JP3235380B2 - High frequency switch - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency switch for switching a signal path in a high-frequency circuit of a mobile communication device or the like, and more particularly to a high-frequency switch corresponding to diversity transmission / reception switching. Things.

[0002]

2. Description of the Related Art Generally, as shown in FIG. 4, a high-frequency switch Z1 corresponding to diversity transmission / reception switching includes a first antenna ANT1 and a first reception circuit RX1.
, The connection between the first antenna ANT1 and the transmission circuit TX, and the second antenna ANT2
The first antenna ANT1, the second antenna ANT2, and the first receiving circuit are used to switch the connection between the first antenna ANT2 and the second receiving circuit RX2 and to switch the connection between the second antenna ANT2 and the transmitting circuit TX. RX1, a second antenna ANT2, and a transmission circuit TX. The high-frequency switch Z1 has three high-frequency switches Z1.
By connecting a, Z1b, and Z1c in series, it is possible to respond to diversity transmission / reception switching.

Conventionally, a pin diode switch or a GaAs semiconductor switch has been used as the high frequency switches Z1a, Z1b, Z1c constituting the high frequency switch Z1 corresponding to the diversity transmission / reception switching.

[0004]

However, when a pin diode switch is used, a moving body is expected to be large because a choke coil must be mounted on a substrate and a strip line must be routed, and the size of the moving body is expected to be further reduced in the future. It is difficult to meet the demands of fields such as communication equipment. In addition, since a high-frequency switch is configured by connecting a plurality of components, element values such as stray capacitance and stray inductance enter a connection line, and there is a problem that it is difficult to reliably obtain desired characteristics. .

When a GaAs semiconductor switch is used, two control power supplies, positive and negative, are required. Accordingly, the number of terminals for connecting the two control power supplies, positive and negative, is increased, so that there is a problem that the size becomes large. Furthermore, it is necessary to apply a large control voltage to turn on the GaAs semiconductor switch, which causes a problem that current consumption increases. In addition, it is necessary to add an impedance matching circuit between each of the GaAs semiconductor switches, and further, since three GaAs semiconductor switches are required, there is a problem that the cost is increased.

SUMMARY OF THE INVENTION Therefore, a main object of the present invention is to provide a high frequency switch which can be downsized and which can reliably obtain desired characteristics and which is compatible with diversity transmission / reception switching. Further, it is an object of the present invention to provide a high-frequency switch that operates with only a single (positive or negative) control power supply, does not require an impedance matching circuit, can reduce current consumption, and is low-cost and capable of performing diversity transmission and reception switching. It is.

[0007]

In order to achieve the above object, the present invention has five ports and four diodes, and is capable of switching connection between the first port and the second port. Switching the connection between the second port and the third port, switching the connection between the third port and the fourth port, and switching the connection between the fourth port and the fifth port. The first diode between the first port and the ground, the second diode between the second port and the third port, the third port A high-frequency switch in which the third diode is connected between the third port and the fourth port, and the fourth diode is connected between the fifth port and the ground. Outside the multilayer board Wherein to form a five port mounting the diode, at least the outer surface of the multilayer substrate or the dielectric layer, wherein the ground electrode 5
Forming a signal line connected to one of the ports and the diode; forming a distributed constant line connected between the signal line and the ground electrode on the same plane as the signal line; A bias voltage is applied to the diode.

The first port is connected to a cathode of the first diode, the anode is connected to ground, and a second diode is connected between the second port and the third port. A third diode is connected to the second diode in a forward direction between the third port and the fourth port, and a cathode of the fourth diode is connected to the fifth port.
The first distributed constant line is connected between the first port and the second port, and the first distributed constant line is connected to the second port. A second distributed constant line is connected between a connection point of the second and the ground, and a third distributed constant line is connected between a connection point of the second port and the second diode and the ground. ,
A fourth distributed constant line is connected between a connection point between the third diode and the fourth port and the ground,
Between said ports fifth port, a sixth distributed constant line connected, between the connection point and the ground of the distributed constant line and the fourth port of the sixth, fifth distributed constant A seventh distributed constant line is connected between a connection point of the second diode and the third diode and the ground, and a ground side of the third distributed constant line and the fourth Between the grounded side of the distributed constant line and the first resistor and the second
A first control terminal is connected to the ground side of the first diode via a third resistor, and a second control terminal is connected to the ground side of the second distributed constant line. Connecting a third control terminal to a connection point between the first resistor and the second resistor, connecting a fourth control terminal to the ground side of the seventh distributed constant line, A fifth control terminal is connected to the ground side of the fifth distributed constant line, and a sixth control terminal is connected to the ground side of the fourth diode via a fourth resistor.

Further, a fifth resistor to an eighth resistor are connected in parallel with the first to fourth diodes, respectively.

Also, a series circuit of an eighth distributed constant line and a first capacitor is connected in parallel with the second diode, and a ninth distributed constant line and a second circuit are connected in parallel with the third diode. And a series circuit with a capacitor of the second type and a parallel resonance circuit formed by the respective capacitance components when the second and third diodes are off and the respective inductance components of the eighth and ninth distributed constant lines. It is characterized by comprising.

A series circuit of an eighth distributed constant line and a first capacitor and a third capacitor are connected in parallel with each other in parallel with the second diode, and a ninth circuit is connected in parallel with the third diode. A series circuit of a distributed constant line and a second capacitor and a fourth capacitor are connected in parallel with each other, and the respective capacitances and the third and fourth capacitors when the second and third diodes are off. , And a parallel resonance circuit is constituted by the respective inductance components of the eighth and ninth distributed constant lines.

Further, a strip line is used as the distributed constant line.

[0013]

According to the above arrangement, since each element is formed in a multilayer structure in a multilayer substrate formed by laminating a plurality of dielectric layers, a one-chip high-frequency switch can be obtained, and the cost can be reduced. Becomes lower. Also, element values such as stray capacitance and stray inductance do not enter.

[0014] Further, by using four diodes and providing control terminals at six locations, the connection between the first port and the second port can be switched, and the first port and the third port can be connected.
, The connection between the third port and the fourth port, and the connection between the fourth port and the fifth port.

Further, by connecting the ground side of the third distributed constant line and the ground side of the fourth distributed constant line via a resistor, it can be driven by a single positive or negative power supply, and the circuit arrangement Is simplified.

Also, since it can be a one-chip high-frequency switch and can be driven by a single positive or negative power supply, the whole is higher than a conventional high-frequency switch using a pin diode switch or a GaAs semiconductor switch. Becomes smaller. Further, the control voltage for turning on the diode is smaller than the control voltage for turning on the GaAs semiconductor switch.

Further, by designing each component at the same time to form a high-frequency switch, it is possible to perform design with impedance matching.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the high-frequency switch according to the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view of a high-frequency switch Z2 according to one embodiment of the present invention. The high-frequency switch Z2 includes a multilayer substrate T1. The multilayer substrate T1 is shown in FIG.
Are formed by sequentially laminating a first dielectric layer to a 22nd dielectric layer 1 to 22 shown in FIG. First dielectric layer 1
Diodes D1 to D4 are mounted thereon. Also, the second, third, fourth, sixth, seventh, eighth, ninth, thirteenth, nineteenth, and twenty-first dielectric layers 2, 3, 4, 6, 7, 8, 9,
13, 19, and 21, capacitor electrodes 31
And 32,33-37,38-40,49-51,52-
56,57-59,60-64,66-72,81-8
3,85-87 are formed. Further, the fifth dielectric layer 5
On top, capacitor electrodes 41 to 45 and strip line electrodes 46 to 48 are formed. Further, strip line electrodes 74 to 79 are formed on the sixteenth dielectric layer 16. In addition, the twelfth, fourteenth, eighteenth, twentieth, and twenty-second
Ground electrodes 65, 73, 80, 84, 88 are formed on the dielectric layers 12, 14, 18, 20, 22, respectively. Further, on the lower surface of the 22nd dielectric layer 22 (labeled 22u in FIG. 2), the antenna external electrode 8
9, 94, a transmitting circuit external electrode 91, a receiving circuit external electrode 95, 99, and a control external electrode 90, 9
2, 93, 96, 98, 99 and the ground external electrode 9
7 is formed.

Then, signal line electrodes (not shown) and via-hole electrodes (not shown) are formed at required locations on the dielectric layers 1 to 22, and external electrodes (FIG. 4) are formed on the outer surface of the multilayer substrate T1. (Not shown), and via the via-hole electrode and the external electrode, the aforementioned diode, capacitor electrode, stripline electrode, ground electrode, external electrode for antenna, external electrode for transmitting circuit, external electrode for receiving circuit, and external electrode for control. By appropriately connecting the external electrode and the ground external electrode, a high-frequency switch Z2 is formed equivalent to a circuit configuration shown in FIG. 3 described later.

In manufacturing such a high-frequency switch, a dielectric ceramic green sheet is prepared. Then, an electrode paste is printed on the dielectric ceramic green sheet according to the shape of each electrode / signal line. Next, a dielectric ceramic green sheet on which an electrode paste is printed in a predetermined shape is laminated and fired, thereby forming a multilayer substrate formed by laminating dielectric layers. At this time, after laminating the dielectric ceramic green sheets, an electrode paste may be printed in the shape of the external electrode and fired integrally to form the high-frequency switch.

As described above, since each element is formed in a concentrated manner by the laminated structure, a one-chip high-frequency switch having a small overall size can be obtained, and the cost can be reduced. Further, since element values such as stray capacitance and stray inductance do not enter, desired characteristics can be obtained.

FIG. 3 shows an equivalent circuit of the high-frequency switch Z2. In FIG. 3, capacitors C1 to C18 are:
Inside the multilayer substrate T1, the above-mentioned capacitor electrodes 66, 70, 81 and 85, 83 and 87, 72, 69, 6
7, 33, 38, 41, 49, 52, 57 and 60, 34
38, 42, 49, 53, 57, 61, 36, 40, 44, 51, 55, 59, 63, 37, 40, 45, 5
1 and 56 and 59 and 64, 68, 31, 32, 82 and 8
6, 71, 43 and 62, 35, 39, 50 and 54. Also, the strip lines S1 to S9 are also provided inside the multilayer substrate T1 respectively.
4,75,76,77,78,79,47,46,48
Is formed. In the present embodiment, the resistors R1 to R8 are formed outside the above-described multilayer substrate T1, but may be formed as chip resistors or printed resistors on the surface or inside the multilayer substrate T1.

Hereinafter, with reference to FIG.
Will be described. The first port P1 is connected to the second port P2 via a series circuit of a capacitor C7, a stripline S1 as a first distributed constant line, and a capacitor C8. The connection point between the capacitor C7 and the strip line S1 is connected to the cathode of the first diode D1, and the anode of the first diode D1 is connected to the ground via the capacitor C1.
It is connected to the first control terminal V1 via the first resistor R1. On the other hand, the anode of the first diode D1
A resistor R2 is connected in parallel between the cathodes. further,
The connection point between the strip line S1 and the capacitor C8 is connected to ground via a series circuit of the strip line S2 and the capacitor C2, which is a second distributed constant line, and the connection point between the strip line S2 and the capacitor C2 is a second connection point. Control terminal V2 is connected.

The second port P2 is connected to a capacitor C
9 is connected to the anode of the second diode D2, and the connection point of the capacitor C9 and the second diode D2 is connected to the ground via a series circuit of a strip line S3 as a third distributed constant line and a capacitor C3. Connected. Further, the cathode of the second diode D2 is connected to the third port P3 via the capacitor C16, and is connected to the anode of the third diode D3,
Further, a strip line S7 which is a seventh distributed constant line
And a capacitor 15 connected to the ground via a series circuit. Also, the strip line S7 and the capacitor 15
Is connected to the fourth control terminal V4. On the other hand, a resistor R3, a series circuit of a strip line S8 and a capacitor C17, and a capacitor C13 are connected in parallel between the anode and the cathode of the second diode D2.

The cathode of the third diode D3 is connected to the fourth port P4 via the capacitor C10, and the cathode of the third diode D3 and the capacitor C3 are connected to each other.
The connection point 10 is connected to the ground via a series circuit of a strip line S4 as a fourth distributed constant line and a capacitor C4. On the other hand, between the anode and the cathode of the third diode D3, a resistor R4, a series circuit of a strip line S9 and a capacitor C18, and a capacitor C
14 are connected in parallel with each other.

The connection point between the strip line S3 and the capacitor C3 and the connection point between the strip line S4 and the capacitor C4 are connected by a series circuit of a first resistor R7 and a second resistor R8. And the second resistor R8
Is connected to the third control terminal V3.

The fourth port P4 is connected to a capacitor C
11 and a strip line S6 as a sixth distributed constant line
Port P through a series circuit of
5 is connected. The connection point between the capacitor C11 and the strip line S6 is connected to ground via a series circuit of a strip line S5 and a capacitor C5, which is a fifth distributed constant line, and the connection point between the strip line S5 and the capacitor C5 is: The fifth control terminal V5 is connected. Further, the connection point between the strip line S6 and the capacitor C12 is connected to the cathode of the fourth diode D4, and the anode of the fourth diode D4 is connected to the ground via the capacitor C6 and the fourth resistor R5 To the sixth control terminal V6. On the other hand, a resistor R6 is connected in parallel between the anode and the cathode of the fourth diode D4 to form a high-frequency switch Z2.

The capacitors C1 to C7, C12, C
15, C16 are first to fifth control terminals V1 to V1.
The current flowing by the control voltage applied to V5 is
The current path is limited so as to flow only to the circuit including the fourth diodes D1 to D4 so as not to affect other parts.

Each of the strip lines S1 to S7 is a 90 ° phase shifter or a high impedance line having a length equal to or less than １ ／ of the wavelength of the signal at the target frequency. Also, the first to fourth resistors R7, R8, R1, R5
Is for flowing a constant current through the first to fourth diodes D1 to D4.

Next, the operation of the high-frequency switch Z2 will be described with reference to an embodiment. In the embodiments described below, the first receiving circuit RX1 is connected to the first port P1, the first antenna ANT1 is connected to the second port P2, and the transmitting circuit TX is connected to the third port P2. Connect to P3, second
Antenna ANT2 is connected to the fourth port P4,
Is connected to the fifth port P5.

First, when transmitting from the transmitting circuit TX using the first antenna ANT1, a positive control voltage is applied to the first and third control terminals V1 and V3, and the second and fourth control terminals V1 and V3 are applied.
Are connected to the ground.
Alternatively, the first and third control terminals V1 and V3 are connected to the ground, and the second and fourth control terminals V2 and V3 are connected.
4, a negative control voltage is applied. This control voltage is:
The first and second diodes D1 and D2 have a forward bias voltage, and the third diode D3 has a reverse bias voltage.
1, D2 is turned on and the third diode D3 is turned off.

Therefore, a transmission signal flows between the third port P3 and the second port P2 (between the transmission circuit TX and the first antenna ANT1), and the third port P3 and the fourth port P4
(Between the transmission circuit TX and the second antenna ANT2) and between the third port P3 and the fifth port P5 (the transmission circuit TX
No transmission signal flows between the second reception circuit RX2 and the second reception circuit RX2).

The strip line S1 is connected to the ground by the first diode D1 and the capacitor C1, resonates at the transmission frequency from the transmission circuit TX, and its impedance becomes almost infinite, so that the third port P3
The signal from the (transmitting circuit TX) is hardly transmitted to the first port P1 (the first receiving circuit RX1). Further, the strip lines S2, S3, and S7 are also connected to the ground by the capacitors C2, C3, and C15, resonate at the transmission frequency from the transmission circuit TX, and have almost infinite impedance. There is no leakage.

Next, when transmitting from the transmitting circuit TX using the second antenna ANT2, a positive control voltage is applied to the fourth and sixth control terminals V4 and V6, and the third and fifth control terminals V4 and V6 are applied.
Are connected to the ground.
Alternatively, the fourth and sixth control terminals V4 and V6 are connected to the ground, and the third and fifth control terminals V3 and V6 are connected.
5 is applied with a negative control voltage. This control voltage is the third,
Since the fourth diode D3 and D4 have a forward bias voltage and the second diode D2 has a reverse bias voltage, the third and fourth diodes D3 and D4 have a reverse bias voltage.
3, D4 is turned on and the second diode D2 is turned off.

Therefore, a transmission signal flows between the third port P3 and the fourth port P4 (between the transmission circuit TX and the second antenna ANT2), and the third port P3 and the first port P1
A transmission signal does not flow between the transmission circuit TX and the first reception circuit RX1 and between the third port P3 and the second port P2 (between the transmission circuit TX and the first antenna ANT1).

The strip line S6 is connected to the ground by the fourth diode D4 and the capacitor C6, resonates at the transmission frequency from the transmission circuit TX, and its impedance becomes almost infinite, so that the third port P3
The signal from the (transmitting circuit TX) is hardly transmitted to the fifth port P5 (the second receiving circuit RX2). Further, the strip lines S4, S5, and S7 are also connected to the ground by the capacitors C4, C5, and C15, resonate at the transmission frequency from the transmission circuit TX, and have an almost infinite impedance. There is no leakage.

Next, when reception is performed by the first reception circuit RX1 using the first antenna ANT1, a positive control voltage is applied to the second and fourth control terminals V2 and V4, and the first and third control terminals V2 and V4 are applied. Are connected to the ground. Or, the second and fourth control terminals V2, V
4 is connected to ground, and a negative control voltage is applied to the first and third control terminals V1 and V3. This control voltage becomes a bias voltage in the reverse direction with respect to the first and second diodes D1 and D2.
1 and D2 are turned off.

Therefore, between the second port P2 and the first port P1 (the first antenna ANT1 and the first receiving circuit RX
1), the second port P2 (the first antenna ANT1) and the ground via the diode D1 and the capacitor C1, the second port P2 and the third port P
3 (between the first antenna ANT1 and the transmitting circuit TX) and between the second port P2 and the fifth port P5 (between the first antenna ANT1 and the second receiving circuit RX2). . Also, the strip lines S2 and S3 are connected to the ground by the capacitors C2 and C3, resonate at the reception frequency from the first antenna ANT1, and have an almost infinite impedance, so that the reception signal leaks to the ground side. Never.

Next, when the signal is received by the second receiving circuit RX2 using the second antenna ANT2, a positive control voltage is applied to the third and fifth control terminals V3 and V5, and the fourth and sixth control terminals V3 and V5 are applied. Are connected to the ground. Or, the third and fifth control terminals V3 and V
5 is connected to the ground, and a negative control voltage is applied to the fourth and sixth control terminals V4 and V6. This control voltage becomes a bias voltage in the reverse direction with respect to the third and fourth diodes D3 and D4.
3, D4 is turned off.

Therefore, between the fourth port P4 and the fifth port P5 (the second antenna ANT2 and the second receiving circuit RX
2) between the fourth port P4 (the second antenna ANT2) and the ground via the fourth diode D4 and the capacitor C6, and between the fourth port P4 and the third port P3 (the fourth port P3). 2 antenna ANT2 and transmission circuit TX
Between the fourth port P4 and the second port P2 (no received signal flows between the second antenna ANT2 and the first receiving circuit RX1. Also, the strip lines S4 and S5)
Is connected to the ground by the capacitors C4 and C5, resonates at the reception frequency from the second antenna ANT2, and its impedance becomes almost infinite, so that the reception signal does not leak to the ground side.

In the operation of the high-frequency switch Z2 described above, the transmission circuit TX using the first antenna ANT1
, And reception by the second receiving circuit RX2 using the second antenna ANT2, a positive control voltage is applied to the first, third, and fifth control terminals V1, V3, and V5.
Second, fourth, and sixth control terminals V2, V4, V6
Is connected to ground, or the first, third, fifth
Control terminals V1, V3, and V5 are connected to ground, and second, fourth, and sixth control terminals V2, V4,
By applying a negative control voltage to V6, they can be performed simultaneously.

The transmission from the transmission circuit TX using the second antenna ANT2 and the reception by the first reception circuit RX1 using the first antenna ANT1 are also performed by the second, fourth, and sixth control circuits. A positive control voltage is applied to terminals V2, V4, and V6, and first, third, and fifth control terminals V1,
V3 and V5 are connected to ground, or
The fourth and sixth control terminals V2, V4 and V6 are connected to ground, and the first, third and fifth control terminals V
By applying a negative control voltage to 1, V3 and V5,
It is possible to do it at the same time.

Further, the third port P3 side (transmission circuit TX)
From the side of the first port P1 (first receiving circuit R)
X1 direction) and the fifth port P5 direction (second receiving circuit R
The symmetry of the circuit in the (X2 direction) is ensured, and the characteristics do not change depending on the switching direction.

The polarity of the second diode D2 and the polarity of the third diode D3 can be reversed in addition to the direction shown in FIG. In this case, the polarity of the control voltage applied to the third and fourth control terminals V3 and V4 and the second, third and fourth ports P2, P3 and P4
Is reversed.

Here, the resistances R2 to R4, R6 are
The charge accumulated in the capacitance when the fourth diodes D1 to D4 are turned off is discharged to the resistors R2 to R4 and R6 at the same time when the first to fourth diodes D1 to D4 are turned on. This is for smoothly performing the switching operation from off to on of the fourth diodes D1 to D4.

The series circuit of the strip line S8 and the capacitor C17, and the capacitor C13 are composed of a combined capacitance of the capacitance when the second diode D2 is off and the capacitor C13, an inductance component of the strip line S8, Form a parallel resonance circuit. Then, by matching the resonance frequency with the frequency of the signal, the off-state impedance of the second diode D2 is increased,
This is to improve the isolation between the first antenna ANT1 and the transmission circuit TX. Similarly, a series circuit of the strip line S9 and the capacitor C18 and the capacitor C14 are in parallel with the combined capacitance of the off-state capacitance of the third diode D3 and the capacitor C14 and the inductance component of the strip line S9. Form a resonance circuit. Then, by matching the resonance frequency with the frequency of the signal, the impedance when the third diode D3 is turned off is increased, and the transmission circuit TX and the second antenna A
This is to improve the isolation from NT2.
Here, the capacitors C17 and C18 are for preventing the current from being bypassed by the strip lines S8 and S9, and the capacitors C13 and C14 add a capacitance to the parallel resonance circuit to provide a desired resonance frequency. To gain.

The high-frequency switch Z2 thus configured
, The power source of the control voltage applied to the first to sixth control terminals V1 to V6 can be constituted by a single positive or negative power source. Further, the control voltage for turning on the diode is smaller than the control voltage for turning on the GaAs semiconductor switch.

[0048]

As described above, according to the high-frequency switch of the present invention, since each element is formed in a multilayer structure on a multilayer substrate formed by laminating a plurality of dielectric layers. Can be a chip high frequency switch,
Lower costs. Further, since element values such as stray capacitance and stray inductance do not enter, desired characteristics can be obtained.

Also, by using four diodes and providing control terminals at six locations, switching between the connection between the first port and the second port, the connection between the first port and the third port, and The connection between the third port and the fourth port and the connection between the fourth port and the fifth port can be switched. Therefore, switching of the connection between the first antenna ANT1 and the first receiving circuit RX1, switching of the connection between the first antenna ANT1 and the transmitting circuit TX, and switching of the connection between the second antenna ANT2 and the second receiving circuit RX2. It is possible to cope with diversity transmission / reception switching in which switching and switching of the connection between the second antenna ANT2 and the transmission circuit TX are performed.

Further, since the ground side of the third distributed constant line and the ground side of the fourth distributed constant line are connected via a resistor, it can be driven by a single positive or negative power supply. Therefore, the circuit arrangement can be simplified.

Also, since it can be a one-chip high-frequency switch and can be driven by a single positive or negative power supply, the whole is higher than a conventional high-frequency switch using a pin diode switch or a GaAs semiconductor switch. Can be reduced in size. Therefore, it is possible to meet the demand for mobile communication devices and the like, which are expected to be further downsized in the future.

Further, since the control voltage for turning on the diode is smaller than the control voltage for turning on the GaAs semiconductor switch, the current consumption is lower than that of the high-frequency switch using the GaAs semiconductor switch. Can be lower.

Further, by simultaneously designing each element to form a high-frequency switch, it is possible to perform a design with impedance matching. Therefore, an impedance matching circuit can be made unnecessary.

Further, by connecting a resistor in parallel between the anode and the cathode of the diode, the switching operation from off to on of the diode can be performed smoothly.

Further, a series circuit of a distributed constant line and a capacitor and another capacitor are connected in parallel between the anode and the cathode of the diode, and a combined static capacitance of the diode when it is off and another capacitor is connected. Improving the isolation between the second port and the third port and between the third port and the fourth port by configuring a parallel resonance circuit with the capacitance and the inductance component of the distributed constant line. Can be.

[Brief description of the drawings]

FIG. 1 is a perspective view of a high-frequency switch according to an embodiment of the present invention.

FIG. 2 is an exploded perspective view of a high-frequency switch according to an embodiment of the present invention.

FIG. 3 is a circuit configuration diagram of a high-frequency switch according to an embodiment of the present invention.

FIG. 4 is a schematic configuration diagram of a conventional high-frequency switch.

[Explanation of symbols]

Z2 high-frequency switch T1 multilayer substrate 1-22 dielectric layer D1-D4 diode 31-45,49-64,66-72,81-83,8
5-87 Capacitor electrode 46-48, 74-79 Strip line electrode C1-C18 Capacitor S1-S7 Strip line R1-R8 Resistance P1-P5 Port V1-V6 Control terminal

──────────────────────────────────────────────────の Continued on front page (72) Inventor Koji Furuya 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Inventor Norio Nakajima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto No. Co., Ltd. Murata Manufacturing Co., Ltd. in the examiner Keiji Shinkawa (56) reference Patent flat 6-237101 (JP, a) JP flat 6-197040 (JP, a) (58 ) investigated the field (Int.Cl. ⁷ H01P 1/15 H04B 1/18 H04B 1/44

Claims (6)

(57) [Claims] 1. A switch having five ports and four diodes, switching connection between the first port and the second port, switching connection between the second port and the third port, and The switching between the third port and the fourth port and the switching between the fourth port and the fifth port are performed between the first port and the ground. One diode, the second diode between the second port and the third port, the third diode between the third port and the fourth port, A high-frequency switch in which the fourth diode is connected between a fifth port and a ground, wherein the fifth diode is provided on an outer surface of a multilayer substrate formed by stacking a plurality of dielectric layers.
Forming one port and mounting the diode, forming a signal line connected to the ground electrode, the five ports and the diode on at least the outer surface of the multilayer substrate or on the dielectric layer, A high-frequency switch, wherein a distributed constant line connected between the signal line and the ground electrode is formed on the same plane, and a bias voltage is applied to the diode via the distributed constant line. 2. The first port is connected to a cathode of a first diode, the anode is connected to ground, and a second diode is connected between the second port and the third port. A third diode is connected to the second diode in a forward direction between the third port and the fourth port, a cathode of the fourth diode is connected to the fifth port, and an anode is grounded. A first distributed constant line is connected between the first port and the second port, and a connection point between the first distributed constant line and the second port is connected to a ground. A second distributed constant line is connected therebetween, and a third distributed constant line is connected between a connection point of the second port and the second diode and ground, and a third distributed constant line is connected to the third diode. Between the connection point of the fourth port and ground, a fourth Connect the cloth constant line, between said fourth port and said fifth port, a sixth
And a fifth distributed constant line is connected between a connection point of the sixth distributed constant line and the fourth port and the ground, and the second diode and the third distributed line are connected to each other. A seventh distributed constant line is connected between a connection point of the diode and the ground, and a first distributed constant line is connected between the ground side of the third distributed constant line and the ground side of the fourth distributed constant line. A first control terminal is connected to the ground side of the first diode via a third resistor, and a ground side of the second distributed constant line is connected. , A third control terminal is connected to a connection point between the first resistor and the second resistor, and a fourth control terminal is connected to the ground side of the seventh distributed constant line. Connect the
The fifth control terminal is connected to the ground side of the fifth distributed constant line, and the fourth control terminal is connected to the ground side of the fourth diode.
The high frequency switch according to claim 1, wherein the sixth control terminal is connected via the resistor. 3. The high-frequency switch according to claim 2, wherein fifth to eighth resistors are connected in parallel to said first to fourth diodes, respectively. 4. An eighth circuit in parallel with the second diode.
And a series circuit of a ninth distributed constant line and a second capacitor is connected in parallel with the third diode, and the second and third series are connected. The high-frequency switch according to claim 2, wherein a parallel resonance circuit is formed by the respective capacitances of the diodes when they are off and the respective inductance components of the eighth and ninth distributed constant lines. . 5. An eighth circuit in parallel with the second diode.
The series circuit of the distributed constant line and the first capacitor and the third capacitor are connected in parallel with each other, and the series circuit of the ninth distributed constant line and the second capacitor and the third circuit are connected in parallel with the third diode. 4 are connected in parallel with each other, and the respective capacitances when the second and third diodes are turned off, the respective combined capacitances of the third and fourth capacitors, and the eighth and 3. The high-frequency switch according to claim 2, wherein a parallel resonance circuit is formed by the inductance components of the nine distributed constant lines. 6. The distributed constant line according to claim 1, wherein a strip line is used.
The high frequency switch according to any one of the above.