JP3257372B2 - Oscillator - Google Patents
OscillatorInfo
- Publication number
- JP3257372B2 JP3257372B2 JP25598795A JP25598795A JP3257372B2 JP 3257372 B2 JP3257372 B2 JP 3257372B2 JP 25598795 A JP25598795 A JP 25598795A JP 25598795 A JP25598795 A JP 25598795A JP 3257372 B2 JP3257372 B2 JP 3257372B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- oscillation
- control element
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Wire Bonding (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は発振制御用の制御素
子を備えた発振器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oscillator having a control element for controlling oscillation.
【0002】[0002]
【従来の技術】例えば温度補償機能付の発振器は基板上
に発振素子と制御素子を実装し、制御素子によってその
発振制御を行なっている。2. Description of the Related Art For example, an oscillator having a temperature compensation function has an oscillation element and a control element mounted on a substrate, and the control element controls the oscillation.
【0003】[0003]
【発明が解決しようとする課題】上記構成において問題
となるのは、基板上に発振素子と制御素子を並設しなけ
ればならないので、基板サイズが大型化するということ
である。The problem with the above arrangement is that the oscillation element and the control element must be provided side by side on the substrate, which increases the size of the substrate.
【0004】本発明は基板サイズの小型化を図ることを
目的とするものである。An object of the present invention is to reduce the size of a substrate.
【0005】[0005]
【課題を解決するための手段】そしてこの目的を達成す
るために本発明は、前記制御素子と発振素子を基板上に
おいて、下方の素子の電極が表出するごとく上下に重合
して実装し、下方の素子の表出している電極と、上方の
素子の電極をボンディングワイヤにてできるだけ接近さ
せて接続したものであり、これにより基板の小型化を図
るものである。In order to achieve this object, the present invention provides a control device and an oscillating device which are mounted on a substrate by superimposing them vertically so that the electrodes of the lower device are exposed. Bring the exposed electrode of the lower element and the electrode of the upper element as close as possible with a bonding wire.
The connection is made in such a manner that the size of the substrate is reduced.
【0006】[0006]
【発明の実施の形態】本発明の請求項1の発明によれば
基板上において、制御素子と発振素子を上下に重合して
実装しているので、基板サイズの小型化を図ることがで
きる。According to the first aspect of the present invention, a control element and an oscillating element are mounted vertically on a substrate, so that the size of the substrate can be reduced.
【0007】また下方の素子の電極はこの様な上下重合
実装にもかかわらず表出させているので、上方の素子の
電極とボンディングワイヤにて簡単に接続することがで
きる。Also, since the electrodes of the lower element are exposed despite such vertical stacking, they can be easily connected to the electrodes of the upper element by bonding wires.
【0008】またこの様なボンディングワイヤによる接
続は、発振素子の周波数変動を抑制することになる。[0008] In addition, such connection using a bonding wire suppresses frequency fluctuation of the oscillation element.
【0009】すなわちこの両電極間を基板上に設けた配
線パターンで接続した場合には、基板の吸湿にともなう
配線パターンの寄生容量の大きな変動により発振周波数
が大きく変動してしまうが、ボンディングワイヤで接続
した場合にはこのボンディングワイヤが基板上に中空状
態で存在することにより、寄生容量の変動を受けにく
く、この結果として発振素子の周波数変動が起きにくく
なる。That is, when these electrodes are connected by a wiring pattern provided on the substrate, the oscillation frequency greatly changes due to a large change in the parasitic capacitance of the wiring pattern due to moisture absorption of the substrate. When connected, the bonding wire is present in a hollow state on the substrate, so that it is less susceptible to fluctuations in parasitic capacitance, and as a result, frequency fluctuations of the oscillation element are less likely to occur.
【0010】図1、図2は本発明の一実施形態を示し、
1はガラスエポキシ基板よりなる基板で、この基板1の
上面には複数の配線パターン2と外部端子3が設けられ
ている。また基板1の上面には長方形の発振素子4と長
方形の制御素子5が上、下に重合した状態で実装されて
いる。この内制御素子5は基板1に設けた凹部1a内に
実装され、またこの制御素子5とは直交するように発振
素子4が基板1上に実装されている。FIGS. 1 and 2 show an embodiment of the present invention.
Reference numeral 1 denotes a substrate made of a glass epoxy substrate, and a plurality of wiring patterns 2 and external terminals 3 are provided on the upper surface of the substrate 1. On the upper surface of the substrate 1, a rectangular oscillation element 4 and a rectangular control element 5 are mounted in a state where they are superposed on each other. The control element 5 is mounted in a recess 1 a provided in the substrate 1, and the oscillation element 4 is mounted on the substrate 1 so as to be orthogonal to the control element 5.
【0011】そしてこの実装構造により制御素子5の電
極5aは上方に実装した発振素子4の両サイドにて表出
し、これら複数の電極5aは、基板1上の配線パターン
2とボンディングワイヤ6により接続され、また制御素
子5の上面の両端に設けた2つの電極5aと発振素子4
の電極4aもボンディングワイヤ6による直接中空配線
により接続されている。According to this mounting structure, the electrodes 5a of the control element 5 are exposed on both sides of the oscillation element 4 mounted above, and the plurality of electrodes 5a are connected to the wiring pattern 2 on the substrate 1 by bonding wires 6. The two electrodes 5a provided at both ends of the upper surface of the control element 5 and the oscillation element 4
The electrodes 4a are also directly connected by the hollow wires by the bonding wires 6.
【0012】すなわち発振素子4の発振制御はボンディ
ングワイヤ6を介して制御素子5によって行なわれ、ま
た発振出力は電極4a、ボンディングワイヤ6、制御素
子5を介して外部端子3から出力される。That is, the oscillation of the oscillation element 4 is controlled by the control element 5 via the bonding wire 6, and the oscillation output is output from the external terminal 3 via the electrode 4 a, the bonding wire 6 and the control element 5.
【0013】なお、発振素子4の下面全面及び上面には
シールド電極7が設けられている。この内上面のシール
ド電極7は発振素子4の電極4aが上面の側辺部を介し
て延長形成されているので、この延長部分も含めて電極
4aとは非接触状態となっている。なお、電極4aを延
長形成した理由は、制御素子5の電極5aと出来るだけ
接近させることにより、ボンディングワイヤ6による接
続を容易にするためである。Note that a shield electrode 7 is provided on the entire lower surface and the upper surface of the oscillation element 4. Since the electrode 4a of the oscillation element 4 is extended through the side of the upper surface, the shield electrode 7 on the inner upper surface is in non-contact with the electrode 4a including the extended portion. The reason why the electrode 4a is extended is to make the connection with the bonding wire 6 easy by bringing the electrode 4a as close as possible to the electrode 5a of the control element 5.
【0014】また上記実施例においては、制御素子5を
発振素子4の下方に設けたが、これは逆にしても良くし
かも下方の素子も凹部1a内に設ける必要もない。In the above embodiment, the control element 5 is provided below the oscillating element 4. However, the control element 5 may be reversed, and the lower element need not be provided in the recess 1a.
【0015】さらに上記実施例においては制御素子5の
電極5aを発振素子4の両サイドに表出させたが、これ
は片側において表出させるようにしてもよく、もちろん
そのために電極5aを制御素子5の表出一端に集中的に
設けても良い。Further, in the above embodiment, the electrodes 5a of the control element 5 are exposed on both sides of the oscillation element 4. However, the electrodes 5a may be exposed on one side. 5 may be provided intensively at the exposed end.
【0016】[0016]
【発明の効果】以上のように本発明は基板と、この基板
上に実装された発振素子と、この発振素子の制御を行う
とともに、前記基板上の実装された制御素子とを備え、
前記制御素子と発振素子を基板上において、下方の素子
の電極が表出するごとく上下に重合して実装し、下方の
素子の表出している電極と、上方の素子の電極をボンデ
ィングワイヤにてできるだけ接近させて接続したもので
ある。As described above, the present invention comprises a substrate, an oscillation element mounted on the substrate, and a control element mounted on the substrate for controlling the oscillation element.
On the substrate, the control element and the oscillating element are vertically stacked and mounted as if the electrodes of the lower element are exposed, and the exposed electrode of the lower element and the electrode of the upper element are bonded by bonding wires. They are connected as close as possible .
【0017】そして以上の構成とすれば基板上におい
て、制御素子と発振素子を上下に重合して実装している
ので、基板サイズの小型化を図ることができる。According to the above configuration, since the control element and the oscillation element are mounted on the substrate by being vertically stacked, the size of the substrate can be reduced.
【0018】また下方の素子の電極はこの様な上下重合
実装にもかかわらず表出させているので、上方の素子の
電極とボンディングワイヤにて簡単に接続することがで
きる。Further, since the electrodes of the lower element are exposed despite such vertical stacking, they can be easily connected to the electrodes of the upper element by bonding wires.
【0019】またこの様なボンディングワイヤによる接
続は、発振素子の周波数変動を抑制することになる。Further, such connection by the bonding wire suppresses the frequency fluctuation of the oscillation element.
【0020】すなわちこの両電極間を基板上に設けた配
線パターンで接続した場合には、基板の吸湿にともなう
配線パターンの寄生容量の大きな変動により発振周波数
が大きく変動してしまうが、ボンディングワイヤで接続
した場合にはこのボンディングワイヤが基板上に中空状
態で存在することにより、寄生容量の変動を受けにく
く、この結果として発振素子の周波数変動が起きにくく
なる。That is, when the two electrodes are connected by a wiring pattern provided on the substrate, the oscillation frequency greatly varies due to a large variation in the parasitic capacitance of the wiring pattern due to moisture absorption of the substrate. When connected, the bonding wire is present in a hollow state on the substrate, so that it is less susceptible to fluctuations in parasitic capacitance, and as a result, frequency fluctuations of the oscillation element are less likely to occur.
【図1】本発明の一実施形態の平面図FIG. 1 is a plan view of an embodiment of the present invention.
【図2】図1の断面図FIG. 2 is a sectional view of FIG.
【図3】図1の発振素子の斜視図FIG. 3 is a perspective view of the oscillation element of FIG. 1;
1 基板 2 配線パターン 3 外部端子 4 発振素子 4a 電極 5 制御素子 5a 電極 6 ボンディングワイヤ 7 シールド電極 DESCRIPTION OF SYMBOLS 1 Substrate 2 Wiring pattern 3 External terminal 4 Oscillation element 4a electrode 5 Control element 5a electrode 6 Bonding wire 7 Shield electrode
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H03B 5/36 H03B 5/04 H03B 5/32 H03H 9/02 H01L 21/60 301 ──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H03B 5/36 H03B 5/04 H03B 5/32 H03H 9/02 H01L 21/60 301
Claims (1)
された制御素子と、前記制御素子の上方に前記制御素子
の電極が表出するごとく上下に重合して実装された発振
素子と、発振素子の上下面の少なくとも一方の面に設け
られたシールド電極とからなり、前記発振素子は上面の
両端部に前記シールド電極とは非接触状態で設けられた
電極と、この電極の少なくとも一部を延長して形成した
延長電極とを有し、前記延長電極が前記制御素子の表出
している電極と直接ボンディングワイヤにて接続されて
いることを特徴とする発振器。 A substrate having a concave portion, and mounting in the concave portion
Control element and the control element above the control element
Oscillation mounted by overlapping vertically as if the electrodes of the
Element and at least one of the upper and lower surfaces of the oscillation element
And the oscillation element is provided on the upper surface.
Both ends were provided in a non-contact state with the shield electrode
An electrode and at least a part of the electrode are formed by extension.
And an extension electrode, wherein the extension electrode exposes the control element.
Connected directly to the bonding electrode with a bonding wire
Oscillator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25598795A JP3257372B2 (en) | 1995-10-03 | 1995-10-03 | Oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25598795A JP3257372B2 (en) | 1995-10-03 | 1995-10-03 | Oscillator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0998025A JPH0998025A (en) | 1997-04-08 |
JP3257372B2 true JP3257372B2 (en) | 2002-02-18 |
Family
ID=17286337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25598795A Expired - Fee Related JP3257372B2 (en) | 1995-10-03 | 1995-10-03 | Oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3257372B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4554398B2 (en) | 2005-03-03 | 2010-09-29 | セイコーエプソン株式会社 | Surface acoustic wave device and method for manufacturing surface acoustic wave device |
-
1995
- 1995-10-03 JP JP25598795A patent/JP3257372B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0998025A (en) | 1997-04-08 |
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