JP3208073B2 - Semiconductor device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a high-frequency semiconductor device used in a quasi-millimeter to millimeter wave band and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, the technology in the field of information and communication has been remarkably advanced, and the frequency band handled by communication equipment has been actively expanded to higher frequencies from a microwave band to a millimeter wave band. For example, a 60 GHz band is being assigned to a wireless LAN or an automobile collision prevention device in an office. Further, with the increase in the frequency of the system, the speed of the device used and the frequency of the device have been remarkably increased. Recently, a device having a cutoff frequency exceeding 100 GHz, such as a heterojunction compound semiconductor transistor, has been realized.
However, at high frequencies such as microwaves to millimeter waves, not only the characteristics of the transistors,
In order to realize a high-frequency circuit, a mounting method is a new major problem. For example, the effect of parasitic capacitance and inductance during mounting increases in proportion to frequency,
It is necessary to reduce these parasitic reactance components as the frequency becomes higher. Also, in communication equipment that handles the microwave to millimeter wave frequency bands, the physical dimensions of the connection elements at the time of design must be sufficient because the dimensions of the connection elements and the like existing between the members constituting the circuit approach the wavelength of the signal. It needs to be considered. Of course, circuit components such as passive elements and lines require extremely accurate accuracy.

In order to realize such high-precision high-frequency characteristics, passive elements such as inductors, capacitors and resistors and transmission lines are formed on the same semiconductor substrate as transistors, and MMICs (Monolices) are manufactured in a batch by a semiconductor process.
(Thic Microwave Integrated Circuit) is attracting attention and is being actively researched and developed in various places. However, in the MMIC, a passive element and a transmission line occupying most of the chip area are simultaneously manufactured on an expensive substrate (such as a compound semiconductor substrate) for manufacturing an active element, for example, a high-frequency transistor. There is a big problem. Originally,
This is because the cost of the passive element and the transmission line that can be manufactured on an inexpensive substrate is equal to the cost of the high-frequency device.

Further, since the yield of the entire MMIC greatly depends on the yield of transistors as active elements,
The advantage of high yield of passive elements and transmission lines that are originally easy to manufacture cannot be utilized. Furthermore, since the active element, the passive element, the transmission line, and the like are manufactured collectively, the performance of each part cannot be confirmed after the manufacturing. This means
This means that an extremely precise design technique is required, but it is actually difficult to perform a precise impedance design in a high frequency range from quasi-millimeter waves to millimeter waves. This also causes an increase in the cost of the MMIC.

[0005] Therefore, an MFIC (Microwave Fl) in which transistors as active elements are connected by flip-chip bonding on a substrate having a passive circuit and a transmission line.
ip chip Integrated Circuit) has been newly proposed (IEICE, ED94-134, MW94-121, ICD94-196 (1995-0
1), pp. 37-42).

According to this method, the passive circuit and the transmission line portion are separately manufactured, so that they can be manufactured extremely inexpensively, and since individual components can be inspected before connecting the high-frequency transistor, a high yield as a whole IC can be secured.

FIG. 15 is a sectional view of a proposed conventional MFIC. In FIG. 15, the relationship between reference numerals and members is as follows. 2001 is a substrate made of Si or glass, 2002 is a ground conductor film, 2003 is an interlayer insulating film, 2004 and 2005 are wiring conductor films, and 2006 is a contact hole for connecting the wiring conductor film 2004 and the ground conductor film 2002. A wiring board including a passive element and a transmission line is realized by the members. Here, for example, the wiring conductor film 2005 forms an MIM-type capacitor in which the interlayer insulating film 2003 is sandwiched by the ground conductor film 2002, and the wiring that needs to be grounded is connected to the ground conductor film via a contact hole 2006 at an arbitrary place. Grounded to 2002.

Reference numeral 2007 denotes a semiconductor chip on which transistors are formed. Reference numeral 2008 denotes a signal wiring on the chip, which is flip-chip connected to a microstrip line on a wiring board via bumps 2009 to form an MFIC. .

[0009]

As a dielectric film of a microstrip line, an SiO2 film having a small dielectric constant is generally used. In this case, a dielectric film is formed on an underlying ground conductor film made of Au. It is difficult to grow a thick SiO2 film exceeding 10 .mu.m. However,
For example, when a line having a characteristic impedance of 50 Ω is formed, the line width W and the film thickness h are set to be approximately represented by W = 2h in the SiO2 film having this thickness.
If the film is thin, the line width W of the microstrip line must be set thin. For this reason, the resistance of the line increases, and the conductor loss, that is, the conductor loss increases. In addition, the SiO2 film has dielectric loss, that is, tan delta (tan).
δ) is large, about 0.03. As described above, since the conductor loss and the dielectric loss are large, the loss when the high-frequency signal passes through the microstrip line increases.

Therefore, dielectric loss and conductor loss are small,
It is conceivable to improve the characteristics of a microstrip line or the like by using a BCB film, which can easily form a thick film, as a dielectric film.

However, if the BCB film is used as a dielectric film, the BCB film may be peeled off from the ground conductor film during the process,
There have been problems such as the wiring conductor film peeling off from the BCB film, cracking of the BCB film, and thermal deformation. Therefore, as a result of investigating the cause, it was presumed that poor adhesion between the BCB film and the conductor film and poor heat resistance of the BCB film were caused.

The present invention has been made in view of such a problem, and an object of the present invention is to make use of the excellent high-frequency characteristics of a BCB film while taking measures to compensate for the disadvantage that its adhesion and heat resistance are low. Accordingly, an object of the present invention is to provide a highly reliable semiconductor device having excellent high-frequency characteristics and a method for manufacturing the same.

[0013]

In order to solve the above-mentioned problems, the present invention employs a method in which a dielectric film made of a BCB resin is used as a dielectric film, and the dielectric film is formed on one of the upper and lower sides of the BCB film. By providing an insulating thin film, it is to enhance the adhesion between the BCB film and the ground conductor film, and to alleviate the thermal shock stress on the BCB film.

A first semiconductor device according to the present invention is a semiconductor device having a substrate and a wiring substrate having a dielectric film formed thereon, wherein the dielectric film is formed on a part of the substrate. A benzocyclobutene film (hereinafter abbreviated as a BCB film), and an insulating thin film formed on at least one of the upper and lower sides of the BCB film and in contact with the BCB film. Is silicon nitride,
At least one of silicon oxide and silicon oxynitride
It is composed of one of them .

Thus, a dielectric film having excellent adhesion to a lower or upper conductor film and excellent thermal shock resistance can be obtained by a laminated film mainly composed of a BCB film and an insulating thin film. Therefore, various semiconductor devices using this dielectric film can be obtained. Moreover, utilizing the characteristics of silicon nitride, silicon oxide, and silicon oxynitride, which have high adhesion to a conductor film and low thermal conductivity,
The above-mentioned difficulties of the BCB film can be compensated.

A second semiconductor device according to the present invention comprises a substrate,
BCB film (benzocyclobute) formed on a part of the substrate
Film on the BCB film and in contact with the BCB film.
And an insulating thin film formed on the insulating thin film.
A wiring conductor film, wherein at least the wiring conductor film is
In the entire region facing the BCB film, the BCB
The film, insulating thin film and the above-mentioned wiring conductor film are laminated closely together.
Have been.

A third semiconductor device according to the present invention comprises a substrate,
A base conductive film formed on the substrate, and the base conductive film
A BCB film formed thereon, and a BCB film formed above the BCB film
The upper and lower surfaces of the wiring conductor film and the BCB film.
And an insulating thin film formed, the underlying conductive film, B
Microstrip by CB film, insulating thin film and wiring conductor film
Line is configured.

Thus, the adhesion and heat resistance of the BCB film can be improved.
Microstrate with improved dielectric and conductor losses
A lip line will be obtained.

The thickness of the BCB film by greater than 10 [mu] m, smaller dielectric film having the conductor loss can be obtained.

A semiconductor chip having a transistor, a signal wiring formed on a surface of the semiconductor chip and connected to the transistor, and a bump formed on at least one of the signal wiring and the wiring conductor film further comprising the door, and the signal wiring and the wiring conductor film of said semiconductor chip in particular connected via the bumps
More, MFIC having a microstrip line having excellent characteristics as described above can be obtained.

The above case where the insulating film is formed at least between the BCB film and the wiring conductor film, in particular further comprising a thin film resistor formed on the insulating film
Thus , in the MFIC, the thermal shock force acting on the BCB film due to the heat generated by the thin film resistor can be reduced by the insulating thin film, while providing the resistor on the substrate side to reduce the size of the semiconductor chip.

The insulating thin film is formed at least between the BCB film and the wiring conductor film, and a pad region connected to an external member via a wire is formed in a part of the wiring conductor film. By doing so , when wire bonding is performed to the pad region of the wiring conductor film, the absorption of the bonding pressure in the BCB film is reduced by the insulating thin film below the wiring conductor film, so that a highly reliable MFIC can be obtained. .

[0023] A capacitor is further provided, wherein the insulating thin film is formed at least between the BCB film and the wiring conductor film, and a lower portion of the capacitor interposed at a part between the insulating thin film and the BCB film. An electrode film, wherein the wiring conductor film functions as an upper electrode of the capacitor above the lower electrode film, and the insulating thin film is provided between the lower electrode film and the wiring conductor film in a capacitance portion of the capacitor. On the other hand, the insulating thin film which extends to a region other than above the lower electrode film and is interposed between the wiring conductor film and the BCB film, thereby serving as a capacitance portion of a capacitor formed on the substrate. Can be used to improve the adhesion and heat resistance of the BCB film, so that the manufacturing cost of MFIC can be reduced.

In the case where the semiconductor device further includes a pad region formed on a part of the wiring conductor film and connected to an external member via a wire, the pad region is at least 50 μm away from a portion serving as an upper electrode of the capacitor. that you are away
Thereby , a structure that can prevent adverse effects on the capacitor in the wire bonding step is obtained.

In a region other than the upper electrode of the capacitor in the wiring conductor film, a lead portion connected to the lower electrode film via a contact hole formed in the insulating thin film is provided. A pad region connected to an external member via a wire is formed in a part of the lead portion of the conductive film, so that a signal is supplied to a lower electrode of the capacitor and the capacitor becomes a capacitor portion. It is possible to smoothly improve the characteristics of the BCB film using the insulating thin film.

The fourth semiconductor device of the present invention includes a base plate, a base conductive film formed on the substrate, a BCB film formed on at least a portion of the underlying conductive film, the B
A base conductor film formed on the CB film and the BCB
A wiring conductor film forming a microstrip line together with the film, and the wiring conductor film extends to a region on the substrate not covered by the BCB film, and a wire is connected to an external member through this region. A pad region to be connected to the semiconductor device is formed.

Thus, since the BCB film does not exist below the pad region where the wire exists, the wiring conductor film does not peel off when performing wire bonding.
An MFIC using a BCB film and having a microstrip line with small dielectric loss and conductor loss can be obtained.

Most of the underlying conductor film functions as a ground conductor film, and a portion of the underlying conductor film is separated from the majority portion, and a pad region of the wiring conductor film is formed on this portion. With the configuration in which the wiring conductor film is formed so as to be in contact with the wiring conductor film, the underlying conductor film serving as the ground conductor film can be used as a base of the wiring conductor film in the pad region.

According to a fifth semiconductor device of the present invention, there is provided a substrate made of a semiconductor, element isolation formed on the substrate and made of an insulating material, a base conductor film formed on the substrate, A BCB film formed on at least a part of the base conductor film and on a region excluding the element isolation; and a base film formed on the BCB film, the base conductor film and the BC
A wiring conductor film forming a microstrip line together with the B film, and the wiring conductor film extends to a region on the element isolation, and a pad connected to an external member via a wire in this region. A region is formed.

As a result, an MFIC having a pad region insulated from the ground conductor film is obtained by utilizing element isolation required when a semiconductor element is formed on a semiconductor substrate.

The above substrate is made of Si or glass
This makes it possible to obtain an inexpensive MFIC with good characteristics.

[0032] The semiconductor chip is either formed of a compound semiconductor containing GaAs, it is preferably formed of a semiconductor having a heterojunction.

[0033] The transistor by a high-frequency transistor for use in submillimeter-wave-millimeter wave, incorporates a transistor having excellent high frequency characteristics MFIC
Can be obtained.

According to a sixth aspect of the present invention, there is provided a semiconductor device comprising: a wafer-like substrate; a base conductor film formed on the substrate; a BCB film formed on at least a part of the base conductor film; A wiring conductor film that is formed on the BCB film and constitutes a microstrip line together with the base conductor film and the BCB film; and an area to be scribed for dividing the substrate into a plurality of substrate chips includes: The BCB film does not exist, and the BCB film is divided for each of the substrate chips.

Thus, in the semiconductor device manufacturing process, the structure is such that the BCB film is not involved in the cutter blade at the time of dicing, so that the life of the cutter blade can be extended and the cost can be reduced.

The first method of manufacturing a semiconductor device according to the present invention comprises:
A first step of forming a base conductive film on the base plate, the second forming a BCB film on at least a portion of the underlying conductive film
And a third step of forming a wiring conductor film on the BCB film, and at least one of before and after the second step, forming an insulating thin film in contact with the BCB film. and a step, the step of forming the insulating film, the insulating film of silicon nitride, be constituted by at least any one of silicon oxide and silicon oxynitride preferred.

According to this method, the BCB in the manufacturing process
Peeling of the film from the underlying conductive film and peeling of the wiring conductive film from the BCB film can be prevented.

In the third step, the wiring conductor film can be formed as a multilayer metal wiring layer.

According to the second method of manufacturing a semiconductor device of the present invention ,
Preparing a semiconductor chip having a signal wire connected to a preparative transistor and the transistor, and forming a bump on the desired position on the at least one of the wiring conductor layer and the signal line, Connecting the signal wiring of the semiconductor chip and the wiring conductor film via the bump.

According to this method, an MFIC having a strip line composed of a laminated film of a BCB film and an insulating thin film having excellent adhesion and heat resistance as described above can be formed.

The method further comprises a dicing step for dividing the substrate into a plurality of substrate chips. In the second step, the BCB film is formed so that the BCB film does not exist in a region to be scribed in the dicing step. can do.

[0042]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment is directed to a benzocyclobutene having a smaller dielectric constant and a lower dielectric loss tangent than a silicon oxide film.
ne, hereinafter abbreviated as BCB) is an MFIC using a film composed of an interlayer insulating film. FIG. 1 shows a cross-sectional structure of an MFIC using a BCB film and a cross-sectional view of a manufacturing process thereof.

In FIG. 1, the relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si or the like, and 502 denotes a Ti / A formed on the substrate 501.
A ground conductor film made of a u / Ti laminated film, 504 is a BCB film formed on the ground conductor film 502, and 506 is a first wiring made of a Ti / Au / Ti laminated film formed on the BCB film 504 It is a conductor film. The first wiring conductor film 5
A part of 06 is a lower electrode of the capacitor. 507 is the first wiring conductor film 506 and the ground conductor film 50
2, 508 is an interlayer insulating film serving as a capacitor of the capacitor, and 509 is a second wiring conductor film partially formed of a Ti / Au / Ti laminated film serving as an upper electrode of the capacitor. . This ground conductor film 502, B
With the CB film 504 and the wiring conductor film 506 or 509,
A microstrip line is formed. Also, 51
Reference numeral 1 denotes a semiconductor chip on which a transistor is formed. The transistor is a high-frequency heterojunction field-effect transistor having a cutoff frequency of 120 MHz used in a quasi-millimeter wave band to a millimeter wave band. Reference numeral 512 denotes a signal wiring on the semiconductor chip 511, and reference numeral 513 denotes a bump for connecting the wiring conductor film 506 or 509 on the substrate 501 to the signal wiring 512 on the semiconductor chip 511. Bump 513
, The semiconductor chip 511 is flip-chip connected to the microstrip line on the substrate 501, and the MFIC
Is formed.

Hereinafter, the manufacturing process of the MFIC of this embodiment will be described.

First, as shown in FIG.
1 as a ground conductor film 502 such as Ti / Au / Ti
The laminated films are formed so that their respective thicknesses are about 50/1000/50 nm, and a BCB film 504 having a thickness of about 10 μm is formed thereon.

Next, as shown in FIG. 1B, a contact hole 507 for connection to the ground conductor film 502 is formed in the BC.
It is formed at a desired position on the B film 504.

Next, as shown in FIG. 1C, for example, a Ti / Au / Ti laminated film is formed as a first wiring conductor film 506 having a desired pattern and partially serving as a lower electrode of a capacitor. Then, for example, a silicon nitride film is formed as an interlayer insulating film 508 for the MIM capacitor on the entire surface of the substrate.

Next, as shown in FIG. 1D, after the interlayer insulating film 508 is processed into a desired pattern, for example, Ti /
After depositing the Au / Ti laminated film, the laminated film is patterned to form a second wiring conductor film 509 which partially becomes the upper electrode of the capacitor.

Next, as shown in FIG. 1E, a height of 10 μm is set at a desired position on the wiring conductor film 506 or 509.
The bumps 513 of the order are formed.

Next, as shown in FIG. 1F, the bump 513 is connected to the signal wiring 512 on the semiconductor chip 511 to complete the MFIC.

As described above, by using the BCB film as the dielectric film, the insertion loss in the transmission line of the MFIC can be reduced.

(Second Embodiment) In the first embodiment, the BCB film thickness is good up to about 10 μm. However, in order to further reduce the insertion loss, if the BCB film thickness is further increased, the formation conditions of the BCB film are changed. Even if optimization is performed, the adhesion between the BCB film and the ground conductor film is poor, and in the worst case, peeling may occur. Therefore, in the following embodiments, a semiconductor device that does not peel even when the thickness of the BCB film is increased will be described.

FIGS. 2 and 3 (a) to 3 (f) show a semiconductor device according to a second embodiment and a method of manufacturing the same.
This will be described with reference to FIG. 2 and 3 (a)-
(D) is sectional drawing which respectively shows the structure and manufacturing process of MFIC concerning 2nd Embodiment.

In FIGS. 2 and 3, the relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si, or the like; 502, a ground conductor film formed of a Ti / Au / Ti laminated film formed on the substrate 501;
Is an insulating thin film made of a silicon oxide film formed on the ground conductor film 502, 504 is a benzocyclobutene resin film (hereinafter abbreviated as BCB film) formed on the insulating thin film 503, 506 is a BCB film 504 Au formed on top of
The wiring conductor film is made of The ground conductor film 502, the insulating thin film 503, the BCB film 504, and the wiring conductor film 506 form a microstrip line. Reference numeral 507 denotes a contact hole for connecting the wiring conductor film 506 and the ground conductor film 502; 511, a semiconductor chip having a transistor formed therein; 512, signal wiring on the semiconductor chip 511;
1 is a bump for connecting the microstrip line on 1 to the signal wiring 512 on the semiconductor chip 511.

Next, a manufacturing process for realizing the MFIC shown in FIG. 2 will be described.

First, as shown in FIG.
01, for example, Ti / Au as a ground conductor film 502
/ The thickness of each Ti laminated film is 50/1000/5
The insulating thin film 50 is formed so as to have a thickness of about 0 nm.
As No. 3, for example, a silicon oxide film is deposited with a thickness of about 300 nm.

Next, as shown in FIG. 3B, a BCB film 504 is formed to a thickness of 20 μm, and the BCB film 504 and the insulating thin film 503 are dry-etched with a CF 4 / O 2 mixed gas to form contact holes at desired positions. 507 is formed.

Next, as shown in FIG. 3C, a wiring conductor film 506 having a desired pattern is formed on the contact hole 507 and the BCB film 504 by Au plating to a thickness of 2 μm.
m.

Thereafter, as shown in FIG. 3D, bumps 513 are formed at desired positions of the wiring conductor film 506 by plating, and bumps are formed on the signal wirings 512 of the semiconductor chip 511 incorporating a transistor such as a HEMT. 513 are connected by flip chip mounting to complete the MFIC.

In this embodiment, the BCB film 504 and the insulating thin film 50 are interposed between the BCB film 504 and the ground conductor film 502 with the insulating thin film 503 made of a silicon oxide film interposed therebetween.
3 form a dielectric film of the microstrip line. The adhesion of the silicon oxide film to the BCB film is excellent, and even if the thickness of the BCB film is about 30 μm,
Both show good adhesion without peeling. The grounds will be described below.

FIGS. 4 (a) and 4 (b) are diagrams showing the results of measuring the adhesion of the film using a scratch tester. FIG. 4A shows the result of measuring the adhesion by changing the type of film formed on the ground conductor film serving as the base, and FIG.
FIG. 4 is a diagram showing the results of measuring the adhesion by changing the type of the film serving as the base of the BCB film. In FIG. 3A, the vertical axis represents the load applied to the needle by the film peeled off during scanning of the needle of the scratch tester, and the horizontal axis represents the scanning distance of the needle. In the figures (a) and (b), the characteristic line C1 is
A BCB film having a thickness of 20 μm is formed on the ground conductor film 502,
The characteristic line C2 indicates the adhesiveness when formed on the i / Au / Ti laminated film (1 μm thick).
The characteristic line C3 indicates the adhesion when a silicon oxide film (300 nm thick) was formed on the ground conductor film, and the characteristic line C4 indicates the silicon nitride film ( The characteristic line C5 shows the adhesion when a BCB film having a thickness of 20 μm was formed on a silicon oxide film (300 nm thick), and the characteristic line C6 shows the thickness when the BCB film having a thickness of 300 nm was formed on the ground conductor film. It is a characteristic view which shows the adhesiveness at the time of forming a 20-micrometer BCB film on a silicon nitride film (thickness of 300 nm). Referring to FIG.
The adhesion of the BCB film on the u / Ti laminated film is poor.
It can be seen that the adhesion is extremely low when the thickness of the CB film is 20 μm. On the other hand, it can be seen that the silicon oxide film and the silicon nitride film on the ground conductor film and the BCB film on the silicon oxide film and the silicon nitride film have sufficient adhesion. Accordingly, it can be seen that the BCB film can be effectively prevented from peeling off from the ground conductor film by interposing the silicon oxide film or the silicon nitride film between the ground conductor film and the BCB film.

Note that the method of the first embodiment also uses the BCB
From this evaluation result, it can be confirmed that a certain degree of adhesion can be secured without interposing another insulating film such as a silicon oxide film up to a thickness of the film 504 of about 10 μm. However, even in this case, there is an advantage that the adhesion of the BCB film to the base can be further strengthened by interposing an insulating thin film such as a silicon oxide film under the BCB film.

In this embodiment, the contact holes 5
When the dry etching for forming the semiconductor thin film 07 is performed, the insulating thin film 503 made of a silicon oxide film is
Since etching can be performed under the same gas and under the same conditions as in the step 04, processing can be performed by a single etching and the number of steps does not increase.

(Third Embodiment) In the second embodiment, the case where the insulating thin film is formed below the BCB film has been described, but in the third embodiment, the BCB is formed.
An insulating thin film is formed on the film.

FIGS. 5 and 6 (a) to 6 (e) are cross-sectional views showing the structure and manufacturing process of the MFIC according to the third embodiment, respectively.

In FIGS. 5 and 6 (a) to 6 (e),
The relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si, or the like, and 502 denotes a substrate 501.
A ground conductor film 504 formed of a Ti / Au / Ti laminated film formed on the ground conductor film 502 formed on the ground conductor film 502
A CB film, 505 is an insulating thin film made of a silicon oxide film formed on the BCB film 504, and 506 is an insulating thin film 505.
Is a wiring conductor film made of Au formed on the substrate. The ground conductor film 502, the BCB film 504, the insulating thin film 505, and the wiring conductor film 506 form a microstrip line. 507 is a contact hole for connecting the wiring conductor film 506 and the ground conductor film 502;
510 is a thin film resistor formed on the insulating thin film 505,
Reference numeral 511 denotes a semiconductor chip having a transistor formed therein, and 512 denotes a signal wiring on the semiconductor chip 511.
Reference numeral 14 denotes a bump for connecting the microstrip line on the glass substrate 501 to the signal wiring 512 on the semiconductor chip 511.

Hereinafter, the manufacturing process of the MFIC of this embodiment will be described.

First, as shown in FIG. 6A, a ground conductor film 502 such as Ti
/ Au / Ti laminated film having a thickness of 50/1000
And a BCB film 504 is formed thereon with a thickness of about 20 μm.

Next, as shown in FIG. 6B, a silicon nitride film, for example, having a thickness of 300 nm is formed as an insulating thin film 505 on the entire surface.
A thin film resistor 510 made of, for example, a NiCr thin film is formed thereon.

Next, as shown in FIG. 6C, the insulating thin film 505 and the BCB film 504 are dry-etched with a mixed gas of CF 4 / O 2 and the contact hole 50 is formed at a desired position.
7 is formed.

Next, as shown in FIG. 6D, Au is formed in the contact hole 507 and on the insulating thin film 505.
The wiring conductor film 506 having a desired pattern is formed by plating to a thickness of 2 μm.
It is formed with a thickness of about m.

Thereafter, as shown in FIG. 6E, bumps 513 are formed at desired positions on the wiring conductor film 506 by plating, and the bumps 513 are connected to the signal wirings 512 of the semiconductor chip 511 by flip-chip mounting. MFIC
To complete.

In the present embodiment, the insulating thin film 505 (for example, a silicon nitride film) which forms a dielectric film together with the BCB film 504 has a function of enhancing the adhesion of the NiCr thin film which forms the thin film resistor 510 and a function of strengthening the NiCr thin film. Heat of BC
It has a function as a protective film for preventing transmission to the B film. Therefore, heat generated from the thin film resistor 510 is generated by the BCB film 5.
Since the BCB film 504 is not easily transmitted to the B.C.F. 04, the BCB film 504 does not crack or deform due to thermal shock, and a highly reliable MFIC can be realized.

The insulating thin film 505 is formed on the semiconductor chip 51.
1 or 2 in flip chip bonding
Of the wiring conductor film 506 or 509. This prevents the bonding pressure from being transmitted to and absorbed in the BCB film 504, and an appropriate pressure is applied to the bump, so that the bonding is performed well.

Fourth Embodiment In the second embodiment, the case where the insulating thin film is formed below the BCB film, and in the third embodiment, the case where the insulating thin film is formed above the BCB film, respectively, is explained. In the embodiment, an insulating thin film is formed below and above the BCB film.

FIGS. 7 and 8 (a) to 8 (e) are cross-sectional views showing the structure and manufacturing process of the MFIC according to the fourth embodiment, respectively.

In FIGS. 7 and 8, the relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si, or the like; 502, a ground conductor film formed of a Ti / Au / Ti laminated film formed on the substrate 501;
Denotes a first insulating thin film made of a silicon oxide film formed on the ground conductor film 502, and 504 denotes a first insulating thin film 503.
505 is a second insulating thin film made of a silicon oxide film formed on the BCB film 504, and 506 is A formed on the second insulating thin film 505.
This is a first wiring conductor film made of u. Note that part of the first wiring conductor film 506 serves as a lower electrode of the capacitor. 507 is a contact hole for connecting the first wiring conductor film 506 and the ground conductor film 502;
Is an interlayer insulating film which becomes a capacitor of the capacitor, and 509 is a second wiring conductor film which partially becomes an upper electrode of the capacitor. The ground conductor film 502, the first and second insulating thin films 5
03 and 505, BCB film 504 and wiring conductor film 506
Or 509, a microstrip line is formed. Reference numeral 510 denotes a thin film resistor formed on the second insulating thin film 505, and reference numeral 511 denotes a semiconductor chip on which a transistor is formed. The transistor has a cut-off frequency used in a quasi-millimeter wave to a millimeter wave band, for example. 120
It is a heterojunction type field effect transistor for high frequency of MHz. 512 is a signal wiring on the semiconductor chip 511, 513 is a wiring conductor film 506 or 50 on the substrate 501.
9 and bumps for connecting the signal wiring 512 on the semiconductor chip 511.

Hereinafter, the manufacturing process of the MFIC of this embodiment will be described.

First, as shown in FIG.
1 as a ground conductor film 502 such as Ti / Au / Ti
A laminated film is formed so that the thickness of each is about 50/1000/50 nm, and a first insulating thin film 503 is formed thereon.
For example, a silicon oxide film is formed with a thickness of 300 nm. Furthermore, a BCB having a thickness of about 26 μm
A film 504 and a second insulating thin film 505 made of a silicon nitride film having a thickness of about 300 nm are formed.

Next, as shown in FIG.
After a thin film resistor 510 made of an iCr thin film is formed on the second insulating thin film 505, the second insulating thin film 505, the BCB film 504, and the first insulating thin film 503 are converted to CF4 /
Dry etching is performed with an O2 mixed gas to form a contact hole 507 at a desired position.

Next, as shown in FIG. 8C, a first wiring made of a Ti / Au film having a desired pattern and having a thickness of about 1 μm is formed in the contact hole 507 and on the second insulating thin film 505. A conductive film 506 is formed.

Next, as shown in FIG. 8D, a 200-nm-thick silicon nitride film having a desired pattern is formed as an interlayer insulating film 508 for the MIM capacitor on the entire surface of the substrate, and is then plated by Au plating. The second wiring conductor film 509 having the above pattern is formed. A part of the second wiring conductor film 509 serves as an upper electrode of the MIM capacitor.

Next, as shown in FIG. 8E, a bump 513 having a height of about 10 μm is formed at a desired position on the first or second wiring conductor film 506 or 509, and then formed on the semiconductor chip 511. The above-mentioned bump 513 is connected to the signal wiring 512 of FIG.

In the present embodiment, the first and second insulating thin films 503 and 505 above and below the BCB film 504 are BCB films, respectively.
Adhesion between film 504 and ground conductor film 502 and BCB film 5
It functions to enhance the adhesion between the first and second wiring conductor films 506 and 509. Further, the second insulating thin film 505 on the BCB film 504 also has a function as a protective film for preventing heat generated from the NiCr thin film constituting the thin film resistor 510 from being transmitted to the BCB film 504.
Is difficult to transmit to the BCB film 504,
There is no thermal deformation or cracking due to thermal shock of the B film 504,
A highly reliable MFIC can be realized. Further, the second insulating thin film 505 functions as a holding material for the first or second wiring conductor film 506 or 509 when the semiconductor chip 511 is flip-chip bonded. This prevents the bonding pressure from being transmitted to and absorbed in the BCB film 504, and an appropriate pressure is applied to the bump, so that the bonding is performed well.

(Fifth Embodiment) Next, a fifth embodiment will be described. In the present embodiment, the illustration of the structure of the semiconductor device is omitted, and the manufacturing process will be described with reference to FIGS. FIGS. 9A to 9E show MFs according to the fifth embodiment.
FIG. 4 is a cross-sectional view illustrating a manufacturing process of the IC. In FIG.
The relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si, or the like, and 502 denotes a substrate 501.
503 is an insulating thin film made of a silicon oxide film formed on the grounding conductive film 502, and 504 is an insulating thin film 50 made of a Ti / Au / Ti laminated film formed thereon.
3, a BCB film 506 is formed on the BCB film 504.
Is a wiring conductor film made of Au formed on the substrate. 507 is the first wiring conductor film 506 and the ground conductor film 50
A contact hole 520 for connecting the wiring conductor film 2 to the wiring conductor film 506 and the ground conductor film 502 is a metal buried layer. The ground conductor film 502 and the insulating thin film 50
3. A microstrip line is formed by the BCB film 504 and the wiring conductor film 506. Reference numeral 511 denotes a semiconductor chip on which a transistor is formed, and a cutoff frequency used in a quasi-millimeter wave to millimeter wave band is 120M
Hz is a heterojunction field effect transistor for high frequency. 512 is a signal wiring on the semiconductor chip 511;
Reference numeral 513 denotes a bump for connecting the wiring conductor film 506 on the substrate 501 and the signal wiring 512 on the semiconductor chip 511.

Hereinafter, the manufacturing process of the MFIC of this embodiment will be described.

First, as shown in FIG.
1 as a ground conductor film 502 such as Ti / Au / Ti
The laminated films are formed so that their respective thicknesses are about 50/1000/50 nm, and a silicon oxide film, for example, having a thickness of 300 nm is formed thereon as the insulating thin film 503.

Next, as shown in FIG. 9B, a BCB film 504 is formed with a thickness of 20 μm, and the insulating thin film 505, the BCB film 504, and the silicon oxide film 503 are formed of CF4 /
Dry etching is performed with an O2 mixed gas to form a contact hole 507 at a desired position.

Next, as shown in FIG. 9C, the contact hole 5 is formed by selective plating using the ground conductor film 502 exposed in the contact hole 507 as a seed metal.
07, a metal buried layer 520 is formed.

Next, as shown in FIG. 9D, the Au on the metal buried layer 520 and the BCB
Wiring conductor film 506 having a desired pattern on film 504
Is formed with a thickness of 1 μm.

Next, as shown in FIG. 9E, bumps 513 are formed at desired positions of the wiring conductor film 506 by Au plating, and signal wirings 512 of a semiconductor chip 511 containing a transistor made of, for example, HEMT are formed. Wiring conductor film 50
6 and flip-chip connected to complete the MFIC.

In this embodiment, since the insulating thin film 503 is introduced to enhance the adhesion of the thick BCB film 504,
The same effects as in the above embodiments can be obtained.

In addition, the following effects can be obtained by introducing a step of filling the contact holes with metal by selective plating. In other words, integration of MFICs using a BCB film as a dielectric film will progress in the future, and transmission line patterns will be further miniaturized. With it BC
It is considered that the ground contact of the B film becomes finer and the aspect ratio of the contact hole becomes considerably large. If the aspect ratio of the contact hole becomes large, it is difficult to form the wiring conductor film with good coverage. Therefore, a process of filling the contact hole for grounding with metal by selective plating is newly introduced. As a result, the contact hole having a large aspect ratio, that is, a small and deep contact hole can be filled with the buried metal layer, and the subsequent step of forming the wiring conductor film can be performed extremely easily.

(Sixth Embodiment) Next, a sixth embodiment will be described. The present embodiment relates to a configuration in which an insulating thin film is provided under a bonding pad of a wiring conductor film. FIG. 10 is a cross-sectional view of the wiring board according to the present embodiment.

In FIG. 10, the relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si, or the like, and 502 denotes a Ti / Ti formed on the substrate 501.
A ground conductor film made of an Au / Ti laminated film, 504 is a BCB film formed on the ground conductor film 502, and 505 is a BCB film
An insulating thin film 506 formed on the film 504 is a wiring conductor film made of Au formed on the insulating thin film 505. The pad portion 531 of the wiring conductor film 506 includes
Wire 530 is connected.

Although not shown, a semiconductor chip including a transistor such as a HEMT is flip-chip connected to the substrate 501 in a region other than the cross section shown in FIG.

In this embodiment, at least the pad portion 53 to which the wire 530 is connected in the wiring conductor film 506 is formed.
By providing the insulating thin film 505 on the first base, it is possible to effectively prevent the wiring conductor film 506 from peeling off from the BCB film 504 when bonding the wire 530 to the microstrip line.

(Seventh Embodiment) Next, a seventh embodiment will be described. FIG. 11 is a cross-sectional view of the semiconductor device according to the present embodiment. However, since FIG. 11 shows a structure in a region different from the region where the semiconductor chip is mounted, the semiconductor chip is not shown.

In FIG. 11, the relationship between reference numerals and members is as follows. Reference numeral 501 denotes a substrate made of glass, Si, or the like, and 502 denotes a Ti / Ti formed on the substrate 501.
A ground conductor film made of an Au / Ti laminated film, 504 is a BCB film formed on the ground conductor film 502, and 506 is a BCB film
A first wiring conductor film made of Au formed on the film 504, an interlayer insulating film 508 serving as a capacitance portion of a capacitor formed of a silicon oxide film, a silicon nitride film, or the like;
Reference numeral 09 denotes a second wiring conductor film made of Au. And
The first wiring conductor film 506 serves as a lower electrode, the interlayer insulating film 508 serves as a capacitor, and a portion 509 of the second wiring conductor film.
An MIM capacitor having a as an upper electrode is formed. In addition, the interlayer insulating film 508 of the capacitor is formed not only in the portion to be the capacitor of the capacitor but also over the entire BCB film 504.
Thus, similar to the insulating thin film in each of the above embodiments, the configuration is such that the adhesion between the second wiring conductor film 509 and the BCB film 504 is improved. Further, a part 509b of the second wiring conductor film is connected to the first wiring conductor film 506 through an opening provided in a part of the interlayer insulating film 508. A pad portion 531 is formed on a part 509b, and the wire portion 53
0 is connected. However, the second wiring conductor film 509
, The pad portion 531 is 50 μm from the capacitor.
The distance D1 is provided. In regions other than the capacitor, the ground conductor film 502, the BCB film 5
04, the interlayer insulating film 508 and the second wiring conductor film 509 constitute a microstrip line.

The first wiring conductor film 506 has a microstrip line together with the BCB film 504 and the ground conductor film 502 without having a film functioning as an insulating thin film as a base. Although not shown, in a region other than the cross section shown in FIG.
A semiconductor chip containing a transistor such as an EMT is flip-chip connected.

In a conventional MFIC structure, when forming an MIM capacitor on a substrate, an interlayer insulating film serving as a capacitance portion of the capacitor is formed only between the upper and lower electrodes of the capacitor and a peripheral portion thereof. In contrast, in the present embodiment,
Insulating film (interlayer insulating film 508) serving as a capacitor of the capacitor
Is formed over the entire BCB film 504 outside the capacitor, and the insulating thin film 5 according to the sixth embodiment is used by utilizing the insulating film necessary for the capacitor.
As in the case of the method 05, it is possible to effectively prevent the wiring conductor film 509 from being peeled off from the BCB film 504 when bonding the wire 530. Therefore, in this embodiment, it is not necessary to increase the number of steps for forming an insulating thin film for enhancing the adhesion of the wiring conductor film to the BCB film. Therefore, there is an advantage that the manufacturing cost can be further reduced as compared with the sixth embodiment.

(Eighth Embodiment) Next, an eighth embodiment will be described. FIG. 12 (a)
And FIG. 13 are a cross-sectional view and a plan view of the semiconductor device according to the present embodiment. However, FIG. 12A is a cross-sectional view taken along line II-II of a rectangular substrate chip 501a cut out from the wafer-like substrate 501 shown in FIG.

In FIG. 12A, the relationship between reference numerals and members is as follows. 501 is a substrate made of glass, and 502 is Ti / A formed on the substrate 501.
A ground conductor film made of a u / Ti laminated film, 504 is a BCB film formed on the ground conductor film 502, and 506 is a wiring conductor film made of Au formed on the BCB film 504. In this embodiment, a portion 502x of the ground conductor film 502 is separated from other portions and is insulated from the ground, and the portion 502x is a pad portion 531. In the pad portion 531, BCB is provided below the wiring conductor film 506 to which the wire 530 is connected.
Film 504 is not present.

On the other hand, as shown in FIG. 13, a microstrip line or the like is formed on each of a number of rectangular substrate chips 501a cut out from a wafer-like substrate 501. FIG. 13 shows that the pad portion 531 is separated from the ground conductor film 502. On the substrate 501, Rbcb indicates a formation region of the BCB film 504, and Rscrb indicates a scribe line. That is, the configuration is such that the BCB film 504 does not exist in the scribe line Rscrb.

In this embodiment, the wafer-like substrate 5
The semiconductor chip 511 is flip-chip connected on each substrate chip 501a before each substrate chip 501a is cut out from the substrate chip 501, but after the substrate chip 501a is cut out from the wafer-shaped substrate 501, the semiconductor chip 51 is cut out.
1 may be flip-chip connected to the wiring conductor film 506 on each substrate chip 501a.

In the present embodiment, the following effects can be obtained.

First, in the pad portion 531 for connecting the wire 530, the wiring conductor film 506 is formed by a part 502 of the ground conductor film 502 without the BCB film 504.
It is formed on the substrate 501 via x. Therefore, the adhesion of the wiring conductor film 506 to the base can be maintained even higher than in the above embodiments, and peeling of the wiring conductor film 506 during wire bonding can be more reliably prevented.

Second, by patterning the ground conductor film 502, the wiring conductor film 506 in the pad portion 531 is formed.
Can be easily formed.

Third, BCB is added to the scribe line Rscrb.
Since the film 504 is not present, when the wafer-shaped substrate 501 is divided into rectangular substrate chips 501a by dicing, the BCB resin does not get caught in the cutter blade, and the life of the cutter blade is improved, and Maintenance is also easy.

Fourth, since no stress is applied to the BCB film 504 itself during dicing, the BCB film 50
4 does not damage the wiring conductor film 506.

Fifth, by dividing the BCB film 504 into small pieces in the wafer state, the stress applied to the BCB film itself is reduced, so that the BCB film is less likely to crack and partially cracked. Is prevented from spreading to other parts even if the occurrence occurs, the production yield is also improved.

FIG. 12B is a modified example of the present embodiment, and is a cross-sectional view showing a structure when the substrate 501 is made of Si. In this case, after forming an insulating thin film 503 made of a silicon oxide film or the like on the substrate 501,
On this insulating thin film 503, a ground conductor film 502, a BCB film 504, a wiring conductor film 506 and the like are formed. By providing the insulating thin film 503 in this manner, conduction between the ground conductor film 502 and the pad portion 531 can be reliably avoided.

(Ninth Embodiment) Next, a ninth embodiment will be described. FIG. 14 is a sectional view showing the structure of a part of the semiconductor device according to the ninth embodiment.

As shown in FIG. 14, the structure of this embodiment is basically the same as that of the eighth embodiment. However, in the present embodiment, the substrate 501 is made of single crystal silicon, and the pad portion 531 is made of a LOCOS film 54 made of a silicon oxide film formed on a part of the substrate 501.
0. That is, in the case where the substrate is formed of a semiconductor such as silicon and a transistor is formed on any of the substrates 501, the LOC for element isolation is used.
Since the OS film 540 is formed, the LOCOS film 54
Forming the pad portion 531 on 0 has the advantage that the pad portion 531 can be reliably insulated from ground without increasing the number of steps.

In each of the above embodiments, the substrate 501 is made of glass or Si. However, the substrate in the present invention is not limited to this, and may be a ceramic substrate or another substrate. Also, the silicon thin film or the silicon nitride film has been described as the insulating thin film, but the insulating thin film in the present invention is not limited to this, and may be another type of insulating film.

Although the first and second insulating thin films described in the fourth embodiment have been described with the silicon oxide film and the silicon nitride film, respectively, the first is a silicon nitride film and the second is a silicon oxide film. It may be a membrane. In each embodiment, a laminated film of a silicon oxide film and a silicon nitride film, a silicon oxynitride film, or the like can be used for any of the insulating thin films. Further, an insulating film other than the silicon oxide film and the silicon nitride film, preferably, an inorganic insulating film can be used. When insulating thin films are formed above and below the BCB film, both may be the same film.

Further, the semiconductor chip described in each embodiment is not limited to this, and may be another device. Also,
In each embodiment, the wiring conductor film has been described as a single-layer wiring, but there is no problem even if a multilayer wiring is used in a pattern layout or a layout of a passive element. Furthermore, the material of the wiring conductor film and the ground conductor film is not limited to the materials described in the above embodiments, and various conductive materials can be arbitrarily selected and used.

In each of the above embodiments, the ground conductor film 502 is formed on the substrate 501. However, this film 502 does not necessarily have to be grounded, and the wiring conductor film 506 or 509 is grounded. Is also good.

[0119]

According to the semiconductor device of the present invention, since the dielectric film of the microstrip line is constituted by the BCB film and the insulating thin film formed in contact with the BCB film, the adhesion is good and the reliability is high. A low insertion loss MFIC that can perform flip chip bonding satisfactorily can be realized.

[0120] Further, the dielectric film of the microstrip trip line with constituting a BCB film, by a structure without the pad portion and a scribe line for wire bonding on the BCB film, adhesion good reliability MFIC with low insertion loss can be realized.

Further, according to the method of manufacturing a semiconductor device of the present invention,
According to this, since the insulating thin film is formed before or after the formation of the BCB film, the adhesion of the BCB film can be significantly enhanced, and the reliability of the semiconductor device can be greatly improved. Further, the yield of flip chip bonding can be greatly improved by the insulating thin film on the BCB film.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a process of manufacturing an MFIC according to a first embodiment.

FIG. 2 is a cross-sectional view illustrating a configuration of an MFIC according to a second embodiment.

FIG. 3 is a cross-sectional view illustrating a process of manufacturing an MFIC according to a second embodiment.

FIG. 4 is a diagram showing the adhesion of each film in an MFIC according to a second embodiment.

FIG. 5 is a cross-sectional view illustrating a configuration of an MFIC according to a third embodiment.

FIG. 6 is a cross-sectional view showing a process of manufacturing the MFIC according to the third embodiment.

FIG. 7 is a cross-sectional view illustrating a configuration of an MFIC according to a fourth embodiment.

FIG. 8 is a cross-sectional view showing a process of manufacturing an MFIC according to a fourth embodiment.

FIG. 9 is a cross-sectional view showing a step of manufacturing the MFIC according to the fifth embodiment.

FIG. 10 is a cross-sectional view showing a structure of a wiring board near a pad portion in an MFIC according to a sixth embodiment.

FIG. 11 is a cross-sectional view illustrating a structure of a wiring board near a pad portion in an MFIC according to a seventh embodiment.

FIG. 12 is a cross-sectional view taken along line II-II in FIG. 13 showing a structure of a wiring board near a pad portion in an MFIC according to an eighth embodiment, and a cross-sectional view showing a modification thereof.

FIG. 13 is a plan view illustrating a structure of a substrate in a wafer state during a process of manufacturing an MFIC according to an eighth embodiment.

FIG. 14 is a cross-sectional view showing a structure of a wiring board near a pad portion in an MFIC according to a ninth embodiment.

FIG. 15 is a cross-sectional view showing a configuration of a conventional MFIC.

[Explanation of symbols]

 Reference Signs List 501 substrate 502 ground conductor film 503 insulating thin film 504 BCB film 505 insulating thin film 506 wiring conductor film 507 contact hole 508 interlayer insulating film 509 wiring conductor film 510 thin film resistor 511 semiconductor chip 512 signal wiring 513 bump 520 metal burying layer 530 wire 531 pad Part 540 LOCOS film

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kaoru Inoue 1-1, Sachimachi, Takatsuki City, Osaka Prefecture Inside Matsushita Electronics Corporation (72) Inventor Takayuki Yoshida 1006 Kazuma Kazuma, Kadoma City, Osaka Matsushita Electric Industrial (56) References JP-A-4-152696 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 23/12 H05K 3/00 H01L 21/00

Claims (23)

(57) [Claims] 1. A semiconductor device comprising a wiring substrate having a substrate and a dielectric film formed thereon, wherein the dielectric film is a BCB film formed on a part of the substrate.
(Benzocyclobutene) and an insulating thin film formed on at least one of the upper and lower sides of the BCB film and in contact with the BCB film, wherein the insulating thin film is made of silicon nitride, silicon oxide, and oxynitride.
Composed of at least one of silicon nitride
Wherein a being. 2. A substrate and a BCB film (benzocyclobutene) formed on a part of the substrate.
Ten film ), and formed on and in contact with the BCB film.
And a wiring conductor film provided on the insulation thin film, wherein at least the wiring conductor film faces the BCB film.
BCB film, insulating thin film and wiring
Characterized in that the conductor films are laminated in close contact with each other
Semiconductor device. 3. A substrate, an underlying conductive film formed on the substrate, a BCB film formed on the underlying conductive film, a wiring conductor layer formed above the BCB film, the BCB Insulating thin film formed on the upper or lower surface of the film
A base film, a BCB film, an insulating thin film, and a wiring conductor film.
Note that a more microstrip line is configured.
Semiconductor device. 4. The semiconductor device according to claim 2 , wherein said insulating thin film is made of at least one of silicon nitride, silicon oxide, and silicon oxynitride. 5. The semiconductor device according to claim 1, wherein the thickness of the BCB film is larger than 10 μm. 6. The semiconductor device according to claim 3 , wherein: a semiconductor chip having a transistor; a signal wiring formed on a surface of the semiconductor chip and connected to the transistor; A semiconductor device further comprising a bump formed on at least one of the semiconductor chips, wherein the signal wiring and the wiring conductor film of the semiconductor chip are connected via the bump. 7. The semiconductor device according to claim 6, wherein the insulating thin film is formed at least between the BCB film and the wiring conductor film, and a thin film resistor formed on the insulating thin film is provided. A semiconductor device further provided. 8. The semiconductor device according to claim 6, wherein the insulating thin film is formed at least between the BCB film and a wiring conductor film, and a part of the wiring conductor film includes an external member. A semiconductor device, wherein a pad region connected via a wire is formed. 9. The semiconductor device according to claim 6, further comprising: a capacitor, wherein the insulating thin film is formed at least between the BCB film and the wiring conductor film, and is provided between the insulating thin film and the BCB film. Further comprising a lower electrode film of the capacitor interposed in a part of the wiring conductor film, the wiring conductor film functions as an upper electrode of the capacitor above the lower electrode film, and the insulating thin film is It functions as a capacitance part of the capacitor between the wiring conductor film and extends to a region other than above the lower electrode film and is interposed between the wiring conductor film and the BCB film. Semiconductor device. 10. The semiconductor device according to claim 9, further comprising a pad region formed on a part of said wiring conductor film and connected to an external member via a wire, wherein said pad region is provided for said capacitor. A semiconductor device which is at least 50 μm away from a portion serving as an upper electrode. 11. The semiconductor device according to claim 9, wherein a region of said wiring conductor film other than an upper electrode of said capacitor is connected to said lower electrode film via a contact hole formed in said insulating thin film. A semiconductor device, wherein a lead region is provided to connect to an external member via a wire at a part of the lead portion of the wiring conductor film. 12. A substrate, a base conductor film formed on the substrate, and a BC formed on at least a part of the base conductor film.
A B film, and a wiring conductor film formed on the BCB film and constituting a microstrip line together with the base conductor film and the BCB film. The wiring conductor film is formed of the BCB film on the substrate. A semiconductor device, which extends to an uncovered area, in which a pad area connected to an external member via a wire is formed. 13. The semiconductor device according to claim 12, wherein a majority of the underlying conductor film functions as a ground conductor film, and a portion of the underlying conductor film is separated from the majority portion. A semiconductor device, wherein a pad region of the wiring conductor film is formed in contact with the portion. 14. A substrate made of a semiconductor, element isolation formed on the substrate and made of an insulating material, a base conductor film formed on the substrate, and at least a part of the base conductor film. A BCB film formed on the region excluding the element isolation, and a wiring conductor film formed on the BCB film and constituting a microstrip line together with the base conductor film and the BCB film; A semiconductor device, wherein the wiring conductor film extends to a region on the element isolation, and a pad region connected to an external member via a wire is formed in the region. 15. The semiconductor device according to claim 1 , wherein the substrate is made of Si or glass. 16. The method of claim 6, 7, 8, 9, 10, or 11.
2. The semiconductor device according to claim 1, wherein the semiconductor chip is made of a compound semiconductor containing GaAs. 17. The method of claim 6, 7, 8, 9, 10, or 11.
The semiconductor device according to claim 1, wherein the semiconductor chip is formed of a semiconductor having a hetero junction. 18. The method of claim 6, 7, 8, 9, 10, or 11.
The semiconductor device according to claim 1, wherein the transistor is a high-frequency transistor used in a quasi-millimeter wave to a millimeter wave. 19. A wafer-shaped substrate, a base conductor film formed on the substrate, and a BC formed on at least a part of the base conductor film.
A B film, a wiring conductor film formed on the BCB film and constituting a microstrip line together with the base conductor film and the BCB film, and a scriber for dividing the substrate into a plurality of substrate chips. A semiconductor device, wherein the BCB film does not exist in a region, and the BCB film is divided for each of the substrate chips. 20. A first step of forming a base conductor film on a substrate, a second step of forming a BCB film on at least a part of the base conductor film, and a wiring conductor on the BCB film. A third step of forming a film, and a step of forming an insulating thin film in contact with the BCB film at least one of before and after the second step, and forming the insulating thin film Now, nitriding the insulating thin film
Less of silicon, silicon oxide and silicon oxynitride
A method for manufacturing a semiconductor device, comprising at least one of them . 21. The method of manufacturing a semiconductor device according to claim 20, wherein, in the third step, the wiring conductor film is formed as a multilayer metal wiring layer. 22. The method of manufacturing a semiconductor device according to claim 20 , wherein a step of preparing a semiconductor chip having a transistor and a signal wiring connected to the transistor is provided, and at least one of the wiring conductor film and the signal wiring is provided. Forming a bump at a desired position on one of the semiconductor chips; and connecting the signal wiring and the wiring conductor film of the semiconductor chip via the bump. Device manufacturing method. 23. The method of manufacturing a semiconductor device according to claim 20 , further comprising a dicing step of dividing the substrate into a plurality of substrate chips, wherein the second step includes the step of: A method for manufacturing a semiconductor device, comprising: forming the BCB film so that the BCB film does not exist in a scribe region.