JP3325732B2 - Voltage controlled piezoelectric oscillator - Google Patents
Voltage controlled piezoelectric oscillatorInfo
- Publication number
- JP3325732B2 JP3325732B2 JP30809194A JP30809194A JP3325732B2 JP 3325732 B2 JP3325732 B2 JP 3325732B2 JP 30809194 A JP30809194 A JP 30809194A JP 30809194 A JP30809194 A JP 30809194A JP 3325732 B2 JP3325732 B2 JP 3325732B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric oscillator
- voltage controlled
- gate
- voltage
- controlled piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Networks Using Active Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】ＩＣチップの小型化に適した電圧
制御圧電発振器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage controlled piezoelectric oscillator suitable for downsizing an IC chip.
【０００２】[0002]
【従来の技術】図５に従来技術の一般的な電圧制御圧電
発振器の回路図を示す。一般的なコルピッツの発振回路
の圧電振動子の接地側に可変容量ダイオードＤ１のカソ
ード側を接地に、アノード側を圧電振動子Ｘの端子に接
続し、この接続点に抵抗を介して周波数を制御する電圧
を供給する。この電圧制御端子ＶＣの電圧を可変する
と、可変容量ダイオードＤ１に印加される電圧の変化に
対応して容量が変化して、電圧制御圧電発振器の周波数
が変化する。2. Description of the Related Art FIG. 5 shows a circuit diagram of a general voltage controlled piezoelectric oscillator according to the prior art. Connect the cathode side of the variable capacitance diode D1 to the ground side and the anode side to the terminal of the piezoelectric vibrator X on the ground side of the piezoelectric vibrator of a general Colpitts oscillation circuit, and control the frequency via a resistor at this connection point Supply voltage. When the voltage at the voltage control terminal VC is varied, the capacitance changes in response to the change in the voltage applied to the variable capacitance diode D1, and the frequency of the voltage controlled piezoelectric oscillator changes.
【０００３】[0003]
【発明が解決しようとする課題】従来技術では、電圧制
御圧電発振器の周波数可変範囲を広げようとすると、可
変容量ダイオードＤ１の容量の可変幅を大きくしなけれ
ばならない。大容量の可変容量ダイオードＤ１を用いた
電圧制御圧電発振器の発振回路をＩＣ化する場合には、
容量の大きな可変容量ダイオードＤ１はＩＣチップ内で
広い面積を必要としてＩＣチップが大きくなるという課
題があった。In the prior art, in order to widen the variable frequency range of the voltage controlled piezoelectric oscillator, the variable width of the variable capacitance diode D1 must be increased. When an oscillation circuit of a voltage controlled piezoelectric oscillator using a large-capacity variable capacitance diode D1 is formed into an IC,
There is a problem that the variable capacitance diode D1 having a large capacity requires a large area in the IC chip and the IC chip becomes large.
【０００４】[0004]
【課題を解決するための手段】ミラー効果を利用して小
さい容量で大容量の効果を得ることで、ＩＣのチップを
小型にできて課題を解決した。By using the Miller effect to obtain a large-capacity effect with a small capacitance, the IC chip can be miniaturized and the problem has been solved.
【０００５】[0005]
【背景】近年電子機器が小型化されて来るのに伴い、発
振器も小型化をせまられている。従って発振回路がＩＣ
化されるケースが増大している。まして電圧制御圧電発
振器の周波数可変幅を大きくしようとすると、可変容量
ダイオードＤ１の容量を大きくする必要があり、そのた
めには、ＩＣチップの面積が広く必要になる。これは、
小型化の方向に逆行する。そこで、増幅度Ａの増幅器の
入力と出力間に入れたコンデンサＣ１を回路の入力側か
ら見た容量Ｃｉｎは、Ｃｉｎ＝（１＋Ａ）・Ｃ１とな
る。即ち小さい容量で大容量の効果をもたらすミラー効
果を採用した。ミラー効果自体は新しいものではない
が、本発明はミラー効果を利用してＩＣチップの小型化
を図ったばかりでなく、ミラー効果に使用している増幅
器の増幅度を電圧制御することで、容量を大きく変化さ
せている。2. Description of the Related Art As electronic devices have been miniaturized in recent years, oscillators have also been miniaturized. Therefore, the oscillation circuit is IC
Cases are increasing. In order to increase the frequency variable width of the voltage-controlled piezoelectric oscillator, it is necessary to increase the capacitance of the variable capacitance diode D1, which requires a large IC chip area. this is,
It goes against the direction of miniaturization. Therefore, the capacitance Cin of the capacitor C1 inserted between the input and the output of the amplifier having the amplification factor A as viewed from the input side of the circuit is Cin = (1 + A) · C1. In other words, a mirror effect that provides a large capacity effect with a small capacity is employed. Although the Miller effect itself is not new, the present invention not only uses the Miller effect to reduce the size of the IC chip, but also controls the amplification degree of the amplifier used for the Miller effect by voltage to reduce the capacitance. It has been greatly changed.
【０００６】[0006]
【実施例】図３に本発明の（ミラー効果を利用した）実
施例の回路図を示す。本例ではＭＯＳＦＥＴ（ＦＥＴ
１）を用い、入力端子Ｙ、Ｙ’間の容量Ｃｉｎは、回路
の増幅度ＡとコンデンサＣ１とによりＣｉｎ＝（１＋
Ａ）・Ｃ１となり、さらに増幅度ＡはＦＥＴ１のゲート
電圧Ｖｉｎを制御することで可変できるので、Ｃｉｎは
ＦＥＴ１のゲート電圧を制御することで可変できる。FIG. 3 shows a circuit diagram of an embodiment (using the mirror effect) of the present invention. In this example, the MOSFET (FET
1), the capacitance Cin between the input terminals Y and Y 'is determined by the circuit amplification factor A and the capacitor C1 as Cin = (1+
A) · C1 and the amplification factor A can be varied by controlling the gate voltage Vin of the FET1, so that Cin can be varied by controlling the gate voltage of the FET1.
【０００７】（実施例１）図１に本発明の実施例を示
す。本実施例ではトランジスタのコルピッツ回路を用い
ている。圧電振動子Ｘの一方端は発振部のトランジスタ
Ｑ１のベースに接続され、他端は、ＭＯＳＦＥＴ（ＦＥ
Ｔ１）のゲートに接続されている。ＦＥＴ１のゲートに
抵抗ＲＧを介して制御電圧ＶＣが印加される。制御電圧
ＶＣにおいてＦＥＴ１の増幅度が変化させられる。圧電
振動子Ｘと直列に容量が接続されるが、ミラー効果によ
ってコンデンサＣ１のよりも見かけ上大きな容量が入っ
ているのと同じであり、４ＭＨｚの基本波の圧電振動子
を用いて、図４に示すようにコンデンサＣ１に１０ｐＦ
を用いた時に周波数変化量が３００×１０-6以上を確保
することができた。さらにＦＥＴ１の特性に配慮するこ
とにより、もっと大きな周波数変化をさせることができ
る。(Embodiment 1) FIG. 1 shows an embodiment of the present invention. In this embodiment, a Colpitts circuit of transistors is used. One end of the piezoelectric vibrator X is connected to the base of the transistor Q1 of the oscillation section, and the other end is connected to a MOSFET (FE).
T1) is connected to the gate. The control voltage VC is applied to the gate of the FET 1 via the resistor RG. At the control voltage VC, the amplification of the FET 1 is changed. The capacitance is connected in series with the piezoelectric vibrator X, but the capacitance is apparently larger than that of the capacitor C1 due to the Miller effect. As shown in FIG.
When using the method, a frequency variation of 300 × 10 −6 or more could be secured. Further, by considering the characteristics of the FET 1, a larger frequency change can be achieved.
【０００８】（実施例２）図２にＣＭＯＳ回路の発振器
を用いた例を示す。ＣＭＯＳＱ２入力部にＦＥＴ１を接
続し、ゲート電圧を変化させることにより周波数を変化
させている。なお電圧制御圧電発振器に使用する圧電振
動子は、水晶振動子、セラミック振動子等が使用され
る。(Embodiment 2) FIG. 2 shows an example using a CMOS circuit oscillator. FET1 is connected to the input of the CMOS Q2, and the frequency is changed by changing the gate voltage. As the piezoelectric vibrator used for the voltage controlled piezoelectric oscillator, a crystal vibrator, a ceramic vibrator, or the like is used.
【０００９】[0009]
【発明の効果】本発明により電圧制御圧電発振器の発振
回路をＩＣ化した場合に、大容量の可変容量ダイオード
を使用しないので、チップの大きさを小さくできる効果
があり小型化が可能になり、その上コストも安価にでき
た。According to the present invention, when the oscillation circuit of the voltage-controlled piezoelectric oscillator is integrated into an IC, a large-capacity variable-capacitance diode is not used, so that the chip size can be reduced and the size can be reduced. In addition, the cost was reduced.
【図１】図１は、本発明の実施例を示すトランジスタに
よる電圧制御圧電発振器の回路図である。FIG. 1 is a circuit diagram of a transistor-based voltage controlled piezoelectric oscillator according to an embodiment of the present invention.
【図２】図２は、本発明の実施例を示すＣＭＯＳによる
電圧制御圧電発振器の回路図である。FIG. 2 is a circuit diagram of a CMOS voltage controlled piezoelectric oscillator showing an embodiment of the present invention.
【図３】図３は，本発明の実施例を示すミラー効果の回
路図である。FIG. 3 is a circuit diagram of a Miller effect showing an embodiment of the present invention.
【図４】図４は、本発明の実施例における制御電圧に対
する周波数変化を示すグラフである。FIG. 4 is a graph showing a frequency change with respect to a control voltage in the example of the present invention.
【図５】図５は，従来技術を示す回路図である。FIG. 5 is a circuit diagram showing a conventional technique.
Ｑ１ トランジスタ Ｑ２ ＣＭＯＳＩＣ Ｘ 圧電振動子 ＦＥＴ１ ＭＯＳＦＥＴ Ｃ１ コンデンサ Ｒｆ 帰還抵抗 ＲＧ 抵抗 Ｄ１ 可変容量ダイオード Q1 Transistor Q2 CMOSIC X Piezoelectric vibrator FET1 MOSFET C1 Capacitor Rf Feedback resistance RG Resistance D1 Variable capacitance diode
Claims (2)
回路を用いた電圧制御圧電発振器において、 該トランジスタのベースに接続された圧電振動子の他の
端子をＭＯＳＦＥＴのゲートに接続し、該ＭＯＳＦＥＴ
のゲートとドレイン間にコンデンサを接続し、該ＭＯＳ
ＦＥＴのゲートに制御電圧を印加することを特徴とする
電圧制御圧電発振器。1. A voltage controlled piezoelectric oscillator using a Colpitts type oscillation circuit using a transistor, wherein another terminal of a piezoelectric vibrator connected to a base of the transistor is connected to a gate of a MOSFET, and
A capacitor is connected between the gate and drain of
A voltage controlled piezoelectric oscillator characterized in that a control voltage is applied to a gate of an FET.
に帰還抵抗と圧電振動子を並列に接続した発振回路を用
いた電圧制御圧電発振器において、 該ＣＭＯＳＩＣインバータの入力端子にコンデンサを介
してＭＯＳＦＥＴのゲートを接続し、該ＭＯＳＦＥＴの
ゲートとドレイン間にコンデンサを接続し、該ＭＯＳＦ
ＥＴのゲートに制御電圧を印加することを特徴とする電
圧制御圧電発振器。2. A voltage controlled piezoelectric oscillator using an oscillation circuit in which a feedback resistor and a piezoelectric vibrator are connected in parallel between an input and an output of a CMOSIC inverter, wherein a gate of a MOSFET is connected to an input terminal of the CMOSIC inverter via a capacitor. And a capacitor is connected between the gate and drain of the MOSFET.
A voltage controlled piezoelectric oscillator characterized in that a control voltage is applied to a gate of an ET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30809194A JP3325732B2 (en) | 1994-11-17 | 1994-11-17 | Voltage controlled piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30809194A JP3325732B2 (en) | 1994-11-17 | 1994-11-17 | Voltage controlled piezoelectric oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08148937A JPH08148937A (en) | 1996-06-07 |
| JP3325732B2 true JP3325732B2 (en) | 2002-09-17 |
Family
ID=17976764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30809194A Expired - Fee Related JP3325732B2 (en) | 1994-11-17 | 1994-11-17 | Voltage controlled piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3325732B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002185253A (en) * | 2000-12-13 | 2002-06-28 | Seiko Epson Corp | Oscillator circuit |
| JP4649275B2 (en) * | 2005-06-21 | 2011-03-09 | 日本電波工業株式会社 | Voltage controlled crystal oscillator |
-
1994
- 1994-11-17 JP JP30809194A patent/JP3325732B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08148937A (en) | 1996-06-07 |
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