JP3249203B2 - Photomask manufacturing method - Google Patents
Photomask manufacturing methodInfo
- Publication number
- JP3249203B2 JP3249203B2 JP30355792A JP30355792A JP3249203B2 JP 3249203 B2 JP3249203 B2 JP 3249203B2 JP 30355792 A JP30355792 A JP 30355792A JP 30355792 A JP30355792 A JP 30355792A JP 3249203 B2 JP3249203 B2 JP 3249203B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- translucent
- defect
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 230000007547 defect Effects 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- 238000002834 transmittance Methods 0.000 claims description 8
- 238000007689 inspection Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 1
- 238000012937 correction Methods 0.000 description 13
- 230000010363 phase shift Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造に用い
るホトマスク、特に照明光の位相を変える処理を施した
ホトマスクの製造方法に係り、特に、半透明位相シフト
マスクに最適な欠陥修正工程を含むホトマスクの製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photomask used for manufacturing a semiconductor device, and more particularly to a method for manufacturing a photomask having a process of changing the phase of illumination light. The present invention relates to a method for manufacturing a photomask including the same.
【０００２】[0002]
【従来の技術】マスクパタンを転写する露光装置の解像
力を向上させる従来技術の一つとしてマスク透過光に位
相差を導入する方法がある。例えば、特開平04‐136854
号には、通常マスクの遮光部にあたる部分を半透明にし
て、そこから僅かに洩れる光に位相差を持たせることに
よって解像度の向上を実現する方法が開示されている。
しかし、マスク製造工程で発生する欠陥の修正について
は触れておらず、上記マスクを半導体素子の製造に適用
する際には無欠陥のマスクが必要であり、欠陥の修正が
大きな課題となっていた。2. Description of the Related Art As one of conventional techniques for improving the resolution of an exposure apparatus for transferring a mask pattern, there is a method of introducing a phase difference into light transmitted through a mask. For example, JP-A-04-136854
Japanese Patent Application Laid-Open No. H11-163,086 discloses a method of improving resolution by making a portion corresponding to a light-shielding portion of a mask translucent, and giving a slight difference from the light a phase difference.
However, it does not mention the correction of defects that occur in the mask manufacturing process, and when applying the mask to the manufacture of a semiconductor device, a defect-free mask is required, and the correction of defects has been a major issue. .
【０００３】また、通常の位相シフトマスクの修正方法
については、特開平03‐196041号に示されているよう
に、位相シフト膜の修正では、透過率を低下させること
なく所望の位相差に修復することが必要であり、高精度
かつ極めて複雑な修正工程が必要となる。[0003] As for a normal phase shift mask correction method, as disclosed in Japanese Patent Application Laid-Open No. H03-196041, correction of a phase shift film restores a desired phase difference without lowering the transmittance. And a highly accurate and extremely complicated correction process is required.
【０００４】[0004]
【発明が解決しようとする課題】ホトマスクの製造につ
いて従来技術は上記のような課題を有していた。本発明
の目的は、上記従来技術の有していた課題を解決して、
従来の位相シフトマスクの修正方法とは異なる、半透明
位相シフトマスクに最適な簡単な欠陥修正工程を含むホ
トマスクの製造方法を提供することにある。The prior art has the above-mentioned problems in the production of a photomask. An object of the present invention is to solve the above-mentioned problems of the related art,
An object of the present invention is to provide a method for manufacturing a photomask including a simple defect repairing step which is different from a conventional method for repairing a phase shift mask and which is optimal for a translucent phase shift mask.
【０００５】[0005]
【課題を解決するための手段】この目的を達成するた
め、本発明においては、透明基板に、開口パターンを含
む所望のパターンを有する半透明膜を形成する工程と、
前記半透明膜が所望のパターンとなっているかを検査す
る工程と、前記検査にて前記半透明膜の領域内に検出さ
れ、周囲が前記半透明膜で囲まれた欠け欠陥上及び前記
欠け欠陥の周縁部の前記半透明膜上に遮光膜を形成する
工程とを行ない、前記半透明膜の領域を透過した光と前
記半透明膜の領域内に設けられた開口領域を透過した光
とは位相が互いに反転するようにし、前記半透明膜の光
の透過率を１〜３０％の範囲とする。また、透明基板
に、開口パターンを含む所望のパターンを有する半透明
膜を形成する工程と、前記半透明膜が所望のパターンと
なっているかを検査する工程と、前記検査にて前記半透
明膜の領域内に検出され、周囲が前記半透明膜で囲まれ
た第１の欠け欠陥上及び前記第１の欠け欠陥の周縁部の
前記半透明膜上に遮光膜を形成するとともに、前記半透
明膜の領域端部に検出された第２の欠け欠陥上及び前記
第２の欠け欠陥の周縁部の前記半透明膜上に前記遮光膜
を形成し、かつ前記遮光膜を透明パターン内部側にまで
僅かに延伸して形成する工程とを行ない、前記半透明膜
の領域を透過した光と前記半透明膜の領域内に設けられ
た開口領域を透過した光とは位相が互いに反転するよう
にし、前記半透明膜の光の透過率を１〜３０％の範囲と
する。この場合、前記第２の欠け欠陥は、前記開口パタ
ーンの周縁部に位置しているようにしてもよい。 According to the present invention, there is provided a transparent substrate including an opening pattern.
Forming a translucent film having a non-desired pattern,
Wherein the step of semitransparent film is checked whether is a desired pattern, was detected in the region of the translucent film at the inspection, chipping defects on and the chipping defect surrounded around said semitransparent film Forming a light-shielding film on the semi-transparent film at the peripheral edge of the light-transmitting film.
Light transmitted through the opening area provided in the area of the translucent film
Means that the phases are inverted from each other, and the light transmittance of the translucent film is in the range of 1 to 30%. Also, a translucent substrate having a desired pattern including an opening pattern on a transparent substrate.
Forming a film, and a step of examining whether the semi-transparent film is a desired pattern, it said at the inspection semipermeable
Detected in the region of the bright film , the periphery of the first defective defect surrounded by the translucent film and the peripheral portion of the first defective defect
Forming a light-shielding film on the translucent film,
On the second chipped defect detected at the edge of the area of the bright film and
A light-shielding film on the semi-transparent film at the periphery of the second chip defect;
Is formed, and the light shielding film is extended to the inside of the transparent pattern.
And forming the film by stretching it slightly.
Provided in the region of the translucent film with the light transmitted through the region
So that the phase of the light transmitted through the open area is inverted
And the light transmittance of the translucent film is in the range of 1 to 30%. In this case, the second chip defect may be located at a peripheral portion of the opening pattern .
【０００６】[0006]
【作用】半透明位相シフト部の欠け欠陥の修正におい
て、大面積内部にある欠陥は遮光膜を選択的に被着させ
ることによって達成される。これは、大面積の内部は遮
光部として作用するのみであり、この部分の位相差はパ
タン形成になんら関係がないことによる。しかし、透過
部に接触あるいは隣接して存在する欠け欠陥はレジスト
パタン形成に影響する。透過部に接触して存在する欠け
欠陥の修正を遮光膜の被着のみで行った場合、その修正
部では本来半透明膜から透過した光の位相反転効果は利
用できないため、透過部で得られる光強度が増加し、パ
タンの変形が発生する。この現象を回避するためには、
光透過部の一部に遮光膜を被着する。In the correction of the chipping defect of the translucent phase shift portion, the defect inside the large area is achieved by selectively depositing the light shielding film. This is because the inside of the large area only functions as a light-shielding portion, and the phase difference in this portion has nothing to do with pattern formation. However, chipping defects that are in contact with or adjacent to the transmitting portion affect the formation of the resist pattern. If the chipped defect existing in contact with the transmission part is corrected only by the attachment of the light-shielding film, the correction part cannot obtain the phase reversal effect of the light transmitted from the semi-transparent film, so that it can be obtained in the transmission part. The light intensity increases and the pattern is deformed. To avoid this,
A light shielding film is applied to a part of the light transmitting portion.
【０００７】これにより、過剰な光強度を低下させるこ
とができ、良好に欠陥を修正することができる。As a result, excessive light intensity can be reduced, and defects can be satisfactorily corrected.
【０００８】[0008]
【実施例】以下、本発明のホトマスクの製造方法につい
て実施例によって具体的に説明する。図１(a)〜(d)は本
発明方法の一実施例の工程を示す断面図である。まず、
(a)に示すように、透明なマスク基板１上に半透明膜２
を被着し、次いで位相反転膜３を被着させた。ここで、
マスク基板１としては石英を用いた。また、半透明膜２
としては Cr を用いたが、これに限るものではなく、例
えば Mo、Ti、Ta、W、Siなど、またはそれらの酸化物を
用いることができる。また、この膜は１層膜に限定する
ものではなく、例えば Cr 膜の上面或いは下面或いはそ
の双方に酸化クロム層等を配置した複合膜であっても良
い。半透明膜であることが必要条件である。また、本実
施例の場合半透明膜２の透過率は15％としたが、この値
に限定されるものではなく、目的のパタン形成条件に応
じて決定することができるものであり、好ましい条件は
１〜30％の範囲である。また、位相反転膜３としては塗
布珪素化合物：SOG(Spin on Glass)を用いたが、これに
限定されるものではなく、たとえば、SiO２、Si３N４な
ど露光光を透過する膜であれば適用することができる。
また、この膜の厚さは、マスク基板１を透過する光の位
相と半透明膜２及び位相反転膜３を透過する光の位相と
が反転するように調整した。EXAMPLES The method for manufacturing a photomask according to the present invention will now be described in detail with reference to examples. 1 (a) to 1 (d) are sectional views showing the steps of an embodiment of the method of the present invention. First,
As shown in (a), a translucent film 2 is formed on a transparent mask substrate 1.
Was applied, and then the phase inversion film 3 was applied. here,
Quartz was used as the mask substrate 1. Also, the translucent film 2
Although Cr was used as the material, the material is not limited to Cr, and for example, Mo, Ti, Ta, W, Si, or the like, or an oxide thereof can be used. Further, this film is not limited to a single-layer film, and may be a composite film in which a chromium oxide layer or the like is disposed on the upper surface, the lower surface, or both of the Cr film. It is a necessary condition to be a translucent film. In the present embodiment, the transmittance of the translucent film 2 is set to 15%. However, the transmittance is not limited to this value, and can be determined according to the target pattern forming condition. Ranges from 1 to 30%. Further, as the phase inversion film 3, a coated silicon compound: SOG (Spin on Glass) was used, but the invention is not limited to this. For example, a film such as SiO 2 or Si 3 N 4 that transmits exposure light may be used. If applicable.
The thickness of this film was adjusted so that the phase of light passing through the mask substrate 1 and the phase of light passing through the translucent film 2 and the phase inversion film 3 were inverted.
【０００９】次に、(b)に示すように、レジストパタン
４を形成した。ここで、レジストとしては電子線感応レ
ジストを用い、レジストの露光は電子線描画装置を用い
て行ったが、光感光レジストと光露光装置との組合せで
あっても良い。この時点で、目標のレジスト除去部５以
外にレジスト欠け部６とパタン５に接したレジスト欠け
部７とが発生したが、通常のマスク作成ではこの段階で
欠陥検査は行わず、欠陥の発生は認定できないので、こ
のまま工程を進めた。Next, a resist pattern 4 was formed as shown in FIG. Here, an electron beam sensitive resist was used as the resist, and the exposure of the resist was performed using an electron beam lithography apparatus. However, a combination of a photosensitive resist and a light exposure apparatus may be used. At this point, in addition to the target resist removing portion 5, a resist missing portion 6 and a resist missing portion 7 in contact with the pattern 5 are generated. However, in normal mask making, a defect inspection is not performed at this stage. Since we could not be certified, we proceeded with the process.
【００１０】次に、(c)に示すように、レジスト４をマ
スクとして位相反転膜３のエッチングを行い、続いて半
透明膜２の加工を行い、さらに、通常の方法でレジスト
４の除去を行った。ここで、位相反転膜３及び半透明膜
２の加工は反応性イオンエッチングを用いて行ったが、
ドライエッチング加工と湿式加工とを組合せて行うこと
もできる。また、位相反転膜３及び半透明膜２の加工は
連続して行ったが、これに限定されるものではなく、例
えば、位相反転膜３の加工後レジスト４を除去し、その
後、位相反転膜３をマスクとして半透明膜２を加工して
も良い。この段階で通常の方法でマスク欠陥検査を行
い、上記欠陥６及び７が検出された。Next, as shown in (c), the phase inversion film 3 is etched using the resist 4 as a mask, the semi-transparent film 2 is processed, and the resist 4 is removed by a usual method. went. Here, the processing of the phase inversion film 3 and the translucent film 2 was performed using reactive ion etching.
Dry etching and wet processing can be performed in combination. The processing of the phase inversion film 3 and the translucent film 2 is performed continuously, but is not limited to this. For example, after processing the phase inversion film 3, the resist 4 is removed. The semi-transparent film 2 may be processed using the mask 3 as a mask. At this stage, a mask defect inspection was performed by an ordinary method, and the above defects 6 and 7 were detected.
【００１１】次に、(d)に示すように、欠陥６及び７の
部分に選択的にそれぞれ遮光膜８及び９を被着した。欠
陥７の部分では、光透過膜５の部分に僅かに遮光膜９が
はみ出すように被着した。ここで、遮光膜８及び９とし
ては Cr 膜を用いたが、Al、Mo、Ti など遮光性の膜を
形成する材料であれば使用可能である。また、ここでは
半透明膜２の上に位相反転膜３を配置したが、位相反転
膜３を半透明膜２の下に配置した場合でもエッチングの
順序が変わるだけであり、上記工程とほぼ同じに進める
ことができる。また、位相反転の特性と半透明の特性と
を１層で達成できる材料を用いれば、半透明膜２、位相
反転膜３のように２層にする必要がなく、１層で目標を
達成することができ、膜のエッチングも１回で済ませる
ことができる。このように、半透明位相シフトマスクの
構造が変わっても、上記欠陥修正の方法を適用すること
ができる。Next, as shown in (d), light-shielding films 8 and 9 were selectively applied to the portions of defects 6 and 7, respectively. At the portion of the defect 7, the light shielding film 9 was applied so as to slightly protrude from the light transmitting film 5. Here, Cr films are used as the light shielding films 8 and 9, but any material that forms a light shielding film, such as Al, Mo, or Ti, can be used. Further, here, the phase inversion film 3 is arranged on the translucent film 2. However, when the phase inversion film 3 is arranged under the translucent film 2, only the order of etching is changed. You can proceed to. Further, if a material that can achieve the phase inversion property and the translucent property in one layer is used, it is not necessary to use two layers as in the case of the translucent film 2 and the phase inversion film 3, and the target is achieved with one layer. And the film can be etched only once. As described above, even if the structure of the translucent phase shift mask changes, the above-described defect repair method can be applied.
【００１２】図２に欠陥修正の様子を平面形状で示す。
(a)は欠陥修正前の状態で、10が半透明部、11、12 が透
明パタン部、13、14 が半透明膜が欠けた欠陥部、15 が
半透明膜が残った欠陥を示す。(b)は欠陥修正後の状態
で、欠陥14は遮光膜17で完全に覆い、欠陥15は18の部分
にレーザビームを照射して選択的に除去した。このと
き、露出した基板に対して欠陥15が選択的に除去できな
い場合は欠陥15と同じ形状あるいは内接する図形で除去
すればよい。また、基板がエッチングされないように、
基板と半透明膜との間に予めエッチングストッパ膜を配
置してもよい。FIG. 2 is a plan view showing the state of defect correction.
(a) is a state before defect correction, where 10 is a translucent portion, 11 and 12 are transparent pattern portions, 13 and 14 are defective portions lacking a translucent film, and 15 is a defect where a translucent film remains. (b) shows a state after defect correction. The defect 14 is completely covered with a light shielding film 17, and the defect 15 is selectively removed by irradiating a part 18 with a laser beam. At this time, if the defect 15 cannot be selectively removed from the exposed substrate, the defect 15 may be removed in the same shape or inscribed figure as the defect 15. Also, to prevent the substrate from being etched,
An etching stopper film may be arranged beforehand between the substrate and the translucent film.
【００１３】透明パタン部12に接触して存在する欠陥13
の修正は遮光膜16を被着することによって行った。ここ
で、遮光膜16は透明パタン12内にはみ出して形成した。
このはみ出し量は、このマスクを使用する投影光学系の
特性に依存して決められる。ここで使用した縮小投影露
光装置は波長365nm、レンズの開口数(NA)は0.52であ
る。 この光学系で遮光膜16のはみ出し量の最適値をシ
ミュレーションにより検討した。その結果を図３に示
す。透明パタン12の大きさは設計値で0.5μm角である。Defect 13 existing in contact with transparent pattern portion 12
Was corrected by applying a light-shielding film 16. Here, the light-shielding film 16 is formed so as to protrude into the transparent pattern 12.
The amount of protrusion is determined depending on the characteristics of the projection optical system using this mask. The reduction projection exposure apparatus used here has a wavelength of 365 nm and a numerical aperture (NA) of the lens of 0.52. With this optical system, the optimal value of the amount of protrusion of the light shielding film 16 was examined by simulation. The result is shown in FIG. The size of the transparent pattern 12 is a designed value of 0.5 μm square.
【００１４】(a)ははみ出し量を０にした修正１のとき
(図２(a)遮光パタン16の左側のエッジが透明パタン12の
エッジと重なった場合)の図２内 A‐B 部で得られる光
強度分布を示す。破線で示した欠陥がない正常パタンで
の光強度分布に比べて、実線で示した修正１の時の光強
度分布が右側にシフトしていることがわかる。これに対
し、図２(b)遮光膜16を透明パタン12に0.05μmだけはみ
出して形成した場合の光強度分布修正２は、図３(b)に
示すように、正常パタンの光強度とほぼ同じ位置に形成
されている。すなわち、遮光パタンを透明パタン内には
み出して形成することにより余分な光を減光することが
でき、パタン位置のシフトなどを防ぐことができる。な
お、ここでははみ出し量を0.05μmとしたが、この値に
限られるものではなく、透明パタンの大きさ等により最
適値を求める必要がある。また、透明パタンが十分大き
い場合あるいはパタンエッジの位置ずれが許される設計
の場合は、必ずしも透過パタン内にはみ出して修正する
必要はない。また、遮光膜16は完全な遮光膜でなくても
構わず、例えば透過率が10％以下であれば修正可能であ
る。また、透明パタンから離れた位置にある半透明膜の
欠け欠陥は、従来の Cr の欠け欠陥に比べて、転写され
にくい。これは、半透明膜の欠け欠陥の場合、欠陥のエ
ッジ部で位相反転が起るため、あるパタンサイズ以下で
は、欠陥内部の光強度は同じサイズの Cr 欠陥の光強度
に比べて小さいことによる。例えば、この光学系を用い
た場合は、設計寸法0.4μm角の寸法では Cr 欠け欠陥は
転写されたが、半透明膜の欠陥は転写されなかった。従
って、半透明膜の0.4μm角以下の欠陥は修正しなかっ
た。(A) In the case of correction 1 in which the amount of protrusion is 0
FIG. 2 (a) shows the light intensity distribution obtained at the portion AB in FIG. 2 when the left edge of the light-shielding pattern 16 overlaps with the edge of the transparent pattern 12. FIG. It can be seen that the light intensity distribution at the time of Modification 1 shown by the solid line is shifted to the right as compared to the light intensity distribution in the normal pattern having no defect indicated by the broken line. On the other hand, as shown in FIG. 3B, the light intensity distribution correction 2 when the light-shielding film 16 is formed so as to protrude from the transparent pattern 12 by 0.05 μm is substantially equal to the light intensity of the normal pattern. It is formed at the same position. That is, by forming the light-shielding pattern so as to protrude into the transparent pattern, excess light can be reduced, and a shift in the pattern position can be prevented. Here, the protruding amount is set to 0.05 μm, but is not limited to this value, and it is necessary to obtain an optimum value according to the size of the transparent pattern and the like. In the case where the transparent pattern is sufficiently large, or in the case of a design in which the positional displacement of the pattern edge is allowed, it is not always necessary to correct the pattern by protruding into the transparent pattern. Further, the light-shielding film 16 does not have to be a complete light-shielding film, and can be modified if the transmittance is 10% or less, for example. Further, the chipping defect of the translucent film located at a position away from the transparent pattern is less likely to be transferred than the conventional chipping defect of Cr. This is due to the fact that in the case of a chipped defect in a translucent film, phase inversion occurs at the edge of the defect. . For example, in the case of using this optical system, Cr-deficient defects were transferred at a design dimension of 0.4 μm square, but defects of the translucent film were not transferred. Therefore, defects of 0.4 μm square or less in the translucent film were not corrected.
【００１５】また、異なる修正方法として、図２(a)の
欠陥13を修正する場合、該欠陥を第１の遮光膜で覆うと
共に、パタン12を挾んだ反対側の対称位置に上記第１の
遮光膜と同じ図形の第２の遮光膜を配置するという方法
もある。この方法によってもパタン12の位置ずれを防止
することができる。When the defect 13 shown in FIG. 2A is modified as a different modification method, the defect is covered with a first light-shielding film, and the first defect is located at a symmetrical position opposite to the pattern 12. There is also a method of arranging a second light-shielding film having the same figure as the light-shielding film. This method can also prevent the pattern 12 from shifting.
【００１６】[0016]
【発明の効果】以上述べてきたように、ホトマスクの製
造方法を本発明構成の方法とすることによって、従来技
術の有していた課題を解決して、従来の位相シフトマス
クの修正方法とは異なる半透明位相シフトマスクに最適
な簡単な欠陥修正工程を含むホトマスクの製造方法を提
供することができた。As described above, the problem of the prior art can be solved by using the method of manufacturing the photomask according to the present invention to solve the problem of the prior art. A method for manufacturing a photomask including a simple defect repairing step optimal for different translucent phase shift masks can be provided.
【００１７】これによって、工業的に有用なマスクの製
造が可能となり、超 LSI の製造を光リソグラフィを用
いて実現することが可能となって、工業的に極めて有益
である。This makes it possible to manufacture an industrially useful mask and to realize the manufacture of an VLSI using optical lithography, which is extremely useful industrially.
【図１】本発明のホトマスク製造方法の製造工程を示す
断面図。FIG. 1 is a sectional view showing a manufacturing process of a photomask manufacturing method according to the present invention.
【図２】本発明方法による欠陥修正の様子を示す平面
図。FIG. 2 is a plan view showing a state of defect correction by the method of the present invention.
【図３】光強度分布を示すグラフ。FIG. 3 is a graph showing a light intensity distribution.
１…マスク基板、２…半透明膜、３…位相反転膜、８、
９、16、17…遮光膜、13、14…半透明欠け欠陥。DESCRIPTION OF SYMBOLS 1 ... Mask substrate, 2 ... Translucent film, 3 ... Phase inversion film, 8,
9, 16, 17: light-shielding film, 13, 14, ... translucent chipping defect.
Claims (3)
ターンを有する半透明膜を形成する工程と、前記半透明膜 が所望のパターンとなっているかを検査す
る工程と、 前記検査にて前記半透明膜の領域内に検出され、周囲が
前記半透明膜で囲まれた欠け欠陥上及び前記欠け欠陥の
周縁部の前記半透明膜上に遮光膜を形成する工程とを有
し、前記半透明膜の領域を透過した光と前記半透明膜の
領域内に設けられた開口領域を透過した光とは位相が互
いに反転し、前記半透明膜は光の透過率が１〜３０％の
範囲であることを特徴とするホトマスクの製造方法。To 1. A transparent substrate, forming a semi-transparent film having a desired pattern including the aperture pattern, the step of examining whether the semi-transparent film is a desired pattern, said at the inspection Detected in the area of the translucent film ,
And forming a light shielding film above on the translucent film of the peripheral portion of said translucent film chipping defects on and the enclosed by chipping defect, the light transmitted through the region of the semi-transparent film the translucent Membrane
The phase of the light transmitted through the aperture region provided in the region is different from that of the light transmitted through the aperture region.
The method of manufacturing a photomask , wherein the translucent film has a light transmittance of 1 to 30%.
ターンを有する半透明膜を形成する工程と、前記半透明膜 が所望のパターンとなっているかを検査す
る工程と、 前記検査にて前記半透明膜の領域内に検出され、周囲が
前記半透明膜で囲まれた第１の欠け欠陥上及び前記第１
の欠け欠陥の周縁部の前記半透明膜上に遮光膜を形成す
るとともに、前記半透明膜の領域端部に検出された第２
の欠け欠陥上及び前記第２の欠け欠陥の周縁部の前記半
透明膜上に前記遮光膜を形成し、かつ前記遮光膜を透明
パターン内部側にまで僅かに延伸して形成する工程とを
有し、前記半透明膜の領域を透過した光と前記半透明膜
の領域内に設けられた開口領域を透過した光とは位相が
互いに反転し、前記半透明膜は光の透過率が１〜３０％
の範囲であることを特徴とするホトマスクの製造方法。To 2. A transparent substrate, forming a semi-transparent film having a desired pattern including the aperture pattern, the step of examining whether the semi-transparent film is a desired pattern, said at the inspection Detected in the area of the translucent film ,
A first chip defect surrounded by the translucent film and the first chip defect ;
Forming a light-shielding film on the semi-transparent film at the periphery of the chipped defect
And the second detected at the end of the area of the translucent film .
And the half of the periphery of the second notch defect
The light shielding film is formed on a transparent film, and the light shielding film is transparent.
Forming a pattern by slightly extending to the inside of the pattern , wherein the light transmitted through the region of the translucent film and the translucent film
Phase with the light transmitted through the aperture area provided in the area
The translucent films have a light transmittance of 1 to 30%.
A method for manufacturing a photomask, wherein
の周縁部に位置していることを特徴とする請求項２記載
のホトマスクの製造方法。3. The photomask manufacturing method according to claim 2 , wherein said second chipped defect is located at a peripheral portion of said opening pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30355792A JP3249203B2 (en) | 1992-11-13 | 1992-11-13 | Photomask manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30355792A JP3249203B2 (en) | 1992-11-13 | 1992-11-13 | Photomask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06148866A JPH06148866A (en) | 1994-05-27 |
| JP3249203B2 true JP3249203B2 (en) | 2002-01-21 |
Family
ID=17922452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30355792A Expired - Lifetime JP3249203B2 (en) | 1992-11-13 | 1992-11-13 | Photomask manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3249203B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3312708B2 (en) * | 1994-09-16 | 2002-08-12 | 株式会社東芝 | Defect repair method for phase shift mask |
| JP3465091B2 (en) * | 1994-10-05 | 2003-11-10 | 大日本印刷株式会社 | Concave defect repair method |
| JP4297693B2 (en) | 2003-01-31 | 2009-07-15 | 株式会社ルネサステクノロジ | Photomask, photomask manufacturing method, and photomask manufacturing apparatus |
| JP4752495B2 (en) * | 2005-12-22 | 2011-08-17 | 大日本印刷株式会社 | Defect correction method for photomask with gradation |
| TWI422962B (en) * | 2006-12-05 | 2014-01-11 | Hoya Corp | Gray tone mask inspecting method, method of producing a gray tone mask for use in manufacturing a liquid crystal device and pattern transferring method |
| JP5036349B2 (en) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | Gray-tone mask defect correcting method and gray-tone mask manufacturing method |
| JP6960741B2 (en) * | 2017-02-02 | 2021-11-05 | 株式会社エスケーエレクトロニクス | How to fix defects in phase shift mask |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04165353A (en) * | 1990-10-30 | 1992-06-11 | Oki Electric Ind Co Ltd | Correction method of photo-mask |
-
1992
- 1992-11-13 JP JP30355792A patent/JP3249203B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06148866A (en) | 1994-05-27 |
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