JP3323076B2 - Conductive ceramics - Google Patents
Conductive ceramicsInfo
- Publication number
- JP3323076B2 JP3323076B2 JP23032496A JP23032496A JP3323076B2 JP 3323076 B2 JP3323076 B2 JP 3323076B2 JP 23032496 A JP23032496 A JP 23032496A JP 23032496 A JP23032496 A JP 23032496A JP 3323076 B2 JP3323076 B2 JP 3323076B2
- Authority
- JP
- Japan
- Prior art keywords
- volume resistivity
- ceramics
- less
- oxide
- tio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 title claims description 48
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 22
- 238000005452 bending Methods 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 9
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 8
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 15
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 239000000523 sample Substances 0.000 description 11
- 229910004283 SiO 4 Inorganic materials 0.000 description 9
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052839 forsterite Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910017625 MgSiO Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000013001 point bending Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910017639 MgSi Inorganic materials 0.000 description 2
- 229910017682 MgTi Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- NFYLSJDPENHSBT-UHFFFAOYSA-N chromium(3+);lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+3].[La+3] NFYLSJDPENHSBT-UHFFFAOYSA-N 0.000 description 1
- 229910052634 enstatite Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- BBCCCLINBSELLX-UHFFFAOYSA-N magnesium;dihydroxy(oxo)silane Chemical compound [Mg+2].O[Si](O)=O BBCCCLINBSELLX-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Conductive Materials (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、磁気記録装置に組
み込まれているスペーサ、シム、ハブなどの磁気ディス
ク基板用支持部材、電着塗装用ノズル、その他の静電気
除去用部品、半導体・薄膜プロセスの抵抗評価用プロー
ブ、セラミックセンサー、セラミックヒーターなどに使
用される導電性セラミックスに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a support member for a magnetic disk substrate such as a spacer, a shim and a hub incorporated in a magnetic recording apparatus, a nozzle for electrodeposition coating, other components for removing static electricity, and a semiconductor / thin film process. And a conductive ceramic used for a resistance evaluation probe, a ceramic sensor, a ceramic heater, and the like.
【0002】[0002]
【従来の技術】従来、導電性セラミックスとして用いら
れているセラミックスとしては、炭化珪素質セラミック
スやランタンクロマイト等のペロブスカイト系セラミッ
クスがあり、セラミックヒータやセラミクセンサーなど
に使用されている。2. Description of the Related Art Conventionally, ceramics used as conductive ceramics include silicon carbide ceramics and perovskite ceramics such as lanthanum chromite, which are used for ceramic heaters and ceramic sensors.
【0003】また、その他に構造部品材料用セラミック
スに導電性をもった金属酸化物、金属窒化物、金属炭化
物などを添加した導電性セラミックスも開発されてお
り、例えば、導電付与剤としてTiO2 、TiC、Ni
O、CoO等を添加して還元雰囲気下で焼成したアルミ
ナ質やジルコニア質等の導電性セラミックスが知られて
いる(特開平2−295009号、特開平1−2433
88号公報参照)。In addition, conductive ceramics obtained by adding conductive metal oxides, metal nitrides, metal carbides and the like to ceramics for structural component materials have also been developed. For example, TiO 2 , TiC, Ni
Conductive ceramics such as alumina and zirconia which are fired in a reducing atmosphere by adding O, CoO, etc. are known (JP-A-2-295509, JP-A-1-24333).
No. 88).
【0004】[0004]
【発明が解決しようとする課題】ところが、上記炭化珪
素質セラミックスは難焼結材であるために非酸化性雰囲
気でかつ2000℃以上の温度で焼成しなければなら
ず、また、ホットプレスや熱間静水圧プレス(HIP)
を行う必要があることから生産性が悪くコストが高くな
るといった課題があった。However, since the above-mentioned silicon carbide-based ceramics are difficult to sinter, they must be fired in a non-oxidizing atmosphere and at a temperature of 2000 ° C. or higher. Isostatic Press (HIP)
Therefore, there is a problem that productivity is low and the cost is high because of the necessity of performing.
【0005】また、ペロブスカイト系セラミックスや導
電付与剤としてNiO、CoO等を添加したアルミナ質
やジルコニア質の導電性セラミックスも炭化珪素質セラ
ミックス同様、ホットプレスや熱間静水圧プレス(HI
P)、あるいは還元雰囲気での焼成を行わなければなら
ないことから生産性が悪かった。しかも、ペロブスカイ
ト系セラミックスは一般的に曲げ強度が10kg/mm
2 未満と低く、構造部品材料としては不向きであった。[0005] Perovskite-based ceramics and alumina- and zirconia-based conductive ceramics to which NiO, CoO, etc. are added as a conductivity-imparting agent are also hot pressed or hot isostatically pressed (HI) as well as silicon carbide-based ceramics.
P), or sintering in a reducing atmosphere must be performed, resulting in poor productivity. Moreover, perovskite ceramics generally have a bending strength of 10 kg / mm.
It was lower than 2 and was unsuitable as a structural component material.
【0006】一方、導電性材料として使用する場合、特
に、静電気を除去するには一般的に1011Ω・cm未満
の体積固有抵抗値を有することが要求されているが、導
電付与剤としてTiO2 やTiCを添加したアルミナ質
の導電性セラミックスでは1012Ω・cm程度の抵抗値
しか得られず、体積固有抵抗値が1011Ω・cm未満の
導電性セラミックスを得ることは難しいものであった。On the other hand, when used as a conductive material, it is generally required to have a volume resistivity of less than 10 11 Ω · cm to remove static electricity. Alumina-based conductive ceramics to which 2 or TiC is added can only obtain a resistance of about 10 12 Ω · cm, and it is difficult to obtain a conductive ceramic having a volume resistivity of less than 10 11 Ω · cm. Was.
【0007】そこで、本発明は製造が容易でかつ構造部
品材料として使用可能な機械的特性を有するとともに、
体積固有抵抗値が1011Ω・cm未満である導電性セラ
ミックスを得ることを目的とするものである。Therefore, the present invention has mechanical properties that are easy to manufacture and can be used as a structural component material,
It is an object of the present invention to obtain a conductive ceramic having a volume resistivity of less than 10 11 Ω · cm.
【0008】[0008]
【課題を解決するための手段】即ち、本発明は上記課題
に鑑み、MgOとSiO2 の複合酸化物を主体とし、酸
化クロム及び/又は酸化チタンを含んでなり、その体積
固有抵抗値が1011Ω・cm未満でかつ曲げ強度が10
kg/mm2 以上である導電性セラミックスを特徴とす
る。SUMMARY OF THE INVENTION In view of the above-mentioned problems, the present invention mainly comprises a composite oxide of MgO and SiO 2 and contains chromium oxide and / or titanium oxide and has a volume resistivity of 10%. Less than 11 Ω · cm and bending strength is 10
It is characterized by a conductive ceramic of not less than kg / mm 2 .
【0009】[0009]
【発明の実施の形態】以下、本発明の実施形態を説明す
る。本発明に係る導電性セラミックスは、MgOとSi
O2 の複合酸化物を主体とし、導電付与剤として酸化ク
ロム及び/又は酸化クロムを含んでなり、体積固有抵抗
値が1011Ω・cm未満の導電性を有するとともに、曲
げ強度で10kg/mm2 以上の機械的特性を有するも
のである。Embodiments of the present invention will be described below. The conductive ceramic according to the present invention comprises MgO and Si.
It is mainly composed of a composite oxide of O 2 , contains chromium oxide and / or chromium oxide as a conductivity-imparting agent, has a volume resistivity of less than 10 11 Ω · cm, and has a flexural strength of 10 kg / mm. It has two or more mechanical properties.
【0010】ここで、主体をなすMgOとSiO2 の複
合酸化物とは、最終焼結体において主にMg2 SiO4
(フォルステライト)のことであり、他にMgSiO3
(エンスタタイト)を含んでいても良い。通常、Mg2
SiO4 のみからなるセラミックスは15kg/mm2
程度の曲げ強度をもった絶縁材料であるが、本件発明者
はこのセラミックスに酸化クロム(Cr2 O3 )及び/
又は酸化チタン(TiO)を含有させることで導電性が
得られることを見出し、その体積固有抵抗値を1011Ω
・cm未満としたものである。Here, the main component of the composite oxide of MgO and SiO 2 is mainly Mg 2 SiO 4 in the final sintered body.
(Forsterite), and MgSiO 3
(Enstatite). Usually Mg 2
Ceramics consisting of SiO 4 alone is 15 kg / mm 2
Although it is an insulating material having a degree of bending strength, the present inventor has applied chromium oxide (Cr 2 O 3 ) and / or
Alternatively, it has been found that conductivity can be obtained by adding titanium oxide (TiO), and its volume resistivity is set to 10 11 Ω.
・ It is less than cm.
【0011】即ち、酸化クロム(Cr2 O3 )は室温に
おいて107 Ω・cm程度の抵抗値を有し、酸化チタン
(TiO)は室温において10-4Ω・cm程度の抵抗値
を有することから、これらの添加量を適宜調整すること
で1011Ω・cm未満の体積固有抵抗値をもった導電性
セラミックスとすることができる。その為、帯電する静
電気を速やかに逃がして除去することができるため、磁
気記録装置に組み込まれている複数枚の磁気ディスク基
板を所定間隔に位置決め保持するスペーサ、シム、ハブ
などの支持部材や磁気テープの走行を支持する案内部
材、自動車等の塗装に使用される電着塗装用ノズルなど
の静電気除去用部品として好適に使用することができる
他、セラミックヒーターやセラミックセンサーあるいは
半導体・薄膜プロセスの抵抗評価用プローブとしても用
いることができる。That is, chromium oxide (Cr 2 O 3 ) has a resistance of about 10 7 Ω · cm at room temperature, and titanium oxide (TiO) has a resistance of about 10 -4 Ω · cm at room temperature. Therefore, a conductive ceramic having a volume resistivity of less than 10 11 Ω · cm can be obtained by appropriately adjusting the amounts of these additives. Therefore, since the charged static electricity can be quickly released and removed, a supporting member such as a spacer, a shim, a hub for positioning and holding a plurality of magnetic disk substrates incorporated in the magnetic recording apparatus at a predetermined interval, or a magnetic member. It can be suitably used as a guide member supporting the running of the tape, a component for removing static electricity such as a nozzle for electrodeposition coating used for painting of automobiles, etc., and a ceramic heater, a ceramic sensor, or a semiconductor / thin film process resistance. It can also be used as an evaluation probe.
【0012】ただし、導電性を得るために酸化クロム
(Cr2 O3 )及び/又は酸化チタン(TiO)の含有
量が多くなると曲げ強度等の機械的特性が大幅に低下し
て、上記用途に使用すると破損する恐れがあり構造部品
材料としては使用難い。その為、上記導電性セラミック
スの曲げ強度は10kg/mm2 以上有することが必要
である。However, when the content of chromium oxide (Cr 2 O 3 ) and / or titanium oxide (TiO) is increased to obtain conductivity, mechanical properties such as bending strength are greatly reduced, and the above-mentioned applications are not considered. If used, it may be damaged, making it difficult to use as a structural component material. Therefore, it is necessary for the conductive ceramic to have a bending strength of 10 kg / mm 2 or more.
【0013】なお、導電性セラミックスを構成する各成
分の存在については、X線回折により分析した時に上記
各成分のピークの存在を確認することにより判断するこ
とができる。また、最終焼結体においては、MgOとS
iO2 の複合酸化物と導電付与剤との反応により得られ
る反応物として、酸化チタン(TiO)が存在する時に
はMgTi2 O5 が、酸化クロム(Cr2 O3 )が存在
する時にはMgCr2O4 がそれぞれ反応物として生成
されるが、これらの反応物が導電性セラミックス中に存
在しても何ら差し支えない。The presence of each component constituting the conductive ceramic can be determined by confirming the presence of the peak of each component when analyzed by X-ray diffraction. In the final sintered body, MgO and S
as a reaction product obtained by reaction of the composite oxide of iO 2 and the conductive material, MgCr 2 O when the MgTi 2 O 5 when the titanium oxide (TiO) is present, the presence of chromium oxide (Cr 2 O 3) 4 are produced as reactants, respectively, and these reactants may be present in the conductive ceramic without any problem.
【0014】さらに、本発明では他の導電付与剤として
酸化鉄(FeO、Fe2 O3 、Fe3 O4 )を上記酸化
クロム(Cr2 O3 )及び/又は酸化チタン(TiO)
の一部と置換して添加することもできる。Further, in the present invention, iron oxide (FeO, Fe 2 O 3 , Fe 3 O 4 ) is used as another conductivity-imparting agent in the above-mentioned chromium oxide (Cr 2 O 3 ) and / or titanium oxide (TiO).
Can be added in place of a part of.
【0015】ところで、このような本発明の導電性セラ
ミックスを得るには、MgOとSiO2 の複合酸化物と
してMg2 SiO4 やMgSiO3 を用意するととも
に、導電付与剤として酸化クロム(Cr2 O3 )及び/
又は酸化チタン(TiO)を用意する。そして、上記M
g2 SiO4 やMgSiO3 からなる複合酸化物を40
〜90重量%に対し、酸化クロム(Cr2 O3 )及び/
又は酸化チタン(TiO)を60〜10重量%の範囲で
添加する。In order to obtain such a conductive ceramic of the present invention, Mg 2 SiO 4 or MgSiO 3 is prepared as a composite oxide of MgO and SiO 2 , and chromium oxide (Cr 2 O 4) is used as a conductivity-imparting agent. 3 ) and / or
Alternatively, titanium oxide (TiO) is prepared. And the above M
g 2 SiO 4 or MgSiO 3 complex oxide of 40
Chromium oxide (Cr 2 O 3 ) and / or
Alternatively, titanium oxide (TiO) is added in a range of 60 to 10% by weight.
【0016】ここで、導電付与剤の添加量を上述のよう
に限定する理由は、10重量%未満であると酸化クロム
(Cr2 O3 )及び/又は酸化チタン(TiO)を添加
したことによる効果が薄く、体積固有抵抗値を1011Ω
・cm未満とすることができないからであり、逆に60
重量%より多くなると機械的強度が大幅に低下するため
に構造部品材料として使用できないからである。Here, the reason why the amount of the conductivity-imparting agent is limited as described above is that if it is less than 10% by weight, chromium oxide (Cr 2 O 3 ) and / or titanium oxide (TiO) are added. Less effective, volume resistivity is 10 11 Ω
・ Because it cannot be less than cm,
If the content is more than 10% by weight, the mechanical strength is significantly reduced, so that it cannot be used as a structural component material.
【0017】次に、添加混合した原料を型内に充填して
所定形状に成形したあと、大気雰囲気中にて1200〜
1300℃の温度で1〜2時間程度の焼成を行うことに
より本発明の導電性セラミックスを得ることができる。Next, after the added and mixed raw materials are filled in a mold and formed into a predetermined shape, the raw materials are mixed in an air atmosphere at 1200 to 1200 m.
By sintering at a temperature of 1300 ° C. for about 1 to 2 hours, the conductive ceramic of the present invention can be obtained.
【0018】このように本発明の導電性セラミックス
は、大気雰囲気中での焼成が可能であり、必ずしもホッ
トプレスや熱間静水圧プレス(HIP)を行う必要がな
いことから製造工程が簡略であり、コストを低くするこ
とができる。なお、本発明において焼成雰囲気は大気雰
囲気に限らず、非酸化性雰囲気や還元性雰囲気であって
も構わない。As described above, the conductive ceramics of the present invention can be fired in the air atmosphere, and the manufacturing process is simplified since hot pressing or hot isostatic pressing (HIP) is not necessarily required. , The cost can be reduced. In the present invention, the firing atmosphere is not limited to the air atmosphere, but may be a non-oxidizing atmosphere or a reducing atmosphere.
【0019】[0019]
【実施例】以下、本発明の実施例を説明する。 (実施例1)出発原料をなす複合酸化物としてフォルス
テライト(Mg2 SiO4 )を、導電付与剤として酸化
クロム(Cr2 O3 )をそれぞれ用意し、表1に示すよ
うに添加量を変化させた。それぞれの原料は水又は有機
溶剤を溶媒とした容器の中に投入し、結合剤としてパラ
フィンワックスを投入し、約1時間混合してスラリーを
乾燥して2次原料を作製した。次に、得られた2次原料
を乾式プレス機にて1.0ton/cm2 の成形圧で所
定の形状に成形した後、大気雰囲気中にて1200〜1
300℃の温度で約1〜2時間焼成を行った。Embodiments of the present invention will be described below. Example 1 Forsterite (Mg 2 SiO 4 ) was prepared as a composite oxide as a starting material, and chromium oxide (Cr 2 O 3 ) was prepared as a conductivity-imparting agent, and the addition amount was changed as shown in Table 1. I let it. Each raw material was charged into a container using water or an organic solvent as a solvent, paraffin wax was charged as a binder, mixed for about 1 hour, and the slurry was dried to prepare a secondary raw material. Next, the obtained secondary raw material is formed into a predetermined shape by a dry press at a forming pressure of 1.0 ton / cm 2 , and then, in an air atmosphere, from 1200 to 1
The firing was performed at a temperature of 300 ° C. for about 1 to 2 hours.
【0020】そして、得られたセラミックスを直径60
mm×厚さ2mmの寸法に研削加工して体積固有抵抗値
を測定した後、3点曲げ試験により曲げ強度の測定を行
い、体積固有抵抗値が1011Ω・cm未満でかつ曲げ強
度10kg/mm2 以上を有するものを優れたものとし
た。Then, the obtained ceramics are made to have a diameter of 60.
After grinding to a size of 2 mm × 2 mm in thickness to measure the volume resistivity, the flexural strength was measured by a three-point bending test, and the volume resistivity was less than 10 11 Ω · cm and the flexural strength was 10 kg / Those having mm 2 or more were regarded as excellent.
【0021】結果は表2に示す通りである。The results are as shown in Table 2.
【0022】[0022]
【表1】 [Table 1]
【0023】[0023]
【表2】 [Table 2]
【0024】この結果、試料No.7では酸化クロム
(Cr2 O3 )の含有量が65重量%であるために体積
固有抵抗値を5×108 Ω・cmと導電性を得ることが
できたものの、その添加量が60重量%以上であるため
に、曲げ強度が3kg/mm2と構造部品材料として必
要な曲げ強度10kg/mm2 以上を満足することがで
きなかった。As a result, the sample No. In No. 7, since the content of chromium oxide (Cr 2 O 3 ) was 65% by weight, the volume resistivity was 5 × 10 8 Ω · cm, and the conductivity was obtained. However, the addition amount was 60% by weight. % Or more, the bending strength could not satisfy 3 kg / mm 2 and the bending strength required as a structural component material of 10 kg / mm 2 or more.
【0025】また、試料No.1では酸化クロム(Cr
2 O3 )の含有量が5重量%であるために曲げ強度は1
3kg/mm2 と構造部品材料として使用可能な強度を
有していたものの、その添加量が10重量%未満である
ために、酸化クロム(Cr2O3 )を添加したことによ
る効果が薄く、体積固有抵抗値を1011Ω・cm未満と
することができなかった。Sample No. Chromium oxide (Cr
Since the content of 2 O 3 ) is 5% by weight, the bending strength is 1%.
Although it had a strength of 3 kg / mm 2 and usable as a structural component material, the effect of adding chromium oxide (Cr 2 O 3 ) was thin because the addition amount was less than 10% by weight. The volume specific resistance could not be less than 10 11 Ω · cm.
【0026】これに対し、試料No.2〜6では酸化ク
ロム(Cr2 O3 )の含有量が10〜60重量%の範囲
にあるために、体積固有抵抗値を1011Ω・cm未満と
することができ、また、曲げ強度も10kg/mm2 以
上を満足することができた。On the other hand, the sample No. In Examples 2 to 6, since the content of chromium oxide (Cr 2 O 3 ) is in the range of 10 to 60% by weight, the volume resistivity can be less than 10 11 Ω · cm, and the bending strength can be reduced. 10 kg / mm 2 or more could be satisfied.
【0027】そこで、試料No.5の導電性セラミック
スをX線回折にかけ、結晶分析を行った。図1にそのチ
ャート図を示す。Then, the sample No. The conductive ceramic of No. 5 was subjected to X-ray diffraction and crystal analysis was performed. FIG. 1 shows the chart.
【0028】この結果、導電性セラミックス中には主体
をなす複合酸化物としてMg2 SiO4 の他にMgSi
O3 の存在を確認することができた。また、この他に導
電付与剤をなすCr2 O3 及びMgCr2 O4 の存在も
確認することができた。As a result, in the conductive ceramic, not only Mg 2 SiO 4 but also MgSi
The presence of O 3 could be confirmed. In addition, the presence of Cr 2 O 3 and MgCr 2 O 4 serving as conductivity imparting agents could be confirmed.
【0029】(実施例2)次に、出発原料をなす複合酸
化物としてフォルステライト(Mg2 SiO4 )を、導
電付与剤として酸化チタン(TiO)をそれぞれ用意
し、表3に示すように添加量を変化させて実施例1と同
様の方法により導電性セラミックスを作製した。Example 2 Next, forsterite (Mg 2 SiO 4 ) was prepared as a composite oxide as a starting material, and titanium oxide (TiO) was prepared as a conductivity-imparting agent, and added as shown in Table 3. A conductive ceramic was produced in the same manner as in Example 1 except that the amount was changed.
【0030】そして、得られたセラミックスを直径60
mm×厚さ2mmの寸法に研削加工して体積固有抵抗値
を測定した後、3点曲げ試験により曲げ強度の測定を行
い、体積固有抵抗値が1011Ω・cm未満でかつ曲げ強
度10kg/mm2 以上を有するものを優れたものとし
た。Then, the obtained ceramics were treated with a diameter of 60.
After grinding to a size of 2 mm × 2 mm in thickness to measure the volume resistivity, the flexural strength was measured by a three-point bending test, and the volume resistivity was less than 10 11 Ω · cm and the flexural strength was 10 kg / Those having mm 2 or more were regarded as excellent.
【0031】結果は表4に示す通りである。The results are as shown in Table 4.
【0032】[0032]
【表3】 [Table 3]
【0033】[0033]
【表4】 [Table 4]
【0034】この結果、試料No.14では酸化チタン
(TiO)の含有量が65重量%であるために体積固有
抵抗値を9×109 Ω・cmと導電性を得ることができ
たものの、その添加量が60重量%以上であるために、
曲げ強度が7kg/mm2 と構造部品材料として必要な
曲げ強度10kg/mm2 以上を満足することができな
かった。As a result, the sample No. In No. 14, since the titanium oxide (TiO) content was 65% by weight, the volume resistivity was 9 × 10 9 Ω · cm, and the conductivity was obtained. To be
The flexural strength of 7 kg / mm 2 and the flexural strength of 10 kg / mm 2 or more required as a structural component material could not be satisfied.
【0035】また、試料No.8では酸化チタン(Ti
O)の含有量が5重量%であるために曲げ強度は13k
g/mm2 と構造部品材料として使用可能な強度を有し
ていたものの、その添加量が10重量%未満であるため
に、酸化チタン(TiO)を添加したことによる効果が
薄く、体積固有抵抗値を1011Ω・cm未満とすること
ができなかった。The sample No. 8 shows titanium oxide (Ti
O) content is 5% by weight, flexural strength is 13k
g / mm 2, which is a strength that can be used as a structural component material, but since the amount added is less than 10% by weight, the effect of adding titanium oxide (TiO) is thin and the volume resistivity is low. The value could not be less than 10 11 Ω · cm.
【0036】これに対し、試料No.9〜13では酸化
チタン(TiO)の含有量が10〜60重量%の範囲に
あるために、体積固有抵抗値を1011Ω・cm未満とす
ることができ、また、曲げ強度も10kg/mm2 以上
を満足することができた。そこで、試料No.12の導
電性セラミックスをX線回折にかけ、結晶分析を行っ
た。図2にそのチャート図を示す。On the other hand, the sample No. In Nos. 9 to 13, the content of titanium oxide (TiO) is in the range of 10 to 60% by weight, so that the volume resistivity can be less than 10 11 Ω · cm and the bending strength is 10 kg / mm. 2 or more could be satisfied. Then, the sample No. Twelve conductive ceramics were subjected to X-ray diffraction for crystal analysis. FIG. 2 shows the chart.
【0037】この結果、導電性セラミックス中には主体
をなす複合酸化物としてMg2 SiO4 の他にMgSi
O3 の存在を確認することができた。また、この他に導
電付与剤をなすTiO及びMgTi2 O5 の存在も確認
することができた。As a result, in the conductive ceramics, not only Mg 2 SiO 4 but also MgSi
The presence of O 3 could be confirmed. In addition, the presence of TiO and MgTi 2 O 5 as conductivity imparting agents could be confirmed.
【0038】(実施例3)さらに、出発原料をなす複合
酸化物としてフォルステライト(Mg2 SiO4)を、
導電付与剤として酸化クロム(Cr2 O3 )及び酸化チ
タン(TiO)をそれぞれ用意し、表5に示すように添
加量を変化させて実施例1と同様の方法により導電性セ
ラミックスを作製した。Example 3 Further, forsterite (Mg 2 SiO 4 ) was used as a composite oxide as a starting material,
Chromium oxide (Cr 2 O 3 ) and titanium oxide (TiO) were each prepared as a conductivity-imparting agent, and the amount of addition was changed as shown in Table 5 to produce a conductive ceramic in the same manner as in Example 1.
【0039】そして、得られたセラミックスを直径60
mm×厚さ2mmの寸法に研削加工して体積固有抵抗値
を測定した後、3点曲げ試験により曲げ強度の測定を行
い、体積固有抵抗値が1010Ω・cm以上でかつ曲げ強
度10kg/mm2 以上を有するものを優れたものとし
た。Then, the obtained ceramics were made to have a diameter of 60.
After grinding to a size of 2 mm × 2 mm in thickness and measuring the volume resistivity, the flexural strength is measured by a three-point bending test, and the volume resistivity is 10 10 Ω · cm or more and the flexural strength is 10 kg / Those having mm 2 or more were regarded as excellent.
【0040】結果は表6に示す通りである。The results are as shown in Table 6.
【0041】[0041]
【表5】 [Table 5]
【0042】[0042]
【表6】 [Table 6]
【0043】この結果、導電付与剤として酸化クロム
(Cr2 O3 )及び酸化チタン(TiO)を添加しても
その添加量を10〜60重量%とすれば、体積固有抵抗
値が1011Ω・cm未満でかつ曲げ強度10kg/mm
2 以上の導電性セラミックスが得られることが判った。As a result, even when chromium oxide (Cr 2 O 3 ) and titanium oxide (TiO) are added as the conductivity-imparting agent, if the added amount is 10 to 60% by weight, the volume resistivity value is 10 11 Ω. · Less than cm and bending strength of 10 kg / mm
It was found that two or more conductive ceramics could be obtained.
【0044】このように実施例1〜3より10〜60重
量%の範囲で酸化クロム(Cr2 O3 )及び/又は酸化
チタン(TiO)を添加することにより、セラミックス
の機械的特性を維持した状態で、導電性を付与できるこ
とが判る。As described above, the mechanical properties of the ceramics were maintained by adding chromium oxide (Cr 2 O 3 ) and / or titanium oxide (TiO) in the range of 10 to 60% by weight as in Examples 1 to 3 . It turns out that conductivity can be provided in the state.
【0045】また、各実施例では酸化クロム(Cr2 O
3 )、酸化チタン(TiO)をそれぞれ単体で添加した
もの及び両者を添加した例を示したが、その他に導電付
与剤として酸化鉄(FeO、Fe2 O3 、Fe3 O4 )
を上記酸化クロム(Cr2 O3 )又は酸化チタン(Ti
O)の一部と置換した状態で添加しても体積固有抵抗値
を1011Ω・cm未満でかつ曲げ強度を10kg/mm
2 以上とすることができた。In each embodiment, chromium oxide (Cr 2 O) was used.
3 ), an example in which titanium oxide (TiO) is added alone and an example in which both are added are shown. In addition, iron oxide (FeO, Fe 2 O 3 , Fe 3 O 4 ) is used as a conductivity-imparting agent.
With the above chromium oxide (Cr 2 O 3 ) or titanium oxide (Ti
O), the volume resistivity is less than 10 11 Ω · cm and the bending strength is 10 kg / mm
2 or more.
【0046】[0046]
【発明の効果】以上のように、本発明によれば、MgO
とSiO2 の複合酸化物を主体とし、酸化クロム及び/
又は酸化チタンを含んでなり、その体積固有抵抗値が1
011Ω・cm未満でかつ曲げ強度が10kg/mm2 以
上の導電性セラミックスとしたことにより、構造部品材
料としての強度を維持した状態で導電性を得ることがで
き、セラミックヒーター、セラミックセンサー、半導体
・薄膜プロセスの抵抗評価用プローブ、磁気記録装置に
おけるテープガイド等の案内部材、磁気ディスク基板を
所定の間隔で保持するスペーサ、シム、クランプなどの
磁気ディスク基板用支持部材、VTR用ガイドローラ、
あるいは電着塗装用ノズルなどの構造部品材料として好
適に使用することができる。しかも、大気雰囲気中での
焼成が可能であるために製造工程を簡略化でき、生産性
を高めてコストを低くすることができる。As described above, according to the present invention, MgO
Chromium oxide and / or SiO 2
Or titanium oxide, whose volume resistivity is 1
By using conductive ceramics having a resistance of less than 0 11 Ω · cm and a bending strength of 10 kg / mm 2 or more, conductivity can be obtained while maintaining the strength as a structural component material. A probe for evaluating the resistance of a semiconductor / thin film process, a guide member such as a tape guide in a magnetic recording apparatus, a spacer for holding a magnetic disk substrate at a predetermined interval, a support member for a magnetic disk substrate such as a shim and a clamp, a guide roller for a VTR,
Alternatively, it can be suitably used as a structural component material such as an electrodeposition coating nozzle. In addition, since the firing can be performed in the air atmosphere, the manufacturing process can be simplified, the productivity can be increased, and the cost can be reduced.
【図1】本発明に係る導電性セラミックスのX線回折に
よるチャート図を示す図である。FIG. 1 is a view showing a chart of an X-ray diffraction of a conductive ceramic according to the present invention.
【図2】本発明に係る他の導電性セラミックスのX線回
折によるチャート図を示す図である。FIG. 2 is a chart showing a chart of another conductive ceramic according to the present invention by X-ray diffraction.
Claims (1)
し、酸化クロム及び/又は酸化チタンを含んでなり、そ
の体積固有抵抗値が1011Ω・cm未満でかつ曲げ強度
が10kg/mm2 以上であることを特徴とする導電性
セラミックス。1. A composite oxide comprising MgO and SiO 2 as a main component, comprising chromium oxide and / or titanium oxide, having a volume resistivity of less than 10 11 Ω · cm and a bending strength of 10 kg / mm 2. Conductive ceramics characterized by the above.
Priority Applications (1)
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JP23032496A JP3323076B2 (en) | 1996-08-30 | 1996-08-30 | Conductive ceramics |
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