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JP3232002B2 - Wiring board - Google Patents

Wiring board

Info

Publication number
JP3232002B2
JP3232002B2 JP19927496A JP19927496A JP3232002B2 JP 3232002 B2 JP3232002 B2 JP 3232002B2 JP 19927496 A JP19927496 A JP 19927496A JP 19927496 A JP19927496 A JP 19927496A JP 3232002 B2 JP3232002 B2 JP 3232002B2
Authority
JP
Japan
Prior art keywords
layer
ground electrode
electrode layer
wiring
wiring board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP19927496A
Other languages
Japanese (ja)
Other versions
JPH1051085A (en
Inventor
昭彦 西本
幸洋 平松
桂 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP19927496A priority Critical patent/JP3232002B2/en
Publication of JPH1051085A publication Critical patent/JPH1051085A/en
Application granted granted Critical
Publication of JP3232002B2 publication Critical patent/JP3232002B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676Single layer compositions

Landscapes

  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、例えば、半導体素
子収納用パッケージなどに適した、配線回路層とグラン
ド電極層とを具備する、反りや積層不良のない配線基板
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board suitable for, for example, a package for accommodating a semiconductor element and having a wiring circuit layer and a ground electrode layer and free from warpage and lamination failure.

【0002】[0002]

【従来技術】従来より、配線基板、例えば、半導体素子
を収納するパッケージに使用される多層配線基板とし
て、高密度の配線が可能なセラミック多層配線基板が多
用されている。この多層セラミック配線基板は、アルミ
ナなどの絶縁基板と、その表面に形成されたWやMo等
の高融点金属からなる配線導体とから構成されるもの
で、この絶縁基板の一部に凹部が形成され、この凹部内
に半導体素子が収納され、蓋体によって凹部を気密に封
止されるものである。
2. Description of the Related Art Conventionally, a ceramic multilayer wiring board capable of high-density wiring has been frequently used as a wiring board, for example, a multilayer wiring board used for a package for housing a semiconductor element. This multilayer ceramic wiring board is composed of an insulating substrate such as alumina and a wiring conductor made of a high melting point metal such as W or Mo formed on the surface thereof, and a concave portion is formed in a part of the insulating substrate. The semiconductor element is housed in the recess, and the recess is hermetically sealed by the lid.

【0003】ところが、このようなセラミック配線基板
の絶縁基板を構成するセラミックスは、硬くて脆い性質
を有することから、製造工程または搬送工程において、
セラミックスの欠けや割れ等が発生しやすく、半導体素
子の気密封止性が損なわれることがあるために歩留りが
低い等の問題があった。
[0003] However, since the ceramics constituting the insulating substrate of such a ceramic wiring board has a hard and brittle property, it is difficult to use the ceramics in a manufacturing process or a transporting process.
Chipping or cracking of the ceramic is liable to occur, and the hermetic sealing of the semiconductor element may be impaired, so that the yield is low.

【0004】また、セラミック配線基板においては、焼
結前のグリーンシートにメタライズインクを印刷して、
印刷後のシートを積層して焼結させて製造されるが、そ
の製造工程において、高温での焼成により焼成収縮が生
じるために、得られる基板に反り等の変形や寸法のばら
つき等が発生しやすいという問題があり、回路基板の超
高密度化やフリップチップ等のような基板の平坦度の厳
しい要求に対して、十分に対応できないという問題があ
った。
On a ceramic wiring board, metallized ink is printed on a green sheet before sintering.
It is manufactured by laminating and sintering the printed sheets, but in the manufacturing process, firing at high temperature causes firing shrinkage, resulting in deformation such as warpage and dimensional variation in the obtained substrate. There is a problem that it is not easy to cope with the strict requirement of the flatness of the substrate such as the ultra-high density of the circuit substrate and the flip chip.

【0005】そこで、最近では、プリント基板では銅箔
を接着した基板表面にエッチング法により微細な回路を
形成し、しかるのちにこの基板を積層して多層化した基
板も提案されている。また、このようなプリント基板に
おいては、その強度を高めるために、有機樹脂に対し
て、球状あるいは繊維状の無機質フィラーを分散させた
基板も提案されており、これらの複合材料からなる絶縁
基板上に多数の半導体素子を搭載したマルチチップモジ
ュール(MCM)等への適用も検討されている。
Therefore, recently, a printed circuit board has been proposed in which a fine circuit is formed by etching on the surface of a board to which a copper foil is adhered, and then the boards are laminated to form a multilayer. In order to increase the strength of such a printed circuit board, a substrate in which a spherical or fibrous inorganic filler is dispersed in an organic resin has been proposed. Application to a multi-chip module (MCM) or the like in which a large number of semiconductor elements are mounted is also being studied.

【0006】[0006]

【発明が解決しようとする課題】ところが、上記のよう
に例えば熱硬化性有機樹脂を含む絶縁基板を用いて多層
配線基板を作製する場合、配線層には、図1に示すよう
に、絶縁基板1の表面または内部に電気信号の伝達する
ための配線回路層2と他に、絶縁基板1のうちの少なく
と1層の全面にグランド(接地)電極層3を形成する場
合があるが、このグランド電極層3を配線回路層2と同
様に金属箔等の緻密な金属を用いて形成すると、配線回
路層2やグランド電極層3が形成された絶縁基板1を複
数層積層した後、最終的に絶縁基板1を熱硬化させる場
合、絶縁基板1中に含まれる揮発成分によって、基板1
の反りや配線回路層2と絶縁基板1との界面や絶縁基板
1との間にフクレ等が発生するという問題があった。
However, when a multilayer wiring board is manufactured using an insulating board containing a thermosetting organic resin as described above, for example, as shown in FIG. In some cases, a ground (ground) electrode layer 3 is formed on at least one entire surface of the insulating substrate 1 in addition to the wiring circuit layer 2 for transmitting an electric signal to the surface or inside of the substrate 1. When the ground electrode layer 3 is formed using a dense metal such as a metal foil in the same manner as the wiring circuit layer 2, a plurality of insulating substrates 1 on which the wiring circuit layer 2 and the ground electrode layer 3 are formed are laminated, and finally, When the insulating substrate 1 is heat-cured, the volatile components contained in the insulating substrate 1 cause the substrate 1 to harden.
There is a problem that warpage occurs and blisters or the like are generated between an interface between the wiring circuit layer 2 and the insulating substrate 1 and between the insulating substrate 1 and the like.

【0007】このような問題は、多層配線基板や半導体
素子収納用パッケージなどの高密度化が要求され、実装
形態もワイヤーボンデイングからフリップチップのよう
な表面実装へと変化する傾向にあり、それに伴い、配線
基板の反りがなく、従来よりも高い平坦度が要求される
現在、これらの要求を満足ならしめる上で、大きな障害
となっていた。
[0007] Such a problem is required to increase the density of a multilayer wiring board or a package for accommodating a semiconductor element, and the mounting form tends to change from wire bonding to surface mounting such as flip chip. At present, there is no need to warp the wiring board and a higher flatness than before is required, which has been a major obstacle in satisfying these requirements.

【0008】[0008]

【課題を解決するための手段】本発明者らは、上記のよ
うな課題について鋭意検討した結果、少なくとも有機樹
脂を含む絶縁基板と、低抵抗金属からなる配線回路層及
びグランド電極層とを具備した配線基板において、前記
配線回路層を緻密質体から形成し、グランド電極層をポ
ーラス質体から形成し、とりわけ、前記配線回路層を相
対密度90%以上の金属箔によって形成し、前記グラン
ド電極層を相対密度60〜90%の低抵抗金属を含有す
る導体によって形成する。つまり、グランド電極層を上
記ポーラス質体により構成することによって、絶縁基板
中の熱硬化性樹脂を熱硬化させる時に絶縁基板中に含ま
れる揮発成分が揮発しても、ポーラスなグランド電極層
の気孔を通じて、揮発成分を効果的に系外に放出するこ
とができるために、揮発成分の残存による基板の反りや
導体層と絶縁層及び絶縁層間のフクレを防止することが
でき、今後の回路の超微細化、精密化の要求に応えさら
にフリップチップ等の表面実装に適した配線基板が得ら
れる。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies on the above-mentioned problems, and as a result, have provided an insulating substrate containing at least an organic resin, a wiring circuit layer made of a low-resistance metal, and a ground electrode layer. The wiring circuit layer is formed of a dense body, the ground electrode layer is formed of a porous body, and particularly, the wiring circuit layer is formed of a metal foil having a relative density of 90% or more. The layer is formed by a conductor containing a low resistance metal having a relative density of 60 to 90%. In other words, by forming the ground electrode layer from the porous material, even if a volatile component contained in the insulating substrate is volatilized when the thermosetting resin in the insulating substrate is thermally cured, the pores of the porous ground electrode layer can be removed. Can effectively release volatile components to the outside of the system, thereby preventing warpage of the substrate due to residual volatile components and blistering between the conductor layer and the insulating layer and between the insulating layers. A wiring board suitable for surface mounting such as a flip chip, which meets the demand for miniaturization and precision, can be obtained.

【0009】[0009]

【発明の実施の形態】本発明の配線基板は、図1に示さ
れるように、絶縁基板1と、その表面及び/または内部
に配線回路層2およびグランド電極層3が形成されてい
る。また、配線回路層2とグランド電極層3は、スルー
ホール4によって電気的に接続されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a wiring board according to the present invention has an insulating substrate 1, and a wiring circuit layer 2 and a ground electrode layer 3 formed on the surface and / or inside thereof. Further, the wiring circuit layer 2 and the ground electrode layer 3 are electrically connected by the through holes 4.

【0010】上記の構成において、絶縁基板1は、少な
くとも有機樹脂を含むもので、望ましくは、有機樹脂と
無機フィラーとの混合物からなり、無機フィラーは有機
樹脂中に50〜80体積%の割合で均一に分散される。
In the above structure, the insulating substrate 1 contains at least an organic resin, and preferably comprises a mixture of an organic resin and an inorganic filler, and the inorganic filler is contained in the organic resin at a ratio of 50 to 80% by volume. Dispersed uniformly.

【0011】この絶縁基板を構成する無機質フィラーと
しては、SiO2 、Al2 3 、ZrO2 、TiO2
AlN、BaTiO3 、SrTiO3 、ゼオライト、C
aTiO3 、ほう酸アルミニウム等の公知の材料が使用
できる。フィラーの形状は平均粒径が20μm以下、特
に10μm以下、最適には7μm以下の略球形状の粉末
の他、平均アスペクト比が2以上、特に5以上の繊維状
のものや、織布物も使用できる。
As the inorganic filler constituting the insulating substrate, SiO 2 , Al 2 O 3 , ZrO 2 , TiO 2 ,
AlN, BaTiO 3 , SrTiO 3 , zeolite, C
Known materials such as aTiO 3 and aluminum borate can be used. The filler may be in the form of a substantially spherical powder having an average particle diameter of 20 μm or less, particularly 10 μm or less, optimally 7 μm or less, or a fibrous or woven fabric having an average aspect ratio of 2 or more, particularly 5 or more. Can be used.

【0012】一方、無機質フィラーが分散される有機樹
脂としては、PPE(ポリフェニレンエーテル)、BT
レジン(ビスマレイミドトリアジン)、エポキシ樹脂、
ポリイミド樹脂、フッ素樹脂、フェノール樹脂等の樹脂
からなり、とりわけ原料として室温で液体の熱硬化性樹
脂であることが望ましい。
On the other hand, as the organic resin in which the inorganic filler is dispersed, PPE (polyphenylene ether), BT
Resin (bismaleimide triazine), epoxy resin,
It is made of a resin such as a polyimide resin, a fluororesin, and a phenol resin, and it is particularly preferable that the raw material is a thermosetting resin that is liquid at room temperature.

【0013】このような絶縁基板1は、無機質フィラー
粉末と、粉末または液状の有機樹脂に加え、所定の割合
で混練機(ニーダ)や3本ロールなどの混練機等の手段
によって十分に混合した後、圧延法、押し出し法、ドク
ターブレード法、射出成形法など周知の樹脂成形方法に
より、シート状に成形することにより絶縁基板が得られ
る。但し、シート成形時の絶縁基板は、多層化にあた
り、他の絶縁基板や導体層との積層処理を行う上で、半
硬化の状態であることが望ましく、半硬化には、有機樹
脂が熱可塑性樹脂の場合には、加熱下で混合したものを
冷却し、熱硬化性樹脂の場合には、完全固化するに十分
な温度よりもやや低い温度に加熱すればよい。
The insulating substrate 1 is sufficiently mixed with the inorganic filler powder and the powder or liquid organic resin at a predetermined ratio by means of a kneading machine (kneader) or a kneading machine such as a three-roll machine. Thereafter, the insulating substrate is obtained by forming the sheet into a sheet by a known resin molding method such as a rolling method, an extrusion method, a doctor blade method, and an injection molding method. However, the insulating substrate at the time of forming the sheet is desirably in a semi-cured state in order to perform a lamination process with another insulating substrate or a conductor layer in order to form a multilayer, and the organic resin is made of a thermoplastic resin for the semi-curing. In the case of a resin, the mixture may be cooled under heating, and in the case of a thermosetting resin, the mixture may be heated to a temperature slightly lower than a temperature sufficient for complete solidification.

【0014】この絶縁基板1の表面および内部には、低
抵抗金属によって配線回路層2やグランド電極層3、あ
るいはスルーホールを形成する。低抵抗金属としては、
銅、銀、アルミニウム、金より選ばれる少なくとも一種
を含むものが良好に使用できるが、Pb−Sn合金やN
i−Cr合金とも合わせて使うことができる。
On the surface and inside of the insulating substrate 1, a wiring circuit layer 2, a ground electrode layer 3, or a through hole is formed with a low-resistance metal. As a low resistance metal,
Those containing at least one selected from copper, silver, aluminum and gold can be used favorably, but Pb-Sn alloy and N
It can be used together with i-Cr alloy.

【0015】本発明によれば、絶縁基板1に形成する配
線回路層2を緻密質体により、グランド電極層3を前記
配線回路層2よりも気孔の多いポーラス質体から形成す
ることが大きな特徴である。具体的には、配線回路層の
相対密度は90%以上、グランド電極層の相対密度は6
0〜90%であり、望ましくは配線回路層の相対密度は
93%以上、グランド電極層の相対密度は70〜85%
であるのが良い。
According to the present invention, the wiring circuit layer 2 formed on the insulating substrate 1 is formed of a dense body, and the ground electrode layer 3 is formed of a porous body having more pores than the wiring circuit layer 2. It is. Specifically, the relative density of the wiring circuit layer is 90% or more, and the relative density of the ground electrode layer is 6%.
0 to 90%, preferably the relative density of the wiring circuit layer is 93% or more, and the relative density of the ground electrode layer is 70 to 85%.
It is good.

【0016】これは、配線回路層の相対密度が90%よ
り低いと、微細配線とした時、抵抗率が上昇し導体損失
が大きくなるためである。また、グランド電極層の相対
密度が60%より低いと、導体の抵抗率が高くなるとと
もに製品としたときの信頼性を損ない、また、相対密度
が90%より高いと、基板を積層硬化して配線基板とし
た時、有機樹脂に含まれる揮発成分による反りが生じた
り、導体層と絶縁基板界面や絶縁基板間にフクレが発生
しやすくなるためである。
This is because, when the relative density of the wiring circuit layer is lower than 90%, when a fine wiring is formed, the resistivity increases and the conductor loss increases. If the relative density of the ground electrode layer is lower than 60%, the resistivity of the conductor is increased and the reliability of the product is impaired. If the relative density is higher than 90%, the substrate is laminated and hardened. This is because, when the wiring substrate is used, warping due to volatile components contained in the organic resin occurs, and blisters are easily generated between the conductor layer and the insulating substrate interface or between the insulating substrates.

【0017】上記の緻密質の配線回路層は、例えば、絶
縁基板の表面に、銅、アルミニウム、金、銀から選ばれ
る少なくとも1種を含む低抵抗金属の箔を樹脂フィルム
等の絶縁層に接着剤で貼りつけた後に、回路パターンの
レジストを形成して酸等によって不要な部分の金属をエ
ッチング除去して配線回路層を形成し、これを絶縁基板
に転写するか、予め打ち抜きした金属箔を貼りつける方
法がある。この金属箔を用いた方法は、微細配線とした
時の低抵抗化や信頼性の点で低抵抗金属粉末を含む導体
ペーストをスクリーン印刷やフォトレジスト法によって
回路パターンに形成するよりも有利である。
The dense wiring circuit layer is formed, for example, by bonding a low-resistance metal foil containing at least one selected from copper, aluminum, gold and silver to an insulating layer such as a resin film on the surface of an insulating substrate. After bonding with a chemical, a circuit pattern resist is formed, and unnecessary parts of the metal are removed by etching with an acid or the like to form a wiring circuit layer, which is transferred to an insulating substrate or a metal foil previously punched is used. There is a way to paste. This method using a metal foil is more advantageous than forming a conductive paste containing a low-resistance metal powder into a circuit pattern by screen printing or a photoresist method in terms of lowering resistance and reliability when forming fine wiring. .

【0018】一方、ポーラスなグランド電極層は、絶縁
基板の表面に、銅、アルミニウム、金、銀から選ばれる
少なくとも1種を含む低抵抗金属粉末を導体ペーストに
し、スクリーン印刷や、フォトレジスト法等によって電
極パターンを形成した後、乾燥して高密度の配線回路層
形成時よりも低圧力下、望ましくは70kg/cm2
下に加圧して得ることができる。その他、グランド電極
層を形成する導体ペースト中の低抵抗金属粉末の粒径を
大きくすることによってもポーラス化することができ
る。
On the other hand, a porous ground electrode layer is formed by forming a low-resistance metal powder containing at least one selected from copper, aluminum, gold, and silver into a conductive paste on the surface of an insulating substrate by screen printing, a photoresist method, or the like. After forming an electrode pattern by drying, it can be obtained by drying and pressing under a lower pressure than when a high-density wiring circuit layer is formed, preferably 70 kg / cm 2 or less. In addition, it can be made porous by increasing the particle size of the low-resistance metal powder in the conductive paste forming the ground electrode layer.

【0019】また、スルーホールを形成する場合には、
絶縁基板に打ち抜き法やレーザー加工等によりホールを
形成し、その内部に配線回路層と同様な導体ペーストを
充填するか、あるいはメッキ法により導体層を形成する
ことにより作製される。
When a through hole is formed,
A hole is formed in an insulating substrate by a punching method, laser processing, or the like, and the inside is filled with a conductive paste similar to the wiring circuit layer, or a conductive layer is formed by a plating method.

【0020】次に、上記のようにして作製された配線回
路層やグランド電極層が形成された複数の絶縁基板を位
置合わせして絶縁層を積層し加熱しながら圧着して、絶
縁層の有機樹脂を完全に硬化させることにより図1に示
したような配線基板を得ることができる。
Next, the plurality of insulating substrates on which the wiring circuit layer and the ground electrode layer formed as described above are formed are aligned, the insulating layers are stacked, and pressed under heating to form an organic insulating layer. By completely curing the resin, a wiring board as shown in FIG. 1 can be obtained.

【0021】[0021]

【実施例】本発明の配線基板を製造するために、無機フ
ィラーとして平均粒径が5μmの溶融シリカ70体積%
と、BTレジン30体積%を秤量し、これに溶媒として
BTレジンに対しては酢酸ブチル、メチルエチルケトン
を加え、さらに樹脂の硬化を促進させるための触媒を添
加し、攪拌翼が公転および自転する攪拌機により1時間
混合した後、スラリーを調製した。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to produce a wiring board of the present invention, 70% by volume of fused silica having an average particle size of 5 μm was used as an inorganic filler.
And 30% by volume of BT resin, butyl acetate and methyl ethyl ketone were added to the BT resin as a solvent, and a catalyst for accelerating the curing of the resin was added thereto. After mixing for 1 hour, a slurry was prepared.

【0022】このスラリーをドクターブレード法によ
り、厚み200μmのシート状に成形した。この絶縁シ
ートを50mm□にカットし、パンチング法によりビア
ホールを形成した。
This slurry was formed into a sheet having a thickness of 200 μm by a doctor blade method. This insulating sheet was cut into 50 mm square, and via holes were formed by punching.

【0023】配線回路層の形成方法は、以下の2つの方
法を用いた。第1の方法として、銅箔を粘着樹脂フィル
ムの粘着面に貼り合わせた後、銅箔上にフォトレジスト
インクを塗布し、フォトリソグラフィ法により樹脂フィ
ルム上に線幅50μm、回路間距離50μmの回路を形
成し、前記絶縁シート上に加圧転写した。第2の方法と
して、平均粒径が5μmの銅粉末を主成分とする導体ペ
ーストをスクリーン印刷法により線幅50μm、回路間
距離50μmの回路を形成し、表1に示す条件で圧力を
加えた。
The following two methods were used for forming the wiring circuit layer. As a first method, after bonding a copper foil to an adhesive surface of an adhesive resin film, a photoresist ink is applied on the copper foil, and a circuit having a line width of 50 μm and a circuit distance of 50 μm is formed on the resin film by a photolithography method. Was formed and transferred onto the insulating sheet under pressure. As a second method, a circuit having a line width of 50 μm and a distance between circuits of 50 μm was formed by a screen printing method using a conductive paste mainly composed of copper powder having an average particle diameter of 5 μm, and pressure was applied under the conditions shown in Table 1. .

【0024】一方、グランド電極層は、前記と同様の銅
を主成分とする導体ペーストをスクリーン印刷法により
形成し、表1に示す条件で圧力を印加した。また、比較
品として、前記と同様にして銅箔によってグランド電極
層を形成した。また、銅を主成分とする導体インクを印
刷法によりビアホールに埋め込んだ。
On the other hand, for the ground electrode layer, the same conductive paste containing copper as a main component as described above was formed by screen printing, and pressure was applied under the conditions shown in Table 1. As a comparative product, a ground electrode layer was formed of copper foil in the same manner as described above. Further, a conductive ink containing copper as a main component was embedded in the via hole by a printing method.

【0025】このようにして、配線回路層とグランド電
極層が形成された絶縁基板を8層積層し、200℃、2
時間、窒素中で樹脂を硬化し多層配線基板を得た。配線
回路層とグランド電極層のそれぞれの相対密度は、導体
の重量と寸法により算出し、それらの抵抗率は室温で四
端子法により測定し、結果を表1に示した。
In this manner, eight layers of the insulating substrate on which the wiring circuit layer and the ground electrode layer are formed are stacked,
The resin was cured in nitrogen for a time to obtain a multilayer wiring board. The relative densities of the wiring circuit layer and the ground electrode layer were calculated based on the weight and size of the conductor, and their resistivity was measured at room temperature by a four-terminal method. The results are shown in Table 1.

【0026】また、基板の反りは基板の両端を表面粗さ
計により測定し、導体層と絶縁層及び絶縁層間のフクレ
は、配線基板の断面を双眼や実体顕微鏡により観察し、
配線基板の平坦度はICチップの搭載される領域を表面
粗さ計により測定し、結果を表1に示した。
The warpage of the substrate is measured by a surface roughness meter at both ends of the substrate, and the swelling between the conductor layer, the insulating layer and the insulating layer is observed by observing the cross section of the wiring substrate with a binocular or a stereomicroscope.
The flatness of the wiring board was measured by a surface roughness meter in a region where the IC chip was mounted, and the results are shown in Table 1.

【0027】[0027]

【表1】 [Table 1]

【0028】表1によれば、配線回路層は、相対密度9
0%以上で抵抗率5×10-6Ω−cm以下、また、グラ
ンド電極層の相対密度60〜90%で、抵抗率が10-5
〜10-6Ω−cmとなり回路層および電極層としていず
れも充分な特性を有していた。また、グランド電極層を
相対密度60〜90%のポーラス質体とすることによ
り、基板の反り、平坦度とも小さくなるとともに導体層
と絶縁層及び絶縁層間のフクレも減少し、今後の実装形
態であるフリップチップ等の表面実装に適した配線基板
を得ることができた。
According to Table 1, the wiring circuit layer has a relative density of 9
The resistivity is 5 × 10 −6 Ω-cm or less at 0% or more, and the resistivity is 10 −5 at a relative density of the ground electrode layer of 60 to 90%.
It became 10 -6 Ω-cm, and both of the circuit layer and the electrode layer had sufficient characteristics. In addition, by forming the ground electrode layer as a porous body having a relative density of 60 to 90%, the warpage and flatness of the substrate are reduced, the conductor layer and the insulating layer, and blisters between the insulating layers are reduced. A wiring board suitable for surface mounting of a certain flip chip or the like was obtained.

【0029】[0029]

【発明の効果】以上詳述した通り、本発明の配線基板に
よれば、配線回路層を金属箔によって、またグランド電
極層を金属粉末を含むポーラス質体により形成すること
により、配線回路層の低抵抗化ととも、基板の反りや導
体層と絶縁層及び絶縁層間のフクレを防止することがで
き、今後の回路の微細化、精密化の要求に応えさらにフ
リップチップ等の表面実装に適した配線基板を得ること
ができる。
As described in detail above, according to the wiring board of the present invention, the wiring circuit layer is formed of a metal foil and the ground electrode layer is formed of a porous material containing metal powder, thereby forming the wiring circuit layer. Along with lower resistance, it can prevent warpage of the board and blisters between the conductor layer and the insulating layer and between the insulating layers, and it is suitable for surface mounting of flip chips etc. in response to future demands for finer and more precise circuits. A wiring board can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の配線基板の構造を説明するための概略
断面図である。
FIG. 1 is a schematic sectional view for explaining a structure of a wiring board according to the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁基板 2 配線導体層 3 グランド電極層 4 スルーホール REFERENCE SIGNS LIST 1 insulating substrate 2 wiring conductor layer 3 ground electrode layer 4 through hole

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平7−235741(JP,A) 特開 平1−251694(JP,A) 特開 平4−329207(JP,A) 特開 昭61−264796(JP,A) 特開 平3−112192(JP,A) (58)調査した分野(Int.Cl.7,DB名) H05K 1/09 H05K 1/02 H05K 3/46 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-7-235741 (JP, A) JP-A-1-251694 (JP, A) JP-A-4-329207 (JP, A) JP-A-61- 264796 (JP, A) JP-A-3-112192 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H05K 1/09 H05K 1/02 H05K 3/46

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】少なくとも有機樹脂を含む絶縁基板と、低
抵抗金属からなる配線回路層及びグランド電極層とを具
備した配線基板において、前記配線回路層が相対密度9
0%以上の金属箔からなる緻密質体からなり、前記グラ
ンド電極層が前記配線回路層よりも気孔の多い相対密度
60〜90%の低抵抗金属粉末を含有するポーラス質体
からなることを特徴とする配線基板。
1. A wiring board comprising at least an insulating substrate containing an organic resin, a wiring circuit layer made of a low-resistance metal, and a ground electrode layer, wherein the wiring circuit layer has a relative density of 9%.
The ground electrode layer is made of a dense body made of a metal foil of 0% or more, and the ground electrode layer is made of a porous body containing a low-resistance metal powder having more pores than the wiring circuit layer and a relative density of 60 to 90%. Wiring board.
JP19927496A 1996-07-29 1996-07-29 Wiring board Expired - Fee Related JP3232002B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19927496A JP3232002B2 (en) 1996-07-29 1996-07-29 Wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19927496A JP3232002B2 (en) 1996-07-29 1996-07-29 Wiring board

Publications (2)

Publication Number Publication Date
JPH1051085A JPH1051085A (en) 1998-02-20
JP3232002B2 true JP3232002B2 (en) 2001-11-26

Family

ID=16405068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19927496A Expired - Fee Related JP3232002B2 (en) 1996-07-29 1996-07-29 Wiring board

Country Status (1)

Country Link
JP (1) JP3232002B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017149966A1 (en) * 2016-03-04 2017-09-08 アルプス電気株式会社 Electronic circuit module and method for testing electronic circuit module

Also Published As

Publication number Publication date
JPH1051085A (en) 1998-02-20

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