JP3202954B2 - Processing liquid supply device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing liquid supply apparatus for supplying a processing liquid to a substrate.

[0002]

2. Description of the Related Art In a manufacturing process of a semiconductor device, for example, a processing liquid is vaporized in a carrier gas, for example, by bubbling, and together with the carrier gas, a semiconductor wafer as a substrate (hereinafter referred to as a "wafer"). ) Is used. For example, hexamethyldisilazane (hereinafter, referred to as "hexamethyldisilazane") used for surface treatment of a wafer for the purpose of improving the fixability of a resist.
Called "HMDS". ) Is also supplied to the surface of the wafer after being vaporized by the processing liquid supply device.

[0003] This will be described with reference to FIG.
In a conventional processing liquid supply apparatus 100 for supplying S in the form of gas or mist, HMDS1 as a processing liquid is used.
01 is stored in the tank 102.
A nitrogen gas (N ₂ gas) is supplied as a carrier gas to the bubbler 103 provided at the bottom of the inside, and the HMDS 101 is vaporized and mixed into the nitrogen gas bubbles 104 from the bubbler 103. And HMDS101 is HM with nitrogen gas.
The wafer is sent to the processing vessel 105 via the DS gas supply pipe 110 and supplied to the wafer W in the processing vessel 105. Thereby, the surface of the wafer W is subjected to a hydrophobic treatment by HMDS, and the processed gas after the treatment is exhausted from the exhaust pipe 111.

Incidentally, it is necessary to uniformly supply the processing liquid to the surface of the wafer W. Therefore, it is necessary to maintain the amount of the HMDS 101 mixed in the nitrogen gas at a predetermined amount and to keep the concentration constant. Therefore, in the processing liquid supply device 100, when the carrier gas is blown into the processing liquid for bubbling, the blowing amount is controlled to achieve a predetermined concentration.

[0005]

However, even if the amount of nitrogen gas blown is controlled, if the nitrogen gas bubbles 104 burst on the upper surface of the HMDS 101 stored in the tank 102, mist of HMDS having a large particle size is generated. appear.
Therefore, the concentration of HMDS supplied to the wafer W is not stable, and if the mist is supplied to the wafer W in the processing container 105 as it is, the surface of the wafer W may be uneven. In addition, since this type of processing liquid supply apparatus 100 is used in combination with other processing apparatuses usually required for photolithography processing, for example, a resist coating apparatus, a development processing apparatus, a heating apparatus, and the like, the installation space is smaller. Good. However, the conventional processing liquid supply device 1
Since there is a tank 102 in 00, the processing liquid supply device 10
There is a limit to the reduction of 0 itself. Further, the tank 102
Since a large amount of HMDS 101 is normally stored in the HMDS 101, when the HMDS 101 is to be replaced due to deterioration or the like, for example, a new HMDS corresponding to the entire amount thereof is provided.
101 is required, which is uneconomical.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a new processing liquid supply apparatus capable of easily controlling a stable concentration of a processing liquid supplied to a substrate in a processing chamber and easily reducing the size. Then, it aims at solving the said problem.

[0007]

According to a first aspect of the present invention, there is provided an apparatus for supplying a processing liquid to a substrate in a processing chamber, the processing liquid supplying apparatus comprising: a tube communicating with the processing chamber; And a processing gas supply means for supplying a processing liquid into the hollow member, wherein the hollow member comprises: It is characterized by being made of a material capable of causing the treatment liquid in the flow path to seep out of the hollow member.

According to this configuration, the processing liquid oozes out through the hollow member. Therefore, the vapor or mist of the evaporated processing liquid is supplied to the substrate in the processing chamber by the carrier gas, so that the concentration of the processing liquid in the carrier gas is made uniform without the bubbles popping out unlike the conventional case. Therefore, fluctuations in the concentration of the processing liquid supplied to the substrate are small and stable. Further, by adjusting the amount of the processing liquid when oozing out, the concentration of the processing liquid can be easily controlled. As a result, it is possible to suppress the occurrence of unevenness on the substrate surface. Further, since the tube can be arranged in a narrow space, the processing liquid supply device itself can be easily reduced in size.

According to a second aspect of the present invention, in the processing liquid supply apparatus according to the first aspect, the hollow member includes:
Only the inlet portion for flowing the processing liquid into the flow path in the hollow member may be formed. According to this configuration, the processing liquid supplied into the hollow member sequentially oozes out, so that a new processing liquid is always supplied.

According to a third aspect of the present invention, in the processing liquid supply apparatus according to the first aspect, the hollow member has an inlet portion through which a processing liquid flows into a flow path in the hollow member. , An outlet part for flowing out of the flow path to the outside may be formed, and a circulation path connecting the outlet part and the inlet part may be further provided. According to this configuration, since the processing liquid circulates through the circulation path, deterioration of the processing liquid is suppressed, and fresh vapor of the processing liquid can be supplied to the substrate in the processing chamber.

According to a fourth aspect of the present invention, the processing liquid supply device according to the first, second, or third aspect is provided with a temperature adjusting device for adjusting the temperature of the processing liquid. According to such a configuration, the processing liquid can be adjusted to an appropriate temperature and supplied to the substrate in the processing chamber.

The invention according to claim 5 is the invention according to claims 1, 2,
5. The processing liquid supply device according to 3 or 4, further comprising a recovery unit that recovers the processing liquid dropped from the hollow member, and a return unit that returns the processing liquid in the recovery unit to the processing liquid supply system. And According to such a configuration, the processing liquid dropped from the hollow member can be collected and reused. Further, as the recovery means, for example, a drain pan can be mentioned, and as the return means, for example, a combination of a pump and a pipe such as a return pipe can be proposed.

The invention according to claim 6 is the invention according to claims 1, 2,
6. The processing liquid supply device according to 3, 4, or 5, further comprising: a concentration sensor disposed downstream of the hollow member in the tube for detecting a concentration of the processing liquid; and a concentration sensor configured to detect a concentration of the processing liquid detected by the concentration sensor. And control means for controlling the supply pressure of the processing liquid supply means. According to such a configuration, the supply pressure of the processing liquid supply means can be controlled to control the amount of the processing liquid that seeps out of the hollow member, and it is possible to always maintain an appropriate concentration. Therefore, control of the concentration of the processing liquid becomes easy.

The hollow member used in the processing liquid supply device according to the first, second, third, fourth, fifth or sixth aspect is preferably a porous membrane tube as described in the seventh aspect.

[0015]

Embodiments of the present invention will be described below with reference to the accompanying drawings. The processing liquid supply device according to this embodiment is embodied as a device that supplies an HMDS liquid to an adhesion device incorporated in a coating and developing processing system that performs a series of photolithography processes on a wafer W. 1 to 3 show an overview of this coating and developing system, and FIG.
FIG. 2 shows a front view, and FIG. 3 shows a rear view.

The coating and developing system 1 includes a wafer W
A cassette station 2 for loading or unloading a plurality of wafers in units of cassettes C, for example, in units of 25, from the outside to the system, or unloading the wafers W from or to the cassette C; A processing station 3 in which various processing apparatuses as single-wafer processing units for performing predetermined processing on wafers W one by one in a development processing step are arranged at predetermined positions in multiple stages, and adjacent to the processing station 3. It has a configuration in which an interface unit 4 for transferring a wafer W to and from an provided exposure apparatus (not shown) is integrally connected.

In the cassette station 2, as shown in FIG. 1, for example, up to four cassettes C are placed at the positions of the positioning projections 5a on the cassette mounting table 5 serving as a mounting portion.
The wafers are placed in a line in the X direction (vertical direction in FIG. 1) with their respective wafer entrances facing the processing station 3 side. The sub-transfer device 10 that is movable in the arrangement direction of the cassette C (X direction) and the arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction) is movable along the transfer path 10a. And each of the cassettes C can be selectively accessed. The sub-transport device 10 is configured to be rotatable in the θ direction, and can also access a _third processing device group G3 on the processing station 3 side as described later.

The processing station 3 is provided at its center with a vertical transfer type main transfer device 20. The main transfer device 20 is configured to be vertically movable and rotatable in the θ direction, and is provided with a holding member for holding the wafer W, for example, three tweezers. Accordingly, the main transfer device 20 uses the three tweezers to set the wafer W
Holds the, G ₁ ~G ₅ which various kinds of processing units as a processing unit around the main carrier unit 20 is a multi-stage integrated arrangement
It is configured to be able to carry in and out of each processing device group.

In this coating and developing processing system 1, five processing unit groups G ₁ , G ₂ , G ₃ , G ₄ , G ₅ can be arranged, and the first and second processing unit groups G ₁ , G ₂ is disposed on the front side of the system, the third processing unit group G ₃ is disposed adjacent to the cassette station 2, the fourth processing unit group G ₄ is disposed adjacent to the interface section 4,
Further, it is possible to arrange a _fifth processing unit group G5 indicated by a broken line on the back side.

[0020] In the first processing unit group G ₁ as shown in FIG. 2, two spinner-type processing apparatus for performing predetermined processing mounted on a spin chuck the wafer W in a cup CP, for example, resist coating device ( COT) and development processing equipment (D
EV) are stacked in two stages in order from the bottom. And the first
Like the processing unit group G _1, the second processing spinner type processing apparatus two even in unit group G _2, for example resist coating unit (COT) and developing unit (DEV) 2 tiers from the bottom in the order of Are stacked.

As shown in FIG. 3, in a _third processing unit group G3, an oven-type processing unit for performing a predetermined process by placing the wafer W on a mounting table (not shown), for example, a cooling process for performing a cooling process Apparatus (COL), a pre-baking apparatus (PREBAKE) and a post-baking apparatus (POBAKE) for performing a heat treatment before the exposure processing, and an adhesion processing apparatus (AD) 30 for performing a so-called hydrophobic treatment for improving the fixability of the resist. Are superimposed, for example, in eight stages.

The various processing units as these processing units can be rearranged for each processing unit so that a desired wafer processing can be performed. For example, prebaking equipment (PREBAKE) with high processing temperature,
A post-baking device (POBAKE) and an adhesion device (AD) 30 are arranged in the upper stage, and a cooling processing device (COL) and an alignment device (AL) having a low processing temperature are arranged.
By arranging IM) and the like in the lower stage, thermal mutual interference between the processing units can be reduced.

As shown in FIG. 1, the interface unit 4 is provided with a peripheral exposure device 31 on the back surface and a wafer carrier 32 at the center. The wafer carrier 32, X-direction, while moving in the Z direction (vertical direction), rotated in the θ direction, extensions belonging and peripheral exposure device 31, the fourth processing unit group G ₄ of the processing station 3 side An apparatus (EXT) and a wafer transfer table (not shown) on the side of an exposure apparatus (not shown) for exposing an adjacent pattern can also be accessed.

[0024] In the coating and developing processing system 1 is configured as described above, the adhesion unit 30 provided in the third processing unit group G _3, as shown in FIG. 4, heating the wafer W in the processing chamber 35 A mounting table 36 having a built-in heating mechanism (not shown) for performing the processing is arranged, and an exhaust pipe 37 for exhausting the processing gas is connected to the bottom of the processing chamber 35. An exhaust pipe 37 is provided with an ejector (pneumatic vacuum device) 38 for reducing the pressure inside the processing chamber 35 of the adhesion device 30 to a negative pressure, and the ejector 38 is driven to supply compressed air for driving. An air supply pipe 39 is connected. The exhaust pipe 37 has an opening / closing valve 40, and the driving air supply pipe 39 has an opening / closing valve 41.
Are provided respectively.

An HMDS gas supply pipe 45 is connected to the upper part of the adhesion device 30.
The upper portion of the adhesion device 30 and the upper portion of a Teflon tube 51 described later in the processing liquid supply device 50 according to the embodiment are configured to be connected via the S gas supply pipe 45. Further, the HMDS gas supply pipe 45 is provided with a temperature sensor 55, a concentration sensor 56, and a switching valve 57, which will be described later, in order from the side closer to the adhesion device 30.

A gas supply source (not shown) is connected to a lower portion of the Teflon tube 51 through a gas supply pipe 58, and the gas supply source (not shown) supplies, for example, a carrier gas as a carrier gas. An inert gas such as a nitrogen gas is supplied into the Teflon tube 51. A heater 60 is provided on the outer periphery of the Teflon tube 51 so that the inside of the Teflon tube 51 can be heated.

Further, inside the Teflon tube 51, a porous membrane tube 65 made of a material having a very small hole is disposed. And this porous membrane tube 6
One end of 5 is closed inside the Teflon tube 51, and the other end is connected inside the Teflon tube 51 to a supply pipe 66 penetrating the side wall of the Teflon tube 51.
The supply pipe 66 is connected to an HMDS liquid supply source 67,
The supply pipe 66 is provided with a pump 68.

The temperature sensor 55 is configured to detect the temperature of the nitrogen gas immediately before being supplied to the processing chamber 35 after flowing through the HMDS gas supply pipe 45 and to send information on the temperature to the control device 70. . The density sensor 56 is an HMD
The configuration is such that the concentration of HMDS in the nitrogen gas flowing inside the S gas supply pipe 45 is detected, and information on the concentration is sent to the controller 70. The control device 70 is configured to control the heater 60 and the pump 68 based on the information to keep the temperature of the nitrogen gas and the concentration of HMDS in the nitrogen gas constant.

The processing liquid supply device 50 according to the present embodiment
Is configured as described above. Next, the operation and effect of the processing liquid supply device 50 will be described.

When the wafer W is mounted on the mounting table 36 of the adhesion device 30 by the main transfer device 20, the open / close valves 40 and 41 are opened and the drive air supply pipe 3 is connected to the ejector 38.
The driving pressure air is sent through 9. Then, the atmosphere inside the processing chamber 35 is suctioned and exhausted by the ejector 38 to reduce the pressure. Thereafter, nitrogen gas is introduced into the Teflon tube 51 from a gas supply source (not shown).

While the inside of the processing chamber 35 is depressurized by the ejector 38, the HMDS solution of the HMDS solution supply source 67 is supplied to the porous membrane tube 65 by operating the pump 68 in parallel. Since a number of extremely small holes are formed on the surface of the porous membrane tube 65, the HMDS liquid oozes out of the porous membrane tube 65 through these extremely small holes as shown in FIG.

Next, after closing the opening / closing valve 41 and stopping the ejector 38, the switching valve 57 is opened. Then, the HMDS liquid that has oozed out of the porous membrane tube 65 evaporates and mixes into the nitrogen gas. This nitrogen gas is supplied into the processing chamber 35 through the HMDS gas supply pipe 45.

At this time, the temperature of the nitrogen gas supplied into the processing chamber 35 is detected by a temperature sensor 55 provided in the HMDS gas supply pipe 45. The concentration of HMDS in the nitrogen gas flowing through the HMDS gas supply pipe 45 is detected by a concentration sensor 56. Then, as described above, the control device 70 controls the heater 60 and the pump 6 based on the detection information of the temperature sensor 55 and the concentration sensor 56.
8 is controlled.

That is, when the temperature of the nitrogen gas flowing through the HMDS gas supply pipe 45 becomes lower than, for example, a predetermined temperature of 23 ° C., the controller 70 sets the temperature of the nitrogen gas to the predetermined temperature. The heater 60 is controlled as described above.
Therefore, the above-mentioned nitrogen gas is supplied to the wafer W inside the processing chamber 35, for example, while the inside of the HMDS gas supply pipe 45 is controlled to an appropriate temperature at which HMDS does not dew.

When the concentration of HMDS in the nitrogen gas flowing through the HMDS gas supply pipe 45 is higher than, for example, a predetermined concentration, the control device 70 controls the HMDS in the nitrogen gas.
The pump 68 is controlled to bring the concentration of DS to a predetermined concentration. That is, by lowering the pressure at which the pump 68 supplies the HMDS solution to the porous membrane tube 65 via the supply pipe 66, the amount of the HMDS solution that seeps out of the porous membrane tube 65 is also reduced, and the HMDS evaporating into nitrogen gas is reduced. The volume decreases and the concentration decreases. Thus, the porous membrane tube 6
5 By controlling the amount of HMDS liquid that seeps outside, it is possible to adjust the concentration of HMDS in the nitrogen gas to an optimum concentration and supply it to the wafer W inside the processing chamber 35.

Further, in this processing liquid supply device 50, HMDS oozing out from the porous membrane tube 65 evaporates and mixes into nitrogen gas as a carrier gas. do not do. Therefore, H in the nitrogen gas supplied to the surface of the wafer W in the processing chamber 35
The concentration of MDS is stable. Accordingly, the wafer W inside the adhesion device 30 can be subjected to a more uniform hydrophobic treatment than before.

Thus, HMDS whose concentration and temperature are appropriately adjusted is supplied to the wafer W inside the processing chamber 35 of the adhesion apparatus 30. Therefore, it is possible to perform a suitable hydrophobic treatment on the wafer W. Thereafter, the wafer W that has been subjected to the hydrophobizing process is again held by the main transfer device 20 and transferred to the cooling processing device (COL) for the next cooling process.

In order to reuse the HMDS solution that has oozed out on the surface of the porous membrane tube 65 but has not been mixed into the nitrogen gas, the processing liquid supply device 50 may be configured as shown in FIG. 6, for example. Good. That is, an opening is provided below the Teflon tube 51, and a collection container 75 such as a drain pan for receiving the HMDS liquid that has fallen down along the surface of the porous membrane tube 65 is provided in the opening.

One end of a return pipe 76 is connected to the collection container 75, and the other end is connected to a supply pipe 66. The return pipe 76 is provided with a pump 77 between the supply pipe 66 and the collection container 75.

According to this configuration, the porous membrane tube 65
The HMDS liquid that has fallen from the container flows first through the inclination provided in the collection container 75, flows into the return pipe 76,
Is supplied to the supply pipe 66. Then, this HMD
The S liquid is supplied again to the porous membrane tube 65 by the pump 68 and oozes out of the porous membrane tube 65.

As described above, by providing the collection container 75 below the Teflon tube 51, the HMDS solution dropped from the porous membrane tube 65 can be collected, and the collected HMDS solution can be recovered using the return pipe 76 and the pump 77. By returning the liquid to the supply pipe 66 again, the HMDS liquid dropped from the porous membrane tube 65 can be reused.

Further, in the above embodiment, the HMDS solution that seeps out of the porous membrane tube 65 can also be changed by changing the thickness of the porous membrane tube 65, the number of holes provided in the porous membrane tube 65, the size of the holes, and the like. Can be controlled. As a result, HMDS in nitrogen gas
Can be controlled.

Next, another embodiment will be described.
In the above-described embodiment, the porous membrane tube 65 used as the hollow member has a configuration in which one end is closed.
In another embodiment of the present invention, a configuration is adopted in which both ends of a porous membrane tube 85 are opened like the processing liquid supply device 80 shown in FIG. The following processing liquid supply device 8
In the description of 0, components having substantially the same functions and configurations as those described above are denoted by the same reference numerals, and redundant description will be omitted.

As shown in FIG. 7, in the processing liquid supply device 80, an inlet portion 85a and an outlet portion 85b are provided at both ends of the porous membrane tube 85, respectively. And the entrance 85a
Is connected to a supply pipe 66, and an outlet 85 b is connected to a return pipe 86.
6, a circulation path 90 including a porous membrane tube 85 and a return pipe 86 is formed.

According to this configuration, the HMDS liquid supply source 6
The HMDS liquid supplied from 7 returns to the supply pipe 66 again via the supply pipe 66, the porous membrane tube 85, and the return pipe 86. While the HMDS liquid is circulating in the circulation path 90, the HMDS liquid exudes from the porous membrane tube 85.
Therefore, the deterioration of the HMDS liquid is suppressed as compared with the case where the HMDS liquid is stored in the tank as in the related art, and the HMDS liquid in a more preferable state can be gasified. Also, when replacing the HMDS liquid in the circulation path 90 for maintenance or the like, the replacement amount is smaller than in the conventional tank method.

The Teflon tube 51 need not be a straight tube. The porous membrane tube 85 as a hollow member can also be arranged in the Teflon tube 51 in accordance with the hollow membrane tube. With this configuration, the dead space of the coating and developing system 1 can be effectively used, and as a result, the entire coating and developing system 1 can be made compact. In such a case, an appropriate space maintaining member may be simultaneously arranged in the Teflon tube 51 so that the flow path of the carrier gas is secured and the surface of the hollow member does not contact the inner surface of the Teflon tube 51.

Further, the porous membrane tubes 85 can be arranged in parallel. By arranging the porous membrane tubes 85 in parallel in this manner, the surface area of the porous membrane tube 85 is increased, the amount of the HMDS solution that seeps out of the porous membrane tube 85 is increased, and the Teflon tube 51 is shortened to supply the processing solution. The arrangement space of the device 80 can be further reduced. In addition, although an example in which the wafer W is used as the substrate has been described, the present invention is not limited to this example, and can be applied to an example in which an LCD substrate is used.

[0048]

According to the first to seventh aspects of the present invention, the processing liquid supply device can be reduced in size by using a tube and a hollow member. Further, by adjusting the amount of the processing liquid that seeps out of the hollow member, the concentration of the processing liquid supplied to the substrate in the processing chamber can be controlled. The concentration is also stable. Therefore, the surface of the substrate can be uniformly processed.

According to the second and third aspects of the present invention,
Fresh processing liquid can be supplied to the substrate in the processing chamber, and the yield can be improved.

Further, according to the present invention, it is possible to supply the processing liquid adjusted to the optimum temperature to the substrate in the processing chamber.

Further, according to the fifth aspect of the invention, it is possible to reuse the processing liquid dropped from the hollow member.

Further, according to the present invention, it is possible to always supply the processing solution adjusted to an appropriate concentration to the substrate in the processing chamber.

Further, when the porous membrane tube is used for the hollow member, the processing liquid can be easily discharged to the outside of the hollow member without using a complicated mechanism or member for the hollow member. In addition, it can be uniformly exuded.

[Brief description of the drawings]

FIG. 1 is a diagram showing a plan view of a coating and developing processing system having a hydrophobizing apparatus according to an embodiment.

FIG. 2 is a front view of the coating and developing system of FIG. 1;

FIG. 3 is a view of the coating and developing processing system of FIG. 1 as viewed from the back.

FIG. 4 is an explanatory view schematically showing a configuration of a processing liquid supply device according to the embodiment;

5 is an enlarged cross-sectional view showing a state in which an HMDS liquid as a processing liquid has oozed out of a porous membrane tube of the processing liquid supply device in FIG.

FIG. 6 is an explanatory diagram of a processing liquid supply device provided with means for reusing HMDS liquid dropped from a porous membrane tube.

FIG. 7 is an explanatory diagram illustrating a processing liquid supply device according to another embodiment.

FIG. 8 is an explanatory diagram illustrating a conventional processing liquid supply device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Coating and development processing system 30 Adhesion apparatus 35 Processing chamber 50 Processing liquid supply apparatus 51 Teflon tube 55 Temperature sensor 56 Concentration sensor 60 Heater 65 Porous film tube W Wafer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (7)

(57) [Claims] In an apparatus for supplying a processing liquid to a substrate in a processing chamber, a tube leading to the processing chamber, a carrier gas supply means for supplying a carrier gas into the tube, and a gas flowing through the inside of the tube are provided. A hollow member forming a path;
A processing liquid supply means for supplying a processing liquid into the hollow member, wherein the hollow member is made of a material capable of causing the processing liquid in the flow path to seep out of the hollow member. Processing liquid supply device. 2. The processing liquid supply device according to claim 1, wherein the hollow member is formed with only an inlet portion through which a processing liquid flows into a flow path in the hollow member. 3. The hollow member is formed with an inlet portion for flowing a processing liquid into a flow path in the hollow member, and an outlet portion for flowing out of the flow path to the outside. 2. The processing liquid supply device according to claim 1, further comprising a circulation path connecting the inlet and the inlet. 4. The processing liquid supply device according to claim 1, further comprising a temperature adjusting device for adjusting a temperature of the processing liquid. 5. The apparatus according to claim 1, further comprising a recovery unit for recovering the processing liquid dropped from the hollow member, and a return unit for returning the processing liquid in the recovery unit to a processing liquid supply system. 5. The processing liquid supply device according to 2, 3, or 4. 6. A concentration sensor disposed downstream of the hollow member in the tube for detecting the concentration of the processing liquid, and a supply pressure of the processing liquid supply means based on the concentration of the processing liquid detected by the concentration sensor. 6. The processing liquid supply apparatus according to claim 1, further comprising control means for controlling the processing liquid. 7. The processing liquid supply apparatus according to claim 1, wherein the hollow member is a porous membrane tube.