JP3204356B2 - Transparent conductive film - Google Patents
Transparent conductive filmInfo
- Publication number
- JP3204356B2 JP3204356B2 JP31009894A JP31009894A JP3204356B2 JP 3204356 B2 JP3204356 B2 JP 3204356B2 JP 31009894 A JP31009894 A JP 31009894A JP 31009894 A JP31009894 A JP 31009894A JP 3204356 B2 JP3204356 B2 JP 3204356B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- resin
- transparent conductive
- cured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011347 resin Substances 0.000 claims description 36
- 229920005989 resin Polymers 0.000 claims description 36
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 15
- 239000011368 organic material Substances 0.000 claims description 12
- 239000004925 Acrylic resin Substances 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000002985 plastic film Substances 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 3
- 229920006255 plastic film Polymers 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 238000000016 photochemical curing Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 43
- 238000000576 coating method Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 10
- 229920003023 plastic Polymers 0.000 description 8
- 239000002966 varnish Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 2
- QDVNNDYBCWZVTI-UHFFFAOYSA-N bis[4-(ethylamino)phenyl]methanone Chemical compound C1=CC(NCC)=CC=C1C(=O)C1=CC=C(NCC)C=C1 QDVNNDYBCWZVTI-UHFFFAOYSA-N 0.000 description 2
- 125000004386 diacrylate group Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- JZMPIUODFXBXSC-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.CCOC(N)=O JZMPIUODFXBXSC-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical group I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000007763 reverse roll coating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Laminated Bodies (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Non-Insulated Conductors (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明はEL素子、LCD素子な
どのエレクトロニクス素子用フイルムに適用されるもの
である。特に液晶セル製造のための電極基板に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to films for electronic devices such as EL devices and LCD devices. In particular, it relates to an electrode substrate for manufacturing a liquid crystal cell.
【0002】[0002]
【従来の技術】情報化社会の発展に伴い、エレクトロル
ミネッサンスディスプレイ、液晶ディスプレイ等の開発
が行われ、それに関連して透明導電材料が進歩を遂げて
きた。そのなかでも液晶用の電極基盤は小型化のための
薄型化、軽量化が進んでおり、上記材料は従来ガラス板
が用いられていたが、重いこと、割れ易いことなどの問
題点があるため、この電極基板をプラスッチク製にする
ことが検討されている。この透明導電層からなる電極を
有するプラスチック基板においてガス及び水蒸気バリア
ー性を持たすためには、ポリビニルアルコール、エチレ
ン-ビニルアルコール共重合体が用いられてきたが、こ
れらの物質のガスバリアー性は湿度依存性が高く、十分
な性能を発揮させるためには使用条件の限定を余儀なく
される。そこで、これを克服する手段として、透明金属
酸化膜が使われる様になった。ここでの透明金属酸化膜
とは具体的には、酸化ケイ素、酸化インジウムが用いら
れる。しかしながら、上記の透明金属酸化膜は硬い膜で
はあるが、2000Å以下の非常に薄い膜であるため耐
スクラッチ性に劣り、必要となる加工工程上でこのガス
バリアー性の破損を招き、得られたフイルムは実用に耐
えないものになってしまうと言う現象である。2. Description of the Related Art With the development of the information-oriented society, electroluminescence displays and liquid crystal displays have been developed, and in connection with this, transparent conductive materials have made progress. Among them, the electrode base for liquid crystal is becoming thinner and lighter for miniaturization, and the above-mentioned materials are conventionally made of glass plates, but they have problems such as being heavy and being easily broken. It has been studied to make this electrode substrate made of plastic. Polyvinyl alcohol and ethylene-vinyl alcohol copolymers have been used to provide gas and water vapor barrier properties on plastic substrates having electrodes made of this transparent conductive layer, but the gas barrier properties of these substances depend on humidity. In order to exhibit high performance and sufficient performance, use conditions must be limited. Therefore, as a means to overcome this, a transparent metal oxide film has come to be used. Specifically, the transparent metal oxide film here includes silicon oxide and indium oxide. However, although the above-mentioned transparent metal oxide film is a hard film, it is inferior in scratch resistance because it is a very thin film of 2000 ° or less, and this gas barrier property is damaged in a necessary processing step, and thus the transparent metal oxide film is obtained. This is a phenomenon that the film becomes unusable.
【0003】[0003]
【発明が解決しようとする課題】この現象を回避する方
法として、金属酸化膜上に表面硬度のある保護膜を設け
るという方法があり、一般的には表面硬度、耐摩耗性を
有するためには三次元架橋ポリマーが最適であり、この
樹脂系としては光硬化性樹脂、熱硬化樹脂、電子線硬化
樹脂等が用いられ、この層の樹脂の選択として光硬化性
樹脂が適しており、架橋密度と速硬化性を得るために多
官能モノマーとプレポリマーとの組合せが用いられる。
そして硬度を重視するため付着性に劣っていた。本発明
は、このような背景下において、基板の材料の加工工程
でのバリアー層の破損により、基板のバリアー性の低下
を招かないように、ガスバリアー層としての金属酸化膜
上にある程度の硬度を備え付着性の良い硬質な有機硬化
膜を設けた透明導電フイルムを提供せんとするものであ
る。As a method of avoiding this phenomenon, there is a method of providing a protective film having a surface hardness on a metal oxide film. Generally, in order to have a surface hardness and abrasion resistance, it is necessary to provide a protective film having a surface hardness. A three-dimensional crosslinked polymer is most suitable, and as the resin system, a photocurable resin, a thermosetting resin, an electron beam curable resin, or the like is used. In order to obtain fast curability, a combination of a polyfunctional monomer and a prepolymer is used.
In addition, the adhesion was inferior because importance was placed on hardness. Under such a background, a certain degree of hardness is provided on a metal oxide film as a gas barrier layer so as not to cause a decrease in the barrier properties of the substrate due to the breakage of the barrier layer in the process of processing the material of the substrate. And a transparent conductive film provided with a hard organic cured film having good adhesion.
【0004】[0004]
【課題を解決するための手段】即ち本発明は透明性を有
するプラスチックフイルム(1)の少なくとも片面上に硬
化樹脂層(2)を設け、この樹脂層上に積層されたガスバ
リアー性透明金属酸化物層(3)及び、当該金属酸化物層
(3)上に硬質な有機物質層(4)を有し、そのどちらか一
方に硬化樹脂層(2)を介して透明導電層(5)を有する透
明導電プラスッチックフイルムであって、前記の硬質な
有機物質層がアクリルモノマーとエポキシアクリレート
樹脂との光硬化反応物であって、そのエポキシアクリレ
ート樹脂が下記式That is, the present invention provides a cured plastic layer (2) on at least one side of a transparent plastic film (1), and a gas barrier transparent metal oxide laminated on the resin layer. Layer (3) and the metal oxide layer
(3) A transparent conductive plastic film having a hard organic material layer (4) on one side and a transparent conductive layer (5) on one of the layers via a cured resin layer (2), Is a photo-cured reaction product of an acrylic monomer and an epoxy acrylate resin, and the epoxy acrylate resin has the following formula
【化2】 [但し、式中のnは1〜6の整数を表す。]で表せられる
ビスフェノールA型エポキシアクリレート樹脂であり、
反応の際の樹脂全体に対する重量比率が50%以上であ
る硬化被膜を備えた透明導電フイルムであり、かつ上記
各層は図1〜図3に示す様に(1)/(2)/(3)/(4)/(2)
/(5)、(2)/(1)/(2)/(3)/(4)/(2)/(5) 又は(5)
/(2)/(1)/(2)/(3)/(4)の配列で積層されてなるこ
とを特徴とする透明導電フイルムである。Embedded image [However, n in the formula represents an integer of 1 to 6. ] Is a bisphenol A type epoxy acrylate resin represented by
It is a transparent conductive film provided with a cured film having a weight ratio of 50% or more to the whole resin at the time of the reaction, and each of the above-mentioned layers is (1) / (2) / (3) as shown in FIGS. / (4) / (2)
/ (5), (2) / (1) / (2) / (3) / (4) / (2) / (5) or (5)
A transparent conductive film characterized by being laminated in an arrangement of / (2) / (1) / (2) / (3) / (4).
【0005】本発明における透明なプラスッチクフイル
ム(1)としては、本発明の透明導電フイルムの基材とな
るものであり、ポリエステルフイルム、ポリカーボネー
トフイルム、ポリアリレートフイルム、ポリエーテルサ
ルホンフイルム等を挙げることが出来るが、機械的強
度、光学的特性、耐熱性等の点からポリエーテルサルホ
ンフイルムが特に好ましい。フイルムの厚みは50〜300
μmであり、好ましくは75〜125μmである。[0005] The transparent plastic film (1) in the present invention is a base material of the transparent conductive film of the present invention, and includes polyester film, polycarbonate film, polyarylate film, polyether sulfone film and the like. However, a polyether sulfone film is particularly preferable in terms of mechanical strength, optical properties, heat resistance and the like. Film thickness is 50 ~ 300
μm, and preferably 75 to 125 μm.
【0006】硬化樹脂層(2)は樹脂ワニスを塗布し乾燥
により溶剤を除去することで得られる。この際樹脂系と
しては溶剤除去後成膜性を有する樹脂系即ち固形の樹脂
を添加したワニスが均一塗布という観点から好ましく、
具体的には光硬化性樹脂としてエポキシジアクリレー
ト、ウレタンジアクリレート、ポリエステルジアクリレ
ート等のいわゆるアクリルプレポリマーや、熱硬化性樹
脂として、O−クレゾールノボラック型、ビスフェノー
ル型のエポキシ系や、ウレタン系、アクリル系、尿素
系、メラミン系、及び不飽和ポリエステル系や、電子線
硬化性樹脂などが挙げられる。生産性、コストの点から
光硬化性樹脂が一般的に見て好ましい。基板に当該硬化
樹脂被膜を形成させる方法としてはグラビアコート法、
リバースロールコート法、キスロールコート法などがあ
るが、いずれの方法を用いても工業的な製造を考慮する
と5分以内で硬化できるものが望ましい。なお、硬化被
膜は実質的に透明で光学当方性でなければならない。The cured resin layer (2) is obtained by applying a resin varnish and removing the solvent by drying. In this case, as the resin system, a varnish to which a resin system having film forming properties after removing the solvent, that is, a varnish to which a solid resin is added is preferable from the viewpoint of uniform application,
Specifically, epoxy diacrylate, urethane diacrylate, so-called acrylic prepolymers such as polyester diacrylate and the like as a photocurable resin, and as a thermosetting resin, O-cresol novolak type, bisphenol type epoxy type, urethane type, Acrylic-based, urea-based, melamine-based, unsaturated polyester-based, electron beam-curable resins, and the like. From the viewpoint of productivity and cost, a photocurable resin is generally preferred. As a method of forming the cured resin film on the substrate, a gravure coating method,
There are a reverse roll coating method, a kiss roll coating method, and the like. However, in consideration of industrial production, it is preferable that any of these methods can be cured within 5 minutes. The cured coating must be substantially transparent and optically isotropic.
【0007】透明金属酸化物層(3)だが、酸化珪素及
び、酸化インジウム等があり、これらの膜厚は100〜
2000Åにすることが望ましく、その厚さが余りにも
厚いときには透明性、柔軟性に欠き、薄いときにはその
性能効果が弱くなる。これらの膜厚は上記の兼ね合いで
適宜選択してやる。これらの薄膜はスパッタリング法、
イオンプレーティング法、CVD法等公知の手段により
形成される。The transparent metal oxide layer (3) includes silicon oxide, indium oxide, etc.
When the thickness is too large, transparency and flexibility are poor when the thickness is too large, and the performance effect is weak when the thickness is too thin. These film thicknesses are appropriately selected in consideration of the above. These thin films are formed by sputtering,
It is formed by a known means such as an ion plating method and a CVD method.
【0008】次いで上記の金属酸化物層上に積層する硬
質な有機物質層(4)は表面硬度より十分な付着性を得る
ことを重視して、鋭意検討した結果、プレポリマーとし
てのビスフェノールA型エポキシアクリレート成分を5
0%以上含む塗膜で良好な結果を見いだした。特に好ま
しくは、80%以上含む塗膜にすることが肝要である。
当該有機物質層を形成する方法は前記の硬化樹脂層(2)
の場合と同様の方法による性膜が好ましい。なお、この
硬化被膜も実質的に透明で光学等方性でなければならな
い。Next, the hard organic material layer (4) laminated on the above-mentioned metal oxide layer has been studied diligently with an emphasis on obtaining sufficient adhesion over the surface hardness. 5 epoxy acrylate components
Good results were found with coatings containing 0% or more. It is particularly important that the coating film contains 80% or more.
The method for forming the organic material layer is the same as the method for forming the cured resin layer (2)
Preferred is a film formed by the same method as described above. The cured coating must also be substantially transparent and optically isotropic.
【0009】最後に透明導電層(5)がかかる塗膜上に形
成される。透明導電層は金属酸化物の薄膜であり、酸化
インジウム、酸化錫、酸化カドミウム等であり、これら
のうち特に5〜10重量%の酸化錫を含有した酸化イン
ジウムの薄膜を形成することが好ましい。これらの膜厚
は50〜2000Å の範囲で適宜選択することが可能
である。これらの薄膜はスパッタリング法、イオンプレ
ーティング法等公知の手段により形成される。かくして
適度な硬度を持ち付着性の良い有機物質層を備えた透明
導電フイルムが得られた。Finally, a transparent conductive layer (5) is formed on the coating. The transparent conductive layer is a thin film of a metal oxide, such as indium oxide, tin oxide, and cadmium oxide. Of these, it is particularly preferable to form a thin film of indium oxide containing 5 to 10% by weight of tin oxide. These film thicknesses can be appropriately selected within the range of 50 to 2000 °. These thin films are formed by a known method such as a sputtering method and an ion plating method. Thus, a transparent conductive film having an appropriate hardness and an organic substance layer having good adhesion was obtained.
【0010】[0010]
《実施例1》図3は本発明の透明導電フイルムの模式図
であり、透明導電層(5)を設けた状態を示してある。透
明なプラスッチクフィルム(1)はポリエーテルサルホン
を準備した。このフイルムは溶融押出法により成膜され
たものである。厚さは100μm、レタデーション値は
10nm以下、可視光線透過率は90%である。この透
明なプラスッチクフイルム(1)の両面にアクリレート系
コーティング剤をロールコーター法により均一に塗布
し、80℃で加熱して溶剤を除去した後80W/cmの
高圧水銀灯1灯にて照射距離15cmで10秒間照射し
て、5.0μmの硬化樹脂層(2)を成膜させた。この一
方の塗膜の上に厚さ300ÅのSiO2 の層からなる金
属酸化物層(3)をスパッタリング法により成膜させた。
硬化樹脂層(2)との密着性は良好であった。この金属酸
化物層(3)の上に ・光硬化性樹脂配合割合 ビスフェノールA型エポキシアクリレートの65%溶液 (昭和高分子株式会社製) 40重量部 4,4′−ジエチルアミノベンゾフェノン (日本チバガイギー株式会社製) 0.9重量部 溶媒 酢酸ブチル/ブチルセロソルブ 重量比4/1 残量 よりなる組成の樹脂ワニス15g/m2 をグラビアコータ
ーで塗布し、120℃で2分間加熱して溶剤を除去した
後80W/cmの高圧水銀灯2灯にて、照射距離15c
mで10秒間照射して、膜厚4.0μmの有機物質層
(4)を形成した。得られた有機物質層(4)の塗膜物性を
表1に記す。最後に、もう一方の硬化樹脂層(2)上にス
パッタ法により酸化インジウム、酸化錫の透明導電層を
厚み300Åにて形成させて透明導電フイルムを得た。<< Embodiment 1 >> FIG. 3 is a schematic view of a transparent conductive film of the present invention, showing a state where a transparent conductive layer (5) is provided. As a transparent plastic film (1), polyether sulfone was prepared. This film is formed by a melt extrusion method. The thickness is 100 μm, the retardation value is 10 nm or less, and the visible light transmittance is 90%. An acrylate-based coating agent was uniformly applied to both surfaces of the transparent plastic film (1) by a roll coater method, heated at 80 ° C. to remove the solvent, and then irradiated with one 80 W / cm high-pressure mercury lamp at an irradiation distance of 15 cm. Irradiation was performed for 10 seconds to form a cured resin layer (2) having a thickness of 5.0 μm. A metal oxide layer (3) consisting of a layer of SiO 2 having a thickness of 300 ° was formed on one of the coating films by a sputtering method.
The adhesion to the cured resin layer (2) was good. On top of this metal oxide layer (3): Photocurable resin blending ratio Bisphenol A type epoxy acrylate 65% solution (manufactured by Showa Polymer Co., Ltd.) 40 parts by weight 4,4'-diethylaminobenzophenone (Nippon Ciba Geigy Co., Ltd.) 0.9 parts by weight Solvent Butyl acetate / Butyl cellosolve Solvent varnish having a composition consisting of 4/1 by weight and a residual amount of 15 g / m 2 was applied with a gravure coater, and heated at 120 ° C. for 2 minutes to remove the solvent, and then 80 W / Cm 2 high pressure mercury lamp, irradiation distance 15c
m for 10 seconds to form an organic material layer with a thickness of 4.0 μm
(4) was formed. Table 1 shows the physical properties of the obtained organic substance layer (4). Finally, a transparent conductive layer of indium oxide and tin oxide was formed on the other cured resin layer (2) by a sputtering method to a thickness of 300 ° to obtain a transparent conductive film.
【0011】《実施例2》実施例1に於て、得られた有
機物質層(4)組成中にビスフェノールA型エポキシアク
リレート樹脂が約60%となる下記の処方とした以外は
全く同様の操作を行った。 ・光硬化性樹脂配合割合 ビスフェノールA型エポキシアクリレートの65%溶液 (昭和高分子株式会社製) 23重量部 トリメチロールプロパントリアクリレートの80%溶液 (大日本インキ株式会社製) 12.5重量部 4,4′−ジエチルアミノベンゾフェノン (日本チバガイギー株式会社製) 0.9重量部 溶媒 酢酸ブチル/ブチルセロソルブ 重量比4/1 残量 上記の樹脂ワニスにより、膜厚3.9μmの有機物質層
を形成した。上記で得られたこの塗膜物性を表1に記
す。Example 2 The same procedure as in Example 1 was carried out except that the composition of the organic material layer (4) obtained was such that the bisphenol A type epoxy acrylate resin was about 60% in the composition below. Was done. -Photocurable resin compounding ratio 65% solution of bisphenol A type epoxy acrylate (manufactured by Showa Polymer Co., Ltd.) 23 parts by weight 80% solution of trimethylolpropane triacrylate (manufactured by Dainippon Ink Co., Ltd.) 12.5 parts by weight 4 , 4'-Diethylaminobenzophenone (Nippon Ciba Geigy Co., Ltd.) 0.9 parts by weight Solvent butyl acetate / butyl cellosolve weight ratio 4/1 remaining amount An organic material layer having a thickness of 3.9 μm was formed by the above resin varnish. The properties of the coating film obtained above are shown in Table 1.
【0012】《比較例1》実施例1に於て、得られた有
機物質層(4)組成中にビスフェノールA型エポキシアク
リレート樹脂が約40%となる下記の処方とした以外は
全く同様の操作を行った。 ・光硬化性樹脂配合割合 ビスフェノールA型エポキシアクリレートの65%溶液 (昭和高分子株式会社製) 15重量部 トリメチロールプロパントリアクリレートの85%溶液 (大日本インキ株式会社製) 18重量部 4,4′−ジエチルアミノベンゾフェノン (日本チバガイギー株式会社製) 0.9重量部 溶媒 酢酸ブチル/ブチルセロソルブ 重量比4/1 残量 上記の樹脂ワニスにより、膜厚3.6μmの有機物質層
を形成した。上記で得られたこの塗膜物性を表1に記
す。<Comparative Example 1> The same operation as in Example 1 was carried out except that the composition of the organic substance layer (4) obtained was such that the bisphenol A type epoxy acrylate resin contained about 40% of the following composition. Was done. -Photocurable resin compounding ratio 65% solution of bisphenol A type epoxy acrylate (manufactured by Showa Polymer Co., Ltd.) 15 parts by weight 85% solution of trimethylolpropane triacrylate (manufactured by Dainippon Ink Co., Ltd.) 18 parts by weight 4.4 '-Diethylaminobenzophenone (manufactured by Nippon Ciba Geigy Co., Ltd.) 0.9 part by weight Solvent butyl acetate / butyl cellosolve weight ratio 4/1 remaining amount An organic material layer having a thickness of 3.6 μm was formed by the above resin varnish. The properties of the coating film obtained above are shown in Table 1.
【0013】《比較例2》実施例1に於て、ビスフェノ
ールA型エポキシアクリレートを硬化後物性が剛性の高
いノボラック型エポキシアクリレートに変更した、下記
の処方とした以外は全く同様の操作を行った。 ・光硬化性樹脂配合割合 ノボラック型エポキシアクリレート樹脂 (日本化薬株式会社製) 25重量部 1−ヒドロキシ−シクロヘキシルフェニルケトン (日本チバガイギー株式会社製) 0.9重量部 溶媒 メチルセロソルブアセテート 残量 上記の樹脂ワニスにより、膜厚4.0μmの有機物質層
を形成した。上記で得られたこの塗膜物性を表1に記
す。Comparative Example 2 The same operation as in Example 1 was carried out except that the bisphenol A type epoxy acrylate was changed to a novolak type epoxy acrylate having high rigidity after curing. . -Photocurable resin compounding ratio Novolak type epoxy acrylate resin (Nippon Kayaku Co., Ltd.) 25 parts by weight 1-hydroxy-cyclohexylphenyl ketone (Nippon Ciba Geigy Co., Ltd.) 0.9 parts by weight Solvent Methyl cellosolve acetate An organic material layer having a thickness of 4.0 μm was formed using a resin varnish. The properties of the coating film obtained above are shown in Table 1.
【0014】《比較例3》実施例1に於て、得られる有
機物質層(4)を熱硬化性樹脂であるビスフェノールA型
エポキシ樹脂を用いた下記の処方とした以外は全く同様
の操作を行った。 ・熱硬化性樹脂配合割合 ビスフェノールA型エポキシ樹脂 (東都化成株式会社製) 15重量部 2,4,6トリ[ジメチルアミノメチル]フェノール (化薬アクゾ株式会社製) 0.4重量部 ペンタエリスリトールテトラキス[β-チオプロピオネート] (淀化学株式会社) 9重量部 ペンタエリスルチル−テトラキス[3-(3,5-t-ブチル-4- ヒドロキシフェニル)プロピオネート] (日本チバガイギー株式会社製) 0.9重量部 溶媒 メチルセロソルブアセテート/ブチルセロソルブ 重量比4/1 残量 よりなる組成の樹脂ワニス20g/m2をキスコーターで
塗布し、150℃で5分間加熱硬化させて、膜厚4.5
μmの有機物質層(4)を形成した。上記で得られた有機
物質層(4)の塗膜物性を表1に記す。Comparative Example 3 The same operation as in Example 1 was carried out except that the obtained organic substance layer (4) had the following formulation using bisphenol A type epoxy resin as a thermosetting resin. went. -Thermosetting resin compounding ratio Bisphenol A type epoxy resin (manufactured by Toto Kasei Co., Ltd.) 15 parts by weight 2,4,6 tri [dimethylaminomethyl] phenol (manufactured by Kayaku Akzo Co., Ltd.) 0.4 parts by weight Pentaerythritol tetrakis [Β-thiopropionate] (Yodo Chemical Co., Ltd.) 9 parts by weight pentaerythryl-tetrakis [3- (3,5-t-butyl-4-hydroxyphenyl) propionate] (Nippon Ciba Geigy Co., Ltd.) 9 parts by weight Solvent Methyl cellosolve acetate / butyl cellosolve 20 g / m 2 of resin varnish having a weight ratio of 4/1 was applied by a kiss coater and cured by heating at 150 ° C. for 5 minutes to obtain a film thickness of 4.5.
A μm organic material layer (4) was formed. Table 1 shows the physical properties of the coating of the organic substance layer (4) obtained above.
【0015】 表 1 塗 膜 物 性 碁盤目テ―プ試験 鉛筆硬度 膜厚[μm] 実施例1 100/100 2H 4.0 実施例2 89/100 2H 3.9 比較例1 0/100 2H 3.6 比較例2 0/100 3H 4.0 比較例3 0/100 H 4.5 ※塗膜物性評価方法の碁盤目テープ試験、鉛筆硬度 についてはJIS-K-5400に準じた。Table 1 Paint film Physical properties Cross cut tape test Pencil hardness Film thickness [μm] Example 1 100/100 2H 4.0 Example 2 89/100 2H 3.9 Comparative Example 10 0/100 2H 3.6 Comparative Example 2 0/100 3H 4.0 Comparative Example 3 0/100 H 4.5 * The cross-cut tape test and pencil hardness of the coating film property evaluation method were in accordance with JIS-K-5400.
【0016】[0016]
【発明の効果】本発明の透明導電フイルムを使用するこ
とにより、液晶表示加工工程中での取扱いで金属酸化物
層(3)に割れなどのトラブルによりガスバリアー性を損
なわない、良好な液晶表示素子を得ることができた。EFFECT OF THE INVENTION By using the transparent conductive film of the present invention, a good liquid crystal display which does not impair the gas barrier properties due to troubles such as cracks in the metal oxide layer (3) during handling in the liquid crystal display processing step. The device was obtained.
【図1】本発明の透明導電フイルムの断面図であり、透
明導電層(5)を積層した状態を示してある。FIG. 1 is a cross-sectional view of a transparent conductive film of the present invention, showing a state where a transparent conductive layer (5) is laminated.
【図2】本発明の透明導電フイルムの断面図であり、透
明導電層(5)を積層した状態を示してある。FIG. 2 is a cross-sectional view of the transparent conductive film of the present invention, showing a state where a transparent conductive layer (5) is laminated.
【図3】本発明の透明導電フイルムの断面図であり、透
明導電層(5)を積層した状態を示してある。FIG. 3 is a cross-sectional view of the transparent conductive film of the present invention, showing a state where a transparent conductive layer (5) is laminated.
1 透明プラスッチックフイルム 2 硬化樹脂層 3 金属酸化物層 4 有機物質層 5 透明導電層 DESCRIPTION OF SYMBOLS 1 Transparent plastic film 2 Cured resin layer 3 Metal oxide layer 4 Organic material layer 5 Transparent conductive layer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H05K 1/03 630 H05K 1/03 630C ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI H05K 1/03 630 H05K 1/03 630C
Claims (1)
(1)の少なくとも片面上に硬化樹脂層(2)を設け、この樹
脂層上に積層されたガスバリアー性透明金属酸化物層
(3)及び、当該金属酸化物層(3)上に硬質な有機物質層
(4)を有し、そのどちらか一方に硬化樹脂層(2)を介して
透明導電層(5)を有する透明導電プラスッチックフイル
ムであって、前記の硬質な有機物質層がアクリルモノマ
ーとエポキシアクリレート樹脂との光硬化反応物であっ
て、そのエポキシアクリレート樹脂が下記式 【化1】 [但し、式中のnは1〜6の整数を表す。]で表せられる
ビスフェノールA型エポキシアクリレート樹脂であり、
反応の際の樹脂全体に対する重量比率が50%以上であ
る硬化被膜を備えた透明導電フイルム。1. A plastic film having transparency
A cured resin layer (2) is provided on at least one surface of (1), and a gas barrier transparent metal oxide layer laminated on the resin layer
(3) and a hard organic material layer on the metal oxide layer (3)
(4) is a transparent conductive plastic film having a transparent conductive layer (5) via a cured resin layer (2) on one of the two, wherein the hard organic material layer is an acrylic monomer and A photocuring reaction product with an epoxy acrylate resin, wherein the epoxy acrylate resin has the following formula: [However, n in the formula represents an integer of 1 to 6. ] Is a bisphenol A type epoxy acrylate resin represented by
A transparent conductive film provided with a cured film having a weight ratio of 50% or more to the whole resin at the time of reaction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31009894A JP3204356B2 (en) | 1994-12-14 | 1994-12-14 | Transparent conductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31009894A JP3204356B2 (en) | 1994-12-14 | 1994-12-14 | Transparent conductive film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08165368A JPH08165368A (en) | 1996-06-25 |
JP3204356B2 true JP3204356B2 (en) | 2001-09-04 |
Family
ID=18001167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31009894A Expired - Fee Related JP3204356B2 (en) | 1994-12-14 | 1994-12-14 | Transparent conductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3204356B2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3313306B2 (en) * | 1997-05-30 | 2002-08-12 | 住友ベークライト株式会社 | Antistatic film |
US6492026B1 (en) * | 2000-04-20 | 2002-12-10 | Battelle Memorial Institute | Smoothing and barrier layers on high Tg substrates |
US8187718B2 (en) | 2008-04-14 | 2012-05-29 | Fujifilm Corporation | Barrier laminate, barrier film substrate and device |
JP5320167B2 (en) | 2008-05-30 | 2013-10-23 | 富士フイルム株式会社 | Barrier laminate, gas barrier film, device and laminate production method |
JP5281964B2 (en) * | 2008-06-26 | 2013-09-04 | 富士フイルム株式会社 | Barrier laminate, gas barrier film, device and laminate production method |
JP5580561B2 (en) | 2009-09-01 | 2014-08-27 | 富士フイルム株式会社 | Barrier laminate, gas barrier film, and method for producing barrier laminate |
JP6040059B2 (en) * | 2013-03-07 | 2016-12-07 | 富士フイルム株式会社 | Barrier laminate and gas barrier film |
-
1994
- 1994-12-14 JP JP31009894A patent/JP3204356B2/en not_active Expired - Fee Related
Also Published As
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JPH08165368A (en) | 1996-06-25 |
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