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JP3353397B2 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JP3353397B2
JP3353397B2 JP17402893A JP17402893A JP3353397B2 JP 3353397 B2 JP3353397 B2 JP 3353397B2 JP 17402893 A JP17402893 A JP 17402893A JP 17402893 A JP17402893 A JP 17402893A JP 3353397 B2 JP3353397 B2 JP 3353397B2
Authority
JP
Japan
Prior art keywords
cell
power supply
wiring
column direction
cell column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP17402893A
Other languages
Japanese (ja)
Other versions
JPH0729978A (en
Inventor
孝 作田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP17402893A priority Critical patent/JP3353397B2/en
Publication of JPH0729978A publication Critical patent/JPH0729978A/en
Application granted granted Critical
Publication of JP3353397B2 publication Critical patent/JP3353397B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Design And Manufacture Of Integrated Circuits (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、マスタースライス方式
または標準セル方式の半導体集積回路に係わり、特に内
部セル列領域の電源配線の改良に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a master slice type or standard cell type semiconductor integrated circuit, and more particularly to an improvement in power supply wiring in an internal cell column region.

【0002】[0002]

【従来の技術】従来、マスタースライス方式または標準
セル方式を用いた半導体集積回路の電源配線は、図3お
よび図4に示すような電源構成が用いられている。図3
においてセル列方向に1層目電源配線がセル列ごとに設
けられている。また、図4はセル列方向の1層目電源配
線を強化する目的で設けられた直交する2層目電源配線
を有する。
2. Description of the Related Art Conventionally, power supply wiring of a semiconductor integrated circuit using a master slice method or a standard cell method has a power supply structure as shown in FIGS. FIG.
In the example, a first-layer power supply wiring is provided for each cell column in the cell column direction. FIG. 4 has orthogonal second-layer power supply wires provided for the purpose of reinforcing the first-layer power supply wires in the cell column direction.

【0003】図3の電源配線の幅は特にセル列中央部で
の電源配線抵抗による電位降下を許容範囲に押さえるた
め、および電源配線を流れる電流により引き起こされる
エレクトロ・マイグレーションを長期に渡り起こさない
ように考慮して決定されている。また、図4の縦方向の
電源配線13と14とはセル列方向の電源配線を補強す
る目的で設けられ、セル列方向の電源配線幅は図3の構
成に比較して細くできる。
The width of the power supply wiring shown in FIG. 3 is to keep the potential drop due to the resistance of the power supply wiring in the center part of the cell row within an allowable range, and to prevent electromigration caused by the current flowing through the power supply wiring for a long time. It is determined in consideration of. Further, the power supply wirings 13 and 14 in the vertical direction in FIG. 4 are provided for the purpose of reinforcing the power supply wiring in the cell column direction, and the width of the power supply wiring in the cell column direction can be made narrower than the configuration in FIG.

【0004】[0004]

【発明が解決しようとする課題】しかし、マスタースラ
イス方式または標準セル方式を用いた半導体集積回路に
おいては、搭載される論理回路を構成する論理セルの配
置は自動で行われ、高速動作セルやクロックバッファ等
の電流消費量の大きいセルが同一セル列に並ぶ可能性も
あり、セル列方向電源配線は前述の電位降下やエレクト
ロマイグレーションに対処するため、セル列領域内で一
律に余裕のある幅で構成されており、図3の電源構成に
おいてはセルの高さが高くなり、チップサイズが大きく
なるという問題が有った。
However, in a semiconductor integrated circuit using a master slice system or a standard cell system, the arrangement of logic cells constituting a mounted logic circuit is automatically performed, and high-speed operation cells and clocks are not provided. There is a possibility that cells with large current consumption, such as buffers, may be arranged in the same cell column, and the power line in the cell column direction has a uniform width in the cell column region in order to cope with the aforementioned potential drop and electromigration. In the power supply configuration of FIG. 3, there is a problem that the height of the cell is increased and the chip size is increased.

【0005】また、図4の電源構成においては図3のも
のに較べセル列方向電源配線の幅を細く設定できるが、
縦方向の電源配線本数を適度に増やす必要があり、前記
縦方向の電源配線が締める配線トラックが多くなるた
め、セル間信号配線の障害になり、結果的に図3の電源
構成と同様にチップサイズが大きくなるという問題が有
った。
Further, in the power supply configuration of FIG. 4, the width of the power supply line in the cell column direction can be set narrower than that of FIG.
It is necessary to increase the number of power supply wires in the vertical direction appropriately, and the number of wiring tracks to be fastened by the power supply wires in the vertical direction increases. There was a problem that the size became large.

【0006】[0006]

【課題を解決するための手段】本発明の半導体集積回路
は、複数の論理セルが配置されたセル列が多段に配置さ
れたチップからなる半導体集積回路であって、前記セル
列の列方向と直行する方向に、多段のセル列を挟むよう
にチップ周辺部に配置され、N層目の配線(Nは自然
数。)によって形成された電源配線と、前記電源配線に
各々接続され、各セル列毎にセル列方向に配置され、N
層とは異なるM層目の配線(MはNと異なる自然数。)
によって形成されたセル列方向電源配線と、1つの前記
論理セルの電源部で、前記1つの論理セルが配置された
所定の前記セル列の前記セル列方向電源配線と前記所定
のセル列に隣接するセル列の前記セル列方向電源配線間
のみを最短距離で電気的に接続するように前記列方向と
直行する方向に配置され、N層目の配線によって形成さ
れた配線と、を有することを特徴とする。
A semiconductor integrated circuit according to the present invention is a semiconductor integrated circuit comprising a chip in which a plurality of cell columns in which a plurality of logic cells are disposed are arranged in multiple stages. In a direction perpendicular to the chip, a plurality of cell columns are arranged in the peripheral portion of the chip, and a power supply line formed by an N-th layer wiring (N is a natural number) is connected to the power supply line. Are arranged in the cell column direction every
The wiring of the Mth layer different from the layer (M is a natural number different from N)
And the power supply unit of one of the logic cells is adjacent to the cell column direction power supply wiring of the predetermined cell column in which the one logic cell is arranged and the predetermined cell column. And a wiring formed by an N-th layer wiring, which is arranged in a direction perpendicular to the column direction so as to electrically connect only the cell column direction power supply wiring of the cell column to be connected with the shortest distance. Features.

【0007】[0007]

【0008】[0008]

【作用】このように構成された半導体集積回路において
は、電流消費量の大きい論理セルを選択し、その電源部
をその論理セルが含まれるセル列に設けられたセル列方
向電源配線も含めて2以上のセル列方向電源配線とほぼ
最短の配線にて電気的に接続することで、その電源部に
流れ込むあるいはその電源部から流れ出す電流は前記最
短の配線により複数のセル列方向電源配線に分散され
る。
In the semiconductor integrated circuit configured as described above, a logic cell consuming a large amount of current is selected, and its power supply section includes a cell column direction power supply wiring provided in a cell column including the logic cell. By being electrically connected to two or more power supply lines in the cell column direction by the shortest wiring, the current flowing into or out of the power supply unit is distributed to a plurality of power supply lines in the cell column direction by the shortest wiring. Is done.

【0009】[0009]

【実施例】以下、本発明について図面に基づいて説明す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

【0010】図1は本発明の一実施例に関する半導体集
積回路のセル列領域の電源構成を模式的に表す図であ
る。同図に示すように、チップ周辺部2より2層目金属
配線5、スルーホール9およびセル列方向1層目金属配
線7を経由して各論理セル4にVDDの電位が与えられ
る。また、同様にしてチップ周辺部2より2層目金属配
線6およびセル列方向1層目金属配線8を経由して各論
理セル4にVSSの電位が与えられる。論理セル10は
回路を構成する論理セルの中から消費電力の大きさを考
慮して選ばれた論理セルであり、その電源部はセル列方
向に直交する2層目金属配線11および2層目金属配線
12により、そのセル列を挟む上下セル列に対して設け
られたVDD配線7とVSS配線8とに最短距離にて接
続されている。
FIG. 1 is a diagram schematically showing a power supply configuration in a cell column region of a semiconductor integrated circuit according to one embodiment of the present invention. As shown in the figure, VDD is applied to each logic cell 4 from the chip peripheral portion 2 via the second-layer metal wiring 5, the through hole 9 and the first-layer metal wiring 7 in the cell column direction. Similarly, a VSS potential is applied to each logic cell 4 from the chip peripheral portion 2 via the second-layer metal wiring 6 and the first-layer metal wiring 8 in the cell column direction. The logic cell 10 is a logic cell selected from the logic cells constituting the circuit in consideration of the magnitude of power consumption, and its power supply unit has a second-layer metal wiring 11 and a second-layer metal wiring 11 orthogonal to the cell column direction. The metal wiring 12 is connected to the VDD wiring 7 and the VSS wiring 8 provided for the upper and lower cell rows sandwiching the cell row at the shortest distance.

【0011】図2は本発明の一実施例に関する半導体集
積回路を構成する論理セルライブラリに含まれる一セル
の物理的配線パターン(インバータ回路)を模式的に表
す図である。同図に示すように、VDD電源部71とV
SS電源部81とは、拡散領域またはポリシリコンゲー
ト21と1層目金属配線との導通を取るコンタクトホー
ル15と1層目金属配線、さらにVDD2層目金属配線
11とVSS2層目金属配線12およびスルーホール9
とで構成されている。この図においては省略してある
が、VDD2層目金属配線11とVSS2層目金属配線
12とは、配置時に図1に示した半導体集積回路を構成
する場合に両隣のセル列に施されたセル列方向VDD1
層目金属配線7とVSS1層目金属配線8とに各々届く
位置まで延出されている。
FIG. 2 is a diagram schematically showing a physical wiring pattern (inverter circuit) of one cell included in a logic cell library constituting a semiconductor integrated circuit according to one embodiment of the present invention. As shown in FIG.
The SS power supply unit 81 includes a contact hole 15 for establishing conduction between the diffusion region or the polysilicon gate 21 and the first-layer metal wiring, a first-layer metal wiring, a VDD second-layer metal wiring 11, a VSS second-layer metal wiring 12, Through hole 9
It is composed of Although not shown in this figure, the VDD second-layer metal wiring 11 and the VSS second-layer metal wiring 12 are the cells provided in the adjacent cell columns when the semiconductor integrated circuit shown in FIG. Column direction VDD1
It extends to a position where it reaches the metal wiring 7 of the first layer and the metal wiring 8 of the VSS first layer, respectively.

【0012】[0012]

【発明の効果】本発明によれば、論理回路の動作を考慮
して選ばれた消費電流の大きい論理セルの電源インピー
ダンスを低く設定できるために、内部セル列領域全体に
設けられるセル列方向電源配線を細く設定でき、また図
4に示す補強用のセル列に直交する電源配線を持つ半導
体集積回路において本発明を適用すると前記直交する電
源配線本数を少なく設定でき、結果としてチップ面積を
縮小できる。
According to the present invention, the power supply impedance of a logic cell having a large current consumption selected in consideration of the operation of a logic circuit can be set low, so that a power supply in a cell column direction provided over the entire internal cell column region is provided. When the present invention is applied to a semiconductor integrated circuit having a power supply line orthogonal to the reinforcing cell row shown in FIG. 4, the number of the orthogonal power supply lines can be set small, and as a result, the chip area can be reduced. .

【0013】また、本発明の実施例においては2配線層
を使用した半導体集積回路についてセル列方向電源配線
を1層目金属配線として説明してあるが、2層目金属配
線をセル列方向電源配線とする場合においても、前記最
短距離接続配線を1層目金属配線とすることで同様の効
果を有する。
In the embodiment of the present invention, the power supply wiring in the cell column direction is described as the first-layer metal wiring in the semiconductor integrated circuit using the two wiring layers. Even in the case of wiring, the same effect can be obtained by using the shortest distance connection wiring as the first layer metal wiring.

【0014】さらに、3配線層以上を使用する半導体集
積回路においては、セル列方向電源配線に使用される配
線層と異なる単独の配線層あるいは同じく異なる複数の
配線層を前記最短距離接続配線に用いることで同様の効
果を有する。
Further, in a semiconductor integrated circuit using three or more wiring layers, a single wiring layer different from the wiring layer used for the power supply wiring in the cell column direction or a plurality of wiring layers different from each other is used for the shortest distance connection wiring. This has a similar effect.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の半導体集積回路のセル列領域電源構成
を模式的に表す図である。
FIG. 1 is a diagram schematically illustrating a power supply configuration of a cell column region of a semiconductor integrated circuit according to the present invention.

【図2】本発明の半導体集積回路を構成する論理セルラ
イブラリに含まれる一セル(インバータ回路)の物理的
配線パターンを模式的に表す図である。
FIG. 2 is a diagram schematically showing a physical wiring pattern of one cell (inverter circuit) included in a logic cell library constituting the semiconductor integrated circuit of the present invention.

【図3】従来の半導体集積回路のセル列領域電源構成を
模式的に表す図である。
FIG. 3 is a diagram schematically illustrating a power supply configuration of a cell column region of a conventional semiconductor integrated circuit.

【図4】従来の半導体集積回路のセル列領域電源構成を
模式的に表す図である。
FIG. 4 is a diagram schematically illustrating a power supply configuration of a cell column region of a conventional semiconductor integrated circuit.

【符号の説明】[Explanation of symbols]

1・・・半導体集積回路 2・・・入出力等を構成する周辺部 3・・・セル列 4・・・論理セル 5・・・VDD2層目金属配線(セル列直交方向) 6・・・VSS2層目金属配線(セル列直交方向) 7・・・VDD1層目金属配線(セル列方向) 8・・・VSS1層目金属配線(セル列方向) 9・・・1−2層間スルーホール 10・・・回路から選択された論理セル 11・・・VDD電源部と両隣のセル列方向VDD電源
配線とを電気的に接続する2層目金属配線 12・・・VSS電源部と両隣のセル列方向VSS電源
配線とを電気的に接続する2層目金属配線 13・・・セル列方向VDD1層目金属配線を補強する
ためのセル列に直交するVDD2層目金属配線 14・・・セル列方向VSS1層目金属配線を補強する
ためのセル列に直交するVSS2層目金属配線 15・・・コンタクトホール 16・・・P−well領域 17・・・N+拡散領域 18・・・P+拡散領域 19・・・P+ガードリング 20・・・N+ガードリング 21・・・ポリシリコンゲート 71・・・論理セルVDD電源部 81・・・論理セルVSS電源部
DESCRIPTION OF SYMBOLS 1 ... Semiconductor integrated circuit 2 ... Peripheral part which comprises an input / output etc. 3 ... Cell row 4 ... Logic cell 5 ... VDD 2nd layer metal wiring (cell row orthogonal direction) 6 ... VSS second layer metal wiring (cell column orthogonal direction) 7... VDD first layer metal wiring (cell column direction) 8... VSS first layer metal wiring (cell column direction) 9... 1-2 interlayer through hole 10 ... Logic cell selected from the circuit 11 ... Second-layer metal wiring for electrically connecting the VDD power supply to the VDD power supply wiring in the cell row direction on both sides 12 ... VSS power supply and the cell row on both sides Second-layer metal wiring for electrically connecting to direction VSS power supply wiring 13... Cell row direction VDD Second-layer metal wiring orthogonal to cell row for reinforcing first-layer metal wiring 14... Cell row direction In cell row to reinforce VSS first layer metal wiring Orthogonal VSS second layer metal wiring 15 contact hole 16 P-well region 17 N + diffusion region 18 P + diffusion region 19 P + guard ring 20 N + guard ring 21 ... Polysilicon gate 71 ... Logic cell VDD power supply section 81 ... Logic cell VSS power supply section

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 複数の論理セルが配置されたセル列が多
段に配置されたチップからなる半導体集積回路であっ
て、 前記セル列の列方向と直行する方向に、多段のセル列を
挟むようにチップ周辺部に配置され、N層目の配線(N
は自然数。)によって形成された電源配線と、 前記電源配線に各々接続され、各セル列毎にセル列方向
に配置され、N層とは異なるM層目の配線(MはNと異
なる自然数。)によって形成されたセル列方向電源配線
と、 1つの前記論理セルの電源部で、前記1つの論理セルが
配置された所定の前記セル列の前記セル列方向電源配線
と前記所定のセル列に隣接するセル列の前記セル列方向
電源配線間のみを最短距離で電気的に接続するように前
記列方向と直行する方向に配置され、N層目の配線によ
って形成された配線と、 を有する半導体集積回路。
1. A semiconductor integrated circuit comprising a chip in which a plurality of cell columns in which a plurality of logic cells are disposed are arranged in multiple stages, wherein the multi-stage cell columns are sandwiched in a direction orthogonal to the column direction of the cell columns. The wiring (N
Is a natural number. ), And an M-th layer wiring (M is a natural number different from N) that is connected to the power wiring and is arranged in the cell column direction for each cell column and is different from the N layer. A cell column direction power supply line, and a cell adjacent to the predetermined cell column in the cell column direction power supply line of a predetermined cell column in which the one logic cell is arranged, in a power supply unit of one logic cell A wiring formed in the direction perpendicular to the column direction and electrically formed by an N-th layer wiring so that only the cell column direction power supply wiring of the column is electrically connected with the shortest distance.
JP17402893A 1993-07-14 1993-07-14 Semiconductor integrated circuit Expired - Fee Related JP3353397B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17402893A JP3353397B2 (en) 1993-07-14 1993-07-14 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17402893A JP3353397B2 (en) 1993-07-14 1993-07-14 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0729978A JPH0729978A (en) 1995-01-31
JP3353397B2 true JP3353397B2 (en) 2002-12-03

Family

ID=15971375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17402893A Expired - Fee Related JP3353397B2 (en) 1993-07-14 1993-07-14 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP3353397B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6000829A (en) 1996-09-11 1999-12-14 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit capable of compensating for flucuations in power supply voltage level and method of manufacturing the same
JP3768433B2 (en) * 2001-11-19 2006-04-19 株式会社ルネサステクノロジ Semiconductor device design method
CN103997550A (en) 2006-07-20 2014-08-20 日本电气株式会社 Portable terminal

Also Published As

Publication number Publication date
JPH0729978A (en) 1995-01-31

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