JP3375224B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small semiconductor device for accommodating semiconductor elements and a manufacturing method thereof, and more particularly to a small semiconductor device capable of realizing high performance, high reliability and miniaturization and a manufacturing method thereof. Is.

[0002]

2. Description of the Related Art FIG. 16 shows, for example, 1994 IEEE /
CHMT lnt'l Electronics Ma
nufacturing Technology Sy
"Chip Sc"
ale Package (CSP) "A Lightl
FIG. 8 is a partial cross-sectional perspective view showing a small-sized semiconductor device having a conventional protruding electrode shown as “y Dressed LSI Chip” ”. In the figure, 1 is a semiconductor chip,
Reference numeral 2 is a first conductor provided on the semiconductor chip, 3 is a second conductor provided on the first conductor, and 4 is a molding resin.

Next, this conventional semiconductor device will be described with reference to FIG. The first conductor 2 is formed on the active element surface of the semiconductor chip 1, is formed on a base metal barrier layer formed on a bonding pad that functions as an external lead electrode, and has a substantially flat upper surface. The mold resin 4 is configured to cover the semiconductor chip 1 and a portion of the first conductor 2 excluding the flat upper surface. The second conductor 3 is formed on the first conductor 2 and is formed of a solder ball or the like so as to be an electrode and a bonding portion when surface-mounted on a substrate. The semiconductor device composed of the semiconductor chip 1, the first conductor 2, the second conductor 3, and the molding resin 4 is a resin-sealed semiconductor device aiming at downsizing and improvement of electrical characteristics.

[0004]

Since the conventional small-sized semiconductor device is constructed as described above, when mounted on a substrate, the second conductor 3 serving as an electrode and a connecting portion with the substrate has high reliability. Although required, there is a problem in that the warpage caused by the difference in the coefficient of thermal expansion between the constituent material of this small semiconductor device and the substrate reduces this reliability.

Although the heat generated in the active element of the semiconductor chip 1 escapes to the substrate through the first conductor 2 and the second conductor 3, the heat dissipation to the upper side of the small semiconductor device is small, so that the heat dissipation characteristic is improved. There are problems such as badness.

The present invention has been made in order to solve the above-mentioned problems of the prior art. The semiconductor chip is protected by a mold resin while the warpage is mitigated to improve reliability in mounting on a board. It is an object of the present invention to obtain a small semiconductor device capable of improving heat dissipation, and further to provide a manufacturing method suitable for manufacturing this device.

[0007]

In a semiconductor device according to the present invention, a semiconductor chip having a main surface on which a first conductor is formed and a back surface on which heat dissipation bumps are formed, and the surfaces of the first conductors and heat dissipation bumps are exposed. Thus, it is characterized by including a mold resin for covering the semiconductor chip and a second conductor formed on the exposed surface of the first conductor.

Further, in the method for manufacturing a semiconductor device of the present invention, a plurality of heat dissipation bumps are previously formed on the base material,
It is desirable to include a step of forming these heat radiation bumps on the back surface of the semiconductor chip by transferring these heat radiation bumps to the back surface of the semiconductor chip.

Further, in the method of manufacturing a semiconductor device of the present invention, a first base material having a length for covering a plurality of semiconductor chips and having a plurality of first conductors formed thereon, and a plurality of semiconductor chips are covered. A second base material having a length and formed with a plurality of heat dissipation bumps is prepared in advance, and the first conductor and the second base material formed on the first base material are respectively formed on the main surface and the back surface of the semiconductor chip. The heat radiation bumps formed on the second base material are joined together, the mold resin is filled between the first base material and the second base material and cured, and the semiconductor chip is cut into individual pieces. It is desirable to peel off at least the first base material from the semiconductor chip.

Further, in the method for manufacturing a semiconductor device of the present invention, the first and second base materials are provided with protrusions protruding toward the mold resin side at the boundary positions of the individual pieces of the semiconductor chips. desirable.

Further, in the semiconductor device of the present invention, it is desirable that a radiation pin is provided on the exposed surface of the radiation bump.

In the method for manufacturing a semiconductor device of the present invention, a plurality of heat dissipation pins are formed on the base material, these heat dissipation pins are joined to the heat dissipation bumps, and then only the base material is peeled off to dissipate heat. It is desirable to include a step of transferring the pins to the heat dissipation bumps.

In the method of manufacturing a semiconductor device of the present invention, it is preferable that the method further comprises the step of forming a heat dissipation pin on the heat dissipation bump by bonding a wire bump to the exposed surface of the heat dissipation bump by thermocompression bonding.

Further, in the semiconductor device of the present invention, it is desirable that a base material is fixed on the exposed surface of the heat dissipation bump.

Further, in the semiconductor device of the present invention, it is desirable that a heat sink is attached on the base material.

Further, in the resin-sealed semiconductor device having the heat spreader of the present invention, a plurality of holes are formed from the back surface side of the heat spreader to the outside of the mold resin, and the heat dissipation bumps are formed in the plurality of holes. It is characterized by being.

Further, in this method of manufacturing a semiconductor device, a step of forming a plurality of heat radiation bumps on a base material in advance and bonding and transferring these heat radiation bumps to the back surface of the heat spreader through the plurality of holes is performed. It is desirable to include.

[0018]

In the semiconductor device according to the present invention, not only the first conductor is formed on the main surface of the semiconductor chip, but also the heat radiation bumps are formed on the back surface of the semiconductor chip. Due to the balance with the first conductor on the main surface of the semiconductor chip, the warpage of the semiconductor device that occurs when the semiconductor device is mounted on the substrate is warmed, the force applied to the second conductor is reduced, and board mountability is improved. The reliability of implementation will be improved. Further, the heat from the semiconductor chip is released to the outside of the mold resin via the heat dissipation bumps, so that the heat dissipation of the semiconductor device is improved.

Further, in the method of manufacturing a semiconductor device of the present invention, a plurality of heat dissipation bumps are previously formed on the base material,
Since these heat radiation bumps are transferred to the back surface of the semiconductor chip to form the heat radiation bumps on the back surface of the semiconductor chip, the heat radiation bumps can be formed easily and with high accuracy.

In the method of manufacturing a semiconductor device of the present invention, a first base material having a length that covers a plurality of semiconductor chips and having a plurality of first conductors formed thereon, and a length that covers a plurality of semiconductor chips. And a second base material on which a plurality of heat dissipation bumps are formed are prepared, a semiconductor chip is sandwiched between the first and second base materials, and the space is sandwiched between the semiconductor chips. By filling the mold resin, the filling operation of the mold resin can be made efficient.

In the method for manufacturing a semiconductor device of the present invention, the molding resin is cured by forming protrusions on the first and second bases at the boundary positions of the individual pieces of the semiconductor chip, the projections protruding toward the molding resin. It will be easier to cut into individual pieces later, and chocolate breaks for each piece will be possible.

Further, in the semiconductor device of the present invention, if a heat dissipation pin is provided on the exposed surface of the heat dissipation bump,
The heat dissipation of the semiconductor device is further improved.

Further, in the method for manufacturing a semiconductor device of the present invention, a plurality of heat dissipation pins are formed on a base material, these heat dissipation pins are bonded to the heat dissipation bumps, and then only the base material is peeled off to dissipate the heat dissipation pins. Is transferred to the heat radiating bumps, the heat radiating pins can be easily and accurately joined to the heat radiating bumps.

In the method for manufacturing a semiconductor device of the present invention, if the wire bumps are bonded to the exposed surfaces of the heat dissipation bumps by thermocompression bonding, the heat dissipation pins can be formed very easily on the heat dissipation bumps. .

Further, in the semiconductor device of the present invention, by fixing the base material on the exposed surface of the heat dissipation bump, the heat dissipation efficiency can be further improved.

In the semiconductor device of the present invention, if a heat sink is attached on the base material, the heat radiation efficiency can be further improved.

Further, in the resin-sealed semiconductor device having the heat spreader of the present invention, a plurality of holes are formed from the back surface side of the heat spreader to the outside of the mold resin, and the heat dissipation bumps are formed in the plurality of holes. By doing so, the heat dissipation can be significantly improved compared to the conventional case.

Further, in this method of manufacturing a semiconductor device, a plurality of heat radiation bumps may be formed in advance on the base material, and these heat radiation bumps may be bonded and transferred to the back surface of the heat spreader through the plurality of holes. In this case, the heat dissipation bumps can be easily and accurately formed on the heat spreader.

[0029]

【Example】

Example 1. Embodiment 1 of the present invention will be described below with reference to the drawings. 1 is a cross-sectional view showing the present embodiment, FIG. 2 is a cross-sectional view showing an example in which this small semiconductor device is mounted on a substrate, and FIG.
6C is a sectional view showing the method for manufacturing the semiconductor device according to the present embodiment. FIG. 1 to 3, 1 is a semiconductor chip, 1 a is a main surface of a semiconductor chip on which active elements are formed, 1 b is a semiconductor chip back surface, 2 is a first conductor, 3 is a second conductor, 4 is a molding resin, 5 Is a bonding material, 6 is a heat dissipation bump, 7 is a substrate, and 8 is a base material.

The structure of this embodiment will be described with reference to FIGS. As shown in FIGS. 1 and 2, on the main surface 1a of the semiconductor chip 1 on which the active elements are formed, a plurality of first conductors 2 made of Cu or the like are provided, for example, Pb—Sn based solder, In
It is formed of a bonding material 5 such as -Pb-based solder. In this case, the first conductors 2 are arranged in two rows on the main surface 1a of the semiconductor chip 1 as illustrated.

A plurality of heat dissipation bumps 6 are formed on the back surface 1b of the semiconductor chip 1. The heat dissipation bumps 6 are formed of copper or a material having excellent heat dissipation characteristics, particularly a material having the same thermal conductivity as or higher than that of the first conductor 2. In this embodiment, the heat dissipation bump 6
Are arranged in the same number at the target position with the semiconductor chip 1 sandwiched between the formation positions of the first conductors 2. However, even if the formation positions and the number thereof are changed in consideration of improvement in mountability on the substrate, etc. Good. The first conductor 2 and the heat dissipation bump 6 are covered with the molding resin 4 so that their partial surfaces are exposed. On the exposed surface of the first conductor 2,
The second conductor 3 is formed.

Next, a method of manufacturing the semiconductor device according to this embodiment will be described with reference to FIGS. First, as shown in FIG. 3A, at least two long base materials 8 capable of covering a plurality of semiconductor chips 1 are prepared. Then, the first conductor 2 is formed in advance on one of the two base materials 8 by etching or the like, and
The heat dissipation bumps 6 are formed on the other base material 8. Also,
A bonding material 5 is formed on each of the first conductor 2 and the heat dissipation bump 6.

Then, these two base materials 8 are formed on the first conductor 2 and the heat dissipation bumps 6 respectively formed on them.
The semiconductor chip 1 is disposed so as to sandwich the semiconductor chip 1 so that the semiconductor chip 1 contacts the main surface and the back surface of the semiconductor chip 1, respectively.
Then, for example, by heating to about 370 degrees, the bonding material 5
The first conductor 2 and the heat dissipation bump 6 are bonded to the main surface and the back surface of the semiconductor chip 1, respectively (for example, with a melting point of 320 degrees).

Next, as shown in FIG. 3B, a mold resin 4 such as an epoxy resin is poured between the two base materials 8 under heating at about 180 ° C., and then cured. After curing, each piece is cut out as shown by the broken line in the figure.

Next, as shown in FIG. 3C, the base material 8 is peeled off from the mold resin 4. At this time, only the base material 8 is peeled off while the first conductor 2 and the heat dissipation bumps 6 formed on the base material 8 are still attached to the semiconductor chip 1, whereby the first conductor 2 is removed.
Then, the heat radiation bumps 6 are transferred to the semiconductor chip 1. As described above, the structure in which the first conductor 2 and the heat dissipation bump 6 are formed on the semiconductor chip 1 and the first conductor 2 and the heat dissipation bump 6 are partially covered with the mold resin 4 so as to be exposed is obtained. The material of the base material 8 is SU.
S304, polyimide and the like are preferable. In the above method, the base material 8 is peeled off after being cut into individual pieces, but the base material 8 may be cut off and then cut into individual pieces.

Next, the second conductor 3 is formed on the exposed partial surface of the first conductor 2. As described above, the small semiconductor device as shown in FIG. 1 according to this embodiment is obtained. The material of the second conductor 3 is Pb-Sn based solder, In-
Pb etc. can be mentioned.

The small semiconductor device according to this embodiment can be surface-mounted on the substrate 7 via the second conductor 3, as shown in FIG. Note that a part of the surface of the heat dissipation bump 6 remains exposed.

Example 2. It should be noted that, in the first embodiment, as shown in FIG.
Although cut out into individual pieces at the stage shown in (b), in Example 2 shown in FIG. 4, in order to facilitate the separation of the individual pieces when cutting out into these individual pieces, the boundaries between the individual pieces of both base materials 8 are separated. The projections 9 are integrally formed on the portions corresponding to the positions on both the base materials 8. By using the base material 8 with the projections 9, not only is it easy to cut out individual pieces,
It is also possible to make chocolate breaks for each individual piece.

Example 3. In addition, as shown in FIG.
In the example of (c), the mold resin 4 is poured between the long base materials 8. However, in Example 3 shown in FIG. 5, one of the bases on the heat dissipation bump 6 side or the first conductor 2 side is used. The material 8a is made into individual pieces, transfer molding is performed using the mold 10, and then the base materials 8 and 8a are peeled off to manufacture a small semiconductor device.

Example 4. Further, in the fourth embodiment shown in FIG. 6, the heat dissipation pin 11 is mounted on the exposed partial surface of the heat dissipation bump 6 of FIG. As shown in FIG. 7, the heat radiation pins 11 are mounted on the heat radiation bumps 6 via the bonding material 12 using an insulating high thermal conductive tape or the like, which is formed on the base material 8. After that, the base material 8 is peeled off. In this way, by raising the heat dissipation pin 11 on the heat dissipation bump 6, the heat dissipation of the semiconductor device is improved.

Example 5. In Example 5 shown in FIG. 8, the wire bumps 16 are bonded to the exposed surface of the heat dissipation bumps 6 by thermocompression bonding, the capillaries 15 are pulled up to an appropriate length, and the wires 17 are cut off, whereby the heat dissipation bumps 6 are formed. A heat dissipation pin is formed on the exposed surface.

Example 6. Further, in Example 6 shown in FIG. 9, the base material 8 on the heat dissipation bump 6 after being cut into individual pieces in the stage of FIG. 3B is attached without being peeled off from the mold resin 4 and the heat dissipation bump 6. The base material 8 is used as a heat dissipation plate. In the sixth embodiment, the base material 8a on the heat dissipation bump 6 of FIG. 5 may be left attached without being peeled off and the base material 8a may be used as a heat dissipation plate. In this embodiment, the heat dissipation of the semiconductor device is improved by the base material 8 serving as the heat dissipation plate.

Example 7. In Example 7 shown in FIG. 10, a heat sink 13 is further attached to the upper surface of the base material 8 used as the heat dissipation plate in FIG. 9 to further improve the heat dissipation effect.

Example 8. Further, in Example 8 shown in FIG. 11, the drum-shaped solder columns 14 formed on the exposed surface of the heat dissipation bumps 6 and the base material 8 attached thereon are used as heat dissipation fins. The method of forming the drum-shaped solder column 14 is as follows. That is, as shown in FIG. 12A, the base material 8 on which the solder balls 14 are formed is
It is placed on the upper surface of the small semiconductor device so that the solder balls 14 are on the heat dissipation bumps 6 and heated to melt the solder. When the solder is melted, the base material 8 is pulled up as shown in FIG. 12B, and is cooled when the solder balls 14 are deformed into a drum shape. As a result, the drum-shaped solder column 14 of FIG. 11 is formed.

Example 9. Embodiment 9 FIG. 13 is a resin-sealed semiconductor device having a cavity-down type heat dissipation bump, showing Embodiment 9 of the present invention. In this Example 9,

Next, the manufacturing method of the ninth embodiment will be described.
In a resin-sealed semiconductor device using a heat spreader having high heat dissipation, first, transfer molding is performed so that a plurality of holes 21 are formed on the back surface side of the heat spreader 20 as shown in FIG. Further, as shown in FIG. 15, a base material 8 on which a plurality of heat dissipation bumps 6 are previously formed is prepared in advance.
The bonding material 12 is formed on the tips of the heat dissipation bumps 6. Then, the base material 8 is brought close to the plurality of holes 21 so that the heat dissipation bumps 6 are inserted, and the heat dissipation bumps 6 are inserted.
Is transferred to the heat spreader 20 (the base material 8 is peeled off). As a result, a resin-sealed semiconductor device using the cavity-down type heat dissipation bump having the structure shown in FIG. 13 is formed. In the ninth embodiment, the heat spreader 20 is provided with the heat dissipation bumps 6 in the holes 21 which are buried in the mold resin 4 and communicate with the outside.
It is possible to improve the heat dissipation of the semiconductor device while keeping the position of the heat spreader 20 stable.

[0047]

As described above, according to the semiconductor device of the present invention, the heat dissipation bumps are formed not only on the main surface of the semiconductor chip but also on the back surface of the semiconductor chip. , The balance between the heat radiation bumps on the back surface of the semiconductor chip and the first conductor on the main surface of the semiconductor chip protects the semiconductor chip with the molding resin, and the warpage of the semiconductor device that occurs when mounting the semiconductor device on the substrate is mild. As a result, the force applied to the second conductor is reduced, the board mountability is improved, and the board mount reliability is improved. Further, the heat generated in the active element of the semiconductor chip can be released upward through the heat radiation bumps as an escape path, so that the heat radiation characteristics of the semiconductor device can be improved.

Further, in the method for manufacturing a semiconductor device of the present invention, a plurality of heat dissipation bumps are previously formed on the base material,
Since these heat radiation bumps are transferred to the back surface of the semiconductor chip to form the heat radiation bumps on the back surface of the semiconductor chip, the heat radiation bumps can be formed easily and with high accuracy.

In the method of manufacturing a semiconductor device of the present invention, a first base material having a length that covers a plurality of semiconductor chips and having a plurality of first conductors formed thereon, and a length that covers a plurality of semiconductor chips. And a second base material on which a plurality of heat dissipation bumps are formed are prepared, a semiconductor chip is sandwiched between the first and second base materials, and the space is sandwiched between the semiconductor chips. By filling the mold resin, the filling operation of the mold resin can be made efficient.

In the method for manufacturing a semiconductor device of the present invention, the molding resin is cured by forming protrusions on the first and second base materials at the boundary positions of the individual pieces of the semiconductor chip so as to project toward the molding resin side. It will be easier to cut into individual pieces later, and chocolate breaks for each piece will be possible.

Further, in the semiconductor device of the present invention, if a heat dissipation pin is provided on the exposed surface of the heat dissipation bump,
The heat dissipation of the semiconductor device is further improved.

Further, in the method for manufacturing a semiconductor device of the present invention, a plurality of heat dissipation pins are formed on the base material, these heat dissipation pins are bonded to the heat dissipation bumps, and then only the base material is peeled off. Is transferred to the heat radiating bumps, the heat radiating pins can be easily and accurately joined to the heat radiating bumps.

In the method for manufacturing a semiconductor device of the present invention, if the wire bumps are bonded to the exposed surface of the heat dissipation bumps by thermocompression bonding, the heat dissipation pins can be formed extremely easily on the heat dissipation bumps. .

Further, in the semiconductor device of the present invention, by fixing the base material on the exposed surface of the heat dissipation bump, the heat dissipation efficiency is further improved.

Further, in the semiconductor device of the present invention, if a heat sink is attached on the base material, the heat radiation efficiency can be further improved.

Further, in the resin-sealed semiconductor device having the heat spreader of the present invention, a plurality of holes are formed so as to extend from the back surface side of the heat spreader to the outside of the mold resin, and the heat dissipation bumps are formed in the plurality of holes. By doing so, the heat dissipation can be significantly improved compared to the conventional case.

Further, in this method of manufacturing a semiconductor device, a plurality of heat radiation bumps may be formed in advance on the base material, and these heat radiation bumps may be bonded and transferred to the back surface of the heat spreader through the plurality of holes. In this case, the heat dissipation bumps can be easily and accurately formed on the heat spreader.

[Brief description of drawings]

FIG. 1 is a sectional perspective view of a small semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view of the small semiconductor device according to the first embodiment when mounted on a substrate.

FIG. 3 is a cross-sectional view showing the method of manufacturing the small semiconductor device according to the first embodiment.

FIG. 4 is a cross-sectional view showing the method of manufacturing the small semiconductor device according to the second embodiment of the present invention.

FIG. 5 is a cross-sectional view showing the method of manufacturing the small semiconductor device showing the third embodiment of the present invention.

FIG. 6 is a sectional view of a small semiconductor device showing a fourth embodiment of the present invention.

FIG. 7 is a cross-sectional view showing the method of manufacturing the small semiconductor device of the fourth embodiment.

FIG. 8 is a cross-sectional view showing the method of manufacturing the small semiconductor device showing the fifth embodiment of the present invention.

FIG. 9 is a sectional view of a small semiconductor device showing a sixth embodiment of the present invention.

FIG. 10 is a sectional view of a small-sized semiconductor device showing Embodiment 7 of the present invention.

FIG. 11 is a sectional view of a small-sized semiconductor device showing an eighth embodiment of the present invention.

FIG. 12 is a cross-sectional view showing the method of manufacturing the small semiconductor device according to the eighth embodiment.

FIG. 13 is a sectional view of a small-sized semiconductor device showing Embodiment 9 of the present invention.

FIG. 14 is a cross-sectional view showing the method of manufacturing the small semiconductor device according to the ninth embodiment.

FIG. 15 is a cross-sectional view showing the method of manufacturing the small semiconductor device according to the ninth embodiment.

FIG. 16 is a partial cross-sectional perspective view showing a conventional small semiconductor device.

[Explanation of symbols]

1 semiconductor chip 1a Main surface of semiconductor chip 1b Back side of semiconductor chip 2 First conductor 3 Second conductor 4 Mold resin 5 Bonding material 6 Heat dissipation bump 7 substrate 8,8a base material 9 protrusions 10 mold 11 pin 12 (Pin) bonding material 13 heat sink 14 Solder balls (hand-shaped solder pillars) 15 capillaries 16 wire bumps 17 wires 18 leads 19 die pad 20 heat spreader 21 holes

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Mitsuyasu Matsuo Miyoshi, Nishigoshi-cho, Kikuchi-gun, Kumamoto 997 Mitsubishi Electric Corporation Kumamoto Factory (72) Inventor Kiichi Narutaki, Miyoshi, Nishigoshi-cho, Kikuchi-gun, Kumamoto 997 Mitsubishi Electric Corporation Kumamoto Manufacturing (56) Reference JP-A-6-132441 (JP, A) JP-A-7-235620 (JP, A) JP-A-7-183425 (JP, A) JP-A-6-302604 (JP, A) A) Japanese Unexamined Patent Publication No. 2-137249 (JP, A) Japanese Unexamined Patent Publication No. 4-206956 (JP, A) Actual Development Sho 48-67658 (JP, U) (58) Fields investigated (Int.Cl. ⁷ , DB name) ) H01L 23/12 H01L 23/29 H01L 23/34

Claims (10)

(57) [Claims] 1. A semiconductor chip having a main surface on which a first conductor is formed and a back surface on which heat dissipation bumps are formed, and a mold resin which covers the semiconductor chips so that the surfaces of the first conductors and heat dissipation bumps are exposed. A second conductor formed on the exposed surface of the first conductor; 2. The method of manufacturing a semiconductor device according to claim 1, wherein a plurality of heat dissipation bumps are formed on a base material in advance, and these heat dissipation bumps are transferred to the back surface of the semiconductor chip. A method of manufacturing a semiconductor device, comprising a step of forming a heat dissipation bump on a back surface. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the first base material has a length that covers a plurality of semiconductor chips and has a plurality of first conductors formed thereon. A second base material having a length to cover the semiconductor chip and having a plurality of heat dissipation bumps formed thereon is prepared, and the main surface and the back surface of the semiconductor chip are respectively formed on the first base material. The first conductor and the heat dissipation bump formed on the second base material are joined, and a mold resin is filled between the first base material and the second base material and cured, and each individual piece of the semiconductor chip A method of manufacturing a semiconductor device, characterized in that the semiconductor substrate is cut into pieces and at least the first base material is peeled off from the semiconductor chip. 4. The method for manufacturing a semiconductor device according to claim 3, wherein the first and second base materials are provided with protrusions protruding toward the mold resin at the boundary positions of the individual pieces of the semiconductor chips. Manufacturing method of semiconductor device. 5. The semiconductor device according to claim 1, wherein a heat dissipation pin is provided on an exposed surface of the heat dissipation bump. 6. The method of manufacturing a semiconductor device according to claim 5, wherein a plurality of heat dissipation pins are formed on the base material, the heat dissipation pins are bonded to the heat dissipation bumps, and then only the base material is peeled off. The method for manufacturing a semiconductor device according to claim 1, including the step of transferring the heat dissipation pin to the heat dissipation bump. 7. The method of manufacturing a semiconductor device according to claim 5, comprising the step of forming a heat dissipation pin on the heat dissipation bump by bonding a wire bump to the exposed surface of the heat dissipation bump by thermocompression bonding. A method for manufacturing a characteristic semiconductor device. 8. The semiconductor device according to claim 1, wherein a base material is fixed on the exposed surface of the heat dissipation bump. 9. The semiconductor device according to claim 8, wherein a heat sink is attached on the base material. 10. A heat spreader is provided, and the heat is provided.
A compound that escapes from the back side of the spreader to the outside of the mold resin.
A number of holes are formed, and heat dissipation bumps are placed in the holes.
A method of manufacturing a but formed resin-sealed semiconductor device, in advance in the base material previously formed a plurality of heat radiating bump bonded to these heat dissipation bumps on the back surface of the heat spreader through the plurality of holes A method of manufacturing a semiconductor device, comprising the step of transferring.