JP3285167B2 - Gradation mask - Google Patents
Gradation maskInfo
- Publication number
- JP3285167B2 JP3285167B2 JP19596393A JP19596393A JP3285167B2 JP 3285167 B2 JP3285167 B2 JP 3285167B2 JP 19596393 A JP19596393 A JP 19596393A JP 19596393 A JP19596393 A JP 19596393A JP 3285167 B2 JP3285167 B2 JP 3285167B2
- Authority
- JP
- Japan
- Prior art keywords
- transmittance
- gradation mask
- film
- region
- translucent film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002834 transmittance Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 150000001845 chromium compounds Chemical class 0.000 claims description 6
- 230000003252 repetitive effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- -1 CrO x N y C z Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、透過率が段階的に変化
する階調マスクに関し、特に、カラーフィルター製造に
用いられる階調マスクに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gradation mask whose transmittance changes stepwise, and more particularly to a gradation mask used for manufacturing a color filter.
【０００２】[0002]
【従来の技術】最近、カラー液晶表示装置等のカラーフ
ィルターの製造方法として、透過率が段階的に変化する
階調マスクを用いて露光回数を減らし、歩留りを向上さ
せる方法が提案されている（特開平５−１１１０６
号）。2. Description of the Related Art Recently, as a method of manufacturing a color filter for a color liquid crystal display device or the like, there has been proposed a method of reducing the number of exposures and improving the yield by using a gradation mask whose transmittance changes stepwise. JP-A-5-11106
issue).
【０００３】この方法の概略を図３の工程図を参照にし
て説明する。図３の方法は、予め基板上にフィルター着
色画素間の色の滲みを防止するブラックマトリックスを
設けておく例であるが、同図（ａ）に示したように、ガ
ラス基板１の表面にＩＴＯ等の透明導電膜２を設け、そ
の上にブラックマトリックス３をリソグラフィー技術等
を用いて形成し、その上にフォトレジスト膜４を形成す
る。次いで、同図（ｂ）に示すように、作製するカラー
フィルターの着色画素の寸法配置に対応して透過率が異
なる階調マスク５を、ブラックマトリックス３に整列さ
せて上記基板１に密着又は近接させ、階調マスク５側か
ら均一な露光光６を照射して、フォトレジスト膜４を露
光する。階調マスク５は、例えば、作製するカラーフィ
ルターの赤色の画素に対応する部分ａの透過率は０％で
あり、緑色の画素に対応する部分ｂの透過率は１０％で
あり、青色に対応する部分ｃの透過率は１００％のもの
である。このような階調マスク５を介して一様露光する
と、部分ａに対応するレジスト部分は何ら露光されず、
部分ｂに対応するレジスト部分は幾分露光され、部分ｃ
に対応するレジスト部分は充分に露光される。したがっ
て、フォトレジスト膜４には着色画素位置に応じて露光
量が異なることになる。このようなフォトレジスト膜４
を、同図（ｃ）に示すように、例えば露光量の最も少な
い部分のみを除去する濃度の現像液を用いて現像する
と、階調マスク５の部分ａに対応するレジスト部分のみ
が除去され、その部分の透明導電膜２が露出する。この
状態で、同図（ｄ）に示すように、透明導電膜２に電圧
を印加して電気泳動によりレジスト開口部分の透明導電
膜２露出部に赤色電着膜Ｒを成膜する。次いで、同図
（ｅ）に示すように、フォトレジスト膜４の中間の露光
量部分を除去する濃度の現像液を用いて、階調マスク５
の部分ｂに対応するレジスト部分のみを除去し、同図
（ｆ）に示すように、透明導電膜２に電圧を印加して電
気泳動によりレジスト開口部分で透明導電膜２露出部に
緑色電着膜Ｇを成膜する。同図（ｇ）、（ｈ）におい
て、同様にして、階調マスク５の部分ｃに対応する部分
のブラックマトリックス３がない部分に青色電着膜Ｂを
成膜することにより、同図（ｈ）に示したようなカラー
フィルターが完成する。なお、透過率の階調を４段階に
して、ブラックマトリックス３も同様に製造することも
可能である。The outline of this method will be described with reference to the process chart of FIG. The method shown in FIG. 3 is an example in which a black matrix for preventing color bleeding between filter-colored pixels is provided on the substrate in advance, and as shown in FIG. And the like, a black matrix 3 is formed thereon using a lithography technique or the like, and a photoresist film 4 is formed thereon. Next, as shown in FIG. 3B, a gradation mask 5 having a different transmittance corresponding to the dimensional arrangement of the colored pixels of the color filter to be manufactured is aligned with the black matrix 3 and is in close contact with or close to the substrate 1. Then, the photoresist film 4 is exposed by irradiating uniform exposure light 6 from the gradation mask 5 side. In the gradation mask 5, for example, the transmittance of a portion a corresponding to a red pixel of the color filter to be manufactured is 0%, the transmittance of a portion b corresponding to a green pixel is 10%, and the The transmittance of the portion c is 100%. When uniform exposure is performed through such a gradation mask 5, the resist portion corresponding to the portion a is not exposed at all,
The resist part corresponding to part b is somewhat exposed and part c
Are sufficiently exposed. Therefore, the exposure amount of the photoresist film 4 differs depending on the position of the colored pixel. Such a photoresist film 4
Is developed using, for example, a developing solution having a concentration that removes only the portion having the smallest exposure amount, as shown in FIG. 4C, only the resist portion corresponding to the portion a of the gradation mask 5 is removed. The portion of the transparent conductive film 2 is exposed. In this state, as shown in FIG. 4D, a voltage is applied to the transparent conductive film 2, and a red electrodeposition film R is formed on the exposed portion of the transparent conductive film 2 at the resist opening by electrophoresis. Next, as shown in FIG. 3E, a gradation mask 5 is formed by using a developing solution having a concentration for removing an intermediate exposure amount portion of the photoresist film 4.
Only the resist portion corresponding to the portion b is removed, and a voltage is applied to the transparent conductive film 2 as shown in FIG. A film G is formed. 2G and 2H, similarly, a blue electrodeposition film B is formed on a portion corresponding to the portion c of the gradation mask 5 where the black matrix 3 is not provided. The color filter as shown in ()) is completed. It should be noted that the black matrix 3 can be manufactured in the same manner with four gradations of transmittance.
【０００４】従来、このような段階的な中間の透過率を
有する階調マスクを作製するには、例えば真空蒸着法が
用いられるが、上記のようなカラーフィルター作製用の
階調マスクは各領域が５０μｍ程度以下の寸法を有する
場合もあるので、このような微細で正確な形状寸法を有
するものを効率よく、安価に作製することは容易ではな
かった。Conventionally, to produce a gradation mask having such a stepwise intermediate transmittance, for example, a vacuum deposition method has been used. May have a size of about 50 μm or less, and it has not been easy to efficiently and inexpensively produce a product having such a fine and accurate shape and size.
【０００５】また、従来の透過率の低いクロム膜では、
元々膜厚が薄いため、エッチングによるグレートーンの
透過率制御（クロム膜厚制御）が難しかった。In a conventional chromium film having a low transmittance,
Since the film thickness was originally thin, it was difficult to control the transmittance of the gray tone by etching (controlling the chrome film thickness).
【０００６】[0006]
【発明が解決しようとする課題】本発明はこのような従
来技術の問題点に鑑みてなされたものであり、その目的
は、正確に、効率的に、かつ、安価に製造することがで
きる透過率が段階的に変化する階調マスクを提供するこ
とである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has as its object the purpose of the present invention is to provide an accurate, efficient, and inexpensive transmission method. The object is to provide a gradation mask whose rate changes stepwise.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成する本発
明の階調マスクは、透過率が実質的に０％と１００％を
含む３段階以上に空間的に段階的に変化する階調マスク
において、少なくとも透過率が実質的に０％の領域が、
０％と１００％以外の所定の透過率を有し、位相差が実
質的に使用波長の半波長又はその奇数倍になる半透明膜
を透明基板上に微細な繰り返しパターン状に設けてなる
ものであり、透過率が０％と１００％以外の１つの中間
の値の領域が、前記半透明膜を透明基板上全面に設けて
なるものであることを特徴とするものである。According to the present invention, there is provided a gradation mask in which the transmittance spatially changes in three or more steps including substantially 0% and 100%. In at least the region where the transmittance is substantially 0%,
A translucent film having a predetermined transmittance other than 0% and 100% and having a phase difference of substantially a half wavelength of an operating wavelength or an odd multiple thereof is provided on a transparent substrate in a fine repetitive pattern. And a region having an intermediate value other than 0% and 100% in transmittance is provided by providing the translucent film on the entire surface of the transparent substrate.
【０００８】この場合、微細な繰り返しパターンの繰り
返しピッチが２μｍ以下であることが望ましい。In this case, it is desirable that the repetition pitch of the fine repetition pattern is 2 μm or less.
【０００９】[0009]
【００１０】また、半透明膜をクロム化合物から構成す
ることができる。[0010] The translucent film can be made of a chromium compound.
【００１１】なお、この階調マスクは、複数の着色画素
からなるカラーフィルター製造用に用いるのに適してい
る。Note that this gradation mask is suitable for use in manufacturing a color filter composed of a plurality of colored pixels.
【００１２】[0012]
【作用】本発明においては、少なくとも透過率が実質的
に０％の領域が、０％と１００％以外の所定の透過率を
有し、位相差が実質的に使用波長の半波長又はその奇数
倍になる半透明膜を透明基板上に微細な繰り返しパター
ン状に設けてなるものであり、透過率が０％と１００％
以外の１つの中間の値の領域が、前記半透明膜を透明基
板上全面に設けてなるものであるので、各透過率領域が
微細であっても、この半透明膜を成膜し、リソグラフィ
ー技術等を利用してこの膜をパターニングするだけで、
正確に、効率的に、かつ、安価に製造することができ、
特に、複数の着色画素からなるカラーフィルター製造用
に適したものとなる。In the present invention, at least the region where the transmittance is substantially 0% has a predetermined transmittance other than 0% and 100%, and the phase difference is substantially a half wavelength of the operating wavelength or an odd number thereof. A translucent film that is doubled is provided in a fine repetitive pattern on a transparent substrate, and the transmittance is 0% or 100%.
One intermediate value region other than the above is one in which the translucent film is provided on the entire surface of the transparent substrate, so that even if each transmittance region is fine, this translucent film is formed and lithography is performed. Just pattern this film using technology, etc.
It can be manufactured accurately, efficiently and inexpensively,
In particular, it is suitable for manufacturing a color filter including a plurality of colored pixels.
【００１３】[0013]
【実施例】以下、本発明の階調マスクを実施例に基づい
て説明する。本発明の階調マスクの基本原理は、半透明
で、しかもその膜が光の位相をシフトさせる作用を有す
る膜を用いて、透過率が実質的に０％の部分と中間の透
過率の部分を形成することにより、空間的に透過率が段
階的に変化する階調マスクを構成することにある。この
ような、半透明で光の位相シフト作用を有する膜の材料
としては、例えば、ＣｒＯx 、ＣｒＮx 、ＣｒＯ
x Ｎy 、ＣｒＯx Ｎy Ｃz 等のクロム化合物を用いるこ
とができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A gradation mask according to the present invention will be described below with reference to embodiments. The basic principle of the gradation mask of the present invention is that a film having a translucency of substantially 0% and a medium transmittance is used by using a film that is translucent and has a function of shifting the phase of light. Is formed to form a gradation mask whose transmittance changes stepwise spatially. As a material of such a translucent film having a light phase shift function, for example, CrO x , CrN x , CrO
x N y, may be used a chromium compound such as CrO x N y C z.
【００１４】図１は、本発明に基づく階調マスクの１実
施例の断面図（ａ）と平面図（ｂ）であり、透明基板１
１上の領域ｂ上には全面に半透明膜１２が設けられ、領
域ｃ上にはこのような半透明膜１２は配置されていな
い。そして、領域ａ上には、例えば市松模様状に半透明
膜１２が設けられており、その繰り返しピッチをｐとす
る。FIG. 1 is a sectional view (a) and a plan view (b) of an embodiment of a gradation mask according to the present invention.
The semi-transparent film 12 is provided on the entire surface of the region b on the first surface, and such a semi-transparent film 12 is not arranged on the region c. On the region a, a translucent film 12 is provided, for example, in a checkered pattern, and the repetition pitch is p.
【００１５】半透明膜１２は、厚さｄで使用波長λでの
屈折率ｎの半透明材料からなり、その膜厚ｄと屈折率ｎ
は、Ｎを１又は奇数として、下記の式（１）を満足する
ように設けられている。The translucent film 12 is made of a translucent material having a thickness d and a refractive index n at a used wavelength λ.
Is provided so as to satisfy the following expression (1), where N is 1 or an odd number.
【００１６】 （π−π／３）×Ｎ≦２π・ｄ（ｎ−１）／λ≦（π＋π／３）×Ｎ ・・・（１） すなわち、半透明膜１２を設けた部分と設けない部分の
位相差がほぼ半波長又はその奇数倍になるようになって
いる。(Π−π / 3) × N ≦ 2π · d (n−1) / λ ≦ (π + π / 3) × N (1) That is, the portion where the translucent film 12 is provided is not provided. The phase difference of the portion is set to be substantially a half wavelength or an odd multiple thereof.
【００１７】また、半透明膜１２の透過率は、その厚さ
ｄにおいて、０％と１００％の間の中間の値、例えば１
０％に設定されている。The transmissivity of the translucent film 12 has an intermediate value between 0% and 100%, for example, 1 at the thickness d.
It is set to 0%.
【００１８】このように、半透明膜１２は位相差がほぼ
１８０°又はその奇数倍になっており、しかも、透過率
が所定の値になっている。この両者を同時に所定の値に
するには、例えばＣｒＯx 、ＣｒＮx 、ＣｒＯx Ｎy 、
ＣｒＯx Ｎy Ｃz 等のクロム化合物の場合、膜１２を構
成する材料の組成、組織、構造を変えることにより可能
となる。As described above, the translucent film 12 has a phase difference of approximately 180 ° or an odd multiple thereof, and has a predetermined transmittance. In order to make these two values at the same time, for example, CrO x , CrN x , CrO x N y ,
In the case of a chromium compound such as CrO x N y C z , it becomes possible by changing the composition, structure and structure of the material constituting the film 12.
【００１９】さらに、領域ａにおける半透明膜１２を設
ける繰り返しピッチｐは２μｍ以下に設定されている。Further, the repetition pitch p at which the translucent film 12 is provided in the region a is set to 2 μm or less.
【００２０】本発明の階調マスクは以上のような構成で
あるので、領域ｂは全面に半透明膜１２が設けられてい
るので、透過率は０％と１００％の間の中間の値、例え
ば１０％であり、領域ｃは半透明膜１２は配置されてい
ないので、透過率はほぼ１００％である。これに対し
て、領域ａは２μｍ以下の繰り返しピッチｐで市松模様
状に半透明膜１２が設けられているので、透過率はほぼ
０％になる。Since the gradation mask of the present invention has the above-mentioned structure, the transmissivity is an intermediate value between 0% and 100% since the translucent film 12 is provided on the entire surface of the region b. For example, the transmittance is about 100% because the translucent film 12 is not disposed in the area c. On the other hand, in the region a, the translucent film 12 is provided in a checkered pattern at a repetition pitch p of 2 μm or less, so that the transmittance becomes almost 0%.
【００２１】この領域ａにおいて、透過率がほぼ０％に
なるのは、半透明膜１２が配置された位置を通過した光
と、半透明膜１２の配置がない位置を通過した光との位
相差がほぼ１８０°又はその奇数倍になるので、両領域
を通過し、エッジで回折された光が投影面又は像面で実
質的に重なり合い、干渉により相互に打ち消し合うため
である。この繰り返しピッチｐがほぼ２μｍ以下であれ
ば、上記のような現象が起きる。In this area a, the transmittance becomes almost 0% because of the light passing through the position where the translucent film 12 is disposed and the light passing through the position where the translucent film 12 is not disposed. Because the phase difference is approximately 180 ° or an odd multiple thereof, the light passing through both regions and diffracted at the edges substantially overlaps on the projection plane or image plane, and cancels each other out by interference. If the repetition pitch p is approximately 2 μm or less, the above phenomenon occurs.
【００２２】領域ａの半透明膜１２の配置形態として
は、図１（ｂ）に示したような市松模様状である必要は
なく、図２（ａ）、（ｂ）に例示したような繰り返し模
様状に配置してもよい。The arrangement of the translucent film 12 in the region a does not need to be in a checkered pattern as shown in FIG. 1B, but may be repeated as shown in FIGS. 2A and 2B. They may be arranged in a pattern.
【００２３】また、以上においては、半透明膜１２を繰
り返し周期ｐで周期的に配置することにより、透過率が
ほぼ０％の領域ａを構成できることを説明したが、半透
明膜１２を配置する部分と配置しない部分の面積比を変
えることにより、位相差１８０°で干渉し合う光の振幅
比を１以外の値にし、０％と１００％の間の中間の例え
ば８０％の透過率の領域を構成することもできる。した
がって、透過率が実質的に０％と１００％を含む４段階
以上のものも構成することができる。In the above description, the translucent film 12 is periodically arranged at the repetition period p to form the region a having a transmittance of almost 0%. However, the translucent film 12 is arranged. By changing the area ratio between the portion and the non-arranged portion, the amplitude ratio of light that interferes with a phase difference of 180 ° is set to a value other than 1, and a region having a transmittance between 0% and 100%, for example, 80%. Can also be configured. Therefore, it is also possible to configure a structure having four or more stages including substantially 0% and 100% transmittance.
【００２４】このような階調マスクを作製するには、リ
ソグラフィーの技術を利用することができる。その一例
を説明すると、膜厚ｄが前記式（１）を満足し、透過率
が所定の値になる材料、例えばＣｒＯx 、ＣｒＮx 、Ｃ
ｒＯx Ｎy 、ＣｒＯx Ｎy Ｃz 等のクロム化合物を選
び、その膜をその膜厚ｄで透明基板１１上に成膜し、そ
の上に電子線レジスト又はフォトレジストを成膜し、こ
のレジスト膜上の透過率を１００％にする領域ｃ及び透
過率を０％にする領域ａに、電子線、レーザー光又はそ
の他の光による所定パターンの露光を行い、レジスト膜
を現像して露光部分を溶解し、そのレジストパターンを
マスクとして露出したクロム化合物の膜部分をドライエ
ッチング又はウエットエッチングにより除去し、残った
レジストを剥離することにより、図１に示したような階
調マスクを作製することができる。In order to manufacture such a gradation mask, a lithography technique can be used. An example will be described. A material whose film thickness d satisfies the expression (1) and whose transmittance is a predetermined value, for example, CrO x , CrN x , C
A chromium compound such as rO x N y or CrO x N y C z is selected, the film is formed on the transparent substrate 11 with the film thickness d, and an electron beam resist or a photoresist is formed thereon. Exposure of a predetermined pattern with an electron beam, a laser beam or other light is performed on a region c on the resist film where the transmittance is 100% and a region a on which the transmittance is 0%, and the resist film is developed and exposed Is dissolved, the exposed chromium compound film portion is removed by dry etching or wet etching using the resist pattern as a mask, and the remaining resist is peeled off to produce a gradation mask as shown in FIG. Can be.
【００２５】このようなリソグラフィー技術を利用した
製造方法によれば、階調マスクの各透過率領域をリソグ
ラフィーの技術によりパターニング及びエッチングして
作製するので、液晶表示装置用のカラーフィルターの着
色画素に対応して各領域の寸法が極めて微細であって
も、図３に示したようなカラーフィルター製造に用いる
階調マスクを正確に、効率的に、かつ、安価に製造する
ことができる。According to the manufacturing method utilizing such a lithography technique, since each transmittance region of the gradation mask is formed by patterning and etching by the lithography technique, it is formed on a color pixel of a color filter for a liquid crystal display device. Correspondingly, even if the size of each region is extremely fine, it is possible to accurately, efficiently, and inexpensively produce a gradation mask used for producing a color filter as shown in FIG.
【００２６】以上、本発明の階調マスクを実施例に基づ
いて説明してきたが、本発明はこれら実施例に限定され
ず、種々の変形が可能である。また、本発明による階調
マスクは、図３のカラーフィルターの製造用のみなら
ず、他の用途に用いることもできる。Although the gradation mask of the present invention has been described based on the embodiments, the present invention is not limited to these embodiments, and various modifications can be made. Further, the gradation mask according to the present invention can be used not only for manufacturing the color filter of FIG. 3 but also for other uses.
【００２７】[0027]
【発明の効果】以上の説明から明らかなように、本発明
の階調によると、少なくとも透過率が実質的に０％の領
域が、０％と１００％以外の所定の透過率を有し、位相
差が実質的に使用波長の半波長又はその奇数倍になる半
透明膜を透明基板上に微細な繰り返しパターン状に設け
てなるものであり、透過率が０％と１００％以外の１つ
の中間の値の領域が、前記半透明膜を透明基板上全面に
設けてなるものであるので、各透過率領域が微細であっ
ても、この半透明膜を成膜し、リソグラフィー技術等を
利用してこの膜をパターニングするだけで、正確に、効
率的に、かつ、安価に製造することができ、特に、複数
の着色画素からなるカラーフィルター製造用に適したも
のとなる。As is apparent from the above description, according to the gradation of the present invention, at least a region where the transmittance is substantially 0% has a predetermined transmittance other than 0% and 100%, A translucent film having a phase difference substantially equal to a half wavelength of the use wavelength or an odd multiple thereof is provided in a fine repetitive pattern on a transparent substrate, and one of transmittances other than 0% and 100%. Since the region of the intermediate value is formed by providing the translucent film on the entire surface of the transparent substrate, even if each transmittance region is fine, this translucent film is formed and lithography technology or the like is used. By simply patterning this film, it can be manufactured accurately, efficiently and at low cost, and is particularly suitable for manufacturing a color filter composed of a plurality of colored pixels.
【図１】本発明に基づく階調マスクの１実施例の断面図
（ａ）と平面図（ｂ）である。FIGS. 1A and 1B are a sectional view and a plan view of an embodiment of a gradation mask according to the present invention. FIGS.
【図２】透過率０％領域の半透明膜の配置形態の別の例
を示す図である。FIG. 2 is a view showing another example of an arrangement of a translucent film having a transmittance of 0%.
【図３】階調マスクを用いたカラーフィルター製造方法
の概略の工程を示す図である。FIG. 3 is a diagram showing schematic steps of a color filter manufacturing method using a gradation mask.
１１…透明基板 １２…半透明膜 11: transparent substrate 12: translucent film
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) G02B 5/20 101 G03F 1/08 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G02B 5/20 101 G03F 1/08
Claims (4)
３段階以上に空間的に段階的に変化する階調マスクにお
いて、少なくとも透過率が実質的に０％の領域が、０％
と１００％以外の所定の透過率を有し、位相差が実質的
に使用波長の半波長又はその奇数倍になる半透明膜を透
明基板上に微細な繰り返しパターン状に設けてなるもの
であり、透過率が０％と１００％以外の１つの中間の値
の領域が、前記半透明膜を透明基板上全面に設けてなる
ものであることを特徴とする階調マスク。1. In a gradation mask in which the transmittance spatially changes in three or more steps including substantially 0% and 100%, at least a region where the transmittance is substantially 0% is 0%.
And a translucent film having a predetermined transmittance other than 100% and a phase difference of substantially a half wavelength of the working wavelength or an odd multiple thereof is provided on a transparent substrate in a fine repetitive pattern. One intermediate value other than 0% and 100%
Is formed by providing the translucent film on the entire surface of the transparent substrate
Monodea tone mask, wherein Rukoto.
ピッチが２μｍ以下であることを特徴とする請求項１記
載の階調マスク。2. The gradation mask according to claim 1, wherein a repetition pitch of the fine repetition pattern is 2 μm or less.
とを特徴とする請求項１又は２記載の階調マスク。Wherein the claim 1 or 2 gradation mask according semitransparent film characterized by comprising the chromium compound.
ー製造用に用いられることを特徴とする１から３の何れ
か１項記載の階調マスク。4. The gradation mask according to claim 1, which is used for manufacturing a color filter including a plurality of colored pixels.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19596393A JP3285167B2 (en) | 1993-08-06 | 1993-08-06 | Gradation mask |
| KR1019940019327A KR0186067B1 (en) | 1993-08-06 | 1994-08-05 | Gradation mask and its manufacture |
| US08/675,372 US5725975A (en) | 1993-08-06 | 1996-07-02 | Gradation mask and process for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19596393A JP3285167B2 (en) | 1993-08-06 | 1993-08-06 | Gradation mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0749411A JPH0749411A (en) | 1995-02-21 |
| JP3285167B2 true JP3285167B2 (en) | 2002-05-27 |
Family
ID=16349903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19596393A Expired - Lifetime JP3285167B2 (en) | 1993-08-06 | 1993-08-06 | Gradation mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3285167B2 (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542648B2 (en) * | 1999-09-29 | 2010-09-15 | コニカミノルタセンシング株式会社 | Photometric device |
| WO2005008333A2 (en) * | 2003-07-18 | 2005-01-27 | Uclt Ltd. | Method for correcting critical dimension variations in photomasks |
| JP5200439B2 (en) * | 2006-07-21 | 2013-06-05 | 大日本印刷株式会社 | Manufacturing method of color filter |
| JP5673718B2 (en) * | 2006-07-21 | 2015-02-18 | 大日本印刷株式会社 | Gradation mask |
| JP5228390B2 (en) * | 2006-07-21 | 2013-07-03 | 大日本印刷株式会社 | Gradation mask |
| JP5037052B2 (en) * | 2006-07-27 | 2012-09-26 | 株式会社クラレ | Printing method, and color filter and gradation mask manufacturing method using the same |
| JP2008032941A (en) * | 2006-07-27 | 2008-02-14 | Kuraray Co Ltd | Gradation mask and manufacturing method thereof |
| KR20080110148A (en) * | 2007-06-14 | 2008-12-18 | 주식회사 엘지화학 | Photomask for liquid crystal display device and manufacturing method of color filter using same |
| TWI422961B (en) * | 2007-07-19 | 2014-01-11 | Hoya Corp | Photomask and method of manufacturing the same, method of transferring a pattern, and method of manufacturing a display device |
| JP2009237419A (en) * | 2008-03-28 | 2009-10-15 | Hoya Corp | Multi-gradation photomask, manufacturing method thereof, and pattern transfer method |
| JP2010175697A (en) * | 2009-01-28 | 2010-08-12 | Toppan Printing Co Ltd | Concentration distribution mask |
| JP6370755B2 (en) | 2015-09-11 | 2018-08-08 | 東芝メモリ株式会社 | Mask and pattern forming method |
-
1993
- 1993-08-06 JP JP19596393A patent/JP3285167B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0749411A (en) | 1995-02-21 |
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