JP3356968B2 - Transparent conductive film, method of manufacturing the same, and display device - Google Patents
Transparent conductive film, method of manufacturing the same, and display deviceInfo
- Publication number
- JP3356968B2 JP3356968B2 JP18287497A JP18287497A JP3356968B2 JP 3356968 B2 JP3356968 B2 JP 3356968B2 JP 18287497 A JP18287497 A JP 18287497A JP 18287497 A JP18287497 A JP 18287497A JP 3356968 B2 JP3356968 B2 JP 3356968B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- ruthenium
- film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims description 108
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 42
- 229910052707 ruthenium Inorganic materials 0.000 claims description 42
- 239000010409 thin film Substances 0.000 claims description 41
- 239000003973 paint Substances 0.000 claims description 23
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 22
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 22
- 239000010419 fine particle Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000004040 coloring Methods 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 37
- 230000000694 effects Effects 0.000 description 28
- 150000003839 salts Chemical class 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000975 dye Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 235000019441 ethanol Nutrition 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- KZFMOINJHMONLW-FOCLMDBBSA-N (2e)-4,7-dichloro-2-(4,7-dichloro-3-oxo-1-benzothiophen-2-ylidene)-1-benzothiophen-3-one Chemical compound S\1C(C(=CC=C2Cl)Cl)=C2C(=O)C/1=C1/C(=O)C(C(Cl)=CC=C2Cl)=C2S1 KZFMOINJHMONLW-FOCLMDBBSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- FWLHAQYOFMQTHQ-UHFFFAOYSA-N 2-N-[8-[[8-(4-aminoanilino)-10-phenylphenazin-10-ium-2-yl]amino]-10-phenylphenazin-10-ium-2-yl]-8-N,10-diphenylphenazin-10-ium-2,8-diamine hydroxy-oxido-dioxochromium Chemical compound O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.O[Cr]([O-])(=O)=O.Nc1ccc(Nc2ccc3nc4ccc(Nc5ccc6nc7ccc(Nc8ccc9nc%10ccc(Nc%11ccccc%11)cc%10[n+](-c%10ccccc%10)c9c8)cc7[n+](-c7ccccc7)c6c5)cc4[n+](-c4ccccc4)c3c2)cc1 FWLHAQYOFMQTHQ-UHFFFAOYSA-N 0.000 description 1
- CGLVZFOCZLHKOH-UHFFFAOYSA-N 8,18-dichloro-5,15-diethyl-5,15-dihydrodiindolo(3,2-b:3',2'-m)triphenodioxazine Chemical compound CCN1C2=CC=CC=C2C2=C1C=C1OC3=C(Cl)C4=NC(C=C5C6=CC=CC=C6N(C5=C5)CC)=C5OC4=C(Cl)C3=NC1=C2 CGLVZFOCZLHKOH-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 108091005944 Cerulean Proteins 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 241000123069 Ocyurus chrysurus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910021603 Ruthenium iodide Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- AUNAPVYQLLNFOI-UHFFFAOYSA-L [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O Chemical compound [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O AUNAPVYQLLNFOI-UHFFFAOYSA-L 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- AOADSHDCARXSGL-ZMIIQOOPSA-M alkali blue 4B Chemical compound CC1=CC(/C(\C(C=C2)=CC=C2NC2=CC=CC=C2S([O-])(=O)=O)=C(\C=C2)/C=C/C\2=N\C2=CC=CC=C2)=CC=C1N.[Na+] AOADSHDCARXSGL-ZMIIQOOPSA-M 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- UHHXUPJJDHEMGX-UHFFFAOYSA-K azanium;manganese(3+);phosphonato phosphate Chemical compound [NH4+].[Mn+3].[O-]P([O-])(=O)OP([O-])([O-])=O UHHXUPJJDHEMGX-UHFFFAOYSA-K 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 125000005626 carbonium group Chemical group 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 229910000152 cobalt phosphate Inorganic materials 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011790 ferrous sulphate Substances 0.000 description 1
- 235000003891 ferrous sulphate Nutrition 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 235000019239 indanthrene blue RS Nutrition 0.000 description 1
- UHOKSCJSTAHBSO-UHFFFAOYSA-N indanthrone blue Chemical compound C1=CC=C2C(=O)C3=CC=C4NC5=C6C(=O)C7=CC=CC=C7C(=O)C6=CC=C5NC4=C3C(=O)C2=C1 UHOKSCJSTAHBSO-UHFFFAOYSA-N 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- GWVMLCQWXVFZCN-UHFFFAOYSA-N isoindoline Chemical compound C1=CC=C2CNCC2=C1 GWVMLCQWXVFZCN-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- NYGZLYXAPMMJTE-UHFFFAOYSA-M metanil yellow Chemical group [Na+].[O-]S(=O)(=O)C1=CC=CC(N=NC=2C=CC(NC=3C=CC=CC=3)=CC=2)=C1 NYGZLYXAPMMJTE-UHFFFAOYSA-M 0.000 description 1
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001005 nitro dye Substances 0.000 description 1
- 239000001006 nitroso dye Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PJQYNUFEEZFYIS-UHFFFAOYSA-N perylene maroon Chemical compound C=12C3=CC=C(C(N(C)C4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)N(C)C(=O)C4=CC=C3C1=C42 PJQYNUFEEZFYIS-UHFFFAOYSA-N 0.000 description 1
- ZZSIDSMUTXFKNS-UHFFFAOYSA-N perylene red Chemical compound CC(C)C1=CC=CC(C(C)C)=C1N(C(=O)C=1C2=C3C4=C(OC=5C=CC=CC=5)C=1)C(=O)C2=CC(OC=1C=CC=CC=1)=C3C(C(OC=1C=CC=CC=1)=CC1=C2C(C(N(C=3C(=CC=CC=3C(C)C)C(C)C)C1=O)=O)=C1)=C2C4=C1OC1=CC=CC=C1 ZZSIDSMUTXFKNS-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000001007 phthalocyanine dye Substances 0.000 description 1
- -1 platinum group metals Chemical class 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001008 quinone-imine dye Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LJZVDOUZSMHXJH-UHFFFAOYSA-K ruthenium(3+);triiodide Chemical compound [Ru+3].[I-].[I-].[I-] LJZVDOUZSMHXJH-UHFFFAOYSA-K 0.000 description 1
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 229960000999 sodium citrate dihydrate Drugs 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 235000014692 zinc oxide Nutrition 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Paints Or Removers (AREA)
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】本発明は、特に陰極線管やプ
ラズマディスプレイなどの表示面に用いて透明で優れた
帯電防止効果と電磁波遮蔽効果とを有し、膜強度が大で
耐塩水性、耐酸化性、耐紫外線性などの耐久性も良好
で、しかも透過画像の色相が自然で視認性が良好な透明
導電膜とその製造方法、およびこの透明導電膜を表示面
に形成した表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is particularly useful for a display surface of a cathode ray tube or a plasma display, etc., and has a transparent and excellent antistatic effect and electromagnetic wave shielding effect, a large film strength, salt water resistance and oxidation resistance. TECHNICAL FIELD The present invention relates to a transparent conductive film having good transparency and durability such as ultraviolet resistance, a natural hue of a transmitted image, and good visibility, a method for manufacturing the same , and a display device having the transparent conductive film formed on a display surface.
【0002】[0002]
【従来の技術】現在、TVブラウン管やコンピュータの
ディスプレイなどとして用いられている陰極線管は、赤
色、緑色、青色に発光する蛍光面に電子ビームを射突さ
せることによって文字や画像を表示面に映し出すもので
あるから、この表示面に発生する静電気により埃が付着
して視認性が低下する他、電磁波を輻射して環境に影響
を及ぼす惧れがある。また最近、壁掛けテレビなどとし
ての応用が進められているプラズマディスプレイにおい
ても、静電気の発生や電磁波輻射の可能性が指摘されて
いる。2. Description of the Related Art At present, a cathode ray tube used as a TV cathode ray tube or a computer display projects characters and images on a display surface by projecting an electron beam on a phosphor screen emitting red, green and blue light. Therefore, there is a fear that dust adheres to the display surface due to static electricity generated on the display surface to lower visibility, and that the environment is affected by radiating electromagnetic waves. Recently, it has been pointed out that a plasma display, which is being applied to a wall-mounted television or the like, may generate static electricity or emit electromagnetic waves.
【0003】これらの静電気の発生や電磁波輻射の問題
を解決するため、従来は、スパッタ法や蒸着法によって
表示装置の表示面上に透明な金属薄膜を形成するか、ま
たは銀、金などの微粒子を液中に分散させた塗布液を表
示面に塗布し、透明導電膜を形成することにより帯電防
止および/または電磁波遮蔽が図られている。また、表
示面上にこれらの薄膜を形成すると、界面反射が起こっ
て視認性が低下するので、これを防止するために、透明
導電膜の上層および/または下層に、これとは屈折率が
異なる透明薄膜を積層することも行われている。[0003] In order to solve the problems of generation of static electricity and radiation of electromagnetic waves, conventionally, a transparent metal thin film is formed on a display surface of a display device by a sputtering method or a vapor deposition method, or fine particles such as silver and gold are used. Is applied to a display surface by dispersing the compound in a liquid, and a transparent conductive film is formed to achieve antistatic and / or electromagnetic wave shielding. In addition, when these thin films are formed on the display surface, interface reflection occurs and visibility is reduced. To prevent this, the upper and / or lower layers of the transparent conductive film have different refractive indices. Lamination of a transparent thin film is also performed.
【0004】例えば特開平8−77832号公報には、
電磁波遮蔽効果と反射防止効果に優れた透明導電膜とし
て、平均粒径2〜200nmの少なくとも銀を含む金属
微粒子による透明金属薄膜と、これと屈折率が異なる透
明被膜とからなるものが提案されている。For example, Japanese Patent Application Laid-Open No. 8-77832 discloses that
As a transparent conductive film excellent in an electromagnetic wave shielding effect and an antireflection effect, a transparent metal thin film made of a metal fine particle containing at least silver having an average particle diameter of 2 to 200 nm and a transparent film having a different refractive index from the transparent metal thin film have been proposed. I have.
【0005】[0005]
【発明が解決しようとする課題】これらの方法によれ
ば、帯電防止と電磁波遮蔽効果は期待できるものの、金
属として銀を用いる場合はその光透過スペクトルに依存
して透過光の特定波長に吸収が生じ、導電膜が着色して
透過画像の色相が不自然に見えるという問題、膜が軟質
で擦りキズなどが発生し易いという問題、また銀は塩水
に曝されると変質し、導電膜の表面抵抗値が上昇し電磁
波遮蔽効果が低下するので、特に海岸など塩霧に曝され
る場所では耐久性が乏しいなどの問題があって実用化が
困難であった。本発明は、上記の課題を解決するために
なされたものであって、従ってその目的は、透明で優れ
た帯電防止効果と電磁波遮蔽効果とを有し、膜強度が大
で耐塩水性に代表される耐久性も良好であり、しかも透
過画像の色相が自然で視認性が良好な透明導電膜とその
製造方法、およびこの透明導電膜が表示面に形成された
表示装置を提供することにある。According to these methods, although antistatic and electromagnetic wave shielding effects can be expected, when silver is used as a metal, absorption at a specific wavelength of transmitted light depends on its light transmission spectrum. The problem is that the conductive film is colored and the hue of the transmitted image looks unnatural, the film is soft and scratches easily occur, and silver is deteriorated when exposed to salt water, and the surface of the conductive film is deteriorated. Since the resistance value is increased and the electromagnetic wave shielding effect is reduced, there has been a problem that durability is poor especially in a place exposed to salt fog, such as a beach, so that it has been difficult to put it to practical use. The present invention has been made in order to solve the above-described problems, and accordingly, has as its object a transparent and excellent antistatic effect and an electromagnetic wave shielding effect, and has a large film strength and is represented by salt water resistance. that durability is good, yet hue natural visibility of transmitted images and excellent transparent conductive film thereof
An object of the present invention is to provide a manufacturing method and a display device in which the transparent conductive film is formed on a display surface.
【0006】[0006]
【課題を解決するための手段】上記の課題を解決するた
めに、本発明は、次の様な透明導電膜とその製造方法及
び表示装置を提供する。 すなわち、本発明の透明導電膜
は、平均粒径が50nm以下のルテニウム微粒子を含む
塗料を塗布、乾燥した後、300℃〜1000℃の温度
で焼付けて形成され、前記ルテニウムの一部が酸化ルテ
ニウムに転化してなる透明導電層を有することを特徴と
する。 前記透明導電層は、ルテニウムと酸化ルテニウム
とを合わせて10重量%以上含有してなることが好まし
い。前記透明導電層の上層および/または下層には、前
記透明導電層の屈折率とは異なる屈折率を有する透明薄
膜が1層以上設けられていることが好ましい。前記透明
導電膜の最外層には、凹凸を有する透明薄膜が設けられ
ていることが好ましい。前記透明導電膜の少なくとも1
層には、着色材が含有されていることが好ましい。本発
明の透明導電膜の製造方法は、平均粒径が50nm以下
のルテニウム微粒子を含む塗料を塗布・乾燥し、次い
で、この塗料を300℃〜1000℃の温度で焼付け、
前記ルテニウムの一部を酸化ルテニウムに転化させるこ
とを特徴とする。 本発明の表示装置は、本発明の透明導
電膜が表示面上に形成されたものであることが好まし
い。 In order to solve the above-mentioned problems , the present invention provides the following transparent conductive film, a method for manufacturing the same, and a method for manufacturing the same.
And a display device. That is, the transparent conductive film of the present invention
After applying and drying a paint containing ruthenium microparticles having an average particle size of 50 nm or less, a temperature of 300 ° C. to 1000 ° C.
In the baked form, a portion of the ruthenium oxide Rute
Characterized by having a transparent conductive layer converted to
I do. The transparent conductive layer is made of ruthenium and ruthenium oxide.
It is preferred which comprises 10 wt% or more combined and. It is preferable that one or more transparent thin films having a refractive index different from the refractive index of the transparent conductive layer are provided in the upper layer and / or the lower layer of the transparent conductive layer. It is preferable that a transparent thin film having irregularities is provided on the outermost layer of the transparent conductive film. At least one of the transparent conductive films
It is preferable that the layer contains a coloring material. Departure
The method for producing a bright transparent conductive film has an average particle size of 50 nm or less.
Apply and dry the paint containing the ruthenium particles of
Then, the paint is baked at a temperature of 300C to 1000C,
Converting part of the ruthenium to ruthenium oxide;
And features. The display device of the present invention is the transparent conductive material of the present invention.
Preferably, the electrode film is formed on the display surface.
No.
【0007】[0007]
【発明の実施の形態】以下、本発明の実施の形態を具体
的に説明する。本発明者らは、表示装置の表示面に用い
ることができ、透明で、優れた帯電防止効果と電磁波遮
蔽効果とを有し耐久性にも優れた透明導電膜を求めて鋭
意研究の結果、平均粒径が50nm以下のルテニウム微
粒子を含む塗料を基材に塗布し、乾燥した後、300℃
〜1000℃の範囲内の焼成温度で焼付けることによっ
て上記の目的が達成できることを見いだし本発明に到達
した。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below. The present inventors have conducted intensive research on a transparent conductive film that can be used on the display surface of a display device, is transparent, has an excellent antistatic effect and an electromagnetic wave shielding effect, and has excellent durability. Ruthenium fine particles with an average particle size of 50 nm or less
After applying the paint containing the particles to the substrate and drying,
It has been found that the above object can be achieved by baking at a baking temperature in the range of ~ 1000 ° C, and the present invention has been achieved.
【0008】平均粒径が50nm以下のルテニウム微粒
子を含む塗料を基材上に塗布し、乾燥後に300℃〜1
000℃の温度で焼き付けて成膜すると、ルテニウム微
粒子の粒径が小さいことから微粒子の総表面積が十分に
大きくなり、前記の焼付け温度でルテニウムの一部が酸
化ルテニウムに転化する。酸化ルテニウムは、耐塩水性
に代表される化学的安定性がルテニウムより更に高いば
かりでなく、酸化ルテニウムが生成しても透明導電膜の
導電性が損なわれることはない。焼付け温度が300℃
未満では酸化ルテニウムの生成が不十分であり、100
0℃を越えると基材が損傷を受けたり膜成分が変質する
などの障害が生じる。 Ruthenium fine particles having an average particle size of 50 nm or less
Applying a paint containing child on the substrate, 300 ° C. after drying to 1
If you deposited and baked at a temperature of 000 ℃, ruthenium fine
Since the particle size of the particles is small, the total surface area of the fine particles is sufficiently large, and at the above-mentioned baking temperature, part of the ruthenium becomes acidic.
To ruthenium iodide . Ruthenium oxide, not chemical stability typified by salt water is just higher than ruthenium, will not be impaired conductivity of the transparent conductive film be generated ruthenium oxide. Baking temperature is 300 ℃
If less than 100%, the formation of ruthenium oxide is insufficient, and
If the temperature exceeds 0 ° C., troubles such as damage to the base material and deterioration of the film components occur.
【0009】酸化ルテニウムの生成と同時に、前記の温
度範囲における焼付けによって得られた透明導電膜中
で、ルテニウム微粒子の少なくとも一部は互いに融合
し、少なくとも部分的に連続した金属薄膜および/また
は金属酸化物薄膜を形成する。このために本発明の透明
導電膜にあっては、単に金属微粒子が接触することによ
って得られるよりも遥かに高い導電性が得られ、その結
果として帯電防止効果・電磁波遮蔽効果が優れているば
かりでなく、透明性が高く耐久性のある透明導電膜が得
られる。ルテニウム微粒子の平均粒径が50nmを越え
ると、酸化ルテニウムの生成も粒子の融合も不十分とな
り、光吸収性が大となって十分な導電性を得ようとする
と透明性が失われ、実用性が低下する。At the same time as the formation of ruthenium oxide, in the transparent conductive film obtained by baking in the above-mentioned temperature range, at least a part of the ruthenium fine particles fuse with each other to form an at least partially continuous metal thin film and / or metal oxide. An object thin film is formed. For this reason, in the transparent conductive film of the present invention, much higher conductivity than that obtained by simply contacting the metal fine particles is obtained, and as a result, the antistatic effect and the electromagnetic wave shielding effect are excellent. Instead, a highly transparent and durable transparent conductive film can be obtained. When the average particle size of the ruthenium fine particles exceeds 50 nm, the formation of ruthenium oxide and the fusion of the particles become insufficient, and the light absorbency becomes large, and if sufficient conductivity is obtained, the transparency is lost. Decrease.
【0010】前記の透明導電膜は、ルテニウムと酸化ル
テニウムとを合わせて10重量%以上含有することが好
ましい。一般に、帯電防止機能に加えて電磁波遮蔽効果
を発揮させるために必要な透明導電膜の導電性能は下記
の式1によって表される。 S=50+10log(1/ρf)+1.7t√(f/ρ) …式1 式中、 S(dB) ;電磁波遮蔽効果 ρ(Ω-cm) ;導電膜の体積固有抵抗 f(MHz) ;電磁波周波数 t(cm) ;導電膜の膜厚 である。ここで膜厚tは、透明性確保の観点から1μm
(1×10−4cm)以下程度とすることが好ましいの
で、式1において膜厚tを含む項を無視すれば、電磁波
遮蔽効果Sは近似的に下記の式2で表すことができる。 S=50+10log(1/ρf) …式2[0010] The transparent conductive film comprises ruthenium and ruthenium oxide.
It is preferred that the content be 10% by weight or more in total with ruthenium . In general, the conductive performance of a transparent conductive film required to exhibit an electromagnetic wave shielding effect in addition to an antistatic function is represented by the following equation 1. S = 50 + 10 log (1 / ρf) + 1.7t√ (f / ρ) Formula 1 In the formula, S (dB): Electromagnetic wave shielding effect ρ (Ω-cm); Volume resistivity of conductive film f (MHz); Electromagnetic wave Frequency t (cm): film thickness of conductive film. Here, the thickness t is 1 μm from the viewpoint of securing transparency.
(1 × 10 −4 cm) or less, the electromagnetic wave shielding effect S can be approximately expressed by the following equation 2 if the term including the film thickness t is ignored in the equation 1. S = 50 + 10log (1 / ρf) Equation 2
【0011】ここで、S(dB)は、値が大きいほど電磁
波遮蔽効果が大きい。一般に、電磁波遮蔽効果は、S>
30dBであれば有効、更にS>60dBであれば優良とみ
なされる。また、規制対象となる電磁波の周波数は一般
に10kHz〜1000MHzの範囲とされるので、透明導電
膜の導電性としては、103Ω-cm以下の体積固有抵抗
値(ρ)が必要になる。すなわち、透明導電膜の体積固
有抵抗値(ρ)は、より低いほうが、より広範な周波数
の電磁波を有効に遮蔽することができることになる。こ
の条件を充たすために、透明導電膜にはルテニウムと酸
化ルテニウムとを合わせて10重量%以上含有させる必
要がある。この含有量が10重量%未満では導電性が低
下し、実質的な電磁波遮蔽効果を得ることが困難にな
る。Here, as the value of S (dB) increases, the electromagnetic wave shielding effect increases. Generally, the electromagnetic wave shielding effect is S>
If it is 30 dB, it is considered to be effective, and if S> 60 dB, it is considered to be excellent. In addition, since the frequency of the electromagnetic wave to be regulated is generally in the range of 10 kHz to 1000 MHz, the conductivity of the transparent conductive film requires a volume resistivity (ρ) of 10 3 Ω-cm or less. That is, the lower the volume specific resistance value (ρ) of the transparent conductive film, the more effectively electromagnetic waves of a wider range of frequencies can be shielded. To satisfy this condition, the transparent conductive film must contain ruthenium and acid.
It is necessary that the total content of ruthenium and ruthenium be 10% by weight or more. If the content is less than 10% by weight, the conductivity is reduced, and it is difficult to obtain a substantial electromagnetic wave shielding effect.
【0012】前記の条件を充たした上で、透明導電膜の
膜厚は、透明性および反射防止性を考慮すると、200
nm以下とすることが好ましい。得られた透明導電膜
は、平滑な被膜であっても、凹凸状の網目構造を有する
被膜であってもよい。After satisfying the above conditions, the thickness of the transparent conductive film should be 200 in consideration of transparency and antireflection properties.
nm or less is preferable. The obtained transparent conductive film may be a smooth film or a film having an uneven network structure.
【0013】本発明の透明導電膜に用いる金属はルテニ
ウムが好ましい。白金族金属の中でもルテニウムは比較
的安価であり、導電性が高く、化学的安定性が高く、し
かも成膜時にはルテニウム微粒子が融合し易いので、高
い透明性を維持しながら導電性をいっそう向上させるこ
とができる。更にルテニウムは、300℃〜1000℃
の範囲内の焼付けによって容易に酸化ルテニウム(Ru
O 2 )に転化する。この酸化ルテニウムは、耐塩水性に
代表される化学的安定性や導電性がきわめて高く、色相
においても400nm〜700nmの可視光域に特定波
長の光吸収ピークが存在しないため、透過画像が不自然
に着色しないという利点がある。更に、少なくとも酸化
ルテニウムに転化してなる透明導電膜は屈折率が最適化
され、反射防止性能の面からも好ましいものとなる。透
明導電膜内でのルテニウムおよび酸化ルテニウムの存在
状態は、微粒子状でもよく、また粒子が互いに融合して
少なくとも部分的に連続した状態であってもよい。The metal used for the transparent conductive film of the present invention is ruthenium.
Um is preferred. Among the platinum group metals, ruthenium is relatively inexpensive, has high conductivity, has high chemical stability, and easily integrates ruthenium fine particles at the time of film formation, thereby further improving conductivity while maintaining high transparency. be able to. Further, ruthenium is 300 ° C to 1000 ° C.
Of ruthenium oxide (Ru)
O 2 ) . This ruthenium oxide has extremely high chemical stability and electrical conductivity typified by salt water resistance, and does not have a light absorption peak of a specific wavelength in the visible light region of 400 nm to 700 nm even in hue. It has the advantage of not coloring. Further, the transparent conductive film converted into at least ruthenium oxide has an optimized refractive index, and is preferable in terms of antireflection performance. The state of ruthenium and ruthenium oxide present in the transparent conductive film may be in the form of fine particles, or may be in a state where the particles are fused with each other and are at least partially continuous.
【0014】本発明の透明導電膜は、前記のルテニウム
および酸化ルテニウムの他に、膜強度、導電性、透明性
などの一層の向上を目的として、必要なら他の成分、例
えばケイ素、アルミニウム、ジルコニウム、セリウム、
チタン、イットリウム、亜鉛、マグネシウム、インジウ
ム、錫、アンチモン、ガリウムなどの酸化物または複合
酸化物の微粒子や、銀、金、銅、ニッケルなどの金属微
粒子や、ケイ素、チタン、ジルコニウムなどの金属アル
コキシドの加水分解物、シリコーンモノマー、シリコー
ンオリゴマーなどの無機系バインダー成分などを適宜含
んでいてもよい。[0014] The transparent conductive film of the present invention comprises the above ruthenium.
In addition to and ruthenium oxide, for the purpose of further improving film strength, conductivity, transparency, and the like, if necessary, other components such as silicon, aluminum, zirconium, cerium,
Fine particles of oxides or composite oxides such as titanium, yttrium, zinc, magnesium, indium, tin, antimony, and gallium; metal fine particles such as silver, gold, copper, and nickel; and metal alkoxides such as silicon, titanium, and zirconium. It may appropriately contain an inorganic binder component such as a hydrolyzate, a silicone monomer, and a silicone oligomer.
【0015】前記の少なくともルテニウム微粒子を含む
塗料は、前記のルテニウムの水性ゾルおよび必要ならそ
の他の成分の水性ゾルを好ましくはアルコールと共に混
合し、得られた混合液を超音波分散機などを用いて分散
することにより容易に調製できる。この塗料を基材上に
塗布するには、スピンコート法、ロールコート法、スプ
レー法、バーコート法、ディップ法、メニスカスコート
法、グラビア印刷法などの通常の薄膜塗布技術がいずれ
も使用可能である。この内、スピンコート法は、短時間
で均一な厚みの薄膜を形成することができるので特に好
ましい塗布法である。塗布後、塗膜を乾燥し、300℃
〜1000℃の範囲内の焼成温度で焼付けることによっ
て、基材の表面にルテニウムの少なくとも一部が酸化ル
テニウムに転化してなる透明導電膜を形成することがで
きる。The above-mentioned paint containing at least ruthenium fine particles is prepared by mixing the above-mentioned aqueous sol of ruthenium and, if necessary, an aqueous sol of other components, preferably with alcohol, and then using an ultrasonic disperser or the like to obtain the resulting mixture. It can be easily prepared by dispersing. In order to apply this paint on a substrate, any of ordinary thin film application techniques such as spin coating, roll coating, spraying, bar coating, dipping, meniscus coating, and gravure printing can be used. is there. Of these, spin coating is a particularly preferred coating method because a thin film having a uniform thickness can be formed in a short time. After application, the coating film is dried,
By baking at a firing temperature in the range of ~ 1000 ° C, at least a part of ruthenium is
A transparent conductive film converted to ruthenium can be formed.
【0016】本発明の透明導電膜は、前記の透明導電膜
を透明導電層とし、この上層および/または下層に、前
記透明導電層の屈折率とは異なる屈折率を有する透明薄
膜が1層以上設けられてなることが好ましい。これによ
って、透明導電膜の界面における外光反射を除去または
軽減することができる。In the transparent conductive film of the present invention, the transparent conductive film is used as a transparent conductive layer, and at least one transparent thin film having a refractive index different from the refractive index of the transparent conductive layer is formed on the upper and / or lower layers. Preferably, it is provided. Thus, external light reflection at the interface of the transparent conductive film can be removed or reduced.
【0017】この透明薄膜は、単に多層薄膜における界
面反射を防止するのみならず、表示装置の表示面に用い
たとき表面を外力から保護する効果も期待されるため、
実用上十分な強度を有する透明薄膜を透明導電層の上層
に設けることが好ましい。This transparent thin film is expected to not only prevent the interface reflection in the multilayer thin film but also protect the surface from external force when used for the display surface of a display device.
It is preferable to provide a transparent thin film having practically sufficient strength on the transparent conductive layer.
【0018】好適な透明薄膜の素材としては、ケイ素、
アルミニウム、ジルコニウム、セリウム、チタン、イッ
トリウム、亜鉛、マグネシウム、インジウム、錫、アン
チモン、ガリウムなどの酸化物、複合酸化物または窒化
物を挙げることができる。特に下式、 M(OR)m Rn (式中、MはSi、TiまたはZrであり、RはC1 〜
C4 のアルキル基であり、mは1〜4の整数であり、か
つnは4−mである)で表される化合物、またはその部
分加水分解物の1種またはそれ以上の混合物から形成さ
れる透明薄膜が好ましい。更に具体的には、膜の表面硬
度が高く、屈折率が比較的低いSiO2 の透明薄膜を形
成し得る素材として、テトラエトキシシラン(Si(O
C2H5)4 )が、薄膜形成性、透明性、透明導電層との
接合性、膜強度および反射防止性能の観点から好適に用
いられる。Preferred materials for the transparent thin film include silicon,
An oxide, a complex oxide, or a nitride of aluminum, zirconium, cerium, titanium, yttrium, zinc, magnesium, indium, tin, antimony, gallium, or the like can be given. In particular, the following formula: M (OR) m R n (where M is Si, Ti or Zr, and R is C 1-
An alkyl group of C 4, m is an integer from 1 to 4, and n is formed from 4-m a is) a compound represented by, or one or more of a mixture of a partial hydrolyzate thereof Transparent thin films are preferred. More specifically, as a material capable of forming a transparent thin film of SiO 2 having a high surface hardness and a relatively low refractive index, tetraethoxysilane (Si (O
C 2 H 5 ) 4 ) is suitably used from the viewpoints of thin film forming property, transparency, bonding property with the transparent conductive layer, film strength and antireflection performance.
【0019】透明薄膜の形成は、透明導電膜の形成に用
いた方法と同様に、前記の成分を含む塗布液(透明薄膜
用塗料)を基材に均一に塗布して成膜する方法によって
行うことができる。塗布は、スピンコート法、ロールコ
ート法、スプレー法、バーコート法、ディップ法、メニ
スカスコート法、グラビア印刷法などの通常の薄膜塗布
技術がいずれも使用可能である。この内、スピンコート
法は、短時間で均一な厚みの薄膜を形成することができ
るので特に好ましい塗布法である。塗布後、塗膜を乾燥
し、焼付けることによって透明薄膜が得られる。The transparent thin film is formed by a method in which a coating solution containing the above-mentioned components (a coating material for a transparent thin film) is uniformly applied to a base material to form a film, similarly to the method used for forming the transparent conductive film. be able to. For coating, any of ordinary thin film coating techniques such as spin coating, roll coating, spraying, bar coating, dipping, meniscus coating, and gravure printing can be used. Of these, spin coating is a particularly preferred coating method because a thin film having a uniform thickness can be formed in a short time. After coating, the coating film is dried and baked to obtain a transparent thin film.
【0020】一般に、多層薄膜における界面反射防止能
は、薄膜の屈折率と膜厚、および積層薄膜数により決定
されるため、本発明の透明導電膜においても、積層膜数
を考慮して透明導電膜および透明薄膜の厚みを適宜設計
することにより、効果的な反射防止効果が得られる。反
射防止能を有する多層膜では、防止しようとする反射光
の波長をλとするとき、2層構成の反射防止膜であれば
基材側から高屈折率層と低屈折率層とをそれぞれλ/
4,λ/4、またはλ/2,λ/4の光学的膜厚とする
ことによって効果的に反射を防止することができる。ま
た3層構成の反射防止膜であれば基材側から中屈折率
層、高屈折率層および低屈折率層の順にλ/4,λ/
2,λ/4の光学的膜厚とすることが有効とされる。In general, the antireflection ability of an interface in a multilayer thin film is determined by the refractive index and thickness of the thin film and the number of laminated thin films. By appropriately designing the thickness of the film and the transparent thin film, an effective antireflection effect can be obtained. In a multilayer film having antireflection ability, when the wavelength of reflected light to be prevented is λ, if the antireflection film has a two-layer structure, the high refractive index layer and the low refractive index layer are respectively λ from the substrate side. /
By setting the optical film thickness to 4, λ / 4, or λ / 2, λ / 4, reflection can be effectively prevented. In the case of a three-layer antireflection film, λ / 4 and λ / are used in order of the medium refractive index layer, the high refractive index layer, and the low refractive index layer from the substrate side.
An optical film thickness of 2, λ / 4 is effective.
【0021】特に、製造上の容易さや経済性を考慮する
と、透明導電層の上層に、屈折率が比較的低く、ハード
コート性を兼ね備えたSiO2 膜(屈折率1.46)を
λ/4の膜厚で形成することが好適である。In particular, considering the ease of manufacture and economy, an SiO 2 film (refractive index: 1.46) having a relatively low refractive index and having a hard coat property is formed on the upper layer of the transparent conductive layer at λ / 4. It is preferable that the film is formed to have a film thickness.
【0022】透明導電層を含む2層以上からなる本発明
の透明導電膜は、透明導電層および前記の透明薄膜の焼
付けを順次に行ってもよく、または同時に行ってもよ
い。例えば透明導電膜用塗料を表示装置の表示面に塗布
し、その上層に透明薄膜用塗料を塗布し、乾燥後に30
0℃〜1000℃の温度で一括焼き付けることによっ
て、透明導電層と透明薄膜とを同時に形成し、低反射透
明導電膜を形成してもよい。In the transparent conductive film of the present invention comprising two or more layers including a transparent conductive layer, the baking of the transparent conductive layer and the transparent thin film may be performed sequentially or simultaneously. For example, a paint for a transparent conductive film is applied to the display surface of a display device, a paint for a transparent thin film is applied thereon, and after drying, 30
The transparent conductive layer and the transparent thin film may be simultaneously formed by baking at a temperature of 0 ° C. to 1000 ° C. to form a low-reflection transparent conductive film.
【0023】前記透明導電膜の最外層には、凹凸を有す
る透明薄膜を設けることが好ましい。この凹凸を有する
透明薄膜は、透明導電膜の表面反射光を散乱させ、表示
面に優れた防眩性を与える効果がある。It is preferable to provide a transparent thin film having irregularities on the outermost layer of the transparent conductive film. The transparent thin film having the irregularities scatters light reflected on the surface of the transparent conductive film, and has an effect of giving excellent antiglare properties to the display surface.
【0024】本発明の透明導電膜の少なくとも何れか1
層には、着色材が含有されていてもよい。この着色材
は、透過画像のコントラストの向上や、透過光・反射光
の色彩調整のために用いられる。この着色材としては、
例えばモノアゾピグメント、キナクリドン、アイアンオ
キサイド・エロー、ジスアゾピグメント、フタロシアニ
ングリーン、フタロシアニンブルー、シアニンブルー、
フラバンスロンエロー、ジアンスラキノリルレッド、イ
ンダンスロンブルー、チオインジゴボルドー、ペリノン
オレンジ、ペリレンスカーレット、ペリレンレッド17
8、ペリレンマルーン、ジオキサジンバイオレット、イ
ソインドリンエロー、ニッケルニトロソエロー、マダー
レーキ、銅アゾメチンエロー、アニリンブラック、アル
カリブルー、亜鉛華、酸化チタン、弁柄、酸化クロム、
鉄黒、チタンエロー、コバルトブルー、セルリアンブル
ー、コバルトグリーン、アルミナホワイト、ビリジア
ン、カドミウムエロー、カドミウムレッド、朱、リトポ
ン、黄鉛、モリブデートオレンジ、クロム酸亜鉛、硫酸
カルシウム、硫酸バリウム、炭酸カルシウム、鉛白、群
青、マンガンバイオレット、コバルトバイオレット、エ
メラルドグリーン、紺青、カーボンブラックなどの有機
および無機顔料、ならびにアゾ染料、アントラキノン染
料、インジゴイド染料、フタロシアニン染料、カルボニ
ウム染料、キノンイミン染料、メチン染料、キノリン染
料、ニトロ染料、ニトロソ染料、ベンゾキノン染料、ナ
フトキノン染料、ナフタルイミド染料、ペリノン染料な
どの染料を挙げることができる。これらの着色材は単独
で、または2種以上を組み合わせて用いることができ
る。At least one of the transparent conductive films of the present invention
The layer may contain a coloring material. This coloring material is used for improving the contrast of a transmitted image and adjusting the color of transmitted light and reflected light. As this coloring material,
For example, monoazo pigment, quinacridone, iron oxide yellow, disazo pigment, phthalocyanine green, phthalocyanine blue, cyanine blue,
Flavanthrone yellow, dianthraquinolyl red, indanthrone blue, thioindigo bordeaux, perinone orange, perylene scarlet, perylene red 17
8, perylene maroon, dioxazine violet, isoindoline yellow, nickel nitroso yellow, madder lake, copper azomethine yellow, aniline black, alkali blue, zinc white, titanium oxide, red iron oxide, chrome oxide,
Iron black, titanium yellow, cobalt blue, cerulean blue, cobalt green, alumina white, viridian, cadmium yellow, cadmium red, vermilion, lithopone, graphite, molybdate orange, zinc chromate, calcium sulfate, barium sulfate, calcium carbonate, lead Organic and inorganic pigments such as white, ultramarine, manganese violet, cobalt violet, emerald green, navy blue, and carbon black, as well as azo dyes, anthraquinone dyes, indigoid dyes, phthalocyanine dyes, carbonium dyes, quinone imine dyes, methine dyes, quinoline dyes, and nitro dyes Dyes such as dyes, nitroso dyes, benzoquinone dyes, naphthoquinone dyes, naphthalimide dyes and perinone dyes can be mentioned. These coloring materials can be used alone or in combination of two or more.
【0025】用いる着色材の種類と量は、対応する透明
導電膜の光学的な膜特性に対応して適宜選択されるべき
である。透明性薄膜の吸光度Aは、一般的には下記の式
で表される。 A=log10(I0 /I)=εCD 式中、I0 ;入射光、I;透過光、C;色濃度、D;光
距離、ε;モル吸光係数である。The type and amount of the coloring material to be used should be appropriately selected according to the optical film characteristics of the corresponding transparent conductive film. The absorbance A of the transparent thin film is generally represented by the following equation. A = log 10 (I 0 / I) = εCD where I 0 is incident light, I is transmitted light, C is color density, D is light distance, and ε is molar extinction coefficient.
【0026】本発明の透明導電膜では、一般にモル吸光
係数がε>10の着色材が用いられる。また、着色材の
配合量は、使用する着色材のモル吸光係数に依存して変
わるが、一般に、着色材を配合した積層膜および単層膜
の吸光度Aが0.0004〜3abs.の範囲内となるよう
な量であることが好ましい。これらの条件が満たされな
い場合は透明度および/または反射防止効果が低下す
る。上記着色材を透明導電層に配合する場合、その配合
量は、金属の含有量に対して20重量%以下、特に10
重量%以下とすることが好ましい。10重量%を越える
と、導電性の低下が認められ、20重量%を越えると、
電磁波遮蔽効果に支障を来すことになる。In the transparent conductive film of the present invention, a coloring material having a molar extinction coefficient ε> 10 is generally used. The amount of the coloring material varies depending on the molar extinction coefficient of the coloring material used. Generally, the absorbance A of the laminated film and the single-layer film containing the coloring material is in the range of 0.0004 to 3 abs. Preferably, the amount is such that If these conditions are not satisfied, the transparency and / or the antireflection effect will decrease. When the coloring material is blended in the transparent conductive layer, the blending amount is 20% by weight or less, particularly 10% by weight, based on the metal content.
% By weight or less. If it exceeds 10% by weight, a decrease in conductivity is observed.
This will hinder the electromagnetic wave shielding effect.
【0027】本発明の表示装置は、前記の何れかの透明
導電膜が表示面上に形成されてなっている。この表示装
置は、表示面の帯電が防止されているので画像表示面に
埃などが付着せず、電磁波が遮蔽されるので各種の電磁
波障害が防止され、光透過性に優れているので画像が明
るく、透過画像の色相が自然であり、膜厚が均一なので
表示面の外観が良好であり、耐スクラッチ性が良好であ
り、しかも耐塩水性が高いので塩霧に曝されるような環
境にあっても耐久性が高い。また透明導電層の他に、前
記の透明薄膜および/または凹凸を有する透明薄膜が形
成されていれば、外光に対する反射防止効果および/ま
たは防眩効果も得られる。In the display device of the present invention, any one of the transparent conductive films described above is formed on a display surface. This display device prevents the charging of the display surface, so that dust and the like do not adhere to the image display surface, shields electromagnetic waves, prevents various types of electromagnetic wave interference, and is excellent in light transmissivity. It is bright, the hue of the transmitted image is natural, the film thickness is uniform, the appearance of the display surface is good, the scratch resistance is good, and the salt water resistance is high, so it is suitable for environments exposed to salt fog. Even high durability. If the transparent thin film and / or the transparent thin film having irregularities are formed in addition to the transparent conductive layer, an antireflection effect and / or an antiglare effect for external light can be obtained.
【0028】[0028]
【実施例】以下、実施例により本発明を具体的に説明す
るが、本発明はこれらの実施例によって限定されるもの
ではない。実施例および比較例に共通の原液として、下
記のものを調製した。 (ルテニウム水性ゾル)0.15ミリモル/lの塩化ル
テニウムを含む水溶液と、0.024ミリモル/lの水
素化ホウ素ナトリウム水溶液とを混合し、得られたコロ
イド状分散液を濃縮し、0.198モル/lのルテニウ
ム微粒子を含む水性ゾルを得た。ルテニウム微粒子の平
均粒径は20nmであった。 (銀水性ゾル)クエン酸ナトリウム二水和物(14
g)、硫酸第一鉄(7.5g)を溶解させた水溶液(6
0g)を5℃に保持した状態で、これに硝酸銀(2.5
g)を溶解した水溶液(25g)を加え、赤褐色の銀ゾ
ルを得た。この銀ゾルを遠心分離により水洗して不純物
イオンを除去した後、純水を加えて0.185モル/l
の銀微粒子を含む水性ゾルを得た。銀微粒子の平均粒径
は10nmであった。 (透明薄膜塗料A)テトラエトキシシラン(0.8g)
と0.1N塩酸(0.8g)とエチルアルコール(9
8.4g)とを混合し、均一な溶液とした。EXAMPLES The present invention will now be described specifically with reference to examples, but the present invention is not limited to these examples. The following were prepared as stock solutions common to Examples and Comparative Examples. (Ruthenium aqueous sol) An aqueous solution containing 0.15 mmol / l ruthenium chloride and a 0.024 mmol / l aqueous sodium borohydride solution were mixed, and the obtained colloidal dispersion was concentrated to 0.198 mmol / l. An aqueous sol containing mol / l of ruthenium fine particles was obtained. The average particle size of the ruthenium fine particles was 20 nm. (Silver aqueous sol) sodium citrate dihydrate (14
g) and an aqueous solution (6 g) in which ferrous sulfate (7.5 g) is dissolved.
0 g) was kept at 5 ° C., and silver nitrate (2.5 g) was added thereto.
An aqueous solution (25 g) in which g) was dissolved was added to obtain a red-brown silver sol. The silver sol was washed with water by centrifugation to remove impurity ions, and then added with pure water to obtain 0.185 mol / l.
An aqueous sol containing silver fine particles was obtained. The average particle size of the silver fine particles was 10 nm. (Transparent thin film paint A) Tetraethoxysilane (0.8 g)
And 0.1 N hydrochloric acid (0.8 g) and ethyl alcohol (9
8.4 g) to obtain a uniform solution.
【0029】(実施例1)透明導電膜塗料の調製 : ルテニウム水性ゾル 40g イソプロピルアルコール 10g エチルアルコール 50g 上記の成分を混合し、得られた混合液を超音波分散機
(BRANSON ULTRASONICS社製「ソニファイヤー45
0」)で分散し、透明導電膜塗料を調製した。Example 1 Preparation of transparent conductive film paint : Ruthenium aqueous sol 40 g Isopropyl alcohol 10 g Ethyl alcohol 50 g 45
0 ") to prepare a transparent conductive film paint.
【0030】成膜:上記の透明導電膜塗料をブラウン管
の表示面にスピンコーターを用いて塗布し、乾燥後、こ
の塗布面に前記の透明薄膜塗料Aを、同様にスピンコー
ターを用いて塗布し、このブラウン管を乾燥機に入れ、
450℃で1時間焼付け処理して低反射透明導電膜を形
成することにより、反射防止、高導電膜を有する実施例
1の陰極線管を作成した。 Film formation : The above-mentioned transparent conductive film paint is applied to the display surface of a cathode ray tube using a spin coater, and after drying, the above-mentioned transparent thin film paint A is applied to the application surface similarly using a spin coater. , Put this CRT in the dryer,
The cathode ray tube of Example 1 having an anti-reflection and high conductive film was formed by baking at 450 ° C. for 1 hour to form a low-reflection transparent conductive film.
【0031】(実施例2)透明導電膜塗料の調製 : ルテニウム水性ゾル 40g イソプロピルアルコール 10g エチルアルコール 50g 上記の成分を混合し、実施例1と同様に処理して透明導
電膜塗料を調製した。(Example 2) Preparation of transparent conductive film paint : Ruthenium aqueous sol 40 g isopropyl alcohol 10 g ethyl alcohol 50 g The above components were mixed and treated in the same manner as in Example 1 to prepare a transparent conductive film paint.
【0032】成膜:上記の透明導電膜塗料を用い、焼付
け温度を600℃とした以外は実施例1と同様に処理し
て、反射防止、高導電膜を有する実施例2の陰極線管を
作成した。 Film formation : A cathode ray tube of Example 2 having an anti-reflection and high conductive film was prepared by using the above transparent conductive film paint and treating it in the same manner as in Example 1 except that the baking temperature was 600 ° C. did.
【0033】(比較例1)透明導電膜塗料の調製 : ルテニウム水性ゾル 40g イソプロピルアルコール 10g エチルアルコール 50g 上記の成分を混合し、実施例1と同様に処理して透明導
電膜塗料を調製した。 成膜 :上記の透明導電膜塗料を用い、焼付け温度を15
0℃とした以外は実施例1と同様に処理して反射防止、
高導電膜を有する比較例1の陰極線管を作成した。(Comparative Example 1)Preparation of transparent conductive film paint : Aqueous ruthenium sol 40 g isopropyl alcohol 10 g ethyl alcohol 50 g
An electrocoat was prepared. Film formation : Using the above transparent conductive film paint, baking temperature of 15
Except that the temperature was set to 0 ° C., the same treatment as in Example 1 was performed to prevent reflection,
A cathode ray tube of Comparative Example 1 having a high conductive film was prepared.
【0034】(比較例2)透明導電膜塗料の調製 : 銀水性ゾル 40g イソプロピルアルコール 10g エチルアルコール 50g 上記の成分を混合し、実施例1と同様に処理して透明導
電膜塗料を調製した。 成膜 :上記の透明導電膜塗料を用い、比較例1と同様に
処理して反射防止、高導電膜を有する比較例2の陰極線
管を作成した。(Comparative Example 2)Preparation of transparent conductive film paint : Aqueous silver sol 40 g isopropyl alcohol 10 g ethyl alcohol 50 g
An electrocoat was prepared. Film formation : Using the above transparent conductive film paint, as in Comparative Example 1.
Cathode ray of Comparative Example 2 having anti-reflection and high conductive film by processing
A tube was created.
【0035】(評価測定)陰極線管上に形成された低反
射透明導電膜の性能を下記の装置または方法で測定し、
また外観を目視により評価した。 X線回折分析:フィリップス社製「PW1710」 表面抵抗 :三菱油化社製「ロレスタAP」(4端子
法) 電磁波遮蔽性:0.5MHz基準で前記式1により計算 耐塩水性 :塩水浸漬3日後の0.5MHz電磁波遮蔽
性 スクラッチ試験:1kgの荷重下に、シャープペンシル
先端の金属部分で膜表面を擦り、傷の付き具合を目視に
より評価。 ○;傷なし △;やや傷付き ×;傷付き 透過率 :東京電色社製「Automatic Haze Meter H
III DP」 ヘーズ :東京電色社製「Automatic Haze meter HII
I DP」 透過率差 :日立製作所製「U-3500」形自記分光光度計
を用い、可視光領域で の最大透過率と最小透過率との差を求めた。 (可視光領域における最大−最小透過率差が小さいほど
透過率がよりフラットになり、透過画像の色相が鮮明と
なる。特に10%以下では、透過画像の色彩が黒色に近
づき、より高度な鮮明さを持つようになる。) 視感反射率:EG&G GAMMASCIENTIFIC社製「MODEL C-11」 反射色 :ミノルタカメラ社製「CR-300」 (CIE表色系を使用し、CIE色度図における白色点(x=
0.3137,y=0.3198)からのズレの距離を
Δx,Δyを用いて√(Δx2 +Δy2 )と表した。こ
れにより、√(Δx2 +Δy2 )の値がより「0」に近
いものほど反射色が白色、すなわち目に優しい自然光に
近いものとなる。) 視認性 :低反射性能、反射色、透過色を含む総合評
価 ○ ;良好 ○△;やや良好 △ ;可 △×;やや不良 × ;不良 以上の評価試験の内、物理化学的試験結果を表1に、光
学的試験結果を表2に示す。(Evaluation Measurement) The performance of the low-reflection transparent conductive film formed on the cathode ray tube was measured by the following apparatus or method.
The appearance was visually evaluated. X-ray diffraction analysis: "PW1710" manufactured by Philips Co., Ltd. Surface resistance: "Loresta AP" manufactured by Mitsubishi Yuka Co., Ltd. (4-terminal method) Electromagnetic wave shielding property: Calculated by the above formula 1 based on 0.5 MHz Salt water resistance: 3 days after salt water immersion 0.5 MHz electromagnetic wave shielding property Scratch test: Under a load of 1 kg, the film surface was rubbed with a metal part at the tip of a mechanical pencil, and the degree of scratching was visually evaluated. ○: no scratch △: slightly scratched ×: scratched Transmittance: “Automatic Haze Meter H” manufactured by Tokyo Denshoku
III DP "Haze:" Automatic Haze meter HII manufactured by Tokyo Denshoku Co., Ltd. "
IDP ”Transmittance difference: The difference between the maximum transmittance and the minimum transmittance in the visible light region was determined using a“ U-3500 ”type self-recording spectrophotometer manufactured by Hitachi, Ltd. (The smaller the maximum-minimum transmittance difference in the visible light region, the flatter the transmittance and the sharper the hue of the transmitted image. Particularly, when the difference is 10% or less, the color of the transmitted image approaches black, and the higher the sharpness. Luminous reflectance: "MODEL C-11" manufactured by EG & G GAMMASCIENTIFIC Co., Ltd. Reflection color: "CR-300" manufactured by Minolta Camera Co. (White using CIE color system and CIE chromaticity diagram Point (x =
0.3137, y = 0.3198), and Δ (Δx 2 + Δy 2 ) using Δx and Δy. Thus, the closer the value of √ (Δx 2 + Δy 2 ) is to “0”, the whiter the reflection color becomes, that is, the closer to the natural light that is easy on the eyes. ) Visibility: Comprehensive evaluation including low reflection performance, reflection color, and transmission color ○: good ○ △; somewhat good △: acceptable △ ×; somewhat poor ×: poor Among the above evaluation tests, the physicochemical test results are shown. Table 1 shows the optical test results.
【0036】[0036]
【表1】 [Table 1]
【表2】 [Table 2]
【0037】表1の結果から、本発明に従いルテニウム
微粒子を含む塗料を塗布し、450℃または600℃で
焼成した実施例1、実施例2の陰極線管は、X線回折分
析の結果、透明導電膜に酸化ルテニウムの存在が確認さ
れ、焼成温度が150℃の比較例1では酸化ルテニウム
の存在は認められなかった。この実施例1、実施例2を
比較例1と比べると、物理化学的特性(表1)で表面抵
抗は大差なく、電磁波遮蔽性、耐塩水性および耐スクラ
ッチ性は大幅に改善されたことがわかる。光学的特性
(表2)では、視感反射率が減少し視認性に優れ、反射
色は白色点に近くなり透過画像が自然な色に見えるよう
に改善された。これらの光学的特性の総合として実施例
1、実施例2の視認性評価は、比較例1に比べて明らか
に優れたものとなった。比較例2は導電材料として銀を
用いたが、耐塩水性が悪く耐久性に乏しいばかりでな
く、視感反射率が大きく反射色の偏りも大きいので視認
性の点でも不良と判定された。From the results shown in Table 1, the cathode ray tubes of Examples 1 and 2 which were coated with a coating material containing ruthenium microparticles according to the present invention and baked at 450 ° C. or 600 ° C. were analyzed by X-ray diffraction. The presence of ruthenium oxide was confirmed in the film, and the presence of ruthenium oxide was not recognized in Comparative Example 1 in which the firing temperature was 150 ° C. Comparing Example 1 and Example 2 with Comparative Example 1, it can be seen that the surface resistance is not much different from the physicochemical characteristics (Table 1), and that the electromagnetic wave shielding property, salt water resistance and scratch resistance are greatly improved. . In the optical characteristics (Table 2), the luminous reflectance was reduced, the visibility was excellent, and the reflected color was close to the white point, and the transmitted image was improved so as to look natural. As a whole of these optical characteristics, the visibility evaluation of Examples 1 and 2 was clearly superior to Comparative Example 1. In Comparative Example 2, silver was used as the conductive material. However, not only the salt water resistance was poor and the durability was poor, but also the luminous reflectance was large and the reflection color was largely biased.
【0038】[0038]
【発明の効果】本発明の透明導電膜は、平均粒径が50
nm以下のルテニウム微粒子を含む塗料を塗布、乾燥し
た後、300℃〜1000℃の温度で焼付けて形成さ
れ、前記ルテニウムの一部が酸化ルテニウムに転化して
なる透明導電層を有するものであるので、優れた帯電防
止効果と電磁波遮蔽効果とを有し、かつ耐塩水性、耐ス
クラッチ性が高い。またこの透明導電膜が形成された表
示装置は表示面の透明性が高く透過画像の色相が自然で
鮮明である。また、前記透明導電層に含まれるルテニウ
ムは、その一部が前記焼付け温度で容易に酸化ルテニウ
ムに転化し、比較的安価でありながら、耐塩水性、化学
的安定性、耐スクラッチ性が更に改善され、色相面にお
いても透過画像がより自然となる利点がある。透明導電
層の上層および/または下層に、透明導電層の屈折率と
は異なる屈折率を有する透明薄膜が1層以上設けられて
いれば、低反射の透明導電膜が得られる。本発明の表示
装置は、前記の透明導電膜が表示面上に形成されてなる
ものであるので、優れた帯電防止効果と電磁波遮蔽効果
とを有し、耐塩水性が良好で耐久性があり、耐スクラッ
チ性が高く、表示面の透明性が高く、かつ透過画像の色
相が自然で鮮明であり、実用性の高い表示装置となる。The transparent conductive film of the present invention has an average particle size of 50.
After applying and drying a paint containing ruthenium fine particles having a particle size of not more than 300 nm, it is formed by baking at a temperature of 300 ° C. to 1000 ° C., and has a transparent conductive layer in which part of the ruthenium is converted to ruthenium oxide . It has excellent antistatic effect and electromagnetic wave shielding effect, and has high salt water resistance and scratch resistance. Further, the display device on which the transparent conductive film is formed has high transparency of the display surface, and the hue of the transmitted image is natural and clear. Further, ruthenium contained in the transparent conductive layer
Some of the ruthenium oxide is readily available at the baking temperature.
In spite of being relatively inexpensive, the salt water resistance, chemical stability, and scratch resistance are further improved, and there is an advantage that a transmission image becomes more natural also on a hue surface. If at least one transparent thin film having a refractive index different from the refractive index of the transparent conductive layer is provided on the upper layer and / or the lower layer of the transparent conductive layer, a transparent conductive film having low reflection can be obtained. Since the display device of the present invention is one in which the transparent conductive film is formed on a display surface, the display device has an excellent antistatic effect and an electromagnetic wave shielding effect, has good salt water resistance, has durability, A highly practical display device having high scratch resistance, high transparency of the display surface, and a natural and clear hue of the transmitted image is provided.
フロントページの続き (56)参考文献 特開 平8−77832(JP,A) 特開 平9−286936(JP,A) 特開 平7−235220(JP,A) 特開 平5−120921(JP,A) 特開 平9−161561(JP,A) 特開 昭61−118931(JP,A) 特開 平6−119816(JP,A) 特開 平6−49394(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01B 5/14 H01B 13/00 B05D 5/12 C09D 5/24 Continuation of front page (56) References JP-A-8-77832 (JP, A) JP-A-9-286936 (JP, A) JP-A-7-235220 (JP, A) JP-A-5-120921 (JP) JP-A-9-161561 (JP, A) JP-A-61-118931 (JP, A) JP-A-6-119816 (JP, A) JP-A-6-49394 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01B 5/14 H01B 13/00 B05D 5/12 C09D 5/24
Claims (7)
粒子を含む塗料を塗布、乾燥した後、300℃〜100
0℃の温度で焼付けて形成され、前記ルテニウムの一部
が酸化ルテニウムに転化してなる透明導電層を有するこ
とを特徴とする透明導電膜。A ruthenium fine particle having an average particle size of 50 nm or less.
After applying and drying paint containing particles , 300 ° C ~ 100
Formed by baking at a temperature of 0 ° C., and a part of the ruthenium
Has a transparent conductive layer converted into ruthenium oxide .
ニウムとを合わせて10重量%以上含有してなることを
特徴とする請求項1記載の透明導電膜。2. The method according to claim 1, wherein the transparent conductive layer is made of ruthenium and ruthenium oxide.
The transparent conductive film according to claim 1 , wherein the total content of the transparent conductive film is 10% by weight or more.
層に、前記透明導電層の屈折率とは異なる屈折率を有す
る透明薄膜を1層以上設けてなることを特徴とする請求
項1または2記載の透明導電膜。 3. An upper layer and / or a lower layer of the transparent conductive layer.
The layer has a refractive index different from that of the transparent conductive layer.
Characterized in that at least one transparent thin film is provided.
Item 3. The transparent conductive film according to Item 1 or 2.
る透明薄膜が設けられてなることを特徴とする請求項
1、2または3記載の透明導電膜。 4. An outermost layer of said transparent conductive film has irregularities.
Wherein a transparent thin film is provided.
4. The transparent conductive film according to 1, 2, or 3.
着色材が含有されてなることを特徴とする請求項1ない
し4のいずれか1項記載の透明導電膜。 5. At least one layer of the transparent conductive film includes:
2. The method according to claim 1, wherein a coloring material is contained.
5. The transparent conductive film according to claim 4.
て10重量%以上含有してなる透明導電層を有する透明
導電膜の製造方法であって、 平均粒径が50nm以下のルテニウム微粒子を含む塗料
を塗布・乾燥し、その後、300℃〜1000℃の温度
で焼付け、前記ルテニウムの一部を酸化ルテニウムに転
化させることを特徴とする透明導電膜の製造方法。 6. A combination of ruthenium and ruthenium oxide
Having a transparent conductive layer containing at least 10% by weight
A method for producing a conductive film, comprising a coating material containing ruthenium fine particles having an average particle size of 50 nm or less.
Is applied and dried, and then at a temperature of 300 ° C. to 1000 ° C.
Bake and convert part of the ruthenium to ruthenium oxide
A method for producing a transparent conductive film, comprising:
透明導電膜が表示面上に形成されてなることを特徴とす
る表示装置。 7. The method according to claim 1, wherein
A transparent conductive film is formed on a display surface.
Display device.
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JP18287497A JP3356968B2 (en) | 1997-07-08 | 1997-07-08 | Transparent conductive film, method of manufacturing the same, and display device |
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JP18287497A JP3356968B2 (en) | 1997-07-08 | 1997-07-08 | Transparent conductive film, method of manufacturing the same, and display device |
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JP2002234039A Division JP2003178626A (en) | 2002-08-09 | 2002-08-09 | Transparent conductive film and display device |
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JP3356968B2 true JP3356968B2 (en) | 2002-12-16 |
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JP2001158966A (en) * | 1999-12-01 | 2001-06-12 | Ebara Corp | Method of manufacturing metal or metal compound thin film |
JP2002190214A (en) * | 2000-12-20 | 2002-07-05 | Sumitomo Osaka Cement Co Ltd | Transparent conductive film and display device using the same |
KR100786854B1 (en) * | 2001-02-06 | 2007-12-20 | 삼성에스디아이 주식회사 | Display filter membrane, manufacturing method thereof and display device including same |
US7507447B2 (en) | 2002-02-26 | 2009-03-24 | Fujifilm Corporation | Transparent conductive film, method for producing same and method for forming pattern |
JP4621912B2 (en) * | 2005-02-25 | 2011-02-02 | 国立大学法人信州大学 | Transparent thin film electrode and electrochemical storage device having the same |
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