JP3266567B2 - Vacuum processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to dry etching, CVD, and the like for substrates to be processed such as semiconductor wafers and liquid crystal display substrates.
The present invention relates to a vacuum processing apparatus for performing sputtering and other surface treatments.

[0002]

2. Description of the Related Art As the above-mentioned vacuum processing apparatus, a vacuum processing apparatus having a configuration as shown in FIG. 1 is known. In FIG. 1, a susceptor 3 for holding a substrate 2 to be processed is provided in a vacuum processing vessel 1 having a reaction gas supply port 4 and a vacuum pump 5, and a high frequency power supply 6 is connected to the susceptor 3. Vacuum processing container 1
Has an inert gas inlet 7, an inert gas supply path 13, and an inert gas exhaust means 8, and has an elevating mechanism 9, an elevating pin 10, and an elevating pin 1 for transporting the substrate 2 to be processed.
0 is provided. As shown in detail in FIG. 5, the guide bush 11 has a guide hole formed at the center and a plurality of cutout grooves 11d having an arcuate cross section along the axial direction at the outer periphery.

The operation of the vacuum processing apparatus having the above configuration will be described. The vacuum processing vessel 1 is evacuated by a vacuum pump 5 and a reaction gas for generating plasma from a reaction gas supply port 4 is introduced into the vacuum vessel 1. Introduced and held at a suitable pressure. Next, an inert gas serving as a heat transfer medium for adjusting the temperature of the substrate 2 to a processing temperature is introduced from the inert gas supply port 7. An inert gas as a heat transfer medium passes through an inert gas supply path 13 and is introduced into a gap 12 between the substrate 2 to be processed and the susceptor 3, and a hole for the elevating pin 10 provided on the susceptor 3 and a guide bush 11 are provided. The gas is exhausted by the inert gas exhausting means 8 while being maintained at an appropriate pressure through the notch groove 11d provided in the nozzle. Next, by applying high frequency power from the high frequency power supply 6 to the susceptor 3, plasma is excited in the vacuum processing vessel 1. It is possible to perform a surface treatment on the substrate to be processed 2 by the excited plasma.

[0004]

However, since the guide bush 11 has a shape as shown in FIG. 5 in the above-mentioned conventional configuration, when the high frequency power applied to the susceptor 3 is set to a high output, an inert gas supply path is provided. The glow discharge due to the inert gas is easily generated in the hole 13 for the elevating pin 10 provided on the susceptor 3, the gap 12, and the guide bush 11, and the substrate 2 is charged up by the glow discharge. There was a problem of causing damage.

[0005] In view of the above-mentioned conventional problems, the present invention prevents a glow discharge due to an inert gas generated between a susceptor and a vacuum processing vessel, and enables a vacuum to stably perform surface treatment of a substrate to be processed. It is intended to provide a processing device.

[0006]

According to the present invention, there is provided a vacuum processing apparatus comprising: a vacuum processing vessel for accommodating a substrate to be processed; a reaction gas supply means for supplying the vacuum processing vessel; a vacuum exhaust means for the vacuum processing vessel; A susceptor for holding a substrate, a power supply device for applying high-frequency power for generating plasma in a vacuum processing vessel, and an elevating pin for transporting the substrate to be processed,
A guide bush that guides the elevating pins, an inert gas supply path that supplies an inert gas serving as a heat transfer medium to a gap between the target substrate and the susceptor in order to adjust the temperature of the target substrate to a processing temperature, In a vacuum processing apparatus having an inert gas exhaust means for exhausting while controlling the pressure of the inert gas, a bush made of porous ceramic is arranged between a susceptor and a vacuum processing vessel in an inert gas supply path, and a guide is provided. The bush has an inner / outer double structure made of an insulator bush for supporting the elevating pin on the inner peripheral side and a porous ceramic on the outer peripheral side, or the guide bush is made of an insulator and has a hole in the center for supporting the elevating pin. In addition, an inert gas flow path consisting of a spiral groove is formed on the outer periphery.

In such a configuration, when processing a substrate to be processed, an inert gas is caused to flow through a gap between the substrate to be processed and the susceptor to adjust the temperature of the substrate to be processed to a processing temperature. The inert gas is introduced into the gap between the susceptor and the substrate to be processed through the inert gas supply path, and is held at an appropriate pressure outside the vacuum processing vessel through the guide bush through the elevating pin hole provided in the susceptor. Exhausted. Glow discharge of the inert gas can be prevented by providing a conductance by making the flow path distance between the inert gas susceptor and the vacuum processing vessel longer by using a porous ceramic or a spiral groove. By preventing abnormal discharge in this way, damage to the substrate to be processed can be prevented.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a vacuum processing apparatus according to the present invention will be described below with reference to FIGS.

The overall structure of the vacuum processing apparatus is the same as that of the conventional example described with reference to FIG. 1, and a substrate 2 to be processed is held in a vacuum processing vessel 1 having a reaction gas supply port 4 and a vacuum pump 5. A susceptor 3 is provided, and a high frequency power supply 6 is connected to the susceptor 3. The vacuum processing vessel 1 is provided with an inert gas inlet 7 and an inert gas exhaust unit 8, and the susceptor 3 and the substrate 2 to be processed are passed through the inert gas inlet 7.
An inert gas supply path 13 is formed toward the gap 12 on the back surface. An elevating mechanism 9 for transporting the substrate 2 to be processed is provided, and an elevating pin 10 driven up and down by the elevating mechanism 9 is passed through the susceptor 3 and a guide bush 11 for supporting the elevating pin 10 is provided. It is arranged.

As shown in detail in FIG. 2, the guide bush 11 serves as an insulator bush 11a having a hole for supporting the elevating pin 10 on the inner peripheral side so as to be able to move up and down and a flow path for inert gas on the outer peripheral side. It has a double structure with the porous ceramic 11b.

A bush 14 made of a porous ceramic is disposed between the susceptor 3 and the vacuum processing vessel 1 in the inert gas supply path 13 as shown in FIG.

The operation of the vacuum processing apparatus having the above configuration will be described. The vacuum processing vessel 1 is evacuated by the vacuum pump 5 and the reaction gas for generating plasma from the reaction gas supply port 4 is supplied into the vacuum processing vessel 1. And maintained at an appropriate pressure. Next, an inert gas serving as a heat transfer medium for adjusting the temperature of the substrate 2 to a processing temperature is introduced from the inert gas supply port 7. The inert gas, which is a heat transfer medium, passes through a bush 14 made of porous ceramic disposed in an inert gas supply path 13, from the center of the susceptor 3 to the gap 12 between the back surface of the substrate 2 to be processed and the susceptor 3. The gas is exhausted by the inert gas exhaust means 8 while being maintained at an appropriate pressure through a hole for the elevating pin 10 provided in the susceptor 3 and the porous ceramic 11b of the guide bush 11. Next, by applying high frequency power from the high frequency power supply 6 to the susceptor 3, plasma is excited in the vacuum processing vessel 1. At this time, a porous ceramic 11b is provided on the outer peripheral side of the guide bush 11, and a bush 14 made of porous ceramic is disposed between the susceptor 3 of the inert gas supply path 13 and the vacuum processing vessel 1. Since the flow distance of the flow path of the active gas is long and the conductance is large, glow discharge of the inert gas is prevented, and it is possible to perform a stable surface treatment on the substrate 2 to be processed by the excited plasma.

Next, a second embodiment of the present invention will be described.
This will be described with reference to FIG. Note that the present embodiment employs the first
The configuration of the third embodiment is the same as that of the first embodiment except for the guide bush 11, and the description of the same components will be omitted, and only the differences will be described.

The guide bush 11 of this embodiment is made of an insulator. As shown in FIG. 4, the guide bush 11 has a hole for supporting the elevating pin 10 so as to be able to move up and down, and a spiral having an opening degree of about 6% on the outer periphery. An inert gas flow path composed of the groove 11c is formed. Also in the present embodiment, since the flow path of the inert gas including the spiral groove 11c is formed on the outer peripheral side of the guide bush 11, the flow path distance is long, and the conductance is increased. It is possible to perform a stable surface treatment on the substrate 2 to be processed by the excited plasma.

[0015]

According to the vacuum processing apparatus of the present invention, as described above, the bush made of porous ceramic is arranged between the susceptor in the inert gas supply path and the vacuum processing vessel, and the guide bush is moved to the inner circumferential side. The guide bush is made of an insulator and has a hole that supports the lifting pin in the center, and has a spiral shape on the outer circumference. Since the inert gas flow path consisting of the grooves was formed, conductance was provided by making the flow path distance between the inert gas susceptor and the vacuum processing vessel longer with porous ceramics or spiral grooves. Thus, glow discharge of the inert gas can be prevented, and damage to the substrate to be processed due to abnormal discharge can be prevented.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing the overall configuration of a vacuum processing apparatus to which the present invention is applied.

FIGS. 2A and 2B show a configuration of a guide bush according to the first embodiment of the present invention, wherein FIG. 2A is a cross-sectional view and FIG.

FIG. 3 is a front view of a bush made of porous ceramic in the embodiment.

FIGS. 4A and 4B show a configuration of a guide bush according to a second embodiment of the present invention, wherein FIG. 4A is a side view and FIG. 4B is a front view.

5A and 5B show a conventional guide bush, in which FIG. 5A is a side view and FIG. 5B is a front view.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum processing container 2 Substrate to be processed 3 Susceptor 4 Reaction gas supply port 5 Vacuum pump 6 High frequency power supply 7 Inert gas introduction port 8 Inert gas exhaust means 10 Elevating pin 11 Guide bush 11a Insulator bush 11b Porous ceramic 11c Spiral Groove 12 Gap 13 Inert gas supply path 14 Bush made of porous ceramic

────────────────────────────────────────────────── ─── Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI H01L 21/3065 H05H 1/46 M H05H 1/46 H01L 21/302 B (72) Inventor Izumi Matsuda 1006 Kadoma Kadoma, Kadoma City, Osaka Prefecture Address Matsushita Electric Industrial Co., Ltd. (56) References JP-A-61-278144 (JP, A) JP-A-7-94496 (JP, A) JP-A 8-167593 (JP, A) JP-A-10 -237653 (JP, A) JP-A-7-201956 (JP, A) JP-A-7-321184 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/205 H01L 21/3065 H01L 21/68

Claims (2)

(57) [Claims] A vacuum processing vessel for accommodating a substrate to be processed;
Means for supplying a reaction gas to the vacuum processing vessel, means for evacuating the vacuum processing vessel, a susceptor for holding the substrate to be processed, a power supply for applying high frequency power for generating plasma in the vacuum processing vessel, Elevating pins for transporting the processing substrate, guide bushes for guiding the lifting pins, and an inert gas serving as a heat transfer medium in a gap between the processing substrate and the susceptor for adjusting the temperature of the processing substrate to a processing temperature. In a vacuum processing apparatus comprising an inert gas supply path for supplying air and an inert gas exhaust means for exhausting while controlling the pressure of the inert gas, a porous material is provided between the susceptor and the vacuum processing vessel in the inert gas supply path. A bush made of porous ceramic is arranged, and the guide bush is made of an inner / outer double structure made of an insulator bush supporting the elevating pin on the inner peripheral side and porous ceramic on the outer peripheral side. The vacuum processing apparatus according to claim. 2. A vacuum processing container for storing a substrate to be processed,
Means for supplying a reaction gas to the vacuum processing vessel, means for evacuating the vacuum processing vessel, a susceptor for holding the substrate to be processed, a power supply for applying high frequency power for generating plasma in the vacuum processing vessel, Elevating pins for transporting the processing substrate, guide bushes for guiding the lifting pins, and an inert gas serving as a heat transfer medium in a gap between the processing substrate and the susceptor for adjusting the temperature of the processing substrate to a processing temperature. In a vacuum processing apparatus comprising an inert gas supply path for supplying air and an inert gas exhaust means for exhausting while controlling the pressure of the inert gas, a porous material is provided between the susceptor and the vacuum processing vessel in the inert gas supply path. A bush made of high-quality ceramic is arranged, the guide bush is made of an insulator, has a hole for supporting the lifting pin in the center, and forms an inert gas flow path consisting of a spiral groove on the outer periphery The vacuum processing apparatus characterized by configuration as the the.