JP3211961B2 - Target manufacturing method - Google Patents
Target manufacturing methodInfo
- Publication number
- JP3211961B2 JP3211961B2 JP26727390A JP26727390A JP3211961B2 JP 3211961 B2 JP3211961 B2 JP 3211961B2 JP 26727390 A JP26727390 A JP 26727390A JP 26727390 A JP26727390 A JP 26727390A JP 3211961 B2 JP3211961 B2 JP 3211961B2
- Authority
- JP
- Japan
- Prior art keywords
- metal member
- target
- brazing material
- melting point
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 127
- 239000002184 metal Substances 0.000 claims description 127
- 238000000034 method Methods 0.000 claims description 34
- 238000002844 melting Methods 0.000 claims description 24
- 230000008018 melting Effects 0.000 claims description 23
- 238000004880 explosion Methods 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 239000000463 material Substances 0.000 description 57
- 238000005219 brazing Methods 0.000 description 27
- 238000005304 joining Methods 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000013077 target material Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002360 explosive Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000000872 buffer Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- -1 chromium / nickel Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 〔概要〕 本発明は、ターゲットの製造方法に関し、 低融点ロー材からなる半田材を使用したターゲットよ
りも更に清浄にすることができ、かつ、一体型ターゲッ
トよりも低コストで効率良くターゲットを形成すること
ができるターゲットの製造方法を提供することを目的と
し、 被スパッター材となる第１の金属部材を支持する支持
部となる、熱伝導率が該第１の金属部材より大きな第２
の金属部材を所定の形状に加工し、該第１の金属部材を
該第２の金属部材上に、該第１の金属部材よりも高融点
のスペーサを介し爆着法により接合して一体化し、該第
１の金属部材表面を除去して該第１の金属部材の少なく
とも清浄面を露出させるように構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for manufacturing a target, which can be further cleaned than a target using a solder material made of a low melting point brazing material and has a lower level than an integrated target. It is an object of the present invention to provide a method for manufacturing a target capable of efficiently forming a target at a low cost. The first metal member has a thermal conductivity of a first metal member that supports a first metal member to be sputtered. The second larger than the member
Is processed into a predetermined shape, and the first metal member is joined onto the second metal member via a spacer having a higher melting point than the first metal member by an explosion method to be integrated. The first metal member is removed to expose at least a clean surface of the first metal member.
［産業上の利用分野〕 本発明は、主として半導体分野や磁気ディスク関係の
分野で使用する非磁性或いは磁性の金属薄膜をスパッタ
ー法で堆積する時に使用するスパッターターゲットの製
造方法に係わり、特に基板上にアルミ又はアルミを主成
分とする合金系の部材、チタン・ジルコニウム・タング
ステン・モリブデン・金・タンタル・ニオブ・パラジウ
ム・マンガン・銀・亜鉛・ルテニウム・テルル、及び上
記の部材を主成分とする合金等で構成される非磁性金属
薄膜をスパッター法で堆積する時に使用するスパッター
ターゲットの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a sputter target used for depositing a non-magnetic or magnetic metal thin film used in the field of semiconductors and magnetic disks mainly by a sputtering method, and particularly to a method for manufacturing a substrate on a substrate. Aluminum or alloy-based materials containing aluminum as a main component, titanium, zirconium, tungsten, molybdenum, gold, tantalum, niobium, palladium, manganese, silver, zinc, ruthenium, tellurium, and alloys containing the above-mentioned components as main components The present invention relates to a method for manufacturing a sputter target used when depositing a non-magnetic metal thin film formed by a sputtering method or the like.
更に、クロム・ニッケル、及びその合金系の部材やパ
ーマロイ等の磁性を有する金属薄膜をスパッター法で堆
積する時に使用するスパッターターゲットの製造方法
や、チタン・タングステン・モリブデンのシリコン化合
物等の金属薄膜をスパッター法で堆積する時に使用する
スパッターターゲットの製造方法に関する。Further, a method of manufacturing a sputter target used when depositing a magnetic thin film having magnetism such as chromium / nickel and its alloy members or permalloy, and a metal thin film such as a silicon compound of titanium / tungsten / molybdenum. The present invention relates to a method for manufacturing a sputter target used when depositing by a sputtering method.
主として半導体分野や磁気ディスク関係の分野で使用
する非磁性或いは磁性の金属薄膜は、最近ではスパッタ
ー法で成膜することが多くなっている。Recently, non-magnetic or magnetic metal thin films mainly used in the field of semiconductors and magnetic disks are often formed by sputtering.
一方、その薄膜の性質は成膜時の雰囲気に非常に敏感
であり、スパッター処理室内の酸素や窒素・水等の膜質
を劣化させる残留ガス成分はクライオポンプやターボモ
レキュラーポンプといった高真空ポンプを使用して徹底
的に排除した状態で成膜が行われる。最近は、上記の金
属薄膜の性質に対する要求が一層厳しくなってきている
ために、成膜をできるだけ高速で行うことが必要になっ
ている。On the other hand, the properties of the thin film are very sensitive to the atmosphere at the time of film formation, and high vacuum pumps such as cryopumps and turbomolecular pumps are used for residual gas components that degrade the film quality such as oxygen, nitrogen and water in the sputter processing chamber. Then, the film is formed in a state where the film is completely removed. Recently, the requirements for the properties of the above-mentioned metal thin film have become more severe, so that it is necessary to form the film at as high a speed as possible.
ところで、成膜の高速化はスパッターターゲットに投
入する電力（直流・交流）を大きくすれば可能ではある
が、過大な電力を投入するとターゲットの熱変形や溶融
が始まり安定な成膜を維持できなくなる。そこで、効率
的に冷却することができる構造のターゲットの製造方法
が要求されている。By the way, it is possible to increase the speed of film formation by increasing the electric power (DC / AC) applied to the sputter target. However, if excessive electric power is applied, thermal deformation or melting of the target starts, and stable film formation cannot be maintained. . Therefore, there is a demand for a method of manufacturing a target having a structure that can be cooled efficiently.
第７図は現在最も普及している従来のターゲット構造
を説明するための模式的な断面図である。第７図におい
て、31はターゲット本体、32は水等の冷却媒体となる熱
交換媒体、33は支持板、34はターゲット本体31よりも低
融点のロー材からなる半田材である。FIG. 7 is a schematic cross-sectional view for explaining a conventional target structure which is currently most widely used. In FIG. 7, 31 is a target body, 32 is a heat exchange medium serving as a cooling medium such as water, 33 is a support plate, and 34 is a solder material made of a brazing material having a lower melting point than the target body 31.
この構造のターゲットは、被スパッター材となるター
ゲット本体31とその支持板33（銅又は銅合金等）と低融
点ロー材（融点が200℃程度）からなる半田材34から構
成されている。ここで、支持板33は裏面から熱交換媒体
32と接していて、熱伝導率が大きいためスパッター中に
発生する熱量を熱交換媒体32を介して系外に除去する機
能を持つ。The target having this structure includes a target body 31 to be sputtered, a support plate 33 (copper or a copper alloy or the like) thereof, and a solder material 34 made of a low melting point brazing material (having a melting point of about 200 ° C.). Here, the support plate 33 is a heat exchange medium
The heat exchange medium 32 has a function of removing heat generated during sputtering to the outside of the system through the heat exchange medium 32 because of its high thermal conductivity.
次に、そのターゲットの製造方法について説明する。 Next, a method of manufacturing the target will be described.
まず、被スパッター材となるターゲット本体31と支持
部を構成する支持板33（銅又は銅合金等）とを所定の形
状に形成する。First, a target body 31 to be sputtered and a support plate 33 (copper or copper alloy or the like) constituting a support portion are formed in a predetermined shape.
次に、被スパッター材となるターゲット本体31のスパ
ッター面と反対の面（裏面）と支持板33の間にインジウ
ムや錫を主成分とする合金を使用した低融点ロー材から
なる半田材34（10〜100μｍ）を挟んで、200℃程度に加
熱しながら加圧することでターゲット本体31と支持板33
を貼り付ける。Next, a solder material 34 made of a low melting point brazing material using an alloy containing indium or tin as a main component is provided between the support plate 33 and the surface (back surface) opposite to the sputter surface of the target body 31 to be sputtered. The target body 31 and the support plate 33 are pressurized while being heated to about 200 ° C.
Paste.
そして、周辺にはみ出たロー材を除去した後、貼り付
けたターゲット本体31表面の汚染層を洗浄して除去する
ことにより、所望のターゲット本体を得ることができ
る。なお、ロー材からなる半田材34が全面にわたって均
一に貼り付いているかはエックス線又は超音波により検
査して確認する。Then, after removing the brazing material protruding to the periphery, a desired target main body can be obtained by washing and removing the contaminated layer on the surface of the attached target main body 31. It should be noted that whether the solder material 34 made of the brazing material is uniformly adhered over the entire surface is confirmed by inspection using X-rays or ultrasonic waves.
また、低融点ロー材の無いターゲットを製造する例も
ある。本来、被スパッター材は被スパッター部分だけを
基本的に充当すればよいのに対して、この場合には支持
板の部分までもターゲット材と同一の組成や純度の材料
で製作する方法である。この低融点ロー材を使用しない
ターゲットは、支持板の代わりに熱交換媒体で冷却した
支持枠にスパッターターゲットを嵌合挿入し、電力を印
加した時にターゲットを熱膨張させてその側面部で支持
枠に密着させて冷却を図るものである。There is also an example of manufacturing a target without a low melting point brazing material. Originally, the material to be sputtered basically only needs to be applied to the portion to be sputtered, but in this case, even the portion of the support plate is made of a material having the same composition and purity as the target material. The target not using the low-melting brazing material has a sputter target fitted and inserted into a support frame cooled by a heat exchange medium instead of a support plate, and when power is applied, the target is thermally expanded and the side of the support frame is supported. To achieve cooling.
次に、第８図は他の低融点ロー材を使用しない従来例
を説明するためのターゲットの模式断面図である。第８
図において、第７図と同一符号は同一または相当部分を
示し、41はパッキン、42は支持枠である。Next, FIG. 8 is a schematic sectional view of a target for explaining a conventional example in which another low melting point brazing material is not used. 8th
In the figure, the same reference numerals as those in FIG. 7 indicate the same or corresponding parts, 41 is a packing, and 42 is a support frame.
この方法は、ターゲット31を熱交換媒体32で直接冷却
するところから、一般に直冷式と呼称されている。ター
ゲット本体31は裏面周縁部が支持枠42にパッキン41（例
えばＯリング）を介して気密に固定されて真空雰囲気を
保持しており、裏面から熱交換媒体32の直接の接触によ
り冷却されるものである。This method is generally called a direct cooling type because the target 31 is directly cooled by the heat exchange medium 32. The target main body 31 has a back surface peripheral edge portion air-tightly fixed to a support frame 42 via a packing 41 (for example, an O-ring) to maintain a vacuum atmosphere, and is cooled by direct contact of the heat exchange medium 32 from the back surface. It is.
上記した第７図に示す従来のロー材を使用した従来例
では、被スパッター材となるターゲット本体31が支持部
となる支持板33（銅又は銅合金等）と分離していて、タ
ーゲット本体31を所定の比較的単純な形状に形成するこ
とができるという利点があるが、 この低融点ロー材を使用する場合でも過大な電力を投
入すれば、ロー材が溶融し始めて真空雰囲気を汚染し成
膜中の薄膜の品質を劣化させ、場合によってはターゲッ
ト31が剥離始めると異常放電を起こしターゲットが支持
板から滑り落ちることがあり、ロー材からの汚染の不安
があるために、ターゲットに投入できる電力はロー材が
溶解しない範囲に限られていて、膜質の向上が期待でき
ない、 低融点ロー材を用いているために、スパッター装置の
到達真空度を高くできない、 低融点ロー材を用いて接合する工程は、その多くを人
手により行われていて自動化し難く、更にロー材がター
ゲット全面にわたって均一に接合しているかを個々のタ
ーゲットについて検査しなければならない、 といった種々の欠点があった。In the conventional example using the conventional brazing material shown in FIG. 7, the target main body 31 to be sputtered is separated from the support plate 33 (copper or copper alloy or the like) to be a supporting part. This has the advantage that the brazing material can be formed into a predetermined relatively simple shape.However, even when this low melting point brazing material is used, if too much power is applied, the brazing material starts melting and contaminates the vacuum atmosphere. Degradation of the quality of the thin film in the film, and in some cases abnormal discharge occurs when the target 31 begins to peel off, the target may slide off the support plate, and there is concern about contamination from the brazing material. Is limited to the range where the brazing material does not dissolve, and it is not expected to improve the film quality. The low melting point brazing material cannot be used to increase the ultimate vacuum of the sputtering equipment. The process of joining with the use of various methods has many drawbacks, such as the fact that many of them are performed manually and difficult to automate, and furthermore, it is necessary to inspect each target for whether the brazing material is uniformly joined over the entire surface of the target. there were.
一方、上記したロー材の無い一体型の従来例では、 ターゲットの熱膨張を利用する場合は、ターゲットと
支持枠の寸法精度が極めて厳しく、異なる組成のターゲ
ットに対しても熱膨張係数を加味して寸法を変えなけれ
ば安定な冷却をとることがかなり困難であり、更に、こ
の場合にはターゲット側面部で冷却をとるため、側面部
を大きくしなければならず形状に制約が有る、 更に、ターゲットを固定していないので、その膨張収
縮がその上の付着物が剥がれ易くなり、ターゲットと支
持枠間の微少な間隙内のガスが排気し難く、高真空にま
で排気するのに時間を要する、 次に、直冷式のターゲットの場合には、ターゲットの
種類によっては熱交換媒体（通常は水）によって腐食さ
れ易く、長期の使用中にターゲットの冷却効率が低下し
たり、ターゲットの着脱時に傷付け易く、シール面に傷
が付くと熱交換媒体と接する面で気密が困難となる、 貴金属ターゲットの場合や高純度ターゲットの場合で
は、ターゲット費用が余りにも高価になる、 タングステン・モリブデンのように、材料によっては
複雑な形状に加工するのが困難である、といった種々の
欠点があった。On the other hand, in the above-mentioned conventional example without the brazing material, when utilizing the thermal expansion of the target, the dimensional accuracy of the target and the support frame is extremely strict, and the thermal expansion coefficient is taken into account even for targets having different compositions. Unless the dimensions are changed, it is very difficult to achieve stable cooling, and in this case, since cooling is performed on the side surface of the target, the side surface must be enlarged and the shape is limited. Since the target is not fixed, the expansion and contraction of the target makes it easier for the attached matter to peel off, and it is difficult to exhaust the gas in the minute gap between the target and the support frame, and it takes time to exhaust to a high vacuum. Next, in the case of a direct cooling type target, depending on the type of the target, the target is easily corroded by a heat exchange medium (usually water), and the cooling efficiency of the target during long-term use is reduced. The target is easily damaged when the target is attached or detached, and if the seal surface is damaged, it becomes difficult to seal the surface in contact with the heat exchange medium.In the case of a noble metal target or a high-purity target, the target cost becomes too expensive. As with molybdenum, there are various drawbacks such that it is difficult to work into a complicated shape depending on the material.
このように、一体型のターゲットは価格や加工性の点
で、量産で使用するのは現実的ではない。As described above, it is not realistic to use an integrated target in mass production in terms of cost and workability.
何れの従来例もこのような問題を各々抱えていて、高
品質の金属薄膜を安定して成膜するターゲットとしての
使用は困難である。Each of the conventional examples has such a problem, and it is difficult to use it as a target for stably forming a high-quality metal thin film.
上述したように、従来のターゲット製造方法では、ロ
ー材がないことのメリットと加工性を両立しながら、熱
抵抗を小さくする方法がなかった。As described above, in the conventional target manufacturing method, there is no method for reducing the thermal resistance while achieving both the advantage of no brazing material and the workability.
そこで、本発明は、低融点ロー材からなる半田材を使
用したターゲットよりも更に清浄にすることができ、か
つ一体型ターゲットよりも低コストで効率よくターゲッ
トを形成することができるターゲットの製造方法を提供
することを目的としている。Therefore, the present invention provides a method for manufacturing a target which can be further purified than a target using a solder material made of a low melting point brazing material, and which can efficiently form a target at a lower cost than an integrated target. It is intended to provide.
［課題を解決するための手段］ 本発明によるターゲットの製造方法は上記目的達成の
ため、被スパッター材となる第１の金属部材を支持する
支持部となる、熱伝導率が該第１の金属部材より大きな
第２の金属部材を所定の形状に加工し、該第１の金属部
材を該第２の金属部材上に、該第１の金属部材よりも高
融点のスペーサを介し爆着法により接合して一体化し、
該第１の金属部材表面を除去して該第１の金属部材の少
なくとも清浄面を露出させることを特徴とするものであ
る。[Means for Solving the Problems] In order to achieve the above object, a method for manufacturing a target according to the present invention provides a support for supporting a first metal member serving as a material to be sputtered. A second metal member larger than the member is processed into a predetermined shape, and the first metal member is formed on the second metal member by a bombardment method via a spacer having a higher melting point than the first metal member. Joined and integrated,
The method is characterized in that at least a clean surface of the first metal member is exposed by removing a surface of the first metal member.
本発明に係る第１の金属部材には、アルミ又はアルミ
を主成分とする合金、チタン・ジルコニウム・タングス
テン・モリブデン・金・タンタル・ニオブ・パラジウム
・マンガン・銀・亜鉛・ルテニウム・テルル、及び上記
の金属を主成分とする合金、クロム・ニッケル、及びそ
の合金からなる金属、若しくはパーマロイ等の磁性を有
する金属、チタン・タングステン・モリブデンのシリコ
ン化合物の内の少なくとも一つを含有する金属等が挙げ
られる。The first metal member according to the present invention includes aluminum or an alloy containing aluminum as a main component, titanium, zirconium, tungsten, molybdenum, gold, tantalum, niobium, palladium, manganese, silver, zinc, ruthenium, tellurium, and Alloys mainly composed of metals such as chromium / nickel, and metals comprising such alloys, or metals having magnetism such as permalloy, and metals containing at least one of silicon compounds of titanium / tungsten / molybdenum. Can be
本発明に係る第２の金属部材には、銅・チタン・鉄・
アルミ、又は前記の金属を主成分とする合金系等が挙げ
られ、この場合熱伝導が良好で機械的強度が大きく好ま
しい。The second metal member according to the present invention includes copper, titanium, iron,
Aluminum or an alloy system containing the above-mentioned metal as a main component may be mentioned. In this case, heat conduction is good and mechanical strength is large, so that it is preferable.
本発明においては、第１の金属部材の融点が第２の金
属部材の融点より低くなっている場合であってもよく、
この場合、支持部となる第２の金属部材を被スパッター
材となる第１の金属部材よりも熱に対して融解し難くす
ることができ好ましい。In the present invention, the melting point of the first metal member may be lower than the melting point of the second metal member,
In this case, it is preferable that the second metal member serving as the supporting portion is less likely to be melted by heat than the first metal member serving as the material to be sputtered.
本発明において、第１の金属部材と第２の金属部材の
接合方法は、第６図（ａ）に示す爆着法を用いる。な
お、本願発明には相当しないが、他の接合方法には、第
６図（ｂ）に示すHIP法、第６図（ｃ）に示すHOT ROLL
法及び第６図（ｄ）に示すHOT PRESS法等が挙げられ
る。In the present invention, the first metal member and the second metal member are joined by the explosion method shown in FIG. 6 (a). Although not equivalent to the present invention, other joining methods include the HIP method shown in FIG. 6B and the HOT ROLL shown in FIG. 6C.
And the HOT PRESS method shown in FIG. 6 (d).
［作用〕 本発明においては、被スパッター材となる第１の金属
部材と、第１の金属部材の支持部材となる第２の金属部
材と、を容易に接合することができるとともに、低融点
のロー材で接合したターゲットと異なり接合部での剥離
をなくすことができ、加工し難い材料からなるターゲッ
トを製造できるとともに低コストで効率よくターゲット
を形成することができる。[Operation] In the present invention, the first metal member serving as the material to be sputtered and the second metal member serving as the support member for the first metal member can be easily joined together and have a low melting point. Unlike a target joined with a brazing material, peeling at a joint can be eliminated, a target made of a material that is difficult to process can be manufactured, and a target can be efficiently formed at low cost.
まず第１図〜第４図に基づいて、接合の原理を説明す
る。First, the principle of bonding will be described with reference to FIGS.
第１図は接合の原理を説明する図である。第１図にお
いて、1aは被スパッター材となる第１の金属部材、1bは
第１の金属部材1aを支持する支持部となる第２の金属部
材、１は第１の金属部材1a及び第２の金属部材1bから構
成されるターゲット、２は第１の金属部材1a上面を緩衝
する緩衝層、３は火薬、４は雷管である。FIG. 1 is a diagram for explaining the principle of bonding. In FIG. 1, 1a is a first metal member serving as a material to be sputtered, 1b is a second metal member serving as a support for supporting the first metal member 1a, 1 is a first metal member 1a and a second metal member. 2 is a buffer layer that buffers the upper surface of the first metal member 1a, 3 is explosive, and 4 is a primer.
次に、そのターゲットの製造方法について説明する。 Next, a method of manufacturing the target will be described.
ここでは、矩形形状の部材から円板形状のターゲット
を製造する場合を説明するが、その他の形状のターゲッ
トを製造する場合も同様である。Here, a case where a disk-shaped target is manufactured from a rectangular-shaped member will be described, but the same applies to a case where a target having another shape is manufactured.
まず、第１図（ａ）に示すように、被スパッター材と
なる第１の金属部材1aとその支持部となる第２の金属部
材1bを予め比較的単純な形状に加工し、接合面を洗浄し
ておく。ここでは、第１の金属部材1aと第２の金属部材
1bは、共に長さ1000mm・巾500mm・厚さ13mmの平板状に
加工されている。第２の金属部材1bは、例えば無酸素銅
からなり例えばAl−１％Siからなる第１の金属部材1aよ
りも熱伝導率が大きく、機械的強度が大きい。First, as shown in FIG. 1 (a), a first metal member 1a serving as a material to be sputtered and a second metal member 1b serving as a supporting portion thereof are processed in advance into a relatively simple shape, and the joining surface is formed. Wash. Here, the first metal member 1a and the second metal member
1b is processed into a flat plate having a length of 1000 mm, a width of 500 mm, and a thickness of 13 mm. The second metal member 1b is made of, for example, oxygen-free copper and has higher thermal conductivity and mechanical strength than the first metal member 1a made of, for example, Al-1% Si.
次に、第１図（ｂ）に示すように、第１の金属部材1a
及び第２の金属部材1bを３〜5mmの間隔で対向させて第
１の金属部材1aの上面に緩衝層２を設け、更に緩衝層２
上に均一に火薬３を乗せて端部の雷管４より着火する
と、爆発時の衝撃で第１の金属部材1aは第２の金属部材
1bに叩き付けられて接合され、第１の金属部材1a及び第
２の金属部材1bから構成されるターゲット１が形成され
る。この時の第１の金属部材1a及び第２の金属部材1bの
接合界面は振幅と周期が約1mmの規則正しい波形であ
る。したがって、この部分での両者の接触面積は従来の
低融点ロー材からなる半田材を使用した場合よりも大き
くなっていることが判った。更に、引張り強度の評価か
らこの部分での機械的強度が他の部分と比較して遜色無
いことも確認できた。Next, as shown in FIG. 1 (b), the first metal member 1a
And a buffer layer 2 provided on the upper surface of the first metal member 1a so that the second metal member 1b faces each other at an interval of 3 to 5 mm.
When the explosive 3 is evenly placed on the top and ignited from the primer 4 at the end, the first metal member 1a is turned into the second metal member by the impact of the explosion.
The target 1 composed of the first metal member 1a and the second metal member 1b is formed. At this time, the joining interface between the first metal member 1a and the second metal member 1b has a regular waveform having an amplitude and a period of about 1 mm. Therefore, it was found that the contact area between the two at this portion was larger than that in the case where the conventional solder material made of the low melting point brazing material was used. Furthermore, it was also confirmed from the evaluation of the tensile strength that the mechanical strength in this portion was comparable to that of the other portions.
次に、第１図（ｃ）に示すように、最終形状より大き
めに切りだして、爆着接合に用いた火薬３による第１の
金属部材1a上の緩衝層２と第１の金属部材1a表面汚染層
を約3mm除去して第１の金属部材1aの清浄面を露出させ
ると同時に、ターゲット外径を250mm・最大厚さ10mmの
最終形状となるように追加工する。Next, as shown in FIG. 1 (c), the buffer layer 2 on the first metal member 1a and the first metal member 1a formed by the explosive 3 used for the explosion bonding are cut out larger than the final shape. The surface contaminant layer is removed by about 3 mm to expose the clean surface of the first metal member 1a, and at the same time, additional processing is performed so that the target outer diameter becomes 250 mm and the maximum thickness becomes 10 mm.
次に、第１図（ｄ）に示すように、第２の金属部材1b
の表面汚染層を約3mm除去して清浄面を出すと同時に、
外径を260mm・最大厚さ15mmの最終形状とるなるように
追加工すると同時にシール部の加工も行う。Next, as shown in FIG. 1 (d), the second metal member 1b
The surface contamination layer of about 3mm is removed to give a clean surface,
Additional processing is performed at the same time as the final shape with an outer diameter of 260 mm and a maximum thickness of 15 mm.
そして、第１図（ｅ）に示すように、最終形状となっ
たターゲット１を洗浄することにより、所望のターゲッ
ト１を得ることができる。なお、従来の低融点ロー材か
らなる半田材を使用したターゲットの製造方法の場合に
は、接合時の温度や圧力の条件が本発明での条件よりも
緩く、表面の変形や汚染の程度が少ないために、第１図
（ａ）に示す工程での第１の金属部材1aと第２の金属部
材1bの形状は殆ど最終製品の場合と変らないため、従来
のターゲットの製造方法では上記の第１図（ｃ）、
（ｄ）に示す工程は行われない。Then, as shown in FIG. 1 (e), the desired target 1 can be obtained by cleaning the target 1 having the final shape. In the case of a conventional method for manufacturing a target using a solder material made of a low melting point brazing material, the temperature and pressure conditions at the time of joining are looser than those of the present invention, and the degree of surface deformation and contamination is reduced. Because of the small number, the shapes of the first metal member 1a and the second metal member 1b in the step shown in FIG. 1A are almost the same as those of the final product. FIG. 1 (c),
The step shown in (d) is not performed.
第２図はこうして製作したターゲットをスパッター装
置に装着した時のカソード部の模式図である。第２図に
おいて、第１図と同一符号は同一または相当部分を示
し、５は水等からなる熱交換媒体、６は磁石等を含むカ
ソードアセンブリ全体の支持枠、6aはフランジ、７はパ
ッキン（Ｏリング）、８は電磁石、９は熱交換媒体５の
流路、9aは熱交換媒体５入口、9bは熱交換媒体５出口で
ある。FIG. 2 is a schematic view of a cathode portion when the target manufactured in this way is mounted on a sputtering apparatus. 2, the same reference numerals as those in FIG. 1 denote the same or corresponding parts, 5 denotes a heat exchange medium made of water or the like, 6 denotes a support frame of the entire cathode assembly including a magnet or the like, 6a denotes a flange, and 7 denotes a packing ( O ring), 8 is an electromagnet, 9 is a flow path of the heat exchange medium 5, 9a is a heat exchange medium 5 inlet, and 9b is a heat exchange medium 5 outlet.
具体的にはターゲット１対向位置に処理する基板が配
置される（図示せず）。支持枠６は、筐体をなしその開
口部にフランジ6aを有し、内部に、磁石８及びその熱交
換媒体５等が配置されており、ターゲット１となる第２
の金属部材1bを図示の向きに筐体を気密にすべくパッキ
ン７を介してフランジ6aに固定する。更に、フランジ6a
を図示しないスパッターチャンバーに固定して、10-8〜
10-9Torrの高真空になるまでスパッターチャンバーをク
ライオポンプやターボモレキュラーポンプといった高真
空ポンプ（図示せず）を使用して排気する。電磁石８
は、その磁界によりプラズマをターゲット１のスパッタ
ー面近傍に閉じ込めて、スパッター効率を高めるもので
ある（公知のマグネトロンスパッター法）。支持枠６の
底面に熱交換媒体５の入口9a及び出口9bに繋がる熱交換
媒体の流路９が構成されている。支持枠６と電磁石８の
間隔は５〜10mmである。Specifically, a substrate to be processed is arranged at a position facing the target 1 (not shown). The support frame 6 forms a housing, has a flange 6a at an opening thereof, and a magnet 8 and its heat exchange medium 5 and the like are arranged therein.
The metal member 1b is fixed to the flange 6a via the packing 7 so as to make the housing airtight in the illustrated direction. In addition, flange 6a
Fixed to the sputtering chamber (not shown), 10 -8 to
The sputtering chamber is evacuated using a high vacuum pump (not shown) such as a cryopump or a turbo molecular pump until a high vacuum of 10 -9 Torr is reached. Electromagnet 8
Is to increase the sputtering efficiency by confining the plasma near the sputter surface of the target 1 by the magnetic field (known magnetron sputtering method). On the bottom surface of the support frame 6, a flow path 9 for the heat exchange medium connected to the inlet 9a and the outlet 9b of the heat exchange medium 5 is formed. The distance between the support frame 6 and the electromagnet 8 is 5 to 10 mm.
すなわち、第１図に基づいて説明した、接合の原理に
おいては、従来の製造方法と比較して次のような効果が
期待できる。That is, in the bonding principle described with reference to FIG. 1, the following effects can be expected as compared with the conventional manufacturing method.
第２の金属部材1bを、比較的単純な形状に加工してか
ら接合一体化するために、加工し難い材料からなるター
ゲットを製造できる。Since the second metal member 1b is processed into a relatively simple shape and then joined and integrated, a target made of a material that is difficult to process can be manufactured.
被スパッター材となる第１の金属部材1aと支持材とな
る第２の金属部材1bとが分離しているために一体型ター
ゲットよりも低価格でターゲットを製造できる。Since the first metal member 1a serving as the material to be sputtered and the second metal member 1b serving as the support material are separated, the target can be manufactured at a lower price than the integrated target.
低融点ロー材からなる半田材を使用した従来の製造方
法と比較して、ロー材の溶出が無いために加熱しながら
でも有機溶剤での洗浄が行えることや洗浄薬品の選択が
自由となって従来以上にターゲットを清浄にすることが
できる。Compared to the conventional manufacturing method using solder material consisting of low melting point brazing material, since there is no elution of brazing material, cleaning with an organic solvent can be performed while heating and the choice of cleaning chemicals is free. The target can be cleaned more than before.
約1m×2mの大きさで接合して、接合後に所定の大きさ
に切りだすことで複数のターゲットを同時に製造できる
ために、ロー材を使用した従来の一品毎の製造方法と比
較して、ターゲットの製造工程を自動化し、効率的に運
用することができる。Joining in a size of about 1m × 2m, and multiple targets can be manufactured at the same time by cutting out to a predetermined size after joining, compared to the conventional manufacturing method for each item using brazing material, The target manufacturing process can be automated and operated efficiently.
なお、第１図に基づいて説明した、接合の原理におい
ては、第１の金属部材1aと第２の金属部材1bの接合を長
尺物ができ機械的強度の点で好ましい爆着法により行う
場合（接合面に汚れがあっても衝撃波によって緩和され
る）について説明したが、本願発明には相当しないが、
第３図に示すように、HOT PRESS法により接合する場
合、何段も重ねて接合できるため、量産性の点で好まし
い。具体的には、第３図（ａ）に示すように、被スパッ
ター材（Al−１％Si）となる第１の金属部材1aと支持部
（無酸素銅）となる第２の金属部材1bを予め比較的単純
な形状に加工し、接合面を清浄した後、第３図（ｂ）に
示すように、接合しない第１の金属部材1aと第２の金属
部材1b間に相互拡散防止のための緩衝材15を挿入し、第
１の金属部材1aと第２の金属部材1bを例えば温度が300
〜550℃、時間が60分のHOT PRESSにより接合する。こ
の時、第１の金属部材1aと第２の金属部材1b間に２μｍ
程度の拡散層16が形成される。なお、その後の第１の金
属部材1a及び第２の金属部材1bの追加工、洗浄工程につ
いては爆着法と同様である。In addition, according to the principle of joining described with reference to FIG. 1, the joining of the first metal member 1a and the second metal member 1b can be performed by a bombardment method that can form a long object and is preferable in terms of mechanical strength. The case (even if there is dirt on the joining surface is mitigated by the shock wave) has been described, but it does not correspond to the present invention,
As shown in FIG. 3, when joining by the HOT PRESS method, it is preferable in terms of mass productivity, since the joining can be performed in multiple stages. Specifically, as shown in FIG. 3 (a), a first metal member 1a to be a material to be sputtered (Al-1% Si) and a second metal member 1b to be a supporting portion (oxygen-free copper) Is processed into a relatively simple shape in advance, and after the joining surface is cleaned, as shown in FIG. 3 (b), mutual diffusion between the first metal member 1a and the second metal member 1b which are not joined is prevented. For the first metal member 1a and the second metal member 1b at a temperature of, for example, 300
Joining by HOT PRESS at ~ 550 ° C for 60 minutes. At this time, the distance between the first metal member 1a and the second metal member 1b is 2 μm.
A degree of diffusion layer 16 is formed. The subsequent additional processing and cleaning steps for the first metal member 1a and the second metal member 1b are the same as those in the explosion method.
また、本願発明には相当しないが、第４図に示すよう
に、HIP法により接合する場合、HOT PRESS法と同様何
段も重ねて接合できるため量産性の点で好ましい。具体
的には、第４図（ａ）に示すように、被スパッター材
（Al−１％Si）となる第１の金属部材1aと支持部（無酸
素銅）となる第２の金属部材1bを予め比較的単純な形状
に加工し、接合面を清浄した後、第４図（ｂ）に示すよ
うに、第１の金属部材1aと第２の金属部材1bを接触させ
るとともに、接合しない第１の金属部材1aと第２の金属
部材1b間に相互拡散防止のための緩衝材15を挟み込む。
次に、第４図（ｃ）に示すように、ケーシング17内で例
えば温度が350〜550℃、圧力が1000kgf/cm2のHIP処理を
行うことにより、第１の金属部材1aと第２の金属部材1b
を接合する。なお、その後の第１の金属部材1a及び第２
の金属部材1bの追加工、洗浄工程については爆着法と同
様である。Although not equivalent to the invention of the present application, as shown in FIG. 4, when bonding is performed by the HIP method, it can be bonded in multiple stages similarly to the HOT PRESS method, which is preferable in terms of mass productivity. Specifically, as shown in FIG. 4 (a), a first metal member 1a to be a material to be sputtered (Al-1% Si) and a second metal member 1b to be a supporting portion (oxygen-free copper) After previously processing the first metal member 1a and the second metal member 1b, as shown in FIG. 4 (b), A cushioning material 15 for preventing mutual diffusion is sandwiched between the first metal member 1a and the second metal member 1b.
Next, as shown in FIG. 4 (c), for example a temperature in the casing 17 is 350 to 550 ° C., by the pressure performing HIP processing 1000 kgf / cm 2, the first metal member 1a and the second Metal member 1b
To join. The subsequent first metal member 1a and second metal member 1a
The additional processing and cleaning process of the metal member 1b are the same as those of the explosion method.
また、本願発明には相当しないが、第１の金属部材1a
と第２の金属部材1bとをHOT ROLL法により各々例えば1
00〜350℃に加熱したロールに通過させて接合する場
合、長尺物を形成することができ好ましい。Although not equivalent to the present invention, the first metal member 1a
And the second metal member 1b, for example,
In the case of joining by passing through a roll heated to 00 to 350 ° C., a long object can be formed, which is preferable.
以下、本発明に係るターゲットの製造方法を説明す
る。Hereinafter, a method for manufacturing a target according to the present invention will be described.
アルミを主成分とする合金（アルミ合金）で、２％
（重量％）以上のシリコンを少なくとも含む場合（Al−
Si、Al−Si−Ｘ）や１〜10％のマグネシウム（Al−Mg、
Al−Mg−Ｘ）を含むターゲット材となる第１の金属部材
の場合のように、硬い材料では銅の支持板に対して爆着
接合し難い。特にこのような場合、純アルミ・銀・チタ
ンからなるスペーサを第１の金属部材と第２の金属部材
間に挿入し爆着接合する。この時、スペーサーの方がタ
ーゲット材より融点は高い。接合工程はターゲット材の
汚染を防ぐために、最初に銅の支持板とスペーサーを爆
着により接合した後、ターゲット材を爆着接合する。2% with an alloy mainly composed of aluminum (aluminum alloy)
(% By weight) or more silicon (Al-
Si, Al-Si-X) and 1-10% magnesium (Al-Mg,
As in the case of the first metal member serving as the target material containing Al-Mg-X), it is difficult for the hard material to explosively bond to the copper support plate. Particularly in such a case, a spacer made of pure aluminum / silver / titanium is inserted between the first metal member and the second metal member and explosively bonded. At this time, the melting point of the spacer is higher than that of the target material. In the joining step, in order to prevent contamination of the target material, first, the copper support plate and the spacer are joined by explosion, and then the target material is joined by explosion.
また、高純度のアルミ合金ターゲット材となる第１の
金属部材と純度の低い純アルミからなる第２の金属部材
及びスペーサーを爆着接合する場合であってもよい。Alternatively, the first metal member to be a high-purity aluminum alloy target material, the second metal member made of low-purity pure aluminum, and a spacer may be explosively bonded.
本発明は、爆着接合を用いるものであり、本願発明に
は相当しないが、アルミ合金ターゲット材からなる第１
の金属部材1aと銅の支持板の間に、両者に対して馴染み
の良い材料、例えば純銀・チタン・ニッケルからなるス
ペーサを用いて例えばホットロール接合する場合であっ
てもよい。Although the present invention uses explosive bonding and does not correspond to the present invention, a first material made of an aluminum alloy target material is used.
For example, a hot roll bonding may be performed between the metal member 1a and the copper support plate using a spacer familiar to both, for example, a spacer made of pure silver, titanium, and nickel.
また、本発明は、第５図に示すように、第２の金属部
材1bを所定の形状に加工してから、第１の金属部材1aと
第２の金属部材1bを接合し第１の金属部材1aの少なくと
も清浄面を露出させる。この場合、接合前に第２の金属
部材1bを所定の形状に加工するので、被スパッター材と
なる第１の金属部材1aを汚れないようにすることができ
る。具体的には、第５図（ａ）に示すように、第１の金
属部材1aを圧延後円板形状に加工するとともに支持部と
なる第２の金属部材1bを接合面とは反対側の面に熱交換
媒体５を流すための溝を形成した後、第５図（ｂ）、
（ｃ）に示すように、第１の金属部材1aと第２の金属部
材1bを爆着法により接合する。この時、ジャケットタイ
プの支持部となる第２の金属部材1bと緩く噛み合うよう
な変形阻止台18を用意して爆着接合時に第２の金属部材
1bが機械的変形を起こし難くする。そして、既述の方法
により機械加工を行う。Further, as shown in FIG. 5, according to the present invention, after processing the second metal member 1b into a predetermined shape, the first metal member 1a and the second metal member 1b are joined to form the first metal member 1b. At least the clean surface of the member 1a is exposed. In this case, since the second metal member 1b is processed into a predetermined shape before joining, the first metal member 1a serving as a material to be sputtered can be prevented from being stained. More specifically, as shown in FIG. 5 (a), the first metal member 1a is processed into a disk shape after rolling, and the second metal member 1b serving as a support is formed on the opposite side of the joining surface. After forming a groove for flowing the heat exchange medium 5 on the surface, FIG.
As shown in (c), the first metal member 1a and the second metal member 1b are joined by the explosion method. At this time, a deformation prevention table 18 is prepared so as to loosely engage with the second metal member 1b serving as a jacket-type support portion, and the second metal member is used at the time of explosive bonding.
1b hardly causes mechanical deformation. Then, machining is performed by the method described above.
本発明によれば、金属部材が軟らかい材料からなる場
合ばかりでなく、金属部材が硬い材料からなる場合であ
っても、被スパッター材となる第１の金属部材と、第１
の金属部材の支持部材となる第２の金属部材と、を容易
に接合することができるとともに、低融点のロー材で接
合したターゲットと異なり接合部での剥離をなくすこと
ができ、加工し難い材料からなるターゲットを製造でき
るとともに低コストで効率よくターゲットを形成するこ
とができるという効果がある。According to the present invention, not only when the metal member is made of a soft material but also when the metal member is made of a hard material, the first metal member to be sputtered and the first metal member
And a second metal member serving as a support member for the metal member can be easily joined, and unlike a target joined with a low melting point brazing material, separation at a joint portion can be eliminated, and processing is difficult. There is an effect that a target made of a material can be manufactured and the target can be efficiently formed at low cost.
第１図は接合の原理を説明する図、 第２図はターゲットをスパッター装置に装着した時の
図、 第３図、第４図は他の接合の原理を説明する図、 第５図は金属部材の加工を説明する図 第６図は各接合方法を説明する図、 第７図は従来例のターゲット部分の模式断面図、第８図
は他の従来例を説明するためのターゲット部模式断面図
である。 1a……第１の金属部材、 1b……第２の金属部材、 １……ターゲット。FIG. 1 is a diagram for explaining the principle of bonding, FIG. 2 is a diagram when a target is mounted on a sputtering apparatus, FIGS. 3 and 4 are diagrams for explaining other bonding principles, and FIG. FIG. 6 is a diagram for explaining each joining method, FIG. 7 is a schematic cross-sectional view of a target portion of a conventional example, and FIG. 8 is a schematic cross-sectional view of a target portion for explaining another conventional example. FIG. 1a 1st metal member, 1b 2nd metal member, 1 ... target.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 野沢 義晴 千葉県山武郡山武町横田516番地 眞空 冶金株式会社内 (72)発明者 高橋 晧一郎 千葉県山武郡山武町横田516番地 眞空 冶金株式会社内 (56)参考文献 特開 平１−283367（ＪＰ，Ａ) 特開 昭57−156883（ＪＰ，Ａ) 特開 平１−249282（ＪＰ，Ａ) 特開 平１−298159（ＪＰ，Ａ) 特開 平４−131374（ＪＰ，Ａ) ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Yoshiharu Nozawa 516 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Inside Makku Metallurgical Co., Ltd. (72) Inventor Koichiro Takahashi 516 Yokota, Sanmu-cho, Sanmu-gun, Chiba Prefecture Inside Makku Metallurgical Co., Ltd. (56) References JP-A-1-2833367 (JP, A) JP-A-57-156883 (JP, A) JP-A-1-249282 (JP, A) JP-A-1-298159 (JP, A) Kaihei 4-131374 (JP, A)
Claims (1)
持する支持部となる、熱伝導率が該第１の金属部材より
大きな第２の金属部材を所定の形状に加工し、 該第１の金属部材を該第２の金属部材上に、該第１の金
属部材よりも高融点のスペーサを介し爆着法により接合
して一体化し、 該第１の金属部材表面を除去して該第１の金属部材の少
なくとも清浄面を露出させることを特徴とするターゲッ
トの製造方法。A second metal member having a thermal conductivity higher than that of the first metal member and serving as a supporting portion for supporting the first metal member to be sputtered; The first metal member is integrated on the second metal member by explosion bonding via a spacer having a higher melting point than the first metal member, and the surface of the first metal member is removed. A method for manufacturing a target, comprising exposing at least a clean surface of a first metal member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26727390A JP3211961B2 (en) | 1990-10-04 | 1990-10-04 | Target manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26727390A JP3211961B2 (en) | 1990-10-04 | 1990-10-04 | Target manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04143268A JPH04143268A (en) | 1992-05-18 |
| JP3211961B2 true JP3211961B2 (en) | 2001-09-25 |
Family
ID=17442549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26727390A Expired - Lifetime JP3211961B2 (en) | 1990-10-04 | 1990-10-04 | Target manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3211961B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6164519A (en) * | 1999-07-08 | 2000-12-26 | Praxair S.T. Technology, Inc. | Method of bonding a sputtering target to a backing plate |
| US20040262157A1 (en) * | 2003-02-25 | 2004-12-30 | Ford Robert B. | Method of forming sputtering target assembly and assemblies made therefrom |
| JP4533998B2 (en) * | 2003-11-18 | 2010-09-01 | 独立行政法人 日本原子力研究開発機構 | High-temperature isostatic pressing method for dissimilar metal materials with high melting points |
-
1990
- 1990-10-04 JP JP26727390A patent/JP3211961B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04143268A (en) | 1992-05-18 |
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