれらの
問題を解消しうる硫酸・過酸化水素系エッチング液が使
用されるようになってきている。
的な利点から過硫酸塩系エッチング液の需要も多く、過
硫酸塩系エッチング液で前記問題を解決することが切望
されている。
するべくなされたものであり、過硫酸塩を含む水溶液か
らなるエッチング液であって、イミダゾール、イミダゾ
ール誘導体、ピリジン誘導体、トリアジンおよびトリア
ジン誘導体よりなる群れから選ばれた少なくとも1種を
含有することを特徴とする銅および銅合金のエッチング
液に関する。
過硫酸アンモニウム、過硫酸カリウム、過硫酸ナトリウ
ム、過硫酸バリウム、過硫酸リチウム等があげられる。
過硫酸塩の濃度は、通常50g/リットル以上で過硫酸
塩が溶解可能な範囲であればよく、さらに好ましくは5
0〜250g/リットルである。前記濃度が50g/リ
ットル未満では充分なエッチング力を与えられず、表面
に水酸化銅が残った状態になりやすい。
ピードを上げ、かつエッチング後の表面の防錆のため、
イミダゾール、イミダゾール誘導体、ピリジン誘導体、
トリアジンおよびトリアジン誘導体よりなる群れより選
ばれた少なくとも1種が添加される。前記イミダゾール
誘導体の具体例としては、例えば2−メチルイミダゾー
ル、2−エチルイミダゾール、2−プロピルイミダゾー
ル、2−アミノイミダゾール、4−メチルイミダゾー
ル、4−エチルイミダゾール、4−プロピルイミダゾー
ル等があげられる。前記ピリジン誘導体の具体例として
は、例えば2−メチルピリジン、2−アミノピリジン、
2−アミノメチルピリジン、2−カルボキシピリジン、
4−メチルピリジン、4−アミノピリジン、4−アミノ
メチルピリジン等があげられる。前記トリアジン誘導体
の具体例としては、例えば2、4−ジアミノ−6−メチ
ルトリアジン、2、4−ジアミノ−6−エチルトリアジ
ン等があげられる。前記イミダゾール等の濃度は、エッ
チングスピードや液中での溶解性の点から0.1〜10
g/リットルが好ましく、0.5〜10g/リットルが
さらに好ましい。
塩の分解を抑制するためにアミド硫酸または脂肪族スル
ホン酸を添加してもよい。前記脂肪族スルホン酸として
は、例えばメチルスルホン酸、アミノスルホン酸、アミ
ノメチルスルホン酸、アミノエチルスルホン酸等があげ
られる。前記スルホン酸の濃度は、溶解性の点から1〜
100g/リットルが好ましく、1〜50g/リットル
がさらに好ましい。
添加剤、例えば液の表面張力を下げるためのフッ素系、
非イオン系等の界面活性剤、エッチングスピ−ドを安定
させるのための硫酸、リン酸等の無機酸を添加してもよ
い。
定はないが、例えば処理される銅または銅合金にスプレ
ーして吹き付ける方法、銅または銅合金をエッチング液
中に浸漬コンベア等を使って浸漬する方法等があげられ
る。
学研磨等に広く使用することができる。例えばプリント
基板関連では多層板の製造における銅面の黒化処理の前
の除錆および粗面化、エッチングレジストやソルダーレ
ジストの密着性を向上させるための粗面化、はんだ付け
性を向上させるための除錆および粗面化等に使用するこ
とができる。特に、最近のフロンによる後洗浄を不要に
した活性の弱いフラックスを用いるはんだ付けでは、銅
の表面状態のはんだ付け性に与える影響が大きいため、
除錆および粗面化と防錆とを同時に行なうことのできる
本発明のエッチング液が有効である。また、その他銅や
銅合金を使用している種々の材料の除錆や粗面化に使用
することができる。
た。次に、えられたエッチング液が撹拌されている25
℃の浴中に、プリント基板用両面銅張積層板(FR−
4)を1分間浸漬し、エッチングスピードを調べた。さ
らにエッチング後の積層板を40℃・95%RHの環境
に24時間放置し、発錆を目視により調べた。結果を表
1に示す。表1の発錆状態を示す欄の○は発錆が認めら
れない、△はわずかに発錆が認められる、×はかなり発
錆が認められることを示す。
た。次に、エッチング作業中の液の安定性を調べるた
め、エッチング液に銅10gを溶解させ、その直後の液
と24時間保存後の液のエッチングスピードを、実施例
1と同様にして調べた。結果を表2に示す。
塩を主成分とするタイプでありながら、エッチングスピ
ードが速く、エッチング後の表面を防錆する作用を有す
るものである。
Claims (2)
- 【請求項1】 過硫酸塩を含む水溶液からなるエッチン
グ液であって、イミダゾール、イミダゾール誘導体、ピ
リジン誘導体、トリアジンおよびトリアジン誘導体より
なる群れから選ばれた少なくとも1種を含有することを
特徴とする銅および銅合金のエッチング液。 - 【請求項2】 アミド硫酸または脂肪族スルホン酸を含
有することを特徴とする請求項1記載の銅および銅合金
のエッチング液。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21073294A JP3400558B2 (ja) | 1994-08-12 | 1994-08-12 | 銅および銅合金のエッチング液 |
TW083108715A TW287208B (ja) | 1994-08-12 | 1994-09-22 | |
CN95105687A CN1078629C (zh) | 1994-08-12 | 1995-06-28 | 铜及铜合金的浸蚀液 |
US08/510,299 US5700389A (en) | 1994-08-12 | 1995-08-02 | Etching solution for copper or copper alloy |
EP95112324A EP0696651A1 (en) | 1994-08-12 | 1995-08-04 | Etching solution for copper or copper alloy |
KR1019950024686A KR960007826A (ko) | 1994-08-12 | 1995-08-10 | 동 또는 동합금 엣칭액 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21073294A JP3400558B2 (ja) | 1994-08-12 | 1994-08-12 | 銅および銅合金のエッチング液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0860386A JPH0860386A (ja) | 1996-03-05 |
JP3400558B2 true JP3400558B2 (ja) | 2003-04-28 |
Family
ID=16594198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21073294A Expired - Fee Related JP3400558B2 (ja) | 1994-08-12 | 1994-08-12 | 銅および銅合金のエッチング液 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5700389A (ja) |
EP (1) | EP0696651A1 (ja) |
JP (1) | JP3400558B2 (ja) |
KR (1) | KR960007826A (ja) |
CN (1) | CN1078629C (ja) |
TW (1) | TW287208B (ja) |
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US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
US6162503A (en) * | 1997-06-12 | 2000-12-19 | Macdermid, Incorporated | Process for improving the adhesion of polymeric materials to metal surfaces |
US5869130A (en) * | 1997-06-12 | 1999-02-09 | Mac Dermid, Incorporated | Process for improving the adhesion of polymeric materials to metal surfaces |
US6020029A (en) * | 1997-06-12 | 2000-02-01 | Macdermid, Incorporated | Process for treating metal surfaces |
US6146701A (en) * | 1997-06-12 | 2000-11-14 | Macdermid, Incorporated | Process for improving the adhension of polymeric materials to metal surfaces |
JPH1129883A (ja) * | 1997-07-08 | 1999-02-02 | Mec Kk | 銅および銅合金のマイクロエッチング剤 |
JP3909920B2 (ja) * | 1997-07-24 | 2007-04-25 | メック株式会社 | 銅および銅合金の表面処理法 |
US6141870A (en) | 1997-08-04 | 2000-11-07 | Peter K. Trzyna | Method for making electrical device |
US6284309B1 (en) | 1997-12-19 | 2001-09-04 | Atotech Deutschland Gmbh | Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom |
US6206756B1 (en) | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6276996B1 (en) * | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
JP2001181868A (ja) * | 1999-12-20 | 2001-07-03 | Asahi Denka Kogyo Kk | 銅及び銅合金用のマイクロエッチング剤 |
JP2001181867A (ja) * | 1999-12-20 | 2001-07-03 | Asahi Denka Kogyo Kk | マイクロエッチング剤 |
US6383272B1 (en) | 2000-06-08 | 2002-05-07 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
US6419784B1 (en) | 2000-06-21 | 2002-07-16 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
US6554948B1 (en) | 2000-08-22 | 2003-04-29 | Donald Ferrier | Process for improving the adhesion of polymeric materials to metal surfaces |
KR100419071B1 (ko) * | 2001-06-20 | 2004-02-19 | 엘지.필립스 엘시디 주식회사 | 구리-티타늄 막의 식각용액 및 그 식각방법 |
KR100456373B1 (ko) * | 2001-12-31 | 2004-11-09 | 엘지.필립스 엘시디 주식회사 | 구리 또는 구리/티타늄 식각액 |
CN101058712B (zh) * | 2003-06-13 | 2010-06-02 | 日立化成工业株式会社 | 金属用研磨液以及研磨方法 |
JP4400562B2 (ja) * | 2003-06-13 | 2010-01-20 | 日立化成工業株式会社 | 金属用研磨液及び研磨方法 |
CN101058711B (zh) * | 2003-06-13 | 2011-07-20 | 日立化成工业株式会社 | 金属用研磨液以及研磨方法 |
KR100960687B1 (ko) * | 2003-06-24 | 2010-06-01 | 엘지디스플레이 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
US7232478B2 (en) * | 2003-07-14 | 2007-06-19 | Enthone Inc. | Adhesion promotion in printed circuit boards |
US7541275B2 (en) * | 2004-04-21 | 2009-06-02 | Texas Instruments Incorporated | Method for manufacturing an interconnect |
DE102004045297A1 (de) * | 2004-09-16 | 2006-03-23 | Basf Ag | Verfahren zum Behandeln von metallischen Oberflächen unter Verwendung von Formulierungen auf Basis von wasserarmer Methansulfonsäure |
US7393461B2 (en) * | 2005-08-23 | 2008-07-01 | Kesheng Feng | Microetching solution |
KR101310310B1 (ko) * | 2007-03-15 | 2013-09-23 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각액 조성물 |
JP5559956B2 (ja) * | 2007-03-15 | 2014-07-23 | 東進セミケム株式会社 | 薄膜トランジスタ液晶表示装置のエッチング液組成物 |
JP5088352B2 (ja) * | 2009-08-24 | 2012-12-05 | 日立化成工業株式会社 | 金属用研磨液及び研磨方法 |
CN101736352B (zh) * | 2009-12-31 | 2011-04-13 | 河北省文物保护中心 | 青铜器文物修复液及其修复方法 |
KR20110087582A (ko) * | 2010-01-26 | 2011-08-03 | 삼성전자주식회사 | 식각액 조성물 및 이를 이용한 식각 방법 |
KR101608873B1 (ko) | 2010-03-18 | 2016-04-05 | 삼성디스플레이 주식회사 | 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법 |
JP6251568B2 (ja) | 2010-07-06 | 2017-12-20 | アトテック ドイチェランド ゲーエムベーハー | 金属表面を処理する方法と、この方法によって形成された装置 |
KR101774906B1 (ko) | 2010-07-06 | 2017-09-05 | 나믹스 코포레이션 | 인쇄회로기판에서 사용하기 위한 유기 기판에의 접착을 향상시키는 구리 표면의 처리 방법 |
US8956918B2 (en) * | 2012-12-20 | 2015-02-17 | Infineon Technologies Ag | Method of manufacturing a chip arrangement comprising disposing a metal structure over a carrier |
KR101527117B1 (ko) | 2013-06-27 | 2015-06-09 | 삼성디스플레이 주식회사 | 식각액 조성물, 이를 이용한 금속 배선 제조 방법 및 박막 트랜지스터 기판 제조방법 |
EP2853619A1 (en) * | 2013-09-25 | 2015-04-01 | ATOTECH Deutschland GmbH | Method for treatment of recessed structures in dielectric materials for smear removal |
CN104694909B (zh) * | 2014-07-03 | 2017-01-25 | 广东丹邦科技有限公司 | 一种铜表面粗化剂 |
JP6000420B1 (ja) * | 2015-08-31 | 2016-09-28 | メック株式会社 | エッチング液、補給液及び銅配線の形成方法 |
CN105543846A (zh) * | 2016-02-05 | 2016-05-04 | 广东成德电子科技股份有限公司 | 印制电路板中性蚀刻剂及蚀刻方法 |
WO2019208461A1 (ja) * | 2018-04-24 | 2019-10-31 | 三菱瓦斯化学株式会社 | 銅箔用エッチング液およびそれを用いたプリント配線板の製造方法ならびに電解銅層用エッチング液およびそれを用いた銅ピラーの製造方法 |
CN109536962B (zh) * | 2018-11-20 | 2023-06-16 | 无锡格菲电子薄膜科技有限公司 | 一种cvd石墨烯生长衬底铜箔酸性刻蚀液 |
CN113903832B (zh) * | 2021-12-09 | 2022-02-25 | 绍兴拓邦电子科技有限公司 | 一种晶硅表面电池的碱抛光方法 |
CN114807942B (zh) * | 2022-03-07 | 2024-02-13 | 上海富柏化工有限公司 | 一种过硫酸钠微蚀添加剂及其应用 |
CN115558931B (zh) * | 2022-10-26 | 2023-07-04 | 广东华智芯电子科技有限公司 | 铜表面晶花的细化方法、腐蚀液组合及其应用 |
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GB1320589A (en) * | 1971-02-05 | 1973-06-13 | Formica Int | Surface cleaning compositions for copper and copper alloys |
JPS5221460B1 (ja) * | 1971-04-26 | 1977-06-10 | ||
JPS533975B2 (ja) * | 1973-10-17 | 1978-02-13 | Tokai Electro Chemical Co | |
JPS5224508B2 (ja) * | 1973-11-19 | 1977-07-01 | Tokai Electro Chemical Co | |
JPS5242727A (en) * | 1975-09-30 | 1977-04-02 | Konishiroku Photo Ind Co Ltd | Method for cleaning photograph processing apparatus |
SE425007B (sv) * | 1976-01-05 | 1982-08-23 | Shipley Co | Stabil etslosning omfattande svavelsyra och veteperoxid samt anvendning av densamma |
FR2388898A1 (fr) * | 1977-04-27 | 1978-11-24 | Ugine Kuhlmann | Procede de decapage-brillantage pour le cuivre et ses alliages |
JPS57164984A (en) * | 1981-04-06 | 1982-10-09 | Metsuku Kk | Exfoliating solution for tin or tin alloy |
DE3623504A1 (de) * | 1986-07-09 | 1988-01-21 | Schering Ag | Kupferaetzloesungen |
JP2909743B2 (ja) * | 1989-03-08 | 1999-06-23 | 富山日本電気株式会社 | 銅または銅合金の化学研磨方法 |
US5066366A (en) * | 1990-05-04 | 1991-11-19 | Olin Corporation | Method for making foil |
US5391395A (en) * | 1992-12-30 | 1995-02-21 | Witco Corporation | Method of preparing substrates for memory disk applications |
-
1994
- 1994-08-12 JP JP21073294A patent/JP3400558B2/ja not_active Expired - Fee Related
- 1994-09-22 TW TW083108715A patent/TW287208B/zh active
-
1995
- 1995-06-28 CN CN95105687A patent/CN1078629C/zh not_active Expired - Fee Related
- 1995-08-02 US US08/510,299 patent/US5700389A/en not_active Expired - Fee Related
- 1995-08-04 EP EP95112324A patent/EP0696651A1/en not_active Withdrawn
- 1995-08-10 KR KR1019950024686A patent/KR960007826A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR960007826A (ko) | 1996-03-22 |
CN1117531A (zh) | 1996-02-28 |
US5700389A (en) | 1997-12-23 |
CN1078629C (zh) | 2002-01-30 |
EP0696651A1 (en) | 1996-02-14 |
TW287208B (ja) | 1996-10-01 |
JPH0860386A (ja) | 1996-03-05 |
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