JP3230729B2 - Electron beam apparatus, electron source and image forming apparatus using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam apparatus and an image forming apparatus such as a display apparatus to which the electron beam apparatus is applied, and more particularly to an image forming apparatus having an atmospheric pressure resistant spacer.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitting devices, a hot cathode device and a cold cathode device, are known. Among these, among the cold cathode devices, for example, a surface conduction type emission device, a field emission type device (hereinafter referred to as FE type), a metal / insulating layer / metal type emission device (hereinafter referred to as MIM type), and the like are known. I have.

[0003] As a surface conduction type emission element, for example,
MIElinson, Radio Eng. ElectronPhys., 10, 1290, (196
5) and other examples described later are known. The surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current flows in a small-area thin film formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, in addition to the use of a thin film of SnO ₂ according to the Ellingson, etc., by an Au thin film [G.Dittmer: "Thin Solid Fi
lms ", 9,317 (1972)] and, In ₂ O ₃ / SnO ₂ by thin film [M.Hartwell and CGFonstad:" IEEE Trans.ED
Conf. ", 519 (1975)] and those using carbon thin films [Hisashi Araki et al .: Vacuum, Vol. 26, No. 1, 22 (198)
3)] has been reported.

FIG. 20 shows a plan view of the above-mentioned device by M. Hartwell et al. As a typical example of the device configuration of these surface conduction electron-emitting devices. In the figure, reference numeral 3001 denotes a substrate; and 3004, a conductive thin film made of metal oxide formed by sputtering. The conductive thin film 3004 is formed in an H-shaped planar shape as shown. The conductive thin film 3
An electron emission portion 3005 is formed by performing an energization process called energization forming described below on 004. The interval L in the figure is 0.5 to 1 [mm], and W is 0.1 [m].
m]. In addition, for convenience of illustration, the electron emitting portion 3005 is shown in a rectangular shape at the center of the conductive thin film 3004, but this is a schematic one, and the position and shape of the actual electron emitting portion are faithfully represented. Not necessarily.

[0005] In the above-mentioned surface conduction type electron-emitting device including the device by M. Hartwell et al., The electron-emitting portion 3005 is formed by subjecting the conductive thin film 3004 to an energization process called energization forming before electron emission. It was common to form That is, energization forming means that a constant DC voltage is applied to both ends of the conductive thin film 3004,
Alternatively, a current is applied by applying a DC voltage which is boosted at a very slow rate of, for example, about 1 V / min, and locally destroys, deforms, or alters the conductive thin film 3004, thereby giving a high electrical resistance. Is formed. Note that a crack is generated in a part of the conductive thin film 3004 that is locally broken, deformed, or altered. After the energization forming, the conductive thin film 3004
When an appropriate voltage is applied to the above, electrons are emitted in the vicinity of the crack.

An example of the FE type is, for example, WPDyke
& W.W.Dolan, "Field emission", Advance in Electron Ph
ysics, 8, 89 (1956) or CASpindt, "Physical
properties of thin-film field emission cathodes w
ith molybdenium cones ", J. Appl. Phys., 47, 5248 (1976)
Etc. are known.

[0007] As a typical example of the FE type device configuration, FIG. 21 shows a cross-sectional view of the device by CASpindt et al. Described above.
In the figure, reference numeral 3010 denotes a substrate; 3011, an emitter wiring made of a conductive material; 3012, an emitter connector;
Reference numeral 13 denotes an insulating layer, and reference numeral 3014 denotes a gate electrode. In this element, an appropriate voltage is applied between the emitter cone 3012 and the gate electrode 3014, so that the emitter
Field emission is caused from the tip of the 012.
Further, as another element configuration of the FE type, there is an example in which an emitter and a gate electrode are arranged on a substrate almost in parallel with the substrate plane, instead of the laminated structure shown in FIG.

As an example of the MIM type, for example,
CAMead, "Operationof tunnel-emission Devices, J.Ap
pl.Phys., 32, 646 (1961). FIG. 22 shows a typical example of the MIM element configuration. The figure is a sectional view, in which 3020 is a substrate, 3021 is a lower electrode made of metal, 3022 is a thin insulating layer having a thickness of about 100 Å, and 3023 is a thin insulating layer having a thickness of about 80 to 300 Å. Upper electrode made of metal. MI
In the M-type, by applying an appropriate voltage between the upper electrode 3023 and the lower electrode 3021, electrons are emitted from the surface of the upper electrode 3023.

Since the above-mentioned cold cathode device can obtain electron emission at a lower temperature than the hot cathode device, the heating cathode
No need for tar. Therefore, the structure is simpler than that of the hot cathode element, and a fine element can be produced. Also,
Even if a large number of elements are arranged on a substrate at a high density, problems such as thermal melting of the substrate hardly occur. Also, unlike the hot cathode element, which operates by heating the heater, which has a low response speed, the cold cathode element has the advantage of a high response speed.

For this reason, research for applying the cold cathode device has been actively conducted.

For example, the surface conduction electron-emitting device has the advantage of being able to form a large number of devices over a large area because it has a particularly simple structure and is easy to manufacture among the cold cathode devices. Therefore, as disclosed in, for example, JP-A-64-31332, a method for arranging and driving a large number of elements has been studied.

As for the application of the surface conduction electron-emitting device, for example, an image forming apparatus such as an image display device and an image recording device, a charged beam source, and the like have been studied. In particular, as an application to an image display device, for example, USP 5,06
6,883 and JP-A-2-257551 and JP-A-4-24-2
As disclosed in Japanese Patent No. 8137, an image forming apparatus using a combination of a surface conduction electron-emitting device and a phosphor that emits light when irradiated with an electron beam has been studied. An image forming apparatus using a combination of a surface conduction electron-emitting device and a phosphor is expected to have better characteristics than other conventional image forming apparatuses. For example, compared to a liquid crystal display device that has become widespread in recent years, it can be said that it is superior in that it does not require a backlight because it is a self-luminous type and that it has a wide viewing angle.

A method of driving a large number of FE types in a row is disclosed, for example, in US Pat. No. 4,904,895 by the present applicant. As an example in which the FE type is applied to an image forming apparatus, for example, R. Meyer et al. [R. Meyer: "Recent
Development on Micro-tips Display at LETI ", Te
ch.Digest of 4th Int.Vacuum Microele-ctronic
s Conf., Nagahama, pp. 6-9 (1991)], and a flat panel display device reported is known.

An example in which a number of MIM types are arranged and applied to an image forming apparatus is disclosed in, for example, JP-A-3-55738.

[0015] Among the image forming apparatuses using the above-mentioned electron-emitting devices, a flat display device having a small depth has attracted attention as a replacement for a cathode-ray tube display device because of its space saving and light weight. .

FIG. 23 is a perspective view showing an example of a display panel portion forming a flat type image forming apparatus, and a part of the panel is cut away to show the internal structure.

In the figure, 3115 is a rear plate, 3116
Denotes a side wall, 3117 denotes a face plate, and a rear plate 3115, a side wall 3116, and a fuse plate 3
117 forms an envelope (airtight container) for maintaining the inside of the display panel in a vacuum.

A substrate 3111 is fixed to the rear plate 3115, and nxm cold cathode elements 3112 are formed on the substrate 3111. (N and m are positive integers of 2 or more and are appropriately set according to the target number of display pixels.) Further, the n × m cold cathode elements 311 are provided.
2 are m row-direction wirings 3113 as shown in FIG.
And N column direction wirings 3114. These substrate 3111, cold cathode element 3112, row direction wiring 3
The portion constituted by the 113 and the column direction wiring 3114 is called a multi-electron beam source. Also, the row direction wiring 31
An insulating layer (not shown) is formed between at least the portion where the column 13 and the column-directional wiring 3114 intersect, so that electrical insulation is maintained.

On the lower surface of the face plate 3117, a phosphor film 3118 made of a phosphor is formed, and phosphors (not shown) of three primary colors of red (R), green (G), and growth (B) are applied. Divided. A black body (not shown) is provided between the phosphors of the respective colors constituting the fluorescent film 3118, and a metal back 3119 made of Al or the like is formed on the surface of the fluorescent film 3118 on the rear plate 3115 side. ing.

Further, Dx1 to Dxm and Dy1 to Dy
n and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown). Dx1 to Dxm are row direction wirings 3113 of the multi electron beam source, Dy1 to Dyn are column direction wirings 3114 of the multi electron beam source, and Hv is a metal back 31.
19 are electrically connected to each other.

The inside of the airtight container is 10 ^-6 Torr.
r, and as the display area of the image forming apparatus increases, a means for preventing deformation or destruction of the rear plate 3115 and the face plate 3117 due to a pressure difference between the inside and the outside of the airtight container is required. . Rear plate 3115 and face plate 31
The method of increasing the thickness of not only increases the weight of the image forming apparatus, but also causes image distortion and parallax when viewed from an oblique direction. On the other hand, in FIG. 23, a structural support (called a spacer or a rib) 31 made of a relatively thin glass plate and supporting the atmospheric pressure is used.
20 are provided. In this way, the distance between the substrate 3111 on which the multi-beam electron source is formed and the face plate 3116 on which the fluorescent film 3118 is formed is usually kept at a sub-millimeter to several millimeters, and the inside of the airtight container is kept at a high vacuum as described above. ing.

In the image forming apparatus using the above-described display panel, when a voltage is applied to each cold cathode element 3112 through the external terminals Dx1 to Dxm and Dy1 to Dyn, electrons are emitted from each cold cathode element 3112. At the same time, a high voltage of several hundred [V] to several [kV] is applied to the metal back 3119 through the external terminal Hv to accelerate the emitted electrons and cause them to collide with the inner surface of the face plate 3117. As a result, the phosphors of each color forming the fluorescent film 3118 are excited and emit light, and an image is displayed.

[0023]

The display panel of the image forming apparatus described above has the following problems.

First, there is a possibility that a part of the electrons emitted from the vicinity of the spacer 3120 hit the spacer 3120 or the action of the emitted electrons may cause the spacer to be charged. The electrons emitted from the cold cathode element 3112 due to the charging of the spacer are bent in their trajectories, reach a position different from the normal position on the phosphor, and the image near the spacer is distorted and displayed.

Second, in order to accelerate electrons emitted from the cold cathode device 3112, a high voltage of several hundred V or more (ie, 1 kV) is applied between the multi-beam electron and the face plate 3117.
V / mm or more), the spacer 3
There is a concern about creeping discharge on the surface of the H.120. In particular, when the spacer is charged as described above, discharge may be induced.

In order to solve this problem, it has been proposed to remove the charge by making a small current flow through the spacer (Japanese Patent Application Laid-Open Nos. 57-118355 and 57-118).
1-124031). There, a high-resistance thin film is formed on the surface of an insulating spacer so that a minute current flows on the surface of the spacer. The antistatic film used here is tin oxide or a mixed crystal thin film of tin oxide and indium oxide or a metal film.

The semiconductor type thin film such as tin oxide used in the above proposal is sensitive to a gas such as oxygen so that it is applied to a gas sensor, so that its resistance value is easily changed in an atmosphere. In addition, since these materials or metal films have low specific resistance, it is necessary to form them in an island shape or to make them extremely thin in order to increase the resistance. That is, the conventional high-resistance film has drawbacks in that the reproducibility of film formation is difficult, and the resistance value is easily changed in a heating process such as frit sealing or baking in a display manufacturing process.

Also, some of the electrons emitted from the vicinity of the spacer 3120 are emitted when the electrons hit the high-resistance film.
Since the amount of secondary electrons depends on the state and thickness of the high-resistance film,
When the high resistance film is formed in an island shape or formed as an extremely thin film, there is a defect that the charge is removed to the extent that the charge is removed in the plane of the high resistance film.

The present invention overcomes the above-mentioned disadvantages of the conventional spacer, and provides an image forming apparatus using a spacer antistatic film having high stability.

[0030]

The object of the present invention is achieved by an electron beam apparatus having the following configuration. That is,
An electron source having a plurality of cold cathode devices, an electrode for controlling electrons emitted from the electron source, a target for irradiating the electrons emitted from the electrons, and a target disposed between the electron source and the electrode And a spacer having a layer in which carbon is dispersed on the surface of the insulating member and having a specific resistance of 0.1 Ω · cm to 1.0 × 1.
0 ⁸ Ω · cm configuration having antistatic film made of a semi-conductive film, or the insulating Hanshirubedenmaku surface resistivity formed on the surface of 0.1~1.0 × 10 ^{8 Ω} · cm of the member Having an antistatic film in which carbon is deposited in an island shape, and further having a layer in which carbon is dispersed on the surface of the insulating member, having a specific resistance of 0.1 to 1.0 × 10 ⁸ Ω · cm. An antistatic film having an antistatic film in which carbon is deposited in an island shape on a semiconductive film, wherein the antistatic film has an antistatic film, and a contact surface with the electron source and the electrode. The object of the present invention is achieved by an electron beam apparatus having a configuration in which a conductive film is provided and the antistatic film is electrically connected to the electron source and the electrode. .

1 (a) to 1 (c) are schematic cross-sectional views of a spacer according to the present invention, wherein 1 is a base of a spacer which is an insulating member provided with antistatic properties, and 2 is a base of a base 1 of the insulating member. An antistatic film formed on the surface. The antistatic film 2 is made of island-shaped carbon 3 or dispersed carbon 4
And the semiconductive film 5.

The electron beam apparatus of the present invention may have the following form.

(1) In the electron beam apparatus, the electrode is an accelerating electrode for accelerating electrons emitted from the electron source.
An image forming apparatus forms an image by irradiating the target with electrons emitted from the cold cathode device in response to an input signal. In particular, an image forming apparatus in which the target is a phosphor is provided.

(2) The cold cathode device is a cold cathode device having a conductive thin film including an electron emitting portion between a pair of electrodes, and is particularly preferably a surface conduction electron emitting device.

(3) The electron source is a simple matrix-shaped electron source having a plurality of cold cathode devices arranged in a matrix with a plurality of row wirings and a plurality of column wirings.

(4) The electron source is provided with a plurality of rows of cold cathode elements each having a plurality of cold cathode elements arranged in parallel and connected at both ends (referred to as a row direction), and a direction perpendicular to the wiring (referred to as a row direction). A control electrode (also referred to as a grid) disposed above the cold cathode element along the column direction) forms a ladder-like electron source for controlling electrons from the cold cathode element.

(5) Further, according to the concept of the present invention, the present invention is not limited to an image forming apparatus suitable for display, but may be replaced with a light emitting diode or the like of an optical printer including a photosensitive drum and a light emitting diode. The above-described image forming apparatus can be used as a light source. In this case, by appropriately selecting the above-mentioned m row-directional wirings and n column-directional wirings, the present invention can be applied not only to a linear light emitting source but also to a two-dimensional light emitting source. In this case, the image forming member is not limited to a substance that directly emits light, such as a phosphor used in the following embodiments, and a member that forms a latent image by electron charging can also be used.

Further, according to the concept of the present invention, the present invention is applicable to a case where a member to be irradiated with electrons emitted from an electron source is other than an image forming member such as a phosphor, as in an electron microscope. Is applicable. Therefore, the present invention can also take a form as a general electron beam apparatus that does not specify a member to be irradiated.

[0039]

Embodiments of the present invention will be described below in detail with reference to the drawings.

According to the present invention, in an image forming apparatus, an electron beam apparatus and an electron source used for the same, a specific resistance in which (1) a layer in which carbon is dispersed is provided on an insulating member which is a base of a spacer for atmospheric pressure resistance. configuration but forming a Hanshirubedenmaku of 0.1 to 10 ⁸ [Omega] cm, or carbon (2) spacer substrate formed on the insulating member a specific resistance of 0.1 to 10 ⁸ [Omega] cm Hanshirubedenmaku surface Or (3) having a layer in which carbon is dispersed and having a specific resistance of 0.1 to 10 ⁸ Ωc.
The present invention relates to an antistatic film having a structure in which carbon is deposited in an island shape on a m semiconductive film.

(Description of Structure of Antistatic Film) First, a schematic diagram of an antistatic film according to the present invention will be described with reference to the drawings. FIGS. 1A to 1C are schematic cross-sectional views of an antistatic film on a spacer according to the present invention, wherein 1 is an insulating member to be subjected to antistatic, and 2 is formed on the surface of the insulating member 1. It is an antistatic film. The antistatic film 2 is composed of island-like carbon 3 or dispersed carbon 4 and a semiconductive film 5.

(Structure of Image Forming Apparatus) The present invention is a flat type image forming apparatus (electron beam apparatus) using the above antistatic film as a spacer, and its structure is schematically shown in FIG. The substrate 1011 on which a plurality of cold cathode devices 1012 are formed and a transparent face plate 1017 on which a fluorescent film 1018 as a light emitting material is formed are formed by a spacer 10.
20 is a display device having a structure opposed to each other via 20
In particular, the spacer 1020 has a structure in which an antistatic film having a layer in which carbon is dispersed and having a specific resistance of 0.1 to 10 ⁸ Ωcm is formed on the surface of the insulating member, or the specific resistance formed on the insulating member is zero. .1~10 ⁸ Ωcm configuration or deposited carbon in an island shape on Hanshirubedenmaku surface, the specific resistance of 0.1 to 10 ⁸ [Omega] cm a semiconductive film having a layer obtained by dispersing carbon carbon island-shaped The present invention relates to a display device having a stacked configuration.

In the image forming apparatus of the present invention, one side of the spacer 1020 is electrically connected to the wiring 1013 on the substrate 1011 on which the cold cathode device is formed. The opposite side is electrically connected to an acceleration electrode (metal back 1019) for causing electrons emitted from the cold cathode element to collide with a light emitting material (fluorescent film 1018) with high energy. That is, a current obtained by substantially dividing the acceleration voltage by the resistance value of the antistatic film flows through the antistatic film formed on the surface of the spacer 1020.

(Explanation of Formation of Antistatic Film) The resistance value Rs of the spacer 1020 is set to a desirable range from the viewpoint of antistatic and power consumption. The surface resistance Rs is preferably 10 ¹² Ω or less from the viewpoint of antistatic. In order to obtain a sufficient antistatic effect, the surface resistance Rs should be 10 ¹¹
Ω or less is more preferable. The lower limit of the surface resistance depends on the spacer shape and the voltage applied between the spacers.
It is preferably at least 10 ⁵ Ω.

The thickness t of the antistatic film formed on the insulating material is preferably in the range of 10 nm to 1 μm. Although it depends on the surface energy of the material, the adhesion to the substrate, and the substrate temperature, a thin film of 10 nm or less is generally formed in the shape of an island, and has an unstable resistance and poor reproducibility. On the other hand, when the film thickness t is 1 μm
Above m, the film stress increases and the risk of film peeling increases, and the film formation time increases, resulting in poor productivity. Therefore, the film thickness is desirably 50 to 500 nm.

The surface resistance Rs is ρ / t, and the specific resistance ρ of the antistatic film is preferably 0.1 to 10 ⁸ Ωcm from the preferable ranges of the surface resistance Rs and the thickness t described above. Further, in order to realize more preferable ranges of the surface resistance Rs and the film thickness t, the specific resistance ρ is preferably set to 10 ² to 10 ⁶ Ωcm. If the specific resistance ρ is smaller than this, the power consumption due to the high voltage increases, resulting in overheating, and if the specific resistance ρ is larger than this, the antistatic effect deteriorates. It is determined whether or not ρ is 10 ² to 10 ⁶ Ωcm because it is a reasonable ratio between the power consumption by the spacer and the power consumption for image display as the image forming apparatus. This is because it is determined that the range is exhibited.

As described above, the spacer 1020 is formed by a current flowing through the antistatic film formed thereon, or by generating heat during operation of the entire display.
Its temperature rises. If the temperature coefficient of resistance of the antistatic film is a large negative value, the resistance value decreases when the temperature rises,
The current flowing through the spacer 1020 increases, which further increases the temperature. And the current continues to increase until the power supply limit is exceeded. The value of the temperature coefficient of resistance at which such a runaway of current occurs is empirically a negative value and the absolute value is 1% or more. That is, the temperature coefficient of resistance of the antistatic film is minus one.
% Is desirable.

As a material having an antistatic film property, a metal oxide is excellent. Among metal oxides, oxides of chromium, nickel, and copper are preferred materials. The reason is considered to be that these oxides have a relatively low secondary electron emission efficiency and are difficult to be charged even when electrons emitted from the electron-emitting device hit the spacer. In addition to metal oxides, carbon is a preferable material having a low secondary electron emission efficiency.

However, it is difficult to adjust the resistance value of the above-mentioned metal oxide or carbon to a specific resistance range which is desirable as an antistatic film, and the resistance tends to change depending on the atmosphere. Poor controllability.

By adjusting the composition of the transition metal, the nitride of aluminum and the transition metal alloy can be used as an antistatic film for the spacer because the resistance can be controlled in a wide range from a good conductor to an insulator. . Further, it is a stable material that has a small change in resistance value in a display device manufacturing process described later. And its temperature coefficient of resistance is minus 1%
It is a material that is practically easy to use. Examples of the transition metal element include Ti, Cr, and Ta. When the transition metal content is 5 atom% or more, the specific resistance is 10 ⁸ Ωc.
m or less, and an antistatic effect is obtained.

When used as a spacer, the ratio of the transition metal contained in the film is 5 to 60 atm with respect to Al.
om% is preferred.

In the antistatic film according to the present invention, as shown in FIG. 1, the surface of a semiconductive film 5 (hereinafter abbreviated as alloy nitride film) made of an aluminum transition metal alloy nitride film is formed into an alloy nitride film in which carbon 3 is dispersed. Or a structure in which carbon is deposited in an island shape on the surface of a semiconductive film formed on an insulating member, or a carbon is deposited in an island shape on a semiconductive film of an alloy nitride film having a layer in which carbon is dispersed. It is characterized by having a configuration as described above.

The resistance value of the entire antistatic film is generally determined by the resistance value of the alloy nitride film. Carbon present in the vicinity of the surface has an effect of suppressing secondary electron emission, so that the specific resistance in a desired range can be reduced. Having an antistatic film.

When electrons emitted from the vicinity of the spacer 1020 enter the spacer surface, the energy thereof is determined by the voltage applied between the rear plate and the face plate, and is about several KV to about several tens KV.

In consideration of the trajectories of the emitted electrons, the emitted electrons often enter the spacer 1020 obliquely. In general, when electrons are incident on the surface of a substance, the emission rate of the secondary is the minimum when vertically incident, and when obliquely incident, the incident angle θ measured from the sample surface normal is It increases by 1 / cos θ.

When carbon is formed in the form of a film on the surface of the alloy nitride film, the effect of suppressing charging, which is the original purpose, may be reduced by electrons obliquely incident.

On the other hand, when carbon is formed in an island shape on the surface, as shown in FIG.
The electron beam obliquely incident on the surface of 0 at an incident angle of θ is incident on each island locally at an angle (θ ′) closer to the normal to the surface of each carbon particle. Therefore, it is possible to maintain the suppression of the secondary electron emission rate, and it is possible to sufficiently exert the charge suppression effect by the carbon particles.

In the case of island-shaped carbon, when each particle size is small, as shown in FIG.
Electrons entering one carbon particle are transmitted and enter adjacent carbon particles. At this time, the secondary electrons are emitted to the gap between the particles, and the amount of secondary electrons emitted from the spacer surface can be reduced.

On the other hand, when each particle size is large,
As shown in FIG. 3B, secondary electrons emitted from carbon are emitted from the surface of the spacer, which may reduce the charge suppression effect.

Further, the depth at which the secondary electrons are emitted differs depending on the substance. When the electrons are perpendicularly incident on the surface of the substance,
It is estimated to be from several nm to about 20 nm. When carbon is dispersed in the area from the surface to the depth,
The collision of secondary electrons with carbon makes it possible to suppress secondary electron emission.

Since carbon has a secondary electron emission rate of approximately 1, it is optimal for the purpose of suppressing charging, but it is difficult to obtain a semiconductive film having a stable resistance.

On the other hand, when carbon is deposited in an island shape on the semiconductive film, the resistance of the spacer is determined by the semiconductive film, so that it is used for the purpose of suppressing the emission amount of secondary electrons. Will be able to do it.

The alloy nitride film defining the resistance of the spacer is formed on the insulating member by thin film forming means such as sputtering, reactive sputtering in a nitrogen gas atmosphere, electron beam evaporation, ion plating, and ion assisted evaporation. You.

Carbon is deposited by vapor deposition, sputtering, CVD
If the thickness is adjusted to several nm by the plasma CVD method,
Since the alloy nitride film is deposited in an island shape, the alloy nitride film and the island-like carbon are alternately formed at the final stage of the formation of the alloy nitride film, thereby producing an alloy nitride film having an alloy nitride film in which carbon is dispersed on the surface. Can be. In the case of producing amorphous carbon, hydrogen can be contained in the atmosphere during the film formation, or a hydrocarbon gas can be used as the film formation gas. Even when carbon is formed in an island shape on the surface of the semiconductive film, it can be manufactured using the same method.

In the case of the CVD method or the plasma CVD method, CH ₄ and C ₄ H ₁₀ can be diluted with hydrogen and used as a carbon raw material.

Although the antistatic film according to the present invention has been described with respect to the prevention of spacer electrification in a flat display device, the present invention is not limited to this and can be used as an antistatic film in other applications.

(Configuration and Manufacturing Method of Image Forming Apparatus) Next, the configuration and manufacturing method of the display panel of the image forming apparatus to which the present invention is applied will be described with reference to specific examples.

FIG. 4 is a perspective view of a display panel used in the present embodiment, in which a part of the panel is cut away to show the internal structure.

In the figure, 1015 is a rear plate, 1016
Reference numeral 1017 denotes a face plate, and a rear plate 1015 to a face plate 1017 form an airtight container for maintaining the inside of the display panel at a vacuum. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in air or nitrogen atmosphere, 400-50
Sealing was achieved by firing at 0 degrees for 10 minutes or more.
A method of evacuating the inside of the airtight container to a vacuum will be described later. The inside of the airtight container is 1 × 10 ⁻⁶ [Torr
r], a spacer 1020 is provided as an anti-atmospheric structure for the purpose of preventing the hermetic container from being destroyed by atmospheric pressure or unexpected impact.

The rear plate 1015 has a substrate 1011
Is fixed, but the cold cathode element 1012 is provided on the substrate.
Are formed n × m. n and m are positive integers of 2 or more, and are appropriately set according to the target number of display pixels. For example, in a display device for displaying a high-definition television, it is desirable to set the number of n = 3000 and m = 1000 or more. The n × m cold cathode elements are arranged in a simple matrix by m row wirings 1013 and n column wirings 1014. Substrate 1
The portion formed by the line 011-column direction wiring 1014 is called a multi-electron beam source.

The multi-electron beam source used in the image forming apparatus of the present invention is not limited in the material, the shape, or the manufacturing method of the cold cathode device as long as the cold cathode device is an electron source having a simple matrix wiring. Therefore, for example, a cold cathode device such as a surface conduction type emission device, an FE type, or an MIM type can be used.

In this embodiment, the substrate 1011 of the multi-electron beam source is fixed to the rear plate 1015 of the airtight container.
When 11 has a sufficient strength, the substrate 10 of the multi-electron beam source is used as a rear plate of the hermetic container.
11 itself may be used.

A fluorescent film 1018 is formed on the lower surface of the face plate 1017. Since the present embodiment is a color display device, C
Phosphors of three primary colors of red, green and blue used in the field of RT are separately applied. The phosphor of each color is, for example, shown in FIG.
(A), a black conductor 1010 is provided between stripes of the phosphor, which are separately applied in stripes. The purpose of providing the black conductor 1010 is to prevent the display color from being shifted even if the irradiation position of the electron beam is slightly shifted, and to prevent the reflection of external light to lower the display contrast. And preventing charge-up of the fluorescent film due to the electron beam. Although graphite is used as a main component for the black conductor 1010, any other material may be used as long as it is suitable for the above purpose.

The method of applying the phosphors of the three primary colors is not limited to the stripe arrangement shown in FIG. 5A, but may be, for example, a delta arrangement as shown in FIG. Other arrangements may be used.

When a monochrome display panel is manufactured, a monochromatic phosphor material may be used for the phosphor film 1018, and a black conductive material may not necessarily be used.

As shown in FIG. 4, a metal back 1019 known in the field of CRTs is provided on the surface of the fluorescent film 1018 on the rear plate side. Metal back 101
The purpose of providing 9 is to improve the light utilization rate by mirror-reflecting a part of the light emitted from the fluorescent film 1018, to protect the fluorescent film 1018 from the collision of negative ions, and to increase the electron beam acceleration voltage. To act as an electrode for applying an electric field, or to act as a conductive path for excited electrons of the fluorescent film 1018. The metal back 1019 is a fluorescent film 1018
Was formed on a face plate substrate 1017, the surface of the fluorescent film was smoothed, and Al was formed thereon by vacuum evaporation. Note that when a fluorescent material for low voltage is used for the fluorescent film 1018, the metal back 1019 is not used.

Although not used in this embodiment, for the purpose of applying an acceleration voltage or improving the conductivity of the fluorescent film, for example, ITO is used as a material between the face plate substrate 1017 and the fluorescent film 1018. May be provided.

FIG. 6 is a schematic sectional view taken along the line AA ′ of FIG. 4, and FIG. 7 is a schematic sectional view of the spacer 1020. The number of each part corresponds to FIG. The spacer 1020 is formed by depositing a semiconductive film 1020b for the purpose of preventing static electricity on the surface of the insulating member 1020a, which is a spacer base, and inside the face plate 1017 (such as a metal back 1019).
And a member in which a low-resistance film 1020c is formed on the contact surface of the spacer 1020 facing the surface (the row wiring 1013 or the column wiring 1014) of the substrate 1011;
As many as necessary to achieve the above-mentioned object and at necessary intervals, they are fixed to the inside of the face plate 1017 and the surface of the substrate 1011 by a conductive bonding material 1040.

The antistatic film 1020b is formed on at least the surface of the insulating member 1020a that is exposed to the vacuum in the airtight container.
Low resistance film 1020c on 20 and conductive bonding material 104
0, it is electrically connected to the inside of the face plate 1017 (such as the metal back 1019) and to the surface of the substrate 1011 (the row wiring 1013 or the column wiring 1014).

In the embodiment described here, the spacer 1020 has a thin plate shape, is arranged parallel to the row wiring 1013, and is electrically connected to the row wiring 1013.

As the spacer 1020, the substrate 1011
Has insulating properties enough to withstand high voltage applied between the upper row direction wiring 1013 and column direction wiring 1014 and the metal back 1019 on the inner surface of the face plate 1017;
In addition, it is necessary to have conductivity enough to prevent the surface of the spacer 1020 from being charged. This is as described above.

The insulating member 1020a of the spacer 1020
Examples thereof include quartz glass, glass with a reduced impurity content such as Na, soda lime glass, and ceramic members such as alumina. The insulating member 10
Preferably, 20a has a coefficient of thermal expansion close to that of the member forming the airtight container and the substrate 1011.

As described above, the surface resistance Rs of the antistatic film 1020b is set to 10 in consideration of maintaining the antistatic effect and suppressing power consumption due to leakage current.
It is preferably in the range of ⁵ [Ω / □] to 10 ¹² [Ω / □], and the various materials described above are used as the material.

Further, the resistance value of the low resistance film 1020c may be selected to be sufficiently lower than that of the antistatic film 1020b.
Ni, Cr, Au, Mo, W, Pt, Ti, Al, C
u, Pd and other metals or alloys, and Pd, Ag. A
u, RuO ₂ , Pd—Ag or other metal or metal oxide, and a printed conductor made of glass or the like, or In ₂ O ₃ —S
It is appropriately selected from a transparent conductor such as nO ₂ and a semiconductor material such as polysilicon.

The conductive bonding material 1040 is a spacer 1020
Need to have conductivity so as to be electrically connected to the row wiring 1013 and the metal back 1019.
That is, frit glass to which a conductive adhesive, metal particles, or a conductive filler is added is preferable.

Dx1 to Dxm and Dy1 to Dy
n and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel and an electric circuit (not shown). Dx1 to Dxm are multi-electron beam source row direction wirings 1013, and Dy1 to Dyn are multi-electron beam sources.
The column direction wiring 1014 of the memory source and Hv are electrically connected to the metal back 1019 of the face plate.

In order to evacuate the inside of the airtight container, after assembling the airtight container, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the airtight container is evacuated to a degree of vacuum of about 10 ^-7 [Torr]. Exhaust until After that, the exhaust pipe is sealed,
In order to maintain the degree of vacuum in the hermetic container, a getter film (not shown) is formed at a predetermined position in the hermetic container immediately before or after sealing. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating, and the inside of the hermetic container is 1 × due to the adsorbing action of the getter film. 10 ^-5 or 1 ×
The degree of vacuum is maintained at 10 ^-7 [Torr].

In the image forming apparatus using the display panel described above, when a voltage is applied to each of the cold cathode devices 1012 through the external terminals Dx1 to Dxm and Dy1 to Dyn, electrons are emitted from each of the cold cathode devices 1012. At the same time, a high voltage of several hundred [V] to several [kV] is applied to the metal back 1019 through the external terminal Hv to accelerate the emitted electrons and collide with the inner surface of the face plate 1017. As a result, the phosphor of each color forming the fluorescent film 1018 is excited and emits light, and an image is displayed.

Normally, the voltage applied to 1012 to the surface conduction electron-emitting device of the present invention, which is a cold cathode device, is 12 to 16
[V], metal back 1019 and cold cathode element 101
The distance d between the metal back 1019 and the cold cathode element 1012 is 0.1 mm to 8 mm.
It is about 1 [kV] to about 10 [kV].

The basic configuration and manufacturing method of the display panel according to the embodiment of the present invention and the outline of the image forming apparatus have been described.

(Method of Manufacturing Multi-Electron Beam Source)
A method for manufacturing the multi-electron beam source used for the display panel of the embodiment will be described.

The multi-electron beam source used in the image forming apparatus of the present invention is not limited as long as it is an electron source in which the cold cathode devices are arranged in a simple matrix wiring. Therefore, for example, a cold cathode device such as a surface conduction type emission device, an FE type, or an MIM type can be used.

However, in a situation where a display device having a large display screen and an inexpensive display device is required, among these cold cathode devices, a surface conduction type emission device is particularly preferable. That is, in the FE type, since the relative position and shape of the emitter cone and the gate electrode greatly affect the electron emission characteristics, extremely high-precision manufacturing technology is required. However, this requires a large area and a reduction in manufacturing cost. Is a disadvantageous factor to achieve. In the case of the MIM type, it is necessary to make the thicknesses of the insulating layer and the upper electrode thin and uniform, which is also a disadvantageous factor in achieving a large area and a reduction in manufacturing cost. On the other hand, since the surface conduction electron-emitting device has a relatively simple manufacturing method, it is easy to increase the area and reduce the manufacturing cost.

The inventors have found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have particularly excellent electron-emitting characteristics and can be easily manufactured. I have. Therefore,
It can be said that it is most suitable for use in a multi-electron beam source of a high-brightness, large-screen image forming apparatus. Therefore, in the display panel of the above embodiment, a surface conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is used. Therefore, the basic structure, manufacturing method and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron beam source in which a large number of devices are arranged in a simple matrix will be described.

A typical configuration of a surface conduction electron-emitting device in which an electron-emitting portion or its peripheral portion is formed from a fine particle film includes:
There are two types, a flat type and a vertical type.

First, the device configuration and manufacturing method of the planar type surface conduction electron-emitting device will be described. FIG. 8 shows that
It is the top view (a) and sectional drawing (b) for demonstrating the structure of a plane type surface conduction electron-emitting device. In the figure, 1101
Reference numerals 1102 and 1103 denote device electrodes, 1104 denotes a conductive thin film, 1105 denotes an electron-emitting portion formed by an energization forming process, and 1113 denotes a thin film formed by an energization activation process.

As the substrate 1101, for example, various glass substrates such as quartz glass and blue plate glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO ₂ is formed on the various substrates described above. A laminated substrate or the like can be used.

The device electrodes 1102 and 1103 provided on the substrate 1101 so as to be parallel to the substrate surface are formed of a conductive material. For example, N
i, Cr, Au, Mo, W, Pt, Ti, Cu, Pd,
A material such as Ag or the like, an alloy of these metals, a metal oxide such as In ₂ O ₃ —SnO ₂ , or a semiconductor such as polysilicon may be appropriately selected and used. . To form the electrodes, for example, a film forming technique such as vacuum evaporation and photolithography,
Although it can be easily formed by using a combination of patterning techniques such as etching, it can be formed by other methods (for example, printing technique).

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode spacing L is usually designed by selecting an appropriate numerical value from the range of several hundreds of angstroms to several hundred micrometers, but among them, a preferable number for application to a display device is It is in the range of several tens of micrometer from the micrometer. Further, regarding the thickness d of the device electrode,
Usually, an appropriate numerical value is selected from the range of several hundred angstroms to several micrometers.

A fine particle film is used for the conductive thin film 1104. The fine particle film mentioned here is a film containing many fine particles as a constituent element (including an island-shaped aggregate).
I mean If you examine the microparticle film microscopically, usually
A structure in which the individual fine particles are spaced apart, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.

The particle size of the fine particles used in the fine particle film is in the range of several Angstroms to several thousand Angstroms, but is more preferably in the range of 10 Angstroms to 200 Angstroms. belongs to. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, the device electrode 11
02, 1103, necessary for good energization forming described below, and necessary for setting the electrical resistance of the fine particle film itself to an appropriate value described later. Conditions, etc. Specifically, the setting is made within a range of several Angstroms to several thousand Angstroms, and a preferable one is 10 Angstroms.
Between 500 and 500 angstroms.

Materials that can be used to form the fine particle film include, for example, Pd, Pt, Ru, Ag,
Au, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb, and other metals, PdO, S
Oxides such as nO ₂ , In ₂ O ₃ , PbO, Sb ₂ O ₃ , etc., HfB ₂ , ZrB ₂ , LaB ₆ , CeB ₆ ,
Borides such as YB ₄ , GdB ₄ , etc., Ti
Carbides such as C, ZrC, HfC, TaC, SiC, WC, etc., nitrides such as TiN, ZrN, HfN, semiconductors such as Si, Ge, carbon, etc. And these are appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film.
It was set so as to be included in the range of 10 ³ to 10 ⁷ [ohm / sq].

Note that the conductive thin film 1104 and the device electrode 11
Since it is desirable that the wires 02 and 1103 be electrically connected well, they have a structure in which a part of each overlaps with the other. In the example of FIG. 8, the overlapping is performed in the order of the substrate, the element electrode, and the conductive thin film from the bottom, but in some cases, the substrate, the conductive thin film, and the element electrode are stacked in the order of the bottom. I can't wait.

The electron-emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has an electrically higher resistance than the surrounding conductive thin film. The crack is formed by performing a later-described energization forming process on the conductive thin film 1104. Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 1113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process. The thin film 1113 is any one of single crystal graphite, polycrystal graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 Å or less, but preferably 300 Å or less. More preferred. Since it is difficult to precisely show the actual position and shape of the thin film 1113, it is schematically shown in FIG. Also, in the plan view (a), the thin film 1
The device from which a part of 113 is removed is shown.

The basic structure of the preferred element has been described above. In this embodiment, the following element is used.

That is, blue glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of the device electrode is 1000 [angstrom].
And the electrode interval L was 2 [micrometer]. Pd or PdO was used as the main material of the fine particle film, and the thickness of the fine particle film was about 100 [angstrom] and the width W was 100 [micrometer].

(Manufacturing Method of Planar Surface-Conduction Electron Emission Device) Next, a preferred method of manufacturing a flat surface conduction electron-emitting device will be described. (A) to (d) of FIG.
8 is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device, in which notation of each member is the same as that in FIG.

(1) First, as shown in FIG. 9A, device electrodes 1102 and 1103 are formed on a substrate 1101. Before forming, the substrate 1101
Is thoroughly washed using a detergent, pure water, and an organic solvent, and then a material for an element electrode is deposited. As a deposition method, for example, a vacuum film forming technique such as an evaporation method or a sputtering method may be used. Thereafter, the deposited electrode material is patterned by using a photolithography-etching technique, and FIG.
A pair of element electrodes 1102 and 1103 shown in FIG.

(2) Next, a conductive thin film 1104 is formed as shown in FIG. In forming,
First, an organic metal solution is applied to the substrate (a), dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. Here, the organometallic solution is a solution of an organometallic compound whose main element is a material of fine particles used for the conductive thin film. Specifically, in this embodiment, Pd is used as a main element. In the embodiment, the dipping method is used as a coating method, but other methods such as a spinner method and a spray method may be used. In addition, as a method for forming a conductive thin film made of a fine particle film, other than the method of applying the organometallic solution used in the present embodiment, for example, a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method may be used. Sometimes used.

(3) Next, as shown in FIG. 13C, the forming power supply 1110 switches the device electrodes 1102 and 1111 from each other.
The electron emitting portion 1105 is formed by applying an appropriate voltage during the period 03 and performing the energization forming process.

The energization forming process is a structure suitable for applying an electric current to the conductive thin film 1104 made of a fine particle film to break, deform, or alter a part of the conductive thin film 1104 as appropriate to emit electrons. Is a process for changing the A portion of the conductive thin film made of a fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 110
In 5), an appropriate crack is formed in the thin film.
Note that the electrical resistance measured between the device electrodes 1102 and 1103 is significantly increased after the formation of the electron emission portions 1105 as compared to before the formation.

FIG. 10 shows an example of an appropriate voltage waveform applied from the forming power supply 1110 in order to explain the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulse-like voltage is preferable. In the case of this embodiment, a triangular wave pulse having a pulse width T1 and a pulse interval T2 as shown in FIG. Was applied continuously. At that time, the peak value Vpf of the triangular wave pulse is
The pressure was increased sequentially. In addition, a monitor pulse Pm for monitoring the state of formation of the electron-emitting portion 1105 was inserted between triangular-wave pulses at appropriate intervals, and the current flowing at that time was measured by an ammeter 1111.

In this embodiment, for example, 10
Under a vacuum atmosphere of about ^-5 [torr], for example, the pulse width T1 is 1 [millisecond] and the pulse interval T2 is 10
[Milliseconds], and the peak value Vpf is set to 0.1 for each pulse.
The voltage was increased by [V]. Then, each time five triangular waves were applied, a monitor pulse Pm was inserted once. The monitor pulse voltage Vpm was set to 0.1 [V] so as not to adversely affect the forming process. Then, when the electric resistance between the element electrodes 1102 and 1103 becomes 1 × 10 ⁶ [ohm], that is, the current measured by the ammeter 1111 when the monitor pulse is applied is 1 × 10 ⁻⁷ [A]. At the following stage, the energization related to the forming process was terminated.

The above method is a preferable method for the surface conduction electron-emitting device of this embodiment. For example, the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the element electrode interval L is changed. In such a case, it is desirable to appropriately change the energization conditions accordingly.

(4) Next, as shown in FIG.
The device electrodes 1102 and 1103 are supplied from the activation power source 1112.
During the energization activation process, apply an appropriate voltage during
Improve electron emission characteristics.

The energization activating process is a process of energizing the electron-emitting portion 1105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof. In FIG. 9, a deposit made of carbon or a carbon compound is schematically shown as a member 1113.

By performing the activation process,
The emission current at the same applied voltage compared to before
Typically, it can be increased by a factor of 100 or more. Specifically, by applying a voltage pulse periodically in a vacuum atmosphere in the range of 10 ^-4 to 10 ^-5 power [torr], carbon or carbon originating from an organic compound existing in the vacuum atmosphere can be obtained. The carbon compound is deposited. Sediment 111
Reference numeral 3 denotes one of single-crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a film thickness of 500 [Å] or less, more preferably 300 [Å] or less. It is.

In order to explain the energizing method in more detail, FIG. 11A shows an example of an appropriate voltage waveform applied from the activation power supply 1112. In the present embodiment, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically, but specifically, the rectangular wave voltage Vac is 14
[V], pulse width T3 is 1 [millisecond], pulse interval T4
Was set to 10 [milliseconds]. Note that the above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, it is desirable to appropriately change the conditions accordingly. .

An anode electrode 1114 shown in FIG. 9D for capturing the emission current Ie emitted from the surface conduction electron-emitting device is connected to a DC high voltage power supply 1115 and an ammeter 1116. I have. Note that the substrate 1101 is
When the activation process is performed after being incorporated in the display panel, the phosphor screen of the display panel is used as the anode electrode 1114. While the voltage is applied from the activation power supply 1112, the emission current Ie is measured by the ammeter 1116 to monitor the progress of the energization activation process, and the activation power supply 1112 is monitored.
Control the operation of. An example of the emission current Ie measured by the ammeter 1116 is shown in FIG.
When the application of the pulse voltage starts from 12, the emission current Ie increases with the passage of time, but eventually saturates and hardly increases. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 1112 is stopped, and the energization activation process ends.

The above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions are appropriately changed accordingly. It is desirable.

As described above, the plane type surface conduction electron-emitting device shown in FIG. 9E was manufactured.

(Method of Manufacturing Vertical Type Surface Conduction Electron-Emitting Element) Next, another typical structure of a surface conduction electron-emitting element in which an electron-emitting portion or its periphery is formed of a fine particle film, that is, a vertical type. The configuration of the surface conduction electron-emitting device will be described.

FIG. 12 is a schematic cross-sectional view for explaining the basic structure of the vertical type. In FIG.
202 and 1203 are device electrodes, 1206 is a step forming member, 1204 is a conductive thin film using a fine particle film, 1205
Are electron emitting portions formed by an energization forming process;
213 is a thin film formed by the activation process.

The difference between the vertical type and the flat type described above is that one of the element electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 is provided on the side surface of the step forming member 1206. It is in the point of coating. Therefore, the element electrode interval L in the planar type shown in FIG.
Is the step height L of the step forming member 1206 in the vertical type.
s. In addition, the substrate 1201, the element electrode 1
202 and 1203, conductive thin film 1 using fine particle film
204, the materials listed in the description of the planar type can be used in the same manner. For the step forming member 1206, an electrically insulating material such as SiO ₂ is used.

Next, a method of manufacturing a vertical surface conduction electron-emitting device will be described. FIGS. 13A to 13F are cross-sectional views for explaining a manufacturing process, and the notation of each member is the same as that in FIG.

(1) First, as shown in FIG.
An element electrode 1203 is formed over a substrate 1201.

(2) Next, as shown in FIG. 13B, an insulating layer for forming a step forming member is laminated. The insulating layer may be formed by stacking, for example, SiO ₂ by a sputtering method, but another film forming method such as a vacuum evaporation method or a printing method may be used.

(3) Next, as shown in FIG. 13C, an element electrode 1202 is formed on the insulating layer.

(4) Next, as shown in FIG. 13D, a part of the insulating layer is removed by using, for example, an etching method.
The device electrode 1203 is exposed.

(5) Next, as shown in FIG. 14E, a conductive thin film 1204 using a fine particle film is formed. For the formation, as in the case of the flat type, a film forming technique such as a coating method may be used.

(6) Next, as in the case of the flat type,
An energization forming process is performed to form an electron emission portion.
The energization forming process may be the same as the planar energization forming process described with reference to FIG.

(7) Next, as in the case of the flat type,
An energization activation process is performed to deposit carbon or a carbon compound near the electron emission portion. The energization activation process is shown in FIG.
What is necessary is just to perform the same process as the planar type energization activation process described using (d).

As described above, the vertical surface conduction electron-emitting device shown in FIG. 13F was manufactured.

(Characteristics of surface conduction electron-emitting device)
The device configuration and manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described. Next, the characteristics of the devices used in the image forming apparatus will be described.

FIG. 14 shows typical examples of (emission current Ie) versus (device applied voltage Vf) characteristics and (device current If) versus (device applied voltage Vf) characteristics of the device used in the display device. . Note that the emission current Ie is significantly smaller than the element current If, and it is difficult to show the same current on the same scale.
Since these characteristics are changed by changing design parameters such as the size and shape of the element, the two graphs are shown in arbitrary units.

The element used in the image forming apparatus has an emission current I
e has three characteristics described below.

First, a certain voltage (this is referred to as a threshold voltage Vth
When a voltage of the above magnitude is applied to the element, the emission current Ie sharply increases. On the other hand, at a voltage lower than the threshold voltage Vth, the emission current Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the voltage Vf applied to the element, the emission current Ie varies with the voltage Vf.
The magnitude of e can be controlled.

Third, since the response speed of the current Ie emitted from the element is faster with respect to the voltage Vf applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time during which the voltage Vf is applied. Can control.

Because of the above characteristics, the surface conduction electron-emitting device could be suitably used for an image forming apparatus. For example, in an image forming apparatus in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, it is possible to sequentially scan the display screen to perform display.

That is, a voltage equal to or higher than the threshold voltage Vth is appropriately applied to the element under driving according to the desired light emission luminance, and a voltage lower than the threshold voltage Vth is applied to the element in the non-selected state. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, by utilizing the second characteristic or the third characteristic, the light emission luminance can be controlled, so that gradation display can be performed.

(Structure of Multi-Electron Beam Source) Next, the structure of a multi-electron beam source in which the above-mentioned surface conduction electron-emitting devices are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 15 is a plan view of the multi-electron beam source used for the display panel of FIG. On the board,
Surface conduction type emission elements similar to those shown in FIG. 8 are arranged, and these elements are wired in a simple matrix by row-direction wiring electrodes 1003 and column-direction wiring electrodes 1004. An insulating layer (not shown) is formed between the electrodes at the intersections of the row wiring electrodes 1003 and the columns 1004.
Electrical insulation is maintained.

FIG. 16 is a sectional view taken along the line BB ′ of FIG.
Shown in The multi-electron source having such a structure includes a row-direction wiring electrode 1003 and a column-direction wiring electrode 103 on a substrate in advance.
04, an inter-electrode insulating layer (not shown), and device electrodes 1102 and 1103 of the surface conduction electron-emitting device and the conductive thin film 1
After the formation of 104, power was supplied to each element via the row-direction wiring electrodes 1003 and the column-direction wiring electrodes 1004 to perform a current-forming process and a current-activation process.

FIG. 17 is a block diagram showing a schematic configuration of a driving circuit for performing television display based on an NTSC television signal. In the figure, a display panel 1701 corresponds to the above-described display panel, and is manufactured and operates as described above. In addition, the scanning circuit 1702
Scans the display line, and the control circuit 1703 generates a signal to be input to the scanning circuit. The shift register 1704 shifts data for each line, and stores the data in a line memory 1705.
Inputs one line of data from the shift register 1704 to the modulation signal generator 1707. The synchronization signal separation circuit 1706 separates the synchronization signal from the NTSC signal.

Hereinafter, the function of each unit of the apparatus shown in FIG. 17 will be described in detail. First, the display panel 1701 is connected to an external electric circuit through terminals Dx1 to Dxm, terminals Dy1 to Dyn, and a high-voltage terminal Hv. Among them, the terminals Dx1 to Dxm are connected to the display panel 1701.
A scanning signal for sequentially driving one row (n elements) of the multi-electron beam sources provided therein, that is, the cold cathode elements arranged in a matrix of m rows and n columns is applied. , Terminals Dy1 to Dyn are applied with a modulation signal for controlling the output electron beam of each of the n elements for one row selected by the scanning signal, and a DC voltage is applied to the high voltage terminal Hv. From the source Va, for example, 5 [k
V], which is an accelerating voltage for applying sufficient energy to the electron beam output from the multi-electron beam source to excite the phosphor.

Next, the scanning circuit 1702 will be described. This circuit has m switching elements inside (in the figure,
S1 to Sm), each switching element selects either the output voltage of the DC voltage source Vx or 0 [V] (ground level), and the switching element of the display panel 1701 Terminals Dx1 to Dxm
It is electrically connected to. Each of the switching elements S1 to Sm operates based on the control signal Tscan output from the control circuit 1703. However, in practice, the switching elements can be easily configured by combining switching elements such as FETs. . The DC voltage source Vx outputs a constant voltage so that the driving voltage applied to the unscanned element is equal to or lower than the electron emission threshold voltage Vth based on the characteristics of the electron emission element illustrated in FIG. Is set to

The control circuit 1703 has a function of coordinating the operation of each unit so that appropriate display is performed based on an image signal input from the outside. A synchronization signal Tsy sent from a synchronization signal separation circuit 1706 described below.
Tscan and Tsf for each part based on nc
The control signals t and Tmry are generated.

A synchronizing signal separating circuit 1706 is a circuit for separating a synchronizing signal component and a luminance signal component from an NTSC television signal input from the outside. As is well known, a frequency separating (filter) is used. It can be easily configured by using a circuit. The synchronization signal separated by the synchronization signal separation circuit 1706 is composed of a vertical synchronization signal and a horizontal synchronization signal, as is well known, but is illustrated here as a Tsync signal for convenience of explanation. On the other hand, the luminance signal component of the image separated from the television signal is referred to as DAT for convenience.
This signal is represented by an A signal, which is input to a shift register 1704.

A shift register 1704 is for serially / parallel-converting the DATA signal input serially in time series for each line of an image, and is based on a control signal Tsft sent from the control circuit 1703. Works. That is, the control signal Tsft can be rephrased as a shift clock of the shift register 1704. The data for one line of the image subjected to the serial / parallel conversion (corresponding to drive data for n electron-emitting devices) is output from the shift register 1704 as n signals Id1 to Idn.

The line memory 1705 is a storage device for storing data of one line of an image for a required time, and stores the contents of Id1 to Idn as appropriate according to a control signal Tmry sent from the control circuit 1703.
The stored contents are output as I'd1 to I'dn and input to the modulation signal generator 1707.

A modulation signal generator 1707 is a signal source for appropriately driving and modulating each of the electron-emitting devices 1015 in accordance with each of the image data I'd1 to I'dn.
The output signal is applied to the electron-emitting device 1015 in the display panel 1701 through the terminals Dy1 to Dyn.

As described with reference to FIG. 14, the surface conduction electron-emitting device according to the present invention has the following basic characteristics with respect to the emission current Ie.

That is, a clear threshold voltage V is required for electron emission.
th (8 in the surface conduction electron-emitting device of the embodiment described later)
[V]), and electron emission occurs only when a voltage equal to or higher than the threshold value Vth is applied. For a voltage equal to or higher than the electron emission threshold Vth, the emission current Ie also changes according to the change in the voltage as shown in the graph of FIG. For this reason, when a pulse-like voltage is applied to the device, for example, when a voltage equal to or lower than the electron emission threshold Vth is applied, no electron emission occurs. An electron beam is output from the conduction type emission device. At this time, the intensity of the output electron beam can be controlled by changing the pulse peak value Vm. In addition, it is possible to control the total amount of charges of the output electron beam by changing the pulse width Pw.

Therefore, a voltage modulation method, a pulse width modulation method, or the like can be adopted as a method of modulating the electron-emitting device according to the input signal.

When implementing the voltage modulation method, the modulation signal generator 1707 generates a voltage pulse of a fixed length, and modulates the peak value of the pulse appropriately according to input data. A circuit can be used.

When the pulse width modulation method is performed, the modulation signal generator 1707 generates a voltage pulse having a constant peak value and modulates the width of the voltage pulse appropriately according to input data. A pulse width modulation circuit can be used. The shift register 1704 and the line memory 1705 can be of a digital signal type or an analog signal type. That is, the serial / parallel conversion and storage of the image signal may be performed at a predetermined speed.

When the digital signal type is used, the output signal DATA of the synchronization signal separation circuit 1706 needs to be converted into a digital signal.
An A / D converter may be provided at the output unit 6. In this connection, the circuit used for the modulation signal generator differs slightly depending on whether the output signal of the line memory 115 is a digital signal or an analog signal. That is, in the case of the voltage modulation method using a digital signal, for example, a D / A conversion circuit is used as the modulation signal generator 1707, and an amplification circuit and the like are added as necessary.

In the case of the pulse width modulation method, the modulation signal generator 1707 includes, for example, a high-speed oscillator, a counter for counting the number of waves output from the oscillator, and a comparison between the output value of the counter and the output value of the memory. A circuit in which a comparator (comparator) is combined is used. If necessary, an amplifier for amplifying the pulse width modulated signal output from the comparator to the drive voltage of the electron-emitting device can be added.

In the case of the voltage modulation method using an analog signal, the modulation signal generator 1707 can employ an amplification circuit using, for example, an operational amplifier, and can add a shift level circuit and the like as necessary. In the case of the pulse width modulation method, for example, a voltage controlled oscillator (VCO)
And, if necessary, an amplifier for amplifying the driving voltage or voltage of the electron-emitting device can be added.

In the image forming apparatus to which the present invention can be applied in such a configuration, by applying a voltage to each of the electron-emitting devices via the terminals Dx1 to Dxm and Dy1 to Dyn outside the container, the electron-emitting devices can emit electrons. Occurs. A high voltage is applied to the metal back 1019 or a transparent electrode (not shown) via the high voltage terminal Hv to accelerate the electron beam. The accelerated electrons collide with the fluorescent film 1018 and emit light to form an image.

The configuration of the image forming apparatus described here is an example of an image forming apparatus to which the present invention can be applied, and various modifications can be made based on the concept of the present invention. The input signal is described in the NTSC system. However, the input signal is not limited to the NTSC system, but may be a PAL or SECAM system or a TV signal (MUSE system or other high-definition TV) system including a larger number of scanning lines. Can also be adopted.

In the above-mentioned embodiment, the example of the shape of the spacer is shown as a thin plate.
There are L type, comb type, etc., and furthermore, as shown in FIGS. 18 (a) and (b), a cylindrical hole is formed in a honeycomb shape or a substrate cut out in a line shape corresponds to each electron source or a plurality of electron sources. Then, it is set in various forms. Further, by using the spacer 1020 covered with the antistatic film, the effect becomes remarkable as the size of the image forming apparatus increases.

[0167]

The present invention will be described in more detail with reference to the following examples.

In each of the embodiments described below, as the multi-electron beam source, n × m (here, n × m) types of the above-described type having an electron emission portion in the conductive fine particle film between the electrodes.
= 3072, m = 1024) in the form of a matrix electron beam (see FIGS. 4 and 15) using m row wirings and n column wirings. Using.

In this embodiment, a display panel on which the spacer 1020 shown in FIG. Hereinafter, this will be described in detail with reference to FIG. 4, FIG. 6, and FIG.

First, a substrate 1011 on which a row direction wiring electrode 1013, a column direction wiring electrode 1014, an interelectrode insulating layer (not shown), a device electrode of a surface conduction electron-emitting device, and a conductive thin film are formed in advance is formed on a substrate. Rear plate 1015
Fixed to. Next, of the surface of the insulating member 1020a made of soda lime glass,
The surface has a semiconductive film 1020b and carbon 1020 to be described later.
d, and a spacer 1020 (height 5 [mm], plate thickness 200 [micrometer], length 20 mm) having a conductive film 1020 c formed on the contact surface is placed on the row-direction wiring 1013 of the substrate 1011. At intervals, it was fixed parallel to the row direction wiring 1013. Thereafter, a face plate 1017 having a fluorescent film 1018 and a metal back 1019 attached to the inner surface thereof is disposed 5 mm above the substrate 1011 via a side wall 1016, and a rear plate 1015 and a face plate 101 are disposed.
7. The joints of the side wall 1016 and the spacer 1020 were fixed. The joint between the substrate 1011 and the rear plate 1015, the joint between the rear plate 1015 and the side wall 1016, and the joint between the face plate 1017 and the side wall 1016 are coated with frit glass (not shown).
Sealing was performed by baking at 0 ° C. to 500 ° C. for 10 minutes or more.

Further, the spacer 1020 is connected to the substrate 1011.
A conductive frit glass (not shown) in which a conductive material such as a conductive filler or metal is mixed on the row direction wiring 1013 (line width 300 [micrometer]) on the side and on the metal back 1019 surface on the face plate 1017 side. By baking at 400 ° C. to 500 ° C. in the air for 10 minutes or more at the same time as sealing the airtight container,
Glued and electrical connections were made. In the present embodiment, as shown in FIG. 19, the fluorescent film 1018 adopts a stripe shape in which each color phosphor 21a extends in the column direction (Y direction), and the black conductor 21b is made of each color phosphor (R ,
G, B) A fluorescent film disposed so as to separate not only between the pixels 21a but also between the pixels in the Y direction is used.
020 is a black conductor 21 parallel to the row direction (X direction).
It was arranged in a region b (line width 300 [micrometer]) via a metal back 1019. When the above-mentioned sealing is performed, each color phosphor 21a must correspond to each element arranged on the substrate 1011. Therefore, the rear plate 1015, the face plate 1017, and the spacer 1020 are located at a sufficient position. Matching was performed.

The inside of the airtight container completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the outer terminals Dx1 to Dxm and Dy1 to Dy1.
Power was supplied to each element through Dyn through the row wiring electrode 1013 and the column wiring electrode 1014, and the above-described energization forming process and energization activation process were performed to manufacture a multi-electron beam source.

Next, at a degree of vacuum of about 10 ⁻⁶ [Torr], an exhaust pipe (not shown) was welded by heating with a gas burner to seal the envelope (airtight container). Finally, a getter process was performed to maintain the degree of vacuum after sealing.

[Example 1] A spacer 1020 arranged in a display panel was manufactured as follows. Among the surfaces of the insulating member 1020a made of soda lime glass, the semiconductive film 1020b of a Cr-Al alloy nitride film having a layer in which carbon is dispersed is provided on four surfaces exposed in the airtight container.
Was formed, and a conductive film 1020c was formed on the contact surface to form a spacer 1020. The Cr-Al alloy nitride film was formed by simultaneously sputtering Cr and Al targets with a high frequency power supply. The sputtering gas is Ar: N ₂ 7: 3.
And the total pressure is 4 × 10 ⁻³ Torr. C
The RF power applied to the r and Al targets was 13
W was adjusted to 500 W to produce an alloy nitride film having a desired specific resistance. When the Cr concentration is in the range of 1 to 3 atom%, a film having a specific resistance of 5 × 10 ⁴ to 3 × 10 ⁵ Ωcm can be obtained.
Cr having a thickness of 180 nm and a surface resistance Rs = 3 × 10 ⁹ Ω
After forming the -Al alloy nitride film, instead of the target of carbon, a sputtering gas Ar: H ₂ = 7: to form an island-shaped carbon thick 2nm by sputtering in the same high frequency power source as 3. The total pressure of Ar + H ₂ was 4 × 10 ⁻³ Torr. After this, the target was changed again to Cr and Al and A
r: N ₂ is a mixed gas of 7: 3, and the total pressure is 4 × 10 ⁻³ T
Simultaneous sputtering with a high frequency power supply as orr formed an island-shaped Cr-Al alloy nitride having a thickness of 2 nm. By alternately performing sputtering using carbon as a target and sputtering using a high frequency power supply using Cr and Al as targets, a Cr-Al alloy nitride film in which carbon is dispersed was formed to a thickness of 20 nm.

The resistance value of each of the samples after the heat treatment at 425 ° C. and after the heat treatment at 200 ° C. in vacuum was measured, and the resistance values were stable. That is, since the antistatic film of the present invention has a small resistance change even after the heat treatment, the antistatic film is particularly effective for applications in which the use environment is vacuum, such as an electron beam display, or where the manufacturing process includes a high-temperature heat treatment and a vacuum heat treatment. .

Next, a low-resistance film 1020c is connected to the connection with the face plate and the rear plate in parallel with the connection.
A Pt film having a thickness of 0.1 μm was formed in a belt shape of μm.

In an image display device in which the spacer manufactured as described above is incorporated in a display panel as shown in FIGS. 4, 6, and 7, each cold cathode element (surface conduction type emission element) 1012 is provided. , External terminals Dx1 to Dxm,
Electrons are emitted by applying a scanning signal and a modulation signal from signal generation means (not shown) through Dy1 to Dyn, and an emitted electron beam is applied to the metal back 1019 by applying a high voltage Va through a high voltage terminal Hv. The image was displayed by accelerating and causing electrons to collide with the fluorescent film 1018 to excite and emit the phosphors 21a (R, G, B in FIG. 19) of each color. The voltage Va applied to the high-voltage terminal Hv is 3 kV to 10 kV, and each wiring 101
The applied voltage Vf between 3,1014 was 14 [V].

At this time, a two-dimensional array of light emitting spots including light emitting spots due to electrons emitted from the cold cathode element 1012 located close to the spacer 1020 is formed at two-dimensional intervals, so that a clear color image with good color reproducibility can be obtained. Display was completed.
This indicated that even when the spacer 1020 was installed, no disturbance of the electric field that would affect the electron trajectory occurred.

[Embodiment 2] In this embodiment, the spacer 1020 antistatic film disposed in the display panel is made of Cr.
Example 1 is the same as Example 1 except that carbon is deposited in an island shape on a semiconductive film of an Al alloy nitride film. In the present embodiment, a 190 nm-thick C
After the formation of the r-Al alloy nitride film, the sputtering gas was changed to Ar: H ₂ = 7: 3 in the same manner as in the case of using a carbon target, and a high-frequency power source was similarly used to form an island-like carbon having a thickness of 10 nm. The total pressure of Ar + H ₂ is 4 × 10 ⁻³ Torr
r. The resistance value of each of the samples was measured after heat treatment at 425 ° C., in a vacuum, and after heat treatment at 200 ° C. in a vacuum. The resistance value was stable. That is, the antistatic film according to the present invention has a small change in resistance even after heat treatment, and is particularly effective for applications in which the use environment is vacuum, such as an electron beam display, or where the manufacturing process includes high-temperature heat treatment and vacuum heat treatment. It is. When an image was displayed in the same manner as in Example 1,
Cold cathode element 1012 located at a position close to spacer 1020
A row of light-emitting spots was formed two-dimensionally at equal intervals, including light-emitting spots generated by electrons emitted from the device, and a clear, color-reproducible color image could be displayed.

[Embodiment 3] In this embodiment, the antistatic film of the spacer 1020 disposed in the display panel is formed by depositing carbon on a semiconductive film of a Cr-Al alloy nitride film having a layer in which carbon is dispersed. Example 1 except that it was deposited in an island shape
Is the same as

In this embodiment, after forming a 180 nm-thick Cr—Al alloy nitride film under the same conditions as in the first embodiment, the sputtering gas is changed to Ar: H instead of a carbon target.
Similarly, ₂ = 7: 3, and an island-like carbon having a thickness of 2 nm was similarly formed by sputtering with a high frequency power supply. The total pressure of Ar + H ₂ was 4 × 10 ⁻³ Torr. After that, the target is changed again to Cr and Al, and the mixed gas of Ar: N ₂ is 7: 3, and the total pressure is 4 × 10 ⁻³ Torr, and the sputtering is performed at the same time with a high frequency power supply using a sputtering gas, so that the thickness is 2 n.
Thus, an island-shaped Cr-Al alloy nitride of m was formed. By alternately performing sputtering with a high-frequency power supply with targets of carbon and targets of Cr and Al,
200 nm of carbon-dispersed Cr-Al alloy nitride film
Formed.

Further, on the surface of the semiconductive film, a carbon was used as a target, the sputtering gas was Ar: H ₂ = 7: 3, and a high-frequency power source was similarly sputtered to produce island-shaped carbon having a thickness of 10 nm. . The total pressure of Ar + H ₂ is 4 × 1
0 ^-3 Torr was set. The resistance value of each of the samples was measured after heat treatment at 425 ° C., in a vacuum, and after heat treatment at 200 ° C. in a vacuum. The resistance value was stable. That is, since the antistatic film of the present invention has a small resistance change even after the heat treatment, the antistatic film is particularly effective for applications in which the use environment is vacuum, such as an electron beam display, or where the manufacturing process includes a high-temperature heat treatment and a vacuum heat treatment. .

As in the case of the first embodiment, when an image is displayed, the cold cathode element 101 located near the spacer 1020 is displayed.
A row of light-emitting spots was formed two-dimensionally at equal intervals, including light-emitting spots generated by electrons emitted from 2, and a clear color image with good color reproducibility was obtained.

[Example 4] [0184] The method of producing island-like carbon shown in Example 2 is the same as Example 2 except that a plasma CVD method was used instead of the sputtering method. An amorphous carbon film having a thickness of 2 nm was formed on the Cr—Al alloy nitride film by a plasma CVD method using methane gas diluted with H ₂ as a raw material.

The resistance value of each of the samples was measured after heat treatment at 425 ° C., in vacuum, and after heat treatment at 200 ° C. in vacuum. The resistance values were stable. That is, since the antistatic film of the present invention has a small resistance change even after the heat treatment, the antistatic film is particularly effective for applications in which the use environment is vacuum, such as an electron beam display, or where the manufacturing process includes a high-temperature heat treatment and a vacuum heat treatment. .

As in the case of the first embodiment, when an image is displayed, the cold cathode element 101 located near the spacer 1020 is displayed.
A row of light-emitting spots was formed two-dimensionally at equal intervals, including light-emitting spots generated by electrons emitted from 2, and a clear color image with good color reproducibility was obtained.

[0187]

According to the present invention, since a spacer used in an electron beam device is covered with an antistatic film in which carbon is dispersed and deposited, a stable high resistance value can be obtained, and secondary electrons generated by the emission of an electron beam can be obtained. The generation of quantity can be prevented. Further, by forming the high-resistance film in an island shape or by forming the film as an extremely thin film, it was possible to suppress variations in the degree to which charge was removed in the plane of the high-resistance film.

Further, according to the present invention, by providing a highly stable antistatic film for a spacer and an image forming apparatus using the same, it is possible to prevent the occurrence of image fluctuations and to form a high quality image. .

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an antistatic film according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing an incident angle of an electron beam in the vicinity of particles deposited in an island shape on a surface according to the present invention.

FIG. 3 is a schematic view showing an incident angle of an electron beam in the vicinity of particles deposited in an island shape on a surface according to the present invention.

FIG. 4 is a perspective view of the image forming apparatus according to the embodiment of the present invention, in which a part of a display panel is cut away.

FIG. 5 is a plan view illustrating a phosphor array of a face plate of a display panel according to the present invention.

FIG. 6 is an AA ′ diagram of a display panel according to an embodiment of the present invention.
It is sectional drawing.

FIG. 7 is a schematic sectional view of an antistatic film according to an embodiment of the present invention.

FIGS. 8A and 8B are a plan view and a cross-sectional view, respectively, of a planar type surface conduction electron-emitting device used in an embodiment according to the present invention.

FIG. 9 is a cross-sectional view illustrating a step of manufacturing a planar surface conduction electron-emitting device according to the present invention.

FIG. 10 is an applied voltage waveform in the energization forming process according to the present invention.

FIG. 11 shows an applied voltage waveform (a) and a change (b) in the emission current Ie in the activation process according to the present invention.

FIG. 12 is a sectional view of a vertical surface conduction electron-emitting device used in an embodiment according to the present invention.

FIG. 13 is a cross-sectional view illustrating a process of manufacturing a vertical surface conduction electron-emitting device according to the present invention.

FIG. 14 is a graph showing typical characteristics of a surface conduction electron-emitting device used in an embodiment according to the present invention.

FIG. 15 is a plan view of a substrate of a multi-electron beam source used in an embodiment according to the present invention.

FIG. 16 is a partial cross-sectional view of a substrate of a multi-electron beam source used in an embodiment according to the present invention.

FIG. 17 is a block diagram illustrating a schematic configuration of a drive circuit of the image forming apparatus according to the exemplary embodiment of the present invention.

FIG. 18 is an external view showing a shape of a spacer that can be used in the embodiment according to the present invention.

FIG. 19 is a view for explaining another configuration example of the phosphor according to the present invention.

FIG. 20 is an example of a conventionally known surface conduction electron-emitting device.

FIG. 21 is an example of a conventionally known FE element.

FIG. 22 is an example of a conventionally known MIM element.

FIG. 23 is a perspective view of the display panel of the image forming apparatus with a part cut away.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating member which is a spacer base 2 Antistatic film 3 Deposited carbon 4 Dispersed carbon 5 Semiconductive film 1011, 3111 Substrate 1012, 3112 Cold cathode element 1013, 3113 Row direction wiring 1014, 3114 Column direction wiring 1015 3115 Rear plate 1016, 3116 Side wall 1017, 3117 Face plate 1018, 3118 Phosphor film 1019, 3119 Metal back 1020, 3120 Spacer 1040 Conductive bonding material 1101 Substrate 1102, 1103 Device electrode 1104 Conductive thin film 1105 Electron emitting portion

──────────────────────────────────────────────────続 き Continuation of front page (51) Int.Cl. ⁷ Identification symbol FI H04N 5/68 H01J 1/30 E (56) References JP-A-8-180821 (JP, A) JP-A-9-22649 ( JP, A) JP-A-4-132136 (JP, A) JP-A-8-250032 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 29/87 H01J 31/12

Claims (12)

(57) [Claims] An electron source having an electron emission element; an electrode for controlling electrons emitted from the electron source; a target irradiated with electrons emitted from the electron source; and an electron source and the electrode. In the electron beam apparatus having a spacer disposed between the spacers, the spacer has a high-resistance film on an insulator member, and carbon is dispersed in the high-resistance film, and / or the carbon has an island shape. An electron beam apparatus characterized by being deposited on a substrate. 2. A structure in which the spacer has a layer in which carbon is dispersed in a high resistance film on an insulating member,
The electron beam device according to claim 1, wherein the electron beam device is electrically connected to the electron source and the electrode. 3. The structure according to claim 1, wherein the spacer has a high resistance film on an insulating member, and has carbon formed in an island shape on a surface of the high resistance film. 2. The electrical connection according to claim 1, wherein
An electron beam apparatus according to claim 1. 4. A structure in which the spacer has a layer in which carbon is dispersed in a high-resistance film on an insulating member, and has carbon formed in an island shape on the surface of the high-resistance film. The electron beam apparatus according to claim 1, wherein the electron beam device is provided, and is electrically connected to the electron source and the electrode. 5. The high resistance film has a thickness of 0.1 to 1 × 10 ⁸ Ω.
5. The device according to claim 1, wherein the material has a specific resistance of 0.5 cm.
The electron beam device according to any one of the above. 6. The high-resistance film has a thickness of 50 to 500 nm.
The electron beam apparatus according to any one of claims 1 to 5, wherein 7. The electron beam apparatus according to claim 1, wherein the layer in which carbon is dispersed in the high resistance film has a thickness of at least 10 nm. 8. The electron beam apparatus according to claim 1, wherein the carbon deposited in an island shape on the high resistance film has a particle size of 20 nm or less. 9. The electron source according to claim 1, wherein the electron source has at least one or more element rows in which the electron-emitting devices are arranged, and has a wiring for driving the electron-emitting elements. Electron source. 10. The electron source according to claim 9, wherein said wirings are arranged in a matrix. 11. The electron source according to claim 9, wherein the wiring is arranged in a ladder shape. 12. An image forming apparatus using the electron source according to claim 9, wherein the target forms an image by irradiating at least an electron beam from the electron source. An image forming apparatus comprising: