JP3304338B2 - Heat treatment apparatus and heat treatment method - Google Patents
Heat treatment apparatus and heat treatment methodInfo
- Publication number
- JP3304338B2 JP3304338B2 JP2001289775A JP2001289775A JP3304338B2 JP 3304338 B2 JP3304338 B2 JP 3304338B2 JP 2001289775 A JP2001289775 A JP 2001289775A JP 2001289775 A JP2001289775 A JP 2001289775A JP 3304338 B2 JP3304338 B2 JP 3304338B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- reaction tube
- gas
- wafer
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 20
- 239000007789 gas Substances 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 10
- 238000000137 annealing Methods 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000003028 elevating effect Effects 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 238000002791 soaking Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体プロセスで非常に
多く使用されているＨ2ガスを用いた例えばアニール装
置等の熱処理装置及び熱処理方法に関する。The present invention relates to a heat treatment apparatus and a heat treatment method of example annealing apparatus or the like using the H 2 gas being used very much in the semiconductor process.
【０００２】[0002]
【従来の技術】第２図は従来の熱処理装置としてのアニ
ール装置の一例の構成を示す簡略断面図で、この従来の
アニール装置は、外気と内部を隔離しウェーハ１０を反
応処理する反応管３と、この反応管３内を加熱するヒー
タ１と、前記反応管３内の熱分布を均一にする均熱管２
と、ウェーハ１０を装填するボート８と、前記反応管３
内に反応ガスを当該反応管３内へ流す炉口部（ガス導入
・排気部）４と、ウェーハ１０が充填されたボート８を
反応管３内へロード，アンロードする昇降機構９とより
なり、前記炉口部４にはＨ2ガスのリークを防ぐため、
外気と隔離するベローズ１７を使用しており、このベロ
ーズ１７の上, 下部にはそれぞれ昇降機構９ａ，９ｂが
設けられている。2. Description of the Related Art FIG. 2 is a simplified cross-sectional view showing an example of the structure of an annealing apparatus as a conventional heat treatment apparatus. And a heater 1 for heating the inside of the reaction tube 3 and a soaking tube 2 for making the heat distribution in the reaction tube 3 uniform.
And a boat 8 for loading a wafer 10 and the reaction tube 3
The furnace comprises a furnace port (gas introduction / exhaust portion) 4 for flowing a reaction gas into the reaction tube 3 and a lifting mechanism 9 for loading and unloading a boat 8 filled with wafers 10 into the reaction tube 3. In order to prevent the H 2 gas from leaking into the furnace port 4,
A bellows 17 is used to isolate the air from the outside air. Elevating mechanisms 9a and 9b are provided above and below the bellows 17, respectively.
【０００３】即ち、ベローズ１７の下部にはウェーハ１
０が装填されたボート８を反応管３内へロード，アンロ
ードする昇降機構９ｂが設けられ、ベローズ１７の上部
にはウェーハ１０が装填されたボート８をベローズ１７
内から出し入れするためにベローズ１７を縮めたり、反
応管３とベローズ部分を密封するための昇降機構９ａが
設けられている。なお、１８は反応管３内の反応ガスを
排出するためのガス路である。That is, the wafer 1 is placed under the bellows 17.
An elevating mechanism 9b for loading and unloading the boat 8 loaded with the wafer 10 into the reaction tube 3 is provided.
An elevating mechanism 9a is provided for contracting the bellows 17 for taking it in and out, and for sealing the reaction tube 3 and the bellows portion. Reference numeral 18 denotes a gas passage for discharging the reaction gas in the reaction tube 3.
【０００４】第３図は一般的な減圧ＣＶＤ装置の構成の
一例を示す簡略断面図である。この従来の減圧ＣＶＤ装
置は、外気と内部を隔離しウェーハ１０を反応処理する
内側反応管２ｂ及び外側反応管２ａと、外側反応管２ａ
内を加熱するヒータ１と、ウェーハ１０を装填するボー
ト８と、前記外，内側反応管２ａ，２ｂ内を真空にし更
に反応ガスを当該反応管２ａ，２ｂ内へ流す炉口部４
と、この炉口部４の真空排気管５と、この真空排気管５
にバルブ１５を介挿して連結された真空ポンプ１６とよ
りなり、ウェーハ１０の処理中の圧力がアニール装置の
ように常圧ではなく真空状態つまり減圧下でウェーハ処
理を行うためシールフランジ面には反応管２ａ，２ｂ側
へ引張られる力が生じる。FIG. 3 is a simplified sectional view showing an example of the configuration of a general low-pressure CVD apparatus. This conventional low-pressure CVD apparatus includes an inner reaction tube 2b and an outer reaction tube 2a for isolating the inside from the outside air and performing a reaction process on the wafer 10, and an outer reaction tube 2a.
A heater 1 for heating the inside, a boat 8 for loading a wafer 10, a furnace port 4 for evacuating the inside of the outer and inner reaction tubes 2a and 2b, and flowing a reaction gas into the reaction tubes 2a and 2b.
And the vacuum exhaust pipe 5 of the furnace opening 4 and the vacuum exhaust pipe 5
And a vacuum pump 16 connected through a valve 15 so that the pressure during the processing of the wafer 10 is not normal pressure but a vacuum state, that is, the wafer is processed under reduced pressure, as in an annealing apparatus. A pulling force is generated toward the reaction tubes 2a and 2b.
【０００５】減圧状態を保つためのＯリング１１はシー
ル性を確保するためにある程度つぶして使用している
が、そのつぶす力はかなり大きな力を要する。減圧ＣＶ
Ｄ装置では前記真空による引張り力とバネ１２の力にて
Ｏリング１１をつぶしてシール性を確保している。The O-ring 11 for maintaining the reduced pressure state is used by crushing it to some extent in order to secure the sealing property, but the crushing force requires a considerably large force. Decompression CV
In the D device, the O-ring 11 is crushed by the tensile force of the vacuum and the force of the spring 12 to secure the sealing property.
【０００６】[0006]
【発明が解決しようとする課題】前者の従来のアニール
装置にあっては、2 つの昇降機構９ａ，９ｂとベローズ
１７が必要であるため、構造が複雑になり、高価になる
という課題がある。また後者の従来の減圧ＣＶＤ装置に
あっては、アニール装置のように、処理中の圧力が常圧
下にて行うものには、今までの減圧ＣＶＤ装置の構造を
採用してもシール性が十分得られないため、成膜の特性
上及びＨ2ガスが爆発性を有していることから安全性に
欠け、適さないという課題がある。そこで、本発明の目
的は構造を簡略化しコストダウンを図ると共にＨ2ガス
のリーク量を極力低減して安全性の向上を図ることであ
る。The former conventional annealing apparatus has a problem that the structure becomes complicated and expensive because two lifting mechanisms 9a and 9b and a bellows 17 are required. Also, in the latter conventional low pressure CVD apparatus, if the pressure during processing is normal pressure, such as an annealing apparatus, the sealing performance is sufficient even if the structure of the conventional low pressure CVD apparatus is adopted. because not obtained, the characteristics on and H 2 gas of the deposition is insecure because it has explosive, there is a problem that unsuitable. Therefore, an object of the present invention is to simplify the structure and reduce the cost, and to improve the safety by minimizing the leak amount of the H 2 gas.
【０００７】[0007]
【課題を解決するための手段】本発明は上記の課題を解
決し、上記の目的を達成するため、大気圧の水素雰囲気
でウェーハに熱処理を行う熱処理装置において、一旦反
応管内を真空引きした後、次に窒素ガスを大気圧に充満
させ、しかる後、水素ガスを流入させることを特徴とす
る熱処理装置及び熱処理方法である。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems and to achieve the above-mentioned object, the present invention provides a heat treatment apparatus for performing a heat treatment on a wafer in an atmosphere of hydrogen at atmospheric pressure. Then, a heat treatment apparatus and a heat treatment method are characterized in that a nitrogen gas is filled to the atmospheric pressure and then a hydrogen gas is caused to flow.
【０００８】[0008]
【実施例】以下図面により本発明の実施例を説明する。
第１図は本発明装置の一実施例の構成を示す簡略断面図
である。第１図中、３は外気と内部を隔離しウェーハ１
０を反応処理する反応管、１はこの反応管３内を加熱す
るヒータ、２は反応管３内の熱分布を均一にする均熱
管、８はウェーハ１０を装填するボート、４は反応管３
内を真空にし更に反応ガスを反応管３内へ流す炉口部
（反応ガスの流入管は図示していない）、９はウェーハ
１０が装填されたボート８を反応管３内へロード，アン
ロードする昇降機構である。Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a simplified sectional view showing the configuration of an embodiment of the apparatus of the present invention. In FIG. 1, reference numeral 3 denotes a wafer 1 for separating the outside air from the inside.
0 is a reaction tube for performing a reaction treatment, 1 is a heater for heating the inside of the reaction tube 3, 2 is a soaking tube for uniformizing heat distribution in the reaction tube 3, 8 is a boat for loading the wafer 10, 4 is a reaction tube 3
A furnace port (a reaction gas inflow tube is not shown) through which the inside is evacuated and a reaction gas flows into the reaction tube 3, and a boat 9 loaded with a wafer 10 is loaded and unloaded into the reaction tube 3. This is a lifting mechanism.
【０００９】本実施例はこのような構成のアニール装置
において、炉口部４を構成する反応管３のフランジとこ
れに対向するフランジとの間及びシールフランジ１３ａ
と反応管側に対向するフランジとの間にそれぞれ内,
外側の２重のＯリング１１，１１を挿設し、各２重のＯ
リング１１，１１間に、その空間部を真空排気する真空
ポンプ間を真空排気管７で連通すると共に、シールフラ
ンジ１３ａ と昇降機構９に取付けられたベースフラン
ジ１３ｂ との間にバネ１２を挿着してなる。５は反応
管３内を真空排気する真空排気管、６はこの真空排気管
５にバルブ１９を介して連結されＨ2ガスを安全に処理
するＨ2ガス処理部、１６は同じく真空排気管５にバル
ブ１５を介して連結された真空ポンプである。In the present embodiment, in the annealing apparatus having such a structure, the space between the flange of the reaction tube 3 constituting the furnace port 4 and the flange opposed thereto and the seal flange 13a are provided.
Inside and between the flange facing the reaction tube side,
The outer double O-rings 11 and 11 are inserted and each double O-ring 11 is inserted.
A vacuum pump 7 for evacuating the space between the rings 11 and 11 communicates with a vacuum exhaust pipe 7, and a spring 12 is inserted between a seal flange 13a and a base flange 13b attached to the elevating mechanism 9. Do it. Evacuation pipe 5 for evacuating the reaction tube 3, 6 H 2 gas processing unit for processing the H 2 gas is connected via a valve 19 to the vacuum exhaust pipe 5 safely, 16 likewise vacuum exhaust pipe 5 Is connected via a valve 15 to a vacuum pump.
【００１０】本実施例は上記のような構成であるから、
各２重のＯリング１１，１１間の空間部を真空ポンプ１
４により真空排気管７を通して真空排気することにより
各２重のＯリング１１，１１に、これを押しつぶす力
と、バネ１２による押しつぶす力が加わり、これら２重
のＯリング１１，１１がその合力により十分に押しつぶ
されることになり、ウェーハ１０の処理中の圧力 (反応
管３内の圧力）が大気圧でも十分なシール性が確保され
ることになる。In this embodiment, the configuration is as described above.
The space between the double O-rings 11 and 11 is
By evacuating the O-rings 11 and 11 through the evacuation pipe 7 by means of 4, a force for squeezing the O-rings 11 and 11 and a force for crushing by the spring 12 are applied to the O-rings 11 and 11 by the combined force. As a result, the wafer 10 is sufficiently squashed, and a sufficient sealing property is ensured even when the pressure during processing of the wafer 10 (the pressure in the reaction tube 3) is atmospheric pressure.
【００１１】次に本実施例の動作を順に説明する。 まず、ウェーハ１０をボート８に装填し、昇降機構
９により反応管３内へローディングする。 しかる後、真空ポンプ１４により各２重のＯリング
１１，１１間の空間部を真空排気管７を通して真空排気
し、十分なシール性を得る。 次に真空ポンプ１６により反応管３内を真空排気管
５及びバルブ１５を通して真空排気し、反応管３内の酸
素を排出し、その後バルブ１５を閉じて真空封じ込み、
反応管３内のリークチェックを行う。Next, the operation of this embodiment will be described in order. First, the wafer 10 is loaded on the boat 8 and loaded into the reaction tube 3 by the elevating mechanism 9. Thereafter, the space between the double O-rings 11 is evacuated by the vacuum pump 14 through the vacuum exhaust pipe 7 to obtain a sufficient sealing property. Next, the inside of the reaction tube 3 is evacuated by the vacuum pump 16 through the evacuation tube 5 and the valve 15, and oxygen in the reaction tube 3 is exhausted. Thereafter, the valve 15 is closed and sealed in vacuum.
A leak check in the reaction tube 3 is performed.
【００１２】 リークチェック終了後、Ｎ2ガスにし
て反応管３内を大気圧に戻し、リークチェックに異常が
ない場合にのみ図示しない反応ガス流入管よりＨ2ガス
を反応管３内へ流し、ウェーハ１０を処理する。Ｈ2ガ
スはバルブ１９を通してＨ2ガス処理部６に排出する。 ウェーハ１０の処理終了後、反応管３内にＮ2ガス
を流し、Ｈ2ガスを追い出す。 (Ｎ2ガスを流す前に反応
管３内を真空排気して反応管３内のＨ2ガスを完全に排
気する方法もある。) 追い出されたＨ2ガスは、真空排
気管５を通りバルブ１９を通ってＨ2ガス処理部６へ流
れ、爆発しないよう安全に処理される。 反応管３内がＮ2ガスにより置換された所で真空排
気管を通して各２室のＯリング１１，１１間の空間部を
大気圧に戻す。 昇降機構９によりウェーハ１０が装填されたボー
ト８は反応管３内よりアンロードされる。After the end of the leak check, the inside of the reaction tube 3 is returned to the atmospheric pressure with N 2 gas, and only when there is no abnormality in the leak check, the H 2 gas is flown into the reaction tube 3 from a reaction gas inflow tube (not shown). The wafer 10 is processed. The H 2 gas is discharged to the H 2 gas processing section 6 through a valve 19. After the processing of the wafer 10 is completed, N 2 gas is flown into the reaction tube 3 to expel H 2 gas. (There is also a method in which the inside of the reaction tube 3 is evacuated before flowing the N 2 gas to completely evacuate the H 2 gas in the reaction tube 3.) The expelled H 2 gas passes through the evacuating tube 5 and passes through the valve. It flows to the H 2 gas processing unit 6 through 19 and is safely processed so as not to explode. When the inside of the reaction tube 3 is replaced with N 2 gas, the space between the O-rings 11 in each of the two chambers is returned to the atmospheric pressure through a vacuum exhaust pipe. The boat 8 loaded with the wafers 10 by the elevating mechanism 9 is unloaded from the inside of the reaction tube 3.
【００１３】[0013]
【発明の効果】以上のように本発明によれば、大気圧の
水素雰囲気でウェーハに熱処理を行う熱処理装置におい
て、一旦反応管内を真空引きした後、次に窒素ガスを大
気圧に充満させ、しかる後、水素ガスを流入させること
を特徴とする熱処理装置及び熱処理方法としたので、構
造が簡略化されてコストダウンが図れると共に、シール
性が十分に得られ、安全性を向上することができる。As described above, according to the present invention, in a heat treatment apparatus for performing heat treatment on a wafer in a hydrogen atmosphere at atmospheric pressure, the inside of the reaction tube is once evacuated, and then nitrogen gas is filled to atmospheric pressure. Thereafter, since the heat treatment apparatus and the heat treatment method are characterized by flowing hydrogen gas, the structure can be simplified, cost can be reduced, sealing performance can be sufficiently obtained, and safety can be improved. .
【図１】第１図は、本発明装置の一実施例の構成を示す
簡略断面図である。FIG. 1 is a simplified sectional view showing the configuration of an embodiment of the apparatus of the present invention.
【図２】第２図は、従来のアニール装置の一例の構成を
示す簡略断面図である。FIG. 2 is a simplified sectional view showing a configuration of an example of a conventional annealing apparatus.
【図３】第３図は、一般的な減圧ＣＶＤ装置の構成の一
例を示す簡略断面図である。FIG. 3 is a simplified sectional view showing an example of the configuration of a general low-pressure CVD apparatus.
１ ヒータ ２ 均熱管 ３ 反応管 ４ 炉口部 ７ 真空排気管 ８ ボート ９ 昇降機構 １０ ウェーハ １１ リング状シール (Ｏリング） １２ 弾性体 (バネ) １３ａ シールフランジ １３ｂ ベースフランジ １４ 真空排気装置 (真空ポンプ) DESCRIPTION OF SYMBOLS 1 Heater 2 Heat equalizing tube 3 Reaction tube 4 Furnace opening 7 Vacuum exhaust pipe 8 Boat 9 Lifting mechanism 10 Wafer 11 Ring seal (O-ring) 12 Elastic body (Spring) 13a Seal flange 13b Base flange 14 Vacuum exhaust device (vacuum pump )
フロントページの続き (72)発明者 福田 重夫 東京都中野区東中野三丁目14番20号 株 式会社日立国際電気内 (72)発明者 狩野 利一 東京都中野区東中野三丁目14番20号 株 式会社日立国際電気内 (56)参考文献 特開 平３−151632（ＪＰ，Ａ) 特開 平３−194933（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/324 H01L 21/205 H01L 21/322 Continued on the front page (72) Inventor Shigeo Fukuda 3-14-20 Higashinakano, Nakano-ku, Tokyo Inside Hitachi Kokusai Electric Inc. (72) Inventor Toshikazu Kano 3-14-20 Higashinakano, Nakano-ku, Tokyo Stock Company (56) References JP-A-3-151632 (JP, A) JP-A-3-194933 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21 / 324 H01L 21/205 H01L 21/322
Claims (2)
を行う熱処理装置において、 一旦反応管内を真空引きした後、次に窒素ガスを大気圧
に充満させ、しかる後、水素ガスを流入させることを特
徴とする熱処理装置。In a heat treatment apparatus for performing a heat treatment on a wafer in a hydrogen atmosphere at atmospheric pressure, it is necessary to first evacuate the inside of a reaction tube, then to fill nitrogen gas to atmospheric pressure, and then to flow hydrogen gas. Characteristic heat treatment equipment.
を行う熱処理方法において、 一旦反応管内を真空引きした後、次に窒素ガスを大気圧
に充満させ、しかる後、水素ガスを流入させることを特
徴とする熱処理方法。2. A heat treatment method for performing a heat treatment on a wafer in a hydrogen atmosphere at atmospheric pressure, comprising: once evacuation of the inside of a reaction tube, then filling nitrogen gas to atmospheric pressure, and then flowing hydrogen gas. Characteristic heat treatment method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001289775A JP3304338B2 (en) | 2001-09-21 | 2001-09-21 | Heat treatment apparatus and heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001289775A JP3304338B2 (en) | 2001-09-21 | 2001-09-21 | Heat treatment apparatus and heat treatment method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33980990A Division JP3351521B2 (en) | 1990-11-30 | 1990-11-30 | Heat treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002158230A JP2002158230A (en) | 2002-05-31 |
| JP3304338B2 true JP3304338B2 (en) | 2002-07-22 |
Family
ID=19112221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001289775A Expired - Lifetime JP3304338B2 (en) | 2001-09-21 | 2001-09-21 | Heat treatment apparatus and heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3304338B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100628995B1 (en) | 2005-03-30 | 2006-09-27 | 이선영 | Hydrogen Gas Automatic Processing System for Semiconductor Wafer Processing |
-
2001
- 2001-09-21 JP JP2001289775A patent/JP3304338B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002158230A (en) | 2002-05-31 |
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